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La ricerca find articoli where soggetti phrase all words 'hydrogen termination' sort by level,fasc_key/DESCEND, pagina_ini_num/ASCEND ha restituito 232 riferimenti
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    1. Matsushita, K; Monbara, T; Nakayama, K; Naganuma, H; Okuyama, S; Okuyama, K
      In-situ observation of GaAs surface in high vacuum by contact angle measurement

      ELECTRONICS AND COMMUNICATIONS IN JAPAN PART II-ELECTRONICS
    2. Zhou, XW; Ishida, M; Imanishi, A; Nakato, Y
      Roles of charge polarization and steric hindrance in determining the chemical reactivity of surface Si-H and Si-Si bonds at H-terminated Si(100) and -(111)

      JOURNAL OF PHYSICAL CHEMISTRY B
    3. Palermo, V; Jones, D
      Morphological changes of the Si [100] surface after treatment with concentrated and diluted HF

      MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
    4. Conway, EM; Cunnane, VJ
      Effects of chemical pre-treatments on the etching process of p(100) Si in tetra-methyl ammonium hydroxide solution

      JOURNAL OF MICROMECHANICS AND MICROENGINEERING
    5. Saada, S; Barrat, S; Bauer-Grosse, E
      Silicon substrate preparation for epitaxial diamond crystals

      DIAMOND AND RELATED MATERIALS
    6. Sieber, N; Mantel, BF; Seyller, T; Ristein, J; Ley, L
      Hydrogenation of 6H-SiC as a surface passivation stable in air

      DIAMOND AND RELATED MATERIALS
    7. Herbots, N; Shaw, JM; Hurst, QB; Grams, MP; Culbertson, RJ; Smith, DJ; Atluri, V; Zimmerman, P
      The formation of ordered, ultrathin SiO2/Si(100) interfaces grown on (1 x 1) Si(100)

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    8. Zhang, X; Chabal, YJ; Christman, SB; Chaban, EE; Garfunkel, E
      Oxidation of H-covered flat and vicinal Si(111)-1x1 surfaces

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
    9. Yoshida, T; Hasegawa, H
      Realization of ultrahigh-vacuum-compatible defect-free hydrogen terminatedsilicon surfaces with the use of a UHV contactless capacitance-voltage method

      APPLIED SURFACE SCIENCE
    10. Hines, MA
      The picture tells the story: using surface morphology to probe chemical etching reactions

      INTERNATIONAL REVIEWS IN PHYSICAL CHEMISTRY
    11. Ji, CX; Oskam, G; Searson, PC
      Electrochemical nucleation and growth of copper on Si(111)

      SURFACE SCIENCE
    12. Shin, K; Hu, X; Zheng, X; Rafailovich, MH; Sokolov, J; Zaitsev, V; Schwarz, SA
      Silicon oxide surface as a substrate of polymer thin films

      MACROMOLECULES
    13. Zhang, X; Garfunkel, E; Chabal, YJ; Christman, SB; Chaban, EE
      Stability of HF-etched Si(100) surfaces in oxygen ambient

      APPLIED PHYSICS LETTERS
    14. Hersam, MC; Guisinger, NP; Lyding, JW; Thompson, DS; Moore, JS
      Atomic-level study of the robustness of the Si(100)-2x1 : H surface following exposure to ambient conditions

      APPLIED PHYSICS LETTERS
    15. Yamada, T; Takano, N; Yamada, K; Yoshitomi, S; Inoue, T; Osaka, T
      Evaluation of organic monolayers formed on Si(111): Exploring the possibilities for application in electron beam nanoscale patterning

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    16. Ojima, K; Yoshimura, M; Ueda, K
      Effect of hydrogen termination on Ba reaction on the Si(100) surface

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    17. Ikeda, M; Iwamoto, S; Nagashima, N
      Behavior of fluorine on silicon (100) surfaces etched with NH4F aqueous solutions

      ELECTRONICS AND COMMUNICATIONS IN JAPAN PART II-ELECTRONICS
    18. Kikuchi, D; Adachi, S
      Chemically cleaned InP(100) surfaces in aqueous HF solutions

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    19. Angermann, H; Henrion, W; Roseler, A; Rebien, M
      Wet-chemical passivation of Si(111)- and Si(100)-substrates

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    20. Wang, J; Tu, HL; Zhu, WX; Zhou, QG; Liu, AS; Zhang, C
      A comparative Raman spectroscopy study on silicon surface in HF, HF/H2O2 and HF/NH4F aqueous solutions

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    21. Tomita, N; Kawabata, Y; Adachi, S
      Characterization of Si(111) surfaces treated in aqueous H2SiF6 solution

