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La ricerca find articoli where soggetti phrase all words 'buffer layer' sort by level,fasc_key/DESCEND, pagina_ini_num/ASCEND ha restituito 735 riferimenti
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    1. Brown, P; Khan, T; Stampe, P; Kennedy, R; Sayed, S; Vlasov, YA; Larkins, GL
      Sputtering of YSZ buffer layers on (100)Si for use in YBa2Cu3O7 based microwave circuits

      PHYSICA C
    2. Yuan, HR; Lu, DC; Liu, XL; Chen, Z; Han, P; Wang, XH; Wang, D
      Statistical investigation on morphology development of gallium nitride in initial growth stage

      JOURNAL OF CRYSTAL GROWTH
    3. Yuan, HR; Chen, Z; Lu, DC; Liu, XL; Han, PD; Wang, XH
      A geometrical model of GaN morphology in initial growth stage

      JOURNAL OF CRYSTAL GROWTH
    4. Teraji, T; Wang, CL; Endo, S; Ito, T
      Improvement in fabrication processes for electronic devices of homoepitaxial diamond films

      NEW DIAMOND AND FRONTIER CARBON TECHNOLOGY
    5. Haneder, TP; Honlein, W; Bachhofer, H; Von Philipsborn, H; Waser, R
      Optimization of Pt/SBT/CeO2/Si(100) gate stacks for low voltage ferroelectric field effect devices

      INTEGRATED FERROELECTRICS
    6. Han, JP; GUo, X; Broadbridge, CC; Ma, TP; Ils, A; Cantoni, M; Sallese, JM; Fazan, P
      Buffer layer dependence of memory effects for SrBi2Ta2O9 on Si

      INTEGRATED FERROELECTRICS
    7. Liu, XH; Yin, J; Liu, ZG; Wang, L; Li, J; Zhu, XH; Chen, KJ
      Properties of PbZr(x)(T)i(1-x)O(3)/CeO2/SiO2/Si structure

      INTEGRATED FERROELECTRICS
    8. Kalkur, TS; Lindsey, J
      Electrical characteristics of Pt-SBT-Polysilicon (MFIP) capacitors with yttrium oxide as the buffer layer

      INTEGRATED FERROELECTRICS
    9. Yang, F; Wu, K; Larkins, G
      The characterization of thermal cycling behavior of YBa2Cu3O7 on Y-stabilized ZrO2 buffered (100) Si

      IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY
    10. Gao, J; Tang, WH; Yau, CY
      Growth and characterization of Eu-Cu-O thin films on YSZ(100) substrates

      IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY
    11. Araki, T; Takahashi, Y; Yamagiwa, K; Yuasa, T; Iijima, Y; Takeda, K; Kim, SB; Yamada, Y; Hirabayashi, I
      Fabrication of YBa2Cu3O7-x films on buffered metal tapes fired at low temperature by MOD method using trifluoroacetate salts

      IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY
    12. Sin, A; Supardi, Z; Sulpice, A; Odier, P; Weiss, F; Ortega, L; Nunez-Regueiro, M
      Synthesis by aerosol process of superconductor films and buffer layer materials.

      IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY
    13. Okuyucu, H; Celik, E; Ramazanoglu, MK; Akin, Y; Mutlu, IH; Sigmund, W; Crow, JE; Hascicek, YS
      Textured buffer layers for YBCO coated conductors by continuous sol-gel processing

      IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY
    14. Jimenez, C; Weiss, F; Senateur, JP; Abrutis, A; Krellmann, M; Selbmann, D; Eickemeyer, J; Stadel, O; Wahl, G
      YBaCuO deposition by MOCVD on metallic substrates: a comparative study on buffer layers

      IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY
    15. Izumi, T; Hobara, N; Kakimoto, K; Izumi, T; Hasegawa, K; Kai, M; Honjo, T; Yao, X; Fuji, H; Nakamura, Y; Shiohara, Y
      Coated conductor of RE-Ba-Cu-O thick film on metal tape fabricated by liquid phase epitaxy process

      IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY
    16. Kim, SB; Maeda, T; Yamada, Y; Suga, T; Matsumoto, K; Watanabe, T; Hirabayashi, I
      Fabrication of NdGaO3 buffer layer on textured Ni tape for long length coated conductors

      IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY
    17. Yang, WI; Lee, JH; Jang, JM; Ryu, JS; Hur, J; Lee, SY
      Microwave and structural properties of YBa2Cu3O7-delta films on R-cut sapphire buffered with post-annealed CeO2 layer

      IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY
    18. Izumi, T; Yao, X; Hobara, N; Kakimoto, K; Haegawa, K; Nakamura, Y; Izumi, T; Shiohara, Y
      LPE growth of RE123 crystals from NiO saturated solution

      IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY
    19. Amano, H; Akasaki, I
      Novel aspects of the growth of nitrides by MOVPE

      JOURNAL OF PHYSICS-CONDENSED MATTER
    20. Cheng, SD; Han, XQ; Kam, CH; Zhou, Y; Lam, YL; Oh, JT; Xu, XW
      c-axis-textured LiNbO3 thin films on Si (111) substrates

      APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
    21. Han, JH; Kim, HJ; Yang, MH; Yang, CW; Yoo, JB; Park, CY; Song, YH; Nam, KS
      Effects of thickness of Ni layer deposited on glass substrate on the growth and emission properties of carbon nanotubes

      MATERIALS SCIENCE & ENGINEERING C-BIOMIMETIC AND SUPRAMOLECULAR SYSTEMS
    22. Huang, CH; Li, SS; Shafarman, WN; Chang, CH; Lambers, ES; Rieth, L; Johnson, JW; Kim, S; Stanbery, BJ; Anderson, TJ; Holloway, PH
      Study of Cd-free buffer layers using In-x(OH,S)(y) on CIGS solar cells

      SOLAR ENERGY MATERIALS AND SOLAR CELLS
    23. Bar, M; Muffler, HJ; Fischer, CH; Lux-Steiner, MC
      ILGAR technology IV: ILGAR thin film technology extended to metal oxides

      SOLAR ENERGY MATERIALS AND SOLAR CELLS
    24. Kawanami, H
      Heteroepitaxial technologies of III-V on Si

      SOLAR ENERGY MATERIALS AND SOLAR CELLS
    25. Chang, HL; Kuo, CT
      Characteristics of Si-C-N films deposited by microwave plasma CVD on Si wafers with various buffer layer materials

      DIAMOND AND RELATED MATERIALS
    26. Sun, YJ; Li, AZ; Qi, M; Zhang, LY; Yao, X
      High surface area anatase titania nanoparticles prepared by MOCVD

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    27. Yang, CC; Wu, MC; Chi, GC; Chuo, CC; Chyi, JI
      Improvement of diodes performance with a multiple-pair buffer layer by MOCVD

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    28. Sanchez, AM; Pacheco, FJ; Molina, SI; Stemmer, J; Aderhold, J; Graul, J
      Structural characterization of high temperature AlN intermediate layer in GaN grown by molecular beam epitaxy

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    29. Bar-Ilan, AH; Zamir, S; Katz, O; Meyler, B; Salzman, J
      GaN layer growth optimization for high power devices

      MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING
    30. Taki, K; Suzuki, T; Enomoto, Y; Suzuki, K
      The growth of YBa2Cu3O7-delta thin film on Pt buffer layer

      PHYSICA C
    31. Gao, J; Tang, WH; Yau, CY
      The early growth and interface of YBa2Cu3Oy thin films deposited on YSZ substrates

      PHYSICA C
    32. Yuasa, T; Kurosaki, H; Kim, S; Maeda, T; Higashiyama, K; Hirabayashi, I
      Fabrication of buffer layer for YBCO coated conductor on cube textured Ag substrate

