Catalogo Articoli (Spogli Riviste)

HELP
ATTENZIONE: attualmente gli articoli Current Contents (fonte ISI) a partire dall'anno 2002 sono consultabili sulla Risorsa On-Line

Le informazioni sugli articoli di fonte ISI sono coperte da copyright

La ricerca find articoli where soggetti phrase all words 'defect density' sort by level,fasc_key/DESCEND, pagina_ini_num/ASCEND ha restituito 60 riferimenti
Selezionare un intervallo

Per ulteriori informazioni selezionare i riferimenti di interesse.

    1. Zhao, TX; Hao, Y; Jiao, YC
      VLSI yield optimization based on the redundancy at the sub-processing-element level

      IEICE TRANSACTIONS ON INFORMATION AND SYSTEMS
    2. Udayashankar, NK; Bhat, HL
      Growth and characterization of indium antimonide and gallium antimonide crystals

      BULLETIN OF MATERIALS SCIENCE
    3. Miyazaki, S; Narasaki, M; Ogasawara, M; Hirose, M
      Characterization of ultrathin zirconium oxide films on silicon using photoelectron spectroscopy

      MICROELECTRONIC ENGINEERING
    4. Jiraskova, Y; Schneeweiss, O; Van Hoecke, T; Segers, D; Dauwe, C
      Investigation of defects and stresses in SiFe steel surfaces

      JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS
    5. Tseng, WJ; Kita, H
      As-fired strength of sintered silicon nitride ceramics

      CERAMICS INTERNATIONAL
    6. Bouizem, Y; Belfedal, A; Sib, JD; Chahed, L
      Determination of absorption coefficients from the ratio between absorptance and transmittance measurements of weakly absorbing films

      OPTICS COMMUNICATIONS
    7. Yoon, JH
      Hindering the light-induced instability in a-Si : H by hydrogen clusters

      JOURNAL OF NON-CRYSTALLINE SOLIDS
    8. Fialips, CI; Petit, S; Decarreau, A; Beaufort, D
      Influence of synthesis pH on kaolinite "crystallinity" and surface properties

      CLAYS AND CLAY MINERALS
    9. Asada, K; Sakamoto, K; Watanabe, T; Sameshima, T; Higashi, S
      Heat treatment with high-pressure H2O vapor of pulsed laser crystallized silicon films

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    10. Onischuk, AA; Dzuba, SA; Samoilova, RI
      Pulsed EPR hole-burning experiment on dangling bond centers in a-Si : H aerosol particles formed by thermal decomposition of silane

      APPLIED MAGNETIC RESONANCE
    11. Hess, C; Weiland, LH
      Extraction of wafer-level defect density distributions to improve yield prediction

      IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING
    12. Cobb, SD; Szofran, FR; Jones, KS; Lehoczky, SL
      Microstructural development of directionally solidified Hg1-xZnxSe alloys

      JOURNAL OF ELECTRONIC MATERIALS
    13. Kissinger, G; Vanhellemont, J; Lambert, U; Graf, D; Richter, H
      Uniform precipitation of oxygen in large diameter wafers

      MICROELECTRONIC ENGINEERING
    14. Bouizem, Y; Sib, JD; Chahed, L; Thye, ML
      Comparative studies of the influence of hydrogen incorporation on the electronic properties of a-Ge : H films prepared by two different techniques

      CANADIAN JOURNAL OF PHYSICS
    15. Sakikawa, N; Tamao, M; Miyazaki, S; Hirose, M
      Structural inhomogeneity in hydrogenated amorphous silicon in relation to photoelectric properties and defect density

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    16. PICKARD CDO; DAVIS TJ; WANG WN; STEEDS JW
      MAPPING CRYSTALLINE QUALITY IN DIAMOND FILMS BY MICRO-RAMAN SPECTROSCOPY

      DIAMOND AND RELATED MATERIALS
    17. MAEDA K; KITAHARA E
      METAL-INDUCED GAP STATES MODEL OF NONIDEAL AU SI SCHOTTKY-BARRIER WITH LOW DEFECT DENSITY/

