Catalogo Articoli (Spogli Riviste)

HELP
ATTENZIONE: attualmente gli articoli Current Contents (fonte ISI) a partire dall'anno 2002 sono consultabili sulla Risorsa On-Line

Le informazioni sugli articoli di fonte ISI sono coperte da copyright

La ricerca find articoli where soggetti phrase all words 'wafer bonding' sort by level,fasc_key/DESCEND, pagina_ini_num/ASCEND ha restituito 180 riferimenti
Si mostrano 100 riferimenti a partire da 1
Selezionare un intervallo

Per ulteriori informazioni selezionare i riferimenti di interesse.

    1. Shen, SC; Pan, CT; Chou, HP; Chou, MC
      Batch assembly micro-ball lens array for Si-based optical coupling platform in free space

      OPTICAL REVIEW
    2. Karim, A; Piprek, J; Abraham, P; Lofgreen, D; Chiu, YJ; Bowers, JE
      1.55-mu m vertical-cavity laser arrays for wavelength-division multiplexing

      IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
    3. Ohiso, Y; Okamoto, H; Iga, R; Kishi, K; Tateno, K; Amano, C
      High performance of 1.55-mu m buried-heterostructure vertical-cavity surface-emitting lasers

      IEEE PHOTONICS TECHNOLOGY LETTERS
    4. Raburn, M; Liu, B; Okuno, Y; Bowers, JE
      InP-InGaAsP wafer-bonded vertically coupled X-crossing multiple channel optical add-drop multiplexer

      IEEE PHOTONICS TECHNOLOGY LETTERS
    5. Lin, CK; Dapkus, PD
      Uniform wafer-bonded oxide-confined bottom-emitting 850-nm VCSEL arrays onsapphire substrates

      IEEE PHOTONICS TECHNOLOGY LETTERS
    6. Black, KA; Bjorlin, ES; Piprek, J; Hu, EL; Bowers, JE
      Small-signal frequency response of long-wavelength vertical-cavity lasers

      IEEE PHOTONICS TECHNOLOGY LETTERS
    7. Wild, MJ; Gillner, A; Poprawe, R
      Locally selective bonding of silicon and glass with laser

      SENSORS AND ACTUATORS A-PHYSICAL
    8. Niklaus, F; Andersson, H; Enoksson, P; Stemme, G
      Low temperature full wafer adhesive bonding of structured wafers

      SENSORS AND ACTUATORS A-PHYSICAL
    9. Chiao, M; Lin, LW
      Hermetic wafer bonding based on rapid thermal processing

      SENSORS AND ACTUATORS A-PHYSICAL
    10. Tong, QY
      Wafer bonding for integrated materials

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    11. Pasquariello, D; Camacho, M; Hjort, K; Dozsa, L; Szentpali, B
      Evaluation of InP-to-silicon heterobonding

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    12. Horng, RH; Wuu, DS; Seieh, CH; Peng, WC; Huang, MF; Tsai, SJ; Liu, JS
      Wafer bonding of 50-mm-diameter mirror substrates to AlGaInP light-emitting diode wafers

      JOURNAL OF ELECTRONIC MATERIALS
    13. Yun, CH; Cheung, NW
      Thermal and mechanical separations of silicon layers from hydrogen pattern-implanted wafers

      JOURNAL OF ELECTRONIC MATERIALS
    14. Moran, PD; Kuech, TF
      Kinetics of strain relaxation in semiconductor films grown on borosilicateglass-bonded substrates

      JOURNAL OF ELECTRONIC MATERIALS
    15. Friedland, KJ; Riedel, A; Kostial, H; Horicke, M; Hey, R; Ploog, KH
      High mobility electron heterostructure wafer fused onto LiNbO3

      JOURNAL OF ELECTRONIC MATERIALS
    16. Aspar, B; Moriceau, H; Jalaguier, E; Lagahe, C; Soubie, A; Biasse, B; Papon, AM; Claverie, A; Grisolia, J; Benassayag, G; Letertre, F; Rayssac, O; Barge, T; Maleville, C; Ghyselen, B
      The generic nature of the Smart-Cut((R)) process for thin film transfer

