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La ricerca find articoli where soggetti phrase all words 'semiconducting III-V materials' sort by level,fasc_key/DESCEND, pagina_ini_num/ASCEND ha restituito 140 riferimenti
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    1. Voloshin, AE; Nishinaga, T; Ge, P; Huo, C
      Te distribution in space grown GaSb

      JOURNAL OF CRYSTAL GROWTH
    2. Gao, YZ; Kan, H; Gao, FS; Gong, XY; Yamaguchi, T
      Improved purity of long-wavelength InAsSb epilayers grown by melt epitaxy in fused silica boats

      JOURNAL OF CRYSTAL GROWTH
    3. Kim, JS; Yu, PW; Leem, JY; Lee, JI; Noh, SK; Kim, JS; Kim, GH; Kang, SK; Ban, SI; Kim, SG; Jang, YD; Lee, UH; Yim, JS; Lee, D
      Growth of Si-doped InAs quantum dots and annealing effects on size distribution

      JOURNAL OF CRYSTAL GROWTH
    4. Kim, GH; Choi, JB; Leem, JY; Lee, JI; Noh, SK; Kim, JS; Kim, JS; Kang, SK; Ban, SI
      Optical properties of InAs epilayers grown on GaAs by molecular beam epitaxy

      JOURNAL OF CRYSTAL GROWTH
    5. Wu, J; Iordache, G; Summers, HD; Roberts, JS
      Optical characteristics of VCSEL pumped microchip lasers

      OPTICS COMMUNICATIONS
    6. Xu, HZ; Akahane, K; Song, HZ; Okada, Y; Kawabe, M
      Two-dimensional ordering arrays of InAsxP1-x islands formed by As/P exchange reaction on InP (311)B surface

      JOURNAL OF CRYSTAL GROWTH
    7. Fong, WK; Zhu, CF; Leung, BH; Surya, C
      High-mobility GaN epilayer grown by RF plasma-assisted molecular beam epitaxy on intermediate-temperature GaN buffer layer

      JOURNAL OF CRYSTAL GROWTH
    8. Song, KM; Kim, DJ; Moon, YT; Park, SJ
      Characteristics of GaN grown by metalorganic chemical vapor deposition using trimethylgallium and triethylgallium

      JOURNAL OF CRYSTAL GROWTH
    9. Chalker, PR; Davock, H; Thomas, S; Joyce, TB; Bullough, TJ; Potter, RJ; Balkan, N
      Compositional variation in as-grown GaInNAs/GaAs quantum well structures

      JOURNAL OF CRYSTAL GROWTH
    10. Yodo, T; Ando, H; Nosei, D; Seko, J; Sakai, K; Shimeno, M; Harada, Y
      Mutual influence among inert nitrogen molecules, nitrogen radical atoms, nitrogen radical molecules and nitrogen molecular ions on growth process andcrystal structure of GaN heteroepitaxial layers grown on Si(001) and Si(111) substrates by molecular-beam epitaxy assisted by electron cyclotron resonance

      JOURNAL OF CRYSTAL GROWTH
    11. Pal, D; Pan, D; Towe, E; Chen, SJ
      Characterization of (In,Ga,Al)As/GaAs quantum-dot superlattice structures by high-resolution X-ray diffraction

      JOURNAL OF CRYSTAL GROWTH
    12. Wu, X; Weatherly, GC
      Composition modulations in tensile strained In1-xGaxAsyP1-y films grown on(100) InP substrates

      JOURNAL OF CRYSTAL GROWTH
    13. Vanhollebeke, K; D'Hondt, M; Moerman, I; Van Daele, P; Demeester, P
      MOVPE based Zn diffusion into InP and InAsP/InP hetero structures

      JOURNAL OF CRYSTAL GROWTH
    14. Elias, P; Cambel, V; Hasenohrl, S; Kostic, I
      OMCVD growth of InP and InGaAs on InP non-planar substrates patterned with{110} quasi facets

