Catalogo Articoli (Spogli Riviste)

HELP
ATTENZIONE: attualmente gli articoli Current Contents (fonte ISI) a partire dall'anno 2002 sono consultabili sulla Risorsa On-Line

Le informazioni sugli articoli di fonte ISI sono coperte da copyright

La ricerca find articoli where soggetti phrase all words 'heteroepitaxy' sort by level,fasc_key/DESCEND, pagina_ini_num/ASCEND ha restituito 498 riferimenti
Si mostrano 100 riferimenti a partire da 1
Selezionare un intervallo

Per ulteriori informazioni selezionare i riferimenti di interesse.

    1. Schreck, M; Hormann, F; Roll, H; Bauer, T; Stritzker, B
      Heteroepitaxial diamond films on silicon substrates and on iridium layers:Analogies and differences in nucleation and growth

      NEW DIAMOND AND FRONTIER CARBON TECHNOLOGY
    2. Nikiforov, AI; Cherepanov, VA; Pchelyakov, OP
      Investigation of Ge film growth on the Si(100) surface by recording diffractometry

      SEMICONDUCTORS
    3. Kawanami, H
      Heteroepitaxial technologies of III-V on Si

      SOLAR ENERGY MATERIALS AND SOLAR CELLS
    4. Carlin, JA; Ringel, SA; Fitzgerald, A; Bulsara, M
      High-lifetime GaAs on Si using GeSi buffers and its potential for space photovoltaics

      SOLAR ENERGY MATERIALS AND SOLAR CELLS
    5. Hormann, F; Schreck, M; Stritzker, B
      First stages of diamond nucleation on iridium buffer layers

      DIAMOND AND RELATED MATERIALS
    6. Yoshimoto, M; Furusawa, M; Nakajima, K; Takakura, M; Hishitani, Y
      Diamond film growth in an oxygen atmosphere

      DIAMOND AND RELATED MATERIALS
    7. Narumi, K; Naramoto, H
      AFM investigation of growth process of C-60 thin films on a KBr(001) surface

      DIAMOND AND RELATED MATERIALS
    8. Wolter, SD; Schlesser, R; Okuzumi, F; Prater, JT; Sitar, Z
      Angle-dependent reflectometry as a technique for fast assessment of highlyoriented diamond film quality

      DIAMOND AND RELATED MATERIALS
    9. Luan, HC; Wada, K; Kimerling, LC; Masini, G; Colace, L; Assanto, G
      High efficiency photodetectors based on high quality epitaxial germanium grown on silicon substrates

      OPTICAL MATERIALS
    10. Dietz, N
      Real-time optical characterization of thin film growth

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    11. Le Bourhis, E; Patriarche, G
      Plasticity of GaAs compliant substructures

      MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING
    12. Belousov, I; Svechnikov, V; Pan, V; Buzaneva, E; Linzen, S; Seidel, P; Zandbergen, HW
      Growth of YBa2Cu3O7-x thin films on silicon buffered by CoSi2 layers

      PHYSICA C
    13. Yoshino, K; Sugiyama, M; Maruoka, D; Chichibu, SF; Komaki, H; Umeda, K; Ikari, T
      Photoluminescence spectra of CuGaSe2 crystals

      PHYSICA B
    14. Alchalabi, K; Zimin, D; Zogg, H; Buttler, W
      Monolithic heteroepitaxial PbTe-on-Si infrared focal plane array with 96 x128 pixels

      IEEE ELECTRON DEVICE LETTERS
    15. Raab, A; Springholz, G
      Oswald ripening of facetted self-assembled PbSe quantum dots during annealing

      PHYSICA STATUS SOLIDI B-BASIC RESEARCH
    16. Moran, PD; Kuech, TF
      Kinetics of strain relaxation in semiconductor films grown on borosilicateglass-bonded substrates

      JOURNAL OF ELECTRONIC MATERIALS
    17. Zubia, D; Zhang, S; Bommena, R; Sun, X; Brueck, SRJ; Hersee, SD
      Initial nanoheteroepitaxial growth of GaAs on Si(100) by OMVPE

      JOURNAL OF ELECTRONIC MATERIALS
    18. Varesi, JB; Bornfreund, RE; Childs, AC; Radford, WA; Maranowski, KD; Peterson, JM; Johnson, SM; Giegerich, LM; de Lyon, TJ; Jensen, JE
      Fabrication of high-performance large-format MWIR focal plane arrays from MBE-grown HgCdTe on 4 '' silicon substrates

