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La ricerca find articoli where soggetti phrase all words 'hydrogenated amorphous silicon' sort by level,fasc_key/DESCEND, pagina_ini_num/ASCEND ha restituito 842 riferimenti
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    1. Fritzsche, H
      Development in understanding and controlling the Staebler-Wronski effect in a-Si : H

      ANNUAL REVIEW OF MATERIALS RESEARCH
    2. Celasco, M; Eggenhoffner, R
      Universality of a dynamical percolative approach to 1/f(gamma) noise

      EUROPEAN PHYSICAL JOURNAL B
    3. Brandt, MS; Goennenwein, STB; Stutzmann, M
      Spin-dependent electronic noise

      PHYSICA E
    4. Kon'kov, IO; Kuznetsov, AN; Pak, PE; Terukov, EI; Granitsyna, LS
      Erbium electroluminescence in an Al/a-Si : H(Er)/p-c-Si/Al heterostructure

      TECHNICAL PHYSICS LETTERS
    5. Lysenko, VS; Tyagulskii, IP; Osiyuk, IN; Nazarov, AN; Vovk, YN; Gomenyuk, YV; Terukov, EI; Kon'kov, OI
      Effect of erbium on electronic traps in PECVD-grown a-Si : H(Er)/c-Si structures

      SEMICONDUCTORS
    6. Kuznetsov, SV; Terukov, EI
      Influence of a-Si : H band tails on the occupation of dangling-bond statesand on photoconductivity

      SEMICONDUCTORS
    7. Kuznetsov, SV
      Numerical calculation of the temperature dependences of photoconductivity in the p-type a-Si : H

      SEMICONDUCTORS
    8. Kon'kov, OI; Terukov, EI; Granitsyna, LS
      Effect of doping with nitrogen on electrical properties and erbium electroluminescence of a-Si : H(Er) films

      SEMICONDUCTORS
    9. Golubev, VG; Dukin, AA; Medvedev, AV; Pevtsov, AB; Sel'kin, AV; Feoktistov, NA
      Fabry-Perot a-Si : H/a-SiOx : H microcavities with an erbium-doped a-Si : H active layer

      SEMICONDUCTORS
    10. Giovine, E; Notargiacomo, A; Di Gaspare, L; Palange, E; Evangelisti, F; Leoni, R; Castellano, G; Torrioli, G; Foglietti, V
      Investigation of SiGe-heterostructure nanowires

      NANOTECHNOLOGY
    11. Kodolbas, AO; Eray, A; Oktu, O
      Effect of light-induced metastable defects on photocarrier lifetime

      SOLAR ENERGY MATERIALS AND SOLAR CELLS
    12. Hamma, S; Cabarrocas, PRI
      Low-temperature growth of thick intrinsic and ultrathin phosphorous or boron-doped microcrystalline silicon films: Optimum crystalline fractions for solar cell applications

      SOLAR ENERGY MATERIALS AND SOLAR CELLS
    13. Okamoto, S; Maruyama, E; Terakawa, A; Shinohara, W; Nakano, S; Hishikawa, Y; Wakisaka, K; Kiyama, S
      Towards large-area, high-efficiency a-Si/a-SiGe tandem solar cells

      SOLAR ENERGY MATERIALS AND SOLAR CELLS
    14. Nishimoto, T; Takagi, T; Kondo, M; Matsuda, A
      Effect of halogen additives on the stability of a-Si : H films deposited at a high-growth rate

      SOLAR ENERGY MATERIALS AND SOLAR CELLS
    15. Shimizu, T; Sugiyama, H; Kumeda, M
      A large discrepancy between CPM and ESR defect densities in light-soaked a-Si : H

      SOLAR ENERGY MATERIALS AND SOLAR CELLS
    16. Fujiwara, H; Toyoshima, Y; Kondo, M; Matsuda, A
      Application of real-time in situ spectroscopic ellipsometry and infrared spectroscopy for characterizing interface structure of a-Si : H layer

      SOLAR ENERGY MATERIALS AND SOLAR CELLS
    17. Jiao, L; Niu, X; Lu, Z; Wronski, CR; Matsuda, A; Kamei, T; Ganguly, G
      A new perspective on the characterization of materials for a-Si : H solar cells

      SOLAR ENERGY MATERIALS AND SOLAR CELLS
    18. Kitao, J; Harada, H; Yoshida, N; Kasuya, Y; Nishio, M; Sakamoto, T; Itoh, T; Nonomura, S; Nitta, S
      Absorption coefficient spectra of mu c-Si in the low-energy region 0.4-1.2eV

