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La ricerca find articoli where soggetti phrase all words 'molecular beam epitaxy' sort by level,fasc_key/DESCEND, pagina_ini_num/ASCEND ha restituito 8219 riferimenti
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    1. Nair, JP; Chaure, NB; Jayakrishnan, R; Pandey, RK
      Synthesis and characterization of Sb-doped CdTe films

      JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS
    2. Li, ZQ; Bang, HJ; Piao, GX; Sawahata, J; Akimoto, K; Kinoshita, H; Watanabe, K
      Substrate roughness dependence of structural and optical properties of Eu-doped GaN grown by gas source molecular beam epitaxy

      JOURNAL OF CRYSTAL GROWTH
    3. Lu, LW; Fong, WK; Zhu, CF; Leung, BH; Surya, C; Wang, J; Ge, WK
      Study of GaN thin films grown on intermediate-temperature buffer layers bymolecular beam epitaxy

      JOURNAL OF CRYSTAL GROWTH
    4. Kim, JS; Yu, PW; Leem, JY; Lee, JI; Noh, SK; Kim, JS; Kim, GH; Kang, SK; Ban, SI; Kim, SG; Jang, YD; Lee, UH; Yim, JS; Lee, D
      Growth of Si-doped InAs quantum dots and annealing effects on size distribution

      JOURNAL OF CRYSTAL GROWTH
    5. Kim, GH; Choi, JB; Leem, JY; Lee, JI; Noh, SK; Kim, JS; Kim, JS; Kang, SK; Ban, SI
      Optical properties of InAs epilayers grown on GaAs by molecular beam epitaxy

      JOURNAL OF CRYSTAL GROWTH
    6. Lewis, NS
      Frontiers of research in photoelectrochemical solar energy conversion

      JOURNAL OF ELECTROANALYTICAL CHEMISTRY
    7. Ma, ZQ; Bhattacharya, P; Rieh, JS; Ponchak, GE; Alterovitz, SA; Croke, ET
      Reliability of microwave SiGe/Si heterojunction bipolar transistors

      IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS
    8. Gundel, A; Cagnon, L; Gomes, C; Morrone, A; Schmidt, J; Allongue, P
      In-situ magnetic measurements of electrodeposited ultrathin Co, Ni and Fe/Au(111) layers

      PHYSICAL CHEMISTRY CHEMICAL PHYSICS
    9. Alferov, ZI
      The double heterostructure: The concept and its applications in physics, electronics, and technology (Nobel lecture)

      CHEMPHYSCHEM
    10. Mougin, A; Dufour, C; Maloufi, N; Dumesnil, K; Mangin, P
      From anisotropic dots to smooth RFe2(110) single crystal layers (R = rare earth)

      EUROPEAN PHYSICAL JOURNAL B
    11. Springholz, G; Pinczolits, M; Holy, V; Zerlauth, S; Vavra, I; Bauer, G
      Vertical and lateral ordering in self-organized quantum dot superlattices

      PHYSICA E
    12. Ploog, KH; Notzel, R
      Novel semiconductor nanostructures by functional self-organized epitaxy

      PHYSICA E
    13. Razeghi, M; Slivken, S; Tahraoui, A; Matlis, A; Park, YS
      High power 3-12 mu m infrared lasers: recent improvements and future trends

      PHYSICA E
    14. Zanelato, G; Pusep, YA; Galzerani, JC; Lubyshev, DI; Gonzalez-Borrero, PP
      Raman study of the segregation of GaAs/AlAs heterostructures grown by molecular beam epitaxy

      PHYSICA E
    15. Hayashi, T; Hashimoto, Y; Yoshida, S; Katsumoto, S; Iye, Y
      Control of material parameters and metal-insulator transition in (Ga,Mn)As

      PHYSICA E
    16. Sadowski, J; Mathieu, R; Svedlindh, P; Karlsteen, M; Kanski, J; Ilver, L; Asklund, H; Swiatek, K; Domagala, JZ; Bak-Misiuk, J; Maude, D
      Properties of GaMnAs layers grown by migration enhanced epitaxy at very low substrate temperatures