      JOURNAL OF CRYSTAL GROWTH
    15. Yoon, SF; Yip, KH; Zheng, HQ
      Deep level effects on the characteristics of Al0.25Ga0.75As/In0.20Ga0.80As/GaAs high electron mobility transistors grown by solid source MBE

      JOURNAL OF CRYSTAL GROWTH
    16. Asomoza, R; Elyukhin, VA; Martinez-Juarez, J; Pena-Sierra, R
      Crystallization of the A(x)(III)B(1-x)(III)C(V) alloys from the supercooled liquid solutions

      JOURNAL OF CRYSTAL GROWTH
    17. Cao, X; Zeng, YP; Kong, MY; Pan, LA; Wang, BQ; Zhu, ZP; Wang, XG; Chang, Y; Chu, JH
      Photoluminescence of AlGaAs/InGaAs/GaAs pseudomorphic HEMTs with differentthickness of spacer layer

      JOURNAL OF CRYSTAL GROWTH
    18. He, MQ; Zhou, PZ; Mohammad, SN; Harris, GL; Halpern, JB; Jacobs, R; Sarney, WL; Salamanca-Riba, L
      Growth of GaN nanowires by direct reaction of Ga with NH3

      JOURNAL OF CRYSTAL GROWTH
    19. Persson, C; da Silva, AF; Ahuja, R; Johansson, B
      Effective electronic masses in wurtzite and zinc-blende GaN and AlN

      JOURNAL OF CRYSTAL GROWTH
    20. Persson, C; Ahuja, R; da Silva, AF; Johansson, B
      First-principle calculations of optical properties of wurtzite AlN and GaN

      JOURNAL OF CRYSTAL GROWTH
    21. Maclean, JO; Wallis, DJ; Martin, T; Houlton, MR; Simons, AJ
      Nitrogen incorporation into GaAs(N), Al0.3Ga0.7As(N) and In0.15Ga0.85As(N)by chemical beam epitaxy (CBE) using 1,1-dimethylhydrazine

      JOURNAL OF CRYSTAL GROWTH
    22. Kumagai, Y; Takemoto, K; Hasegawa, T; Koukitu, A; Seki, H
      Thermodynamics on tri-halide vapor-phase epitaxy of GaN and InxGa1-xN using GaCl3 and InCl3

      JOURNAL OF CRYSTAL GROWTH
    23. Parala, H; Devi, A; Hipler, F; Maile, E; Birkner, A; Becker, HW; Fischer, RA
      Investigations on InN whiskers grown by chemical vapour deposition

      JOURNAL OF CRYSTAL GROWTH
    24. Balmer, RS; Pickering, C; Kier, AM; Birbeck, JCH; Saker, M; Martin, T
      In situ optical monitoring of AlGaN thickness and composition during MOVPEgrowth of AlGaN/GaN microwave HFETs

      JOURNAL OF CRYSTAL GROWTH
    25. Suski, T; Litwin-Staszewska, E; Perlin, P; Wisniewski, P; Teisseyre, H; Grzegory, I; Bockowski, M; Porowski, S; Saarinen, K; Nissila, J
      Optical and electrical properties of Be doped GaN bulk crystals

      JOURNAL OF CRYSTAL GROWTH
    26. Kusakabe, K; Kishino, K; Kikuchi, A; Yamada, T; Sugihara, D; Nakamura, S
      Reduction of threading dislocations in migration enhanced epitaxy grown GaN with N-polarity by use of AlN multiple interlayer

      JOURNAL OF CRYSTAL GROWTH
    27. Fewster, PF; Andrew, NL; Foxon, CT
      Microstructure and composition analysis of group III nitrides by X-ray scattering

      JOURNAL OF CRYSTAL GROWTH
    28. Katsikini, M; Paloura, EC; Antonopoulos, J; Bressler, P; Moustakas, TD
      Study of group-III binary and ternary nitrides using X-ray absorption finestructure measurements

