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La ricerca find articoli where soggetti phrase all words 'quantum-well lasers' sort by level,fasc_key/DESCEND, pagina_ini_num/ASCEND ha restituito 812 riferimenti
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    1. May, RD; Forouhar, S; Crisp, D; Woodward, WS; Paige, DA; Pathare, A; Boynton, WV
      The MVACS tunable diode laser spectrometers

      JOURNAL OF GEOPHYSICAL RESEARCH-PLANETS
    2. Bradshaw, JL; Pham, JT; Yang, RQ; Bruno, JD; Wortman, DE
      Enhanced CW performance of the interband cascade laser using improved device fabrication

      IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
    3. Fischer, MO; Reinhardt, M; Forchel, A
      Room-temperature operation of GaInAsN-GaAs laser diodes in the 1.5-mu m range

      IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
    4. Inaba, Y; Nakayama, H; Kito, M; Ishino, M; Itoh, K
      High-power 1.55-mu m mass-transport-grating DFB lasers for externally modulated systems

      IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
    5. Lee, SL
      Analytical formula of wavelength-dependent transparent current and its implications for designing wavelength sensors and WDM lasers

      IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
    6. Selmic, SR; Chou, TM; Sih, JP; Kirk, JB; Mantie, A; Butler, JK; Bour, D; Evans, GA
      Design and characterization of 1.3-mu m AlGaInAs-InP multiple-quantum-welllasers

      IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
    7. Shimada, N; Fukumoto, Y; Uemukai, M; Suhara, T; Nishihara, H; Larsson, A
      Monolithic integration of laser and passive elements using selective QW disordering by RTA with SiO2 caps of different thicknesses

      IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
    8. Shimizu, H; Kumada, K; Uchiyama, S; Kasukawa, A
      High-performance CW 1.26-mu m GaInNAsSb-SQW ridge lasers

      IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
    9. Zegrya, GG; Pikhtin, NA; Skrynnikov, GV; Slipchenko, SO; Tarasov, IS
      Threshold characteristics of lambda=1.55 mu m InGaAsP/InP heterolasers

      SEMICONDUCTORS
    10. Travagnin, M
      Effects of Pauli blocking on semiconductor laser intensity and phase noisespectra - art. no. 013818

      PHYSICAL REVIEW A
    11. Quochi, F; Kilper, DC; Cunningham, JE; Dinu, M; Shah, J
      Continuous-wave operation of a 1.3-mu m GaAsSb-GaAs quantum-well vertical-cavity surface-emitting laser at room temperature

      IEEE PHOTONICS TECHNOLOGY LETTERS
    12. White, JK; Blaauw, C; Firth, P; Aukland, P
      85 degrees C investigation of uncooled 10-Gb/s directly modulated InGaAsP RWG GC-DFB lasers

      IEEE PHOTONICS TECHNOLOGY LETTERS
    13. Koonath, P; Kim, S; Cho, WJ; Gopinath, A
      Polarization-insensitive optical amplifiers in AlInGaAs

      IEEE PHOTONICS TECHNOLOGY LETTERS
    14. Bleuel, T; Muller, M; Forchel, A
      2-mu m GaInSb-AlGaAsSb distributed-feedback lasers

      IEEE PHOTONICS TECHNOLOGY LETTERS
    15. Serries, D; Peter, M; Kiefer, R; Winkler, K; Wagner, J
      Improved performance of 2-mu m GaInAs strained quantum-well lasers on InP by increasing carrier confinement

      IEEE PHOTONICS TECHNOLOGY LETTERS
    16. Liu, G; Jin, X; Chuang, SL
      Measurement of linewidth enhancement factor of semiconductor lasers using an injection-locking technique

      IEEE PHOTONICS TECHNOLOGY LETTERS
    17. Kuang, GK; Bohm, G; Graf, N; Grau, M; Rosel, G; Meyer, R; Amann, MC
      High-temperature performance of InGaAs-InGaAlAs-InP 1.79-mu m diode lasersgrown in solid-source molecular-beam epitaxy

      IEEE PHOTONICS TECHNOLOGY LETTERS
    18. Tansu, N; Mawst, LJ
      High-performance strain-compensated InGaAs-GaAsP-GaAs (lambda=1.17 mu m) quantum-well diode lasers

