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La ricerca find articoli where soggetti phrase all words 'heterostructures' sort by level,fasc_key/DESCEND, pagina_ini_num/ASCEND ha restituito 5160 riferimenti
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    1. da Silva, LR; Vallejos, RO; Mendes, RS
      Specific heat oscillations in quasi-periodic structures

      CHAOS SOLITONS & FRACTALS
    2. Kim, TW; Lee, DU; Choo, DC
      Microstructural and optical properties of strain compensated InxGa1-xAs/InyAl1-yAs multiple quantum wells

      JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS
    3. Kovtyukhova, NI; Martin, BR; Mbindyo, JKN; Smith, PA; Razavi, B; Mayer, TS; Mallouk, TE
      Layer-by-layer assembly of rectifying junctions in and on metal nanowires

      JOURNAL OF PHYSICAL CHEMISTRY B
    4. Ostrovskii, IV; Korotchenkov, OA; Olikh, OY; Podolyan, AA; Chupryna, RG; Torres-Cisneros, M
      Acoustically driven optical phenomena in bulk and low-dimensional semiconductors

      JOURNAL OF OPTICS A-PURE AND APPLIED OPTICS
    5. Ijdo, WL; Pinnavaia, TJ
      Amphiphilic layered silicate clay for the efficient removal of organic pollutants from water

      GREEN CHEMISTRY
    6. Kroemer, H
      Quasi-electric fields and band offsets: Teaching electrons new tricks (Nobel lecture)

      CHEMPHYSCHEM
    7. Alferov, ZI
      The double heterostructure: The concept and its applications in physics, electronics, and technology (Nobel lecture)

      CHEMPHYSCHEM
    8. Cortez, S; Krebs, O; Voisin, P
      Breakdown of rotational symmetry at semiconductor interfaces: a microscopic description of valence subband mixing

      EUROPEAN PHYSICAL JOURNAL B
    9. Lourenco, SA; Dias, IFL; Laureto, E; Duarte, JL; Filho, DOT; Meneses, EA; Leite, JR
      Influence of Al content on temperature dependence of excitonic transitionsin quantum wells

      EUROPEAN PHYSICAL JOURNAL B
    10. Ghosh, A
      Dynamical properties of three component Fibonacci quasicrystal

      EUROPEAN PHYSICAL JOURNAL B
    11. Kaczynski, A; Kucharczyk, R; Steslicka, M
      Density of states of a superlattice with a delta defect in the subsurface region

      PHYSICA E
    12. Papadakis, SJ; De Poortere, EP; Shayegan, M; Winkler, R
      Spin-splitting in GaAs two-dimensional holes

      PHYSICA E
    13. Eaves, L
      An eddy viscosity model of the dissipative voltage steps in quantum Hall effect breakdown

      PHYSICA E
    14. Dietl, T; Ohno, H
      Ferromagnetism in III-V and II-VI semiconductor structures

      PHYSICA E
    15. Fromhold, TM; Wilkinson, PB; Martin, PM; Thornton, A; Eaves, L; Sheard, FW; Main, PC; Henini, M
      Chaos in quantum wells and analogous optical systems

      PHYSICA E
    16. Shi, JJ; Sanders, BC; Pan, SH; Goldys, EM
      Improving performance of resonant tunneling devices in asymmetric structures

      PHYSICA E
    17. Kisin, MV; Stroscio, MA; Luryi, S; Belenky, G
      Interband tunneling depopulation in type-II InAs/GaSb cascade laser heterostructure

      PHYSICA E
    18. Zanelato, G; Pusep, YA; Galzerani, JC; Lubyshev, DI; Gonzalez-Borrero, PP
      Raman study of the segregation of GaAs/AlAs heterostructures grown by molecular beam epitaxy

      PHYSICA E
    19. Chen, PC; Piermarocchi, C; Sham, LJ
      Theory of coherent optical control of exciton spin dynamics in a semiconductor dot

      PHYSICA E
    20. Wilamowski, Z; Jantsch, W
      Spin resonance properties of the two-dimensional electron gas

      PHYSICA E
    21. Meisels, R; Dybko, K; Ziouzia, F; Kuchar, F; Deutschmann, R; Abstreiter, G; Hein, G; Pierz, K
      Millimeter wave and DC investigations of spin effects in the 2DES of AlGaAs/GaAs

      PHYSICA E
    22. Sato, Y; Gozu, S; Kita, T; Yamada, S
      An investigation of tunable spin-orbit interactions in front-gated In0.75Ga0.25As/In0.75Al0.25As heterojunctions

