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La ricerca find articoli where soggetti phrase all words 'high-density plasmas' sort by level,fasc_key/DESCEND, pagina_ini_num/ASCEND ha restituito 57 riferimenti
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    1. Desvoivres, L; Vallier, L; Joubert, O
      X-ray photoelectron spectroscopy investigation of sidewall passivation films formed during gate etch processes

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    2. Rosen, D; Olsson, J; Hedlund, C
      Membrane covered electrically isolated through-wafer via holes

      JOURNAL OF MICROMECHANICS AND MICROENGINEERING
    3. Krishnan, AT; Bae, SH; Fonash, SJ
      Fabrication of microcrystalline silicon TFTs using a high-density plasma approach

      IEEE ELECTRON DEVICE LETTERS
    4. Ho, P; Johannes, JE; Buss, RJ; Meeks, E
      Modeling the plasma chemistry of C2F6 and CHF3 etching of silicon dioxide,with comparisons to etch rate and diagnostic data

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
    5. Pelhos, K; Donnelly, VM; Kornblit, A; Green, ML; Van Dover, RB; Manchanda, L; Hu, Y; Morris, M; Bower, E
      Etching of high-k dielectric Zr1-xAlxOy films in chlorine-containing plasmas

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
    6. Singh, H; Coburn, JW; Graves, DB
      Measurements of neutral and ion composition, neutral temperature, and electron energy distribution function in a CF4 inductively coupled plasma

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
    7. Lee, JW; Jeon, MH; Devre, M; Mackenzie, KD; Johnson, D; Sasserath, JN; Pearton, SJ; Ren, F; Shul, RJ
      Understanding of etch mechanism and etch depth distribution in inductivelycoupled plasma etching of GaAs

      SOLID-STATE ELECTRONICS
    8. Fournier, KB; Young, BKF; Moon, SJ; Foord, ME; Price, DF; Shepherd, RL; Springer, PT
      Characterization of time resolved, buried layer plasmas produced by ultrashort laser pulses

      JOURNAL OF QUANTITATIVE SPECTROSCOPY & RADIATIVE TRANSFER
    9. Choi, CJ; Kwon, OS; Seol, YS; Kim, YW; Choi, IH
      Ar addition effect on mechanism of fluorocarbon ion formation in CF4/Ar inductively coupled plasma

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    10. Desvoivres, L; Vallier, L; Joubert, O
      Sub-0.1 mu m gate etch processes: Towards some limitations of the plasma technology?

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    11. Midha, V; Economou, DJ
      Spatio-temporal evolution of a pulsed chlorine discharge

      PLASMA SOURCES SCIENCE & TECHNOLOGY
    12. Franssila, S; Kiihamaki, J; Karttunen, J
      Etching through silicon wafer in inductively coupled plasma

      MICROSYSTEM TECHNOLOGIES
    13. Cho, BO; Hwang, SW; Lee, GR; Moon, SH
      Angular dependence of SiO2 etching in a fluorocarbon plasma

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
    14. Lane, JM; Bogart, KHA; Klemens, FP; Lee, JTC
      The role of feedgas chemistry, mask material, and processing parameters inprofile evolution during plasma etching of Si(100)

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
    15. Aachboun, S; Ranson, P; Hilbert, C; Boufnichel, M
      Cryogenic etching of deep narrow trenches in silicon

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
    16. Tuda, M; Ono, K; Ootera, H; Tsuchihashi, M; Hanazaki, M; Komemura, T
      Large-diameter microwave plasma source excited by azimuthally symmetric surface waves

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
    17. Yonekura, K; Katayama, T; Maruyama, T; Fujiwara, N; Miyatake, H
      Influence of electron shading on highly selective SiO2 to Si etching

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
    18. Ono, K; Tuda, M
      Dynamics of plasma-surface interactions and feature profile evolution during pulsed plasma etching

      THIN SOLID FILMS
    19. Feldsien, J; Kim, D; Economou, DJ
      SiO2 etching in inductively coupled C2F6 plasmas: surface chemistry and two-dimensional simulations

      THIN SOLID FILMS
    20. Economou, DJ
      Modeling and simulation of plasma etching reactors for microelectronics

      THIN SOLID FILMS
    21. Wijesundara, MBJ; Ji, Y; Ni, B; Sinnott, SB; Hanley, L
      Effect of polyatomic ion structure on thin-film growth: Experiments and molecular dynamics simulations

