Catalogo Articoli (Spogli Riviste)

HELP
ATTENZIONE: attualmente gli articoli Current Contents (fonte ISI) a partire dall'anno 2002 sono consultabili sulla Risorsa On-Line

Le informazioni sugli articoli di fonte ISI sono coperte da copyright

La ricerca find articoli where soggetti phrase all words 'epitaxy' sort by level,fasc_key/DESCEND, pagina_ini_num/ASCEND ha restituito 14825 riferimenti
Si mostrano 100 riferimenti a partire da 1
Selezionare un intervallo

Per ulteriori informazioni selezionare i riferimenti di interesse.

    1. Siebentritt, S; Kampschulte, T; Bauknecht, A; Blieske, U; Harneit, W; Fiedeler, U; Lux-Steiner, M
      Cd-free buffer layers for CIGS solar cells prepared by a dry process

      SOLAR ENERGY MATERIALS AND SOLAR CELLS
    2. Nair, JP; Chaure, NB; Jayakrishnan, R; Pandey, RK
      Synthesis and characterization of Sb-doped CdTe films

      JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS
    3. Li, ZQ; Bang, HJ; Piao, GX; Sawahata, J; Akimoto, K; Kinoshita, H; Watanabe, K
      Substrate roughness dependence of structural and optical properties of Eu-doped GaN grown by gas source molecular beam epitaxy

      JOURNAL OF CRYSTAL GROWTH
    4. Chaussende, D; Ferro, G; Monteil, Y
      Vapour-liquid-solid mechanism for the growth of SiC homoepitaxial layers by VPE

      JOURNAL OF CRYSTAL GROWTH
    5. Ahn, SH; Lee, SH; Nahm, KS; Suh, EK; Hong, MH
      Catalytic growth of high quality GaN micro-crystals

      JOURNAL OF CRYSTAL GROWTH
    6. Yuan, HR; Lu, DC; Liu, XL; Chen, Z; Han, P; Wang, XH; Wang, D
      Statistical investigation on morphology development of gallium nitride in initial growth stage

      JOURNAL OF CRYSTAL GROWTH
    7. Gao, YZ; Kan, H; Gao, FS; Gong, XY; Yamaguchi, T
      Improved purity of long-wavelength InAsSb epilayers grown by melt epitaxy in fused silica boats

      JOURNAL OF CRYSTAL GROWTH
    8. Lu, LW; Fong, WK; Zhu, CF; Leung, BH; Surya, C; Wang, J; Ge, WK
      Study of GaN thin films grown on intermediate-temperature buffer layers bymolecular beam epitaxy

      JOURNAL OF CRYSTAL GROWTH
    9. Kim, JS; Yu, PW; Leem, JY; Lee, JI; Noh, SK; Kim, JS; Kim, GH; Kang, SK; Ban, SI; Kim, SG; Jang, YD; Lee, UH; Yim, JS; Lee, D
      Growth of Si-doped InAs quantum dots and annealing effects on size distribution

      JOURNAL OF CRYSTAL GROWTH
    10. Kim, GH; Choi, JB; Leem, JY; Lee, JI; Noh, SK; Kim, JS; Kim, JS; Kang, SK; Ban, SI
      Optical properties of InAs epilayers grown on GaAs by molecular beam epitaxy

      JOURNAL OF CRYSTAL GROWTH
    11. Johansson, J; Seifert, W
      Kinetics of self-assembled island formation: Part I - Island density

      JOURNAL OF CRYSTAL GROWTH
    12. Johansson, J; Seifert, W
      Kinetics of self-assembled island formation: Part II - Island size

      JOURNAL OF CRYSTAL GROWTH
    13. Lu, DC; Duan, SK
      Quasi-thermo dynamic analysis of MOVPE growth of GaxAlyIn1-x-yN

      JOURNAL OF CRYSTAL GROWTH
    14. Kita, K; Wen, CJ; Otomo, J; Yamada, K; Komiyama, H; Takahashi, H
      Study on the lateral growth of silicon films from metal solutions with temperature gradient