      PHYSICA E
    23. Oiwa, A; Slupinski, T; Munekata, H
      Effect of light illumination on the process of magnetization reversal in carrier-induced ferromagnetic semiconductors

      PHYSICA E
    24. Moriya, R; Katsumata, Y; Takatani, Y; Haneda, S; Kondo, T; Munekata, H
      Preparation and magneto-optical property of highly-resistive (Ga,Fe)As epilayers

      PHYSICA E
    25. Sato, K; Katayama-Yoshida, H
      Ferromagnetism in a transition metal atom doped ZnO

      PHYSICA E
    26. Lee, S; Dobrowolska, M; Furdyna, JK; Ram-Mohan, LR
      Enhancement of Zeeman splitting in double quantum wells containing ultrathin magnetic semiconductor layers

      PHYSICA E
    27. Oka, Y; Permogorov, S; Pittini, R; Shen, JX; Kayanuma, K; Reznitsky, A; Tenishev, L; Verbin, S
      Spin relaxation times of exciton states in ZnCdSe/ZnSe low dimensional heterostructures

      PHYSICA E
    28. Kyrychenko, FV; Kossut, J
      Excitons in diluted magnetic semiconductor quantum wires

      PHYSICA E
    29. Kuznetsov, AY; Christensen, JS; Monakhov, EV; Lindgren, AC; Radamson, HH; Nylandsted-Larsen, A; Svensson, BG
      Dopant redistribution and formation of electrically active complexes in SiGe

      MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
    30. Durand, O; Berger, V; Bisaro, R; Bouchier, A; De Rossi, A; Marcadet, X; Prevot, I
      Determination of thicknesses and interface roughnesses of GaAs-based and InAs/AlSb-based heterostructures by X-ray reflectometry

      MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
    31. Vigueras, E; Feldman, E; Yurchenko, V; Gumen, L; Krokhin, A
      Misfit dislocations in epitaxial heterostructures with different elastic constants of the substrate and epitaxial layer

      PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS ANDMECHANICAL PROPERTIES
    32. Lloyd, SJ; Tricker, DM; Barber, ZH; Blamire, MG
      Growth of niobium nitride/aluminium nitride trilayers and multilayers

      PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS ANDMECHANICAL PROPERTIES
    33. Gopal, V; Vasiliev, AL; Kvam, EP
      Strain relaxation and dislocation introduction in lattice-mismatched InAs/GaP heteroepitaxy

      PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS ANDMECHANICAL PROPERTIES
    34. Wang, TC; Zhang, YW; Chua, SJ
      Dislocation evolution in epitaxial multilayers and graded composition buffers

      ACTA MATERIALIA
    35. Boschetti, C; Bandeira, IN; Closs, H; Ueta, AY; Rappl, PHO; Motisuke, P; Abramof, E
      Molecular beam epitaxial growth of PbTe and PbSnTe on Si(100) substrates for heterojunction infrared detectors

      INFRARED PHYSICS & TECHNOLOGY
    36. Schineller, B; Protzmann, H; Luenenbuerger, M; Heuken, M; Lutsenko, EV; Yablonskii, GP
      Group-III nitride growth in production scale MOVPE systems

      JOURNAL DE PHYSIQUE IV
    37. Deenapanray, PNK; Jagadish, C
      Effect of stress on impurity-free quantum well intermixing

      ELECTROCHEMICAL AND SOLID STATE LETTERS
    38. Borca-Tasciuc, T; Achimov, D; Liu, WL; Chen, G; Ren, HW; Lin, CH; Pei, SS
      Thermal conductivity of InAs/AlSb superlattices

      MICROSCALE THERMOPHYSICAL ENGINEERING
    39. Georgiev, N; Mozume, T
      Optical properties of InGaAs/AlAsSb type I single quantum wells lattice matched to InP

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    40. Deenapanray, PNK; Jagadish, C
      Impurity-free intermixing of GaAs/AlGaAs quantum wells using SiOx capping:Effect of nitrous oxide flow rate

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    41. Guo, SP; Zhou, X; Maksimov, O; Tamargo, MC; Chi, C; Couzis, A; Maldarelli, C; Kuskovsky, IL; Neumark, GF
      Effects of Be on the II-VI/GaAs interface and on CdSe quantum dot formation

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    42. Hashizume, T; Ootomo, S; Oyama, S; Konishi, M; Hasegawa, H
      Chemistry and electrical properties of surfaces of GaN and GaN/AlGaN heterostructures