      JOURNAL OF ELECTRONIC MATERIALS
    17. Colinge, C; Roberds, B; Doyle, B
      Silicon layer transfer using wafer bonding and debonding

      JOURNAL OF ELECTRONIC MATERIALS
    18. Chen, KN; Fan, A; Reif, R
      Microstructure examination of copper wafer bonding

      JOURNAL OF ELECTRONIC MATERIALS
    19. Quitoriano, N; Wong, WS; Tsakalakos, L; Cho, Y; Sands, T
      Kinetics of the Pd/In thin-film bilaver reaction: Implications for transient-liquid-phase wafer bonding

      JOURNAL OF ELECTRONIC MATERIALS
    20. Dessein, K; Kumar, PSA; Lagae, L; De Boeck, J; Delaey, L; Borghs, G
      Improvement of the transfer coefficient of GaAs/Si spin-valve transistors

      JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS
    21. Tsoukalas, D; Skarlatos, D; Stoemenos, J
      Investigation of the influence of a dislocation loop layer on interstitialkinetics during surface oxidation of silicon

      NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
    22. Lagnado, I; de la Houssaye, PR
      Integration of Si and SiGe with Al2O3 (sapphire)

      MICROELECTRONIC ENGINEERING
    23. Johansson, M; Berg, J; Bengtsson, S
      High frequency properties of silicon-on-insulator and novel depleted silicon materials

      SOLID-STATE ELECTRONICS
    24. Dessein, K; Kumar, PSA; Nemeth, S; Delaey, L; Borghs, G; De Boeck, J
      The vacuum wafer bonding technique as an alternative method for the fabrication of metal/semiconductor heterostructures

      JOURNAL OF CRYSTAL GROWTH
    25. Herrick, KJ; Katehi, LPB
      RF W-band wafer-to-wafer transition

      IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES
    26. Davis, JA; Venkatesan, R; Kaloyeros, A; Beylansky, M; Souri, SJ; Banerjee, K; Saraswat, KC; Rahman, A; Reif, R; Meindl, JD
      Interconnect limits on gigascale integration (GSI) in the 21st century

      PROCEEDINGS OF THE IEEE
    27. Ohiso, Y; Okamoto, H; Iga, R; Kishi, K; Tateno, K; Amano, C
      1.55-mu m buried-heterostructure VCSELs with InGaAsP/InP-GaAs/AlAs DBRs ona GaAs substrate

      IEEE JOURNAL OF QUANTUM ELECTRONICS
    28. Bjorlin, ES; Riou, B; Abraham, P; Piprek, J; Chiu, YJ; Black, KA; Keating, A; Bowers, JE
      Long wavelength vertical-cavity semiconductor optical amplifiers

      IEEE JOURNAL OF QUANTUM ELECTRONICS
    29. Pasquariello, D; Camacho, M; Ericsson, F; Hjort, K
      Crystalline defects in InP-to-silicon direct wafer bonding

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    30. Onishi, Y; Koyama, F; Iga, K
      Design and fabrication process of optically pumped GaInAsP/InP stripe laser with resonant pumping for high-power operation

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    31. Yokoi, H; Waniishi, T; Mizumoto, T; Shimizu, M; Sakurai, K; Futakuchi, N; Nakano, Y
      Integration of terraced laser diode and garnet crystals by wafer direct bonding

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    32. Horng, RL; Lien, YC; Peng, WC; Wuu, DS; Tseng, CY; Seieh, CH; Huang, MF; Tsai, SJ; Liu, JSR
      High-brightness wafer-bonded indium-tin oxide/light-emitting diode/mirror/Si

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    33. Scheerschmidt, K; Conrad, D; Belov, A; Timpel, D
      Enhanced semi-empirical potentials in molecular dynamics simulations of wafer bonding

      MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
    34. Karim, A; Bjorlin, S; Piprek, J; Bowers, JE
      Long-wavelength vertical-cavity lasers and amplifiers

      IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
    35. Yun, CH; Cheung, NW
      Fabrication of silicon and oxide membranes over cavities using ion-cut layer transfer

      JOURNAL OF MICROELECTROMECHANICAL SYSTEMS
    36. Voldman, J; Gray, ML; Schmidt, MA
      An integrated liquid mixer/valve

      JOURNAL OF MICROELECTROMECHANICAL SYSTEMS
    37. Cheng, YT; Lin, LW; Najafi, K
      Localized silicon fusion and eutectic bonding for MEMS fabrication and packaging

      JOURNAL OF MICROELECTROMECHANICAL SYSTEMS
    38. Partridge, A; Reynolds, JK; Chui, BW; Chow, EM; Fitzgerald, AM; Zhang, L; Maluf, NI; Kenney, TW
      A high-performance planar piezoresistive accelerometer

      JOURNAL OF MICROELECTROMECHANICAL SYSTEMS
    39. Bjorlin, ES; Riou, B; Keating, A; Abraham, P; Chiu, YJ; Piprek, J; Bowers, JE
      1.3-mu m vertical-cavity amplifier

      IEEE PHOTONICS TECHNOLOGY LETTERS
    40. Liu, B; Shakouri, A; Abraham, P; Bowers, JE
      Optical add/drop multiplexers based on X-crossing vertical coupler filters

      IEEE PHOTONICS TECHNOLOGY LETTERS
    41. Xiong, Y; Zhou, Y; Zhu, ZH; Lo, YH; Ji, C; Bashar, SA; Allerman, AA; Hargett, T; Sieg, R; Choquette, KD
      Oxide-defined GaAs vertical-cavity surface-emitting lasers on Si substrates

      IEEE PHOTONICS TECHNOLOGY LETTERS
    42. Raburn, M; Liu, B; Abraham, P; Bowers, JE
      Double-bonded InP-InGaAsP vertical coupler 1 : 8 beam splitter

      IEEE PHOTONICS TECHNOLOGY LETTERS
    43. Geske, J; Jayaraman, V; Goodwin, T; Culick, M; MacDougal, M; Goodnough, T; Welch, D; Bowers, JE
      2.5-Gb/s Transmission over 50 km with a 1.3-mu m vertical-cavity surface-emitting laser

      IEEE PHOTONICS TECHNOLOGY LETTERS
    44. Karim, A; Black, KA; Abraham, P; Lofgreen, D; Chiu, YJ; Piprek, J; Bowers, JE
      Superlattice barrier 1528-nm vertical-cavity laser with 85 degrees C continuous-wave operation

      IEEE PHOTONICS TECHNOLOGY LETTERS
    45. Ma, Y; Chang, G; Park, S; Wang, LW; Ho, ST
      InGaAsP thin-film microdisk resonators fabricated by polymer wafer bondingfor wavelength add-drop filters

      IEEE PHOTONICS TECHNOLOGY LETTERS
    46. Vanhollebeke, K; Moerman, I; Van Daele, P; Demeester, P
      Compliant substrate technology: Integration of mismatched materials for opto-electronic applications

      PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS
    47. Wiegand, M; Reiche, M; Gosele, U; Gutjahr, K; Stolze, D; Longwitz, R
      Wafer bonding of silicon wafers covered with various surface layers

      SENSORS AND ACTUATORS A-PHYSICAL
    48. Pandraud, G; Koster, TM; Gui, C; Dijkstra, M; van den Berg, A; Lambeck, PV
      Evanescent wave sensing: new features for detection in small volumes

      SENSORS AND ACTUATORS A-PHYSICAL
    49. Lee, C; Huang, WF; Shie, JS
      Wafer bonding by low-temperature soldering

      SENSORS AND ACTUATORS A-PHYSICAL
    50. Li, ZH; Yang, ZC; Xiao, ZX; Hao, YL; Li, T; Wu, GY; Wang, YY
      A bulk micromachined vibratory lateral gyroscope fabricated with wafer bonding and deep trench etching