      Applied surface science
    18. VANECEK M; PORUBA A; REMES Z; BECK N; NESLADEK M
      OPTICAL-PROPERTIES OF MICROCRYSTALLINE MATERIALS

      Journal of non-crystalline solids
    19. CAPUTO D; DECESARE G; PALMA F; TUCCI M; MINARINI C; TERZINI E
      INTERACTION OF PHOSPHORUS AND BORON IN COMPENSATED AMORPHOUS-SILICON FILMS

      Journal of non-crystalline solids
    20. BOUSQUET V; TOURNIE E; FAURIE JP
      DEFECT DENSITY IN ZNSE PSEUDOMORPHIC LAYERS GROWN BY MOLECULAR-BEAM EPITAXY ON TO VARIOUS GAAS BUFFER LAYERS

      Journal of crystal growth
    21. MIWA S; KUO LH; KIMURA K; OHTAKE A; YASUDA T; JIN CG; YAO T
      ZNSE HETEROEPITAXY ON GAAS(001) AND GAAS(110)

      Journal of crystal growth
    22. Warr, LN; Nieto, F
      Crystallite thickness and defect density of phyllosilicates in low-temperature metamorphic pelites: A TEM and XRD study of clay-mineral crystallinity-index standards

      CANADIAN MINERALOGIST
    23. MURANAKA M; MAKABE K; MIURA M; KATO H; IDE S; IWAI H; KAWAMURA M; TADAKI Y; ISHIHARA M; KAERIYAMA T
      THE ANALYSIS OF THE DEFECTIVE CELLS INDUCED BY COP IN A 0.3-MICRON-TECHNOLOGY NODE DRAM

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    24. MAEHASHI K; NAKASHIMA H; BERTRAM F; VEIT P; CHRISTEN J
      MOLECULAR-BEAM EPITAXIAL-GROWTH AND CHARACTERIZATION OF GAAS FILMS ONTHIN SI SUBSTRATES

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    25. WARLICK EL; HO E; PETRICH GS; KOLODZIEJSKI LA
      REDUCING THE DEFECT DENSITY IN MBE-ZNSE III-V HETEROSTRUCTURES/

      Journal of crystal growth
    26. SHIMA M; TERAKAWA A; ISOMURA M; TSUDA S
      EFFECT OF COMPOSITION ON THE PROPERTIES OF AMORPHOUS-SILICON CARBIDE AT A CERTAIN OPTICAL GAP

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    27. CONDE JP; SCHOTTEN V; AREKAT S; BROGUEIRA P; SOUSA R; CHU V
      AMORPHOUS AND MICROCRYSTALLINE SILICON DEPOSITED BY LOW-POWER ELECTRON-CYCLOTRON-RESONANCE PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    28. CONDE JP; SILVA M; CHU V; GLESKOVA H; VASANTH K; WAGNER S; SHEN DS
      INPLANE PHOTOCONDUCTIVITY IN AMORPHOUS-SILICON DOPING MULTILAYERS

      Philosophical magazine. B. Physics of condensed matter. Statistical mechanics, electronic, optical and magnetic
    29. CHUAH GK; JAENICKE S; CHEONG SA; CHAN KS
      THE INFLUENCE OF PREPARATION CONDITIONS ON THE SURFACE-AREA OF ZIRCONIA

      Applied catalysis. A, General
    30. HANSEN CK; THYREGOD P
      MODELING AND ESTIMATION OF WAFER YIELDS AND DEFECT DENSITIES FROM MICROELECTRONICS TEST STRUCTURE DATA

      Quality and reliability engineering international
    31. KRISHNAMURTHY S; CHEN AB; SHER A
      COMPARISON OF HGTE MATERIALS GROWN IN (100), (110), (111), AND (211) ORIENTATIONS