      JOURNAL OF CRYSTAL GROWTH
    29. Cherns, D; Mokhtari, H; Jiao, CG; Averbeck, R; Riechert, H
      Profiling band structure in GaN devices by electron holography

      JOURNAL OF CRYSTAL GROWTH
    30. Sharma, N; Tricker, D; Thomas, P; Bougrioua, Z; Jacobs, K; Cheyns, J; Moerman, I; Thrush, T; Considine, L; Boyd, A; Humphreys, C
      Chemical mapping of InGaN MQWs

      JOURNAL OF CRYSTAL GROWTH
    31. Pereira, S; Correia, MR; Monteiro, T; Pereira, E; Soares, MR; Alves, E
      Indium content determination related with structural and optical properties of InGaN layers

      JOURNAL OF CRYSTAL GROWTH
    32. Bulutay, C; Ridley, BK; Zakhleniuk, NA
      Polar optical phonon scattering and negative Kromer-Esaki-Tsu differentialconductivity in bulk GaN

      JOURNAL OF CRYSTAL GROWTH
    33. Xia, R; Xu, H; Harrison, I; Beaument, B; Andrianov, A; Dods, SRA; Morgan, JM; Larkins, EC
      Spectrally resolved electroluminescence microscopy and mu-electroluminescence investigation of GaN-based LEDs

      JOURNAL OF CRYSTAL GROWTH
    34. Pozina, G; Bergman, JP; Monemar, B; Iwaya, M; Nitta, S; Amano, H; Akasaki, I
      Photoluminescence of InGaN/GaN multiple quantum wells grown by mass transport

      JOURNAL OF CRYSTAL GROWTH
    35. Henley, SJ; Bewick, A; Cherns, D; Ponce, FA
      Luminescence studies of defects and piezoelectric fields in InGaN/GaN single quantum wells

      JOURNAL OF CRYSTAL GROWTH
    36. Hangleiter, A; Heppel, S; Off, J; Kuhn, B; Scholz, F; Bader, S; Hahn, B; Harle, V
      Analysis of the threshold current in nitride-based lasers

      JOURNAL OF CRYSTAL GROWTH
    37. Winser, AJ; Harrison, I; Novikov, SV; Davis, CS; Campion, R; Cheng, TS; Foxon, CT
      Blue emission from arsenic doped gallium nitride

      JOURNAL OF CRYSTAL GROWTH
    38. Li, W; Turpeinen, J; Melanen, P; Savolainen, P; Uusimaa, P; Pessa, M
      Growth of strain-compensated GaInNAs/GaAsP quantum wells for 1.3 mu m lasers

      JOURNAL OF CRYSTAL GROWTH
    39. Monroy, E; Calle, F; Pau, JL; Munoz, E; Omnes, F; Beaumont, B; Gibart, P
      AlGaN-based UV photodetectors

      JOURNAL OF CRYSTAL GROWTH
    40. Pau, JL; Monroy, E; Munoz, E; Naranjo, FB; Calle, F; Sanchez-Garcia, MA; Calleja, E
      AlGaN photodetectors grown on Si(111) by molecular beam epitaxy

      JOURNAL OF CRYSTAL GROWTH
    41. Dumont, J; Monroy, E; Munoz, E; Caudano, R; Sporken, R
      Investigation of metal-GaN and metal-AlGaN contacts by XPS depth profiles and by electrical measurements

      JOURNAL OF CRYSTAL GROWTH
    42. Mistele, D; Fedler, F; Klausing, H; Rotter, T; Stemmer, J; Semchinova, OK; Aderhold, J
      Investigation of Ni/Au-contacts on p-GaN annealed in different atmospheres

      JOURNAL OF CRYSTAL GROWTH
    43. Uren, MJ; Lee, D; Hughes, BT; Parmiter, PJM; Birbeck, JC; Balmer, R; Martin, T; Wallis, RH; Jones, SK
      Electrical characterisation of AlGaN/GaN heterostructure wafers for high-power HFETs