      SENSORS AND ACTUATORS A-PHYSICAL
    51. Mukerjee, EV; Wallace, AP; Yan, KY; Howard, DW; Smith, RL; Collins, SD
      Vaporizing liquid microthruster

      SENSORS AND ACTUATORS A-PHYSICAL
    52. Pasquariello, D; Lindeberg, M; Hedlund, C; Hjort, K
      Surface energy as a function of self-bias voltage in oxygen plasma wafer bonding

      SENSORS AND ACTUATORS A-PHYSICAL
    53. Buttard, D; Eymery, J; Rieutord, F; Fournel, F; Lubbert, D; Baumbach, T; Moriceau, H
      Grazing incidence X-ray studies of twist-bonded Si/Si and Si/SiO2 interfaces

      PHYSICA B
    54. Royter, Y; Furuta, T; Kodama, S; Sahri, N; Nagatsuma, T; Ishibashi, T
      Integrated packaging of over 100 GHz bandwidth uni-traveling-carrier photodiodes

      IEEE ELECTRON DEVICE LETTERS
    55. Pelissier, S; Pandraud, G; Mure-Ravaud, A; Tishchenko, AV; Biasse, B
      Fabrication of buried corrugated waveguides by wafer direct bonding

      JOURNAL OF LIGHTWAVE TECHNOLOGY
    56. Bengtsson, S; Amirfeiz, P
      Room temperature wafer bonding of silicon, oxidized silicon, and crystalline quartz

      JOURNAL OF ELECTRONIC MATERIALS
    57. Zheng, Y; Moran, PD; Guan, ZF; Lau, SS; Hansen, DM; Kuech, TF; Haynes, TE; Hoechbauer, T; Nastasi, M
      Transfer of n-type GaSb onto GaAs substrate by hydrogen implantation and wafer bonding

      JOURNAL OF ELECTRONIC MATERIALS
    58. Tong, QY; Huang, LJ; Gosele, UM
      Transfer of semiconductor and oxide films by wafer bonding and layer cutting

      JOURNAL OF ELECTRONIC MATERIALS
    59. Tan, IH; Vanderwater, DA; Huang, JW; Hofler, GE; Kish, FA; Chen, EI; Ostentowski, TD
      Wafer bonding of 75 mm diameter GaP to AlGaInP-GaP light-emitting diode wafers

      JOURNAL OF ELECTRONIC MATERIALS
    60. Hansen, DM; Charters, D; Au, YL; Mak, WK; Tejasukmana, W; Moran, PD; Kuech, TF
      Mechanistic study of borosilicate glass growth by low-pressure chemical vapor deposition from tetraethylorthosilicate and trimethylborate

      JOURNAL OF ELECTRONIC MATERIALS
    61. Reiche, M; Gosele, U; Wiegand, M
      Modification of Si(100)-surfaces by SF6 plasma etching - Application to wafer direct bonding

      CRYSTAL RESEARCH AND TECHNOLOGY
    62. Nuryadi, R; Ishikawa, Y; Tabe, M
      Formation and ordering of self-assembled Si islands by ultrahigh vacuum annealing of ultrathin bonded silicon-on-insulator structure

      APPLIED SURFACE SCIENCE
    63. Piotrowski, T; Jung, W
      Characterization of silicon wafer bonding by observation in transmitted infrared radiation from an extended source

      THIN SOLID FILMS
    64. Plossl, A; Krauter, G
      Silicon-on-insulator: materials aspects and applications

      SOLID-STATE ELECTRONICS
    65. Vainer, BG; Kamaev, GN; Kurishev, GL
      Application of the narrow spectral range InAs-FPA-based IR camera for the investigation of the interface voids in silicon wafer bonding

      JOURNAL OF CRYSTAL GROWTH
    66. Marazita, SM; Bishop, WL; Hesler, JL; Hui, K; Bowen, WE; Crowe, TW
      Integrated GaAs Schottky mixers by spin-on-dielectric wafer bonding

