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- Voloshin, AE; Nishinaga, T; Ge, P; Huo, C

Te distribution in space grown GaSb*JOURNAL OF CRYSTAL GROWTH*

- Gao, YZ; Kan, H; Gao, FS; Gong, XY; Yamaguchi, T

Improved purity of long-wavelength InAsSb epilayers grown by melt epitaxy in fused silica boats*JOURNAL OF CRYSTAL GROWTH*

- Kim, JS; Yu, PW; Leem, JY; Lee, JI; Noh, SK; Kim, JS; Kim, GH; Kang, SK; Ban, SI; Kim, SG; Jang, YD; Lee, UH; Yim, JS; Lee, D

Growth of Si-doped InAs quantum dots and annealing effects on size distribution*JOURNAL OF CRYSTAL GROWTH*

- Kim, GH; Choi, JB; Leem, JY; Lee, JI; Noh, SK; Kim, JS; Kim, JS; Kang, SK; Ban, SI

Optical properties of InAs epilayers grown on GaAs by molecular beam epitaxy*JOURNAL OF CRYSTAL GROWTH*

- Wu, J; Iordache, G; Summers, HD; Roberts, JS

Optical characteristics of VCSEL pumped microchip lasers*OPTICS COMMUNICATIONS*

- Xu, HZ; Akahane, K; Song, HZ; Okada, Y; Kawabe, M

Two-dimensional ordering arrays of InAsxP1-x islands formed by As/P exchange reaction on InP (311)B surface*JOURNAL OF CRYSTAL GROWTH*

- Fong, WK; Zhu, CF; Leung, BH; Surya, C

High-mobility GaN epilayer grown by RF plasma-assisted molecular beam epitaxy on intermediate-temperature GaN buffer layer*JOURNAL OF CRYSTAL GROWTH*

- Song, KM; Kim, DJ; Moon, YT; Park, SJ

Characteristics of GaN grown by metalorganic chemical vapor deposition using trimethylgallium and triethylgallium*JOURNAL OF CRYSTAL GROWTH*

- Chalker, PR; Davock, H; Thomas, S; Joyce, TB; Bullough, TJ; Potter, RJ; Balkan, N

Compositional variation in as-grown GaInNAs/GaAs quantum well structures*JOURNAL OF CRYSTAL GROWTH*

- Yodo, T; Ando, H; Nosei, D; Seko, J; Sakai, K; Shimeno, M; Harada, Y

Mutual influence among inert nitrogen molecules, nitrogen radical atoms, nitrogen radical molecules and nitrogen molecular ions on growth process andcrystal structure of GaN heteroepitaxial layers grown on Si(001) and Si(111) substrates by molecular-beam epitaxy assisted by electron cyclotron resonance*JOURNAL OF CRYSTAL GROWTH*

T. Yodo*et al.*, "Mutual influence among inert nitrogen molecules, nitrogen radical atoms, nitrogen radical molecules and nitrogen molecular ions on growth process andcrystal structure of GaN heteroepitaxial layers grown on Si(001) and Si(111) substrates by molecular-beam epitaxy assisted by electron cyclotron resonance",*J CRYST GR*, 233(1-2), 2001, pp. 22-33 - Pal, D; Pan, D; Towe, E; Chen, SJ

Characterization of (In,Ga,Al)As/GaAs quantum-dot superlattice structures by high-resolution X-ray diffraction*JOURNAL OF CRYSTAL GROWTH*

- Wu, X; Weatherly, GC

Composition modulations in tensile strained In1-xGaxAsyP1-y films grown on(100) InP substrates*JOURNAL OF CRYSTAL GROWTH*

- Vanhollebeke, K; D'Hondt, M; Moerman, I; Van Daele, P; Demeester, P

MOVPE based Zn diffusion into InP and InAsP/InP hetero structures*JOURNAL OF CRYSTAL GROWTH*

- Elias, P; Cambel, V; Hasenohrl, S; Kostic, I

OMCVD growth of InP and InGaAs on InP non-planar substrates patterned with{110} quasi facets*JOURNAL OF CRYSTAL GROWTH*

- Yoon, SF; Yip, KH; Zheng, HQ

Deep level effects on the characteristics of Al0.25Ga0.75As/In0.20Ga0.80As/GaAs high electron mobility transistors grown by solid source MBE*JOURNAL OF CRYSTAL GROWTH*

