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La ricerca find articoli where soggetti phrase all words 'molecular beam epitaxy (MBE)' sort by level,fasc_key/DESCEND, pagina_ini_num/ASCEND ha restituito 218 riferimenti
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    1. Grange, W; Ulhaq-Bouillet, C; Maret, M; Thibault, J
      Chemical long-range ordering in a CoPt alloy film grown by molecular beam epitaxy

      ACTA MATERIALIA
    2. Varesi, JB; Bornfreund, RE; Childs, AC; Radford, WA; Maranowski, KD; Peterson, JM; Johnson, SM; Giegerich, LM; de Lyon, TJ; Jensen, JE
      Fabrication of high-performance large-format MWIR focal plane arrays from MBE-grown HgCdTe on 4 '' silicon substrates

      JOURNAL OF ELECTRONIC MATERIALS
    3. D'Souza, AI; Dewames, RE; Wijewarnasuriya, PS; Hildebrandt, G; Arias, JM
      Current mechanisms in VLWIR Hg1-xCdxTe photodiodes

      JOURNAL OF ELECTRONIC MATERIALS
    4. Almeida, LA; Hirsch, L; Martinka, M; Boyd, PR; Dinan, JH
      Improved morphology and crystalline quality of MBE CdZnTe/Si

      JOURNAL OF ELECTRONIC MATERIALS
    5. Maranowski, KD; Peterson, JM; Johnson, SM; Varesi, JB; Childs, AC; Bornfreund, RE; Buell, AA; Radford, WA; de Lyon, TJ; Jensen, JE
      MBE growth of HgCdTe on silicon substrates for large format MWIR focal plane arrays

      JOURNAL OF ELECTRONIC MATERIALS
    6. Hong, SK; Chen, Y; Ko, HJ; Wenisch, H; Hanada, T; Yao, T
      ZnO and related materials: Plasma-assisted molecular beam epitaxial growth, characterization, and application

      JOURNAL OF ELECTRONIC MATERIALS
    7. Brill, G; Velicu, S; Boieriu, P; Chen, Y; Dhar, NK; Lee, TS; Selamet, Y; Sivananthan, S
      MBE growth and device processing of MWIR HgCdTe on large area Si substrates

      JOURNAL OF ELECTRONIC MATERIALS
    8. Hada, T; Miyamoto, H; Yanagisawa, J; Wakaya, F; Yuba, Y; Gamo, K
      Carrier activation in in situ Si-doped GaAs layers fabricated by a focusedSi ion beam and molecular beam epitaxy combined system

      NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
    9. Yuan, K; Radhakrishnan, K; Zheng, HQ; Zhuang, QD; Ing, GI
      Characterization of linearly graded metamorphic InGaP buffer layers on GaAs using high-resolution X-ray diffraction

      THIN SOLID FILMS
    10. Kuchenbecker, J; Kibbel, H; Muthsam, P; Konig, U
      Thin SiGe buffer layer growth by in situ low energy hydrogen plasma preparation

      THIN SOLID FILMS
    11. Seo, YJ; Tsu, R
      Electronic and optical characteristics of multilayer nanocrystalline silicon/adsorbed oxygen superlattice

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    12. Takahashi, K; Okada, Y; Kawabe, M
      Fabrication of InGaN multiple quantum wells grown by hydrogen flux modulation in RF molecular beam epitaxy

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    13. Hiroi, N; Suemasu, T; Takakura, K; Seki, N; Hasegawa, F
      Direct growth of [100]-oriented high-quality beta-FeSi2 films on Si(001) substrates by molecular beam epitaxy

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    14. Haeni, JH; Theis, CD; Schlom, DG
      RHEED intensity oscillations for the stoichiometric growth of SrTiO3 thin films by reactive molecular beam epitaxy

      JOURNAL OF ELECTROCERAMICS
    15. Li, W; Li, AZ; Qi, M; Zhang, YG; Zhao, ZB; Yang, QK
      Characterization of GaN grown by RF plasma MBE

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    16. Rao, RVVVJ; Chong, TC; Tan, LS; Lau, WS; Liou, JJ
      A quasianalytical model for LT-GaAs and LT-Al0.3Ga0.7As MISFET devices

      MICROWAVE AND OPTICAL TECHNOLOGY LETTERS
    17. Lee, KK; Brown, T; Dagnall, G; Bicknell-Tassius, R; Brown, A; May, GS
      Using neural networks to construct models of the molecular beam epitaxy process

      IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING
    18. D'Souza, AI; Dawson, LC; Staller, C; Wijewarnasuriya, PS; Dewames, RE; McLevige, WV; Arias, JM; Edwall, D; Hildebrandt, G
      Large VLWIR Hg1-xCdxTe photovoltaic detectors

      JOURNAL OF ELECTRONIC MATERIALS
    19. Ferret, P; Zanatta, JP; Hamelin, R; Cremer, S; Million, A; Wolny, M; Destefanis, G
      Status of the MBE technology at Leti LIR for the manufacturing of HgCdTe focal plane arrays

      JOURNAL OF ELECTRONIC MATERIALS
    20. Zhao, LJ; Speck, JS; Rajavel, R; Jensen, J; Leonard, D; Strand, T; Hamilton, W
      Transmission electron microscopy studies of defects in HgCdTe device structures grown by molecular beam epitaxy

      JOURNAL OF ELECTRONIC MATERIALS
    21. Darasella, M; Brill, G; Garland, JW; Nathan, V; Sivananthan, S
      In-situ control of temperature and alloy composition of Cd1-xZnxTe grown by molecular beam epitaxy

      JOURNAL OF ELECTRONIC MATERIALS
    22. Jackson, M; Mendus, T; Short, GR; Thompson, SM; Whiting, JSS; Ho, EM; Petford-Long, A
      Correlation of magnetic and microstructural properties of obliquely deposited Co/Cr thin films

      JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS
    23. Chern, G; Horng, L; Lin, MZ; Li, SM; Lee, DS; Hou, TY; Tai, MF; Wu, TH
      Structural and magnetic characterization of Fe3O4/Mn3O4 superlattices

      JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS
    24. Schulze, J; Stimpel, T; Baumgartner, H; Eisele, I
      Self assembling growth of triangular pyramidal ge islands on a Si(111)-root 3 x root 3-R30 degrees-B surface phase

      APPLIED SURFACE SCIENCE
    25. Yamaguchi, K; Hiraike, T; Kawaguchi, K
      One-dimensional alignment of InAs dots on strain-controlled InGaAs layers by selective-area molecular-beam epitaxy

      APPLIED SURFACE SCIENCE
    26. Fissel, A; Akhtariev, R; Richter, W
      Stranski-Krastanov growth of Si on SiC(0001)

      THIN SOLID FILMS
    27. Fink, C; Anil, KG; Hansch, W; Sedlmaier, S; Schulze, J; Eisele, I
      MBE-grown vertical power-MOSFETs with 100-nm channel length

      THIN SOLID FILMS
    28. Mozume, T; Georgiev, N
      Interface control of InGaAs/AlAsSb heterostructures

      THIN SOLID FILMS
    29. Stifter, D; Bonanni, A; Garcia-Rocha, M; Schmid, M; Hingerl, K; Sitter, H
      In situ reflectance difference spectroscopy of p-type ZnTe : N grown by MBE

      THIN SOLID FILMS
    30. Morozov, AO; Kampen, TU; Zahn, DRT
      PTCDA film formation on Si(111): H-1 x 1 surface: total current spectroscopy monitoring

      SURFACE SCIENCE
    31. Stadler, A; Sulima, T; Schulze, J; Fink, C; Kottantharayil, A; Hansch, W; Baumgartner, H; Eisele, I; Lerch, W
      Dopant diffusion during rapid thermal oxidation

      SOLID-STATE ELECTRONICS
    32. Ohachi, T; Feng, JM; Asai, K
      Arsenic pressure dependence of Ga desorption from MBE high index GaAs substrates

      JOURNAL OF CRYSTAL GROWTH
    33. Wang, XD; Niu, ZC; Feng, SL
      Influence of InxGa1-xAs (0 <= x <= 0.3) cap layer on structural and optical properties of self-assembled InAs/GaAs quantum dots

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    34. Jang, KY; Okada, Y; Kawabe, M
      Effect of atomic hydrogen on GaAs growth on GaAs(311)A substrate in molecular beam epitaxy

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    35. Mitsui, T; Yamamoto, N
      Influences of interfacial misfit dislocations on cathodoluminescence of ZnS/GaAs(001) studied by transmission electron microscopy

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    36. Tambo, T; Shimizu, A; Matsuda, A; Tatsuyama, C
      In-situ annealing of thin SrO films grown on Si(001)-2 x 1 by molecular beam epitaxy