      JOURNAL OF CRYSTAL GROWTH
    44. Inoue, T; Seki, Y; Oda, O; Kurai, S; Yamada, Y; Taguchi, T
      Growth of bulk GaN single crystals by the pressure-controlled solution growth method

      JOURNAL OF CRYSTAL GROWTH
    45. Xue, QK; Xue, QZ; Kuwano, S; Nakayama, K; Sakurai, T; Tsong, IST; Qiu, XG; Segawa, Y
      Surface superstructures and optical properties of wurtzite GaN grown on 6H-SiC

      JOURNAL OF CRYSTAL GROWTH
    46. Kikawa, J; Yoshida, S; Itoh, Y
      Hexagonal GaN1-xPx growth by laser-assisted metalorganic chemical vapor deposition

      JOURNAL OF CRYSTAL GROWTH
    47. Ozawa, T; Hayakawa, Y; Balakrishnan, K; Ohonishi, F; Koyama, T; Kumagawa, M
      Growth of InxGa1-xAs bulk mixed crystals with a uniform composition by therotational Bridgman method

      JOURNAL OF CRYSTAL GROWTH
    48. Fujioka, H; Ohta, J; Katada, H; Ikeda, T; Noguchi, Y; Oshima, M
      Epitaxial growth of semiconductors on SrTiO3 substrates

      JOURNAL OF CRYSTAL GROWTH
    49. Koo, BH; Hanada, T; Makino, H; Chang, JH; Yao, T
      RHEED investigation of the formation process of InAs quantum dots on (100)InAlAs/InP for application to photonic devices in the 1.55 mu m range

      JOURNAL OF CRYSTAL GROWTH
    50. Hayakawa, Y; Balakrishnan, K; Iida, S; Shibata, Y; Koyama, T; Kumagawa, M
      Optimization of circular trench geometry of GaAs(111)B substrates for growth of high quality InxGa1-xAs bridge layers

      JOURNAL OF CRYSTAL GROWTH
    51. Kangawa, Y; Wakizono, K; Kuwano, N; Oki, K; Ito, T
      Formation mechanism of Al-segregated region in InAlAs/(110)InP

      JOURNAL OF CRYSTAL GROWTH
    52. Dhanasekaran, R; Fareed, RSQ; Ramasamy, P
      Simulation studies on the liquid phase electroepitaxial growth of III-V compound semiconductors

      JOURNAL OF CRYSTAL GROWTH
    53. Lie, WC; Acosta, AS; Fujioka, H; Mano, T; Mitsui, T; Takeuchi, M; Oshima, M
      Theoretical study of embedded InAs quantum dots in GaAs

      JOURNAL OF CRYSTAL GROWTH
    54. Notzel, R; Ploog, KH
      MBE of quantum wires and quantum dots

      JOURNAL OF CRYSTAL GROWTH
    55. Braun, W; Kaganer, VM; Trampert, A; Schonherr, HP; Gong, Q; Notzel, R; Daweritz, L; Ploog, KH
      Diffusion and incorporation: shape evolution during overgrowth on structured substrates

      JOURNAL OF CRYSTAL GROWTH
    56. Shimomura, S; Kitano, Y; Kuge, H; Kitada, T; Nakajima, K; Hiyamizu, S
      Lattice-matched InxGa1-xAs/InxAl1-xAs quantum wells (x=0.18 and 0.19) grown on (411)A- and (100)-oriented InGaAs ternary substrates by molecular beamepitaxy

      JOURNAL OF CRYSTAL GROWTH
    57. Reyes-Gomez, E; Matos-Abiague, A; de Dios-Leyva, M; Oliveira, LE
      The fractional-dimensional space approach to MBE-grown quantum-sized semiconductor low-dimensional systems