      SOLAR ENERGY MATERIALS AND SOLAR CELLS
    19. Masuda, A; Niikura, C; Ishibashi, Y; Matsumura, H
      Dominant parameter determining dangling-bond density in hydrogenated amorphous silicon films prepared by catalytic chemical vapor deposition

      SOLAR ENERGY MATERIALS AND SOLAR CELLS
    20. Sakikawa, N; Shishida, Y; Miyazaki, S; Hirose, M
      High-rate deposition of hydrogenated amorphous silicon films using inductively coupled silane plasma

      SOLAR ENERGY MATERIALS AND SOLAR CELLS
    21. Wang, YH; Lin, J; Huan, CHA; Feng, ZC; Chua, SJ
      Post-growth rapid thermal annealing effect on hydrogenated amorphous silicon carbide thin film

      DIAMOND AND RELATED MATERIALS
    22. Honer, KA; Kovacs, GTA
      Integration of sputtered silicon microstructures with pre-fabricated CMOS circuitry

      SENSORS AND ACTUATORS A-PHYSICAL
    23. Shibamoto, K; Katayama, K; Fujinami, M; Sawada, T
      Detection using transient reflecting grating spectroscopy for the ultrafast interaction between photoexcited electrons and adsorbed molecules at a gold surface

      ANALYTICAL SCIENCES
    24. Pant, A; Russell, TWF; Huff, MC; Aparicio, R; Birkmire, RW
      Hot-wire chemical vapor deposition of silicon from silane: Effect of process conditions

      INDUSTRIAL & ENGINEERING CHEMISTRY RESEARCH
    25. Pant, A; Huff, MC; Russell, TWF
      Reactor and reaction model for the hot-wire chemical vapor deposition of silicon from silane

      INDUSTRIAL & ENGINEERING CHEMISTRY RESEARCH
    26. Kessels, WMM; Leroux, A; Boogaarts, MGH; Hoefnagels, JPM; van de Sanden, MCM; Schram, DC
      Cavity ring down detection of SiH3 in a remote SiH4 plasma and comparison with model calculations and mass spectrometry

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
    27. Cicala, G; Capezzuto, P; Bruno, G
      Microcrystalline silicon by plasma enhanced chemical vapor deposition fromsilicon tetrafluoride

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
    28. Abay, B; Guder, HS; Efeoglu, H; Yogurtcu, YK
      Urbach-Martienssen tails in the absorption spectra of layered ternary semiconductor TlGaS2

      PHYSICA STATUS SOLIDI B-BASIC RESEARCH
    29. Delerue, C; Lannoo, M; Allan, G
      Tight binding for complex semiconductor systems

      PHYSICA STATUS SOLIDI B-BASIC RESEARCH
    30. Ohmori, T; Go, H; Yamaguchi, N; Nakayama, A; Mametsuka, H; Suzuki, E
      Photovoltaic water electrolysis using the sputter-deposited a-Si/c-Si solar cells

      INTERNATIONAL JOURNAL OF HYDROGEN ENERGY
    31. Suchaneck, G; Norkus, V; Gerlach, G
      Low-temperature PECVD-deposited silicon nitride thin films for sensor applications

      SURFACE & COATINGS TECHNOLOGY
    32. Kruger, T; Sax, AF
      Distorted silicon hydrides - A comparative study with various density functionals

      JOURNAL OF COMPUTATIONAL CHEMISTRY
    33. Wang, Y; Yue, RF; Li, GH; Han, HX; Liao, XB
      Microstructure and photoluminescence properties of as-deposited and annealed Si-rich a-Si1-xCx : H films

      APPLIED SURFACE SCIENCE
    34. Stamate, MD
      Strong dependence of IR absorption in a-SiC : H dc magnetron sputtered thin films on H-2 partial pressure

      APPLIED SURFACE SCIENCE
    35. Kounavis, P
      Analysis of the modulated photocurrent experiment - art. no. 045204

      PHYSICAL REVIEW B
    36. Martinez, FL; del Prado, A; Martil, I; Gonzalez-Diaz, G; Bohne, W; Fuhs, W; Rohrich, J; Selle, B; Sieber, I
      Molecular models and activation energies for bonding rearrangement in plasma-deposited alpha-SiNx : H dielectric thin films treated by rapid thermal annealing - art. no. 245320

      PHYSICAL REVIEW B
    37. Balberg, I; Naidis, R; Fonseca, LF; Weisz, SZ; Conde, JP; Alpuim, P; Chu, V
      Sensitization of the electron lifetime in a-Si : H: The story of oxygen - art. no. 113201