      JOURNAL OF ELECTRONIC MATERIALS
    19. Almeida, LA; Hirsch, L; Martinka, M; Boyd, PR; Dinan, JH
      Improved morphology and crystalline quality of MBE CdZnTe/Si

      JOURNAL OF ELECTRONIC MATERIALS
    20. Maranowski, KD; Peterson, JM; Johnson, SM; Varesi, JB; Childs, AC; Bornfreund, RE; Buell, AA; Radford, WA; de Lyon, TJ; Jensen, JE
      MBE growth of HgCdTe on silicon substrates for large format MWIR focal plane arrays

      JOURNAL OF ELECTRONIC MATERIALS
    21. Zhang, XG; Rodriguez, A; Li, P; Jain, FC; Ayers, JE
      A novel approach for the complete removal of threading dislocations from ZnSe on GaAs (001)

      JOURNAL OF ELECTRONIC MATERIALS
    22. Ikeda, K; Yanase, J; Sugahara, S; Uchida, Y; Matsumura, M
      Characterization of initial one monolayer growth of Ge on Si(100) and Si on Ge(100)

      APPLIED SURFACE SCIENCE
    23. Volz, K; Klatt, C; Ensinger, W
      Heteroepitaxial SiC films grown in Si by CH4 plasma immersion ion implantation: Conditions and mechanisms of their formation

      NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
    24. Heyn, C
      Critical coverage for strain-induced formation of InAs quantum dots - art.no. 165306

      PHYSICAL REVIEW B
    25. Penev, E; Kratzer, P; Scheffler, M
      Effect of strain on surface diffusion in semiconductor heteroepitaxy - art. no. 085401

      PHYSICAL REVIEW B
    26. Preister, C
      Modified two-dimensional to three-dimensional growth transition process inmultistacked self-organized quantum dots - art. no. 153303

      PHYSICAL REVIEW B
    27. Eddrief, M; Wang, Y; Etgens, VH; Mosca, DH; Maurice, JL; George, JM; Fert, A; Bourgognon, C
      Epitaxial growth and magnetic properties of Fe(111) films on Si(111) substrate using a GaSe(001) template - art. no. 094428

      PHYSICAL REVIEW B
    28. Rao, BV; Gruznev, D; Mori, M; Tambo, T; Tatsuyama, C
      Twinned InSb molecular layer on Si(111) substrate

      SURFACE SCIENCE
    29. Combe, N; Jensen, P; Barrat, JL
      Stable unidimensional arrays of coherent strained islands

      SURFACE SCIENCE
    30. Liaw, HM; Venugopal, R; Wan, J; Melloch, MR
      Epitaxial GaN films grown on Si(111) with varied buffer layers

      SOLID-STATE ELECTRONICS
    31. Liaw, HM; Venugopal, R; Wan, J; Melloch, MR
      Influence of the AlN buffer layer growth on AlGaN/GaN films deposited on (111)Si substrates

      SOLID-STATE ELECTRONICS
    32. Meixner, M; Scholl, E; Shchukin, VA; Bimberg, D
      Self-assembled quantum dots: Crossover from kinetically controlled to thermodynamically limited growth - art. no. 236101

      PHYSICAL REVIEW LETTERS
    33. Marquez, J; Kratzer, P; Geelhaar, L; Jacobi, K; Scheffler, M
      Atomic structure of the stoichiometric GaAs(114) surface

      PHYSICAL REVIEW LETTERS
    34. Ebert, M; Bell, KA; Flock, K; Aspnes, DE
      Investigation and control of MOVPE growth by combined spectroscopic ellipsometry and reflectance-difference spectroscopy

      PHYSICA STATUS SOLIDI A-APPLIED RESEARCH
    35. Puchinger, M; Wagner, T; Fini, P; Kisailus, D; Beck, U; Bill, J; Aldinger, F; Arzt, E; Lange, FF
      Chemical solution deposition derived buffer layers for MOCVD-grown GaN films

      JOURNAL OF CRYSTAL GROWTH
    36. Heyn, C; Dumat, C
      Formation and size evolution of self-assembled quantum dots

      JOURNAL OF CRYSTAL GROWTH
    37. Boubeta, CM; Navarro, E; Cebollada, A; Briones, F; Peiro, F; Cornet, A
      Epitaxial Fe/MgO heterostructures on GaAs(001)

      JOURNAL OF CRYSTAL GROWTH
    38. Rao, BV; Gruznev, D; Tambo, T; Tatsuyama, C
      Growth of high-quality InSb films on Si(111) substrates without buffer layers

