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La ricerca find articoli where soggetti phrase all words 'interface trap' sort by level,fasc_key/DESCEND, pagina_ini_num/ASCEND ha restituito 88 riferimenti
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    1. Yue, H; Zhu, JG; Guo, L; Zhang, ZF
      The deep-saturation study of drain current in SOI MOSFET's transfer characteristics

      ACTA PHYSICA SINICA
    2. Cheng, KG; Hess, K; Lyding, JW
      Deuterium passivation of interface traps in MOS devices

      IEEE ELECTRON DEVICE LETTERS
    3. Wang, B; Suehle, JS; Vogel, EM; Bernstein, JB
      Time-dependent breakdown of ultra-thin SiO2 gate dielectrics under pulsed biased stress

      IEEE ELECTRON DEVICE LETTERS
    4. Cheng, KG; Lee, JJ; Lyding, JW; Kim, YK; Kim, YW; Suh, KP
      Separation of hot-carrier-induced interface trap creation and oxide chargetrapping in PMOSFETs studied by hydrogen/deuterium isotope effect

      IEEE ELECTRON DEVICE LETTERS
    5. Lee, KK; Nishijima, T; Ohshima, T; Jamieson, DN
      Ion beam induced charge gate rupture of oxide on 6H-SiC

      NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
    6. Bravaix, A; Goguenheim, D; Revil, N; Vincent, E
      Hot-carrier reliability study of second and first impact ionization degradation in 0.15-mu m channel-length N-MOSFETS

      MICROELECTRONIC ENGINEERING
    7. Cheng, KG; Lee, J; Chen, Z; Shah, S; Hess, K; Lyding, JW; Kim, YK; Kim, YW; Suh, KP
      Deuterium pressure dependence of characteristics and hot-carrier reliability of CMOS devices

      MICROELECTRONIC ENGINEERING
    8. Devine, RAB; Herrera, GV
      Electric-field-induced transport of protons in amorphous SiO2 - art. no. 233406

      PHYSICAL REVIEW B
    9. Na, HJ; Jeong, JK; Um, MY; Kim, BS; Hwang, CS; Kim, HJ
      Effect of annealing on electrical properties of Pt/beta-SiC contact

      SOLID-STATE ELECTRONICS
    10. Mu, FC; Mao, LF; Wei, JL; Tan, CH; Xu, MZ
      An improved method for determining the critical energy for interface trap generation of n-MOSFETs under V-g = V-d/2 stress mode

      SOLID-STATE ELECTRONICS
    11. Mu, FC; Xu, MZ; Tan, CH
      A novel method for determining the effect of interface trap generation on the degradation of n-MOSFETs under different hot-carrier stress modes

      SOLID-STATE ELECTRONICS
    12. Vogel, EM; Edelstein, MD; Suehle, JS
      Defect generation and breakdown of ultrathin silicon dioxide induced by substrate hot-hole injection

      JOURNAL OF APPLIED PHYSICS
    13. Zhang, JF; Sii, HK; Groeseneken, G; Degraeve, R
      Hole trapping and trap generation in the gate silicon dioxide

      IEEE TRANSACTIONS ON ELECTRON DEVICES
    14. Gaffey, B; Guido, LJ; Wang, XW; Ma, TP
      High-quality oxide/nitride/oxide gate insulator for GaN MIS structures

      IEEE TRANSACTIONS ON ELECTRON DEVICES
    15. Melik-Martirosian, A; Ma, TP
      Lateral profiling of interface traps and oxide charge in MOSFET devices: Charge pumping versus DCIV

      IEEE TRANSACTIONS ON ELECTRON DEVICES
    16. Das, NR; Deen, MJ
      Low-bias performance of avalanche photodetector - A time-domain approach

      IEEE JOURNAL OF QUANTUM ELECTRONICS
    17. Houssa, M; Stesmans, A; Carter, RJ; Heyns, MM
      Stress-induced leakage current in ultrathin SiO2 layers and the hydrogen dispersive transport model

      APPLIED PHYSICS LETTERS
    18. Takahashi, M; Nakashima, S; Kodate, J; Ohno, T
      Characterization of the interface between the top Si and buried oxide in separation by implanted oxygen wafers

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    19. Higashi, S; Abe, D; Inoue, S; Shimoda, T
      Low-temperature formation of device-quality SiO2/Si interfaces using electron cyclotron resonance plasma-enhanced chemical vapor deposition