      IEEE TRANSACTIONS ON ELECTRON DEVICES
    67. Zheng, YS; Asano, T
      New SOI complementary-bipolar complementary-MOS (CBiCMOS) with merged device structure

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    68. Horng, RH; Wuu, DS; Wei, SC; Tseng, CT; Huang, MF; Chang, KH; Liu, PH; Lin, KC
      Wafer-bonded AlGaInP/Au/AuBe/SiO2/Si light-emitting diodes

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    69. Kodama, S; Furuta, T; Watanabe, N; Ito, H; Kanda, A; Muraguchi, M; Ishibashi, T
      Variable threshold AlGaAs/InGaAs heterostructure field-effect transistors with paired gates fabricated using the wafer-bonding technique

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    70. Herfort, J; Apostolopoulos, G; Friedland, KJ; Kostial, H; Ulrici, W; Daweritz, L; Leitner, M; Glas, P; Ploog, KH
      In situ controlled growth of low-temperature GaAs and its application for mode-locking devices

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    71. Lee, KW; Nakamura, T; Sakuma, K; Park, KT; Shimazutsu, H; Miyakawa, N; Kim, KY; Kurino, H; Koyanagi, M
      Development of three-dimensional integration technology for highly parallel image-processing chip

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    72. Saitoh, T; Sogawa, T; Notomi, M; Tamamura, T; Kodama, S; Furuta, T; Ando, H
      GaAs photonic crystals on SiO2 fabricated by very-high-frequency anode-coupled reactive ion etching and wafer bonding

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    73. Bruel, M
      Separation of silicon wafers by the smart-cut method

      MATERIALS RESEARCH INNOVATIONS
    74. Imada, M; Noda, S; Chutinan, A; Murata, M; Sasaki, G
      Semiconductor lasers with one- and two-dimensional air/semiconductor gratings embedded by wafer fusion technique

      IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
    75. Shimomura, K; Yamagata, T
      Novel integrated photodetector on Si LSI circuits - Optically controlled MOSFET

      IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
    76. Veldhuis, GJ; Nauta, T; Gui, C; Berenschot, JW; Lambeck, PV
      Electrostatically actuated mechanooptical waveguide ON-OFF switch showing high extinction at a low actuation-voltage

      IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
    77. Alexe, M; Senz, S; Pignolet, A; Hesse, D; Gosele, U
      Direct wafer bonding and layer transfer for ferroelectric thin film integration

      INTEGRATED FERROELECTRICS
    78. Ishihara, K; Yung, CF; Ayon, AA; Schmidt, MA
      An inertial sensor technology using DRIE and wafer bonding with interconnecting capability

      JOURNAL OF MICROELECTROMECHANICAL SYSTEMS
    79. Lin, CK; Ryu, SW; Choi, WJ; Dapkus, PD
      Wafer-bonded bottom-emitting 850-nm VCSEL's on GaP substrates

      IEEE PHOTONICS TECHNOLOGY LETTERS
    80. London, JM; Loomis, AH; Ahadian, JF; Fonstad, CG
      Preparation of silicon-on-gallium arsenide wafers for monolithic optoelectronic integration

      IEEE PHOTONICS TECHNOLOGY LETTERS
    81. Lin, CK; Ryu, SW; Dapkus, PD
      High-performance wafer-bonded bottom-emitting 850-nm VCSEL's on undoped GaP and sapphire substrates

      IEEE PHOTONICS TECHNOLOGY LETTERS
    82. Liu, B; Shakouri, A; Abraham, P; Chiu, YJ; Zhang, S; Bowers, JE
      Fused InP-GaAs vertical coupler filters

      IEEE PHOTONICS TECHNOLOGY LETTERS
    83. Plossl, A; Krauter, G
      Wafer direct bonding: tailoring adhesion between brittle materials

      MATERIALS SCIENCE & ENGINEERING R-REPORTS
    84. Goustouridis, D; Tsoukalas, D; Normand, P; Kontos, AG; Raptis, Y; Anastassakis, E
      Parameters influencing the flatness and stability of capacitive pressure sensors fabricated with wafer bonding