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    22. Bok, TH; Ye, JH; Li, SFY
      Alternative NH4F/HCl solution for ultraclean Si(001) surface

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
    23. Mayusumi, M; Imai, M; Nakahara, S; Inoue, K
      Silicon surfaces cleaning and epitaxial growth through protective oxidation and hydrogen termination

      KAGAKU KOGAKU RONBUNSHU
    24. Bertagna, V; Rouelle, F; Erre, R; Chemla, M
      Electrochemical test for silicon surface contamination by copper traces inHF, HF plus HCl and HF+NH4F dilute solutions

      SEMICONDUCTOR SCIENCE AND TECHNOLOGY
    25. Nara, J; Ohno, T; Kajiyama, H; Hashizume, T
      Theoretical investigation of the island formation on a hydrogen-terminatedSi(001) surface

      APPLIED SURFACE SCIENCE
    26. Kageshima, H; Shiraishi, K; Ikeda, H; Zaima, S; Yasuda, Y
      Selectivity for O-adsorption position on dihydride Si(100) surfaces

      APPLIED SURFACE SCIENCE
    27. Kitagawa, T; Kondo, M; Matsuda, A
      Hydrogen-mediated low-temperature epitaxy of Si in plasma-enhanced chemical vapor deposition

      APPLIED SURFACE SCIENCE
    28. Sakata, K; Sato, T; Nakamura, K; Osamura, A; Tachibana, A
      Quantum chemical mechanism of oxidation of the hydrogen-terminated Si surface by oxygen anion

      APPLIED SURFACE SCIENCE
    29. Yamanaka, S; Takeuchi, D; Watanabe, H; Okushi, H; Kajimura, K
      Electrical conduction of high-conductivity layers near the surfaces in hydrogenated homoepitaxial diamond films

      APPLIED SURFACE SCIENCE
    30. Tachiki, M; Fukuda, T; Sugata, K; Seo, H; Umezawa, H; Kawarada, H
      Control of adsorbates and conduction on CVD-grown diamond surface, using scanning probe microscope

      APPLIED SURFACE SCIENCE
    31. Maki, T; Kawamura, H; Kato, S; Liu, JP; Kobayashi, T
      Electronic properties of diamond thin film for planar diamond electron emitter applications

      APPLIED SURFACE SCIENCE
    32. Kawasuso, A; Okada, S; Ichimiya, A
      Development and application of reflection high-energy positron diffraction

      NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
    33. Gallego, S; Avila, J; Martin, M; Blase, X; Taleb, A; Dumas, P; Asensio, MC
      Electronic structure of the ideally H-terminated Si(111)-(1X1) surface

      PHYSICAL REVIEW B
    34. Okazaki, Y; Miyazaki, S; Hirose, M
      Infrared attenuated-total-reflection spectroscopy of microcrystalline silicon growth

      JOURNAL OF NON-CRYSTALLINE SOLIDS
    35. Stryahilev, D; Diehl, F; Schroder, B
      The splitting of absorption bands in IR spectra of anisotropic SiH monolayers covering the internal surfaces in mu c-Si : H

      JOURNAL OF NON-CRYSTALLINE SOLIDS
    36. Watanabe, S
      Chemical structure of dihydride phase on saturated H-chemisorbed Si surfaces

      JOURNAL OF CHEMICAL PHYSICS
    37. Le Thanh, V; Bouchier, D; Hincelin, G
      Low-temperature formation of Si(001) 2x1 surfaces from wet chemical cleaning in NH4F solution

      JOURNAL OF APPLIED PHYSICS
    38. Allongue, P; de Villeneuve, CH; Morin, S; Boukherroub, R; Wayner, DDM
      The preparation of flat H-Si(111) surfaces in 40% NH4F revisited

      ELECTROCHIMICA ACTA
    39. Hoffmann, PM; Vermeir, IE; Searson, PC
      Electrochemical etching of n-type silicon in fluoride solutions

      JOURNAL OF THE ELECTROCHEMICAL SOCIETY
    40. Adachi, S; Kikuchi, D
      Chemical etching characteristics of GaAs(100) surfaces in aqueous HF solutions

      JOURNAL OF THE ELECTROCHEMICAL SOCIETY
    41. Imanishi, A; Ishida, M; Zhou, XW; Nakato, Y
      Formation of ordered rod-like clusters of iodine on II-terminated Si(111) surfaces during immersion in concentrated HI solutions

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    42. Yoshida, T; Hasegawa, H
      Ultrahigh-vacuum contactless capacitance-voltage characterization of hydrogen-terminated-free silicon surfaces