      PHYSICA E
    17. Moriya, R; Katsumata, Y; Takatani, Y; Haneda, S; Kondo, T; Munekata, H
      Preparation and magneto-optical property of highly-resistive (Ga,Fe)As epilayers

      PHYSICA E
    18. Kuwabara, S; Ishii, K; Haneda, S; Kondo, T; Munekata, H
      Preparation of wurtzite GaN-based magnetic alloy semiconductors by molecular beam epitaxy

      PHYSICA E
    19. Haneda, S; Koshihara, S; Munekata, H
      Formation of FeAs and Fe crystallites in GaAs-Fe composite structures and their roles in light-enhanced magnetization

      PHYSICA E
    20. Akinaga, H; Mizuguchi, M; Manago, T; Sato, T; Kuramochi, H; Ono, K; Ofuchi, H; Oshima, M
      Magnetoresistive switch effect in MnSb granular films grown on sulfur-passivated GaAs: more-than 10 000% magnetoresistance effect at room-temperature

      PHYSICA E
    21. Krier, A
      Physics and technology of mid-infrared light emitting diodes

      PHILOSOPHICAL TRANSACTIONS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL PHYSICAL AND ENGINEERING SCIENCES
    22. Putero, M; Burle, N; Pichaud, B
      Misfit dislocation cross-slip at the first stages of plastic relaxation inlow-mismatch heterostructures

      PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS ANDMECHANICAL PROPERTIES
    23. Grange, W; Ulhaq-Bouillet, C; Maret, M; Thibault, J
      Chemical long-range ordering in a CoPt alloy film grown by molecular beam epitaxy

      ACTA MATERIALIA
    24. Fastenau, JM; Liu, WK; Fang, XM; Lubyshev, DI; Pelzel, RI; Yurasits, TR; Stewart, TR; Lee, JH; Li, SS; Tidrow, MZ
      Commercial production of QWIP wafers by molecular beam epitaxy

      INFRARED PHYSICS & TECHNOLOGY
    25. Boschetti, C; Bandeira, IN; Closs, H; Ueta, AY; Rappl, PHO; Motisuke, P; Abramof, E
      Molecular beam epitaxial growth of PbTe and PbSnTe on Si(100) substrates for heterojunction infrared detectors

      INFRARED PHYSICS & TECHNOLOGY
    26. Sawamura, A; Yao, H; Kaji, M
      C and Si impurity atoms on a GaAs(001) surface

      MATERIALS TRANSACTIONS
    27. Mathur, S; Veith, M; Sivakov, V; Shen, H; Gao, HB
      Composition, morphology and particle size control in nanocrystalline iron oxide films grown by single-source CVD

      JOURNAL DE PHYSIQUE IV
    28. Chen, GC; Kim, MC; Kim, TH; Lee, SB; Boo, JH
      Growth of BON thin films by plasma assisted MOCVD and study of deposition parameter effects on the film structure

      JOURNAL DE PHYSIQUE IV
    29. Losurdo, M; Grimaldi, A; Giangregorio, M; Capezzuto, P; Bruno, G
      GaN heteroepitaxy by remote plasma MOCVD: Real time monitoring by laser reflectance interferometry

      JOURNAL DE PHYSIQUE IV
    30. Morishita, Y; Kawai, S; Sunagawa, J; Suzuki, T
      Magnetic-field-assisted anodization of GaAs substrates

      ELECTROCHEMICAL AND SOLID STATE LETTERS
    31. Buyanova, IA; Chen, WM; Monemar, B
      Electronic properties of Ga(In)NAs alloys

      MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH
    32. Dulk, M; Dobeli, M; Melchior, H
      Fabrication of saturable absorbers in InGaAsP-InP bulk semiconductor laserdiodes by heavy ion implantation

      IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
    33. Shimizu, H; Kumada, K; Uchiyama, S; Kasukawa, A
      High-performance CW 1.26-mu m GaInNAsSb-SQW ridge lasers

      IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
    34. Georgiev, N; Mozume, T
      Optical properties of InGaAs/AlAsSb type I single quantum wells lattice matched to InP

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    35. Chun, SH; Berry, JJ; Ku, KC; Samarth, N; Malajovich, I; Awschalom, DD
      Growth and characterization of MnAs/ZnSe ferromagnet/semiconductor hybrid heterostructures

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    36. Ghosh, S; Lenihan, AS; Dutt, MVG; Qasaimeh, Q; Steel, DG; Bhattacharya, P
      Nonlinear optical and electro-optic properties of InAs/GaAs self-organizedquantum dots

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    37. Li, HX; Daniels-Race, T; Hasan, MA
      Lateral correlation of InAs/AlInAs nanowire superlattices on InP(001)

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    38. Maksimov, O; Guo, SP; Fernandez, F; Tamargo, MC; Peiris, FC; Furdyna, JK
      High reflectivity symmetrically strained ZnxCdyMg1-x-ySe-based distributedBragg reflectors for current injection devices

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    39. Lubyshev, D; Liu, WK; Stewart, TR; Cornfeld, AB; Fang, XM; Xu, X; Specht, P; Kisielowski, C; Naidenkova, M; Goorsky, MS; Whelan, CS; Hoke, WE; Marsh, PF; Millunchick, JM; Svensson, SP
      Strain relaxation and dislocation filtering in metamorphic high electron mobility transistor structures grown on GaAs substrates

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    40. Lee, CD; Feenstra, RM; Rosa, AL; Neugebauer, J; Northrup, JE
      Silicon on GaN(0001) and (000(1)over-bar) surfaces

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    41. Nosho, BZ; Bennett, BR; Whitman, LJ; Goldenberg, M
      Effects of As-2 versus As-4 on InAs/GaSb heterostructures: As-for-Sb exchange and film stability

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    42. Guo, SP; Zhou, X; Maksimov, O; Tamargo, MC; Chi, C; Couzis, A; Maldarelli, C; Kuskovsky, IL; Neumark, GF
      Effects of Be on the II-VI/GaAs interface and on CdSe quantum dot formation

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    43. McKay, HA; Feenstra, RM; Schmidtling, T; Pohl, UW; Geisz, JF
      Distribution of nitrogen atoms in dilute GaAsN and InGaAsN alloys studied by scanning tunneling microscopy

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    44. Hingerl, K; Balderas-Navarro, RE; Bonanni, A; Stifter, D
      Influence of anisotropic in-plane strain on critical point resonances in reflectance difference data

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    45. Hashizume, T; Ootomo, S; Oyama, S; Konishi, M; Hasegawa, H
      Chemistry and electrical properties of surfaces of GaN and GaN/AlGaN heterostructures

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    46. Choi, KJ; Lee, JL
      Surface states on n-type Al0.24Ga0.76As characterized by deep-level transient spectroscopy

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    47. Luyo-Alvarado, J; Melendez-Lira, M; Lopez-Lopez, M; Goto, S
      Built-in electric fields in GaAs/GaAs structures with different in situ substrate treatments

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    48. Varavin, VS; Kravchenko, AF; Sidorov, YG
      A study of galvanomagnetic phenomena in MBE-grown n-CdxHg1-xTe films

      SEMICONDUCTORS
    49. Zverev, AV; Neizvestnyi, IG; Shvarts, NL; Yanovitskaya, ZS
      The simulation of epitaxy, sublimation, and annealing processes in a 3D silicon surface layer

      SEMICONDUCTORS
    50. Ovsyuk, VN; Sidorov, YG; Vasil'ev, VV; Shashkin, VV
      Arrays of 128 x 128 photodetectors based on HgCdTe layers and multilayer heterostructures with GaAs/AlGaAs quantum wells