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    37. Kikuchi, A; Yamada, T; Nakamura, S; Kusakabe, K; Sugihara, D; Kishino, K
      Improvement of crystal quality of rf-plasma-assisted molecular beam epitaxy grown Ga-polarity GaN by high-temperature grown AlN multiple intermediatelayers

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    38. Okamoto, Y; Takahashi, K; Nakamura, H; Okada, Y; Kawabe, M
      Effects of atomic hydrogen on the indium incorporation in InGaN grown by RF-molecular beam epitaxy

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    39. Suemasu, T; Negishi, Y; Takakura, K; Hasegawa, F
      Room temperature 1.6 mu m electroluminescence from a Si-based light emitting diode with beta-FeSi2 active region

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    40. Zhang, TY; Su, YJ
      Elasticity studies of the critical thickness of an epilayer deposited on acompliant substrate

      ACTA MATERIALIA
    41. Voigtlander, B
      Scanning tunneling microscopy studies during semiconductor growth

      MICRON
    42. Fang, ZQ; Xie, QH; Look, DC; Ehret, J; Van Nostrand, JE
      Electrical characterization of self-assembled In0.5Ga0.5As/GaAs quantum dots by deep level transient spectroscopy

      JOURNAL OF ELECTRONIC MATERIALS
    43. D'Souza, AI; Wijewarnasuriya, PS; Dewames, RE; Hildebrandt, G; Bajaj, J; Edwall, DD; Pasko, JG; Arias, JM
      Excess low frequency noise/I-V studies in p-on-n MBE LWIR Hg1-xCdxTe detectors

      JOURNAL OF ELECTRONIC MATERIALS
    44. Wijewarnasuriya, PS; Zandian, M; Young, DB; Waldrop, J; Edwall, DD; McLevige, WV; Lee, D; Arias, J; D'Souza, AI
      Microscopic defects on MBE grown LWIR Hg1-xCdxTe material and their impacton device performance

      JOURNAL OF ELECTRONIC MATERIALS
    45. Chauvet, C; Bousquet, V; Tournie, E; Faurie, JP
      New developments in the heteroepitaxial growth of Be-chalcogenides based semiconducting alloys

      JOURNAL OF ELECTRONIC MATERIALS
    46. de Lyon, TJ; Jensen, JE; Gorwitz, MD; Cockrum, CA; Johnson, SM; Venzor, GM
      MBE growth of HgCdTe on silicon substrates for large-area infrared focal plane arrays: A review of recent progress

      JOURNAL OF ELECTRONIC MATERIALS
    47. Edwall, DD; Young, DB; Chen, AC; Zandian, M; Arias, JM; Dlugosch, B; Priddy, S
      Initial evaluation of a valved Te source for MBE growth of HgCdTe

      JOURNAL OF ELECTRONIC MATERIALS
    48. Aqariden, F; Duncan, WM; Shih, HD; Almeida, LA; Bevan, MJ
      Effect of incident angle in spectral ellipsometry on composition control during molecular beam epitaxial growth of HgCdTe

      JOURNAL OF ELECTRONIC MATERIALS
    49. Grein, CH; Garland, JW; Sivananthan, S; Wijewarnasuriya, PS; Aqariden, F; Fuchs, M
      Arsenic incorporation in MBE grown Hg1-xCdxTe

      JOURNAL OF ELECTRONIC MATERIALS
    50. Berding, MA; Sher, A
      Arsenic incorporation during MBE growth of HgCdTe

      JOURNAL OF ELECTRONIC MATERIALS
    51. Hirsch, LS; Haakenaasen, R; Colin, T; Ziemer, KS; Stinespring, CD; Lovold, S; Myers, TH
      X-ray photoelectron spectroscopy study of oxide and Te overlayers on As-grown and etched HgCdTe

      JOURNAL OF ELECTRONIC MATERIALS
    52. Johnson, JN; Almeida, LA; Martinka, M; Benson, JD; Dinan, JH
      Use of electron cyclotron resonance plasmas to prepare CdZnTe (211)B substrates for HgCdTe molecular beam epitaxy

      JOURNAL OF ELECTRONIC MATERIALS
    53. Becker, CR; Latussek, V; Li, M; Pfeuffer-Jeschke, A; Landwehr, G
      Valence band offset in HgTe/Hg1-xCdxTe superlattices

      JOURNAL OF ELECTRONIC MATERIALS
    54. Sharma, PC; Alt, KW; Yeh, DY; Wang, D; Wang, KL
      Formation of nanometer-scale InAs islands on silicon