      PHYSICAL REVIEW B
    38. Fujiwara, H; Kondo, M; Matsuda, A
      Real-time spectroscopic ellipsometry studies of the nucleation and grain growth processes in microcrystalline silicon thin films - art. no. 115306

      PHYSICAL REVIEW B
    39. Onischuk, AA; Panfilov, VN
      Mechanism of thermal decomposition of silanes

      USPEKHI KHIMII
    40. Gallagher, A
      Some physics and chemistry of hot-wire deposition

      THIN SOLID FILMS
    41. Duan, HL; Zaharias, GA; Bent, SF
      The effect of filament temperature on the gaseous radicals in the hot wiredecomposition of silane

      THIN SOLID FILMS
    42. Hatano, T; Nakae, Y; Mori, H; Ohkado, K; Yoshida, N; Nonomura, S; Itoh, M; Masuda, A; Matsumura, H
      Photo-induced volume changes in a-Si : H films prepared by Cat-CVD method

      THIN SOLID FILMS
    43. Masuda, A; Matsumura, H
      Guiding principles for device-grade hydrogenated amorphous silicon films and design of catalytic chemical vapor deposition apparatus

      THIN SOLID FILMS
    44. Dusane, RO; Bauer, S; Schroder, B; Oechsner, H
      Is the nucleation and coalescence behavior in the growth of a-Si : H filmsprepared by the CAT-CVD different?

      THIN SOLID FILMS
    45. Han, DX; Yue, GZ; Habuchi, H; Iwaniczko, E; Wang, Q
      Electronic states and the light-induced metastability in hydrogenated amorphous silicon prepared by hot-wire CVD

      THIN SOLID FILMS
    46. Itoh, M; Ishibashi, Y; Masuda, A; Matsumura, H
      High-stability hydrogenated amorphous silicon films for light-soaking prepared by catalytic CVD at high deposition rates

      THIN SOLID FILMS
    47. Imamori, K; Masuda, A; Matsumura, H
      Influence of a-Si : H deposition by catalytic CVD on transparent conducting oxides

      THIN SOLID FILMS
    48. Nelson, BP; Iwaniczko, E; Mahan, AH; Wang, Q; Xu, YQ; Crandall, RS; Branz, HM
      High-deposition rate a-Si : H n-i-p solar cells grown by HWCVD

      THIN SOLID FILMS
    49. Sakai, M; Tsutsumi, T; Yoshioka, T; Masuda, A; Matsumura, H
      High performance amorphous-silicon thin film transistors prepared by catalytic chemical vapor deposition with high deposition rate

      THIN SOLID FILMS
    50. Ong, CW; Chan, KF; Choy, CL
      Optical absorption and transport mechanisms of dual ion-beam-deposited boron-rich boron nitride films

      THIN SOLID FILMS
    51. Wang, YH; Lin, JY; Huan, CHA; Feng, ZC; Chua, SJ
      High temperature annealing of hydrogenated amorphous silicon carbide thin films

      THIN SOLID FILMS
    52. Kessels, WMM; Smets, AHM; Marra, DC; Aydil, ES; Schram, DC; van de Sanden, MCM
      On the growth mechanism of a-Si : H

      THIN SOLID FILMS
    53. Cherfi, R; Farhi, G; Aoucher, M; Zellama, K
      Hydrogenated amorphous silicon deposited by DC magnetron sputtering at high temperature

      THIN SOLID FILMS
    54. Kuznetsov, SV
      New feature of the photoconductivity in p-type a-Si : H: independence of photoconductivity of p-type a-Si : H films on doping level and defect concentration

      THIN SOLID FILMS
    55. Laihem, K; Cherfi, R; Aoucher, M
      Hydrogen interaction on metal/hydrogenated amorphous silicon Schottky structures: adsorption/desorption effects

      THIN SOLID FILMS
    56. Zhao, YP; Drotar, JT; Wang, GC; Lu, TM
      Morphology transition during low-pressure chemical vapor deposition - art.no. 136102

      PHYSICAL REVIEW LETTERS
    57. Ho, WY; Surya, C
      Study of light-induced annealing effects in a-Si : H thin films

      MICROELECTRONICS RELIABILITY
    58. Pantchev, B; Danesh, P; Savatinova, I; Liarokapis, E; Schmidt, B; Grambole, D
      The etfect of structural disorder on mechanical stress in a-Si : H films

