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La ricerca find articoli where soggetti phrase all words 'plasma CVD' sort by level,fasc_key/DESCEND, pagina_ini_num/ASCEND ha restituito 373 riferimenti
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    1. Kato, I; Sagisaka, M; Sugai, T; Kamigaichi, T
      Quality of a-Si : H/Si3N4 multilayer films fabricated by double tubed coaxial line type MPCVD system and application of the films to optical circuit element

      ELECTRONICS AND COMMUNICATIONS IN JAPAN PART II-ELECTRONICS
    2. Okajima, K; Sakumoto, N; Toya, T; Sudoh, M
      Evaluation of metal-loaded activated carbon electrode for electrochemical capacitor prepared by plasma CVD method

      ELECTROCHEMISTRY
    3. Vandenbulcke, L; De Barros, MI
      Mechanical applications of diamond layers

      VIDE-SCIENCE TECHNIQUE ET APPLICATIONS
    4. Sharma, RK; Kumar, A; Anthony, JM
      Advances in high-k dielectric gate materials for future ULSI devices

      JOM-JOURNAL OF THE MINERALS METALS & MATERIALS SOCIETY
    5. Kikkawa, S
      Soft chemistry and its application for new layered compounds

      SOFT CHEMISTRY LEADING TO NOVEL MATERIALS
    6. Matsumoto, Y; Melendez, F; Asomoza, R
      Performance of p-type silicon-oxide windows in amorphous silicon solar cell

      SOLAR ENERGY MATERIALS AND SOLAR CELLS
    7. Isomura, M; Kondo, M; Matsuda, A
      High-pressure plasma CVD for high-quality amorphous silicon

      SOLAR ENERGY MATERIALS AND SOLAR CELLS
    8. Takami, T; Mine, T; Kusunoki, I; Nishitani-Gamo, M; Ando, T
      Unusual RHEED patterns of a homoepitaxial diamond (001) surface explained by surface tilt

      DIAMOND AND RELATED MATERIALS
    9. Tang, W; Liu, J; Huang, T; Lu, F
      Preparation of diamond wafers by DC arcjet plasma process under a gas recycling mode

      DIAMOND AND RELATED MATERIALS
    10. Lee, JK; Baik, YJ; Eui, KY; Park, JW
      Properties of diamond films deposited by multi-cathode direct current plasma assisted CVD method

      DIAMOND AND RELATED MATERIALS
    11. Mutsukura, N
      Photoluminescence and infra-red absorption of annealed a-CNx : H films

      DIAMOND AND RELATED MATERIALS
    12. Sachdev, H; Scheid, P
      Formation of silicon carbide and silicon carbonitride by RF-plasma CVD

      DIAMOND AND RELATED MATERIALS
    13. Suzuki, K; Fukuda, H; Yamada, T; Sawabe, A
      Epitaxially grown free-standing diamond platelet

      DIAMOND AND RELATED MATERIALS
    14. Yu, J; Zhang, Q; Ahn, J; Yoon, SF; Rusli; Li, YJ; Gan, B; Chew, K; Tan, KH
      Field emission from patterned carbon nanotube emitters produced by microwave plasma chemical vapor deposition

      DIAMOND AND RELATED MATERIALS
    15. Lee, WS; Chae, KW; Eun, KY; Baik, YJ
      Generation of pulsed direct-current plasma above 100 torr for large area diamond deposition

      DIAMOND AND RELATED MATERIALS
    16. Ikeda, S; Kouduma, Y; Nagano, M
      Bias enhanced nucleation of diamond films on palladium substrate

      JOURNAL OF THE CERAMIC SOCIETY OF JAPAN
    17. Kondo, K; Ohgishi, A; Tanaka, Z
      Transparent conductive ZnO thin films prepared by plasma-enhanced CVD: Effect of aluminum dopant

      KAGAKU KOGAKU RONBUNSHU
    18. Endo, E; Yasuda, T; Yamaura, K; Kita, A; Sekai, K
      LiNiO2 electrode modified by plasma chemical vapor deposition for higher voltage performance

      JOURNAL OF POWER SOURCES
    19. Erdemir, A
      The role of hydrogen in tribological properties of diamond-like carbon films

      SURFACE & COATINGS TECHNOLOGY
    20. Teshima, K; Inoue, Y; Sugimura, H; Takai, O
      Room-temperature deposition of high-purity silicon oxide films by RF plasma-enhanced CVD