      JOURNAL OF ELECTRONIC MATERIALS
    55. Fissel, A; Pfennighaus, K; Kaiser, U; Schroter, B; Richter, W
      Mechanisms of homo- and heteroepitaxial growth of SiC on alpha-SiC(0001) by solid-source molecular beam epitaxy

      JOURNAL OF ELECTRONIC MATERIALS
    56. Xie, QH; Brown, JL; Jones, RL; Van Nostrand, JE
      Shape stabilization and size equalization of InGaAs self-organized quantumdots

      JOURNAL OF ELECTRONIC MATERIALS
    57. Niu, ZC; Notzel, R; Jahn, U; Schonherr, HP; Fricke, J; Ploog, KH
      Self-limiting MBE growth and characterization of three-dimensionally confined nanostructures on patterned GaAs(311)A substrates

      JOURNAL OF ELECTRONIC MATERIALS
    58. Harman, TC; Spears, DL; Walsh, MP
      PbTe/Te superlattice structures with enhanced thermoelectric figures of merit

      JOURNAL OF ELECTRONIC MATERIALS
    59. Chern, G; Lee, DS; Chang, HC; Wu, TH
      Crystalline anisotropy effects on magnetoresistance in epitaxial spin-valve sandwiches with antiferromagnetic NiO films

      JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS
    60. Ashenford, DE; Long, F; Hagston, WE; Lunn, B; Matthews, A
      Experimental and theoretical studies of the low-temperature growth of chromia and alumina

      SURFACE & COATINGS TECHNOLOGY
    61. Lin, SP; Hwang, CC; Chu, HS
      Effect of diatomic islands on step morphological stability of a terrace edge in molecular beam epitaxy

      THIN SOLID FILMS
    62. Kawano, T; Isobe, T; Senna, M; Nishihara, T; Tanaka, J
      (Ba,Sr)TiO3 solid solution thin-films grown by a molecular beam epitaxy method

      THIN SOLID FILMS
    63. Wu, HZ; Fang, XM; Salas, R; McAlister, D; McCann, PJ
      Transfer of PbSe/PbEuSe epilayers grown by MBE on BaF2-coated Si(111)

      THIN SOLID FILMS
    64. Balaji, T; Lifante, G; Daran, E; Legros, R; Lacoste, G
      Growth by molecular beam epitaxy and characterization of CaF2 : Pr3+ planar waveguides

      THIN SOLID FILMS
    65. Karunamuni, J; Kurtz, RL; Stockbauer, RL
      Growth of iron oxide on Cu(001) at elevated temperature

      SURFACE SCIENCE
    66. Braun, W; Moller, H; Zhang, YH
      Phase-locked substrate rotation: new applications for RHEED in MBE growth

      JOURNAL OF CRYSTAL GROWTH
    67. Okamoto, A; Yoshida, T; Muramatsu, S; Shibasaki, I
      Magneto-resistance effect in InSb thin film grown using molecular beam epitaxy

      JOURNAL OF CRYSTAL GROWTH
    68. Suemasu, T; Iikura, Y; Fujii, T; Takakura, K; Hiroi, N; Hasegawa, F
      Improvement of 1.5 mu m photoluminescence from reactive deposition epitaxy(RDE) grown beta-FeSi2 balls in Si by high temperature annealing

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    69. Okamoto, Y; Hashiguchi, S; Okada, Y; Kawabe, M
      Effects of atomic hydrogen on the growth of GaN by RF-molecular beam epitaxy

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    70. Chun, YJ; Uemura, T; Baba, T
      Self-aligned surface tunnel transistors fabricated by a regrowth technique

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    71. Meng, Z; Yang, Q; Yip, PC; Eyink, KG; Taferner, WT; Igelnik, B
      Combined use of computational intelligence and materials data for on-line monitoring and control of MBE experiments

      ENGINEERING APPLICATIONS OF ARTIFICIAL INTELLIGENCE
    72. AJISAWA A; KAWANO M; NOMURA M; MIYOSHI M; ODA N
      256X256 LWIR FPAS USING MBE GROWN HGCDTE ON SI SUBSTRATES

      NEC research & development
    73. XU Q; HSU JWP; TING SM; FITZGERALD EA; SIEG RM; RINGEL SA
      SCANNING FORCE MICROSCOPY STUDIES OF GAAS FILMS GROWN ON OFFCUT GE SUBSTRATES