      JOURNAL OF APPLIED PHYSICS
    22. Wang, YC; Misakian, M; Goyette, AN; Olthoff, JK
      Ion fluxes and energies in inductively coupled radio-frequency discharges containing CHF3

      JOURNAL OF APPLIED PHYSICS
    23. Bogart, KHA; Donnelly, VM
      Composition of trench sidewalls and bottoms for SiO2-masked Si(100) etchedin Cl-2 plasmas

      JOURNAL OF APPLIED PHYSICS
    24. Ye, JH; Zhou, MS
      Carbon rich plasma-induced damage in silicon nitride etch

      JOURNAL OF THE ELECTROCHEMICAL SOCIETY
    25. Ayon, AA; Ishihara, K; Braff, RA; Sawin, HH; Schmidt, MA
      Microfabrication and testing of suspended structures compatible with silicon-on-insulator technology

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    26. Hwang, GS; Giapis, KP
      Role of film conformality in charging damage during plasma-assisted interlevel dielectric deposition

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    27. Vyvoda, MA; Li, M; Graves, DB
      Hardmask charging during Cl-2 plasma etching of silicon

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
    28. Li, X; Schaepkens, M; Oehrlein, GS; Ellefson, RE; Frees, LC; Mueller, N; Korner, N
      Mass spectrometric measurements on inductively coupled fluorocarbon plasmas: Positive ions, radicals and endpoint detection

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
    29. Aachboun, S; Ranson, P
      Deep anisotropic etching of silicon

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
    30. Ayon, AA; Ishihara, K; Braff, RA; Sawin, HH; Schmidt, MA
      Application of the footing effect in the micromachining of self-aligned, free-standing, complimentary metal-oxide-semiconductor compatible structures

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
    31. Desvoivres, L; Bonvalot, M; Vallier, L; Joubert, O
      Study of thin gate of oxide etching during plasma patterning of 0.1 mu m Si gates

      MICROELECTRONIC ENGINEERING
    32. Converse, MC; Hitchon, WNG
      Investigation of the effect of a "cold" electron tail on trench charging

      IEEE TRANSACTIONS ON PLASMA SCIENCE
    33. Bogart, KHA; Donnelly, VM
      On the constant composition and thickness of the chlorinated silicon surface layer subjected to increasing etching product concentrations during chlorine plasma etching

      JOURNAL OF APPLIED PHYSICS
    34. Schwarzenbach, W; Cunge, G; Booth, JP
      High mass positive ions and molecules in capacitively-coupled radio-frequency CF4 plasmas

      JOURNAL OF APPLIED PHYSICS
    35. Oehrlein, GS; Doemling, MF; Kastenmeier, BEE; Matsuo, PJ; Rueger, NR; Schaepkens, M; Standaert, TEFM
      Surface science issues in plasma etching

      IBM JOURNAL OF RESEARCH AND DEVELOPMENT
    36. Donnelly, VM; Klemens, FP; Sorsch, TW; Timp, GL; Baumann, FH
      Oxidation of Si beneath thin SiO2 layers during exposure to HBr/O-2 plasmas, investigated by vacuum transfer x-ray photoelectron spectroscopy

      APPLIED PHYSICS LETTERS
    37. Margot, J
      Etching of thin films using magnetised plasmas

      JOURNAL DE PHYSIQUE IV
    38. Ueno, K; Donnelly, VM; Tsuchiya, Y
      Cleaning of CHF3 plasma-etched SiO2/SiN/Cu via structures using a hydrogenplasma, an oxygen plasma, and hexafluoroacetylacetone vapors

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    39. Oehrlein, GS; Kurogi, Y
      Sidewall surface chemistry in directional etching processes

      MATERIALS SCIENCE & ENGINEERING R-REPORTS
    40. YEON CK; YOU HJ
      DEEP-SUBMICRON TRENCH PROFILE CONTROL USING A MAGNETRON ENHANCED REACTIVE ION ETCHING SYSTEM FOR SHALLOW TRENCH ISOLATION

      Journal of vacuum science & technology. A. Vacuum, surfaces, and films
    41. CHINZEI Y; OGATA M; SHINDO H; ICHIKI T; HORIIKE Y
      FLOW-RATE RULE FOR HIGH-ASPECT-RATIO SIO2 HOLE ETCHING