      SURFACE & COATINGS TECHNOLOGY
    21. Karches, M; von Rohr, PR
      Microwave plasma characteristics of a circulating fluidized bed-plasma reactor for coating of powders

      SURFACE & COATINGS TECHNOLOGY
    22. Takeuchi, Y; Mashima, H; Murata, M; Uchino, S; Kawai, Y
      Characteristics of VHF-excited SiH4 plasmas using a ladder-shaped electrode

      SURFACE & COATINGS TECHNOLOGY
    23. Kaneko, T; Miyakawa, N; Sone, H; Yamazakia, H
      The growth process and optical emission spectroscopy of amorphous silicon carbide films from methyltrichlorosilane by rf plasma enhanced CVD

      SURFACE & COATINGS TECHNOLOGY
    24. Itagaki, N; Ueda, Y; Ishii, N; Kawai, Y
      Production of low electron temperature ECR plasma for thin film deposition

      SURFACE & COATINGS TECHNOLOGY
    25. Wohle, J; Gebauer-Teichmann, A; Rie, KT
      Comparison of radio frequency and pulsed-d.c. plasma CVD of Ti-C-N-H and Zr-C-N-H layers at low temperature

      SURFACE & COATINGS TECHNOLOGY
    26. Deuerler, F; Gruner, H; Pohl, M; Tikana, L
      Wear mechanisms of diamond-coated tools

      SURFACE & COATINGS TECHNOLOGY
    27. Suchaneck, G; Norkus, V; Gerlach, G
      Low-temperature PECVD-deposited silicon nitride thin films for sensor applications

      SURFACE & COATINGS TECHNOLOGY
    28. Liao, KJ; Wang, WL; Kong, CY
      Study on microstructure and semiconducting properties of doped c-BN-containing films

      SURFACE & COATINGS TECHNOLOGY
    29. Cheng, Z; Peng, HR; Xie, GW; Shi, YL
      Annealing studies of TiN films deposited by plasma-assisted CVD

      SURFACE & COATINGS TECHNOLOGY
    30. Okuji, S; Sakudo, N; Hayashi, K; Okada, M; Onogawa, T; Maesaka, T; Nishiyama, Y; Komatsu, K; Toyoda, K; Yashima, S; Ishida, T; Awazu, K
      Spatial distributions of ion-species in a large-volume inductively coupledplasma source

      SURFACE & COATINGS TECHNOLOGY
    31. Kuo, CT; Wu, JY; Lin, CH; Lu, TR; Sung, CM
      Internal stresses and microstructures of commercial thick diamond films deposited by different deposition methods

      MATERIALS CHEMISTRY AND PHYSICS
    32. Lin, CR; Wang, TJ; Chen, KC; Chang, CH
      Nano-tip diamond-like carbon fabrication utilizing plasma sheath potentialdrop technique

      MATERIALS CHEMISTRY AND PHYSICS
    33. Chen, MR; Chang, L; Chang, DF; Chen, HG
      Diamond growth onCoSi(2)/Si by bias-enhanced microwave plasma chemical vapor deposition method

      MATERIALS CHEMISTRY AND PHYSICS
    34. Hiraki, A
      Electron-emitter fabricated at low temperature by diamond-nano-seeding technique

      MATERIALS CHEMISTRY AND PHYSICS
    35. Huang, BR; Ke, WC; Hsu, JF; Chen, WK
      Successive current-voltage measurements of a thick isolated diamond film

      MATERIALS CHEMISTRY AND PHYSICS
    36. Kichambare, PD; Chen, LC; Wang, CT; Ma, KJ; Wu, CT; Chen, KH
      Laser irradiation of carbon nanotubes

      MATERIALS CHEMISTRY AND PHYSICS
    37. Chang, HL; Kuo, CT
      Properties of Si-C-N films prepared on Si substrate using cobalt interfacial layers

      MATERIALS CHEMISTRY AND PHYSICS
    38. Wu, JY; Kuo, CT; Yang, PJ
      Growth competition between crystalline silicon carbon nitrides and siliconnitrides deposited on Si wafer by MPCVD