      Journal of electronic materials
    74. KITADA T; SAEKI T; OHASHI M; SHIMOMURA S; ADACHI A; OKAMOTO Y; SANO N; HIYAMIZU S
      SUPER-FLAT INTERFACES IN IN0.53GA0.47AS IN0.52AL0.48AS QUANTUM-WELLS GROWN ON (411)A INP SUBSTRATES BY MOLECULAR-BEAM EPITAXY/

      Journal of electronic materials
    75. RUJIRAWAT S; SMITH DJ; FAURIE JP; NEU G; NATHAN V; SIVANANTHAN S
      MICROSTRUCTURAL AND OPTICAL CHARACTERIZATION OF CDTE(211)B ZNTE/SI(211) GROWN BY MOLECULAR-BEAM EPITAXY/

      Journal of electronic materials
    76. DOOLITTLE WA; KANG S; KROPEWNICKI TJ; STOCK S; KOHL PA; BROWN AS
      MBE GROWTH OF HIGH-QUALITY GAN ON LIGAO2

      Journal of electronic materials
    77. LEE HJ; YU SJ; ASAHI H; GONDA S; KIM YH; RHEE JK; NOH SJ
      VERY-LOW RESISTANCE OHMIC CONTACTS TO N-GAN

      Journal of electronic materials
    78. FURTHMULLER J; KACKELL P; BECHSTEDT F; FISSEL A; PFENNIGHAUS K; SCHROTER B; RICHTER W
      MODEL OF THE EPITAXIAL-GROWTH OF SIC-POLYTYPES UNDER SURFACE-STABILIZED CONDITIONS

      Journal of electronic materials
    79. SIEG RM; RINGEL SA; TING SM; FITZGERALD EA; SACKS RN
      ANTIPHASE DOMAIN-FREE GROWTH OF GAAS ON OFFCUT (001)GE WAFERS BY MOLECULAR-BEAM EPITAXY WITH SUPPRESSED GE OUTDIFFUSION

      Journal of electronic materials
    80. ALMEIDA LA; JOHNSON JN; BENSON JD; DINAN JH; JOHS B
      AUTOMATED COMPOSITIONAL CONTROL OF HG1-XCDXTE DURING MBE, USING IN-SITU SPECTROSCOPIC ELLIPSOMETRY

      Journal of electronic materials
    81. VYDYANATH HR; AQARIDEN F; WIJEWARNASURIYA PS; SIVANATHAN S; CHAMBERS G; BECKER L
      ANALYSIS OF THE VARIATION IN THE COMPOSITION AS A FUNCTION OF GROWTH-PARAMETERS IN THE MBE GROWTH OF INDIUM-DOPED HG1-XCDXTE

      Journal of electronic materials
    82. VYDYANATH HR; AQARIDEN F; WIJEWARNASURIYA PS; SIVANANTHAN S; NATHAN V
      OBSERVATION OF PREVALENCE OF QUASI-EQUILIBRIUM IN THE MBE GROWTH OF HG1-XCDXTE

      Journal of electronic materials
    83. LANGE MD; STORM DF; COLE T
      MOLECULAR-BEAM EPITAXY OF INTLAS

      Journal of electronic materials
    84. ZANATTA JP; FERRET P; THERET G; MILLION A; WOLNY M; CHAMONAL JP; DESTEFANIS G
      HETEROEPITAXY OF HGCDTE (211)B ON GE SUBSTRATES BY MOLECULAR-BEAM EPITAXY FOR INFRARED DETECTORS

      Journal of electronic materials
    85. WIJEWARNASURIYA PS; ZANDIAN M; EDWALL DD; MCLEVIGE WV; CHEN CA; PASKO JG; HILDEBRANDT G; CHEN AC; ARIAS JM; DSOUZA AI; RUJIRAWAT S; SIVANATHAN S
      MBE P-ON-N HG1-XCDXTE HETEROSTRUCTURE DETECTORS ON SILICON SUBSTRATES

      Journal of electronic materials
    86. DELYON TJ; RAJAVEL RD; VIGIL JA; JENSEN JE; WU OK; COCKRUM CA; JOHNSON SM; VENZOR GM; BAILEY SL; KASAI I; AHLGREN WL; SMITH MS
      MOLECULAR-BEAM EPITAXIAL-GROWTH OF HGCDTE INFRARED FOCAL-PLANE ARRAYSON SILICON SUBSTRATES FOR MIDWAVE INFRARED APPLICATIONS

