Catalogo Articoli (Spogli Riviste)

HELP
ATTENZIONE: attualmente gli articoli Current Contents (fonte ISI) a partire dall'anno 2002 sono consultabili sulla Risorsa On-Line

Le informazioni sugli articoli di fonte ISI sono coperte da copyright

La ricerca find articoli where soggetti phrase all words 'semiconducting materials' sort by level,fasc_key/DESCEND, pagina_ini_num/ASCEND ha restituito 243 riferimenti
Si mostrano 100 riferimenti a partire da 1
Selezionare un intervallo

Per ulteriori informazioni selezionare i riferimenti di interesse.

    1. Voloshin, AE; Nishinaga, T; Ge, P; Huo, C
      Te distribution in space grown GaSb

      JOURNAL OF CRYSTAL GROWTH
    2. Gao, YZ; Kan, H; Gao, FS; Gong, XY; Yamaguchi, T
      Improved purity of long-wavelength InAsSb epilayers grown by melt epitaxy in fused silica boats

      JOURNAL OF CRYSTAL GROWTH
    3. Lu, LW; Fong, WK; Zhu, CF; Leung, BH; Surya, C; Wang, J; Ge, WK
      Study of GaN thin films grown on intermediate-temperature buffer layers bymolecular beam epitaxy

      JOURNAL OF CRYSTAL GROWTH
    4. Kim, JS; Yu, PW; Leem, JY; Lee, JI; Noh, SK; Kim, JS; Kim, GH; Kang, SK; Ban, SI; Kim, SG; Jang, YD; Lee, UH; Yim, JS; Lee, D
      Growth of Si-doped InAs quantum dots and annealing effects on size distribution

      JOURNAL OF CRYSTAL GROWTH
    5. Kim, GH; Choi, JB; Leem, JY; Lee, JI; Noh, SK; Kim, JS; Kim, JS; Kang, SK; Ban, SI
      Optical properties of InAs epilayers grown on GaAs by molecular beam epitaxy

      JOURNAL OF CRYSTAL GROWTH
    6. Wang, YW; Zhang, LD; Wang, GZ; Peng, XS; Chu, ZQ; Liang, CH
      Catalytic growth of semiconducting zinc oxide nanowires and their photoluminescence properties

      JOURNAL OF CRYSTAL GROWTH
    7. Xu, S; Wang, H; Zhu, JJ; Chen, HY
      Sonochemical synthesis of copper selenides nanocrystals with different phases

      JOURNAL OF CRYSTAL GROWTH
    8. Ongaro, R; Mohammed, G; Alain, P
      On the stability of transient photoconductivity on approaching equilibrium

      RADIATION EFFECTS AND DEFECTS IN SOLIDS
    9. Wu, J; Iordache, G; Summers, HD; Roberts, JS
      Optical characteristics of VCSEL pumped microchip lasers

      OPTICS COMMUNICATIONS
    10. Xu, HZ; Akahane, K; Song, HZ; Okada, Y; Kawabe, M
      Two-dimensional ordering arrays of InAsxP1-x islands formed by As/P exchange reaction on InP (311)B surface

      JOURNAL OF CRYSTAL GROWTH
    11. Lee, HS; Lee, JY; Kim, TW; Park, HL
      Long-range order in CdxZn1-xTe epilayers grown on GaAs substrates

      JOURNAL OF CRYSTAL GROWTH
    12. Yang, Y; Shen, DZ; Zhang, JY; Fan, XW; Li, BS; Lu, YM; Liu, YC; Liu, YN
      The formation mechanism of self-assembled CdSe quantum dots

      JOURNAL OF CRYSTAL GROWTH
    13. Shan, CX; Fan, XW; Zhang, JY; Zhang, ZZ; Ma, JG; Lu, YM; Liu, YC; Shen, DZ
      Growth and characterization of ZnCdTe-ZnTe quantum wells on ZnO coated Si substrate by metalorganic chemical vapor deposition

      JOURNAL OF CRYSTAL GROWTH
    14. Wang, H; Zhang, HR; Zhu, JJ
      A microwave assisted heating method for the rapid synthesis of sphalrite-type mercury sulfide nanocrystals with different sizes

      JOURNAL OF CRYSTAL GROWTH
    15. Fong, WK; Zhu, CF; Leung, BH; Surya, C
      High-mobility GaN epilayer grown by RF plasma-assisted molecular beam epitaxy on intermediate-temperature GaN buffer layer