- Asomoza, R; Elyukhin, VA; Martinez-Juarez, J; Pena-Sierra, R

Crystallization of the A(x)(III)B(1-x)(III)C(V) alloys from the supercooled liquid solutions*JOURNAL OF CRYSTAL GROWTH*

- Cao, X; Zeng, YP; Kong, MY; Pan, LA; Wang, BQ; Zhu, ZP; Wang, XG; Chang, Y; Chu, JH

Photoluminescence of AlGaAs/InGaAs/GaAs pseudomorphic HEMTs with differentthickness of spacer layer*JOURNAL OF CRYSTAL GROWTH*

- He, MQ; Zhou, PZ; Mohammad, SN; Harris, GL; Halpern, JB; Jacobs, R; Sarney, WL; Salamanca-Riba, L

Growth of GaN nanowires by direct reaction of Ga with NH3*JOURNAL OF CRYSTAL GROWTH*

- Persson, C; da Silva, AF; Ahuja, R; Johansson, B

Effective electronic masses in wurtzite and zinc-blende GaN and AlN*JOURNAL OF CRYSTAL GROWTH*

- Persson, C; Ahuja, R; da Silva, AF; Johansson, B

First-principle calculations of optical properties of wurtzite AlN and GaN*JOURNAL OF CRYSTAL GROWTH*

- Maclean, JO; Wallis, DJ; Martin, T; Houlton, MR; Simons, AJ

Nitrogen incorporation into GaAs(N), Al0.3Ga0.7As(N) and In0.15Ga0.85As(N)by chemical beam epitaxy (CBE) using 1,1-dimethylhydrazine*JOURNAL OF CRYSTAL GROWTH*

- Kumagai, Y; Takemoto, K; Hasegawa, T; Koukitu, A; Seki, H

Thermodynamics on tri-halide vapor-phase epitaxy of GaN and InxGa1-xN using GaCl3 and InCl3*JOURNAL OF CRYSTAL GROWTH*

- Parala, H; Devi, A; Hipler, F; Maile, E; Birkner, A; Becker, HW; Fischer, RA

Investigations on InN whiskers grown by chemical vapour deposition*JOURNAL OF CRYSTAL GROWTH*

- Balmer, RS; Pickering, C; Kier, AM; Birbeck, JCH; Saker, M; Martin, T

In situ optical monitoring of AlGaN thickness and composition during MOVPEgrowth of AlGaN/GaN microwave HFETs*JOURNAL OF CRYSTAL GROWTH*

- Suski, T; Litwin-Staszewska, E; Perlin, P; Wisniewski, P; Teisseyre, H; Grzegory, I; Bockowski, M; Porowski, S; Saarinen, K; Nissila, J

Optical and electrical properties of Be doped GaN bulk crystals*JOURNAL OF CRYSTAL GROWTH*

- Kusakabe, K; Kishino, K; Kikuchi, A; Yamada, T; Sugihara, D; Nakamura, S

Reduction of threading dislocations in migration enhanced epitaxy grown GaN with N-polarity by use of AlN multiple interlayer*JOURNAL OF CRYSTAL GROWTH*

- Fewster, PF; Andrew, NL; Foxon, CT

Microstructure and composition analysis of group III nitrides by X-ray scattering*JOURNAL OF CRYSTAL GROWTH*

- Katsikini, M; Paloura, EC; Antonopoulos, J; Bressler, P; Moustakas, TD

Study of group-III binary and ternary nitrides using X-ray absorption finestructure measurements*JOURNAL OF CRYSTAL GROWTH*

- Cherns, D; Mokhtari, H; Jiao, CG; Averbeck, R; Riechert, H

Profiling band structure in GaN devices by electron holography*JOURNAL OF CRYSTAL GROWTH*

- Sharma, N; Tricker, D; Thomas, P; Bougrioua, Z; Jacobs, K; Cheyns, J; Moerman, I; Thrush, T; Considine, L; Boyd, A; Humphreys, C

Chemical mapping of InGaN MQWs*JOURNAL OF CRYSTAL GROWTH*

- Pereira, S; Correia, MR; Monteiro, T; Pereira, E; Soares, MR; Alves, E

Indium content determination related with structural and optical properties of InGaN layers*JOURNAL OF CRYSTAL GROWTH*

- Bulutay, C; Ridley, BK; Zakhleniuk, NA

Polar optical phonon scattering and negative Kromer-Esaki-Tsu differentialconductivity in bulk GaN*JOURNAL OF CRYSTAL GROWTH*

