Catalogo Articoli (Spogli Riviste)

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La ricerca find articoli where soggetti phrase all words 'dichlorosilane' sort by level,fasc_key/DESCEND, pagina_ini_num/ASCEND ha restituito 51 riferimenti
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    1. Hall, MA; Mui, C; Musgrave, CB
      DFT study of the adsorption of chlorosilanes on the Si(100)-2 x 1 surface

      JOURNAL OF PHYSICAL CHEMISTRY B
    2. Shimizu, S; Komaru, T; Okawa, K; Azuma, M; Kamiya, T; Fortmann, CM; Shimizu, I
      Properties of amorphous silicon solar cells fabricated from SiH2Cl2

      SOLAR ENERGY MATERIALS AND SOLAR CELLS
    3. Guo, LH; Kondo, M; Matsuda, A
      Microcrystalline Si films deposited from dichlorosilane using RF-PECVD

      SOLAR ENERGY MATERIALS AND SOLAR CELLS
    4. Nishizawa, M; Yasuda, T; Yamasaki, S; Shinohara, M; Kamakura, N; Kimura, Y; Niwano, M
      Chlorosilane adsorption on clean Si surfaces: Scanning tunneling microscopy and Fourier-transform infrared absorption spectroscopy studies

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
    5. Zhang, QZ; Miao, Z; Wang, CS; Wang, SK; Gu, YS
      Theoretical studies on abstraction reaction of H with SiH2Cl2

      ACTA CHIMICA SINICA
    6. Guo, XY; Brault, P
      Early stages of silicon nitride film growth studied by molecular dynamics simulations

      SURFACE SCIENCE
    7. Akazawa, H
      Contribution of dangling-bond regeneration channels in the synchrotron-radiation-excited epitaxy of Si from SiH2Cl2

      JOURNAL OF APPLIED PHYSICS
    8. Hong, LS; Wu, CM
      Composition determining mechanism in synthesis of silicon carbide films from SiH2Cl2/C2H2 chemical vapor deposition system

      JOURNAL OF THE CHINESE INSTITUTE OF CHEMICAL ENGINEERS
    9. Wang, CF; Tsai, DS
      Low pressure chemical vapor deposition of silicon carbide from dichlorosilane and acetylene

      MATERIALS CHEMISTRY AND PHYSICS
    10. Hildebrandt, H; Engels, B
      On the mechanism of the disproportionation of chlorinated silanes under the influence of Lewis bases

      ZEITSCHRIFT FUR ANORGANISCHE UND ALLGEMEINE CHEMIE
    11. Lengyel, I; Jensen, KF
      A chemical mechanism for in situ boron doping during silicon chemical vapor deposition

      THIN SOLID FILMS
    12. Mulato, M; Chen, Y; Wagner, S; Zanatta, AR
      Microcrystalline silicon with high electron field-effect mobility deposited at 230 degrees C

      JOURNAL OF NON-CRYSTALLINE SOLIDS
    13. Mulato, M; Wagner, S; Zanatta, AR
      Effects of SiH2Cl2 on the deposition and properties of amorphous and microcrystalline silicon fabricated from very high frequency glow discharges

      JOURNAL OF THE ELECTROCHEMICAL SOCIETY
    14. Satoh, Y; Ikeda, K; Sugahara, S; Matsumura, M
      Atomic-layer epitaxy of silicon on (100) surface

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    15. Hori, T; Sakamoto, H; Takakuwa, Y; Enta, Y; Kato, H; Miyamoto, N
      In situ observation of a high-temperature Si(001) surface during SiH2Cl2 exposure by photoelectron spectroscopy

      THIN SOLID FILMS
    16. Shimizu, S; Komaru, T; Okawa, K; Azuma, M; Kamiya, T; Fortmann, CM; Shimizu, I
      Fabrication of solar cells having SiH2Cl2 based I-layer materials

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    17. SWIHART MT; CARR RW
      ON THE MECHANISM OF HOMOGENEOUS DECOMPOSITION OF THE CHLORINATED SILANES - CHAIN-REACTIONS PROPAGATED BY DIVALENT SILICON SPECIES

      The journal of physical chemistry. A, Molecules, spectroscopy, kinetics, environment, & general theory
    18. PALMER MH; BLAIRFISH JA
      HALOGEN NUCLEAR-QUADRUPOLE COUPLING-CONSTANTS IN NON-AXIALLY SYMMETRICAL MOLECULES - AB-INITIO CALCULATIONS, WHICH INCLUDE CORRELATION, COMPARED WITH EXPERIMENT