      JOURNAL OF CRYSTAL GROWTH
    16. Song, KM; Kim, DJ; Moon, YT; Park, SJ
      Characteristics of GaN grown by metalorganic chemical vapor deposition using trimethylgallium and triethylgallium

      JOURNAL OF CRYSTAL GROWTH
    17. Yeckel, A; Derby, JJ
      Buoyancy and rotation in small-scale vertical Bridgman growth of cadmium zinc telluride using accelerated crucible rotation

      JOURNAL OF CRYSTAL GROWTH
    18. Chalker, PR; Davock, H; Thomas, S; Joyce, TB; Bullough, TJ; Potter, RJ; Balkan, N
      Compositional variation in as-grown GaInNAs/GaAs quantum well structures

      JOURNAL OF CRYSTAL GROWTH
    19. Nadenau, V; Lippold, G; Rau, U; Schock, HW
      Sodium induced secondary phase segregations in CuGaSe2 thin films

      JOURNAL OF CRYSTAL GROWTH
    20. Yodo, T; Ando, H; Nosei, D; Seko, J; Sakai, K; Shimeno, M; Harada, Y
      Mutual influence among inert nitrogen molecules, nitrogen radical atoms, nitrogen radical molecules and nitrogen molecular ions on growth process andcrystal structure of GaN heteroepitaxial layers grown on Si(001) and Si(111) substrates by molecular-beam epitaxy assisted by electron cyclotron resonance

      JOURNAL OF CRYSTAL GROWTH
    21. Pal, D; Pan, D; Towe, E; Chen, SJ
      Characterization of (In,Ga,Al)As/GaAs quantum-dot superlattice structures by high-resolution X-ray diffraction

      JOURNAL OF CRYSTAL GROWTH
    22. Wu, X; Weatherly, GC
      Composition modulations in tensile strained In1-xGaxAsyP1-y films grown on(100) InP substrates

      JOURNAL OF CRYSTAL GROWTH
    23. Vanhollebeke, K; D'Hondt, M; Moerman, I; Van Daele, P; Demeester, P
      MOVPE based Zn diffusion into InP and InAsP/InP hetero structures

      JOURNAL OF CRYSTAL GROWTH
    24. Elias, P; Cambel, V; Hasenohrl, S; Kostic, I
      OMCVD growth of InP and InGaAs on InP non-planar substrates patterned with{110} quasi facets

      JOURNAL OF CRYSTAL GROWTH
    25. Yoon, SF; Yip, KH; Zheng, HQ
      Deep level effects on the characteristics of Al0.25Ga0.75As/In0.20Ga0.80As/GaAs high electron mobility transistors grown by solid source MBE

      JOURNAL OF CRYSTAL GROWTH
    26. Seo, DS; Lee, JK; Kim, H
      Synthesis of TiO(2)nanocrystalline powder by aging at low temperature

      JOURNAL OF CRYSTAL GROWTH
    27. Asomoza, R; Elyukhin, VA; Martinez-Juarez, J; Pena-Sierra, R
      Crystallization of the A(x)(III)B(1-x)(III)C(V) alloys from the supercooled liquid solutions

      JOURNAL OF CRYSTAL GROWTH
    28. Cao, X; Zeng, YP; Kong, MY; Pan, LA; Wang, BQ; Zhu, ZP; Wang, XG; Chang, Y; Chu, JH
      Photoluminescence of AlGaAs/InGaAs/GaAs pseudomorphic HEMTs with differentthickness of spacer layer

      JOURNAL OF CRYSTAL GROWTH
    29. He, MQ; Zhou, PZ; Mohammad, SN; Harris, GL; Halpern, JB; Jacobs, R; Sarney, WL; Salamanca-Riba, L
      Growth of GaN nanowires by direct reaction of Ga with NH3

      JOURNAL OF CRYSTAL GROWTH
    30. Sandvik, P; Mi, K; Shahedipour, F; McClintock, R; Yasan, A; Kung, P; Razeghi, M
      AlxGa1-xN for solar-blind UV detectors

      JOURNAL OF CRYSTAL GROWTH
    31. Persson, C; da Silva, AF; Ahuja, R; Johansson, B
      Effective electronic masses in wurtzite and zinc-blende GaN and AlN

      JOURNAL OF CRYSTAL GROWTH
    32. Persson, C; Ahuja, R; da Silva, AF; Johansson, B
      First-principle calculations of optical properties of wurtzite AlN and GaN

