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La ricerca find articoli where soggetti phrase all words 'gallium arsenide' sort by level,fasc_key/DESCEND, pagina_ini_num/ASCEND ha restituito 1795 riferimenti
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    1. Wade, TL; Vaidyanathan, R; Happek, U; Stickney, JL
      Electrochemical formation of a III-V compound semiconductor superlattice: InAs/InSb

      JOURNAL OF ELECTROANALYTICAL CHEMISTRY
    2. Harrison, MT; McCoy, KL
      Immunosuppression by arsenic: a comparison of cathepsin L inhibition and apoptosis

      INTERNATIONAL IMMUNOPHARMACOLOGY
    3. Lisak, D; Cassidy, DT; Moore, AH
      Bonding stress and reliability of high power GaAs-based lasers

      IEEE TRANSACTIONS ON COMPONENTS AND PACKAGING TECHNOLOGIES
    4. Thomas, F; Schulz, S; Nieger, M
      A general synthetic pathway to Lewis base-stabilized, monomeric group 13/15 compounds

      EUROPEAN JOURNAL OF INORGANIC CHEMISTRY
    5. Sawamura, A; Yao, H; Kaji, M
      C and Si impurity atoms on a GaAs(001) surface

      MATERIALS TRANSACTIONS
    6. Oesterschulze, E
      Recent developments of probes for scanning probe microscopy

      ADVANCES IN IMAGING AND ELECTRON PHYSICS, VOL 118
    7. Milenin, VV; Konakova, RV
      Solid-state reactions in TiBx-GaAs contact structures upon rapid thermal annealing

      TECHNICAL PHYSICS LETTERS
    8. Galiev, GB; Mokerov, VG; Saraikin, VV; Slepnev, YV; Shagimuratov, GI; Imamov, RM; Pashaev, EM
      Study of the structural perfection and distribution/redistribution of silicon in epitaxial GaAs films grown by molecular beam epitaxy on (100), (111)A, and (111)B substrates

      TECHNICAL PHYSICS
    9. Kozlov, VA; Kozlovski, VV
      Doping of semiconductors using radiation defects produced by irradiation with protons and alpha particles

      SEMICONDUCTORS
    10. Brudnyi, VN; Kolin, NG; Merkurisov, DI; Novikov, VA
      Changes in the optical-absorption spectra of transmutation-doped GaAs as aresult of annealing

      SEMICONDUCTORS
    11. Glinchuk, KD; Litovchenko, NM; Prokhorovich, AV; Stril'chuk, ON
      An analysis of the shape of a luminescence band induced by transitions of free electrons to carbon atoms in semi-insulating undoped GaAs crystals

      SEMICONDUCTORS
    12. Galiev, GB; Mokerov, VG; Lyapin, ER; Saraikin, VV; Khabarov, YV
      A study of the electrical and optical properties of Si delta-doped GaAs layers grown by MBE on a (111)A GaAs surface misoriented toward the [2(1)over-bar(1)over-bar] direction

      SEMICONDUCTORS
    13. Ageeva, NN; Bronevoi, IL; Krivonosov, AN
      Distribution of electrons between valleys and band-gap narrowing at picosecond superluminescence in GaAs

      SEMICONDUCTORS
    14. Neubert, M; Rudolph, P
      Growth of semi-insulating GaAs crystals in low temperature gradients by using the Vapour Pressure Controlled Czochralski Method (VCz)

      PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS
    15. Wu, DG; Cahen, D; Graf, P; Naaman, R; Nitzan, A; Shvarts, D
      Direct detection of low-concentration NO in physiological solutions by a new GaAs-based sensor

      CHEMISTRY-A EUROPEAN JOURNAL
    16. Schailey, R; Ray, AK
      A cluster approach to hydrogen chemisorption on the GaAs(100) surface

      COMPUTATIONAL MATERIALS SCIENCE
    17. Mosca, R; Franchi, S; Frigeri, P; Gombia, E; Carnera, A; Peroni, M
      Influence of the As/Ga flux ratio on diffusion of Be in MBE GaAs layers

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    18. Martinez, O; Avella, M; de la Puente, E; Gonzalez, MA; Jimenez, J; Gerard, B; Gil-Lafon, E
      Selective doping of conformal GaAs layers grown by hydride vapour phase epitaxy on Si substrates studied by spatially resolved optical techniques

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    19. Niklas, JR; Siegel, W; Jurisch, M; Kretzer, U
      GaAs wafer mapping by microwave-detected photoconductivity

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    20. Cheong, SK; Bunker, BA; Hall, DC; Snider, GL; Barrios, PJ
      XAFS and X-ray reflectivity study of III-V compound native oxide/GaAs interfaces