      Zeitschrift fur Naturforschung. A, A journal of physical sciences
    19. SAKAMOTO H; TAKAKUWA Y; HORI T; ENTA Y; KATO H; MIYAMOTO N
      DEVELOPMENT OF A 3-ELECTRODE-LENS DRIFT-TUBE FOR TIME-OF-FLIGHT MASS-SPECTROMETRY

      Journal of synchrotron radiation
    20. HASUNUMA E; SUGAHARA S; HOSHINO S; IMAI S; IKEDA K; MATSUMURA M
      GAS-PHASE-REACTION-CONTROLLED ATOMIC-LAYER-EPITAXY OF SILICON

      Journal of vacuum science & technology. A. Vacuum, surfaces, and films
    21. KOMURA T; OKANO S; MORIKAWA K; HANADA T; YOSHIMURA M; YAO T
      SCANNING-TUNNELING-MICROSCOPY STUDY OF THE INITIAL REACTION OF SIH2CL2 MOLECULES WITH THE SI(111)-7X7 SURFACE

      Applied surface science
    22. ADACHI JY; MCINTOSH BC; BADT DE
      INTEGRATED TUNGSTEN POLYCIDE - ANALYSIS OF INTERFACE COMPOSITION

      Thin solid films
    23. KIZILCAN N; AKAR A
      CHAIN-EXTENDED CYCLOHEXANONE-FORMALDEHYDE AND ACETOPHENONE-FORMALDEHYDE RESINS

      Journal of applied polymer science
    24. BYUN JS; LEE BH; PARK JS; SOHN DK; CHOI SJ; KIM JJ
      FORMATION OF HIGH-CONDUCTIVITY WSIX LAYER AND ITS CHARACTERIZATION ASA GATE ELECTRODE

      Journal of the Electrochemical Society
    25. ZAMBOV L; POPOV C; IVANOV B
      DESIGN OF INJECTION FEED MULTIWAFER LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITION REACTORS

      Journal of the Electrochemical Society
    26. WANG MT; LIN YC; LEE JY; WANG CC; CHEN MC
      THIN-FILM PROPERTIES AND BARRIER EFFECTIVENESS OF CHEMICALLY VAPOR-DEPOSITED AMORPHOUS WSIX FILM

      Journal of the Electrochemical Society
    27. CELIK SM; OZTURK MC
      LOW THERMAL BUDGET IN-SITU SURFACE CLEANING FOR SELECTIVE SILICON EPITAXY

      Journal of the Electrochemical Society
    28. COLLINS RW; FUJIWARA H
      GROWTH OF HYDROGENATED AMORPHOUS-SILICON AND ITS ALLOYS

      Current opinion in solid state & materials science
    29. FEHRENBACHER M; RAUSCHER H; BEHM RJ
      DISSOCIATIVE ADSORPTION OF SIH2CL2 ON SI(111)7X7

      Zeitschrift für physikalische Chemie
    30. ITOH H; KAMEYAMA A; NISHIKUBO T
      SYNTHESIS OF SILICON-CONTAINING VINYL ETHER MONOMERS AND OLIGOMERS AND THEIR PHOTOINITIATED POLYMERIZATION

      Journal of polymer science. Part A, Polymer chemistry
    31. TEWS R; SUCHANECK G; KOTTWITZ A
      A MODEL FOR HIGH-RATE FILM DEPOSITION FROM DUSTY RF DISCHARGES

      Surface & coatings technology
    32. SUGAHARA S; MATSUMURA M
      MODELING OF GERMANIUM ATOMIC-LAYER-EPITAXY

      Applied surface science
    33. GUIRGIS GA; SHEN ZN; DURIG JR; QTAITAT MA; DREW AS; JIN YP
      SPECTRA AND STRUCTURE OF SILICON-CONTAINING COMPOUNDS OF THE GENERAL FORMULA CH2CHSI(CH3)(N)CL3-N

      Journal of molecular structure
    34. WEN RM; LIANG JW; ZHOU SJ; ZHAU ZH
      MEASUREMENT OF TRACE PHOSPHORUS IN DICHLOROSILANE BY HIGH-TEMPERATUREHYDROGEN REDUCTION GAS-CHROMATOGRAPHY