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    43. Tachiki, M; Fukuda, T; Sugata, K; Seo, H; Umezawa, H; Kawarada, H
      Nanofabrication on hydrogen-terminated diamond surfaces by atomic force microscope probe-induced oxidation

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    44. Yokoyama, K; Ochi, T; Yoshimoto, A; Sugawara, Y; Morita, S
      Atomic resolution imaging on Si(100)2x1 and Si(100)2x1 : H surfaces with noncontact atomic force microscopy

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    45. Maroun, F; Ozanam, F; Chazalviel, JN
      In-situ infrared monitoring of surface chemistry and free-carrier concentration correlated with voltammetry: Germanium, a model electrode

      JOURNAL OF PHYSICAL CHEMISTRY B
    46. Fukidome, H; Matsumura, M; Komeda, T; Namba, K; Nishioka, Y
      In situ atomic force microscopy observation of dissolution process of Si(111) in oxygen-free water at room temperature

      ELECTROCHEMICAL AND SOLID STATE LETTERS
    47. Wadayama, T; Suzuki, O; Takeuchi, K; Seki, H; Tanabe, T; Suzuki, Y; Hatta, A
      IR absorption enhancement for physisorbed methanol on Ag island films deposited on the oxidized and H-terminated Si(111) surfaces: effect of the metal surface morphology

      APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
    48. Taylor, PJ; Jesser, WA; Martinka, M; Singley, KM; Dinan, JH; Lareau, RT; Wood, MC; Clark, WW
      Reduced carbon contaminant, low-temperature silicon substrate preparation for "defect-free" homoepitaxy

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
    49. Schlaf, R; Hinogami, R; Fujitani, M; Yae, S; Nakato, Y
      Fermi level pinning on HF etched silicon surfaces investigated by photoelectron spectroscopy

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
    50. Baierle, RJ; Caldas, MJ
      Quantum-chemistry study of semiconductor systems: The initial oxidation ofthe (111)Si-H surface

      INTERNATIONAL JOURNAL OF MODERN PHYSICS B
    51. Kawabata, Y; Adachi, S
      Studies of Si(111) surfaces treated in aqueous fluorine-based solutions

      APPLIED SURFACE SCIENCE
    52. Fukutome, H; Hasegawa, S; Takano, K; Nakashima, H; Aoyama, T; Arimoto, H
      Visualization of the depleted layer in nanoscaled pn junctions on Si(011) surfaces with the use of scanning tunneling microscopy

      APPLIED SURFACE SCIENCE
    53. Honke, R; Jakob, P; Chabal, YJ; Dvorak, A; Tausendpfund, S; Stigler, W; Pavone, P; Mayer, AP; Schroder, U
      Anharmonic adlayer vibrations on the Si(111): H surface

      PHYSICAL REVIEW B-CONDENSED MATTER
    54. Kajiyama, H; Heike, S; Wada, Y; Hashizume, T
      Initial stage oxidation at an unpaired dangling bond site on a Si(100)-2 X1-H surface

      THIN SOLID FILMS
    55. Newton, TA; Boiani, JA; Hines, MA
      The correlation between surface morphology and spectral lineshape: a re-examination of the H-Si(111) stretch vibration

      SURFACE SCIENCE
    56. Niwano, M
      In-situ IR observation of etching and oxidation processes of Si surfaces

      SURFACE SCIENCE
    57. Nara, J; Sasaki, T; Ohno, T
      Theory of adsorption and diffusion of Si adatoms on H/Si(100) stepped surface

      JOURNAL OF CRYSTAL GROWTH
    58. Flidr, J; Huang, YC; Hines, MA
      An atomistic mechanism for the production of two- and three-dimensional etch hillocks on Si(111) surfaces

      JOURNAL OF CHEMICAL PHYSICS
    59. Tsuchida, H; Kamata, I; Izumi, K
      Infrared attenuated total reflection spectroscopy of 6H-SiC(0001) and (000(1)over-bar) surfaces

      JOURNAL OF APPLIED PHYSICS
    60. Morisawa, K; Ishida, M; Yae, S; Nakato, Y
      Electrochemical metal deposition on atomically nearly-flat silicon surfaces accompanied by nano-hole formation

      ELECTROCHIMICA ACTA
    61. King, SW; Nemanich, RJ; Davis, RF
      Dry ex situ cleaning processes for (0001)(Si) 6H-SiC surfaces

      JOURNAL OF THE ELECTROCHEMICAL SOCIETY
    62. Flidr, J; Huang, YC; Newton, TA; Hines, MA
      The formation of etch hillocks during step-flow etching of Si(111)