      JOURNAL OF CRYSTAL GROWTH
    39. Sanchez-Royo, JF; Segura, A; Lang, O; Schaar, E; Pettenkofer, C; Jaegermann, W; Roa, L; Chevy, A
      Optical and photovoltaic properties of indium selenide thin films preparedby van der Waals epitaxy

      JOURNAL OF APPLIED PHYSICS
    40. Ballet, P; Smathers, JB; Yang, H; Workman, CL; Salamo, GJ
      Control of size and density of InAs/(Al, Ga)As self-organized islands

      JOURNAL OF APPLIED PHYSICS
    41. Ohlsson, BJ; Miller, MS; Gustafsson, A; Pistol, ME
      Anisotropic GaAs island phase grown on flat GaP: A Stranski-Krastanow-formed corrugated surface

      JOURNAL OF APPLIED PHYSICS
    42. Pasquariello, D; Camacho, M; Ericsson, F; Hjort, K
      Crystalline defects in InP-to-silicon direct wafer bonding

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    43. Yoshimoto, M; Itoh, M; Saraie, J; Yasui, T; Ha, S; Kurobe, T; Matsunami, H
      GaAsP pn diode on Si substrate grown by metalorganic molecular beam epitaxy for visible light-emitting devices

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    44. Nakamura, K; Itoh, M; Yoshimoto, M; Saraie, J; Matsunami, H
      Impurity doping and electrical properties of GaAsP heteroepitaxially grownon GaP and Si by metalorganic molecular beam epitaxy

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    45. Nakamura, K; Hashimoto, T; Yasui, T; Yoshimoto, M; Matsunami, H
      Lattice distortion in GaAsP heteroepitaxially grown on GaP and Si by metalorganic molecular beam epitaxy

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    46. Ferro, G; Monteil, Y
      Crystal growth in thin film of cubic silicon carbide

      VIDE-SCIENCE TECHNIQUE ET APPLICATIONS
    47. Bell, GR; Krzyzewski, TJ; Joyce, PB; Jones, TS
      Island size scaling for submonolayer growth of InAs on GaAs(001)-(2X4): Strain and surface reconstruction effects

      PHYSICAL REVIEW B
    48. Meng, S; Schroeder, BR; Olmstead, MA
      Interaction of Se and GaSe with Si(111)

      PHYSICAL REVIEW B
    49. Kang, TS; Je, JH; Kim, GB; Baik, HK; Lee, SM
      Mosaic structure of various oriented grains in CoSi2/Si(001)

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    50. He, Y; Che, JG
      A semiempirical study of the Sb/Si(001) surface

      ACTA PHYSICA SINICA
    51. Masri, P; Laridjani, MR; Wohner, T; Pezoldt, J; Averous, M
      Optimization of 3C-SiC/Si heterointerfaces in epitaxial growth

      COMPUTATIONAL MATERIALS SCIENCE
    52. He, XC; Shen, HS; Zhang, ZM; Hu, XJ; Wan, YZ; Shen, T
      Growth of CVD heteroepitaxial diamond on silicon (001) and its electronic properties

      DIAMOND AND RELATED MATERIALS
    53. Jiang, X; Fryda, M; Jia, CL
      High quality heteroepitaxial diamond films on silicon: recent progresses

      DIAMOND AND RELATED MATERIALS
    54. Huh, JM; Yoon, DY
      Enhanced nucleation of diamond on polycrystalline Ni by d.c. glow discharge in hot filament CVD

      DIAMOND AND RELATED MATERIALS
    55. Tsubota, T; Ohta, M; Kusakabe, K; Morooka, S; Watanabe, M; Maeda, H
      Heteroepitaxial growth of diamond on an iridium (100) substrate using microwave plasma-assisted chemical vapor deposition

      DIAMOND AND RELATED MATERIALS
    56. Hormann, F; Roll, H; Schreck, M; Stritzker, B
      Epitaxial Ir layers on SrTiO3 as substrates for diamond nucleation: deposition of the films and modification in the CVD environment

      DIAMOND AND RELATED MATERIALS
    57. Chang, L; Yan, JE; Chen, FR; Kai, JJ
      Deposition of heteroepitaxial diamond on 6H-SiC single crystal by bias-enhanced microwave plasma chemical vapor deposition

      DIAMOND AND RELATED MATERIALS
    58. Saada, S; Barrat, S; Bauer-Grosse, E
      Towards homogeneous and reproducible highly oriented diamond films

