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La ricerca find articoli where soggetti phrase all words 'field-effect transistor' sort by level,fasc_key/DESCEND, pagina_ini_num/ASCEND ha restituito 589 riferimenti
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    1. Jiang, JZ; Liu, W; Cheng, KL; Poon, KW; Ng, DKP
      Heteroleptic rare earth double-decker complexes with porphyrinato and 2,3-naphthalocyaninato ligands - Preparation, spectroscopic characterization, and electrochemical studies

      EUROPEAN JOURNAL OF INORGANIC CHEMISTRY
    2. Wurthner, F
      Plastic transistors reach maturity for mass applications in microelectronics

      ANGEWANDTE CHEMIE-INTERNATIONAL EDITION
    3. Weima, JA; Fahrner, WR; Job, R
      Experimental investigation of the parameter dependency of the removal rateof thermochemically polished CVD diamond films

      JOURNAL OF SOLID STATE ELECTROCHEMISTRY
    4. Giannazzo, F; Raineri, V; Privitera, V; Priolo, F
      High-resolution scanning capacitance microscopy by angle bevelling

      MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
    5. Shin, WC; Yang, JH; Choi, KJ; Jeon, YA; Yoon, SG
      Characteristics of Pt/YMnO3/Y2O3/Si structure using a Y2O3 buffer layer grown by pulsed laser deposition

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    6. Berman, LS
      Simulation of hysteresis in a metal-ferroelectric-semiconductor structure

      SEMICONDUCTORS
    7. Choi, KJ; Shin, WC; Yoon, SG
      Characteristics of ferroelectric YMnO3 thin films for MFISFET by MOCVD

      INTEGRATED FERROELECTRICS
    8. Liu, XH; Yin, J; Liu, ZG; Wang, L; Li, J; Zhu, XH; Chen, KJ
      Properties of PbZr(x)(T)i(1-x)O(3)/CeO2/SiO2/Si structure

      INTEGRATED FERROELECTRICS
    9. Jun, S; Lee, J
      Strain induced (Ba,Sr)TiO3 thin films for metal-ferroelectric-insulator-semiconductor memory devices

      INTEGRATED FERROELECTRICS
    10. Ullmann, M; Goebel, H; Hoenigschmid, H; Haneder, T
      Disturb free programming scheme for single transistor ferroelectric memoryarrays

      INTEGRATED FERROELECTRICS
    11. Gotz, A; Gracia, I; Cane, C; Morrissey, A; Alderman, J
      Manufacturing and packaging of sensors for their integration in a verticalMCM microsystem for biomedical applications

      JOURNAL OF MICROELECTROMECHANICAL SYSTEMS
    12. Ono, N; Okumura, H; Murashima, T
      Synthesis of oligo(thienylenevinylenes) substituted with alkoxy groups

      HETEROATOM CHEMISTRY
    13. Gaggero-Sager, LM
      Exchange and correlation via functional of Thomas-Fermi in delta-doped quantum wells

      MODELLING AND SIMULATION IN MATERIALS SCIENCE AND ENGINEERING
    14. Martinoia, S; Rosso, N; Grattarola, M; Lorenzelli, L; Margesin, B; Zen, M
      Development of ISFET array-based microsystems for bioelectrochemical measurements of cell populations

      BIOSENSORS & BIOELECTRONICS
    15. Ingebrandt, S; Yeung, CK; Krause, M; Offenhausser, A
      Cardiomyocyte-transistor-hybrids for sensor application

      BIOSENSORS & BIOELECTRONICS
    16. Xing, H; Keller, S; Wu, YF; McCarthy, L; Smorchkova, IP; Buttari, D; Coffie, R; Green, DS; Parish, G; Heikman, S; Shen, L; Zhang, N; Xu, JJ; Keller, BP; DenBaars, SP; Mishra, UK
      Gallium nitride based transistors

      JOURNAL OF PHYSICS-CONDENSED MATTER
    17. Ozturk, E; Ergun, Y; Sari, H; Sokmen, I
      The self-consistent calculation of Si delta-doped GaAs structures

      APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
    18. Hillebrandt, H; Abdelghani, A; Abdelghani-Jacquin, C; Aepfelbacher, M; Sackmann, E
      Electrical and optical characterization of thrombin-induced permeability of cultured endothelial cell monolayers on semiconductor electrode arrays

      APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
    19. Jiang, JZ; Bian, YZ; Furuya, F; Liu, W; Choi, MTM; Kobayashi, N; Li, HW; Yang, QC; Mak, TCW; Ng, DKP
      Synthesis, structure, spectroscopic properties, and electrochemistry of rare earth sandwich compounds with mixed 2,3-naphthalocyaninato and octaethylporphyrinato ligands

      CHEMISTRY-A EUROPEAN JOURNAL
    20. Lahav, M; Kharitonov, AB; Willner, I
      Imprinting of chiral molecular recognition sites in thin TiO2 films associated with field-effect transistors: Novel functionalized devices for chiroselective and chirospecific analyses

      CHEMISTRY-A EUROPEAN JOURNAL
    21. Seelmann-Eggebert, M; Meisen, P; Schaudel, F; Koidl, P; Vescan, A; Leier, H
      Heat-spreading diamond films for GaN-based high-power transistor devices

      DIAMOND AND RELATED MATERIALS
    22. Liu, YQ; Hu, WP; Qiu, WF; Xu, Y; Zhou, SQ; Zhu, DB
      Organic field-effect transistors based on Langmuir-Blodgett films of substituted phthalocyanines

      SENSORS AND ACTUATORS B-CHEMICAL
    23. Temple-Boyer, P; Launay, J; Hajji, B; Sarrabayrouse, G; Martinez, A
      Study of capacitive structures for amplifying the sensitivity of FET-basedchemical sensors

      SENSORS AND ACTUATORS B-CHEMICAL
    24. Yin, LT; Chou, JC; Chung, WY; Sun, TP; Hsiung, KP; Hsiung, SK
      Glucose ENFET doped with MnO2 powder

      SENSORS AND ACTUATORS B-CHEMICAL
    25. Kharitonov, AB; Zayats, M; Alfonta, L; Katz, E; Willner, I
      A novel ISFET-based NAD(+)-dependent enzyme sensor for lactate

      SENSORS AND ACTUATORS B-CHEMICAL
    26. Chin, YL; Chou, JC; Sun, TP; Chung, WY; Hsiung, SK
      A novel pH sensitive ISFET with on chip temperature sensing using CMOS standard process

      SENSORS AND ACTUATORS B-CHEMICAL
    27. Chin, YL; Chou, JC; Sun, TP; Liao, HK; Chung, WY; Hsiung, SK
      A novel SnO2/Al discrete gate ISFET pH sensor with CMOS standard process

      SENSORS AND ACTUATORS B-CHEMICAL
    28. Bouvet, M; Guillaud, G; Leroy, A; Maillard, A; Spirkovitch, S; Tournilhac, FG
      Phthalocyanine-based field-effect transistor as ozone sensor

      SENSORS AND ACTUATORS B-CHEMICAL
    29. Puig-Lleixa, C; Jimenez, C; Bartroli, J
      Acrylated polyurethane - photopolymeric membrane for amperometric glucose biosensor construction

      SENSORS AND ACTUATORS B-CHEMICAL
    30. Lahbabi, M; Jorio, M; Ahaitouf, A; Fliyou, M; Abarkan, E
      Temperature effect on electroluminescence spectra of silicon p-n junctionsunder avalanche breakdown condition

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    31. Melkadze, R; Khuchua, N; Tchakhnakia, Z; Makalatia, T; Didebashvili, GD; Peradze, G; Khelashvili, T; Ksaverieva, M
      Investigation of MBE grows GaAs/AlGaAs/InGaAs heterostructures

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    32. Singh, A; Bose, S; Gupta, M; Gupta, RS
      Admittance parameter and unilateral power-gain evaluation of GaN MESFET for microwave circuit applications

