Catalogo Articoli (Spogli Riviste)

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La ricerca find articoli where soggetti phrase all words 'device characterization' sort by level,fasc_key/DESCEND, pagina_ini_num/ASCEND ha restituito 39 riferimenti
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    1. Ferrari, G; Sampietro, M
      Material and device characterization using a correlation spectrum analyzer

      MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
    2. Katoh, N; Deguchi, T; Berns, RS
      An accurate characterization of CRT monitor (I) verifications of past studies and clarifications of gamma

      OPTICAL REVIEW
    3. Katoh, N; Deguchi, T; Berns, RS
      An accurate characterization of CRT monitor (II) proposal for an extensionto CIE method and its verification

      OPTICAL REVIEW
    4. Filanovsky, IM; Allam, A
      Mutual compensation of mobility and threshold voltage temperature effects with applications in CMOS circuits

      IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-FUNDAMENTAL THEORY AND APPLICATIONS
    5. Filanovsky, IM; Allam, A; Lim, ST
      Temperature dependence of output voltage generated by interaction of threshold voltage and mobility of an NMOS transistor

      ANALOG INTEGRATED CIRCUITS AND SIGNAL PROCESSING
    6. Wartenberg, SA; Grajek, P
      De-embedding PCB fixtures for package characterization

      MICROWAVE AND OPTICAL TECHNOLOGY LETTERS
    7. Hong, GW; Luo, MR; Rhodes, PA
      A study of digital camera colorimetric characterization based on polynomial modeling

      COLOR RESEARCH AND APPLICATION
    8. Ashkenasy, N; Leibovitch, M; Rosenwaks, Y; Shapira, Y
      Characterization of quantum well structures using surface photovoltage spectroscopy

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    9. Pilevar, S; MacDougall, TW; Davis, CC
      Effects of grating period and mode order on the growth and sensitivity of the resonant peaks of long period gratings

      IEICE TRANSACTIONS ON ELECTRONICS
    10. Lyra, ROC; Cardoso, BJ; John, V; Lipo, TA
      Coaxial current transformer for test and characterization of high-power semiconductor devices under hard and soft switching

      IEEE TRANSACTIONS ON INDUSTRY APPLICATIONS
    11. Chan, DSH; Chim, WK; Phang, JCH; Liu, YY; Ng, TH; Xiao, H
      Can physical analysis aid in device characterization?

      JOURNAL OF CRYSTAL GROWTH
    12. Madonna, G; Ferrero, A; Pirola, M; Pisani, U
      Testing microwave devices under different source impedance values - A novel technique for on-line measurement of source and device reflection coefficients

      IEEE TRANSACTIONS ON INSTRUMENTATION AND MEASUREMENT
    13. Filanovsky, IM
      Input-free V-TP and -V-TN extractor circuits realized on the same chip

      ANALOG INTEGRATED CIRCUITS AND SIGNAL PROCESSING
    14. Majumdar, A
      Scanning thermal microscopy

      ANNUAL REVIEW OF MATERIALS SCIENCE
    15. Wartenberg, SA; Westgate, CR
      Modeling the temperature-dependent early voltage of a silicon germanium heterojunction bipolar transistor

      IEEE TRANSACTIONS ON ELECTRON DEVICES
    16. Shen, H; Xu, Z; Dalager, B; Kristiansen, V; Strom, O; Shur, MS; Fjeldly, TA; Lu, JQ; Ytterdal, T
      Conducting laboratory experiments over the Internet

      IEEE TRANSACTIONS ON EDUCATION
    17. Tsai, JL; Perng, DB
      An intuitive and device-independent method of generating color atlases forelectronic displays

      VISUAL COMPUTER
    18. SOU IK; MAN CL; MA ZH; YANG Z; WONG GKL
      ZNSTE-BASED VISIBLE-BLIND UV PHOTOVOLTAIC DETECTORS

      Journal of crystal growth
    19. HUANG R; ZHANG X; WANG YY
      A HIGH-PERFORMANCE SOI DRIVE-IN GATE CONTROLLED HYBRID TRANSISTOR (DGCHT)

      I.E.E.E. transactions on electron devices
    20. VANDERWATER DA; KISH FA; PEANSKY MJ; ROSNER SJ
      ELECTRICAL-CONDUCTION THROUGH COMPOUND SEMICONDUCTOR WAFER BONDED INTERFACES

      Journal of crystal growth
    21. BRUCE S; TRASSER A; BIRK M; RYDBERG A; SCHUMACHER H
      EXTRACTION OF THERMAL TIME CONSTANT IN HBTS USING SMALL-SIGNAL MEASUREMENTS