      MATERIALS CHEMISTRY AND PHYSICS
    39. Kulinich, SA; Shibata, J; Yamamoto, H; Shimada, Y; Terashima, K; Yoshida, T
      Highly c-axis oriented LiNb0.5Ta0.5O3 thin films on Si substrates fabricated by thermal plasma spray CVD

      APPLIED SURFACE SCIENCE
    40. Yasui, K; Asada, K; Maeda, T; Akahane, T
      Growth of high quality silicon carbide films on Si by triode plasma CVD using monomethylsilane

      APPLIED SURFACE SCIENCE
    41. Hirakawa, N; Sonoda, S; Tanaka, C; Murakami, H; Yamakawa, H
      Electron emission properties of carbon nanotubes

      APPLIED SURFACE SCIENCE
    42. Brambilla, A; Tromson, D; Aboud, N; Mer, C; Bergonzo, P; Foulon, F
      CVD diamond gamma dose rate monitor for harsh environment

      NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT
    43. Kugler, C; Bauer, F; Laimer, J; Stori, H
      Is there a way to improve the uniformity of TiN deposition conditions in large pulsed d.c. plasma CVD reactors?

      VACUUM
    44. Sasaki, K
      Fundamental properties of ECR plasma CVD and hydrogen-induced low temperature Si epitaxy

      THIN SOLID FILMS
    45. Yamamoto, H; Kulinich, SA; Terashima, K
      LiNb1-xTaxO3 films prepared by thermal plasma spray CVD

      THIN SOLID FILMS
    46. Fujiyama, H; Maemura, Y; Yamaguchi, T
      Large-area uniform dust-free plasma CVD

      THIN SOLID FILMS
    47. Teshima, K; Inoue, Y; Sugimura, H; Takai, O
      Reduction of carbon impurities in silicon oxide films prepared by rf plasma-enhanced CVD

      THIN SOLID FILMS
    48. Takeuchi, Y; Kawasaki, I; Mashima, H; Murata, M; Kawai, Y
      Characteristics of VHF excited hydrogen plasmas using a ladder-shaped electrode

      THIN SOLID FILMS
    49. Watanabe, H; Itoh, K; Matsumoto, O
      Properties of V2O5 thin films deposited by means of plasma MOCVD

      THIN SOLID FILMS
    50. Kondo, M; Matsuda, A
      Low temperature growth of microcrystalline silicon and its application to solar cells

      THIN SOLID FILMS
    51. Koynov, S; Tzolov, M; Brogueira, P; Schwarz, R
      Closed-chamber CVD - a new method for preparation of group-IV thin films for large area electronics

      THIN SOLID FILMS
    52. Nakajima, A; Hashimoto, K; Watanabe, T
      Recent studies on super-hydrophobic films

      MONATSHEFTE FUR CHEMIE
    53. Gleskova, H; Wagner, S
      DC-gate-bias stressing of a-Si : H TFTs fabricated at 150 degrees C on polyimide foil

      IEEE TRANSACTIONS ON ELECTRON DEVICES
    54. Driessen, JPAM; Schoonman, J; Jensen, KF
      Infrared spectroscopic study of decomposition of Ti(N(CH3)(2))(4)

      JOURNAL OF THE ELECTROCHEMICAL SOCIETY
    55. Abe, K; Yagi, S; Okabayashi, T; Yamada, A; Konagai, M
      Characterization of tensile strained Si1-yCy alloy grown by photo- and plasma chemical vapor deposition at very low temperature

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    56. Shirahata, N; Kijima, K; Ma, XL; Ikuhara, Y
      Thermal change of unstable stacking faults in beta-SiC

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    57. Ohkawara, Y; Ohshio, S; Suzuki, T; Ito, H; Yatsui, K; Saitoh, H
      Dehydrogenation of nitrogen-containing carbon films by high-energy He2+ irradiation

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    58. Shirahata, N; Kijima, K; Ma, XL; Ikuhara, Y
      A new type of stacking fault in beta-SiC

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    59. Maruyama, K; Jacob, W; Roth, J
      Formation of hard amorphous hydrogenated carbon films with low hydrogen concentration and their erosion in air

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    60. Matsumoto, S; Zhang, WJ
      Synthesis of boron nitride films by microwave plasma chemical vapor deposition in fluorine-containing gases

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    61. Takada, T; Sasaki, K
      Selective epitaxial growth of Si thin films by ECR plasma CVD