- Xia, R; Xu, H; Harrison, I; Beaument, B; Andrianov, A; Dods, SRA; Morgan, JM; Larkins, EC

Spectrally resolved electroluminescence microscopy and mu-electroluminescence investigation of GaN-based LEDs*JOURNAL OF CRYSTAL GROWTH*

- Pozina, G; Bergman, JP; Monemar, B; Iwaya, M; Nitta, S; Amano, H; Akasaki, I

Photoluminescence of InGaN/GaN multiple quantum wells grown by mass transport*JOURNAL OF CRYSTAL GROWTH*

- Henley, SJ; Bewick, A; Cherns, D; Ponce, FA

Luminescence studies of defects and piezoelectric fields in InGaN/GaN single quantum wells*JOURNAL OF CRYSTAL GROWTH*

- Hangleiter, A; Heppel, S; Off, J; Kuhn, B; Scholz, F; Bader, S; Hahn, B; Harle, V

Analysis of the threshold current in nitride-based lasers*JOURNAL OF CRYSTAL GROWTH*

- Winser, AJ; Harrison, I; Novikov, SV; Davis, CS; Campion, R; Cheng, TS; Foxon, CT

Blue emission from arsenic doped gallium nitride*JOURNAL OF CRYSTAL GROWTH*

- Li, W; Turpeinen, J; Melanen, P; Savolainen, P; Uusimaa, P; Pessa, M

Growth of strain-compensated GaInNAs/GaAsP quantum wells for 1.3 mu m lasers*JOURNAL OF CRYSTAL GROWTH*

- Monroy, E; Calle, F; Pau, JL; Munoz, E; Omnes, F; Beaumont, B; Gibart, P

AlGaN-based UV photodetectors*JOURNAL OF CRYSTAL GROWTH*

- Pau, JL; Monroy, E; Munoz, E; Naranjo, FB; Calle, F; Sanchez-Garcia, MA; Calleja, E

AlGaN photodetectors grown on Si(111) by molecular beam epitaxy*JOURNAL OF CRYSTAL GROWTH*

- Dumont, J; Monroy, E; Munoz, E; Caudano, R; Sporken, R

Investigation of metal-GaN and metal-AlGaN contacts by XPS depth profiles and by electrical measurements*JOURNAL OF CRYSTAL GROWTH*

- Mistele, D; Fedler, F; Klausing, H; Rotter, T; Stemmer, J; Semchinova, OK; Aderhold, J

Investigation of Ni/Au-contacts on p-GaN annealed in different atmospheres*JOURNAL OF CRYSTAL GROWTH*

- Uren, MJ; Lee, D; Hughes, BT; Parmiter, PJM; Birbeck, JC; Balmer, R; Martin, T; Wallis, RH; Jones, SK

Electrical characterisation of AlGaN/GaN heterostructure wafers for high-power HFETs*JOURNAL OF CRYSTAL GROWTH*

- Inoue, T; Seki, Y; Oda, O; Kurai, S; Yamada, Y; Taguchi, T

Growth of bulk GaN single crystals by the pressure-controlled solution growth method*JOURNAL OF CRYSTAL GROWTH*

- Xue, QK; Xue, QZ; Kuwano, S; Nakayama, K; Sakurai, T; Tsong, IST; Qiu, XG; Segawa, Y

Surface superstructures and optical properties of wurtzite GaN grown on 6H-SiC*JOURNAL OF CRYSTAL GROWTH*

- Kikawa, J; Yoshida, S; Itoh, Y

Hexagonal GaN1-xPx growth by laser-assisted metalorganic chemical vapor deposition*JOURNAL OF CRYSTAL GROWTH*

- Ozawa, T; Hayakawa, Y; Balakrishnan, K; Ohonishi, F; Koyama, T; Kumagawa, M

Growth of InxGa1-xAs bulk mixed crystals with a uniform composition by therotational Bridgman method*JOURNAL OF CRYSTAL GROWTH*

- Fujioka, H; Ohta, J; Katada, H; Ikeda, T; Noguchi, Y; Oshima, M

Epitaxial growth of semiconductors on SrTiO3 substrates*JOURNAL OF CRYSTAL GROWTH*

- Koo, BH; Hanada, T; Makino, H; Chang, JH; Yao, T

RHEED investigation of the formation process of InAs quantum dots on (100)InAlAs/InP for application to photonic devices in the 1.55 mu m range*JOURNAL OF CRYSTAL GROWTH*