      SENSORS AND ACTUATORS A-PHYSICAL
    85. Martini, T; Hopfe, S; Mack, S; Gosele, U
      Wafer bonding across surface steps in the nanometer range

      SENSORS AND ACTUATORS A-PHYSICAL
    86. Gosele, U; Tong, QY; Schumacher, A; Krauter, G; Reiche, M; Plossl, A; Kopperschmidt, P; Lee, TH; Kim, WJ
      Wafer bonding for microsystems technologies

      SENSORS AND ACTUATORS A-PHYSICAL
    87. Serre, C; Romano-Rodriguez, A; Perez-Rodriguez, A; Morante, JR; Fonseca, L; Acero, MC; Kogler, R; Skorupa, W
      beta-SiC on SiO2 formed by ion implantation and bonding for micromechanicsapplications

      SENSORS AND ACTUATORS A-PHYSICAL
    88. Msall, ME; Klimashov, A; Dietsche, W; Friedland, K
      Direct phonon transmission across wafer-bonded crystals

      PHYSICA B
    89. Wong, WS; Wengrow, AB; Cho, Y; Salleo, A; Quitoriano, NJ; Cheung, NW; Sands, T
      Integration of GaN thin films with dissimilar substrate materials by Pd-Inmetal bonding and laser lift-off

      JOURNAL OF ELECTRONIC MATERIALS
    90. Khanh, NQ; Kovacsics, C; Mohacsy, T; Adam, M; Gyulai, J
      Measuring the generation lifetime profile modified by MeV H+ ion implantation in silicon

      NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
    91. Imada, M; Noda, S; Kobayashi, H; Sasaki, G
      Characterization of a distributed feedback laser with air/semiconductor gratings embedded by the wafer fusion technique

      IEEE JOURNAL OF QUANTUM ELECTRONICS
    92. Alexe, M; Senz, S; Pignolet, A; Hesse, D; Gosele, U
      Direct wafer bonding and layer transfer - a new approach to integration offerroelectric oxides into silicon technology

      FERROELECTRICS
    93. Alexe, M; Senz, ST; Pignolet, A; Hesse, D; Gosele, U
      Structural and electrical properties of metal-ferroelectric-silicon heterostructure fabricated by a direct wafer bonding and layer transfer process

      FERROELECTRICS
    94. Yokoi, H; Mizumoto, T; Shimizu, M; Waniishi, T; Futakuchi, N; Kaida, N; Nakano, Y
      Analysis of GaInAsP surfaces by contact-angle measurement for wafer directbonding with garnet crystals

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    95. Nitta, Y; Yamagata, T; Shimomura, K
      Gate-length dependence of optical characteristics in optically controlled MOSFET

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    96. Takagi, H; Maeda, R; Hosoda, N; Suga, T
      Transmission electron microscope observations of Si/Si interface bonded atroom temperature by Ar beam surface activation

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    97. Yokoi, H; Mizumoto, T; Shimizu, M; Futakuchi, N; Kaida, N; Nakano, Y
      Direct bonding between quaternary compound semiconductor and garnet crystals for integrated optical isolator

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    98. Sarrabayrouse, G; Lecerf, P; Bielle-Daspet, D
      Recombination activity in directly bonded high resistivity silicon wafers measured by the photoconductance decay method

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    99. Ishikawa, Y; Makita, S; Zhang, JH; Tsuchiya, T; Tabe, M
      Capacitance-voltage study of silicon-on-insulator structure with an ultrathin buried SiO2 layer fabricated by wafer bonding

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    100. SHEU JK; SU YK; CHANG SJ; JOU MJ; LIU CC; CHI GC
      INVESTIGATION OF WAFER-BONDED (ALXGA1-X)(0.5)IN0.5P GAP LIGHT-EMITTING-DIODES/

      IEE proceedings. Optoelectronics


ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 27/10/20 alle ore 01:15:10