      JOURNAL OF PHYSICS D-APPLIED PHYSICS
    59. Ozdemir, O; Atilgan, I; Katircioglu, B
      Instability evolution within a-SiNx film assessed through MIS structure under bias and temperature stresses

      JOURNAL OF NON-CRYSTALLINE SOLIDS
    60. Wang, CL; Kobayashi, Y; Togashi, H; Hirata, K; Suzuki, R; Ohdaira, T; Mikado, T; Hishita, S
      Variable-energy positron lifetime study of silicon-oxide films plasma deposited from hexamethyldisiloxane and oxygen mixtures

      JOURNAL OF APPLIED POLYMER SCIENCE
    61. Baeri, P; Malvezzi, AM; Reitano, R
      Photoluminescence yield and decay time of proton irradiated and thermally annealed a-Si0.35C0.65 : H alloys: A phenomenological model

      JOURNAL OF APPLIED PHYSICS
    62. Mahan, AH; Xu, Y; Williamson, DL; Beyer, W; Perkins, JD; Vanecek, M; Gedvilas, LM; Nelson, BP
      Structural properties of hot wire a-Si : H films deposited at rates in excess of 100 A/s

      JOURNAL OF APPLIED PHYSICS
    63. Schon, JH; Bao, ZA
      Influence of disorder on the electron transport properties in fluorinated copper-phthalocyanine thin films

      JOURNAL OF APPLIED PHYSICS
    64. Das, D; Jana, M; Barua, AK
      Heterogeneity in microcrystalline-transition state: Origin of Si-nucleation and microcrystallization at higher rf power from Ar-diluted SiH4 plasma

      JOURNAL OF APPLIED PHYSICS
    65. Widenhorn, R; Mundermann, L; Rest, A; Bodegom, E
      Meyer-Neldel rule for dark current in charge-coupled devices

      JOURNAL OF APPLIED PHYSICS
    66. Murley, D; Young, N; Trainor, M; McCulloch, D
      An investigation of laser annealed and metal-induced crystallized polycrystalline silicon thin-film transistors

      IEEE TRANSACTIONS ON ELECTRON DEVICES
    67. Ichinose, H; Nozaki, H; Miyagawa, R; Yamaguchi, T; Furukawa, A
      Light-soaking effects on a-Si : H photodiodes deposited by the laminar-flow photo-CVD method

      IEEE TRANSACTIONS ON ELECTRON DEVICES
    68. Cheong, HM; Lee, SH; Nelson, B; Mascarenhas, A; Deb, SK
      Evidence for light-induced long-range hydrogen motion in a-Si : H using Raman scattering of a-WO3

      ELECTROCHIMICA ACTA
    69. Walch, SP; Ramalingam, S; Sriraman, S; Aydil, ES; Maroudas, D
      Mechanisms and energetics of SiH3 adsorption on the pristine Si(001)-(2 x 1) surface

      CHEMICAL PHYSICS LETTERS
    70. Duan, HL; Zaharias, GA; Bent, SF
      Probing radicals in hot wire decomposition of silane using single photon ionization

      APPLIED PHYSICS LETTERS
    71. Matsumoto, Y; Yu, ZR
      P-type polycrystalline Si films prepared by aluminum-induced crystallization and doping method

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    72. Shimizu, T; Maehara, T; Mitani, M; Kumeda, M
      Partial recovery of photodegradation at room temperature in hydrogenated amorphous silicon

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    73. Shimizu, T; Shimada, M; Kumeda, M
      Photocreated defects in very thin hydrogenated amorphous silicon films

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    74. Chim, WK; Leong, KK; Choi, WK
      Random telegraphic signals and low-frequency noise in rapid-thermal-annealed silicon-silicon oxide structures

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    75. Shimizu, T; Shimada, M; Sugiyama, H; Kumeda, M
      Relation between electron-spin-resonance and constant-photocurrent-method defect densities in hydrogenated amorphous silicon

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    76. Huang, CY; Teng, TH; Yang, CJ; Tseng, CH; Cheng, HC
      Effect of temperature and illumination on the instability of a-Si : H thin-film transistors under AC gate bias stress

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    77. Aiyer, HN; Nishioka, D; Maruyama, R; Shinno, H; Matsuki, N; Miyazaki, K; Fujioka, H; Koinuma, H
      Combinatorial fabrication process for a-Si : H thin film transistors

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    78. Overhof, H; Thomas, P
      The statistical shift model for the Meyer-Neldel rule

      MEYER-NELDEL RULE
    79. Hu, J; Snell, AJ; Hajto, J; Owen, AE
      Current-induced instability in Cr-p(+) a-Si : H-V thin film devices

      PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICSELECTRONIC OPTICAL AND MAGNETIC PROPERTIES
    80. Giorgis, F; Vinegoni, C; Pavesi, L
      Optical absorption and photoluminescence properties of alpha-Si1-xNx : H films deposited by plasma-enhanced CVD

      PHYSICAL REVIEW B
    81. Vanmaekelbergh, D; de Jongh, PE
      Electron transport in disordered semiconductors studied by a small harmonic modulation of the steady state

      PHYSICAL REVIEW B
    82. Fujiwara, H; Koh, J; Rovira, PI; Collins, RW
      Assessment of effective-medium theories in the analysis of nucleation and microscopic surface roughness evolution for semiconductor thin films

      PHYSICAL REVIEW B
    83. Sinha, AK; Agarwal, SC
      Comparison of the potential fluctuations in a-Si : H measured by the optical and transport methods

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    84. Kuznetsov, SV
      The Staebler-Wronski effect and temperature dependences of photoconductivity in p-type a-Si : H

      SEMICONDUCTORS
    85. Kurova, IA; Larina, EV; Ormont, NN
      Special features of relaxation of metastable states induced thermally and by photoexcitation in (a-Si : H): P films

      SEMICONDUCTORS
    86. Gallagher, A
      Model of particle growth in silane discharges

      PHYSICAL REVIEW E
    87. Kuz'min, GP; Karasev, ME; Khokhlov, EM; Kononov, NN; Korovin, SB; Plotnichenko, VG; Polyakov, SN; Pustovoy, VI; Tikhonevitch, OV
      Nanosize silicon powders: The structure and optical properties

      LASER PHYSICS
    88. von Keudell, A
      Surface processes during thin-film growth

      PLASMA SOURCES SCIENCE & TECHNOLOGY
    89. Arkhipov, VI; Emelianova, EV; Adriaenssens, GJ
      Variable-range hopping within a fluctuating potential landscape

      JOURNAL OF PHYSICS-CONDENSED MATTER
    90. Prentice, JSC
      Computer simulation of the effect of phosphorous doping of the i-layer in a thin-film a-Si : H p-i-n solar cell

      SOLAR ENERGY MATERIALS AND SOLAR CELLS
    91. Chim, WK; Choi, WK; Leong, KK; Teh, LK
      Random telegraphic signals in rapid thermal annealed silicon-silicon oxidesystem

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    92. Chazalviel, JN; Wehrspohn, RB; Ozanam, F
      Electrochemical preparation of porous semiconductors: from phenomenology to understanding

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    93. Hattori, R; Tsukamizu, T; Tsuchiya, R; Miyake, K; He, Y; Kanicki, J
      Current-writing active-matrix circuit for organic light-emitting diode display using a-Si : H thin-film-transistors

      IEICE TRANSACTIONS ON ELECTRONICS
    94. Marsen, B; Lonfat, M; Scheier, P; Sattler, K
      The energy gap of pristine silicon clusters

      JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA
    95. Chen, TD; Agarwal, AM; Thilderkvist, A; Michel, C; Kimerling, LC
      Er-doped polycrystalline silicon for light emission at gimel=1.54 mu m

      JOURNAL OF ELECTRONIC MATERIALS
    96. Kim, DJ; Kim, KS
      The factors affecting the particle distributions inside the silane PCVD reactor for semiconductor processing

      AEROSOL SCIENCE AND TECHNOLOGY
    97. Danesh, P; Pantchev, B
      Mechanical stress in thin a-Si : H films

      SEMICONDUCTOR SCIENCE AND TECHNOLOGY
    98. Takai, M; Takagi, T; Nishimoto, T; Kondo, M; Matsuda, A
      Excitation frequency dependence of the optical emission intensity vs. deposition rate relationship in silane plasmas

      SURFACE & COATINGS TECHNOLOGY
    99. Pincik, E; Jergel, M; Gmucova, K; Gleskova, H; Kucera, M; Mullerova, J; Brunel, M; Mikula, M
      Low-energy argon ion beam treatment of a-Si : H/Si structure

      APPLIED SURFACE SCIENCE
    100. Wang, L; Li, J; Huang, XF; Li, QL; Yin, XB; Fan, WB; Xu, J; Li, W; Li, ZF; Zhu, JM; Wang, M; Liu, ZG; Chen, KJ
      Surface morphology and structural observation of laser interference crystallized a-Si : H/a-SiNx : H multilayers

      APPLIED SURFACE SCIENCE


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Documento generato il 30/10/20 alle ore 14:38:53