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    20. Chang, WJ; Houng, MP; Wang, YF
      Trap concentration dependence on the electrical properties of annealed ultrathin fluorinated silicon oxides

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    21. Lun, Z; Ang, DS; Ling, CH
      A novel subthreshold slope technique for the extraction of the buried-oxide interface trap density in fully depleted SOI MOSFET

      IEEE ELECTRON DEVICE LETTERS
    22. Song, HW; Lee, CS; Kim, DG; No, K
      Characterization of CeO2 thin films as insulator of metal ferroelectric insulator semiconductor (MFIS) structures

      THIN SOLID FILMS
    23. Mizsei, J
      Determination of SiO2-Si interface trap level density (D-it) by vibrating capacitor method

      SOLID-STATE ELECTRONICS
    24. Ristic, GS; Pejovic, MM; Jaksic, AB
      Analysis of postirradiation annealing of n-channel power vertical double-diffused metal-oxide-semiconductor transistors

      JOURNAL OF APPLIED PHYSICS
    25. Bunson, PE; Di Ventra, M; Pantelides, ST; Fleetwood, DM; Schrimpf, RD
      Hydrogen-related defects in irradiated SiO2

      IEEE TRANSACTIONS ON NUCLEAR SCIENCE
    26. Shaneyfelt, MR; Schwank, JR; Witczak, SC; Fleetwood, DM; Pease, RL; Winokur, PS; Riewe, LC; Hash, GL
      Thermal-stress effects and enhanced low dose rate sensitivity in linear bipolar ICs

      IEEE TRANSACTIONS ON NUCLEAR SCIENCE
    27. Jaksic, AB; Pejovic, MM; Ristic, GS
      Isothermal and isochronal annealing experiments on irradiated commercial power VDMOSFETs

      IEEE TRANSACTIONS ON NUCLEAR SCIENCE
    28. Yi, WC; Seo, CS; Kwun, SI; Yoon, JG
      Temperature dependence of capacitance/current-voltage characteristics of highly (0001)-oriented YMnO3 thin films on Si

      APPLIED PHYSICS LETTERS
    29. Yamaguchi, M; Hiraki, K; Nagatomo, T; Masuda, Y
      Preparation and properties of Bi2SiO5/Si structures

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    30. Sakamoto, K; Sameshima, T
      Passivation of SiO2/Si interfaces using high-pressure-H2O-vapor heating

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    31. Ueno, T; Morioka, A; Chikamura, S; Iwasaki, Y
      Low-temperature and low-activation-energy process for the gate oxidation of Si substrates

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    32. Alexe, M; Senz, S; Pignolet, A; Hesse, D; Gosele, U
      Direct wafer bonding and layer transfer for ferroelectric thin film integration

      INTEGRATED FERROELECTRICS
    33. Ang, DS; Ling, CH
      A new model for the post-stress interface trap generation in hot-carrier stressed P-MOSFET's

      IEEE ELECTRON DEVICE LETTERS
    34. Groeseneken, G; Degraeve, R; Nigam, T; Van den Bosch, G; Maes, HE
      Hot carrier degradation and time-dependent dielectric breakdown in oxides

      MICROELECTRONIC ENGINEERING
    35. Stahlbush, RE
      The effects of radiation-induced defects on H+ transport in SiO2

      MICROELECTRONIC ENGINEERING
    36. Yeh, KL; Jeng, MJ; Hwu, JG
      Fluorinated thin gate oxides prepared by room temperature deposition followed by furnace oxidation

      SOLID-STATE ELECTRONICS
    37. Fleetwood, DM; Reber, RA; Riewe, LC; Winokur, PS
      Thermally stimulated current in SiO2

      MICROELECTRONICS RELIABILITY
    38. Betty, CA; Girija, KG; Lal, R
      Relaxation of operational amplifier parameters after pulsed electron beam irradiation

      MICROELECTRONICS RELIABILITY
    39. Bunson, PE; Di Ventra, M; Pantelides, ST; Schrimpf, RD; Galloway, KF
      Ab initio calculations of H+ energetics in SiO2: Implications for transport