      JOURNAL OF CRYSTAL GROWTH
    33. Maclean, JO; Wallis, DJ; Martin, T; Houlton, MR; Simons, AJ
      Nitrogen incorporation into GaAs(N), Al0.3Ga0.7As(N) and In0.15Ga0.85As(N)by chemical beam epitaxy (CBE) using 1,1-dimethylhydrazine

      JOURNAL OF CRYSTAL GROWTH
    34. Kumagai, Y; Takemoto, K; Hasegawa, T; Koukitu, A; Seki, H
      Thermodynamics on tri-halide vapor-phase epitaxy of GaN and InxGa1-xN using GaCl3 and InCl3

      JOURNAL OF CRYSTAL GROWTH
    35. Parala, H; Devi, A; Hipler, F; Maile, E; Birkner, A; Becker, HW; Fischer, RA
      Investigations on InN whiskers grown by chemical vapour deposition

      JOURNAL OF CRYSTAL GROWTH
    36. Bourret-Courchesne, ED; Ye, Q; Yu, KM; Ager, JW
      Evolution of crystallinity of GaN layers grown at low temperature on sapphire with dimethylhydrazine and triethylgallium

      JOURNAL OF CRYSTAL GROWTH
    37. Schieber, M; James, RB; Hermon, H; Vilensky, A; Baydjanov, I; Goorsky, M; Lam, T; Meerson, E; Yao, HW; Erickson, J; Cross, E; Burger, A; Ndap, JO; Wright, G; Fiederle, M
      Comparison of cadmium zinc telluride crystals grown by horizontal and vertical Bridgman and from the vapor phase

      JOURNAL OF CRYSTAL GROWTH
    38. Jiang, Y; Wu, Y; Xie, B; Yuan, SW; Liu, XM; Qian, YT
      Hydrothermal preparation of uniform cubic-shaped PbS nanocrystals

      JOURNAL OF CRYSTAL GROWTH
    39. Balmer, RS; Pickering, C; Kier, AM; Birbeck, JCH; Saker, M; Martin, T
      In situ optical monitoring of AlGaN thickness and composition during MOVPEgrowth of AlGaN/GaN microwave HFETs

      JOURNAL OF CRYSTAL GROWTH
    40. Suski, T; Litwin-Staszewska, E; Perlin, P; Wisniewski, P; Teisseyre, H; Grzegory, I; Bockowski, M; Porowski, S; Saarinen, K; Nissila, J
      Optical and electrical properties of Be doped GaN bulk crystals

      JOURNAL OF CRYSTAL GROWTH
    41. Kusakabe, K; Kishino, K; Kikuchi, A; Yamada, T; Sugihara, D; Nakamura, S
      Reduction of threading dislocations in migration enhanced epitaxy grown GaN with N-polarity by use of AlN multiple interlayer

      JOURNAL OF CRYSTAL GROWTH
    42. Fewster, PF; Andrew, NL; Foxon, CT
      Microstructure and composition analysis of group III nitrides by X-ray scattering

      JOURNAL OF CRYSTAL GROWTH
    43. Katsikini, M; Paloura, EC; Antonopoulos, J; Bressler, P; Moustakas, TD
      Study of group-III binary and ternary nitrides using X-ray absorption finestructure measurements

      JOURNAL OF CRYSTAL GROWTH
    44. Cherns, D; Mokhtari, H; Jiao, CG; Averbeck, R; Riechert, H
      Profiling band structure in GaN devices by electron holography

      JOURNAL OF CRYSTAL GROWTH
    45. Sharma, N; Tricker, D; Thomas, P; Bougrioua, Z; Jacobs, K; Cheyns, J; Moerman, I; Thrush, T; Considine, L; Boyd, A; Humphreys, C
      Chemical mapping of InGaN MQWs

      JOURNAL OF CRYSTAL GROWTH
    46. Pereira, S; Correia, MR; Monteiro, T; Pereira, E; Soares, MR; Alves, E
      Indium content determination related with structural and optical properties of InGaN layers

      JOURNAL OF CRYSTAL GROWTH
    47. Bulutay, C; Ridley, BK; Zakhleniuk, NA
      Polar optical phonon scattering and negative Kromer-Esaki-Tsu differentialconductivity in bulk GaN

      JOURNAL OF CRYSTAL GROWTH
    48. Xia, R; Xu, H; Harrison, I; Beaument, B; Andrianov, A; Dods, SRA; Morgan, JM; Larkins, EC
      Spectrally resolved electroluminescence microscopy and mu-electroluminescence investigation of GaN-based LEDs