      JOURNAL OF CRYSTAL GROWTH
    15. Innocenti, M; Forni, F; Pezzatini, G; Raiteri, R; Loglio, F; Foresti, ML
      Electrochemical behavior of As on silver single crystals and experimental conditions for InAs growth by ECALE

      JOURNAL OF ELECTROANALYTICAL CHEMISTRY
    16. Lewis, NS
      Frontiers of research in photoelectrochemical solar energy conversion

      JOURNAL OF ELECTROANALYTICAL CHEMISTRY
    17. Wade, TL; Vaidyanathan, R; Happek, U; Stickney, JL
      Electrochemical formation of a III-V compound semiconductor superlattice: InAs/InSb

      JOURNAL OF ELECTROANALYTICAL CHEMISTRY
    18. Xiao, XY; Berenz, P; Baltruschat, H; Sun, S
      An approach to the atomic structure of bulk metallic overlayers using tip-induced layer-by-layer dissolution

      JOURNAL OF ELECTROANALYTICAL CHEMISTRY
    19. Ma, ZQ; Bhattacharya, P; Rieh, JS; Ponchak, GE; Alterovitz, SA; Croke, ET
      Reliability of microwave SiGe/Si heterojunction bipolar transistors

      IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS
    20. Hall, MA; Mui, C; Musgrave, CB
      DFT study of the adsorption of chlorosilanes on the Si(100)-2 x 1 surface

      JOURNAL OF PHYSICAL CHEMISTRY B
    21. Alanyalioglu, M; Cakal, H; Ozturk, AE; Demir, U
      Electrochemical studies of the effects of pH and the surface structure of gold substrates on the underpotential deposition of sulfur

      JOURNAL OF PHYSICAL CHEMISTRY B
    22. Gundel, A; Cagnon, L; Gomes, C; Morrone, A; Schmidt, J; Allongue, P
      In-situ magnetic measurements of electrodeposited ultrathin Co, Ni and Fe/Au(111) layers

      PHYSICAL CHEMISTRY CHEMICAL PHYSICS
    23. Ward, LC; Stickney, JL
      Electrodeposition of Sb onto the low-index planes of Cu in aqueous chloride solutions: studies by LEED, AES and electrochemistry

      PHYSICAL CHEMISTRY CHEMICAL PHYSICS
    24. Sasagawa, M; Nosaka, Y
      Studies on the effects of Cd ion sources and chelating reagents on atomic layer CdS deposition by successive ionic layer adsorption and reaction (SILAR) method

      PHYSICAL CHEMISTRY CHEMICAL PHYSICS
    25. Kroemer, H
      Quasi-electric fields and band offsets: Teaching electrons new tricks (Nobel lecture)

      CHEMPHYSCHEM
    26. Alferov, ZI
      The double heterostructure: The concept and its applications in physics, electronics, and technology (Nobel lecture)

      CHEMPHYSCHEM
    27. Mougin, A; Dufour, C; Maloufi, N; Dumesnil, K; Mangin, P
      From anisotropic dots to smooth RFe2(110) single crystal layers (R = rare earth)

      EUROPEAN PHYSICAL JOURNAL B
    28. Niskanen, A; Hatanpaa, T; Ritala, M; Leskela, M
      Thermogravimetric study of volatile precursors for chemical thin film deposition. Estimation of vapor pressures and source temperatures

      JOURNAL OF THERMAL ANALYSIS AND CALORIMETRY
    29. Lashdaf, M; HatanpSS, T; Tiitta, M
      Volatile beta-diketonato complexes of ruthenium, palladium and platinum. Preparation and thermal characterization

      JOURNAL OF THERMAL ANALYSIS AND CALORIMETRY
    30. Guillet, T; Voliotis, V; Grousson, R; Ferreira, R; Wang, XL; Ogura, M
      Exchange-induced splitting of radiative exciton levels in a single quantumwire