      IEEE TRANSACTIONS ON NUCLEAR SCIENCE
    40. Shin, YH; Min, KW; Rhee, JG; Lee, DH; Kim, SH; Kim, HS; Park, SD; Sung, DK; Choi, SD
      Analysis of anomalous TDE data on-board the KITSAT-1

      IEEE TRANSACTIONS ON NUCLEAR SCIENCE
    41. Irrera, F; Russo, F
      Enhanced injection in n(++)-poly/SiOx/SiO2/p-sub MOS capacitors for low-voltage nonvolatile memory applications: Experiment

      IEEE TRANSACTIONS ON ELECTRON DEVICES
    42. Alexe, M; Senz, S; Pignolet, A; Hesse, D; Gosele, U
      Direct wafer bonding and layer transfer - a new approach to integration offerroelectric oxides into silicon technology

      FERROELECTRICS
    43. Alexe, M; Senz, ST; Pignolet, A; Hesse, D; Gosele, U
      Structural and electrical properties of metal-ferroelectric-silicon heterostructure fabricated by a direct wafer bonding and layer transfer process

      FERROELECTRICS
    44. Khosru, QDM; Uddin, MN; Khan, MR
      Effective lifetime of electrons trapped in the oxide of a metal-oxide-semiconductor structure

      APPLIED PHYSICS LETTERS
    45. Jie, BB; Ng, KH; Li, MF; Lo, KF
      Correlation between charge pumping method and direct-current current voltage method in p-type metal-oxide-semiconductor field-effect transistors

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    46. Shi, Y; Saito, K; Ishikuro, H; Hiramoto, T
      Effects of interface traps on charge retention characteristics in silicon-quantum-dot-based metal-oxide-semiconductor diodes

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    47. Yoshikawa, M; Ohshima, T; Itoh, H; Nashiyama, I; Takahashi, Y; Ohnishi, K; Okumura, H; Yoshida, S
      Effects of gamma-ray irradiation on the electrical characteristics of SiC metal-oxide-semiconductor structures

      ELECTRONICS AND COMMUNICATIONS IN JAPAN PART II-ELECTRONICS
    48. Krasnov, AN
      Alternating-current thin-film electro-luminescent devices: Effect of fabrication conditions on aging and failure defect formation

      PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS
    49. LEE SH; BAE SH; LEE HC; KIM CK
      SURFACE-TREATMENT EFFECTS ON THE ELECTRICAL-PROPERTIES OF THE INTERFACES BETWEEN ZNS AND LPE-GROWN HG0.7CD0.3TE

      Journal of electronic materials
    50. ZHAO W; WAECHTER D; ROWLANDS JA
      DIGITAL RADIOLOGY USING ACTIVE-MATRIX READOUT OF AMORPHOUS SELENIUM -RADIATION HARDNESS OF CADMIUM SELENIDE THIN-FILM TRANSISTORS

      Medical physics
    51. GLADSTONE SM; DUMIN DJ
      THICKNESS DEPENDENCE OF THIN OXIDE WEAROUT

      Solid-state electronics
    52. GROESENEKEN G; MAES HE
      BASICS AND APPLICATIONS OF CHARGE-PUMPING IN SUBMICRON MOSFETS (REPRINTED FROM 21ST-INTERNATIONAL-CONFERENCE-ON-MICROELECTRONICS, VOL 2, PG581-589, 1997)

      Microelectronics and reliability
    53. PEJOVIC M; JAKSIC A; RISTIC G
      THE BEHAVIOR OF RADIATION-INDUCED GATE-OXIDE DEFECTS IN MOSFETS DURING ANNEALING AT 140-DEGREES-C

      Journal of non-crystalline solids
    54. CHEN C; WILSON WL; SMAYLING M
      TUNNELING INDUCED CHARGE GENERATION IN SIO2 THIN-FILMS

      Journal of applied physics
    55. SUBBARAMAN S; SHARMA DK; VASI J; DAS A
      A MONTE-CARLO APPROACH FOR INCORPORATION OF MEMORY EFFECT IN SWITCHEDGATE BIAS EXPERIMENTS

      Journal of applied physics
    56. Stahlbush, RE; Lawrence, RK; Hughes, HL
      H+ motion in SiO2: Incompatible results from hydrogen-annealing and radiation models