      JOURNAL OF SYNCHROTRON RADIATION
    21. Pesare, M; Giorgio, A; Perri, AG
      Analytical modelling of multilayer structure electronic devices for electrothermal layout optimisation

      INTERNATIONAL JOURNAL OF NUMERICAL MODELLING-ELECTRONIC NETWORKS DEVICES AND FIELDS
    22. Kassemi, M; Kaforey, M; Matthiesen, D
      Effect of void-generated thermocapillary convection on dopant segregation in microgravity solidification

      JOURNAL OF THERMOPHYSICS AND HEAT TRANSFER
    23. Saitou, S; Hirokawa, T; Miyoshi, Y; Itou, O; Masuda, M; Shingu, Z
      Low distortion Multi Chip Module amplifier for CATV using GaAsFETs

      NEC RESEARCH & DEVELOPMENT
    24. Yoshikuni, N; Takeno, H; Oguma, K
      Preparation of gallium ion-selective membrane electrode by use of anion-exchange resin and its application to chemical analysis of industrial materials

      BUNSEKI KAGAKU
    25. Farina, M; Folmer, V; Bolzan, RC; Andrade, LH; Zeni, C; Braga, AL; Rocha, JBT
      Selenoxides inhibit delta-aminolevulinic acid dehydratase

      TOXICOLOGY LETTERS
    26. Sapega, VF; Ruf, T; Cardona, M
      Spin-flip raman study of exchange interactions in bulk GaAs : Mn

      PHYSICA STATUS SOLIDI B-BASIC RESEARCH
    27. Zubia, D; Zhang, S; Bommena, R; Sun, X; Brueck, SRJ; Hersee, SD
      Initial nanoheteroepitaxial growth of GaAs on Si(100) by OMVPE

      JOURNAL OF ELECTRONIC MATERIALS
    28. Okada, M; Inoue, Y; Karube, H; Niitsuya, M; Tohnori, H; Aizawa, Y; Okayasu, I; Kotani, M
      Cytotoxic evaluation of arsenic compounds in alveolar macrophages in hamsters

      APPLIED ORGANOMETALLIC CHEMISTRY
    29. Huang, CJ; Chen, JR; Huang, SP
      Silicon dioxide passivation of gallium arsenide by liquid phase deposition

      MATERIALS CHEMISTRY AND PHYSICS
    30. Murugan, P; Ramachandran, K; Krishnamurthy, N
      Local hydrogen vibrational modes in GaAs doped with chalcogenides

      CRYSTAL RESEARCH AND TECHNOLOGY
    31. Gard, FS; Riley, JD; Leckey, R; Usher, BF
      Reflection high-energy electron diffraction (RHEED) study of MBE growth ofZnSe on GaAs(111)B surfaces

      APPLIED SURFACE SCIENCE
    32. Kampen, TU; Salvan, G; Tenne, D; Scholz, R; Zahn, DRT
      Growth of organic films on passivated semiconductor surfaces: gallium arsenide versus silicon

      APPLIED SURFACE SCIENCE
    33. Gerard, I; Simon, N; Etcheberry, A
      Investigation of oxide growth and stability on n-GaAs and n-InP by coupling transient photocurrent and surface analysis

      APPLIED SURFACE SCIENCE
    34. Chiarotti, G; Chiaradia, P; Arciprete, F; Goletti, C
      Sum rules in surface differential reflectivity and reflectance anisotropy spectroscopies

      APPLIED SURFACE SCIENCE
    35. Monteverde, F; Michel, A; Eymery, JP; Desoyer, JC
      On the growth of Fe2As grains at the interface of the Fe/AlxGa1-xAs (x=0.25) system

      APPLIED SURFACE SCIENCE
    36. Bourgoin, JC
      Polycrystalline GaAs for large area imaging detectors

      NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT
    37. Markov, AV; Mezhennyi, MV; Polyakov, AY; Smirnov, NB; Govorkov, AV; Eremin, VK; Verbitskaya, EM; Gavrin, VN; Kozlova, YP; Veretenkin, YP; Bowles, TJ
      Semi-insulating LEC GaAs as a material for radiation detectors: materials science issues

      NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT
    38. Gavrin, VN; Kozlova, YP; Veretenkin, EP; Bowles, TJ; Eremin, VK; Verbitskaya, EM; Markov, AV; Polyakov, AY; Koshelev, OG; Morozova, VF
      Bulk GaAs as a solar neutrino detector

      NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT
    39. Jencic, I; Hollar, EP; Robertson, IM
      Electron-induced regrowth of isolated amorphous zones in GaAs

      NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
    40. Kim, IH
      Base resistance variation of AlGaAs/GaAs HBT by He+ ion implantation

      MATERIALS LETTERS
    41. Kim, IH
      Effects of emitter structure variation on the RF characteristics of AlGaAs/GaAs HBTs

      MATERIALS LETTERS
    42. Wang, C; Zhang, QM
      Hydrogen passivation of beryllium in p-type GaAs - art. no. 195204

      PHYSICAL REVIEW B
    43. Salis, G; Awschalom, DD; Ohno, Y; Ohno, H
      Origin of enhanced dynamic nuclear polarization and all-optical nuclear magnetic resonance in GaAs quantum wells - art. no. 195304

      PHYSICAL REVIEW B
    44. Erlingsson, SI; Nazarov, YV; Fal'ko, VI
      Nucleus-mediated spin-flip transitions in GaAs quantum dots - art. no. 195306

      PHYSICAL REVIEW B
    45. Chen, Y; Tsen, KT; Sankey, OF; Ferry, DK
      Field-induced transient hole transport in an Al0.3Ga0.7As-based p-i-n nanostructure studied by picosecond Raman spectroscopy - art. no. 195331

      PHYSICAL REVIEW B
    46. Fert, A; Jaffres, H
      Conditions for efficient spin injection from a ferromagnetic metal into a semiconductor - art. no. 184420

      PHYSICAL REVIEW B
    47. Zutic, I; Fabian, J; Das Sarma, S
      Spin injection through the depletion layer: A theory of spin-polarized p-njunctions and solar cells - art. no. 121201

      PHYSICAL REVIEW B
    48. Tereshchenko, OE; Daineka, DV; Paget, D
      Metallicity and disorder at the alkali-metal/GaAs(001) interface - art. no. 085310

      PHYSICAL REVIEW B
    49. Kavokin, KV
      Anisotropic exchange interaction of localized conduction-band electrons insemiconductors - art. no. 075305

      PHYSICAL REVIEW B
    50. Cavalleri, A; Siders, CW; Rose-Petruck, C; Jimenez, R; Toth, C; Squier, JA; Barty, CPJ; Wilson, KR; Sokolowski-Tinten, K; von Hoegen, MH; von der Linde, D
      Ultrafast x-ray measurement of laser heating in semiconductors: Parametersdetermining the melting threshold - art. no. 193306

      PHYSICAL REVIEW B
    51. Szczytko, J; Twardowski, A; Palczewska, M; Jablonski, R; Furdyna, J; Munekata, H
      Electron paramagnetic resonance of Mn in In1-xMnxAs epilayers - art. no. 085315

      PHYSICAL REVIEW B
    52. Karasawa, M; Masuda, A; Ishibashi, K; Matsumura, H
      Development of Cat-CVD apparatus - a method to control wafer temperatures under thermal influence of heated catalyzer

      THIN SOLID FILMS
    53. Yuan, K; Radhakrishnan, K; Zheng, HQ; Zhuang, QD; Ing, GI
      Characterization of linearly graded metamorphic InGaP buffer layers on GaAs using high-resolution X-ray diffraction

      THIN SOLID FILMS
    54. Delmouly, V; Bournel, A; Tremblay, G; Hesto, P
      Physical and magnetic properties of Co-oxide-GaAs contacts

      THIN SOLID FILMS
    55. Hullavarad, SS; Nikesh, VV; Sainkar, SR; Ganesan, V; Mahamuni, S; Bhoraskar, SV
      Unpinning of surface state at 0.92 eV by nanocrystalline ZnSe on GaAs

      THIN SOLID FILMS
    56. Taguchi, A; Shiraishi, K; Ito, T; Kangawa, Y
      Theoretical investigations of adatom adsorptions on the As-stabilized GaAs(111)A surface

      SURFACE SCIENCE
    57. Kangawa, Y; Ito, T; Taguchi, A; Shiraishi, K; Ohachi, T
      A new theoretical approach to adsorption-desorption behavior of Ga on GaAssurfaces

      SURFACE SCIENCE
    58. Nagashima, A; Tazima, M; Nishimura, A; Takagi, Y; Yoshino, J
      Structural analysis of GaAs(001)-c(4 x 4) with LEED IV technique

      SURFACE SCIENCE
    59. Ichimiya, A; Nishikawa, Y; Uchiyama, M
      Surface structures of the GaAs(001)2 x 4 studied by RHEED rocking curves

      SURFACE SCIENCE
    60. Itoh, M; Ohno, T
      Atomic-scale Monte Carlo study of GaAs(001)-(2 x 4) growth on vicinal surfaces