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    43. Kizhaev, SS; Molchanov, SS; Zotova, NV; Grebenshchikova, EA; Yakovlev, YP; Hulicius, E; Simecek, T; Melichar, K; Pangrac, J
      Broken-gap heterojunction in the p-GaSb-n-InAs1-xSbx (0 <= x <= 0.18) system

      TECHNICAL PHYSICS LETTERS
    44. Abramov, II; Korolev, AV
      Device structures based on resonant tunneling diodes: A theoretical consideration

      TECHNICAL PHYSICS
    45. Sukach, GA; Smertenko, PS; Oleksenko, PF; Nakamura, S
      Analysis of the active region of overheating temperature in green LEDs based on group III nitrides

      TECHNICAL PHYSICS
    46. Tkach, NV; Golovatskii, VA; Voitsekhivskaya, OM; Mikhal'ova, MY; Fartushinskii, RB
      Renormalization of the electron spectrum by confined and interface phononsin a spherical nanoheterosystem (beta-HgS/CdS)

      PHYSICS OF THE SOLID STATE
    47. Emel'yanov, AY
      Influence of domain boundary width on the statics of 90 degrees domains inepitaxial ferroelectric thin films

      PHYSICS OF THE SOLID STATE
    48. Boikov, YA; Claeson, T
      Permittivity of BaTiO3 epitaxial films grown on the YBa2Cu3O7-delta(001) surface

      PHYSICS OF THE SOLID STATE
    49. Boikov, YA; Claeson, T
      Dielectric permittivity dynamics of Ba1-xSrxTiO3 epitaxial films (x=0.75):Microstructure and depolarization effects

      PHYSICS OF THE SOLID STATE
    50. Dvurechenskii, AV; Yakimov, AI
      Type-II Ge/Si quantum dots

      SEMICONDUCTORS
    51. Karavaev, GF; Chernyshov, VN
      Electronic state mixing in X-x and X-y valleys in AlAs/GaAs (001)

      SEMICONDUCTORS
    52. Kudryashov, VE; Mamakin, SS; Turkin, AN; Yunovich, AE; Kovalev, AN; Manyakhin, FI
      Luminescence spectra and efficiency of GaN-based quantum-well heterostructure light emitting diodes: Current and voltage dependence

      SEMICONDUCTORS
    53. Odnoblyudov, VA; Kovsh, AR; Zhukov, AE; Maleev, NA; Semenova, ES; Ustinov, VM
      Thermodynamic analysis of the growth of GaAsN ternary compounds by molecular beam epitaxy

      SEMICONDUCTORS
    54. Voronina, TI; Zhurtanov, BE; Lagunova, TS; Mikhailova, MP; Moiseev, KD; Rozov, AE; Yakovlev, YP
      Type II heterojunctions in an InGaAsSb/GaSb system: Magnetotransport properties

      SEMICONDUCTORS
    55. Zotova, NV; Karandashev, SA; Matveev, BA; Remennyi, MA; Stus', NM; Talalakin, GN; Shustov, VV
      Optically pumped mid-infrared InGaAs(Sb) LEDs

      SEMICONDUCTORS
    56. Berman, LS
      Simulation of hysteresis in a metal-ferroelectric-semiconductor structure

      SEMICONDUCTORS
    57. Pozela, K
      Electron nonelastic scattering by confined and interface polar optical phonons in a modulation-doped AlGaAs/GaAs/AlGaAs quantum well

      SEMICONDUCTORS
    58. Berman, LS
      Simulation of current-voltage characteristics of a ferroelectric field-effect transistor

      SEMICONDUCTORS
    59. Sobolev, MM; Kochnev, IV; Lantratov, VM; Ledentsov, NN
      Study of electron capture by quantum dots using deep-level transient spectroscopy

      SEMICONDUCTORS
    60. Sinyavskii, EP; Grebenshchikova, EI
      The theory of the cyclotron resonance line half-width in limited-size systems

      JOURNAL OF EXPERIMENTAL AND THEORETICAL PHYSICS
    61. Yakimov, AI; Dvurechenskii, AV; Stepina, NP; Nikiforov, AI; Nenashev, AV
      Contribution of the electron-electron interaction to the optical properties of dense arrays of Ge/Si quantum dots

      JOURNAL OF EXPERIMENTAL AND THEORETICAL PHYSICS
    62. da Silva, LR; Vallejos, RO; Tsallis, C; Mendes, RS; Roux, S
      Specific heat of multifractal energy spectra - art. no. 011104