      IEEE TRANSACTIONS ON NUCLEAR SCIENCE
    57. PARK YB; SCHRODER DK
      DEGRADATION OF THIN TUNNEL GATE OXIDE UNDER CONSTANT FOWLER-NORDHEIM CURRENT STRESS FOR A FLASH EEPROM

      I.E.E.E. transactions on electron devices
    58. YOSHINO A; MA TP; OKUMURA K
      FRONT-AND BACK-INTERFACE TRAP DENSITIES AND SUBTHRESHOLD SWINGS OF FULLY DEPLETED MODE METAL-OXIDE-SEMICONDUCTOR TRANSISTORS FABRICATED ON SEPARATION-BY-IMPLANTED-OXYGEN SUBSTRATES

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    59. PARK DG; MOHAMMAD SN; CHEN Z; MORKOC H
      METAL-INSULATOR-SEMICONDUCTOR STRUCTURE ON GAAS USING A PSEUDOMORPHICSI GAP INTERLAYER/

      Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena
    60. PEJOVIC M; JAKSIC A; RISTIC G; BALJOSEVIC B
      PROCESSES IN N-CHANNEL MOSFETS DURING POSTIRRADIATION THERMAL ANNEALING

      Radiation physics and chemistry
    61. YOSHIKAWA M; NEMOTO N; ITOH H; NASHIYAMA I; OKUMURA H; MISAWA S; YOSHIDA S
      THERMAL ANNEALING OF INTERFACE TRAPS AND TRAPPED CHARGES INDUCED BY IRRADIATION IN OXIDES OF 3C-SIC METAL-OXIDE-SEMICONDUCTOR STRUCTURES

      Materials science & engineering. B, Solid-state materials for advanced technology
    62. GOLZ A; GROSS S; JANSSEN R; VONKAMIENSKI ES; KURZ H
      ELECTRICAL-PROPERTIES OF OXIDES ON SILICON-CARBIDE GROWN BY REMOTE PLASMA CHEMICAL-VAPOR-DEPOSITION ANNEALED IN DIFFERENT GAS AMBIENTS

      Materials science & engineering. B, Solid-state materials for advanced technology
    63. SAKODA T; MATSUMURA M; NISHIOKA Y
      EFFECTS OF POST-OXIDATION ANNEALING ON 3NM-THICK LOW-TEMPERATURE-GROWN GATE OXIDE

      Applied surface science
    64. FOURCHES NT
      CHARGE BUILDUP BY IRRADIATION IN METAL-OXIDE-SEMICONDUCTOR STRUCTURESAT CRYOGENIC TEMPERATURES - BASIC MECHANISMS AND INFLUENCE OF DOSE AND DOSE-RATE

      Physical review. B, Condensed matter
    65. ELHDIY A; SALACE G; JOURDAIN M; MEINERTZHAGEN A; VUILLAUME D
      STRESS-FIELD POLARITY EFFECT ON DEFECTS GENERATION IN THIN SILICON DIOXIDE FILMS

      Thin solid films
    66. KANITZ S
      CHARGE-TRANSPORT IN THICK SIO2-BASED DIELECTRIC LAYERS

      Solid-state electronics
    67. DIMITRIJEV S; TANNER P; YAO ZQ; HARRISON HB
      SLOW STATE CHARACTERIZATION BY MEASUREMENTS OF CURRENT-VOLTAGE CHARACTERISTICS OF MOS CAPACITORS

      Microelectronics and reliability
    68. VANHEUSDEN K; WARREN WL; DEVINE RAB
      H+ AND D+ ASSOCIATED CHARGE BUILDUP DURING ANNEALING OF SI SIO2/SI STRUCTURES/

      Journal of non-crystalline solids
    69. PARK DG; LI D; TAO M; FAN ZF; BOTCHKAREV AE; MOHAMMAD SN; MORKOC H
      SI3N4 SI/IN0.05GA0.95AS/N-GAAS METAL-INSULATOR-SEMICONDUCTOR DEVICES/

      Journal of applied physics
    70. VANHEUSDEN K; DEVINE RAB; SCHWANK JR; FLEETWOOD DM; POLCAWICH RG; WARREN WL; KARNA SP; PUGH RD
      IRRADIATION RESPONSE OF MOBILE PROTONS IN BURIED SIO2-FILMS