      SURFACE SCIENCE
    61. Kawamura, T; Ishii, A
      Monte Carlo simulation of recovery process after MBE growth on GaAs(100)

      SURFACE SCIENCE
    62. Joyce, PB; Krzyzewski, TJ; Steans, PH; Bell, GR; Neave, JH; Jones, TS
      Shape and surface morphology changes during the initial stages of encapsulation of InAs/GaAs quantum dots

      SURFACE SCIENCE
    63. Daineka, DV; Tereshchenko, OE; Paget, D
      Modulated photovoltage changes at the nonmetal-metal transition of the Na/GaAs(001) and K/GaAs(001) interfaces

      SURFACE SCIENCE
    64. Gonzalez, JC; Matinaga, FM; Rodrigues, WN; Moreira, MVB; de Oliveira, AG
      Ultra-narrow photoluminescence line widths in InAs quantum dots multilayers

      SURFACE SCIENCE
    65. Vergara, LI; Vidal, RA; Ferron, J; Sanchez, EA; Grizzi, O
      Growth of AlF3 thin films on GaAS(110). Structure and chemical stability

      SURFACE SCIENCE
    66. Monteverde, F; Michel, A; Guerin, P; Eymery, JP
      Epitaxial growth of Fe on GaAs by ion beam sputtering

      SURFACE SCIENCE
    67. Krzyzewski, TJ; Joyce, PB; Bell, GR; Jones, TS
      Surface morphology and reconstruction changes during heteroepitaxial growth of InAs on GaAS(001)-(2 x 4)

      SURFACE SCIENCE
    68. Dmitruk, NL; Ermolovich, IB; Fursenko, OV; Konakova, RV; Milenin, VV; Voitsikhovskyi, DI; Yastrubchak, OB
      Analytical, optical and electrophysical investigations of TiBx-GaAs interface

      SURFACE SCIENCE
    69. Etcheberry, A; Cachet, H; Cortes, R; Froment, M
      Electrodeposition of CdSe on GaAs and InP substrates

      SURFACE SCIENCE
    70. Miwa, RH; Srivastava, GP
      Sb-covered GaAs(111)B-(3x8) surface: a theoretical study

      SURFACE SCIENCE
    71. Palomares, FJ; Alonso, M; Jimenez, I; Avila, J; Sacedon, JL; Soria, F
      Electron-beam-induced reactions at O-2/GaAs(100) interfaces

      SURFACE SCIENCE
    72. Mauriz, PW; Vasconcelos, MS; Albuquerque, EL
      Surface plasmon-polaritons' contribution to the specific heat of quasiperiodic GaAS/SiO2 structures

      SURFACE SCIENCE
    73. Kucharczyk, R; Freking, U; Kruger, P; Pollmann, J
      Electronic properties of AlGaAs-based biperiodic superlattices via pseudopotential calculations

      SURFACE SCIENCE
    74. Eggeling, J; Bell, GR; Jones, TS
      Resonant vibrational excitation of H-GaAs(001) in HREELS

      SURFACE SCIENCE
    75. Yamada, T; Fujii, J; Mizoguchi, T
      STM, STS, and local work function study of Cs/p-GaAs(110)

      SURFACE SCIENCE
    76. Aloni, S; Haase, G
      The electronic nature of the Cl adatom at GaAs(110) surfaces due to Cl-2 dissociative adsorption and CCl4 photodecomposition

      SURFACE SCIENCE
    77. Pashley, DW; Neave, JH; Joyce, BA
      A model for the appearance of chevrons on RHEED patterns from InAs quantumdots

      SURFACE SCIENCE
    78. Jenichen, A; Engler, C
      Etching of GaAs(100) surfaces by HCl: density functional calculations to the mechanisms

      SURFACE SCIENCE
    79. Pesare, M; Giorgio, A; Perri, AG
      An analytical method for the thermal layout optimisation of multilayer structure solid-state devices

      SOLID-STATE ELECTRONICS
    80. Mittova, IY; Kostryukov, VF; Pshestanchik, VR; Kashkarov, VM; Prokin, AN
      Specific features of the joint influence of lead and bismuth oxides on thermal oxidation of GaAs

      RUSSIAN JOURNAL OF INORGANIC CHEMISTRY
    81. Meere, MG; King, JR
      The dissociative diffusion mechanism with charge effects I: One-dimensional in-diffusion

      QUARTERLY JOURNAL OF MECHANICS AND APPLIED MATHEMATICS
    82. Gammon, D; Efros, AL; Kennedy, TA; Rosen, M; Katzer, DS; Park, D; Brown, SW; Korenev, VL; Merkulov, IA
      Electron and nuclear spin interactions in the optical spectra of single GaAs quantum dots