      JOURNAL OF CRYSTAL GROWTH
    49. Pozina, G; Bergman, JP; Monemar, B; Iwaya, M; Nitta, S; Amano, H; Akasaki, I
      Photoluminescence of InGaN/GaN multiple quantum wells grown by mass transport

      JOURNAL OF CRYSTAL GROWTH
    50. Henley, SJ; Bewick, A; Cherns, D; Ponce, FA
      Luminescence studies of defects and piezoelectric fields in InGaN/GaN single quantum wells

      JOURNAL OF CRYSTAL GROWTH
    51. Hangleiter, A; Heppel, S; Off, J; Kuhn, B; Scholz, F; Bader, S; Hahn, B; Harle, V
      Analysis of the threshold current in nitride-based lasers

      JOURNAL OF CRYSTAL GROWTH
    52. Winser, AJ; Harrison, I; Novikov, SV; Davis, CS; Campion, R; Cheng, TS; Foxon, CT
      Blue emission from arsenic doped gallium nitride

      JOURNAL OF CRYSTAL GROWTH
    53. Li, W; Turpeinen, J; Melanen, P; Savolainen, P; Uusimaa, P; Pessa, M
      Growth of strain-compensated GaInNAs/GaAsP quantum wells for 1.3 mu m lasers

      JOURNAL OF CRYSTAL GROWTH
    54. Monroy, E; Calle, F; Pau, JL; Munoz, E; Omnes, F; Beaumont, B; Gibart, P
      AlGaN-based UV photodetectors

      JOURNAL OF CRYSTAL GROWTH
    55. Pau, JL; Monroy, E; Munoz, E; Naranjo, FB; Calle, F; Sanchez-Garcia, MA; Calleja, E
      AlGaN photodetectors grown on Si(111) by molecular beam epitaxy

      JOURNAL OF CRYSTAL GROWTH
    56. Dumont, J; Monroy, E; Munoz, E; Caudano, R; Sporken, R
      Investigation of metal-GaN and metal-AlGaN contacts by XPS depth profiles and by electrical measurements

      JOURNAL OF CRYSTAL GROWTH
    57. Mistele, D; Fedler, F; Klausing, H; Rotter, T; Stemmer, J; Semchinova, OK; Aderhold, J
      Investigation of Ni/Au-contacts on p-GaN annealed in different atmospheres

      JOURNAL OF CRYSTAL GROWTH
    58. Uren, MJ; Lee, D; Hughes, BT; Parmiter, PJM; Birbeck, JC; Balmer, R; Martin, T; Wallis, RH; Jones, SK
      Electrical characterisation of AlGaN/GaN heterostructure wafers for high-power HFETs

      JOURNAL OF CRYSTAL GROWTH
    59. Webb, JB; Tang, H; Bardwell, JA; Moisa, S; Peters, C; MacElwee, T
      Defect reduction in GaN epilayers and HFET structures grown on (0001)sapphire by ammonia MBE

      JOURNAL OF CRYSTAL GROWTH
    60. Shiraishi, Y; Takano, K; Matsubara, J; Iida, T; Takase, N; Machida, N; Kuramoto, M; Yamagishi, H
      Growth of silicon crystal with a diameter of 400 mm and weight of 400 kg

      JOURNAL OF CRYSTAL GROWTH
    61. Inoue, T; Seki, Y; Oda, O; Kurai, S; Yamada, Y; Taguchi, T
      Growth of bulk GaN single crystals by the pressure-controlled solution growth method

      JOURNAL OF CRYSTAL GROWTH
    62. Xue, QK; Xue, QZ; Kuwano, S; Nakayama, K; Sakurai, T; Tsong, IST; Qiu, XG; Segawa, Y
      Surface superstructures and optical properties of wurtzite GaN grown on 6H-SiC

      JOURNAL OF CRYSTAL GROWTH
    63. Kikawa, J; Yoshida, S; Itoh, Y
      Hexagonal GaN1-xPx growth by laser-assisted metalorganic chemical vapor deposition

      JOURNAL OF CRYSTAL GROWTH
    64. Wang, JF; Omino, A; Isshiki, M
      Growth and conductive type control of ZnSe single crystals by vertical Bridgman method