      IEEE PHOTONICS TECHNOLOGY LETTERS
    19. Hall, E; Nakagawa, S; Almuneau, G; Kim, JK; Coldren, LA
      Selectively etched undercut apertures in AlAsSb-based VCSELs

      IEEE PHOTONICS TECHNOLOGY LETTERS
    20. Sumpf, B; Beister, G; Erbert, G; Fricke, J; Knauer, A; Pittroff, W; Ressel, P; Sebastian, J; Wenzel, H; Trankle, G
      Tensile-strained GaAsP-AlGaAs laser diodes for reliable 1,2-W continuous-wave operation at 735 nm

      IEEE PHOTONICS TECHNOLOGY LETTERS
    21. Liang, BL; Jiang, CP; Xia, GQ; Fan, SP; Chu, JH
      Investigation of long-wavelength optical-phonons in GaxIn1-xAsySb1-y quaternary mixed crystal by Raman scattering spectroscopies and FIR reflection spectra

      JOURNAL OF INFRARED AND MILLIMETER WAVES
    22. Dong, RF; Zhang, JX; Zhang, TC; Zhang, J; Xie, CD; Peng, KC
      Intensity noise squeezing of laser diode with inphase external weak feedback by half wave plate

      ACTA PHYSICA SINICA
    23. Mereuta, A; Saint-Girons, G; Bouchoule, S; Sagnes, I; Alexandre, F; Le Roux, G; Decobert, J; Ougazzaden, A
      (InGa)(NAs)/GaAs structures emitting in 1-1.6 mu m wavelength range

      OPTICAL MATERIALS
    24. Usami, M; Matsushima, Y; Horie, H; Kaneda, H
      Highly reliable and high power 980 nm pump laser diode module for underseacable systems

      IEICE TRANSACTIONS ON ELECTRONICS
    25. Usami, M; Matsushima, Y; Horie, H; Kaneda, H
      Highly reliable and high power 980 nm pump laser diode module for underseacable systems

      IEICE TRANSACTIONS ON COMMUNICATIONS
    26. Potter, R; Mazzucato, S; Balkan, N; Adams, MJ; Chalker, PR; Joyce, TB; Bullough, TJ
      The effect of In/N ratio on the optical quality and lasing threshold in GaxIn1-xAs1-yNy/GaAs laser structures

      SUPERLATTICES AND MICROSTRUCTURES
    27. Zhang, J; Zhang, TC; Dong, RF; Zhang, JX; Wang, JM; Xie, CD; Peng, KC
      Influence of birefringence induced at low temperature on balanced detection of polarization-dependent photon-number squeezing and its optical compensation

      JOURNAL OF THE OPTICAL SOCIETY OF AMERICA B-OPTICAL PHYSICS
    28. Koprulu, KG; Aytur, O
      Analysis of the generation of amplitude-squeezed light with Gaussian-beam degenerate optical parametric amplifiers

      JOURNAL OF THE OPTICAL SOCIETY OF AMERICA B-OPTICAL PHYSICS
    29. Armenise, MN; Passaro, VMN; De Leonardis, F; Armenise, M
      Modeling and design of a novel miniaturized integrated optical sensor for gyroscope systems

      JOURNAL OF LIGHTWAVE TECHNOLOGY
    30. Yin, JP; Wang, YZ; Xiao, M; Wang, YQ
      A new semiclassical model to analyze sub-Poissonian light in high-impedance-driven semiconductor light emitters

      PHYSICS LETTERS A
    31. Arahira, S; Katoh, Y; Ogawa, Y
      Generation and stabilization of ultrafast optical pulse trains with monolithic mode-locked laser diodes

      OPTICAL AND QUANTUM ELECTRONICS
    32. Ma, CS; Wang, LJ; Liu, SY
      Band structures and characteristics of InGaAs/InGaAsP strain-compensated quantum well lasers

      OPTICAL AND QUANTUM ELECTRONICS
    33. Zhang, Y; Wang, XQ; Chen, WY; Bai, XD; Liu, CX; Yang, SR; Liu, SY
      Analysis of room temperature PL spectra of InAs/GaAs/InP and InAs/InP self-assembled QDs: A five-band study

