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La ricerca find articoli where soggetti phrase all words 'growth mode' sort by level,fasc_key/DESCEND, pagina_ini_num/ASCEND ha restituito 114 riferimenti
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    1. Tong, J
      Mixed-mode crack growth from an unusual source

      FATIGUE & FRACTURE OF ENGINEERING MATERIALS & STRUCTURES
    2. Cui, JW; Li, L; Yang, JS; Yue, YJ; Li, PW; Zhang, JX; Chen, W
      The Altun fault: Its geometry, nature and mode of growth

      ACTA GEOLOGICA SINICA-ENGLISH EDITION
    3. Gruber, H; Brenner, E; Schmitt, O; Fritsch, H
      The different growth zones of the fetal foot

      ANNALS OF ANATOMY-ANATOMISCHER ANZEIGER
    4. Hinai, H; Nariki, S; Ogasawara, K; Sakai, N; Murakami, M; Otsuka, M
      Cold seeded melt growth of RE-Ba-Cu-O superconductor (RE = Gd, Y)

      PHYSICA C
    5. Bals, S; Rijnders, G; Blank, DHA; Van Tendeloo, G
      TEM of ultra-thin DyBa2Cu3O7-x films deposited on TiO2 terminated SrTiO3

      PHYSICA C
    6. Su, C; Yeh, JC; Lin, JL; Lin, JC
      The growth of Ag films on a TiO2(110)-(1 x 1) surface

      APPLIED SURFACE SCIENCE
    7. Lee, GH; Shin, BC; Kim, IS
      Critical thickness of BaTiO3 film on SrTiO3 (001) evaluated by reflection high-energy electron diffraction

      MATERIALS LETTERS
    8. Friak, M; Sob, M; Vitek, V
      Ab initio calculation of phase boundaries in iron along the bcc-fcc transformation path and magnetism of iron overlayers - art. no. 052405

      PHYSICAL REVIEW B
    9. Lee, JY; Juang, JY; Wu, KH; Uen, TM; Gou, YS
      Annealing characteristics of pulsed laser deposited homoepitaxial SrTiO3 thin films

      SURFACE SCIENCE
    10. Gheyas, SI; Strable, BL; Strongin, DR; Wright, AP
      Cl-2 surface chemistry on Cu/Si(100): an ISS, XPS, and TPD study

      SURFACE SCIENCE
    11. Kolobov, AV; Oyanagi, H; Brunner, K; Schittenhelm, P; Abstreiter, G; Tanaka, K
      Local structure of uncapped and Si-capped Ge/Si(100) self-assembled quantum dots

      APPLIED PHYSICS LETTERS
    12. Kaizu, T; Yamaguchi, K
      Self size-limiting process of InAs quantum dots grown by molecular beam epitaxy

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    13. Daudin, B; Feuillet, G; Mariette, H; Mula, G; Pelekanos, N; Molva, E; Rouviere, JL; Adelmann, C; Martinez-Guerrero, E; Barjon, J; Chabuel, F; Bataillou, B; Simon, J
      Self-assembled GaN quantum dots grown by plasma-assisted molecular beam epitaxy

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    14. Daudin, B; Feuillet, G; Mula, G; Mariette, H; Rouviere, JL; Pelekanos, N; Fishman, G; Adelmann, C; Simon, J
      Molecular beam epitaxy of GaN, AlN, InN and related alloys: from two- to three-dimensional growth mode

      DIAMOND AND RELATED MATERIALS
    15. Berbezier, I; Abdallah, M; Ronda, A; Bremond, G
      Fabrication of self-organised Ge dots using self-patterned SiGe template layer

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    16. Girardeaux, C; Tokei, Z; Clugnet, G; Rolland, A
      First stages in the formation of ultra thin nickel layers on Cu(111) and Ge(111) and dissolution: an AES comparative study

      APPLIED SURFACE SCIENCE
    17. Ronda, A; Abdallah, M; Gay, JM; Stettner, J; Berbezier, I
      Kinetic evolution of self-organised SiGe nanostructures

      APPLIED SURFACE SCIENCE
    18. Moriya, H; Nonogaki, Y; Fuchi, S; Koizumi, A; Fujiwara, Y; Takeda, Y
      Growth mode transition of InGaAs in OMVPE growth on GaP (001)