      SEMICONDUCTORS
    51. Faleev, NN; Musikhin, YG; Suvorova, AA; Egorov, AY; Zhukov, AE; Kovsh, AR; Ustinov, VM; Tabuchi, M; Takeda, Y
      Anisotropy of the spatial distribution of In(Ga)As quantum dots in In(Ga)As-GaAs multilayer heterostructures studied by x-ray and synchrotron diffraction and transmission electron microscopy

      SEMICONDUCTORS
    52. Galiev, GB; Mokerov, VG; Lyapin, ER; Saraikin, VV; Khabarov, YV
      A study of the electrical and optical properties of Si delta-doped GaAs layers grown by MBE on a (111)A GaAs surface misoriented toward the [2(1)over-bar(1)over-bar] direction

      SEMICONDUCTORS
    53. Gordeev, NY; Ivanov, SV; Kopchatov, VI; Novikov, II; Shubina, TV; Il'inskaya, ND; Kop'ev, PS; Reuscher, G; Waag, A; Landwehr, G
      Improved degradation stability of blue-green II-VI light-emitting diodes with excluded nitrogen-doped ZnSe-based layers

      SEMICONDUCTORS
    54. Agafonov, EN; Aminov, UA; Georgobiani, AN; Lepnev, LS
      Observation of minority-carrier traps in Schottky diodes with a high barrier and a compensated near-contact region using deep-level transient spectroscopy

      SEMICONDUCTORS
    55. Yakimov, AI; Dvurechenskii, AV; Stepina, NP; Nikiforov, AI; Nenashev, AV
      Contribution of the electron-electron interaction to the optical properties of dense arrays of Ge/Si quantum dots

      JOURNAL OF EXPERIMENTAL AND THEORETICAL PHYSICS
    56. Baggio, C; Vardavas, R; Vvedensky, DD
      Fokker-Planck equation for lattice deposition models - art. no. 045103

      PHYSICAL REVIEW E
    57. Shim, Y; Landau, DP
      Dynamic finite-size scaling of the normalized height distribution in kinetic surface roughening - art. no. 036110

      PHYSICAL REVIEW E
    58. Raible, M; Linz, SJ; Hanggi, P
      Amorphous thin film growth: Effects of density inhomogeneities - art. no. 031506

      PHYSICAL REVIEW E
    59. Ghaisas, SV
      (2+1)-dimensional stochastic growth model and its application to some experimental observations - art. no. 062601

      PHYSICAL REVIEW E
    60. Gutheim, F; Muller-Krumbhaar, H; Brener, E
      Epitaxial growth with elastic interaction: Submonolayer island formation -art. no. 041603

      PHYSICAL REVIEW E
    61. Masuda-Jindo, K; Kikuchi, R; Nishitani, SR
      Application of tight-binding and path probability methods to the junction relaxation of semiconductor heterostructures

      JOURNAL OF PHASE EQUILIBRIA
    62. Ohtani, H; Kobayashi, K; Ishida, K
      Thermodynamic study of phase equilibria in strained III-V alloy semiconductors

      JOURNAL OF PHASE EQUILIBRIA
    63. Naito, M; Karimoto, S; Yamamoto, H; Nakada, H; Suzuki, K
      Production of double-sided large-area high-T-c wafers by molecular beam epitaxy

      IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY
    64. Klopf, F; Krebs, R; Reithmaier, JP; Forchel, A
      High-temperature operating 1.3-mu m quantum-dot lasers for telecommunication applications

      IEEE PHOTONICS TECHNOLOGY LETTERS
    65. Serries, D; Peter, M; Kiefer, R; Winkler, K; Wagner, J
      Improved performance of 2-mu m GaInAs strained quantum-well lasers on InP by increasing carrier confinement

      IEEE PHOTONICS TECHNOLOGY LETTERS
    66. Saarinen, M; Vilokkinen, V; Dumitrescu, M; Pessa, M
      Resonant-cavity light-emitting diodes operating at 655 nm with a high external quantum efficiency and light power