      OPTICAL AND QUANTUM ELECTRONICS
    34. Usami, N; Azuma, Y; Ujihara, T; Sazaki, G; Nakajima, K; Yakabe, Y; Kondo, T; Kawaguchi, K; Koh, S; Shiraki, Y; Zhang, BP; Segawa, Y; Kodama, S
      Molecular beam epitaxy of GaAs on nearly lattice-matched SiGe substrates grown by the multicomponent zone-melting method

      SEMICONDUCTOR SCIENCE AND TECHNOLOGY
    35. Nawaz, M; Permthammasin, K
      A design analysis of a GaInP/GaInAs/GaAs-based 980 nm Al-free pump laser using self-consistent numerical simulation

      SEMICONDUCTOR SCIENCE AND TECHNOLOGY
    36. Matavulj, PS; Radunovic, JB
      Real single quantum well laser frequency response

      INTERNATIONAL JOURNAL OF INFRARED AND MILLIMETER WAVES
    37. Mil'shtein, S; Thurkins, E; Merritt, N; Novaris, K; Therrien, J
      Sectional voltage contrast topography of quantum well diodes

      SCANNING
    38. Ho, CH; Hsieh, CH; Chen, YJ; Huang, YS; Tiong, KK
      Novel electronic design for double-modulation spectroscopy of semiconductor and semiconductor microstructures

      REVIEW OF SCIENTIFIC INSTRUMENTS
    39. Wang, SM; Zhao, DM; Lu, ZD; Zhou, GQ; Huang, FQ; Xu, JX
      Demonstrations for optical beam qualities of quantum well lasers

      OPTICS COMMUNICATIONS
    40. Taylor, GW; Huo, Y; Shao, J
      A new model for semiconductor laser high frequency performance based on Fermi energies

      OPTICS COMMUNICATIONS
    41. Czyszanowski, T; Nakwaski, W
      Mode transformation enhanced in nitride diode lasers by modification of their buffer layers

      JOURNAL OF PHYSICS D-APPLIED PHYSICS
    42. Mackowiak, P; Nakwaski, W
      Some aspects of designing an efficient nitride VCSEL resonator

      JOURNAL OF PHYSICS D-APPLIED PHYSICS
    43. Mayer, B; Reithmaier, JP; Forchel, A
      Tertiarybutylarsine (TBAs) and -phosphine (TBP) as group V-precursors for gas source molecular beam epitaxy for optoelectronic applications

      JOURNAL OF CRYSTAL GROWTH
    44. Zhang, YG; Chen, JX; Chen, YQ; Qi, M; Li, AZ; Frojdh, K; Stoltz, B
      Characteristics of strain compensated 1.3 mu m InAsP/InGaAsP ridge waveguide laser diodes grown by gas source MBE

      JOURNAL OF CRYSTAL GROWTH
    45. Kuang, GK; Bohm, G; Grau, M; Rosel, G; Amann, MC
      Long wavelength InGaAs-InGaAlAs-InP lasers grown in MBE

      JOURNAL OF CRYSTAL GROWTH
    46. Spruytte, SG; Larson, MC; Wampler, W; Coldren, CW; Petersen, HE; Harris, JS
      Nitrogen incorporation in group III-nitride-arsenide materials grown by elemental source molecular beam epitaxy

      JOURNAL OF CRYSTAL GROWTH
    47. Zhang, YG; Li, AZ; Zheng, YL; Lin, C; Jian, GZ
      MBE grown 2.0 mu m InGaAsSb/AlGaAsSb MQW ridge waveguide laser diodes

      JOURNAL OF CRYSTAL GROWTH
    48. Azuma, Y; Usami, N; Ujihara, T; Sazaki, G; Murakami, Y; Miyashita, S; Fujiwara, K; Nakajima, K
      Growth of SiGe bulk crystal with uniform composition by directly controlling the growth temperature at the crystal-melt inter-face using in situ monitoring system

      JOURNAL OF CRYSTAL GROWTH
    49. Williams, BS; Hu, Q
      Optimized energy separation for phonon scattering in three-level terahertzintersubband lasers

      JOURNAL OF APPLIED PHYSICS
    50. Olesberg, JT; Flatte, ME; Hasenberg, TC; Grein, CH
      Mid-infrared InAs/GaInSb separate confinement heterostructure laser diode structures

