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La ricerca find articoli where soggetti phrase all words 'high resolution X-ray diffraction' sort by level,fasc_key/DESCEND, pagina_ini_num/ASCEND ha restituito 67 riferimenti
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    1. Li, ZQ; Bang, HJ; Piao, GX; Sawahata, J; Akimoto, K; Kinoshita, H; Watanabe, K
      Substrate roughness dependence of structural and optical properties of Eu-doped GaN grown by gas source molecular beam epitaxy

      JOURNAL OF CRYSTAL GROWTH
    2. Tanaka, S; Ataka, M; Kubota, T; Soga, T; Homma, K; Lee, WC; Tanokura, M
      The effect of amphiphilic additives on the growth and morphology of Aspergillus niger acid proteinase A crystals

      JOURNAL OF CRYSTAL GROWTH
    3. Fastenau, JM; Liu, WK; Fang, XM; Lubyshev, DI; Pelzel, RI; Yurasits, TR; Stewart, TR; Lee, JH; Li, SS; Tidrow, MZ
      Commercial production of QWIP wafers by molecular beam epitaxy

      INFRARED PHYSICS & TECHNOLOGY
    4. Li, CR; Wu, LJ; Chen, WC
      Studies of the impurity effects on crystalline quality by high-resolution X-ray diffraction

      ACTA PHYSICA SINICA
    5. Zielinska-Rohozinska, E; Gronkowski, J; Regulska, M; Majer, M; Pakula, K
      X-ray diffraction study of composition inhomogeneities in Ga1-xInxN thin layers

      CRYSTAL RESEARCH AND TECHNOLOGY
    6. Murphy, BM; Collins, SP; Golshan, M; Moore, M; Reid, J; Kowalski, G
      SRS station 16.3: high-resolution applications

      NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT
    7. Abramof, E; Beloto, AF; Ueda, M; Gunzel, R; Reuther, H
      Reciprocal space mapping of silicon implanted with nitrogen by plasma immersion ion implantation

      NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
    8. Cho, HK; Lee, JY; Jeon, SR; Yang, GM
      Structural properties of Si and Mg doped and undoped Al0.13Ga0.87N layers grown by metalorganic chemical vapor deposition

      JOURNAL OF CRYSTAL GROWTH
    9. Kim, KS; Kim, KB; Kim, SH
      Nitridation mechanism of sapphire and its influence on the growth and properties of GaN overlayers

      JOURNAL OF CRYSTAL GROWTH
    10. Vallazza, M; Senge, A; Lippmann, C; Perbandt, M; Betzel, C; Bald, R; Erdmann, VA
      Crystallization and X-ray diffraction data of Thermus flavus 5S rRNA helices

      JOURNAL OF CRYSTAL GROWTH
    11. Volz, HM; Matyi, RJ
      A high resolution triple axis X-ray diffraction analysis of radiation damage in lysozyme crystals

      JOURNAL OF CRYSTAL GROWTH
    12. Hanson, BL; Harp, JM; Kirschbaum, K; Parrish, DA; Timm, DE; Howard, A; Pinkerton, AA; Bunick, GJ
      Macromolecular data collection with cryogenic helium

      JOURNAL OF CRYSTAL GROWTH
    13. As, DJ; Frey, T; Bartels, M; Lischka, K; Goldhahn, R; Shokhovets, S; Tabata, A; Fernandez, JRL; Leite, JR
      MBE growth of cubic AlyGa1-yN/GaN heterostructures structural, vibrationaland optical properties

      JOURNAL OF CRYSTAL GROWTH
    14. Xue, QK; Xue, QZ; Kuwano, S; Nakayama, K; Sakurai, T; Tsong, IST; Qiu, XG; Segawa, Y
      Surface superstructures and optical properties of wurtzite GaN grown on 6H-SiC

      JOURNAL OF CRYSTAL GROWTH
    15. Song, JS; Chang, JH; Cho, MW; Hanada, T; Yao, T
      Growth and characterization of ZnSe/BeTe superlattices

      JOURNAL OF CRYSTAL GROWTH
    16. Shimizu, A; Nishizawa, J; Oyama, Y; Suto, K
      InP single crystal growth by the horizontal Bridgman method under controlled phosphorus vapor pressure

      JOURNAL OF CRYSTAL GROWTH
    17. Kusaba, K; Ohshima, E; Syono, Y; Kikegawa, T
      High-pressure phases of V2O5: an application of an in situ X-ray observation method to high-pressure synthesis of materials