      MICROWAVE AND OPTICAL TECHNOLOGY LETTERS
    33. Rashmi; Haldar, S; Gupta, RS
      2-D analytical model for current-voltage characteristics and output conductance of AlGaN/GaN MODFET

      MICROWAVE AND OPTICAL TECHNOLOGY LETTERS
    34. Huang, JJ; Hattendorf, M; Feng, M; Lambert, DJH; Shelton, BS; Wong, MM; Chowdhury, U; Zhu, TG; Kwon, HK; Dupuis, RD
      Temperature dependent common emitter current gain and collector-emitter offset voltage study in AlGaN/GaN heterojunction bipolar transistors

      IEEE ELECTRON DEVICE LETTERS
    35. Dumka, DC; Cueva, G; Hier, H; Aina, OA; Adesida, I
      DC and RF characteristics of doped multichannel AlAs0.56Sb0.44/In0.53Ga0.47As field effect transistors with variable gate-lengths

      IEEE ELECTRON DEVICE LETTERS
    36. Suh, JS; Lee, JS; Kim, H
      Linearly joined carbon nanotubes

      SYNTHETIC METALS
    37. Schon, JH
      High mobilities in organic semiconductors: basic science and technology

      SYNTHETIC METALS
    38. Geens, W; Tsamouras, D; Poortmans, J; Hadziioannou, G
      Field-effect mobilities in spin-cast and vacuum-deposited PPV-type pentamers

      SYNTHETIC METALS
    39. Schon, JH; Kloc, C; Batlogg, B
      Ambipolar organic devices for complementary logic

      SYNTHETIC METALS
    40. Lima, FMS; Fanyao, Q; Nunes, OAC; Fonseca, ALA
      Electron mobility in one (two)-side modulation-doped GaAs/AlxGa1-xAs asymmetric quantum wells

      PHYSICA STATUS SOLIDI B-BASIC RESEARCH
    41. Keyser, UF; Schumacher, HW; Zeitler, U; Haug, RJ; Eberl, K
      Fabrication of quantum dots with scanning probe nanolithography

      PHYSICA STATUS SOLIDI B-BASIC RESEARCH
    42. Lin, YJ; Lee, HY; Hwang, FT; Lee, CT
      Low resistive ohmic contact formation on surface treated-n-GaN alloyed at low temperature

      JOURNAL OF ELECTRONIC MATERIALS
    43. Djurisic, AB; Bundaleski, NK; Li, EH
      The design of reflective filters based on AlxGa1-xN multilayers

      SEMICONDUCTOR SCIENCE AND TECHNOLOGY
    44. Liu, P; Nakano, H; Shirota, Y
      Synthesis and mesogenic properties of a novel family of oligothiophene derivatives

      LIQUID CRYSTALS
    45. Yin, LT; Chou, JC; Chung, WY; Sun, TP; Hsiung, SK
      Study of indium tin oxide thin film for separative extended gate ISFET

      MATERIALS CHEMISTRY AND PHYSICS
    46. Chou, JC; Wang, YF
      Temperature characteristics of a-Si : H gate ISFET

      MATERIALS CHEMISTRY AND PHYSICS
    47. Li, HW; Wang, TH
      Memory and tunneling effects in metal-semiconductor-metal contacts

      PHYSICS OF LOW-DIMENSIONAL STRUCTURES
    48. Jung, M; Kim, TW; Lee, DU; Choo, DC; Yoo, KH; Kim, DL; Kim, MD; Lim, H
      The dependence of the carrier density and the mobility on the spacer-layerthickness in modulation-doped AlxGa1-xAs/InyGa1-yAs/GaAs asymmetric singlequantum wells

      APPLIED SURFACE SCIENCE
    49. Betta, GFD; Pignatel, GU; Verzellesi, G; Boscardin, M; Fazzi, A; Bosisio, L
      Monolithic integration of Si-PIN diodes and n-channel double-gate JFET's for room temperature X-ray spectroscopy

      NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT
    50. Artigas, J; Beltran, A; Jimenez, C; Baldi, A; Mas, R; Dominguez, C; Alonso, J
      Application of ion sensitive field effect transistor based sensors to soilanalysis

      COMPUTERS AND ELECTRONICS IN AGRICULTURE
    51. Offenhausser, A; Knoll, W
      Cell-transistor hybrid systems and their potential applications

      TRENDS IN BIOTECHNOLOGY
    52. Kurmaev, EZ; Shamin, SN; Galakhov, VR; Moewes, A; Otsuka, T; Koizume, S; Endo, K; Katz, HE; Bach, M; Neumann, M; Ederer, DL; Iwami, M
      Electronic structure of thiophenes and phtalocyanines - art. no. 045211

      PHYSICAL REVIEW B
    53. Reilly, DJ; Facer, GR; Dzurak, AS; Kane, BE; Clark, RG; Stiles, PJ; Clark, RG; Hamilton, AR; O'Brien, JL; Lumpkin, NE; Pfeiffer, LN; West, KW
      Many-body spin-related phenomena in ultra low-disorder quantum wires - art. no. 121311

      PHYSICAL REVIEW B
    54. Kuball, M
      Raman spectroscopy of GaN, AlGaN and AlN for process and growth monitoring/control

      SURFACE AND INTERFACE ANALYSIS
    55. Wakida, SI; Yamane, M; Takeda, S; Siroma, Z; Tsujimura, Y; Liu, JH
      Studies on pH and nitrate checkers made of semiconductor devices for acid rain monitoring

      WATER AIR AND SOIL POLLUTION
    56. Lalinsky, T; Skriniarova, J; Kostic, I; van der Hart, A; Hrkut, P; Hascik, S; Matay, L; Mozolova, Z; Kordos, P
      T-shaped gates for heterostructure field effect transistors

      VACUUM
    57. Kaneto, K
      Carrier transports in organic materials related to functional nanometric interface controlled electronic (NICE) devices

      THIN SOLID FILMS
    58. Kudo, K; Iizuka, M; Kuniyoshi, S; Tanaka, K
      Device characteristics of lateral and vertical type organic field effect transistors

      THIN SOLID FILMS
    59. Moon, BK; Ishiwara, H; Tokumitsu, E; Yoshimoto, M
      Characteristics of ferroelectric Pb(Zr,Ti)O-3 films epitaxially grown on CeO2(111)/Si(111) substrates

      THIN SOLID FILMS
    60. Aidam, R; Schneider, R
      Growth and characterization of Pb( Zr,Ti)O-3 thin films and ferroelectric polarization charging of YBa2Cu3O7 thin films

      THIN SOLID FILMS
    61. Sanchez, J; del Valle, M
      Photocurable ISFET for anionic surfactants. Monitoring of photodegradationprocesses

      TALANTA
    62. Torsi, L; Cioffi, N; Di Franco, C; Sabbatini, L; Zambonin, PG; Bleve-Zacheo, T
      Organic thin film transistors: from active materials to novel applications

      SOLID-STATE ELECTRONICS
    63. Kim, SJ; Sugaya, T; Ogura, M; Sugiyama, Y
      Gate-length dependence of negative differential resistance in ridge-type InGaAs/InAlAs quantum wire field-effect transistor

      SOLID-STATE ELECTRONICS
    64. Kuo, CH; Sheu, JK; Chi, GC; Huang, YL; Yeh, TW
      Low-resistance Ni/Au ohmic contact to Mg-doped of Al0.15Ga0.85N/GaN superlattices

      SOLID-STATE ELECTRONICS
    65. Haque, A; Quddus, MR
      Room temperature simulation of a novel quantum wire transistor

      SOLID-STATE ELECTRONICS
    66. Pan, W; Stormer, HL; Tsui, DC; Pfeiffer, LN; Baldwin, KW; West, KW
      Experimental evidence for a spin-polarized ground state in the nu=5/2 fractional quantum Hall effect

      SOLID STATE COMMUNICATIONS
    67. Djurisic, AB; Li, EH
      Modeling the optical constants of ternary alloys using modified oscillatormodel: Application to AlxGa1-xN