      JOURNAL OF CRYSTAL GROWTH
    65. Asahi, T; Arakawa, A; Sato, K
      Growth of large-diameter ZnTe single crystals by the vertical gradient freezing method

      JOURNAL OF CRYSTAL GROWTH
    66. Kato, H; Udono, H; Kikuma, I
      Growth and characterization of Br-doped ZnSe single crystals grown by a vertical sublimation method

      JOURNAL OF CRYSTAL GROWTH
    67. Tanaka, A; Sukegawa, T
      ZnSe growth from zinc chloride solvent by successive liquid phase epitaxy

      JOURNAL OF CRYSTAL GROWTH
    68. Namikawa, Y; Fujiwara, S; Kotani, T
      Al diffused conductive ZnSe substrates grown by physical vapor transport method

      JOURNAL OF CRYSTAL GROWTH
    69. Sakagami, N; Yamashita, M; Sekiguchi, T; Miyashita, S; Obara, K; Shishido, T
      Variation of electrical properties on growth sectors of ZnO single crystals

      JOURNAL OF CRYSTAL GROWTH
    70. Debnath, MC; Souma, I; Takahashi, M; Sato, T; Pittini, R; Sato, F; Tanaka, M
      Excitonic properties of Cd1-xMnxTe quantum wells grown by molecular beam epitaxy

      JOURNAL OF CRYSTAL GROWTH
    71. Maki, H; Ichinose, N; Ohashi, N; Haneda, H; Tanaka, J
      Lattice relaxation of a ZnO(0001) surface accompanied by a decrease in antibonding feature

      JOURNAL OF CRYSTAL GROWTH
    72. Ozawa, T; Hayakawa, Y; Balakrishnan, K; Ohonishi, F; Koyama, T; Kumagawa, M
      Growth of InxGa1-xAs bulk mixed crystals with a uniform composition by therotational Bridgman method

      JOURNAL OF CRYSTAL GROWTH
    73. Fujioka, H; Ohta, J; Katada, H; Ikeda, T; Noguchi, Y; Oshima, M
      Epitaxial growth of semiconductors on SrTiO3 substrates

      JOURNAL OF CRYSTAL GROWTH
    74. Koo, BH; Hanada, T; Makino, H; Chang, JH; Yao, T
      RHEED investigation of the formation process of InAs quantum dots on (100)InAlAs/InP for application to photonic devices in the 1.55 mu m range

      JOURNAL OF CRYSTAL GROWTH
    75. Hayakawa, Y; Balakrishnan, K; Iida, S; Shibata, Y; Koyama, T; Kumagawa, M
      Optimization of circular trench geometry of GaAs(111)B substrates for growth of high quality InxGa1-xAs bridge layers

      JOURNAL OF CRYSTAL GROWTH
    76. Kangawa, Y; Wakizono, K; Kuwano, N; Oki, K; Ito, T
      Formation mechanism of Al-segregated region in InAlAs/(110)InP

      JOURNAL OF CRYSTAL GROWTH
    77. Dhanasekaran, R; Fareed, RSQ; Ramasamy, P
      Simulation studies on the liquid phase electroepitaxial growth of III-V compound semiconductors

      JOURNAL OF CRYSTAL GROWTH
    78. Zou, ZG; Ye, JH; Arakawa, H
      Growth, photophysical and structural properties of Bi2InNbO7

      JOURNAL OF CRYSTAL GROWTH
    79. Miyazaki, Y; Kajitani, T
      Preparation of Bi2Te3 films by electrodeposition

      JOURNAL OF CRYSTAL GROWTH
    80. Miyahara, T; Shimizu, M
      Single crystal growth of organic semiconductors by the Repeated Solid Solvent Growth Method using melted anthracene as a solvent

      JOURNAL OF CRYSTAL GROWTH
    81. Ise, T; Takahashi, K
      Crystal structure and conducting properties of a SbF6 salt of BEDT-BDTBF

      JOURNAL OF CRYSTAL GROWTH
    82. Lie, WC; Acosta, AS; Fujioka, H; Mano, T; Mitsui, T; Takeuchi, M; Oshima, M
      Theoretical study of embedded InAs quantum dots in GaAs

      JOURNAL OF CRYSTAL GROWTH
    83. Cho, AY; Sivco, DL; Ng, HM; Gmachl, C; Tredicucci, A; Hutchinson, AL; Chu, SNG; Capasso, F
      Quantum devices, MBE technology for the 21st century

      JOURNAL OF CRYSTAL GROWTH
    84. Notzel, R; Ploog, KH
      MBE of quantum wires and quantum dots