      JOURNAL OF CRYSTAL GROWTH
    58. Taguchi, A; Shiraishi, K; Ito, T
      First-principles study of Si incorporation processes on a GaAs(111)A surface

      JOURNAL OF CRYSTAL GROWTH
    59. Chen, PP; Miao, ZL; Lu, W
      In-situ PR study of the confined states in AlGaAs/GaAs surface QW

      JOURNAL OF CRYSTAL GROWTH
    60. Gozu, S; Kita, T; Sato, Y; Yamada, S; Tomizawa, M
      Characterization of high indium content metamorphic InGaAs/InAlAs modulation-doped heterostructures

      JOURNAL OF CRYSTAL GROWTH
    61. Gozu, S; Kita, T; Kikutani, T; Yamada, S
      Critical layer thickness study in In0.75Ga0.25As/In0.5Al0.5As pseudomorphic resonant tunneling diode structure grown on GaAs substrates

      JOURNAL OF CRYSTAL GROWTH
    62. Orsila, S; Tukiainen, A; Uusimaa, P; Dekker, J; Leinonen, T; Pessa, M
      Growth of GaInP on misoriented substrates using solid source MBE

      JOURNAL OF CRYSTAL GROWTH
    63. Nagano, M; Oishi, Y; Ohnuma, T
      Epitaxial growth and photoluminescence of AlAs/GaP short-period superlattices

      JOURNAL OF CRYSTAL GROWTH
    64. Kuenzel, H; Biermann, K; Nickel, D; Elsaesser, T
      Low-temperature MBE growth and characteristics of InP-based AlInAs/GaInAs MQW structures

      JOURNAL OF CRYSTAL GROWTH
    65. Kitada, T; Aoki, T; Watanabe, I; Shimomura, S; Hiyamizu, S
      Optimized channel thickness for high electron mobility in pseudomorphic In0.74Ga0.26As/In0.52Al0.48As quantum-well HEMT structures with (411)A super-flat interfaces grown by MBE

      JOURNAL OF CRYSTAL GROWTH
    66. Takasaki, H; Kawamura, Y; Katayama, T; Yamamoto, A; Inoue, N
      Electroluminescence of In0.53Ga0.47As/GaAs0.5Sb0.5 type II multiple quantum well diodes lattice-matched to InP

      JOURNAL OF CRYSTAL GROWTH
    67. Asahi, H; Konishi, K; Maeda, O; Ayabe, A; Lee, HJ; Mizobata, A; Asami, K; Gonda, S
      Gas source MBE growth of TlInGaAs/InP DH structures for the application toWDM optical fiber communication systems

      JOURNAL OF CRYSTAL GROWTH
    68. Saarinen, M; Xiang, N; Vilokkinen, V; Melanen, P; Orsila, S; Uusimaa, P; Savolainen, P; Toivonen, M; Pessa, M
      Red vertical-cavity surface-emitting lasers grown by solid-source molecular beam epitaxy

      JOURNAL OF CRYSTAL GROWTH
    69. Zhang, YG; Chen, JX; Chen, YQ; Qi, M; Li, AZ; Frojdh, K; Stoltz, B
      Characteristics of strain compensated 1.3 mu m InAsP/InGaAsP ridge waveguide laser diodes grown by gas source MBE

      JOURNAL OF CRYSTAL GROWTH
    70. Kuang, GK; Bohm, G; Grau, M; Rosel, G; Amann, MC
      Long wavelength InGaAs-InGaAlAs-InP lasers grown in MBE

      JOURNAL OF CRYSTAL GROWTH
    71. Orsila, S; Leinonen, T; Uusimaa, P; Saarinen, M; Guina, M; Sipila, P; Vilokkinen, V; Melanen, P; Dumitrescu, M; Pessa, M
      Resonant cavity light-emitting diodes grown by solid source MBE