      IEEE PHOTONICS TECHNOLOGY LETTERS
    67. Gao, F; Huang, CJ; Huang, DD; Li, JP; Kong, MY; Zeng, YP; Li, JM; Lin, LY
      Increasing the photoluminescence intensity of Ge islands by chemical etching

      CHINESE PHYSICS
    68. Xue, QZ; Xue, QK; Kuwano, S; Nakayama, K; Sakurai, T
      Growth mode and surface reconstruction of GaN(000(1)over-bar) thin films on 6H-SiC(000(1)over-bar)

      CHINESE PHYSICS
    69. Wu, Y; Wang, SL; Chen, L; Yu, MF; Qiao, YM; He, L
      Indium doping on MBE grown HgCdTe

      JOURNAL OF INFRARED AND MILLIMETER WAVES
    70. Niu, ZC; Wang, XD; Miao, ZH; Feng, SL
      Photoluminescence properties of self-organized InGaAs/GaAs quantum dot structures

      JOURNAL OF INFRARED AND MILLIMETER WAVES
    71. Luo, XD; Xu, ZY; Pan, Z; Li, LH; Lin, YW; Ge, WK
      Optical properties and band lineup in GaNxAs1-x/GaAs single quantum wells

      JOURNAL OF INFRARED AND MILLIMETER WAVES
    72. Chen, F; Lu, HB; Zhao, T; Wang, RP; Zhou, YL; Chen, ZH; Yang, GZ
      High quality YBCO superconductive thin films fabricated by laser molecularbeam epitaxy

      SCIENCE IN CHINA SERIES A-MATHEMATICS PHYSICS ASTRONOMY
    73. Qu, B; Zheng, XH; Wang, YT; Feng, ZH; Han, JY; Liu, S; Lin, SM; Yang, H; Liang, JW
      Multiplicity factor and diffraction geometry factor for single crystal X-ray diffraction analysis and measurement of phase content in cubic GaN/GaAs(001) epilayers

      SCIENCE IN CHINA SERIES A-MATHEMATICS PHYSICS ASTRONOMY
    74. Zhu, CG; Xu, PS; Lu, ED; Xu, FQ; Pan, HB
      Influence of CH3CSNH2 passivation on interface diffusion between ferromagnetic metals and GaAs

      ACTA PHYSICA SINICA
    75. Burkhalter, R; Dohnke, I; Hulliger, J
      Growing of bulk crystals and structuring waveguides of fluoride materials for laser applications

      PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS
    76. Wohl, G; Kasper, E; Hackbarth, T; Kibbel, H; Klose, M; Ernst, F
      Fully relaxed Si0.7Ge0.3 buffers grown on patterned silicon substrates forhetero-CMOS transistors

      JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
    77. Morkoc, H
      III-Nitride semiconductor growth by MBE: Recent issues

      JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
    78. Jayaraj, MK
      Growth and characterization of Zn1-xMgxS thin films for electroluminescentapplications

      JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
    79. Krutogolov, YK; Kunakin, YI; Matyash, AA
      Effect of Te doping on electron traps in In0.5Ga0.5P

      JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
    80. As, DJ; Kohler, U
      Carbon - an alternative acceptor for cubic GaN

      JOURNAL OF PHYSICS-CONDENSED MATTER
    81. Zhang, XB; Taliercio, T; Kolliakos, S; Lefebvre, P
      Influence of electron-phonon interaction on the optical properties of III nitride semiconductors

      JOURNAL OF PHYSICS-CONDENSED MATTER
    82. Munoz, E; Monroy, E; Pau, JL; Calle, F; Omnes, F; Gibart, P
      III nitrides and UV detection

      JOURNAL OF PHYSICS-CONDENSED MATTER
    83. Xing, H; Keller, S; Wu, YF; McCarthy, L; Smorchkova, IP; Buttari, D; Coffie, R; Green, DS; Parish, G; Heikman, S; Shen, L; Zhang, N; Xu, JJ; Keller, BP; DenBaars, SP; Mishra, UK
      Gallium nitride based transistors