      PHYSICA E
    31. Springholz, G; Pinczolits, M; Holy, V; Zerlauth, S; Vavra, I; Bauer, G
      Vertical and lateral ordering in self-organized quantum dot superlattices

      PHYSICA E
    32. Ploog, KH; Notzel, R
      Novel semiconductor nanostructures by functional self-organized epitaxy

      PHYSICA E
    33. Razeghi, M; Slivken, S; Tahraoui, A; Matlis, A; Park, YS
      High power 3-12 mu m infrared lasers: recent improvements and future trends

      PHYSICA E
    34. Agrawal, BK; Agrawal, S; Srivastava, R; Srivastava, P
      Valence band offsets and interface states of polar GaN/SiC (001) 2 x 2 superlattices

      PHYSICA E
    35. Zanelato, G; Pusep, YA; Galzerani, JC; Lubyshev, DI; Gonzalez-Borrero, PP
      Raman study of the segregation of GaAs/AlAs heterostructures grown by molecular beam epitaxy

      PHYSICA E
    36. Hayashi, T; Hashimoto, Y; Yoshida, S; Katsumoto, S; Iye, Y
      Control of material parameters and metal-insulator transition in (Ga,Mn)As

      PHYSICA E
    37. Heimbrodt, W; Hartmann, T; Klar, PJ; Lampalzer, M; Stolz, W; Volz, K; Schaper, A; Treutmann, W; von Nidda, HAK; Loidl, A; Ruf, T; Sapega, VF
      Monitoring the sign reversal of the valence band exchange integral in (Ga,Mn)As

      PHYSICA E
    38. Sadowski, J; Mathieu, R; Svedlindh, P; Karlsteen, M; Kanski, J; Ilver, L; Asklund, H; Swiatek, K; Domagala, JZ; Bak-Misiuk, J; Maude, D
      Properties of GaMnAs layers grown by migration enhanced epitaxy at very low substrate temperatures

      PHYSICA E
    39. Tazima, M; Yamamoto, K; Okazawa, D; Nagashima, A; Yoshino, J
      Effect of Mn on the low temperature growth of GaAs and GaMnAs

      PHYSICA E
    40. Moriya, R; Katsumata, Y; Takatani, Y; Haneda, S; Kondo, T; Munekata, H
      Preparation and magneto-optical property of highly-resistive (Ga,Fe)As epilayers

      PHYSICA E
    41. Kuwabara, S; Ishii, K; Haneda, S; Kondo, T; Munekata, H
      Preparation of wurtzite GaN-based magnetic alloy semiconductors by molecular beam epitaxy

      PHYSICA E
    42. Chiba, D; Akiba, N; Matsukura, F; Ohno, Y; Ohno, H
      Properties of (Ga,Mn)As/(Al,Ga)As/(Ga,Mn)As magnetic trilayer structures

      PHYSICA E
    43. Kuroda, S; Umakoshi, N; Terai, Y; Takita, K
      Self-organized quantum dots of Cd1-xMnxTe: MBE growth on Zn(Cd)Te surface and magneto-photoluminescence

      PHYSICA E
    44. Koide, T; Isogai, Y; Fujiwara, Y; Takeda, Y
      OMVPE growth and properties of Dy-doped III-V semiconductors

      PHYSICA E
    45. Haneda, S; Koshihara, S; Munekata, H
      Formation of FeAs and Fe crystallites in GaAs-Fe composite structures and their roles in light-enhanced magnetization

      PHYSICA E
    46. Akinaga, H; Mizuguchi, M; Manago, T; Sato, T; Kuramochi, H; Ono, K; Ofuchi, H; Oshima, M
      Magnetoresistive switch effect in MnSb granular films grown on sulfur-passivated GaAs: more-than 10 000% magnetoresistance effect at room-temperature

      PHYSICA E
    47. Vernon-Parry, KD; Abd-El-Rahman, KF; Brough, I; Evans-Freeman, JH; Zhang, J; Peaker, AR
      The use of electron back-scattered diffraction to study the regrowth of amorphised silicon-based heterostructures

      MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
    48. Krier, A
      Physics and technology of mid-infrared light emitting diodes

      PHILOSOPHICAL TRANSACTIONS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL PHYSICAL AND ENGINEERING SCIENCES
    49. Mohammad, SN
      Trap-assisted recombination in semiconductors: application to group III gallium nitride material and junctions

      PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICSELECTRONIC OPTICAL AND MAGNETIC PROPERTIES
    50. Mohammad, SN; Fan, ZF; Botchkarev, AE; Kim, W; Aktas, O; Morkoc, H; Shiwei, F; Jones, KA; Derenge, MA
      Physical mechanisms underlying anomalous capacitance characteristics of platinum-gallium nitride Schottky diodes

      PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICSELECTRONIC OPTICAL AND MAGNETIC PROPERTIES
    51. Pownall, CD; Mulheran, PA
      Simulations of growing ordered arrays of islands on substrate steps

      PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICSELECTRONIC OPTICAL AND MAGNETIC PROPERTIES
    52. Smith, DJ; Todd, M; McMurran, J; Kouvetakis, J
      Structural properties of heteroepitaxial germanium-carbon alloys grown on Si (100)

      PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS ANDMECHANICAL PROPERTIES
    53. Jiao, S; Hirsch, PB; Perovic, DD
      Climb/glide dislocation sources at low-misfit GexSi1-x-Si(001) interfaces

      PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS ANDMECHANICAL PROPERTIES
    54. Putero, M; Burle, N; Pichaud, B
      Misfit dislocation cross-slip at the first stages of plastic relaxation inlow-mismatch heterostructures

      PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS ANDMECHANICAL PROPERTIES
    55. Grange, W; Ulhaq-Bouillet, C; Maret, M; Thibault, J
      Chemical long-range ordering in a CoPt alloy film grown by molecular beam epitaxy

      ACTA MATERIALIA
    56. Yang, YG; Zhou, XW; Johnson, RA; Wadley, HNG
      Monte Carlo simulation of hyperthermal physical vapor deposition

      ACTA MATERIALIA
    57. Fastenau, JM; Liu, WK; Fang, XM; Lubyshev, DI; Pelzel, RI; Yurasits, TR; Stewart, TR; Lee, JH; Li, SS; Tidrow, MZ
      Commercial production of QWIP wafers by molecular beam epitaxy

      INFRARED PHYSICS & TECHNOLOGY
    58. Boschetti, C; Bandeira, IN; Closs, H; Ueta, AY; Rappl, PHO; Motisuke, P; Abramof, E
      Molecular beam epitaxial growth of PbTe and PbSnTe on Si(100) substrates for heterojunction infrared detectors

      INFRARED PHYSICS & TECHNOLOGY
    59. Li, L; Kida, A; Ohnishi, M; Koike, K; Matsui, M
      Effect of adsorbed oxygen on initial growth of Fe on Cu(111)

      MATERIALS TRANSACTIONS
    60. Sawamura, A; Yao, H; Kaji, M
      C and Si impurity atoms on a GaAs(001) surface

      MATERIALS TRANSACTIONS
    61. Kopf, A; Lux, B; Haubner, R
      Substrate effects during nucleation and growth of CVD diamond

      NEW DIAMOND AND FRONTIER CARBON TECHNOLOGY
    62. Hicks, RF; Fu, Q; Li, L; Visbeck, SB; Sun, Y; Li, CH; Law, DC
      The role of atomic surface structure in the metalorganic chemical vapor deposition of III-V compound semiconductors

      JOURNAL DE PHYSIQUE IV
    63. Kovalgin, A; Holleman, J
      A study of morphology and texture of LPCVD germanium-silicon films

      JOURNAL DE PHYSIQUE IV
    64. Pawlowski, RP; Salinger, AG; Romero, LA; Shadid, JN
      Computational design and analysis of MOVPE reactors

      JOURNAL DE PHYSIQUE IV
    65. Mathur, S; Veith, M; Sivakov, V; Shen, H; Gao, HB
      Composition, morphology and particle size control in nanocrystalline iron oxide films grown by single-source CVD