      JOURNAL OF CRYSTAL GROWTH
    72. Kuo, JM; Wang, YC; Weiner, JS; Sivco, D; Cho, AY; Chen, YK
      High-performance planar Al0.48In0.52As/In0.53Ga0.47As high electron mobility transistors

      JOURNAL OF CRYSTAL GROWTH
    73. Kong, MY; Zhang, JP; Wang, XL; Sun, DZ
      Hydrogen behavior in GaN epilayers grown by NH3-MBE

      JOURNAL OF CRYSTAL GROWTH
    74. Gurusinghe, KKMN; Falth, F; Andersson, TG
      Limitations in MBE-grown GaN and AlGaN/GaN due to dislocations and lateralinhomogeneities

      JOURNAL OF CRYSTAL GROWTH
    75. Liu, HF; Chen, H; Wan, L; Li, ZQ; Huang, Q; Zhou, JM
      Epitaxial growth and characterization of GaN Films on (001) GaAs substrates by radio-frequency molecular beam epitaxy

      JOURNAL OF CRYSTAL GROWTH
    76. Kimura, R; Takahashi, K
      Investigation of the initial growth of cubic-GaN using an AlGaAs buffer layer grown on GaAs (100) by molecular beam epitaxy

      JOURNAL OF CRYSTAL GROWTH
    77. Qu, B; Zheng, XH; Wang, YT; Xu, DP; Lin, SM; Yang, H; Liang, JW
      Orientation relationship between hexagonal inclusions and cubic GaN grown on GaAs(001) substrates

      JOURNAL OF CRYSTAL GROWTH
    78. Yodo, T; Ando, H; Tsuchiya, H; Nosei, D; Shimeno, M; Harada, Y
      Influence of substrate nitridation before growth on initial growth processof GaN heteroepitaxial layers grown on Si(001) and Si(111) substrates by ECR-MBE

      JOURNAL OF CRYSTAL GROWTH
    79. Tampo, H; Asahi, H; Imanishi, Y; Hiroki, M; Ohnishi, K; Yamada, K; Asami, K; Gonda, S
      Growth of high-quality polycrystalline GaN on glass substrate by gas source molecular beam epitaxy

      JOURNAL OF CRYSTAL GROWTH
    80. Shen, XQ; Ide, T; Cho, SH; Shimizu, M; Okumura, H; Sonoda, S; Shimizu, S
      Growth and characterizations of AlGaN/GaN heterostructures using multi-AlNbuffer layers in plasma-assisted molecular beam epitaxy

      JOURNAL OF CRYSTAL GROWTH
    81. Ebling, DG; Kirste, L; Benz, KW; Teofilov, N; Thonke, K; Sauer, R
      Optical properties and ordering of AlxGa1-xN MBE-layers

      JOURNAL OF CRYSTAL GROWTH
    82. Kitamura, T; Cho, SH; Ishida, Y; Ide, T; Shen, XQ; Nakanishi, H; Chichibu, S; Okumura, H
      Growth and characterization of cubic InGaN epilayers on 3C-SiC by RF MBE

      JOURNAL OF CRYSTAL GROWTH
    83. Foxon, CT; Novikov, SV; Campion, RP; Davis, CS; Cheng, TS; Winser, AJ; Harrison, I
      Growth of GaNAs films by molecular beam epitaxy

      JOURNAL OF CRYSTAL GROWTH
    84. Noda, T; Koshiba, S; Nagamune, Y; Sakaki, H
      Structural and optical properties of MBE grown GaNAs/GaAs quantum well structures

      JOURNAL OF CRYSTAL GROWTH
    85. Kitatani, T; Kondow, M; Tanaka, T
      Molecular beam epitaxy of GaInNAs by using solid source arsenic

      JOURNAL OF CRYSTAL GROWTH
    86. Li, W; Turpeinen, J; Melanen, P; Savolainen, P; Uusimaa, P; Pessa, M
      Strain-compensated GaInNAs/GaAsP/GaAs/GaInP quantum well lasers grown by gas-source molecular beam epitaxy