      Journal of vacuum science & technology. A. Vacuum, surfaces, and films
    42. DONNELLY VM; LAYADI N
      HALOGEN UPTAKE BY THIN SIO2 LAYERS ON EXPOSURE TO HBR O-2 AND CL-2 PLASMAS, INVESTIGATED BY VACUUM TRANSFER X-RAY PHOTOELECTRON-SPECTROSCOPY/

      Journal of vacuum science & technology. A. Vacuum, surfaces, and films
    43. INAYOSHI M; ITO M; HORI M; GOTO T; HIRAMATSU M
      SURFACE-REACTION OF CF2 RADICALS FOR FLUOROCARBON FILM FORMATION IN SIO2 SI SELECTIVE ETCHING PROCESS/

      Journal of vacuum science & technology. A. Vacuum, surfaces, and films
    44. TURNER NH; SCHREIFELS JA
      SURFACE-ANALYSIS - X-RAY PHOTOELECTRON-SPECTROSCOPY AND AUGER-ELECTRON SPECTROSCOPY

      Analytical chemistry
    45. GIAPIS KP; HWANG GS
      PATTERN-DEPENDENT CHARGING AND THE ROLE OF ELECTRON-TUNNELING

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    46. HWANG GS; GIAPIS KP
      MECHANISM OF CHARGING REDUCTION IN PULSED PLASMA-ETCHING

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    47. MARUYAMA T; FUJIWARA N; OGINO S; MIYATAKE H
      REDUCTION OF CHARGE BUILDUP WITH PULSE-MODULATED BIAS IN PULSED ELECTRON-CYCLOTRON-RESONANCE PLASMA

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    48. YONEKURA K; KIRITANI M; SAKAMORI S; YOKOI T; FUJIWARA N; MIYATAKE H
      EFFECTS OF CHARGE BUILDUP OF UNDERLYING LAYER BY HIGH-ASPECT-RATIO ETCHING

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    49. MALYSHEV MV; DONNELLY VM
      DETERMINATION OF ELECTRON TEMPERATURES IN PLASMAS BY MULTIPLE RARE-GAS OPTICAL-EMISSION, AND IMPLICATIONS FOR ADVANCED ACTINOMETRY

      Journal of vacuum science & technology. A. Vacuum, surfaces, and films
    50. HOSOMI S; OMORI N
      HOLE-SIZE DEPENDENT HIGHLY SELECTIVE SIO2 ETCHING WITH A HEXTHODE-TYPE WIDE-GAP PLASMA ETCHER

      Journal of vacuum science & technology. A. Vacuum, surfaces, and films
    51. OEHRLEIN GS
      SURFACE PROCESSES IN LOW-PRESSURE PLASMAS

      Surface science
    52. LAYADI N; DONNELLY VM; LEE JTC
      CL-2 PLASMA-ETCHING OF SI(100) - NATURE OF THE CHLORINATED SURFACE-LAYER STUDIED BY ANGLE-RESOLVED X-RAY PHOTOELECTRON-SPECTROSCOPY

      Journal of applied physics
    53. UENO K; DONNELLY VM; KIKKAWA T
      CLEANING OF CHF3 PLASMA-ETCHED SIO2 SIN/CU VIA STRUCTURES WITH DILUTEHYDROFLUORIC-ACID SOLUTIONS/

      Journal of the Electrochemical Society
    54. WANG Y; GRAHAM SW; CHAN L; LOONG ST
      UNDERSTANDING OF VIA-ETCH-INDUCED POLYMER FORMATION AND ITS REMOVAL

      Journal of the Electrochemical Society
    55. ASHIDA S; LIEBERMAN MA
      SPATIALLY AVERAGED (GLOBAL) MODEL OF TIME MODULATED HIGH-DENSITY CHLORINE PLASMAS

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    56. THEIRICH D; NINGEL KP; ENGEMANN J
      A NOVEL REMOTE TECHNIQUE FOR HIGH-RATE PLASMA POLYMERIZATION WITH RADIO-FREQUENCY PLASMAS

      Surface & coatings technology
    57. MILLER PA; HEBNER GA; GREENBERG KE; POCHAN PD; ARAGON BP
      AN INDUCTIVELY-COUPLED PLASMA SOURCE FOR THE GASEOUS ELECTRONICS CONFERENCE RF REFERENCE CELL

      Journal of research of the National Institute of Standards and Technology


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Documento generato il 22/10/20 alle ore 06:49:37