      MICROELECTRONIC ENGINEERING
    19. Stoffel, M; Simon, L; Bischoff, JL; Aubel, D; Kubler, L; Castelein, G
      Ge growth mode modification on carbon-induced Si(001)-c(4 x 4) surfaces

      THIN SOLID FILMS
    20. Mae, K; Honda, T
      Growth mode variations of thin films on nano-faceted substrates

      THIN SOLID FILMS
    21. Tillmann, K; Forster, A
      Critical dimensions for the formation of interfacial misfit dislocations of In0.6Ga0.4As islands on GaAs(001)

      THIN SOLID FILMS
    22. Schlenker, D; Miyamoto, T; Chen, ZB; Kawaguchi, M; Kondo, T; Gouardes, E; Koyama, F; Iga, K
      Critical layer thickness of 1.2-mu m highly strained GaInAs/GaAs quantum wells

      JOURNAL OF CRYSTAL GROWTH
    23. Strassburg, M; Deniozou, T; Hoffmann, A; Rodt, S; Turck, V; Heitz, R; Pohl, UW; Bimberg, D; Litvinov, D; Rosenauer, A; Gerthsen, D; Schwedhelm, S; Kudryashov, I; Lischka, K; Schikora, D
      Optical identification of quantum dot types in CdSe/ZnSe structures

      JOURNAL OF CRYSTAL GROWTH
    24. Uragami, T; Ono, K; Mizuguchi, M; Fujioka, H; Tanaka, M; Oshima, M
      The effect of S- and Se-passivation on MBE growth of MnAs thin films on GaAs(100) substrates

      JOURNAL OF CRYSTAL GROWTH
    25. Land, TA; De Yoreo, JJ
      The evolution of growth modes and activity of growth sources on canavalin investigated by in situ atomic force microscopy

      JOURNAL OF CRYSTAL GROWTH
    26. Schmidt, OG; Denker, U; Eberl, K; Kienzle, O; Ernst, F
      Effect of overgrowth temperature on the photoluminescence of Ge/Si islands

      APPLIED PHYSICS LETTERS
    27. Okajima, K; Takeda, K; Oyama, N; Ohta, E; Shiraishi, K; Ohno, T
      Phenomenological theory of semiconductor epitaxial growth with misfit-dislocations

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    28. Yamaguchi, K; Yujobo, K; Kaizu, T
      Stranski-Krastanov growth of InAs quantum dots with narrow size distribution

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    29. Connolly, P; McHugh, PE
      Fracture modelling of WC-Co hardmetals using crystal plasticity theory andthe Gurson model

      FATIGUE & FRACTURE OF ENGINEERING MATERIALS & STRUCTURES
    30. Lee, CF; Lee, KL
      EndoFEM studies in the mode I stable crack growth of fatigue precracked CTspecimen

      CHINESE JOURNAL OF MECHANICS-SERIES A
    31. Grekhov, I; Delimova, L; Liniichuk, I; Lyublinsky, A; Veselovsky, I; Titkov, A; Dunaevsky, M; Sakharov, V
      Growth mode study of ultrathin HTSC YBCO films on YBaCuNbO buffer

      PHYSICA C
    32. Sharma, PC; Alt, KW; Yeh, DY; Wang, D; Wang, KL
      Formation of nanometer-scale InAs islands on silicon

      JOURNAL OF ELECTRONIC MATERIALS
    33. Zwiller, V; Pistol, ME; Seifert, W; Samuelson, L
      Time-resolved spectroscopic studies of single indium phosphide quantum dots: Fast relaxations

      PHYSICA SCRIPTA
    34. Sakamoto, K; Kondo, D; Ushimi, Y; Harada, M; Kimura, A; Kakizaki, A; Suto, S
      Temperature dependence of the electronic structure of C-60 films adsorbed on Si(001)-(2x1) and Si(111)-(7x7) surfaces

      PHYSICAL REVIEW B-CONDENSED MATTER
    35. Roussel, JM; Saul, A; Treglia, G; Legrand, B
      Layer-by-layer versus surfactant dissolution modes in heteroepitaxy

      PHYSICAL REVIEW B-CONDENSED MATTER
    36. Ohtake, A; Yasuda, T; Hanada, T; Yao, T
      Real-time analysis of adsorption processes of Zn on the GaAs(001)-(2 x 4) surface