      CHEMICAL PHYSICS LETTERS
    63. Endo, M; Yoshida, H; Maeda, Y; Miyamoto, N; Niwano, M
      Infrared monitoring system for the detection of organic contamination on a300 mm Si wafer

      APPLIED PHYSICS LETTERS
    64. Hiraoka, YS
      Quantum chemical study of silane decomposition on hydrogen-terminated Si(001) surfaces

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    65. Yoshida, T; Hasegawa, H; Sakai, T
      A novel non-destructive characterization method of electronic properties of pre- and post-processing silicon surfaces based on ultrahigh-vacuum contactless capacitance-voltage measurements

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    66. Sugita, Y; Watanabe, S
      Influence of microscopic chemical reactions on the preparation of an oxide-free silicon surface in a fluorine-based solution

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    67. Umezawa, H; Tsugawa, K; Yamanaka, S; Takeuchi, D; Okushi, H; Kawarda, H
      High-performance diamond metal-semiconductor field-effect transistor with 1 mu m gate length

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    68. Fukidome, H; Matsumura, M
      A very simple method of flattening Si(111) surface at an atomic level using oxygen-free water

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    69. CEROFOLINI GF
      A STUDY OF THE IONIC ROUTE FOR HYDROGEN TERMINATIONS RESULTING AFTER SIO2 ETCHING BY CONCENTRATED AQUEOUS-SOLUTIONS OF HF

      Applied surface science
    70. NARA J; SASAKI T; OHNO T
      FIRST-PRINCIPLES CALCULATION ON DIFFUSION OF SI ADATOMS ON H SI(001)-(2X1) SURFACE/

      Applied surface science
    71. YAKOVLEV NL; SHUSTERMAN YV; MAKSYM PA
      HYDROGEN-TERMINATED SI(111) SURFACE STUDIED BY RHEED

      Applied surface science
    72. LETHANH V
      FABRICATION OF SIGE QUANTUM DOTS - A NEW APPROACH BASED ON SELECTIVE GROWTH ON CHEMICALLY PREPARED H-PASSIVATED SI(100) SURFACES

      Thin solid films
    73. NISHIMURA T; IKEDA A; KOSHIKAWA T; YASUE T; KIDO Y
      DIRECT-DETECTION OF H(D) ON SI(001) AND SI(111) SURFACES BY MEDIUM-ENERGY RECOIL SPECTROSCOPY

      Surface science
    74. MIKI K; SAKAMOTO K; SAKAMOTO T
      SURFACE PREPARATION OF SI SUBSTRATES FOR EPITAXIAL-GROWTH

      Surface science
    75. RYU JT; KUI K; NODA K; KATAYAMA M; OURA K
      THE EFFECT OF HYDROGEN TERMINATION ON IN GROWTH ON SI(100) SURFACE

      Surface science
    76. KAWASUSO A; OKADA S
      REFLECTION HIGH-ENERGY POSITRON DIFFRACTION FROM A SI(111) SURFACE

      Physical review letters
    77. HUANG YC; FLIDR J; NEWTON TA; HINES MA
      EFFECTS OF DYNAMIC STEP-STEP REPULSION AND AUTOCATALYSIS ON THE MORPHOLOGY OF ETCHED SI(111) SURFACES

      Physical review letters
    78. WATANABE S
      CHEMICAL-STRUCTURE AND SURFACE PHONONS ASSOCIATED WITH H ON SI

      The Journal of chemical physics
    79. FLIDR J; HUANG YC; NEWTON TA; HINES MA
      EXTRACTING SITE-SPECIFIC REACTION-RATES FROM STEADY SURFACE MORPHOLOGIES - KINETIC MONTE-CARLO SIMULATIONS OF AQUEOUS SI(111) ETCHING

      The Journal of chemical physics
    80. REN B; LIU FM; XIE J; MAO BW; ZU YB; TIAN ZQ
      IN-SITU MONITORING OF RAMAN-SCATTERING AND PHOTOLUMINESCENCE FROM SILICON SURFACES IN HF AQUEOUS-SOLUTIONS

      Applied physics letters
    81. LUO HH; CHIDSEY CED
      D-SI(111)(1X1) SURFACE FOR THE STUDY OF SILICON ETCHING IN AQUEOUS-SOLUTIONS

      Applied physics letters
    82. DITTRICH T; TIMOSHENKO VY; RAPPICH J
      UNUSUAL STABILIZATION OF SI SURFACES DURING ROUGHENING IN FLUORIDE SOLUTION

      Applied physics letters
    83. Kajiyama, H; Heike, S; Hitosugi, T; Hashizume, T
      Initial backbond oxidation at an unpaired dangling bond site on a hydrogen-terminated Si(100)2x1 surface