      JOURNAL OF APPLIED PHYSICS
    51. Johnston, AH
      Proton displacement damage in light-emitting and laser diodes

      IEEE TRANSACTIONS ON NUCLEAR SCIENCE
    52. Chow, WW; Spahn, OB; Schneider, HC; Klem, JF
      Contributions to the large blue emission shift in a GaAsSb type-II laser

      IEEE JOURNAL OF QUANTUM ELECTRONICS
    53. Asryan, LV; Luryi, S
      Tunneling-injection quantum-dot laser: Ultrahigh temperature stability

      IEEE JOURNAL OF QUANTUM ELECTRONICS
    54. Zhang, YJ; Chen, WY; Wang, AJ; Jiang, H; Liu, CX; Liu, SY
      Design of the active structure of high-performance 1.55-mu m In1-x-yGayAlxAs strained MQW lasers

      IEEE JOURNAL OF QUANTUM ELECTRONICS
    55. Maximov, MV; Asryan, LV; Shernyakov, YM; Tsatsul'nikov, AF; Kaiander, IN; Nikolaev, VV; Kovsh, AR; Mikhrin, SS; Ustinov, VM; Zhukov, AE; Alferov, ZI; Ledenstov, NN; Bimberg, D
      Gain and threshold characteristics of long wavelength lasers based on InAs/GaAs quantum dots formed by activated alloy phase separation

      IEEE JOURNAL OF QUANTUM ELECTRONICS
    56. Asryan, LV; Grundmann, M; Ledentsov, NN; Stier, O; Suris, RA; Bimberg, D
      Effect of excited-state transitions on the threshold characteristics of a quantum dot laser

      IEEE JOURNAL OF QUANTUM ELECTRONICS
    57. Wu, LZ
      Spectra of gain, absolute refractive index, and wave-guide confinement factor of strained single quantum-well GaInP laser from spontaneous emission

      IEEE JOURNAL OF QUANTUM ELECTRONICS
    58. Flory, CA; Hasnain, G
      Modeling of GaN optoelectronic devices and strain-induced piezoelectric effects

      IEEE JOURNAL OF QUANTUM ELECTRONICS
    59. Chow, WW; Amano, H
      Analysis of lateral-mode behavior in broad-area InGaN quantum-well lasers

      IEEE JOURNAL OF QUANTUM ELECTRONICS
    60. Yang, RQ; Bradshaw, JL; Bruno, JD; Pham, JT; Wortman, DE
      Power, efficiency, and thermal characteristics of type-II interband cascade lasers

      IEEE JOURNAL OF QUANTUM ELECTRONICS
    61. Stohs, J; Bossert, DJ; Gallant, DJ; Brueck, SRJ
      Gain, refractive index change, and linewidth enhancement factor in broad-area GaAs and InGaAs quantum-well lasers

      IEEE JOURNAL OF QUANTUM ELECTRONICS
    62. Liu, G; Chuang, SL
      High-speed modulation of long-wavelength In1-xGaxAsyP1-y and In1-x-yGaxAlyAs strained quantum-well lasers

      IEEE JOURNAL OF QUANTUM ELECTRONICS
    63. Tomic, S; Milanovic, V; Ikonic, Z
      Gain optimization in optically pumped AlGaAs unipolar quantum-well lasers

      IEEE JOURNAL OF QUANTUM ELECTRONICS
    64. Kastalsky, A; Vorobjev, LE; Firsov, DA; Zerova, VL; Towe, E
      A dual-color injection laser based on intra- and inter-band carrier transitions in semiconductor quantum wells or quantum dots

      IEEE JOURNAL OF QUANTUM ELECTRONICS
    65. Hermier, JP; Bramati, A; Khoury, AZ; Josse, V; Giacobino, E; Schnitzer, P; Michalzik, R; Ebeling, KJ
      Noise characteristics of oxide-confined vertical-cavity surface-emitting lasers

      IEEE JOURNAL OF QUANTUM ELECTRONICS
    66. Hamp, MJ; Cassidy, DT
      Experimental and theoretical analysis of the carrier distribution in asymmetric multiple quantum-well InGaAsP lasers