      PHYSICA STATUS SOLIDI A-APPLIED RESEARCH
    68. Heringdorf, FJMZ; Reuter, MC; Tromp, RM
      Growth dynamics of pentacene thin films

      NATURE
    69. Rajendran, K; Schoenmaker, W
      Modeling of minimum surface potential and sub-threshold swing for grooved-gate MOSFETs

      MICROELECTRONICS JOURNAL
    70. Salame, C; Mialhe, P; Charles, JP
      VDMOSFET model parameter extraction based on electrical and optical measurements

      MICROELECTRONICS JOURNAL
    71. Bose, S; Adarsh; Kumar, A; Simrata; Gupta, M; Gupta, RS
      A complete analytical model of GaN MESFET for microwave frequency applications

      MICROELECTRONICS JOURNAL
    72. Schon, JH; Kloc, C; Batlogg, B
      Ballistic hole transport in pentacene with a mean free path exceeding 30 mu m

      JOURNAL OF APPLIED PHYSICS
    73. Ota, H; Fujino, H; Migita, S; Xiong, SB; Sakai, S
      All-perovskite-oxide ferroelectric memory transistor composed of Bi2Sr2CuOx and PbZr0.5Ti0.5O3 films

      JOURNAL OF APPLIED PHYSICS
    74. Sugii, N
      Thermal stability of the strained-Si/Si0.7Ge0.3 heterostructure

      JOURNAL OF APPLIED PHYSICS
    75. Manghisoni, M; Ratti, L; Re, V; Speziali, V
      Selection criteria for P- and N-channel JFETs as input elements in low-noise radiation-hard charge preamplifiers

      IEEE TRANSACTIONS ON NUCLEAR SCIENCE
    76. Maeda, S; Wada, Y; Yamamoto, K; Komurasaki, H; Matsumoto, T; Hirano, Y; Iwamatsu, T; Yamaguchi, Y; Ipposhi, T; Ueda, K; Mashiko, K; Maegawa, S; Inuishi, M
      Feasibility of 0.18 mu m SOI CMOS technology using hybrid trench isolationwith high resistivity substrate for embedded RF/analog applications

      IEEE TRANSACTIONS ON ELECTRON DEVICES
    77. Verma, MK; Pal, BB
      Analysis of buried gate MESFET under dark and illumination

      IEEE TRANSACTIONS ON ELECTRON DEVICES
    78. Polyakov, VM; Schwierz, F
      Influence of electron mobility modeling on DC I-V characteristics of WZ-GaN MESFET

      IEEE TRANSACTIONS ON ELECTRON DEVICES
    79. Yin, LT; Chou, JC; Chung, WY; Sun, TP; Hsiung, SK
      Characteristics of silicon nitride after O-2 plasma surface treatment for pH-ISFET applications

      IEEE TRANSACTIONS ON BIOMEDICAL ENGINEERING
    80. Huang, JJ; Caruth, D; Feng, M; Lambert, DJH; Shelton, BS; Wong, MM; Chowdhury, U; Zhu, TG; Kwon, HK; Dupuis, RD
      Room and low temperature study of common emitter current gain in AlGaN/GaNheterojunction bipolar transistors

      ELECTRONICS LETTERS
    81. Sun, CL; Chen, SY; Yang, MY; Chin, A
      Characteristics of Pb(Zr0.53Ti0.47)O-3 on metal and Al2O3/Si substrates

      JOURNAL OF THE ELECTROCHEMICAL SOCIETY
    82. Weima, JA; von Borany, J; Kreissig, U; Fahrner, WR
      Quantitative analysis of carbon distribution in steel used for thermochemical polishing of diamond films

      JOURNAL OF THE ELECTROCHEMICAL SOCIETY
    83. Kim, DH; Sung, SK; Sim, JS; Kim, KR; Lee, JD; Park, BG; Choi, BH; Hwang, SW; Ahn, D
      Single-electron transistor based on a silicon-on-insulator quantum wire fabricated by a side-wall patterning method