      PHYSICAL REVIEW B-CONDENSED MATTER
    37. Klyachko, DV; Lopez-Castillo, JM; Jay-Gerin, JP; Chen, DM
      Stress relaxation via the displacement domain formation in films of C-60 on Ge(100)

      PHYSICAL REVIEW B-CONDENSED MATTER
    38. Marcus, PM; Moruzzi, VL; Qiu, SL
      Tetragonal equilibrium states of iron

      PHYSICAL REVIEW B-CONDENSED MATTER
    39. Choi, YJ; Jeong, IC; Park, JY; Kahng, SJ; Lee, J; Kuk, Y
      Surface alloy formation of Fe on Cr(100) studied by scanning tunneling microscopy

      PHYSICAL REVIEW B-CONDENSED MATTER
    40. Liu, C; Erdmann, J; Macrander, A
      In situ spectroscopic ellipsometry as a surface-sensitive tool to probe thin film growth

      THIN SOLID FILMS
    41. Tamulevicius, S; Valkonen, MP; Laukaitis, G; Lindroos, S; Leskela, M
      Stress and surface studies of SILAR grown CdS thin films on GaAs(100)

      THIN SOLID FILMS
    42. Mori, A
      Molecular theoretical study of crystal-melt interface: Interfacial tensionand boundary between activation- and activationless-growth regimes

      JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN
    43. Wang, LG; Kratzer, P; Scheffler, M; Moll, N
      Formation and stability of self-assembled coherent islands in highly mismatched heteroepitaxy

      PHYSICAL REVIEW LETTERS
    44. Koizumi, T; Okumura, H; Balakrishnan, K; Harima, H; Inoue, T; Ishida, Y; Nagatomo, T; Nakashima, S; Yoshida, S
      Growth and characterization of cubic AlGaN and AlN epilayers by RF-plasma assisted MBE

      JOURNAL OF CRYSTAL GROWTH
    45. Mori, A; Maksimov, IL
      On the Temkin model of solid-liquid interface

      JOURNAL OF CRYSTAL GROWTH
    46. Roussel, JM; Saul, A; Treglia, G; Legrand, B
      Theoretical prediction of new dissolution modes during metal heteroepitaxy

      JOURNAL OF CRYSTAL GROWTH
    47. Seifert, W; Johansson, J; Carlsson, N; Gustafsson, A; Malm, JO
      Continuous and discontinuous metal-organic vapour phase epitaxy of coherent self-assembled islands: effects on size homogeneity

      JOURNAL OF CRYSTAL GROWTH
    48. Plank, R; Kuhn, G
      Fatigue crack propagation under non-proportional mixed mode loading

      ENGINEERING FRACTURE MECHANICS
    49. Kubo, O; Ryu, JT; Tani, H; Harada, T; Katayama, M; Oura, K
      Direct observation of strained layer formation at the initial stage of In thin film growth on Si(100)

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    50. Kawasaki, K; Tsutsui, K
      Effects of the two-step growth method for GaAs grown on CaF2/Si(111) with the electron beam surface modification technique

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    51. TANAKA S; RAMVALL P; NOMURA S; HIRAYAMA H; AOYAGI Y
      GROWTH MECHANISMS OF GAN QUANTUM DOTS AND THEIR OPTICAL-PROPERTIES

      Electronics & communications in Japan. Part 2, Electronics
    52. BORMAN VD; LEBEDINSKII YY; TROYAN VI
      ROUGHENING OF A SI(100) SURFACE-INDUCED BY THE ADSORPTION OF OXYGEN NEAR THE SOLID-OXIDE NUCLEATION THRESHOLD

      Journal of experimental and theoretical physics (Print)
    53. RYEN L; OLSSON E; EDVARDSSON CNL; HELMERSSON U
      DISLOCATIONS, STRAIN, AND DEFECTS IN HETEROEPITAXIAL YBA2CU3O7-X SRTIO3 MULTILAYERS/

      Physica. C, Superconductivity
    54. MARECHAL C; LACAZE E; SEILER W; PERRIERE J
      GROWTH MECHANISMS OF LASER-DEPOSITED BISRCACUO FILMS ON MGO SUBSTRATES

      Physica. C, Superconductivity
    55. NATORI A; TODA K; TANAKA A; YASUNAGA H
      INTERFACE ATOMIC STRUCTURES IN ALKALI-HALIDES HETEROEPITAXY