      Electronics Letters
    22. SHEALY JB; MISHRA UK
      0.2-MU-M GATE LENGTH, NONALLOYED P-ALINAS()N-ALINAS/GAINAS JHEMTS WITH F(T)=62GHZ/

      Electronics Letters
    23. RORSMAN N; KARLSSON C; HSU CC; WANG SM; ZIRATH H
      MICROWAVE PERFORMANCE OF A GA0.20IN0.80P GA0.47IN0.53AS/INP HFET GROWN WITH MOVPE/

      Electronics Letters
    24. FIKRY W; GHIBAUDO G; HADDARA H; CRISTOLOVEANU S; DUTOIT M
      METHOD FOR EXTRACTING DEEP-SUBMICROMETER MOSFET PARAMETERS

      Electronics Letters
    25. REYNOSOHERNANDEZ JA; ESCOTTE L; PLANA R; GRAFFEUIL J
      DEEP-LEVEL CHARACTERIZATION IN GAAS-FETS BY MEANS OF THE FREQUENCY DISPERSION OF THE OUTPUT IMPEDANCE

      Electronics Letters
    26. MARSO M; SCHIMPF K; FOX A; VANDERHART A; HARDTDEGEN H; HOLLFELDER M; KORDOS P; LUTH H
      NOVEL HEMT LAYOUT - THE ROUNDHEMT

      Electronics Letters
    27. ZHU Y; ISHIMARU Y; SHIMIZU M
      DIRECT DETERMINATION OF SOURCE, DRAIN AND CHANNEL RESISTANCES OF HEMTS

      Electronics Letters
    28. PARKER A; SCOTT J
      METHOD FOR DETERMINING CORRECT TIMING FOR PULSED-I V MEASUREMENT OF GAAS-FETS/

      Electronics Letters
    29. MANARESI N; FRANCHI E; GNUDI A; BACCARANI G
      MOSFET THRESHOLD EXTRACTION CIRCUIT

      Electronics Letters
    30. RORSMAN N; KARLSSON C; WANG SM; ZIRATH H; ANDERSSON TG
      DC AND RF PERFORMANCE OF 0.15-MU-M GATE LENGTH IN0.70AL0.30AS IN0.80GA0.20AS HFETS ON GAAS SUBSTRATE/

      Electronics Letters
    31. KLEPSER BUH; PATRICK W
      DETERMINATION OF DISPERSION OF OUTPUT CONDUCTANCE AND TRANSCONDUCTANCE OF INP HEMTS USING LOW-FREQUENCY S-PARAMETER MEASUREMENTS

      Electronics Letters
    32. ORTIZCONDE A; LIOU JJ; SANCHEZ MG; NUNEZ MG; ANDERSON RL
      SERIES RESISTANCE AND EFFECTIVE CHANNEL-LENGTH EXTRACTION OF N-CHANNEL MOSFET AT 77-K

      Electronics Letters
    33. SORGE R
      I(T)-TECHNIQUE FOR GENERATION RATE DETERMINATION IN IMPLANTED MOS STRUCTURES

      Electronics Letters
    34. GALUPMONTORO C; SCHNEIDER MC; KOERICH AL; PINTO RLO
      MOSFET THRESHOLD EXTRACTION FROM VOLTAGE-ONLY MEASUREMENTS

      Electronics Letters
    35. CHAN YJ; YEH TJ; KUO JM
      IN0.49GA0.15P IN0.15GA0.85AS HETEROSTRUCTURE PULSED DOPED-CHANNEL FETS/

      Electronics Letters
    36. KIM BS; NAM S; SEO KS
      ANALYTIC INTRINSIC MODEL-BASED PARASITIC EXTRACTION METHOD FOR HEMTS

      Electronics Letters
    37. ORTIZCONDE A; LIOU JJ; WONG W; SANCHEZ FJG
      SIMPLE METHOD FOR EXTRACTING THE DIFFERENCE BETWEEN THE DRAIN AND SOURCE SERIES RESISTANCES IN MOSFETS

      Electronics Letters
    38. BINARI SC; DIETRICH HB; KELNER G; ROWLAND LB; DOVERSPIKE K; GASKILL DK
      ELECTRICAL CHARACTERIZATION OF TI SCHOTTKY BARRIERS ON N-TYPE GAN

      Electronics Letters
    39. ADVE RS; SARKAR TK
      GENERATION OF ACCURATE BROAD-BAND INFORMATION FROM NARROW-BAND DATA USING THE CAUCHY METHOD

      Microwave and optical technology letters


ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 31/05/20 alle ore 10:34:44