      JOURNAL DE PHYSIQUE IV
    66. Norman, JAT
      Advances in copper CVD for the semiconductor industry

      JOURNAL DE PHYSIQUE IV
    67. Chen, GC; Kim, MC; Kim, TH; Lee, SB; Boo, JH
      Growth of BON thin films by plasma assisted MOCVD and study of deposition parameter effects on the film structure

      JOURNAL DE PHYSIQUE IV
    68. Rahtu, A; Hanninen, T; Ritala, M
      In situ characterization of atomic layer deposition of SrTiO3

      JOURNAL DE PHYSIQUE IV
    69. Losurdo, M; Grimaldi, A; Giangregorio, M; Capezzuto, P; Bruno, G
      GaN heteroepitaxy by remote plasma MOCVD: Real time monitoring by laser reflectance interferometry

      JOURNAL DE PHYSIQUE IV
    70. Hsu, CH; Ip, KP; Johnson, JW; Chu, SNG; Kryliouk, O; Pearton, SJ; Li, L; Chai, BHT; Anderson, TJ; Ren, F
      Wet chemical etching of LiGaO2 and LiAlO2

      ELECTROCHEMICAL AND SOLID STATE LETTERS
    71. Morishita, Y; Kawai, S; Sunagawa, J; Suzuki, T
      Magnetic-field-assisted anodization of GaAs substrates

      ELECTROCHEMICAL AND SOLID STATE LETTERS
    72. Shi, Y; Liu, B; Liu, LH; Edgar, JH; Payzant, EA; Hayes, JM; Kuball, M
      New technique for sublimation growth of AlN single crystals

      MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH
    73. Buyanova, IA; Chen, WM; Monemar, B
      Electronic properties of Ga(In)NAs alloys

      MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH
    74. Davis, RF; Gehrke, T; Linthicum, KJ; Rajagopal, P; Roskowski, AM; Zheleva, T; Preble, EA; Zorman, CA; Mehregany, M; Schwarz, U; Schuck, J; Grober, R
      Review of pendeo-epitaxial growth and characterization of thin films of GaN and AlGaN alloys on 6H-SiC(0001) and Si(111) substrates

      MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH
    75. Dulk, M; Dobeli, M; Melchior, H
      Fabrication of saturable absorbers in InGaAsP-InP bulk semiconductor laserdiodes by heavy ion implantation

      IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
    76. Nunoya, N; Nakamura, M; Morshed, M; Tamura, S; Arai, S
      High-performance 1.55-mu m wavelength GaInAsP-InP distributed-feedback lasers with wirelike active regions

      IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
    77. Shimizu, H; Kumada, K; Uchiyama, S; Kasukawa, A
      High-performance CW 1.26-mu m GaInNAsSb-SQW ridge lasers

      IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
    78. Georgiev, N; Mozume, T
      Optical properties of InGaAs/AlAsSb type I single quantum wells lattice matched to InP

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    79. Chung, MS; Lin, WT; Gong, JR
      Formation of Hf ohmic contacts by surface treatment of n-GaN in KOH solutions

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    80. Visconti, P; Reshchikov, MA; Jones, KM; Wang, DF; Cingolani, R; Morkoc, H; Molnar, RJ; Smith, DJ
      Highly selective photoelectrochemical etching of nitride materials for defect investigation and device fabrication

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    81. Adamcyk, M; Tixier, S; Ruck, BJ; Schmid, JH; Tiedje, T; Fink, V; Jeffries, M; Karaiskaj, D; Kavanagh, KL; Thewalt, M
      Faceting transition in epitaxial growth of dilute GaNAs films on GaAs

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    82. Hong, SK; Hanada, T; Makino, H; Ko, HJ; Chen, YF; Yao, T; Tanaka, A; Sasaki, H; Sato, S; Imai, D; Araki, K; Shinohara, M
      ZnO epilayers on GaN templates: Polarity control and valence-band offset