      IEEE JOURNAL OF QUANTUM ELECTRONICS
    67. Sumpf, B; Beister, G; Erbert, G; Fricke, J; Knauer, A; Pittroff, W; Ressel, P; Sebastian, J; Wenzel, H; Trankle, G
      2W reliable operation of lambda=735nm GaAsP/AlGaAs laser diodes

      ELECTRONICS LETTERS
    68. Wenzel, H; Bugge, F; Erbert, G; Hulsewede, R; Staske, R; Trankle, G
      High-power diode lasers with small vertical beam divergence emitting at 808 nm

      ELECTRONICS LETTERS
    69. Arahira, S; Ogawa, Y
      Transform-limited 480 GHz colliding-pulse modelocked laser diode

      ELECTRONICS LETTERS
    70. di Sopra, FM; Gauggel, HP; Brunner, M; Hovel, R; Moser, M; Zappe, HP
      Long-term spectral stability of singlemode VCSELs

      ELECTRONICS LETTERS
    71. Shimizu, H; Kumada, K; Uchiyama, S; Kasukawa, A
      Extremely large differential gain of 1.26 mu m GaInNAsSb-SQW ridge lasers

      ELECTRONICS LETTERS
    72. Liu, HC; Cheung, IW; SpringThorpe, AJ; Dharma-wardana, C; Wasilewski, ZR; Lockwood, DJ; Aers, GC
      Intersubband Raman laser

      APPLIED PHYSICS LETTERS
    73. Hofmann, M; Wagner, A; Ellmers, C; Schlichenmeier, C; Schafer, S; Hohnsdorf, F; Koch, J; Stolz, W; Koch, SW; Ruhle, WW; Hader, J; Moloney, JV; O'Reilly, EP; Borchert, B; Egorov, AY; Riechert, H
      Gain spectra of (GaIn)(NAs) laser diodes for the 1.3-mu m-wavelength regime

      APPLIED PHYSICS LETTERS
    74. Usami, N; Azuma, Y; Ujihara, T; Sazaki, G; Miyashita, S; Murakami, Y; Nakajima, K
      Growth of SixGe1-x (x=0.15) bulk crystal with uniform composition utilizing in situ monitoring of the crystal-solution interface

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    75. Shiao, HP; Lee, HY; Lin, YJ; Tu, YK; Lee, CT
      Growth and performance study of aluminum-free InGaAs/GaAs/InGaAsP strainedquantum-well pump lasers

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    76. Avrutin, EA; Marsh, JH; Portnoi, EL
      Monolithic and multi-GigaHertz mode-locked semiconductor lasers: Constructions, experiments, models and applications

      IEE PROCEEDINGS-OPTOELECTRONICS
    77. Afonenko, AA; Manak, IS; Shore, KA
      Effect of detuned DBRs on modal gain in VCSELs

      IEE PROCEEDINGS-OPTOELECTRONICS
    78. Dupuis, RD
      III-V semiconductor heterojunction devices grown by metalorganic chemical vapor deposition

      IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
    79. Iga, K
      Surface-emitting laser - Its birth and generation of new optoelectronics field

      IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
    80. Suematsu, Y; Arai, S
      Single-mode semiconductor lasers for long-wavelength optical fiber communications and dynamics of semiconductor lasers

      IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
    81. Yang, GW; Hwu, RJ; Xu, ZT; Ma, XY
      Design consideration and performance of high-power and high-brightness InGaAs-InGaAsP-AlGaAs quantum-well diode lasers (lambda=0.98 mu m)

      IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
    82. Ledentsov, NN; Grundmann, M; Heinrichsdorff, F; Bimberg, D; Ustinov, VM; Zhukov, AE; Maximov, MV; Alferov, ZI; Lott, JA
      Quantum-dot heterostructure lasers

      IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
    83. Shaw, MJ; Corbin, EA; Kitchin, MR; Hagon, JP; Jaros, M
      Quantitative theory of scattering in antimonide-based heterostructures with imperfect interfaces

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    84. Coldren, CW; Spruytte, SG; Harris, JS; Larson, MC
      Group III nitride-arsenide long wavelength lasers grown by elemental source molecular beam epitaxy