      PHYSICAL REVIEW E
    63. Jun, S; Lee, J
      Strain induced (Ba,Sr)TiO3 thin films for metal-ferroelectric-insulator-semiconductor memory devices

      INTEGRATED FERROELECTRICS
    64. Novojilov, MA; Kaul, AR; Gorbenko, OY; Wahl, G; Krause, U
      Fully MOCVD obtained epitaxial ferroelectric capacitors

      INTEGRATED FERROELECTRICS
    65. Abe, K; Yanase, N; Yasumoto, T; Ohara, R; Sano, K; Fukushima, N; Kawakubo, T
      Ferroelectric properties of epitaxial barium titanate thin film capacitorson silicon substrate

      INTEGRATED FERROELECTRICS
    66. Chen, YC; Cheng, HF; Lin, IN
      Electrical and optical properties of microwave dielectric thin films prepared by pulsed laser deposition

      INTEGRATED FERROELECTRICS
    67. Schmitt, C; Nothofer, HG; Falcou, A; Scherf, U
      Conjugated polyfluorene/polyaniline block copolymers

      MACROMOLECULAR RAPID COMMUNICATIONS
    68. Al, R; Wasa, K
      Deposition of superlattice PbTiO3/(Pb, La)TiO3

      PROGRESS IN NATURAL SCIENCE
    69. Bolshakova, I; Krukovskii, S; Korbutiak, D; Skulsky, M; Zaverbnyi, I
      Radiation resistance of GaAs-AlGaAs hetero structures doped with isovalentand rare-earth elements

      RADIATION PHYSICS AND CHEMISTRY
    70. Giovine, E; Notargiacomo, A; Di Gaspare, L; Palange, E; Evangelisti, F; Leoni, R; Castellano, G; Torrioli, G; Foglietti, V
      Investigation of SiGe-heterostructure nanowires

      NANOTECHNOLOGY
    71. Macucci, M; Iannaccone, G; Greer, J; Martorell, J; Sprung, DWL; Schenk, A; Yakimenko, II; Berggren, KF; Stokbro, K; Gippius, N
      Status and perspectives of nanoscale device modelling

      NANOTECHNOLOGY
    72. Zsebok, O; Thordson, JV; Nilsson, B; Andersson, TG
      Morphology of InGaAs/GaAs quantum wires prepared by highly controlled deep-etching techniques

      NANOTECHNOLOGY
    73. Sun, GY; Zheng, ZM; Xing, DY; Dong, JM; Wang, ZD
      Injection of spin-polarized carriers in ferromagnet/superconductor tunnel junctions

      JOURNAL OF PHYSICS-CONDENSED MATTER
    74. Pellegrino, GQ
      Persistent current and Drude weight in one-dimensional rings with substitution potentials

      JOURNAL OF PHYSICS-CONDENSED MATTER
    75. Taliercio, T; Lefebvre, P; Gallart, M; Morel, A
      Optical properties of group-III nitride quantum wells and quantum boxes

      JOURNAL OF PHYSICS-CONDENSED MATTER
    76. Xing, H; Keller, S; Wu, YF; McCarthy, L; Smorchkova, IP; Buttari, D; Coffie, R; Green, DS; Parish, G; Heikman, S; Shen, L; Zhang, N; Xu, JJ; Keller, BP; DenBaars, SP; Mishra, UK
      Gallium nitride based transistors

      JOURNAL OF PHYSICS-CONDENSED MATTER
    77. Anderson, DR; Babiker, M; Bennett, CR; Zakhleniuk, NA; Ridley, BK
      Evaluations of the low-field mobility in degenerate GaN/AlN heterojunctions

      JOURNAL OF PHYSICS-CONDENSED MATTER
    78. Shlimak, I; Safarov, VI; Vagner, ID
      Isotopically engineered silicon/silicon-germanium nanostructures as basic elements for a nuclear spin quantum computer

      JOURNAL OF PHYSICS-CONDENSED MATTER
    79. Yu, R; Zhu, BF; Wang, QM
      In-plane optical anisotropy in asymmetric Si1-xGex/Si/Si1-yGey superlattices

      JOURNAL OF PHYSICS-CONDENSED MATTER
    80. Freire, JAK; Peeters, FM; Freire, VN; Farias, GA
      Exciton trapping in magnetic wire structures

      JOURNAL OF PHYSICS-CONDENSED MATTER
    81. Rodrigues, SCP; Sipahi, GM; Scolfaro, LMR; Leite, JR
      Exchange-correlation effects on the hole miniband structure and confinement potential in zinc-blende AlxGa1-xN/GaN superlattices