      Applied surface science
    56. PAN D; ZENG YP; KONG MY
      NEW METHOD FOR THE GROWTH OF HIGHLY UNIFORM QUANTUM DOTS

      Microelectronic engineering
    57. SCHIRMER B; FELDMANN B; WUTTIG M
      LIMITS OF METASTABLE EPITAXY - THE STRUCTURE OF ULTRATHIN FE FILMS ONCU3AU(100)

      Physical review. B, Condensed matter
    58. SOTIROPOULOU D; LADAS S
      AN XPS AND XAES STUDY OF THE NI ZRO2 INTERFACE/

      Surface science
    59. BARBIER A
      GENERALIZED-MODEL FOR INTERFACE DESCRIPTION

      Surface science
    60. RYU JT; KUI K; NODA K; KATAYAMA M; OURA K
      THE EFFECT OF HYDROGEN TERMINATION ON IN GROWTH ON SI(100) SURFACE

      Surface science
    61. XU SY; ONG CK; ZHANG X
      DIRECT MORPHOLOGY EVIDENCE OF 2-DIMENSIONAL GROWTH MODE IN PULSED-LASER DEPOSITED YBA2CU3O7-DELTA THIN-FILMS

      Solid state communications
    62. LEE S; DARUKA I; KIM CS; BARABASI AL; MERZ JL; FURDYNA JK
      DYNAMICS OF RIPENING OF SELF-ASSEMBLED II-VI SEMICONDUCTOR QUANTUM DOTS

      Physical review letters
    63. KO JM; TERADA Y; KO HJ; SHIMAMURA K; YAO T; FUKUDA T
      EPITAXIAL-GROWTH OF NDF3-ER3-BEAM EPITAXY( FILM ON CAF2(111) SUBSTRATE BY MOLECULAR)

      Journal of crystal growth
    64. OKUMURA H; BALAKRISHNAN K; HAMAGUCHI H; KOIZUMI T; CHICHIBU S; NAKANISHI H; NAGATOMO T; YOSHIDA S
      ANALYSIS OF MBE GROWTH MODE FOR GAN EPILAYERS BY RHEED

      Journal of crystal growth
    65. SHEN XQ; TANAKA S; IWAI S; AOYAGI Y
      CHEMICAL BEAM EPITAXY OF GAN USING TRIETHYLGALLIUM AND AMMONIA

      Journal of crystal growth
    66. FUNATO M; AOKI S; FUJITA S; FUJITA S
      NUCLEATION PROCESSES DURING METALORGANIC VAPOR-PHASE EPITAXY OF ZNSE ON GAAS(001)

      Journal of applied physics
    67. TU RC; SU YK; HUANG YS; CHEN GS; CHOU ST
      STRUCTURAL AND OPTICAL STUDIES OF ZNCDSE ZNSE/ZNMGSSE SEPARATE-CONFINEMENT HETEROSTRUCTURES WITH DIFFERENT BUFFER LAYERS/

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    68. STEIMETZ E; RICHTER W; SCHIENLE F; FISCHER D; KLEIN M; ZETTLER JT
      THE EFFECT OF DIFFERENT GROUP-V PRECURSORS ON THE EVOLUTION OF QUANTUM DOTS MONITORED BY OPTICAL IN-SITU MEASUREMENTS

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    69. FUJIKURA H; HANADA Y; KIHARA M; HASEGAWA H
      CONTROLLED FORMATION OF NARROW AND UNIFORM INP-BASED IN0.53GA0.47AS RIDGE QUANTUM-WIRE ARRAYS BY SELECTIVE MOLECULAR-BEAM EPITAXY

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    70. SUZUKI K; HOGG RA; TACHIBANA K; ARAKAWA Y
      DENSITY CONTROL OF GASB GAAS SELF-ASSEMBLED QUANTUM DOTS (SIMILAR-TO-25NM) GROWN BY MOLECULAR-BEAM EPITAXY/

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    71. MURAKAMI Y; HAMADA S
      A NEW METHOD FOR THE MEASUREMENT OF MODE-II FATIGUE THRESHOLD STRESS INTENSITY FACTOR RANGE DELTA-K-TAU-TH