      DIAMOND AND RELATED MATERIALS
    59. Nonogaki, Y; Hatate, H; Oga, R; Yamamoto, S; Fujiwara, Y; Takeda, Y; Noda, H; Urisu, T
      SR-stimulated etching and OMVPE growth for semiconductor nanostructure fabrication

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    60. Lyutovich, K; Kasper, E; Ernst, F; Bauer, M; Oehme, M
      Relaxed SiGe buffer layer growth with point defect injection

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    61. Sugahara, T; Sakai, S
      Role of dislocation in InGaN/GaN quantum wells grown on bulk GaN and sapphire substrates

      IEICE TRANSACTIONS ON ELECTRONICS
    62. Yan, S; Petermann, J
      Nucleation and overgrowth of PE on PTFE/iPP interfaces

      JOURNAL OF POLYMER SCIENCE PART B-POLYMER PHYSICS
    63. Hobart, KD; Kub, FJ; Fatemi, M; Twigg, ME; Thompson, PE; Kuan, TS; Inoki, CK
      Compliant substrates: A comparative study of the relaxation mechanisms of strained films bonded to high and low viscosity oxides

      JOURNAL OF ELECTRONIC MATERIALS
    64. Aqariden, F; Shih, HD; Turner, AM; Chandra, D; Liao, PK
      Molecular beam epitaxial growth of HgCdTe on CdZnTe(311)B

      JOURNAL OF ELECTRONIC MATERIALS
    65. Sporken, R; Grajewski, D; Xin, Y; Wiame, F; Brill, G; Boieriu, P; Prociuk, A; Rujirawat, S; Dhar, NK; Sivananthan, S
      Selective epitaxy of cadmium telluride on silicon by MBE

      JOURNAL OF ELECTRONIC MATERIALS
    66. Kamp, M
      Solutions for heteroepitaxial growth of GaN and their impact on devices

      OPTICAL AND QUANTUM ELECTRONICS
    67. Holl, S; Schinagl, F; Giebultowicz, T; Krenn, H
      Monte Carlo study of fractional (111) monolayers of EuTe

      JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS
    68. Trampert, A; Ploog, KH
      Heteroepitaxy of large-misfit systems: Role of coincidence lattice

      CRYSTAL RESEARCH AND TECHNOLOGY
    69. Rao, BV; Okamoto, T; Shinmura, A; Gruznev, D; Tambo, T; Tatsuyama, C
      Role of In(4 x 1) superstructure on the heteroepitaxy of InSb on Si(111) substrate

      APPLIED SURFACE SCIENCE
    70. Mori, M; Nizawa, Y; Nishi, Y; Mae, K; Tambo, T; Tatsuyama, C
      Effect of current flow direction on the heteroepitaxial growth of InSb films on Ge/Si(001) substrate heated by direct current

      APPLIED SURFACE SCIENCE
    71. Rao, BV; Okamoto, T; Shinmura, A; Gruznev, D; Mori, M; Tambo, T; Tatsuyama, C
      Growth temperature effect on the heteroepitaxy of InSb on Si(111)

      APPLIED SURFACE SCIENCE
    72. Sumiya, T
      Initial growth stages of CaF2 on Si(111) investigated by scanning tunneling microscopy

      APPLIED SURFACE SCIENCE
    73. Wang, LG; Kratzer, P; Moll, N; Scheffler, M
      Size, shape, and stability of InAs quantum dots on the GaAs(001) substrate

      PHYSICAL REVIEW B
    74. Klust, A; Kayser, R; Wollschlager, J
      Growth kinetics of CaF2/Si(111) for a two-step deposition

      PHYSICAL REVIEW B
    75. Khor, KE; Das Sarma, S
      Quantum dot self-assembly in growth of strained-layer thin films: A kinetic Monte Carlo study

      PHYSICAL REVIEW B
    76. Lee, CH; Lin, ZD; Shang, NG; Liao, LS; Bello, I; Wang, N; Lee, ST
      Surface passivation in diamond nucleation

      PHYSICAL REVIEW B
    77. Joyce, PB; Krzyzewski, TJ; Bell, GR; Jones, TS; Malik, S; Childs, D; Murray, R
      Effect of growth rate on the size, composition, and optical properties of InAs/GaAs quantum dots grown by molecular-beam epitaxy

      PHYSICAL REVIEW B
    78. Korutcheva, E; Turiel, AM; Markov, I
      Coherent Stranski-Krastanov growth in 1+1 dimensions with anharmonic interactions: An equilibrium study