      Journal of electronic materials
    32. ILIE A; EQUER B; POCHET T
      LEAKAGE CURRENT STUDIES OF THICK A-SI-H DETECTORS UNDER HIGH-ELECTRIC-FIELD CONDITIONS

      Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment
    33. LENSKI M; COMES FJ
      SUBSTRATE-TEMPERATURE DEPENDENT PHOTOELECTRICAL AND STRUCTURAL-PROPERTIES OF A-SI-H DEPOSITED BY HYDROGEN-ASSISTED CHEMICAL-VAPOR-DEPOSITION

      Thin solid films
    34. DANESH P; TONEVA A; SAVATINOVA I; LIAROKAPIS E
      CORRELATIONS BETWEEN STRUCTURAL AND OPTOELECTRONIC PROPERTIES OF A-SI-H GROWN BY HOMOGENEOUS CHEMICAL-VAPOR-DEPOSITION

      Journal of non-crystalline solids
    35. POCHET T; ILIE A; BRAMBILLA A; EQUER B
      SENSITIVITY MEASUREMENTS OF THICK AMORPHOUS-SILICON P-I-N NUCLEAR-DETECTORS

      IEEE transactions on nuclear science
    36. KRSKA JHY; YOON JU; NEE JT; ROITMAN P; CAMPISI GJ; BROWN GA; CHUNG JE
      A MODEL FOR SIMOX BURIED-OXIDE HIGH-FIELD CONDUCTION

      I.E.E.E. transactions on electron devices
    37. KAMEI T; HATA N; MATSUDA A; UCHIYAMA T; AMANO S; TSUKAMOTO K; YOSHIOKA Y; HIRAO T
      DEPOSITION AND EXTENSIVE LIGHT SOAKING OF HIGHLY PURE HYDROGENATED AMORPHOUS-SILICON

      Applied physics letters
    38. FOSNIGHT W; JENSEN DL; MARTIN R
      ASSESSING REQUIREMENTS FOR WAFER ENVIRONMENT CONTROL

      Journal of the IES
    39. STIEBIG H; SIEBKE F
      IMPROVED ANALYSIS OF THE CONSTANT PHOTOCURRENT METHOD

      Philosophical magazine. B. Physics of condensed matter. Structural, electronic, optical and magnetic properties
    40. PECK DS
      GATE OXIDE EVALUATIONS FROM HIGH-E TESTS

      Quality and reliability engineering international
    41. MIRESHGHI A; LEE HK; HONG WS; DREWERY JS; JING T; KAPLAN SN; PEREZMENDEZ V
      IMPROVEMENT OF ELECTRONIC TRANSPORT CHARACTERISTICS OF AMORPHOUS-SILICON BY HYDROGEN DILUTION OF SILANE

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    42. CHOI DH; IMAI S; MATSUMURA M
      ELECTRICAL-PROPERTIES OF ULTRALARGE GRAIN POLYCRYSTALLINE SILICON FILM PRODUCED BY EXCIMER-LASER RECRYSTALLIZATION METHOD

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    43. GANGULY G; SAKATA I; OKUSHI H; MATSUDA A
      ABSENCE OF CORRELATION BETWEEN DISORDER AND DEFECT DENSITY IN HYDROGENATED AMORPHOUS-SILICON

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    44. GOLIKOVA OA
      FERMI-LEVEL SHIFTS AND ELECTRICAL-TRANSPORT PARAMETERS IN AMORPHOUS HYDROGENATED SILICON

      Semiconductors
    45. GANGULY G; MATSUDA A
      GROWTH-PROCESS OF A-SI-H

      Optoelectronics
    46. CABARROCAS PRI; LLORET A
      OPTICAL AND ELECTRONIC-PROPERTIES OF HYDROGENATED AMORPHOUS-SILICON FILMS DEPOSITED BY SQUARE-WAVE MODULATED RF DISCHARGES OF SILANE-HE MIXTURES