      Fatigue & fracture of engineering materials & structures
    72. PFENNIGHAUS K; FISSEL A; KAISER U; WENDT M; KRAUSSLICH J; PEITER G; SCHROTER B; RICHTER W
      INVESTIGATION OF GROWTH-CONDITIONS FOR EPITAXIAL-GROWTH OF SIC ON SI IN THE SOLID-SOURCE MOLECULAR-BEAM EPITAXY

      Materials science & engineering. B, Solid-state materials for advanced technology
    73. KRIELAART GP; SIETSMA J; VANDERZWAAG S
      FERRITE FORMATION IN FE-C ALLOYS DURING AUSTENITE DECOMPOSITION UNDERNONEQUILIBRIUM INTERFACE CONDITIONS

      Materials science & engineering. A, Structural materials: properties, microstructure and processing
    74. CHASSE T; NEUHOLD G; PAGGEL JJ; HORN K
      INVESTIGATION OF THE SN GAP(110) INTERFACE BY CORE-LEVEL PHOTOEMISSION - INTERFACE REACTION, GROWTH-MORPHOLOGY AND SURFACE PHOTOVOLTAGE EFFECTS/

      Applied surface science
    75. RYU JT; KUI K; TANAKA Y; KATAYAMA M; OURA K; KATAYAMA I
      TOF-ICISS OBSERVATION OF PB GROWTH ON THE SI(111)-ROOT-3X-ROOT-3-AG SURFACE

      Applied surface science
    76. TOMAZ MA; INGRAM DC; HARP GR; LEDERMAN D; MAYO E; OBRIEN WL
      FE RH(100) MULTILAYER MAGNETISM PROBED BY X-RAY MAGNETIC CIRCULAR-DICHROISM/

      Physical review. B, Condensed matter
    77. KIM TW; JUNG M; LEE DU; OH E; LEE SD; JUNG HD; KIM MD; KIM JR; PARK HS; LEE JY
      STRUCTURAL AND OPTICAL-PROPERTIES OF UNDOPED AND DOPED ZNSE GAAS STRAINED HETEROSTRUCTURES/

      Thin solid films
    78. VALTUENA JF; SACEDON A; ALVAREZ AL; IZPURA I; CALLE F; CALLEJA E; MACPHERSON G; GOODHEW PJ; PACHECO FJ; GARCIA R; MOLINA SI
      INFLUENCE OF THE SURFACE-MORPHOLOGY ON THE RELAXATION OF LOW-STRAINEDINXGA1-XAS LINEAR BUFFER STRUCTURES

      Journal of crystal growth
    79. SUHARA M; NAGAO C; HONJI H; MIYAMOTO Y; FURUYA K; TAKEMURA R
      ATOMICALLY FLAT OMVPE GROWTH OF GAINAS AND INP OBSERVED BY AFM FOR LEVEL NARROWING IN RESONANT-TUNNELING DIODES

      Journal of crystal growth
    80. DELAMARRE C; LAVAL JY; WANG LP; DUBON A; SCHIFFMACHER G
      2D-3D TRANSITION IN HIGHLY STRAINED GAAS GA1-XINXAS HETEROSTRUCTURES BY TRANSMISSION ELECTRON-MICROSCOPY/

      Journal of crystal growth
    81. SHIN H; KWON YS
      FORMATION OF MACROSCOPIC STEPS DURING SELECTIVE-AREA METALORGANIC CHEMICAL-VAPOR-DEPOSITION ON GAAS-(001) VICINAL SUBSTRATES

      Journal of crystal growth
    82. OKADA Y; HARRIS JS; SUTOH A; KAWABE M
      GROWTH OF ABRUPT GAAS GE HETEROINTERFACES BY ATOMIC HYDROGEN-ASSISTEDMOLECULAR-BEAM EPITAXY/

      Journal of crystal growth
    83. BOUSQUET V; ONGARETTO C; LAUGT M; BEHRINGER M; TOURNIE E; FAURIE JP
      (001)GAAS SUBSTRATE PREPARATION FOR DIRECT ZNSE HETEROEPITAXY

      Journal of applied physics
    84. TANIKAWA A; AKIMOTO K
      ENERGY-DISPERSIVE GRAZING-INCIDENCE DIFFRACTION WITH SYNCHROTRON-RADIATION WHITE X-RAYS OF VERY THIN POLYCRYSTALLINE SILICON FILMS