      PHYSICAL REVIEW LETTERS
    83. Salis, G; Fuchs, DT; Kikkawa, JM; Awschalom, DD; Ohno, Y; Ohno, H
      Optical manipulation of nuclear spin by a two-dimensional electron gas

      PHYSICAL REVIEW LETTERS
    84. Wolf, B; Belger, A; Meyer, DC; Paufler, P
      On the impact of light on nanoindentations in ZnSe

      PHYSICA STATUS SOLIDI A-APPLIED RESEARCH
    85. Singh, AP; Kapoor, A; Tripathi, KN; Kurnar, GR
      Thermal and mechanical damage of GaAs in picosecond regime

      OPTICS AND LASER TECHNOLOGY
    86. Vanderschaeve, G; Levade, C; Caillard, D
      Dislocation mobility and electronic effects in semiconductor compounds

      JOURNAL OF MICROSCOPY-OXFORD
    87. Naumann, M; Rudolph, P; Neubert, M; Donecker, J
      Dislocation studies in VCz GaAs by laser scattering tomography

      JOURNAL OF CRYSTAL GROWTH
    88. Lee, S; Akabori, M; Shirahata, T; Takada, K; Motohisa, J; Fukui, T
      The initial stage of InGaAs growth by MOVPE on multiatomic-stepped GaAs structures

      JOURNAL OF CRYSTAL GROWTH
    89. Rehse, U; Miller, W; Frank, C; Rudolph, P; Neubert, M
      A numerical investigation of the effects of iso- and counter-rotation on the shape of the VCz growth interface

      JOURNAL OF CRYSTAL GROWTH
    90. Kajitani, T; Saravanan, R; Ono, Y; Ohno, K; Isshiki, M
      High resolution electron density distribution determination for GaAs and CdTe

      JOURNAL OF CRYSTAL GROWTH
    91. Kurabayashi, T; Kikuchi, H; Hamano, T; Nishizawa, J
      Doping method for GaAs molecular-layer epitaxy by adsorption control of impurity precursor

      JOURNAL OF CRYSTAL GROWTH
    92. Kurabayashi, T; Kono, K; Kikuchi, H; Nishizawa, J; Esashi, M
      Self-limiting growth of GaAs molecular layer epitaxy using triethyl-gallium (TEG) and AsH3

      JOURNAL OF CRYSTAL GROWTH
    93. Bhattacharya, P; Krishna, S; Phillips, J; McCann, PJ; Namjou, K
      Carrier dynamics in self-organized quantum dots and their application to long-wavelength sources and detectors

      JOURNAL OF CRYSTAL GROWTH
    94. Iizuka, K; Sakamaki, Y; Suzuki, T; Okamoto, H
      Two-step-heating sequence in arsenic-free high-temperature surface cleaning method for GaAs-AlGaAs MBE

      JOURNAL OF CRYSTAL GROWTH
    95. Zhan, HH; Horikoshi, Y
      MBE/MEE growth and characterization of C-60-doped GaAs

      JOURNAL OF CRYSTAL GROWTH
    96. Calamiotou, M; Chrysanthakopoulos, N; Lioutas, C; Tsagaraki, K; Georgakilas, A
      Microstructural differences of the two possible orientations of GaAs on vicinal (001) Si substrates

      JOURNAL OF CRYSTAL GROWTH
    97. Huang, Q; Guo, LW; Zhang, MH; Zhang, YF; Han, YJ; Zhou, JM
      Properties of deep levels and photorefractive effect in GaAs/AlGaAs multiple quantum wells grown in low temperature

      JOURNAL OF CRYSTAL GROWTH
    98. Leung, L; Davison, D; Cornfeld, A; Towner, F; Hartzell, D
      Cost-effective, high-volume molecular beam epitaxy using a multi 6-in wafer reactor

      JOURNAL OF CRYSTAL GROWTH
    99. Wang, Y; Wai, LY; Liu, H; Zhang, XX; Chang, YC; Luo, HL; Lou, LR; Fang, RC
      MBE grown monocrystalline GaAs films on polycrystalline AlN thick films for power device applications

      JOURNAL OF CRYSTAL GROWTH
    100. Hatzopoulos, Z; Cengher, D; Deligeorgis, G; Androulidaki, M; Aperathitis, E; Halkias, G; Georgakilas, A
      Molecular beam epitaxy of GaAs/AlGaAs epitaxial structures for integrated optoelectronic devices on Si using GaAs-Si wafer bonding

      JOURNAL OF CRYSTAL GROWTH


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Documento generato il 21/10/20 alle ore 10:44:22