      APPLIED PHYSICS LETTERS
    84. Sakai, A; Sugimoto, K; Yamamoto, T; Okada, M; Ikeda, H; Yasuda, Y; Zaima, S
      Reduction of threading dislocation density in SiGe layers on Si (001) using a two-step strain-relaxation procedure

      APPLIED PHYSICS LETTERS
    85. Nakano, Y; Kachi, T
      Effect of N/Ge co-implantation on the Ge activation in GaN

      APPLIED PHYSICS LETTERS
    86. Wang, TH; Li, HW; Zhou, JM
      Charging effect in InAs self-assembled quantum dots

      APPLIED PHYSICS LETTERS
    87. Jun, SJ; Kim, YS; Lee, J; Kim, YW
      Dielectric properties of strained (Ba, Sr)TiO3 thin films epitaxially grown on Si with thin yttria-stabilized zirconia buffer layer

      APPLIED PHYSICS LETTERS
    88. Kim, DM
      Photovoltaic effects on pinch-off voltage and open-circuit voltage in high-electron-mobility-transistor and Schottky-diode configurations

      APPLIED PHYSICS LETTERS
    89. Ide, T; Shimizu, M; Suzuki, A; Shen, XQ; Okumura, H; Nemoto, T
      Advantages of AlN/GaN metal insulator semiconductor field effect transistor using wet chemical etching with hot phosphoric acid

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    90. Tezuka, T; Sugiyama, N; Mizuno, T; Suzuki, M; Takagi, S
      A novel fabrication technique of ultrathin and relaxed SiGe buffer layers with high Ge fraction for sub-100 run strained silicon-on-insulator MOSFETs

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    91. Tokumitsu, E; Okamoto, K; Ishiwara, H
      Low voltage operation of nonvolatile metal-ferroelectric-metal-insulator-semiconductor (MFMIS)-field-effect-transistors (FETs) using Pt/SrBi2Ta2O9/Pt/SrTa2O6/SiON/Si structures

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    92. Shields, AJ; O'Sullivan, MP; Farrer, I; Ritchie, DA; Leadbeater, ML; Patel, NK; Hogg, RA; Norman, CE; Curson, NJ; Pepper, M
      Single photon detection with a quantum dot transistor

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    93. Ryzhii, V; Shur, M
      Plasma instability and nonlinear terahertz oscillations in resonant-tunneling structures

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    94. Chin, YL; Chou, JC; Lei, ZC; Sun, TP; Chung, WY; Hsiung, SK
      Titanium nitride membrane application to extended gate field effect transistor pH sensor using VLSI technology

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    95. Chiang, JL; Chen, YC; Chou, JC
      Simulation and experimental study of the pH-sensing property for AlN thin films

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    96. Lee, JS; Kim, JW; Jung, DC; Kim, CS; Lee, WS; Lee, JH; Shin, JH; Shin, MW; Oh, JE; Lee, JH
      Photo-electrochemical gate recess etching for the fabrication of AlGaN/GaNheterostructure field effect transistor

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    97. Kalfat, R; Ben Ali, M; Mlika, R; Fekih-Romdhane, F; Jaffrezic-Renault, N
      Polysiloxane-gel matrices for ion sensitive membrane

      INTERNATIONAL JOURNAL OF INORGANIC MATERIALS
    98. Langeveld-Voss, BMW; Janssen, RAJ; Spiering, AJH; van Dongen, JLJ; Vonk, EC; Claessens, HA
      End-group modification of regioregular poly(3-alkylthiophene)s

      CHEMICAL COMMUNICATIONS
    99. Yoshida, S; Suzuki, J
      High-temperature reliability of GaN electronic devices

      MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH
    100. Li, WP; Zhang, R; Yin, J; Liu, XH; Zhou, YG; Shen, B; Chen, P; Chen, ZZ; Shi, Y; Jiang, RL; Liu, ZG; Zheng, YD
      Fabrication and characterization of metal-ferroelectric-GaN structures

      MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH


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Documento generato il 08/08/20 alle ore 15:17:05