      JOURNAL OF PHYSICS-CONDENSED MATTER
    82. Putero-Vuaroqueaux, M; Burle, N; Pichaud, B
      Metastability in the Matthews-Blakeslee mechanism for semiconductor film relaxation

      PHILOSOPHICAL MAGAZINE LETTERS
    83. Meng, XJ; Sun, JL; Yu, J; Wang, GS; Guo, SL; Chu, JH
      Enhanced fatigue property of PZT thin films using LaNiO3 thin layer as bottom electrode

      APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
    84. Turan, R; Aslan, B; Nur, O; Yousif, MYA; Willander, M
      Observation of strain relaxation in Si1-xGex layers by optical and electrical characterisation of a Schottky junction

      APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
    85. Song, JD; Kim, JM; Lee, YT
      Growth of highly disordered InGaP on (100) GaAs by molecular beam epitaxy with a GaP decomposition source

      APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
    86. Li, WP; Liu, YM; Zhang, R; Chen, J; Cheng, P; Yuan, XL; Zhou, YG; Shen, B; Jiang, RL; Liu, ZG; Zheng, YD
      Improvement of metal-ferroelectric-silicon structures without buffer layers between Si and ferroelectric films

      APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
    87. Ramesh, R; Aggarwal, S; Auciello, O
      Science and technology of ferroelectric films and heterostructures for non-volatile ferroelectric memories

      MATERIALS SCIENCE & ENGINEERING R-REPORTS
    88. Zielinska-Rohozinska, E; Gronkowski, J; Pakula, K; Majer, M; Regulska, M; Nowicki, L
      Strain relaxation in Ga1-xInxN thin layers grown on GaN sublayers

      JOURNAL OF ALLOYS AND COMPOUNDS
    89. Ragan, R; Min, KS; Atwater, HA
      Direct energy gap group IV semiconductor alloys and quantum dot arrays in SnxGe1-x/Ge and SnxSi1-x/Si alloy systems

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    90. Boscherini, F; Lantier, R; Rizzi, A; D'Acapito, F; Mobilio, S
      Growth at GaN/AlN hetero structures: a local view

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    91. Maekawa, S; Takahashi, S; Imamura, H
      Spin-polarized tunneling and spin injection in superconductor-ferromagnet junctions

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    92. Kraus, P; Bhattacharya, A; Nikolaev, K; Goldman, AM
      Spin injection and the interfacial conductance of ferromagnet-superconductor oxide heterostructures

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    93. Katsumoto, S; Hayashi, T; Hashimoto, Y; Iye, Y; Ishiwata, Y; Watanabe, M; Eguchi, R; Takeuchi, T; Harada, Y; Shin, S; Hirakawa, K
      Magnetism and metal-insulator transition in III-V based diluted magnetic semiconductors

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    94. Breitschadel, O; Kley, L; Grabeldinger, H; Hsieh, JT; Kuhn, B; Scholz, F; Schweizer, H
      Short-channel effects in AlGAN/GaN HEMTs

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    95. Di Gaspare, L; Fiorini, P; Scappucci, G; Evangelisti, F; Palange, E
      Defects in SiGe virtual substrates for high mobility electron gas

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    96. Yablonskii, GP; Lutsenko, EV; Pavlovskii, VN; Marko, IP; Schineller, B; Heuken, M; Heime, K
      Luminescence and lasing in GaN epitaxial layers and InGaN/GaN quantum wellheterostructures under optical and electron-beam excitation

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    97. Si, QM
      Heat transport and spin-charge separation in the normal state of high temperature superconductors

      PHYSICA C
    98. Habermeier, HU; Cristiani, G; Kremer, RK; Lebedev, O; van Tendeloo, G
      Cuprate/manganite superlattices - A model system for a bulk ferromagnetic superconductor

      PHYSICA C
    99. Bratkovsky, AM; Levanyuk, AP
      Domain structures in epitaxial ferroelastic films near and far from the phase transition

      PHYSICA C
    100. Liu, JZ; Nojima, T; Nishizaki, T; Kobayashi, N
      Spin injection in perovskite YBa2Cu3O7/La0.7Ca0.3MnO3 double layers and YBa2Cu3O7/SrTiO3/La0.7Ca0.3MnO3 trilayers in magnetic fields

      PHYSICA C


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Documento generato il 08/08/20 alle ore 14:38:22