      JOURNAL OF PHYSICS-CONDENSED MATTER
    84. Tu, CW
      III-N-V low-bandgap nitrides and their device applications

      JOURNAL OF PHYSICS-CONDENSED MATTER
    85. Vasco, E; Zaldo, C; Vazquez, L
      Growth evolution of ZnO films deposited by pulsed laser ablation

      JOURNAL OF PHYSICS-CONDENSED MATTER
    86. Costantini, G; Rusponi, S; de Mongeot, FB; Boragno, C; Valbusa, U
      Periodic structures induced by normal-incidence sputtering on Ag(110) and Ag(001): flux and temperature dependence

      JOURNAL OF PHYSICS-CONDENSED MATTER
    87. Li, CL; Chen, ZH; Zhou, YL; Cui, DF
      Effect of oxygen content on the dielectric and ferroelectric properties oflaser-deposited BaTiO3 thin films

      JOURNAL OF PHYSICS-CONDENSED MATTER
    88. Koumetz, S; Ketata, K; Ihaddadene, M; Martin, P; Ketata, M; Dubois, C
      Comparative models for diffusion of Be in InGaAs/InP heterostructures

      JOURNAL OF PHYSICS-CONDENSED MATTER
    89. Desimoni, J; Sanchez, FH
      On the formation of pure and Pt-doped iron silicides using ball milling

      JOURNAL OF PHYSICS-CONDENSED MATTER
    90. Urbaszek, B; Morhain, C; Bradford, C; O'Donnell, CB; Telfer, SA; Tang, X; Balocchi, A; Prior, KA; Cavenett, BC; Townsley, CM; Nicholas, RJ
      Excitons with large binding energies in MgS/ZnSe/MgS and ZnMgS/ZnS/ZnMgS quantum wells

      JOURNAL OF PHYSICS-CONDENSED MATTER
    91. Condorelli, GG; Gennaro, S; Fragala, IL
      In-situ synthesis of the anhydrous La(hfac)(3) precursor: A viable route to the MOCVD of LaF3

      CHEMICAL VAPOR DEPOSITION
    92. Dziuba, Z; Gorska, M; Antoszewski, J; Babinski, A; Kozodoy, P; Keller, S; Keller, B; DenBaars, SP; Mishra, UK
      Quantum corrections to the electrical conduction in an AlGaN/GaN heterostructure

      APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
    93. Tung, RT
      Recent advances in Schottky barrier concepts

      MATERIALS SCIENCE & ENGINEERING R-REPORTS
    94. Bajaj, KK
      Use of excitons in materials characterization of semiconductor system

      MATERIALS SCIENCE & ENGINEERING R-REPORTS
    95. Morkoc, H
      Comprehensive characterization of hydride VPE grown GaN layers and templates

      MATERIALS SCIENCE & ENGINEERING R-REPORTS
    96. Hsu, JWP
      Near-field scanning optical microscopy studies of electronic and photonic materials and devices

      MATERIALS SCIENCE & ENGINEERING R-REPORTS
    97. Schlesinger, TE; Toney, JE; Yoon, H; Lee, EY; Brunett, BA; Franks, L; James, RB
      Cadmium zinc telluride and its use as a nuclear radiation detector material

      MATERIALS SCIENCE & ENGINEERING R-REPORTS
    98. Pulci, O; Ludge, K; Vogt, P; Esser, N; Schmidt, WG; Richter, W; Bechstedt, F
      First-principles study of InP and GaP(001) surfaces

      COMPUTATIONAL MATERIALS SCIENCE
    99. Yoshino, K; Mitani, N; Ikari, T; Fons, PJ; Niki, S; Yamada, A
      Optical properties of high-quality CuGaSe2 epitaxial layers examined by piezoelectric photoacoustic spectroscopy

      SOLAR ENERGY MATERIALS AND SOLAR CELLS
    100. Kawanami, H
      Heteroepitaxial technologies of III-V on Si

      SOLAR ENERGY MATERIALS AND SOLAR CELLS


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Documento generato il 04/08/20 alle ore 11:49:18