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    85. Morozov, YA
      Transformation of the spectral density of intensity fluctuations of the pulsed radiation from a quasi-single-mode heterolaser in an optical fiber

      TECHNICAL PHYSICS
    86. Kozlovskii, AV
      Spectra of intensity fluctuations in output radiation of an incoherently bumped multimode three-level laser

      LASER PHYSICS
    87. Bramati, A; Hermier, JP; Jost, V; Giacobino, E
      Feedback control and nonlinear intensity noise of Nd : YVO4 microchip lasers - art. no. 043806

      PHYSICAL REVIEW A
    88. Mullane, MP; McInerney, JG
      Minimization of the linewidth enhancement factor in tensile-strained quantum-well lasers

      IEEE PHOTONICS TECHNOLOGY LETTERS
    89. Mason, B; Barton, J; Fish, GA; Coldren, LA; DenBaars, SP
      Design of sampled grating DBR lasers with integrated semiconductor opticalamplifiers

      IEEE PHOTONICS TECHNOLOGY LETTERS
    90. Yamada, M; Anan, T; Tokutome, K; Kamei, A; Nishi, K; Sugou, S
      Low-threshold operation of 1.3-mu m GaAsSb quantum-well lasers directly grown on GaAs substrates

      IEEE PHOTONICS TECHNOLOGY LETTERS
    91. Tansu, N; Zhou, D; Mawst, LJ
      Low-temperature sensitive, compressively strained InGaAsP active (lambda=0.78-0.85 mu m) region diode lasers

      IEEE PHOTONICS TECHNOLOGY LETTERS
    92. Takemasa, K; Kubota, M; Wada, H
      1.3-mu m AlGaInAs-InP buried-heterostructure lasers with mode profile converter

      IEEE PHOTONICS TECHNOLOGY LETTERS
    93. Bewley, WW; Felix, CL; Vurgaftman, I; Stokes, DW; Meyer, JR; Lee, H; Martinelli, RU
      Optical-pumping injection cavity (OPIC) Mid-IR "W" lasers with high efficiency and low loss

      IEEE PHOTONICS TECHNOLOGY LETTERS
    94. Madhan, MG; Vaya, PR; Gunasekaran, N
      Effect of source and load resistance on the performance of bistable lasers

      IEEE PHOTONICS TECHNOLOGY LETTERS
    95. Legge, M; Bacher, G; Bader, S; Forchel, A; Lugauer, HJ; Waag, A; Landwehr, G
      Strongly index-guided II-VI laser diodes

      IEEE PHOTONICS TECHNOLOGY LETTERS
    96. Paoletti, R; Bertone, D; Fang, R; Magnetti, G; Meliga, M; Meneghini, G; Morello, G; Rossi, G; Tallone, L; Scofet, M
      1.55-mu m optical short pulse generation at 10-GHz repetition rate, using a mode-locked hybrid distributed Bragg reflector (ML-HDBR) laser source

      IEEE PHOTONICS TECHNOLOGY LETTERS
    97. Han, IK; Cho, SH; Heim, PJS; Woo, DH; Kim, SH; Song, JH; Johnson, FG; Dagenais, M
      Dependence of the light-current characteristics of 1.55-mu m broad-area lasers on different p-doping profiles

      IEEE PHOTONICS TECHNOLOGY LETTERS
    98. Koyama, F; Schlenker, D; Miyamoto, T; Chen, Z; Matsutani, A; Sakaguchi, T; Iga, K
      Data transmission over single-mode fiber by using 1.2-mu m uncooled GaInAs-GaAs laser for Gb/s local area network

      IEEE PHOTONICS TECHNOLOGY LETTERS
    99. Yang, X; Heroux, JB; Jurkovic, MJ; Wang, WI
      Low-threshold 1.3-mu m InGaAsN : Sb-GaAs single-quantum-well lasers grown by molecular beam epitaxy

      IEEE PHOTONICS TECHNOLOGY LETTERS
    100. Gokhale, MR; Studenkov, PV; Wei, J; Forrest, SR
      Low-threshold current, high-efficiency 1.3-mu m wavelength aluminum-free InGaAsN-based quantum-well lasers

      IEEE PHOTONICS TECHNOLOGY LETTERS


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Documento generato il 21/10/20 alle ore 19:23:07