      Journal of electronic materials
    87. CHEN AC; ZANDIAN M; EDWALL DD; DEWAMES RE; WIJEWARNASURIYA PS; ARIAS JM; SIVANANTHAN S; BERDING M; SHER A
      MBE GROWTH AND CHARACTERIZATION OF IN-SITU ARSENIC DOPED HGCDTE

      Journal of electronic materials
    88. RHIGER DR; PETERSON JM; EMERSON RM; GORDON EE; SEN S; CHEN Y; DUDLEY M
      INVESTIGATION OF THE CROSS-HATCH PATTERN AND LOCALIZED DEFECTS IN EPITAXIAL HGCDTE

      Journal of electronic materials
    89. CHANDRA D; SHIH HD; AQARIDEN F; DAT R; GUTZLER S; BEVAN MJ; ORENT T
      FORMATION AND CONTROL OF DEFECTS DURING MOLECULAR-BEAM EPITAXIAL-GROWTH OF HGCDTE

      Journal of electronic materials
    90. HIRSCH LS; ZIEMER KS; RICHARDSBABB MR; STINESPRING CD; MYERS TH; COLIN T
      THE USE OF ATOMIC-HYDROGEN FOR LOW-TEMPERATURE OXIDE REMOVAL FROM HGCDTE

      Journal of electronic materials
    91. JOHNSON JN; ALMEIDA LA; BENSON JD; DINAN JH; MARTINKA M
      ELECTRON-CYCLOTRON-RESONANCE PLASMA PREPARATION OF CDZNTE (211)B SURFACES FOR HGCDTE MOLECULAR-BEAM EPITAXY

      Journal of electronic materials
    92. EDWALL DD; DEWAMES RE; MCLEVIGE WV; PASKO JG; ARIAS JM
      MEASUREMENT OF MINORITY-CARRIER LIFETIME IN N-TYPE MBE HGCDTE AND ITSDEPENDENCE ON ANNEALING

      Journal of electronic materials
    93. RAJAVEL RD; JAMBA DM; JENSEN JE; WU OK; BREWER PD; WILSON JA; JOHNSON JL; PATTEN EA; KOSAI K; CAULFIELD JT; GOETZ PM
      MOLECULAR-BEAM EPITAXIAL-GROWTH AND PERFORMANCE OF HGCDTE-BASED SIMULTANEOUS-MODE 2-COLOR DETECTORS

      Journal of electronic materials
    94. TING SM; FITZGERALD EA; SIEG RM; RINGEL SA
      RANGE OF DEFECT MORPHOLOGIES ON GAAS GROWN ON OFFCUT (001)GE SUBSTRATES

      Journal of electronic materials
    95. MUTHUVENKATRAMAN S; GORANTLA S; VENKAT R; DORSEY DL
      ANTISITE ARSENIC INCORPORATION IN THE LOW-TEMPERATURE MBE OF GALLIUM-ARSENIDE - PHYSICS AND MODELING

      Journal of electronic materials
    96. MARUYAMA T; MIYAJIMA Y; HATA K; CHO SH; AKIMOTO K; OKUMURA H; YOSHIDA S; KATO H
      ELECTRONIC-STRUCTURE OF WURTZITE-GAN AND ZINC BLENDE-GAN STUDIED BY ANGLE-RESOLVED PHOTOEMISSION

      Journal of electronic materials
    97. SHI Z; ZOGG H; KELLER U
      THICK CRACK-FREE CAF2 EPITAXIAL LAYER ON GAAS(100) SUBSTRATE BY MOLECULAR-BEAM EPITAXY

      Journal of electronic materials
    98. CHO MW; KOH KW; BAGNALL DM; ZHU Z; YAO T
      ZNSE HETEROEPITAXY ON GAAS(110) SUBSTRATE

      Journal of electronic materials
    99. NOTZEL R; RAMSTEINER M; NIU ZC; TRAMPERT A; DAWERITZ L; PLOOG KH
      ATOMIC-HYDROGEN ASSISTED MOLECULAR-BEAM EPITAXY ON PATTERNED GAAS (311)A SUBSTRATES - FORMATION OF HIGHLY UNIFORM QUANTUM-DOT ARRAYS

      Journal of electronic materials
    100. SHEN A; OHNO H; HORIKOSHI Y; GUO SP; OHNO Y; MATSUKURA F
      LOW-TEMPERATURE GAAS GROWN BY MOLECULAR-BEAM EPITAXY UNDER HIGH AS OVERPRESSURE - A REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION STUDY

      Applied surface science


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Documento generato il 04/06/20 alle ore 14:42:01