      JOURNAL OF CRYSTAL GROWTH
    18. Calamiotou, M; Chrysanthakopoulos, N; Lioutas, C; Tsagaraki, K; Georgakilas, A
      Microstructural differences of the two possible orientations of GaAs on vicinal (001) Si substrates

      JOURNAL OF CRYSTAL GROWTH
    19. Kimura, R; Takahashi, K
      Investigation of the initial growth of cubic-GaN using an AlGaAs buffer layer grown on GaAs (100) by molecular beam epitaxy

      JOURNAL OF CRYSTAL GROWTH
    20. Hayashi, H; Hayashida, A; Jia, A; Takahashi, K; Yoshikawa, A
      Experimental investigation of inclusion of hexagonal GaN phase-domain by varying nitrogen-beam direction to a < 111 > axis in MBE growth of cubic GaN

      JOURNAL OF CRYSTAL GROWTH
    21. Li, ZQ; Chen, H; Liu, HF; Wan, L; Huang, Q; Zhou, JM
      Photoluminescence study of Si doping cubic GaN grown on (001) GaAs substrates by molecular beam epitaxy

      JOURNAL OF CRYSTAL GROWTH
    22. Xin, HP; Welty, RJ; Hong, YG; Tu, CW
      Gas-source MBE growth of Ga(In)NP/GaP structures and their applications for red light-emitting diodes

      JOURNAL OF CRYSTAL GROWTH
    23. Prevot, I; Marcadet, X; Durand, O; Bisaro, R; Bouchier, A; Julien, FH
      Characterisation and optimisation of MBE grown arsenide/antimonide interfaces

      JOURNAL OF CRYSTAL GROWTH
    24. Springholz, G; Schwarzl, T; Heiss, W; Aigle, M; Pascher, H
      Molecular beam epitaxy of lead salt-based vertical cavity surface emittinglasers for the 4-6 mu m spectral region

      JOURNAL OF CRYSTAL GROWTH
    25. Fons, P; Iwata, K; Yamada, A; Matsubara, K; Niki, S; Nakahara, K; Tanabe, T; Takasu, H
      Nucleation and growth of ZnO on (1(1)over-bar-20) sapphire substrates using molecular beam epitaxy

      JOURNAL OF CRYSTAL GROWTH
    26. Tuominen, M; Ellison, A; Tuomi, T; Yakimova, R; Milita, S; Janzen, E
      Nature and occurrence of defects in 6H-SiC Lely crystals

      JOURNAL OF CRYSTAL GROWTH
    27. Tournie, E; Vigue, F; Laugt, M; Faurie, JP
      Wide-band-gap ZnMgBeSe alloys grown onto GaAs by molecular beam epitaxy

      JOURNAL OF CRYSTAL GROWTH
    28. Alvarado, UR; DeWitt, CR; Shultz, BB; Ramsland, PA; Edmundson, AB
      Crystallization of a human Bence-Jones protein in microgravity using vapordiffusion in capillaries

      JOURNAL OF CRYSTAL GROWTH
    29. Song, JH; Kim, KK; Oh, YJ; Jung, HJ; Song, JH; Choi, DK; Choi, WK
      Twinned LaAlO3 substrate effect on epitaxially grown La-Ca-Mn-O thin film crystalline structure

      JOURNAL OF CRYSTAL GROWTH
    30. Marra, GL; Artioli, G; Fitch, AN; Milanesio, M; Lamberti, C
      Orthorhombic to monoclinic phase transition in high-Ti-loaded TS-1: an attempt to locate Ti in the MFI framework by low temperature XRD

      MICROPOROUS AND MESOPOROUS MATERIALS
    31. Mallinson, PR; Barr, G; Coles, SJ; Row, TNG; MacNicol, DD; Teat, SJ; Wozniak, K
      Charge densities from high-resolution synchrotron X-ray diffraction experiments

      JOURNAL OF SYNCHROTRON RADIATION
    32. Lam, TT; Moore, CD; Forrest, RL; Goorsky, MS; Johnson, SM; Leonard, DB; Strand, TA; Delyon, TJ; Gorwitz, MD
      Shear deformation and strain relaxation in HgCdTe on (211) CdZnTe

      JOURNAL OF ELECTRONIC MATERIALS
    33. Cordier, Y; Ferre, D; Chauveau, JM; Dipersio, J
      Surface morphology and strain relaxation of InAlAs buffer layers grown lattice mismatched on GaAs with inverse steps