- Hayakawa, Y; Balakrishnan, K; Iida, S; Shibata, Y; Koyama, T; Kumagawa, M

Optimization of circular trench geometry of GaAs(111)B substrates for growth of high quality InxGa1-xAs bridge layers*JOURNAL OF CRYSTAL GROWTH*

- Kangawa, Y; Wakizono, K; Kuwano, N; Oki, K; Ito, T

Formation mechanism of Al-segregated region in InAlAs/(110)InP*JOURNAL OF CRYSTAL GROWTH*

- Dhanasekaran, R; Fareed, RSQ; Ramasamy, P

Simulation studies on the liquid phase electroepitaxial growth of III-V compound semiconductors*JOURNAL OF CRYSTAL GROWTH*

- Lie, WC; Acosta, AS; Fujioka, H; Mano, T; Mitsui, T; Takeuchi, M; Oshima, M

Theoretical study of embedded InAs quantum dots in GaAs*JOURNAL OF CRYSTAL GROWTH*

- Notzel, R; Ploog, KH

MBE of quantum wires and quantum dots*JOURNAL OF CRYSTAL GROWTH*

- Braun, W; Kaganer, VM; Trampert, A; Schonherr, HP; Gong, Q; Notzel, R; Daweritz, L; Ploog, KH

Diffusion and incorporation: shape evolution during overgrowth on structured substrates*JOURNAL OF CRYSTAL GROWTH*

- Shimomura, S; Kitano, Y; Kuge, H; Kitada, T; Nakajima, K; Hiyamizu, S

Lattice-matched InxGa1-xAs/InxAl1-xAs quantum wells (x=0.18 and 0.19) grown on (411)A- and (100)-oriented InGaAs ternary substrates by molecular beamepitaxy*JOURNAL OF CRYSTAL GROWTH*

- Reyes-Gomez, E; Matos-Abiague, A; de Dios-Leyva, M; Oliveira, LE

The fractional-dimensional space approach to MBE-grown quantum-sized semiconductor low-dimensional systems*JOURNAL OF CRYSTAL GROWTH*

- Taguchi, A; Shiraishi, K; Ito, T

First-principles study of Si incorporation processes on a GaAs(111)A surface*JOURNAL OF CRYSTAL GROWTH*

- Chen, PP; Miao, ZL; Lu, W

In-situ PR study of the confined states in AlGaAs/GaAs surface QW*JOURNAL OF CRYSTAL GROWTH*

- Gozu, S; Kita, T; Sato, Y; Yamada, S; Tomizawa, M

Characterization of high indium content metamorphic InGaAs/InAlAs modulation-doped heterostructures*JOURNAL OF CRYSTAL GROWTH*

- Gozu, S; Kita, T; Kikutani, T; Yamada, S

Critical layer thickness study in In0.75Ga0.25As/In0.5Al0.5As pseudomorphic resonant tunneling diode structure grown on GaAs substrates*JOURNAL OF CRYSTAL GROWTH*

- Orsila, S; Tukiainen, A; Uusimaa, P; Dekker, J; Leinonen, T; Pessa, M

Growth of GaInP on misoriented substrates using solid source MBE*JOURNAL OF CRYSTAL GROWTH*

- Nagano, M; Oishi, Y; Ohnuma, T

Epitaxial growth and photoluminescence of AlAs/GaP short-period superlattices*JOURNAL OF CRYSTAL GROWTH*

- Kuenzel, H; Biermann, K; Nickel, D; Elsaesser, T

Low-temperature MBE growth and characteristics of InP-based AlInAs/GaInAs MQW structures*JOURNAL OF CRYSTAL GROWTH*

- Kitada, T; Aoki, T; Watanabe, I; Shimomura, S; Hiyamizu, S

Optimized channel thickness for high electron mobility in pseudomorphic In0.74Ga0.26As/In0.52Al0.48As quantum-well HEMT structures with (411)A super-flat interfaces grown by MBE*JOURNAL OF CRYSTAL GROWTH*

- Takasaki, H; Kawamura, Y; Katayama, T; Yamamoto, A; Inoue, N

Electroluminescence of In0.53Ga0.47As/GaAs0.5Sb0.5 type II multiple quantum well diodes lattice-matched to InP*JOURNAL OF CRYSTAL GROWTH*

- Asahi, H; Konishi, K; Maeda, O; Ayabe, A; Lee, HJ; Mizobata, A; Asami, K; Gonda, S