      Applied physics. A, Solids and surfaces
    47. GREIM O; WEBER J; BAER Y; KROLL U
      HYDROGEN DIFFUSION IN A-SI-H STIMULATED BY INTENSE ILLUMINATION

      Physical review. B, Condensed matter
    48. GREIM O; WEBER J; BAER Y; KROLL U
      HYDROGEN DIFFUSION IN A-SI-H STIMULATED BY INTENSE ILLUMINATION

      Physical review. B, Condensed matter
    49. VIGNOLI S; MEAUDRE R; MEAUDRE M
      EQUILIBRIUM TEMPERATURE IN INTRINSIC HYDROGENATED AMORPHOUS-SILICON UNDER ILLUMINATION

      Physical review. B, Condensed matter
    50. POCHET T; ILIE A; FOULON F; EQUER B
      CHARACTERIZATION OF A NEW A-SI H DETECTORS FABRICATED FROM AMORPHOUS-SILICON DEPOSITED AT HIGH-RATE BY HELIUM ENHANCED PECVD

      IEEE transactions on nuclear science
    51. CABARROCAS PRI
      DEPOSITION OF INTRINSIC, PHOSPHORUS-DOPED, AND BORON-DOPED HYDROGENATED AMORPHOUS-SILICON FILMS AT 50-DEGREES-C

      Applied physics letters
    52. KIRIMURA H; MAEDA H; MURAKAMI H; NAKAHIGASHI T; OHTANI S; TABATA T; HAYASHI T; KOBAYASHI M; MITSUDA Y; NAKAMURA N; KUWAHARA H; DOI A
      STUDY OF DEPOSITION PROCESS IN MODULATED RF SILANE PLASMA

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    53. SOGA T; JIMBO T; UMENO M
      MINORITY-CARRIER PROPERTIES OF GAAS ON SI GROWN BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    54. DRESCHER D; SCHMAL J; BINDEMANN R; KOTTWITZ A; ALBERT M; MONCH JP
      PHOTOELECTRICAL PROPERTIES OF A-SIH IN DEPENDENCE ON GROWTH-CONDITIONS AND DEGRADATION

      Physica status solidi. a, Applied research
    55. DRUSEDAU T; MULLER B; SCHOLZ A; SCHRODER B
      KEY PARAMETERS FOR FURTHER REDUCTION OF GAP STATES IN A-GE-H AND ITS IMPROVED STABILITY UNDER KEV-ELECTRON IRRADIATION

      Journal of non-crystalline solids
    56. NAKATA M; WAGNER S; PETERSON TM
      DO IMPURITIES AFFECT THE OPTOELECTRONIC PROPERTIES OF A-SI-H

      Journal of non-crystalline solids
    57. BELDI N; SIB J; CHAHED L; SMAIL T; MOHAMMEDBRAHIM T; DJEBBOUR Z; KLEIDER JP; LONGEAUD C; MENCARAGLIA D
      OPTIMIZATION OF THE HYDROGEN CONTENT IN A-SI-H DEPOSITED AT HIGH-RATEBY DE MAGNETRON SPUTTERING

      Journal of non-crystalline solids
    58. KOCH F; PETROVAKOCH V; MUSCHIK T
      THE LUMINESCENCE OF POROUS SI - THE CASE FOR THE SURFACE-STATE MECHANISM

      Journal of luminescence
    59. MASUDA A; FUKUSHI I; YONEZAWA Y; MINAMIKAWA T; MORIMOTO A; KUMEDA M; SHIMIZU T
      SPECTROSCOPIC STUDY ON N2O-PLASMA OXIDATION OF HYDROGENATED AMORPHOUS-SILICON AND BEHAVIOR OF NITROGEN

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    60. ISOMURA M; TAKAHAMA T; TSUDA S; NAKANO S
      DEPENDENCE OF OPEN-CIRCUIT VOLTAGE OF AMORPHOUS-SILICON SOLAR-CELLS ON THICKNESS AND DOPING LEVEL OF THE P-LAYER

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS


ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 30/10/20 alle ore 15:20:35