      JOURNAL OF CRYSTAL GROWTH
    85. Braun, W; Kaganer, VM; Trampert, A; Schonherr, HP; Gong, Q; Notzel, R; Daweritz, L; Ploog, KH
      Diffusion and incorporation: shape evolution during overgrowth on structured substrates

      JOURNAL OF CRYSTAL GROWTH
    86. Shimomura, S; Kitano, Y; Kuge, H; Kitada, T; Nakajima, K; Hiyamizu, S
      Lattice-matched InxGa1-xAs/InxAl1-xAs quantum wells (x=0.18 and 0.19) grown on (411)A- and (100)-oriented InGaAs ternary substrates by molecular beamepitaxy

      JOURNAL OF CRYSTAL GROWTH
    87. Reyes-Gomez, E; Matos-Abiague, A; de Dios-Leyva, M; Oliveira, LE
      The fractional-dimensional space approach to MBE-grown quantum-sized semiconductor low-dimensional systems

      JOURNAL OF CRYSTAL GROWTH
    88. Taguchi, A; Shiraishi, K; Ito, T
      First-principles study of Si incorporation processes on a GaAs(111)A surface

      JOURNAL OF CRYSTAL GROWTH
    89. Li, W; Laaksonen, S; Haapamaa, J; Pessa, M
      Growth of device-quality GaAs layer directly on (001) Ge substrates by both solid-source and gas-source MBE

      JOURNAL OF CRYSTAL GROWTH
    90. Chen, PP; Miao, ZL; Lu, W
      In-situ PR study of the confined states in AlGaAs/GaAs surface QW

      JOURNAL OF CRYSTAL GROWTH
    91. Obata, T; Fukushima, S; Araya, T; Otsuka, N
      Photoluminescence of nearly stoichiometric LT-GaAs and LT-GaAs/AlAs MQW

      JOURNAL OF CRYSTAL GROWTH
    92. Gozu, S; Kita, T; Sato, Y; Yamada, S; Tomizawa, M
      Characterization of high indium content metamorphic InGaAs/InAlAs modulation-doped heterostructures

      JOURNAL OF CRYSTAL GROWTH
    93. Gozu, S; Kita, T; Kikutani, T; Yamada, S
      Critical layer thickness study in In0.75Ga0.25As/In0.5Al0.5As pseudomorphic resonant tunneling diode structure grown on GaAs substrates

      JOURNAL OF CRYSTAL GROWTH
    94. Wang, G; Ren, G; Le, L; Lee, HP; Pinsukanjana, P; Hubbard, J; Kao, YC
      Implementation of integrated real-time multi-sensors on a multi-wafer production MBE system

      JOURNAL OF CRYSTAL GROWTH
    95. Orsila, S; Tukiainen, A; Uusimaa, P; Dekker, J; Leinonen, T; Pessa, M
      Growth of GaInP on misoriented substrates using solid source MBE

      JOURNAL OF CRYSTAL GROWTH
    96. Ratanathammaphan, S; Thainoi, S; Changmoang, P; Sopitpan, S; Antarasena, C
      Molecular beam epitaxy growth of InP layers on GaAs substrates using GaP decomposition source

      JOURNAL OF CRYSTAL GROWTH
    97. Nagano, M; Oishi, Y; Ohnuma, T
      Epitaxial growth and photoluminescence of AlAs/GaP short-period superlattices

      JOURNAL OF CRYSTAL GROWTH
    98. Kuenzel, H; Biermann, K; Nickel, D; Elsaesser, T
      Low-temperature MBE growth and characteristics of InP-based AlInAs/GaInAs MQW structures

      JOURNAL OF CRYSTAL GROWTH
    99. Kitada, T; Aoki, T; Watanabe, I; Shimomura, S; Hiyamizu, S
      Optimized channel thickness for high electron mobility in pseudomorphic In0.74Ga0.26As/In0.52Al0.48As quantum-well HEMT structures with (411)A super-flat interfaces grown by MBE

      JOURNAL OF CRYSTAL GROWTH
    100. Takasaki, H; Kawamura, Y; Katayama, T; Yamamoto, A; Inoue, N
      Electroluminescence of In0.53Ga0.47As/GaAs0.5Sb0.5 type II multiple quantum well diodes lattice-matched to InP

      JOURNAL OF CRYSTAL GROWTH


ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 06/08/20 alle ore 04:25:13