      Journal of chromatography
    35. SUTER HU; MARIC DM; MEIER PF
      AN AB-INITIO STUDY OF THE MOLECULAR ELECTRIC-FIELD GRADIENTS OF THE CHLORSILANES

      Zeitschrift fur Naturforschung. A, A journal of physical sciences
    36. HOBBS CC; WORTMAN JJ; OZTURK MC
      DEGRADATION OF SILICON DIOXIDE DURING SELECTIVE SILICON EPITAXY IN A DICHLOROSILANE ENVIRONMENT

      Journal of electronic materials
    37. NAKASHIMA H; OMAE K; TAKEBAYASHI T; ISHIZUKA C; SAKURAI H; YAMAZAKI K; NAKAZA M; SHIBATA T; KUDO M; KOSHI S
      ACUTE AND SUBACUTE INHALATION TOXICITY OF DICHLOROSILANE IN MALE ICR MICE

      Archives of toxicology
    38. SUGAHARA S; HASUNUMA E; IMAI S; MATSUMURA M
      MODELING OF SILICON ATOMIC-LAYER-EPITAXY

      Applied surface science
    39. WANG CL; UNNIKRISHNAN S; KIM BY; KWONG DL; TASCH AF
      THE VIABILITY OF GEH4-BASED IN-SITU CLEAN FOR LOW-TEMPERATURE SILICONEPITAXIAL-GROWTH

      Journal of the Electrochemical Society
    40. OGATA T; SORITA T; KOBAYASHI K; MATSUI Y; HORIE K; HIRAYAMA M
      KINETIC-STUDY OF SILICON-NITRIDE GROWTH FROM DICHLOROSILANE AND AMMONIA

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    41. ZAMBOV LM
      OPTIMUM DESIGN OF LPCVD REACTORS

      Journal de physique. IV
    42. ZAMBOV LM
      OPTIMUM DESIGN OF LPCVD REACTORS

      Journal de physique. IV
    43. JANG SM; LIAO K; REIF R
      CHEMICAL-VAPOR-DEPOSITION OF EPITAXIAL SILICON-GERMANIUM FROM SILANE AND GERMANE .1. KINETICS

      Journal of the Electrochemical Society
    44. OSBORNE IS; HATA N; MATSUDA A
      PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION OF HYDROGENATED AMORPHOUS-SILICON FROM DICHLOROSILANE AND SILANE GAS-MIXTURES

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    45. OSBORNE IS; HATA N; MATSUDA A
      ANNEALING ENERGY-DISTRIBUTION OF LIGHT-INDUCED DEFECTS OF HYDROGENATED AMORPHOUS-SILICON FILMS GROWN FROM SILANE AND DICHLOROSILANE GAS-MIXTURES

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    46. YUN SJ; LEE SC; KIM BW; KANG SW
      STUDY OF INTERACTION BETWEEN INCIDENT SILICON AND GERMANIUM FLUXES AND SIO2 LAYER USING SOLID-SOURCE MOLECULAR-BEAM EPITAXY

      Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena
    47. SAKAMOTO H; TAKAKUWA Y; HORI T; HORIE T; MIYAMOTO N
      FIRST-ORDER ISOTHERMAL DESORPTION-KINETICS OF CHLORINE ON SIH2CL2-ADSORBED SI(100) SURFACE

      Applied surface science
    48. TAKAKUWA Y; MAZUMDER MK; MIYAMOTO N
      GROWTH DEFECT OBSERVATION WITH PYRAMIDAL HILLOCK AND REDUCTION BY PHOTOEXCITED HYDROGEN IN SI CVD WITH SIH2CL2

      Journal of the Electrochemical Society
    49. FITCH JT
      SELECTIVITY MECHANISMS IN LOW-PRESSURE SELECTIVE EPITAXIAL SILICON GROWTH

      Journal of the Electrochemical Society
    50. SORITA T; SATAKE T; ADACHI H; OGATA T; KOBAYASHI K
      MASS-SPECTROMETRIC AND KINETIC-STUDY OF LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITION OF SI3N4 THIN-FILMS FROM SIH2CL2 AND NH3

      Journal of the Electrochemical Society
    51. NISHIKUBO T; KAMEYAMA A; HAYASHI N
      A NOVEL SYNTHESIS OF POLY(SILYL ETHER)S BY ADDITION-REACTIONS OF DIEPOXIDE WITH DICHLOROSILANE COMPOUNDS

      Polymer Journal


ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 31/10/20 alle ore 15:30:00