      JOURNAL OF CRYSTAL GROWTH
    87. Harmand, JC; Ungaro, G; Ramos, J; Rao, EVK; Saint-Girons, G; Teissier, R; Le Roux, G; Largeau, L; Patriarche, G
      Investigations on GaAsSbN/GaAs quantum wells for 1.3-1.55 mu m emission

      JOURNAL OF CRYSTAL GROWTH
    88. Xin, HP; Welty, RJ; Hong, YG; Tu, CW
      Gas-source MBE growth of Ga(In)NP/GaP structures and their applications for red light-emitting diodes

      JOURNAL OF CRYSTAL GROWTH
    89. Prevot, I; Marcadet, X; Durand, O; Bisaro, R; Bouchier, A; Julien, FH
      Characterisation and optimisation of MBE grown arsenide/antimonide interfaces

      JOURNAL OF CRYSTAL GROWTH
    90. Mozume, T; Georgiev, N; Yoshida, H
      Dopant-induced interface disorder in InGaAs/AlAsSb heterostructures lattice matched to InP grown by molecular beam epitaxy

      JOURNAL OF CRYSTAL GROWTH
    91. Wilk, A; Fraisse, B; Christol, P; Boissier, G; Grech, P; El Gazouli, M; Rouillard, Y; Baranov, AN; Joullie, A
      MBE growth of InAs/InAsSb/InAlAsSb "W" quantum well laser diodes emitting near 3 mu m

      JOURNAL OF CRYSTAL GROWTH
    92. Simanowski, S; Mermelstein, C; Walther, M; Herres, N; Kiefer, R; Rattunde, M; Schmitz, J; Wagner, J; Weimann, G
      Growth and layer structure optimization of 2.26 mu m (AlGaIn)(AsSb) diode lasers for room temperature operation

      JOURNAL OF CRYSTAL GROWTH
    93. Li, X; Heber, J; Pullin, M; Gevaux, D; Phillips, CC
      MBE growth of mid-infrared antimonide LEDs with strained electron barriers

      JOURNAL OF CRYSTAL GROWTH
    94. Marcadet, X; Rakovska, A; Prevot, I; Glastre, G; Vinter, B; Berger, V
      MBE growth of room-temperature InAsSb mid-infrared detectors

      JOURNAL OF CRYSTAL GROWTH
    95. Zhou, YK; Asahi, H; Okumura, S; Kanamura, M; Asakura, J; Asami, K; Nakajima, M; Harima, H; Gonda, S
      Growth and characterization of InMnAsSb for the sensor-memory device application at long wavelength region

      JOURNAL OF CRYSTAL GROWTH
    96. Tanaka, M; Mishima, Y
      Low temperature molecular beam epitaxy growth and properties of(Ca, Er)As

      JOURNAL OF CRYSTAL GROWTH
    97. Jensen, JR; Hvam, JM; Langbein, W
      Enhanced confinement energy in strained asymmetric T-shaped quantum wires

      JOURNAL OF CRYSTAL GROWTH
    98. Ohno, Y; Nitta, T; Shimomura, S; Hiyamizu, S
      Stacking effect of self-organized In0.15Ga0.85As quantum wires grown on (775)B-oriented GaAs substrates by molecular beam epitaxy

      JOURNAL OF CRYSTAL GROWTH
    99. Garcia, JM; Gonzalez, L; Gonzalez, MU; Silveira, JP; Gonzalez, Y; Briones, F
      InAs/InP(001) quantum wire formation due to anisotropic stress relaxation:in situ stress measurements

      JOURNAL OF CRYSTAL GROWTH
    100. Silveira, JP; Garcia, JM; Briones, F
      Surface stress effects during MBE growth of III-V semiconductor nanostructures

      JOURNAL OF CRYSTAL GROWTH


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Documento generato il 31/10/20 alle ore 10:34:42