Gas source MBE growth of TlInGaAs/InP DH structures for the application toWDM optical fiber communication systems*JOURNAL OF CRYSTAL GROWTH*

- Saarinen, M; Xiang, N; Vilokkinen, V; Melanen, P; Orsila, S; Uusimaa, P; Savolainen, P; Toivonen, M; Pessa, M

Red vertical-cavity surface-emitting lasers grown by solid-source molecular beam epitaxy*JOURNAL OF CRYSTAL GROWTH*

- Zhang, YG; Chen, JX; Chen, YQ; Qi, M; Li, AZ; Frojdh, K; Stoltz, B

Characteristics of strain compensated 1.3 mu m InAsP/InGaAsP ridge waveguide laser diodes grown by gas source MBE*JOURNAL OF CRYSTAL GROWTH*

- Kuang, GK; Bohm, G; Grau, M; Rosel, G; Amann, MC

Long wavelength InGaAs-InGaAlAs-InP lasers grown in MBE*JOURNAL OF CRYSTAL GROWTH*

- Orsila, S; Leinonen, T; Uusimaa, P; Saarinen, M; Guina, M; Sipila, P; Vilokkinen, V; Melanen, P; Dumitrescu, M; Pessa, M

Resonant cavity light-emitting diodes grown by solid source MBE*JOURNAL OF CRYSTAL GROWTH*

- Kuo, JM; Wang, YC; Weiner, JS; Sivco, D; Cho, AY; Chen, YK

High-performance planar Al0.48In0.52As/In0.53Ga0.47As high electron mobility transistors*JOURNAL OF CRYSTAL GROWTH*

- Kong, MY; Zhang, JP; Wang, XL; Sun, DZ

Hydrogen behavior in GaN epilayers grown by NH3-MBE*JOURNAL OF CRYSTAL GROWTH*

- Gurusinghe, KKMN; Falth, F; Andersson, TG

Limitations in MBE-grown GaN and AlGaN/GaN due to dislocations and lateralinhomogeneities*JOURNAL OF CRYSTAL GROWTH*

- Liu, HF; Chen, H; Wan, L; Li, ZQ; Huang, Q; Zhou, JM

Epitaxial growth and characterization of GaN Films on (001) GaAs substrates by radio-frequency molecular beam epitaxy*JOURNAL OF CRYSTAL GROWTH*

- Kimura, R; Takahashi, K

Investigation of the initial growth of cubic-GaN using an AlGaAs buffer layer grown on GaAs (100) by molecular beam epitaxy*JOURNAL OF CRYSTAL GROWTH*

- Qu, B; Zheng, XH; Wang, YT; Xu, DP; Lin, SM; Yang, H; Liang, JW

Orientation relationship between hexagonal inclusions and cubic GaN grown on GaAs(001) substrates*JOURNAL OF CRYSTAL GROWTH*

- Yodo, T; Ando, H; Tsuchiya, H; Nosei, D; Shimeno, M; Harada, Y

Influence of substrate nitridation before growth on initial growth processof GaN heteroepitaxial layers grown on Si(001) and Si(111) substrates by ECR-MBE*JOURNAL OF CRYSTAL GROWTH*

- Tampo, H; Asahi, H; Imanishi, Y; Hiroki, M; Ohnishi, K; Yamada, K; Asami, K; Gonda, S

Growth of high-quality polycrystalline GaN on glass substrate by gas source molecular beam epitaxy*JOURNAL OF CRYSTAL GROWTH*

- Shen, XQ; Ide, T; Cho, SH; Shimizu, M; Okumura, H; Sonoda, S; Shimizu, S

Growth and characterizations of AlGaN/GaN heterostructures using multi-AlNbuffer layers in plasma-assisted molecular beam epitaxy*JOURNAL OF CRYSTAL GROWTH*

- Ebling, DG; Kirste, L; Benz, KW; Teofilov, N; Thonke, K; Sauer, R

Optical properties and ordering of AlxGa1-xN MBE-layers*JOURNAL OF CRYSTAL GROWTH*

- Kitamura, T; Cho, SH; Ishida, Y; Ide, T; Shen, XQ; Nakanishi, H; Chichibu, S; Okumura, H

Growth and characterization of cubic InGaN epilayers on 3C-SiC by RF MBE*JOURNAL OF CRYSTAL GROWTH*

- Foxon, CT; Novikov, SV; Campion, RP; Davis, CS; Cheng, TS; Winser, AJ; Harrison, I