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    84. Gonda, S; Tanaka, M; Kurosawa, T; Kojima, I
      Sub-nanometer scale measurements of silicon oxide thickness by spectroscopic ellipsometry

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    85. BERTAGNA V; PLOUGONVEN C; ROUELLE F; CHEMLA M
      KINETICS OF ELECTROCHEMICAL CORROSION OF SILICON-WAFERS IN DILUTE HF SOLUTIONS

      Journal of electroanalytical chemistry [1992]
    86. DEVILLENEUVE CH; PINSON J; BERNARD MC; ALLONGUE P
      ELECTROCHEMICAL FORMATION OF CLOSE-PACKED PHENYL LAYERS ON SI(111)

      JOURNAL OF PHYSICAL CHEMISTRY B
    87. ROSS FM; OSKAM G; SEARSON PC; MACAULAY JM; LIDDLE JA
      CRYSTALLOGRAPHIC ASPECTS OF PORE FORMATION IN GALLIUM-ARSENIDE AND SILICON

      Philosophical magazine. A. Physics of condensed matter. Structure, defects and mechanical properties
    88. CHABAL YJ; WELDON MK; MARSICO VE
      APPLICATIONS OF INFRARED-ABSORPTION SPECTROSCOPY TO THE MICROELECTRONIC INDUSTRY

      Journal de physique. IV
    89. MIYATA N; WATANABE S; OKAMURA S
      INFRARED-STUDY AND RAMAN-STUDY OF H-TERMINATED SI(100) SURFACES PRODUCED BY ETCHING SOLUTIONS

      Applied surface science
    90. MORGEN P; HANSEN PE; PEDERSEN K
      EXPERIMENTS WITH EXTRINSIC SI(111) SURFACES - CS ADSORPTION AT ROOM-TEMPERATURE ON SI(111) TERMINATED WITH HYDROGEN AND OXYGEN

      Applied surface science
    91. OHMORI K; IKEDA H; IWANO H; ZAIMA S; YASUDA Y
      INITIAL OXIDATION OF SI(100)-(2X1)H MONOHYDRIDE SURFACES STUDIED BY SCANNING-TUNNELING-MICROSCOPY SCANNING TUNNELING SPECTROSCOPY

      Applied surface science
    92. NAMBA K; KOMEDA T; NISHIOKA Y
      FTIR-ATR, AFM, AND UHV-STM CHARACTERIZATION OF THE INTERFACE OF SIO2 SI(001) INDUCED BY THICK SIO2 FORMATION/

      Applied surface science
    93. TACHIBANA A; SAKATA K; OMOTO K
      QUANTUM-CHEMICAL STUDY ON ALUMINUM SELECTIVE CVD REACTION-MECHANISM

      Applied surface science
    94. OHBA Y; KATAYAMA I; YAMAMOTO Y; WATAMORI M; OURA K
      RECONSTRUCTION AND GROWTH OF AG ON HYDROGEN-TERMINATED SI(111) SURFACES

      Applied surface science
    95. THANH VL; BOUCHIER D; DEBARRE D
      FABRICATION OF SIGE QUANTUM DOTS ON A SI(100) SURFACE

      Physical review. B, Condensed matter
    96. KASPARIAN J; ELWENSPOEK M; ALLONGUE P
      DIGITAL COMPUTATION AND IN-SITU STM APPROACH OF SILICON ANISOTROPIC ETCHING

      Surface science
    97. SCHOBER G; WEIS O
      HIGHLY RESOLVED ATOMIC (111) SURFACES OF SYNTHETIC TYPE IIB DIAMOND IN AIR INVESTIGATED BY SCANNING-TUNNELING-MICROSCOPY USING A LITHIUM-NIOBATE SCANNER

      Surface science
    98. LEISENBERGER FP; OFNER H; RAMSEY MG; NETZER FP
      THE GROWTH OF INDIUM ON THE H-TERMINATED SI(111) 1X1 SURFACE

      Surface science
    99. WELDON MK; STEFANOV BB; RAGHAVACHARI K; CHABAL YJ
      INITIAL H2O-INDUCED OXIDATION OF SI(100)-(2X1)

      Physical review letters
    100. YANG HY; LUCOVSKY G
      LOCAL-FIELD CONTRIBUTIONS TO THE BOND-STRETCHING FREQUENCIES OF SI-H AND SI-H-2 GROUPS ON SINGULAR AND VICINAL SI(111)

      Physica status solidi. a, Applied research


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Documento generato il 29/05/20 alle ore 23:23:29