      IEEE transactions on nuclear science
    71. OGAWA S; KOBAYASHI T; NAKAYAMA S; SAKAKIBARA Y
      EVALUATION OF HOT-HOLE-INDUCED INTERFACE TRAPS AT THE TUNNEL-SIO2 (3.5NM) SI INTERFACE BY THE CONDUCTANCE TECHNIQUE

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    72. SAMESHIMA T; SATOH M
      IMPROVEMENT OF SIO2 PROPERTIES BY HEATING TREATMENT IN HIGH-PRESSURE H2O VAPOR

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    73. ROH YH; KIM K; JUNG DG
      THE HYSTERESIS CAUSED BY INTERFACE-TRAP AND ANOMALOUS POSITIVE CHARGEIN AL CEO2-SIO2/SILICON CAPACITORS/

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    74. KWAK DH; JANG BT; CHA SY; LEE SH; LEE HC; YU BG
      HYSTERESIS ANALYSIS IN CAPACITANCE-VOLTAGE CHARACTERISTICS OF PT (BA,SR)TIO3/PT STRUCTURES/

      Integrated ferroelectrics
    75. JAKSIC A; RISTIC G; PEJOVIC M
      ANALYSIS OF THE PROCESSES IN POWER MOSFETS DURING GAMMA-RAY IRRADIATION AND SUBSEQUENT THERMAL ANNEALING

      Physica status solidi. a, Applied research
    76. ACOVIC A; LAROSA G; SUN YC
      A REVIEW OF HOT-CARRIER DEGRADATION MECHANISMS IN MOSFETS

      Microelectronics and reliability
    77. DUMIN DJ
      THICKNESS DEPENDENCE OF OXIDE WEAROUT

      Journal of the Electrochemical Society
    78. PEJOVIC M; GOLUBOVIC S; RISTIC G
      TEMPERATURE-INDUCED REBOUND IN AL-GATE NMOS TRANSISTORS

      IEE proceedings. Circuits, devices and systems
    79. MASUI S; NAKAJIMA T; KAWAMURA K; YANO T; HAMAGUCHI I; TACHIMORI M
      EVALUATION OF FIXED CHARGE AND INTERFACE-TRAP DENSITIES IN SIMOX WAFERS AND THEIR EFFECTS ON DEVICE CHARACTERISTICS

      IEICE transactions on electronics
    80. MONDOT E; DAVID JP
      PREVIEW OF CMOS TECHNOLOGY ELECTRONIC COM PONENTS DEGRADATION IN-SPACE ENVIRONMENT

      La Recherche aerospatiale
    81. TALWALKAR N; DAS A; VASI J
      DISPERSIVE TRANSPORT OF CARRIERS UNDER NONUNIFORM ELECTRIC-FIELD

      Journal of applied physics
    82. LATHI S; DAS A
      SEMINUMERICAL SIMULATION OF DISPERSIVE TRANSPORT IN THE OXIDE OF METAL-OXIDE-SEMICONDUCTOR DEVICES

      Journal of applied physics
    83. KANG TK; UENG SY; DAI BT; CHEN LP; CHENG HC
      EFFECTS OF POLYSILICON ELECTRON-CYCLOTRON-RESONANCE ETCHING ON ELECTRICAL CHARACTERISTICS OF GATE OXIDES

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    84. HOLMESSIEDLE A
      PREDICTING END-OF-LIFE PERFORMANCE OF MICROELECTRONICS IN-SPACE

      Radiation physics and chemistry
    85. HELMS CR; POINDEXTER EH
      THE SILICON SILICON-DIOXIDE SYSTEM - ITS MICROSTRUCTURE AND IMPERFECTIONS

      Reports on progress in physics
    86. MORAGUES JM; CIANTAR E; JERISIAN R; SAGNES B; OUALID J
      SURFACE-POTENTIAL DETERMINATION IN METAL-OXIDE-SEMICONDUCTOR CAPACITORS

      Journal of applied physics
    87. RENDELL RW
      ROLE OF DYNAMICAL COOPERATIVITY FOR AN ENHANCED ISOTOPE EFFECT DURINGTRANSPORT

      Journal of applied physics
    88. LYU JS; NAM KS; LEE CC
      DETERMINATION OF THE INTERFACE-TRAP DENSITY IN METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR THROUGH SUBTHRESHOLD SLOPE MEASUREMENT

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS


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Documento generato il 01/06/20 alle ore 07:41:56