      APPLIED SURFACE SCIENCE
    34. Abramof, E; Beloto, AF; Ueda, M; Gomes, GF; Berni, LA; Reuther, H
      Analysis of X-ray rocking curves in (001) silicon crystals implanted with nitrogen by plasma immersion ion implantation

      NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
    35. Diduszko, R; Domuchowski, V; Nadolny, AJ; Sadowski, J
      Influence of Mn content in MBE-grown Sn1-xMnxTe layers on their structuralproperties studied by X-ray diffraction

      THIN SOLID FILMS
    36. Rodriguez, AG; Navarro-Contreras, H; Vidal, MA
      Long-range order-disorder transition in (GaAs)(1-x)(Ge-2)(x) grown on GaAs(001) and GaAs(111)

      MICROELECTRONICS JOURNAL
    37. Nakamura, S; Takagimoto, S; Ando, T; Kugimiya, H; Yamada, Y; Taguchi, T
      Optical and structural properties of high-quality ZnS epitaxial layers grown on GaAs substrates by low-pressure metalorganic chemical vapor deposition

      JOURNAL OF CRYSTAL GROWTH
    38. Grossmann, V; Heinke, H; Leonardi, K; Hommel, D
      Generation of misfit dislocations due to thermally induced strain - a study by temperature-dependent HRXRD

      JOURNAL OF CRYSTAL GROWTH
    39. Heinke, H; Passow, T; Stockmann, A; Selke, H; Leonardi, K; Hommel, D
      Analysis of cadmium diffusion in ZnSe by X-ray diffraction and transmission electron microscopy

      JOURNAL OF CRYSTAL GROWTH
    40. Gerhard, T; Albert, D; Faschinger, W
      High-resolution X-ray diffraction study of degrading ZnSe-based laser diodes

      JOURNAL OF CRYSTAL GROWTH
    41. Moon, Y; Lee, TW; Yoon, S; Yoo, K; Yoon, E
      Observation of two independent sources for arsenic carryover

      JOURNAL OF CRYSTAL GROWTH
    42. Bodar-Houillon, F; Elissami, Y; Marsura, A; Ghermani, NE; Espinosa, E; Bouhmaida, N; Thalal, A
      Synthesis and experimental electron density of bis(heterocyclic) azines: The case of 6,6 '-bis(chloromethyl)-2,2 '-bipyrazine

      EUROPEAN JOURNAL OF ORGANIC CHEMISTRY
    43. Goorsky, MS; Feichtinger, P; Fukuto, H; U'Ren, G
      X-ray topography and diffraction studies of misfit dislocation nucleation in Si-based structures

      PHILOSOPHICAL TRANSACTIONS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL PHYSICAL AND ENGINEERING SCIENCES
    44. Moore, CD; Tanner, BK
      High-resolution X-ray diffraction determination of composition grading in Hg1-xMnxTe grown by interdiffused multilayer organometallic vapour-phase epitaxy

      PHILOSOPHICAL TRANSACTIONS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL PHYSICAL AND ENGINEERING SCIENCES
    45. Chaudhuri, J; Ng, MH; Koleske, DD; Wickenden, AE; Henry, RL
      High resolution X-ray diffraction and X-ray topography study of GaN on sapphire

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    46. Fernandes, TRC; Langford, JI
      Line broadening in chromites from Zimbabwe using high-resolution X-ray diffraction

      POWDER DIFFRACTION
    47. Dagnall, G; Brown, AS; Stock, SR
      Arsenic incorporation in InAsP/InP quantum wells

      JOURNAL OF ELECTRONIC MATERIALS
    48. Tomich, DH; Mitchel, WC; Chow, P; Tu, CW
      Study of interfaces in GaInSb InAs quantum wells by high-resolution X-ray diffraction and reciprocal space mapping

      JOURNAL OF CRYSTAL GROWTH
    49. Kitada, T; Ohashi, M; Shimomura, S; Hiyamizu, S
      High-quality InGaAs layers grown on (411)A-oriented InP substrates by molecular beam epitaxy

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    50. Faleev, N; Pavlov, K; Tabuchi, M; Takeda, Y
      Influence of long-range lateral ordering in structures with quantum dots on the spatial distribution of diffracted X-ray radiation

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    51. Pavlov, K; Faleev, N; Tabuchi, M; Takeda, Y
      Specific aspects of X-ray diffraction on statistically distributed QDs in perfect crystal matrix