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    83. Chun, SH; Berry, JJ; Ku, KC; Samarth, N; Malajovich, I; Awschalom, DD
      Growth and characterization of MnAs/ZnSe ferromagnet/semiconductor hybrid heterostructures

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    84. Ghosh, S; Lenihan, AS; Dutt, MVG; Qasaimeh, Q; Steel, DG; Bhattacharya, P
      Nonlinear optical and electro-optic properties of InAs/GaAs self-organizedquantum dots

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    85. Poole, PJ; McCaffrey, J; Williams, RL; Lefebvre, J; Chithrani, D
      Chemical beam epitaxy growth of self-assembled InAs/InP quantum dots

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    86. Li, HX; Daniels-Race, T; Hasan, MA
      Lateral correlation of InAs/AlInAs nanowire superlattices on InP(001)

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    87. Maksimov, O; Guo, SP; Fernandez, F; Tamargo, MC; Peiris, FC; Furdyna, JK
      High reflectivity symmetrically strained ZnxCdyMg1-x-ySe-based distributedBragg reflectors for current injection devices

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    88. Lubyshev, D; Liu, WK; Stewart, TR; Cornfeld, AB; Fang, XM; Xu, X; Specht, P; Kisielowski, C; Naidenkova, M; Goorsky, MS; Whelan, CS; Hoke, WE; Marsh, PF; Millunchick, JM; Svensson, SP
      Strain relaxation and dislocation filtering in metamorphic high electron mobility transistor structures grown on GaAs substrates

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    89. Kuhl, AG; Ares, R; Streater, RW
      Effect of growth rate on surface morphology of heavily carbon-doped InGaAs

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    90. Preisler, EJ; Marsh, OJ; Beach, RA; McGill, TC
      Stability of cerium oxide on silicon studied by x-ray photoelectron spectroscopy

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    91. Lee, CD; Feenstra, RM; Rosa, AL; Neugebauer, J; Northrup, JE
      Silicon on GaN(0001) and (000(1)over-bar) surfaces

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    92. Nosho, BZ; Bennett, BR; Whitman, LJ; Goldenberg, M
      Effects of As-2 versus As-4 on InAs/GaSb heterostructures: As-for-Sb exchange and film stability

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    93. Guo, SP; Zhou, X; Maksimov, O; Tamargo, MC; Chi, C; Couzis, A; Maldarelli, C; Kuskovsky, IL; Neumark, GF
      Effects of Be on the II-VI/GaAs interface and on CdSe quantum dot formation

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    94. LaBella, VP; Ding, Z; Bullock, DW; Emery, C; Thibado, PM
      Microscopic structure of spontaneously formed islands on the GaAs(001)-(2X4) reconstructed surface

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    95. McKay, HA; Feenstra, RM; Schmidtling, T; Pohl, UW; Geisz, JF
      Distribution of nitrogen atoms in dilute GaAsN and InGaAsN alloys studied by scanning tunneling microscopy

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    96. Hingerl, K; Balderas-Navarro, RE; Bonanni, A; Stifter, D
      Influence of anisotropic in-plane strain on critical point resonances in reflectance difference data

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    97. Hashizume, T; Ootomo, S; Oyama, S; Konishi, M; Hasegawa, H
      Chemistry and electrical properties of surfaces of GaN and GaN/AlGaN heterostructures

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    98. Choi, KJ; Lee, JL
      Surface states on n-type Al0.24Ga0.76As characterized by deep-level transient spectroscopy

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    99. Legge, M; Bacher, G; Bader, S; Kummell, T; Forchel, A; Nurnberger, J; Schumacher, C; Faschinger, W; Landwehr, G
      Selective ultrahigh vacuum dry etching process far ZnSe-based II-VI semiconductors

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    100. Yuh, HK; Park, JW; Lim, SH; Hwang, KH; Yoon, E
      Low-temperature Si epitaxial growth on oxide patterned wafers by ultrahighvacuum electron cyclotron resonance chemical vapor deposition

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B


ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 14/08/20 alle ore 10:31:28