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    85. ARITA M; AVRAMESCU A; UESUGI K; SUEMUNE I; NUMAI T; MACHIDA H; SHIMOYAMA N
      SELF-ORGANIZED CDSE QUANTUM DOTS ON (100)ZNSE GAAS SURFACES GROWN BY METALORGANIC MOLECULAR-BEAM EPITAXY/

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    86. TANAKA K; AKINIWA Y; NAKAMURA H
      J-INTEGRAL APPROACH TO MODE-III FATIGUE-CRACK PROPAGATION IN STEEL UNDER TORSIONAL LOADING

      Fatigue & fracture of engineering materials & structures
    87. MOURAD AHI; MAITI SK
      MODE-II STABLE CRACK-GROWTH

      Fatigue & fracture of engineering materials & structures
    88. BRINK JH; VERWOERD WS
      CALCULATION OF EDGE AND VERTEX ENERGIES OF DIAMOND MICROCRYSTALS

      DIAMOND AND RELATED MATERIALS
    89. TANAKA Y; MORISHITA H; RYU JT; KATAYAMA I; OURA K
      THIN-FILM GROWTH-MODE ANALYSIS BY LOW-ENERGY ION-SCATTERING

      Surface science
    90. KAMAT SV; HIRTH JP; ZOK FW
      THE EFFECTS OF A SINGLE-MODE-III LOADING CYCLE ON MODE-I CRACK INITIATION AND GROWTH TOUGHNESSES IN A CROSS-PLY [90-DEGREES 0-DEGREES](2S) TI-6AL-4V/SICF COMPOSITE/

      Journal of composite materials
    91. ROSENAUER A; REISINGER T; FRANZEN F; SCHUTZ G; HAHN B; WOLF K; ZWECK J; GEBHARDT W
      TRANSMISSION ELECTRON-MICROSCOPY AND REFLECTED HIGH-ENERGY ELECTRON-DIFFRACTION INVESTIGATION OF PLASTIC RELAXATION IN DOPED AND UNDOPED ZNSE GAAS(001)/

      Journal of applied physics
    92. QIAN J; FATEMI A
      MIXED-MODE FATIGUE-CRACK GROWTH - A LITERATURE SURVEY

      Engineering fracture mechanics
    93. SAITOH T; TANIMURA A; YOH K
      REGULAR ARRAY FORMATION OF SELF-ASSEMBLED INAS DOTS GROWN ON PATTERNED (111)B GAAS SUBSTRATE BY MBE

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    94. TSURUMAKI T; UEHARA S; MUKAIDA M
      DEPENDENCE OF YBA2CU3O7-X ULTRATHIN-FILM SURFACE-MORPHOLOGY ON SUBSTRATE AND GROWTH TEMPERATURE

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    95. INO S
      STUDY OF EPITAXY BY RHEED (REFLECTION HIGH-ENERGY ELECTRON DIFFRACTION)-TRAXS (TOTAL-REFLECTION ANGLE X-RAY SPECTROSCOPY)

      Analytical sciences
    96. LAMONTAGNE B; SEMOND F; ROY D
      X-RAY PHOTOELECTRON SPECTROSCOPIC STUDY OF SI(111) OXIDATION PROMOTEDBY POTASSIUM MULTILAYERS UNDER LOW O-2 PRESSURES

      Journal of electron spectroscopy and related phenomena
    97. KOBAYASHI Y; PRABHAKARAN K; OGINO T
      THERMAL CLUSTERING OF VERY THIN OXIDE FORMED ON SI SURFACES BY N2O O-2 ADSORPTION/

      Surface science
    98. YOSHIKAWA M; NOMURA T; ISHIKAWA K; HAGINO M
      GROWTH-PROCESS IN INITIAL-STAGE OF GAAS GAP(001) BY MOLECULAR-BEAM EPITAXY/

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    99. TAZOH Y; KOBAYASHI J; MUKAIDA M; MIYAZAWA S
      FABRICATION OF ALL-EPITAXIAL HIGH-T(C) SIS TUNNEL STRUCTURES

      IEICE transactions on electronics
    100. INOUE A; YAMAGUCHI T; TAKEUCHI A
      PREPARATION OF COMPOSITE ALN AND METALLIC PARTICLES IN AL-CR-M-N (M=FE, CO OR NI) SYSTEMS BY REACTION BETWEEN NITROGEN PLASMA AND MOLTEN ALLOY

      Materials transactions, JIM


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Documento generato il 05/08/20 alle ore 04:14:29