      ELECTRONICS AND COMMUNICATIONS IN JAPAN PART II-ELECTRONICS
    62. Coulson, SR; Woodward, I; Badyal, JPS; Brewer, SA; Willis, C
      Super-repellent composite fluoropolymer surfaces

      JOURNAL OF PHYSICAL CHEMISTRY B
    63. Noda, M
      Formation of diamond films by pulsed discharge DC plasma CVD

      NEW DIAMOND AND FRONTIER CARBON TECHNOLOGY
    64. Takami, T; Kusunoki, I; Nishitani-Gamo, M; Ando, T
      Homoepitaxial diamond (001) thin film studied by reflection high-energy electron diffraction, contact atomic force microscopy, and scanning tunnelingmicroscopy

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    65. Chen, HC; Heberlein, J; Henne, R
      Integrated fabrication process for solid oxide fuel cells in a triple torch plasma reactor

      JOURNAL OF THERMAL SPRAY TECHNOLOGY
    66. Tachibana, T; Yokota, Y; Hayashi, K; Miyata, K; Kobashi, K; Shintani, Y
      Parametric study of bias-enhanced nucleation of diamond on platinum in microwave plasma

      DIAMOND AND RELATED MATERIALS
    67. Rodil, S; Morrison, NA; Milne, WI; Robertson, J; Stolojan, V; Jayawardane, DN
      Deposition of carbon nitride films using an electron cyclotron wave resonance plasma source

      DIAMOND AND RELATED MATERIALS
    68. Kim, KB; Kim, SH
      Characterization of boron nitride film synthesized by helicon wave plasma-assisted chemical vapor deposition

      DIAMOND AND RELATED MATERIALS
    69. Hwang, MS; Lee, C
      Effects of oxygen and nitrogen addition on the optical properties of diamond-like carbon films

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    70. Matsushita, M; Kashem, MA; Morita, S
      C-S thin films formed by plasma CVD

      IEICE TRANSACTIONS ON ELECTRONICS
    71. Yamamoto, T
      DLC films by plasma CVD

      JOURNAL OF JAPANESE SOCIETY OF TRIBOLOGISTS
    72. Miwa, M; Nakajima, A; Fujishima, A; Hashimoto, K; Watanabe, T
      Effects of the surface roughness on sliding angles of water droplets on superhydrophobic surfaces

      LANGMUIR
    73. Damasceno, JC; Camargo, SS; Freire, FL; Carius, R
      Deposition of Si-DLC films with high hardness, low stress and high deposition rates

      SURFACE & COATINGS TECHNOLOGY
    74. Shi, YL; Peng, HR; Xie, Y; Xie, GW; Zhao, C; Li, SZ
      Plasma CVD of hard coatings Ti(CNO) using metallo-organic compound Ti(OC3H7)(4)

      SURFACE & COATINGS TECHNOLOGY
    75. Itagaki, N; Fukuda, A; Yoshizawa, T; Shindo, M; Ueda, Y; Kawai, Y
      Plasma parameter measurements and deposition of a-Si : H thin films in pulsed ECR plasma.

      SURFACE & COATINGS TECHNOLOGY
    76. Wohle, J; Pfohl, C; Rie, KT; Gebauer-Teichmann, A; Kim, SK
      Deposition of TiCN and ZrCN layers on light metals by PACVD method using radio frequency and pulsed-DC plasma

      SURFACE & COATINGS TECHNOLOGY
    77. Pu, YK; Ren, YF; Yang, SZ; Dywer, D; Zhang, XG; Jia, XJ
      The dependence of GaN growth rate on electron temperature in an ECR plasma

      SURFACE & COATINGS TECHNOLOGY
    78. Zhou, ZF; Bello, I; Lei, MK; Li, KY; Lee, CS; Lee, ST
      Synthesis and characterization of boron carbon nitride films by radio frequency magnetron sputtering

      SURFACE & COATINGS TECHNOLOGY
    79. Hiraki, A
      Low-temperature (200 degrees C) growth of diamond on nano-seeded substrates

      APPLIED SURFACE SCIENCE
    80. Nagels, P; Tichy, L; Mertens, R; Callaerts, R
      Low-temperature photodarkening of the AsxSe100-x system prepared by PECVD

      MATERIALS LETTERS
    81. Spitsyn, BV; Bouilov, LL; Alexenko, AE
      Origin, state of the art and some prospects of the diamond CVD

