Catalogo Articoli (Spogli Riviste)

HELP
ATTENZIONE: attualmente gli articoli Current Contents (fonte ISI) a partire dall'anno 2002 sono consultabili sulla Risorsa On-Line

Le informazioni sugli articoli di fonte ISI sono coperte da copyright

La ricerca find articoli where soggetti phrase all words 'thermal chemical vapor deposition' sort by level,fasc_key/DESCEND, pagina_ini_num/ASCEND ha restituito 13 riferimenti
Selezionare un intervallo

Per ulteriori informazioni selezionare i riferimenti di interesse.

    1. Li, YJ; Lau, SP; Tay, BK; Chen, GY; Sun, Z; Chen, JS; You, GF; Sheeja, D
      Oriented carbon microfibers grown by catalytic decomposition of acetylene and their field emission properties

      DIAMOND AND RELATED MATERIALS
    2. Choi, YC; Kim, DW; Lee, TJ; Lee, CJ; Lee, YH
      Growth mechanism of vertically aligned carbon nanotubes on silicon substrates

      SYNTHETIC METALS
    3. Okada, M; Kamioka, H; Matsuo, H; Fukuda, Y; Zaima, S; Kawamura, K; Yasuda, Y
      Epitaxial growth of heavily B-doped SiGe films and interfacial reaction ofTi/B-doped SiGe bilayer structure using rapid thermal processing

      THIN SOLID FILMS
    4. Kim, SJ; Seo, YH; Nahm, KS; Hahn, YB; Shim, HW; Suh, EY; Lim, KY; Lee, HJ
      Effect of gas feeding methods on optical properties of GaN grown by rapid thermal chemical vapor deposition reactor

      JOURNAL OF ELECTRONIC MATERIALS
    5. YAMAGUCHI N; HATTORI T; TERASHIMA K; YOSHIDA T
      HIGH-RATE DEPOSITION OF LINBO3 FILMS BY THERMAL PLASMA SPRAY CVD

      Thin solid films
    6. LEUTENECKER R; FROSCHLE B; RAMM P
      TITANIUM MONOPHOSPHIDE (TIP) LAYERS AS POTENTIAL DIFFUSION-BARRIERS

      Microelectronic engineering
    7. SEMMACHE B; LEMITI M; CHANELIERE C; DUBOIS C; SIBAI A; CANUT B; LAUGIER A
      SILICON-NITRIDE AND OXYNITRIDE DEPOSITION BY RT-LPCVD

      Thin solid films
    8. RAY SK; MCNEILL DW; GAY DL; MAITI CK; ARMSTRONG GA; ARMSTRONG BM; GAMBLE HS
      COMPARISON OF SI1-YCY FILMS PRODUCED BY SOLID-PHASE EPITAXY AND RAPIDTHERMAL CHEMICAL-VAPOR-DEPOSITION

      Thin solid films
    9. BANISCH R; TILLACK B; PRESSEL K; BARTH R; ERZGRABER H
      INFRARED-SENSITIVE SIGE-SI HETEROJUNCTION INTERNAL PHOTOEMISSION DETECTORS PRODUCED BY RAPID THERMAL CHEMICAL-VAPOR-DEPOSITION

      Thin solid films
    10. MISRA V; XU XL; HORNUNG BE; KUEHN RT; MILES DS; HAUSER JR; WORTMAN JJ
      HIGH-QUALITY GATE DIELECTRICS FORMED BY RAPID THERMAL CHEMICAL-VAPOR-DEPOSITION OF SILANE AND NITROUS-OXIDE

      Journal of electronic materials
    11. GRIDER DT; OZTURK MC; ASHBURN SP; WORTMAN JJ
      ULTRA-SHALLOW RAISED P-N JUNCTIONS FORMED BY DIFFUSION FROM SELECTIVELY DEPOSITED IN-SITU DOPED SI0.7GE0.3()

      Journal of electronic materials
    12. HWANG JD; FANG YK; SONG YJ; YAUNG DN
      EPITAXIAL-GROWTH AND ELECTRICAL CHARACTERISTICS OF BETA-SIC ON SI BY LOW-PRESSURE RAPID THERMAL CHEMICAL-VAPOR-DEPOSITION

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    13. LUCOVSKY G; MA Y; HATTANGADY SV; LEE DR; LU Z; MISRA V; WORTMAN JJ; JING Z; WHITTEN JL
      INTEGRATION OF PLASMA-ASSISTED AND RAPID THERMAL-PROCESSING FOR LOW-THERMAL BUDGET PREPARATION OF ULTRA-THIN DIELECTRICS FOR STACKED-GATE DEVICE STRUCTURES

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS


ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 20/01/21 alle ore 01:52:54