      PHYSICAL REVIEW B
    79. Mazurek, P; Daniluk, A; Paprocki, K
      Analysis of RHEED intensities during formations of the CaF2/Si(111) and MgO/YSi2-x/Si(100) interface

      VACUUM
    80. Teichert, C; Hofer, C; Lyutovich, K; Bauer, M; Kasper, E
      Interplay of dislocation network and island arrangement in SiGe films grown on Si(001)

      THIN SOLID FILMS
    81. Trofimov, VI; Mokerov, VG
      Growth mode transitions and scaling behaviour at successive stages of molecular beam epitaxy

      THIN SOLID FILMS
    82. Nakazawa, H; Suemitsu, M; Asami, S
      Gas-source MBE of SiC/Si using monomethylsilane

      THIN SOLID FILMS
    83. Hasegawa, H
      MBE growth and applications of silicon interface control layers

      THIN SOLID FILMS
    84. Pchelyakov, OP; Bolkhovityanova, YB; Dvurechenskii, AV; Nikiforov, AI; Yakimov, AI; Voigtlander, B
      Molecular beam epitaxy of silicon-germanium nanostructures

      THIN SOLID FILMS
    85. Gaiduk, PI; Larsen, AN; Hansen, JL
      Strain-relaxed SiGe/Si heteroepitaxial structures of low threading-dislocation density

      THIN SOLID FILMS
    86. Sidorov, YG; Yakushev, MV; Pridachin, DN; Varavin, VS; Burdina, LD
      The heteroepitaxy of II-VI compounds on the non-isovalent substrates (ZnTe/Si)

      THIN SOLID FILMS
    87. Tiwari, AN; Krejci, M; Haug, FJ; Zogg, H
      Heteroepitaxy of CuInxSey: a review of the material and interface properties

      THIN SOLID FILMS
    88. Wagner, G; Lange, U; Bente, K; Lenzner, J; Lorenz, M
      Structural properties of thin Zn0.62Cu0.19In0.19S alloy films grown on Si(111) substrates by pulsed laser deposition

      THIN SOLID FILMS
    89. Sawabe, A; Fukuda, H; Suzuki, T; Ikuhara, Y; Suzuki, T
      Interface between CVD diamond and iridium films

      SURFACE SCIENCE
    90. Pelzel, RI; Zepeda-Ruiz, LA; Weinberg, WH; Maroudas, D
      Effects of buffer layer thickness and film compositional grading on strainrelaxation kinetics in InAs/GaAs(111)A heteroepitaxy

      SURFACE SCIENCE
    91. Kim, JH; Weiss, AH
      The effect of adsorbed atomic hydrogen on the growth of ultrathin silicon films on Ge(100) studied by positron-annihilation-induced Auger electron spectroscopy (PAES)

      SURFACE SCIENCE
    92. Goyhenex, C; Treglia, G
      Theoretical determination of two critical sizes for strain relaxation during Co/Pt(111) heteroepitaxy

      SURFACE SCIENCE
    93. Fischer, A; Osten, HJ; Richter, H
      An equilibrium model for buried SiGe strained layers

      SOLID-STATE ELECTRONICS
    94. Yan, S; Bonnet, M; Petermann, J
      A comparison of the crystallization behavior of HDPE on oriented iPP and sPP substrates

      POLYMER
    95. Saito, Y
      Harmonic solid-on-solid model of heteroepitaxial growth

      JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN
    96. Jiang, X; Jia, CL
      Direct local epitaxy of diamond on Si(100) and surface-roughening-induced crystal misorientation

      PHYSICAL REVIEW LETTERS
    97. Utriainen, M; Lattu, H; Viirola, H; Niinisto, L; Resch, R; Friedbacher, G
      Atomic force microscopy studies of SnO2 thin film microstructures deposited by atomic layer epitaxy

      MIKROCHIMICA ACTA
    98. Guyer, JE; Barnett, SA; Voorhees, PW
      Morphological evolution of In0.26Ga0.74As grown under compression on GaAs(001) and under tension on InP(001)

      JOURNAL OF CRYSTAL GROWTH
    99. Berrie, CL; Leone, SR
      Observation of monolayer and bilayer period RHEED oscillations during epitaxial growth of Ge on Ge(100)

      JOURNAL OF CRYSTAL GROWTH
    100. Jernigan, GG; Silvestre, CL; Fatemi, M; Twigg, ME; Thompson, PE
      Composition and morphology of SiGe alloys grown on Si(100) using an Sb surfactant

      JOURNAL OF CRYSTAL GROWTH


ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 05/06/20 alle ore 05:19:31