      BRAZILIAN JOURNAL OF PHYSICS
    82. Liu, ZJ; Zhang, DW; Wang, PF; Ding, SJ; Zhang, JY; Wang, JT; Kohse-Hoinghaus, K
      Projective phase diagrams for CVD diamond growth from C-H and C-H-O systems

      THIN SOLID FILMS
    83. Jiang, YB; Zhang, HX; Cheng, DJ; Yang, SZ
      Effect of substrate temperature on the deposition of C-N films by pulsed high-temperature C-H-N Plasma CVD

      THIN SOLID FILMS
    84. Akahori, H; Handa, M; Yoshida, H; Kozuka, Y
      Osmium-metal coating device using hollow-cathode plasma CVD method

      JOURNAL OF ELECTRON MICROSCOPY
    85. Horita, M; Yazaki, T; Tanaka, S; Matsushima, Y
      Polarization-insensitive InGaAsP/InP vertical coupler filter with deep grating by five-step MOVPE growth

      JOURNAL OF CRYSTAL GROWTH
    86. Majima, T; Yamamoto, H; Kulinich, SA; Terashima, K
      High-rate deposition of LiNb1-xTaxO3 films by thermal plasma spray CVD

      JOURNAL OF CRYSTAL GROWTH
    87. Yamamoto, T; Toyoguchi, T; Honda, F
      Ultrathin amorphous C : H overcoats by pCVD on thin film media

      IEEE TRANSACTIONS ON MAGNETICS
    88. Sasaki, T; Fujikake, S; Ichikawa, Y
      Structural properties of p-type microcrystalline silicon as a window layerof solar cells

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    89. Isomura, M; Kondo, M; Matsuda, A
      Effects of hydrogen diluted silane plasma on amorphous silicon solar cells

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    90. Hayashi, Y; Hagimoto, K; Ebisu, H; Kalaga, MK; Soga, T; Umeno, M; Jimbo, T
      Effect of radio frequency power on the properties of hydrogenated amorphous carbon films grown by radio frequency plasma-enhanced chemical vapor deposition

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    91. Sato, K; Cheng, SH; Haruta, H; Yokoyama, T; Kumashiro, Y
      Substrate temperature dependence of the surface reaction mechanism of methane plasma chemical vapor depositon: Experimental and ab initio molecular orbital study

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    92. Yoshino, M; Shimozuma, M; Date, H; Rodrigo, A; Tagashira, H
      Properties of TiN films on heated substrate below 550 degrees C by 50 Hz plasma-enhanced chemical vapor deposition

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    93. Tanaka, D; Ohshio, S; Saitoh, H
      Nano-indentation for structural analysis of hydrogen- and nitrogen-containing carbon films

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    94. Shiratani, M; Maeda, S; Koga, K; Watanabe, Y
      Effects of gas temperature gradient, pulse discharge modulation, and hydrogen dilution on particle growth in silane RF discharges

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    95. Lim, SW; Shimogaki, Y; Nakano, Y; Tada, K; Komiyama, H
      Decrease in deposition rate and improvement of step coverage by CF4 addition to plasma-enhanced chemical vapor deposition of silicon oxide films

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    96. Nagatsu, M; Sano, T; Takada, N; Guang, WX; Hirao, T; Sugai, H
      Field-emission characteristics of hydrogenated amorphous carbon films prepared by surface wave plasma

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    97. Jiang, N; Kujime, S; Yamamoto, H; Inaoka, T; Naoi, Y; Shintani, Y; Makita, H; Hatta, A; Hiraki, A
      Electron microscopic study on the initial stages of (111)-oriented diamonds grown on Pt substrates

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    98. Matsumoto, S; Zhang, WJ
      High-rate deposition of high-quality, thick cubic boron nitride films by bias-assisted DC jet plasma chemical vapor deposition

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    99. Yagi, S; Abe, K; Yamada, A; Konagai, M
      Epitaxial growth of Si1-yCy film by low temperature chemical vapor deposition

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    100. Fukutsuka, T; Abe, T; Inaba, M; Ogumi, Z
      Electrochemical intercalation of Li into carbon thin films prepared by plasma CVD

      MOLECULAR CRYSTALS AND LIQUID CRYSTALS


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Documento generato il 26/10/20 alle ore 08:41:55