Growth of GaNAs films by molecular beam epitaxy*JOURNAL OF CRYSTAL GROWTH*

- Noda, T; Koshiba, S; Nagamune, Y; Sakaki, H

Structural and optical properties of MBE grown GaNAs/GaAs quantum well structures*JOURNAL OF CRYSTAL GROWTH*

- Kitatani, T; Kondow, M; Tanaka, T

Molecular beam epitaxy of GaInNAs by using solid source arsenic*JOURNAL OF CRYSTAL GROWTH*

- Li, W; Turpeinen, J; Melanen, P; Savolainen, P; Uusimaa, P; Pessa, M

Strain-compensated GaInNAs/GaAsP/GaAs/GaInP quantum well lasers grown by gas-source molecular beam epitaxy*JOURNAL OF CRYSTAL GROWTH*

- Harmand, JC; Ungaro, G; Ramos, J; Rao, EVK; Saint-Girons, G; Teissier, R; Le Roux, G; Largeau, L; Patriarche, G

Investigations on GaAsSbN/GaAs quantum wells for 1.3-1.55 mu m emission*JOURNAL OF CRYSTAL GROWTH*

- Xin, HP; Welty, RJ; Hong, YG; Tu, CW

Gas-source MBE growth of Ga(In)NP/GaP structures and their applications for red light-emitting diodes*JOURNAL OF CRYSTAL GROWTH*

- Prevot, I; Marcadet, X; Durand, O; Bisaro, R; Bouchier, A; Julien, FH

Characterisation and optimisation of MBE grown arsenide/antimonide interfaces*JOURNAL OF CRYSTAL GROWTH*

- Mozume, T; Georgiev, N; Yoshida, H

Dopant-induced interface disorder in InGaAs/AlAsSb heterostructures lattice matched to InP grown by molecular beam epitaxy*JOURNAL OF CRYSTAL GROWTH*

- Wilk, A; Fraisse, B; Christol, P; Boissier, G; Grech, P; El Gazouli, M; Rouillard, Y; Baranov, AN; Joullie, A

MBE growth of InAs/InAsSb/InAlAsSb "W" quantum well laser diodes emitting near 3 mu m*JOURNAL OF CRYSTAL GROWTH*

- Simanowski, S; Mermelstein, C; Walther, M; Herres, N; Kiefer, R; Rattunde, M; Schmitz, J; Wagner, J; Weimann, G

Growth and layer structure optimization of 2.26 mu m (AlGaIn)(AsSb) diode lasers for room temperature operation*JOURNAL OF CRYSTAL GROWTH*

- Li, X; Heber, J; Pullin, M; Gevaux, D; Phillips, CC

MBE growth of mid-infrared antimonide LEDs with strained electron barriers*JOURNAL OF CRYSTAL GROWTH*

- Marcadet, X; Rakovska, A; Prevot, I; Glastre, G; Vinter, B; Berger, V

MBE growth of room-temperature InAsSb mid-infrared detectors*JOURNAL OF CRYSTAL GROWTH*

- Zhou, YK; Asahi, H; Okumura, S; Kanamura, M; Asakura, J; Asami, K; Nakajima, M; Harima, H; Gonda, S

Growth and characterization of InMnAsSb for the sensor-memory device application at long wavelength region*JOURNAL OF CRYSTAL GROWTH*

- Tanaka, M; Mishima, Y

Low temperature molecular beam epitaxy growth and properties of(Ca, Er)As*JOURNAL OF CRYSTAL GROWTH*

- Jensen, JR; Hvam, JM; Langbein, W

Enhanced confinement energy in strained asymmetric T-shaped quantum wires*JOURNAL OF CRYSTAL GROWTH*

- Ohno, Y; Nitta, T; Shimomura, S; Hiyamizu, S

Stacking effect of self-organized In0.15Ga0.85As quantum wires grown on (775)B-oriented GaAs substrates by molecular beam epitaxy*JOURNAL OF CRYSTAL GROWTH*

- Garcia, JM; Gonzalez, L; Gonzalez, MU; Silveira, JP; Gonzalez, Y; Briones, F

InAs/InP(001) quantum wire formation due to anisotropic stress relaxation:in situ stress measurements*JOURNAL OF CRYSTAL GROWTH*

- Silveira, JP; Garcia, JM; Briones, F

Surface stress effects during MBE growth of III-V semiconductor nanostructures*JOURNAL OF CRYSTAL GROWTH*

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Documento generato il 31/10/20 alle ore 10:34:42