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    52. FERNANDES TRC; LANGFORD JI
      HIGH-RESOLUTION X-RAY-DIFFRACTION STUDY OF THE CHROMITE (MG0.60FE0.402-4()(AL0.39CR1.50FE0.093+)O)

      Powder diffraction
    53. HAN BK; LI L; KAPPERS MJ; HICKS RF; YOON H; GOORSKY MS; HIGA KT
      CHARACTERIZATION OF INGAAS GAAS(001) FILMS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY USING ALTERNATIVE SOURCES/

      Journal of electronic materials
    54. PERRY WG; BREMSER MB; ZHELEVA T; LINTHICUM KJ; DAVIS RF
      BIAXIAL STRAIN IN ALXGA1-XN GAN LAYERS DEPOSITED ON 6H-SIC/

      Thin solid films
    55. Darowski, N; Pietsch, U; Wang, KH; Forchel, A; Shen, Q; Kycia, S
      X-ray diffraction analysis of strain relaxation in free standing and buried GaAs/GaInAs/GaAs SQW lateral structures

      THIN SOLID FILMS
    56. HEINKE H; KIRCHNER V; EINFELDT S; BIRKLE U; HOMMEL D
      THERMALLY-INDUCED STRAIN IN MBE GROWN GAN LAYERS

      Journal of crystal growth
    57. RESS HR; SPAHN W; EBEL R; NURNBERGER J; KELLER M; SCHAFER H; KORN M; EHINGER M; FASCHINGER W; LANDWEHR G
      START OF MISFIT RELAXATION IN GAAS-ZNSE HETEROSTRUCTURES

      Journal of crystal growth
    58. GROSSMANN V; BEHRINGER M; HEINKE H; HOMMEL D
      TEMPERATURE-DEPENDENT MEASUREMENTS ON ZNSE HETEROSTRUCTURES BY HIGH-RESOLUTION X-RAY-DIFFRACTION

      Journal of crystal growth
    59. HEINKE H; BEHRINGER M; WENISCH H; GROSSMANN V; HOMMEL D
      STRUCTURAL-PROPERTIES OF HOMOEPITAXIAL AND HETEROEPITAXIAL ZNSE-BASEDLASER STRUCTURES

      Journal of crystal growth
    60. Hohnsdorf, F; Koch, J; Agert, C; Stolz, W
      Investigations of (GaIn)(NAs) bulk layers and (GaIn)(NAs)/GaAs multiple quantum well structures grown using tertiarybutylarsine (TBAs) and 1,1-dimethylhydrazine (UDMHy)

      JOURNAL OF CRYSTAL GROWTH
    61. YOON H; VANSCYOC JM; GOORSKY MS; HERMON H; SCHIEBER M; LUND JC; JAMES RB
      INVESTIGATION OF THE EFFECTS OF POLISHING AND ETCHING ON THE QUALITY OF CD1-XZNXTE USING SPATIAL-MAPPING TECHNIQUES

      Journal of electronic materials
    62. BASSIGNANA IC; MACQUISTAN DA; HILLIER GC; STREATER R; BECKETT D; MAJEED A; MINER C
      VARIATION IN THE LATTICE-PARAMETER AND CRYSTAL QUALITY OF COMMERCIALLY AVAILABLE SI-DOPED GAAS SUBSTRATES

      Journal of crystal growth
    63. SOEJIMA Y; NINOMIYA T; YAMADA H
      THE STRUCTURAL PHASE-TRANSITION IN BATIO3 IN A STATIC ELECTRIC-FIELD

      Phase transitions
    64. TRAN CA; GRAHAM JT; BREBNER JL; MASUT RA
      INTERFACES OF INASP INP MULTIPLE-QUANTUM WELLS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY/

      Journal of electronic materials
    65. FASCHINGER W; HAUZENBERGER F; JUZA P; PESEK A; SITTER H
      ATOMIC LAYER EPITAXY OF CDTE-ZNTE AND CDTE-MNTE SUPERLATTICES

      Journal of electronic materials
    66. LAL K
      HIGH-RESOLUTION X-RAY-DIFFRACTION STUDIES OF REAL STRUCTURE OF NEARLYPERFECT SINGLE-CRYSTALS

      Bulletin of Materials Science
    67. VANDERSLUIS P
      HIGH-RESOLUTION X-RAY-DIFFRACTION OF EPITAXIAL LAYERS ON VICINAL SEMICONDUCTOR SUBSTRATES

      Philips journal of research


ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 29/10/20 alle ore 03:16:22