      PHYSICA C
    33. Kurosaki, H; Yuasa, T; Maeda, T; Yamada, Y; Kim, SB; Watanabe, T; Wada, K; Hirabayashi, I
      Fabrication of buffer layers and seed layers on biaxially textured Ni tapes for YBCO superconducting wire

      PHYSICA C
    34. Ohmatsu, K; Muranaka, K; Hahakura, S; Taneda, T; Fujino, K; Takei, H; Sato, Y; Matsuo, K; Takahashi, Y
      Development of in-plane aligned YBCO tapes fabricated by inclined substrate deposition

      PHYSICA C
    35. Kim, S; Maeda, T; Yamada, Y; Suga, T; Yamada, Y; Watanabe, T; Matsumoto, K; Hirabayashi, I
      Fabrication of seed/buffer layers on metallic substrates for YBCO coated conductors

      PHYSICA C
    36. Miura, T; Yamada, Y; Suga, T; Huang, DX; Kim, S; Maeda, T; Hirabayashi, I; Ikuta, H; Mizutani, U
      Non-cuprate thin films as candidates of seed layer for liquid phase epitaxy process

      PHYSICA C
    37. Takahashi, Y; Araki, T; Yamagiwa, K; Yamada, Y; Kim, SB; Iijima, Y; Takeda, K; Hirabayashi, I
      Preparation of YBCO films on CeO2 buffered metallic substrates by the TFA-MOD method

      PHYSICA C
    38. Izumi, T; Hobara, N; Kakimoto, K; Izumi, T; Hasegawa, K; Kai, M; Honjo, T; Yao, X; Fuji, H; Nakamura, Y; Shiohara, Y
      Liquid phase epitaxy processed coated conductors on metal tapes

      PHYSICA C
    39. Izumi, T; Yao, X; Hobara, N; Hasegawa, K; Kai, M; Fuji, H; Krauns, C; Nakamura, Y; Izumi, T; Shiohara, Y
      Growth of RE123 films from NiO-saturated solution by liquid phase epitaxy

      PHYSICA C
    40. Krauns, C; Koyama, S; Izumi, T; Izumi, T; Nakamura, Y; Shiohara, Y
      Initial stage in the liquid phase epitaxy of Nd123 of films: dependence ofgrowth rate on process parameter

      PHYSICA C
    41. Yao, X; Izumi, T; Hobara, N; Nakamura, Y; Izumi, T; Shiohara, Y
      REBCO superconductor on Ni-NdBCO buffered MgO substrate by liquid phase epitaxy process (RE = Nd, Sm, Y)

      PHYSICA C
    42. Tamura, K; Yoshida, Y; Sudoh, K; Kurosaki, H; Matsunami, N; Hirabayashi, I; Takai, Y
      Influence of the microstructure of the SrTiO3 buffer layer on the superconducting properties of YBa2Cu3O7-x films

      PHYSICA C
    43. Chromik, S; Jergel, M; Gazi, S; Strbik, V; Hanic, F; Falcony, C; Vasko, M; Benacka, S
      Influence of substrate and precursor film composition on morphology and superconducting transition of T1-2212 thin films characterized by microwaves

      PHYSICA C
    44. Kim, SM; Song, SC; Lee, SY
      Effect of CeO2, BaTiO3 and CeO2/BaTiO3 double buffer layers on the superconducting properties of Y1Ba2Cu3O7-x grown on metallic substrates by pulsed laser deposition

      PHYSICA C
    45. Lockman, Z; Qi, XD; Berenov, A; Nast, R; Goldacker, W; MacManus-Driscoll, J
      Study of thermal oxidation of NiO buffers on Ni-based tapes for superconductor substrates

      PHYSICA C
    46. Kim, SM; Lee, SY
      Role of CeO2 and BaTiO3 buffer layers on the crystallization and the electrical property of Y1Ba2Cu3O7-x thin film

      PHYSICA C
    47. Wakana, H; Michikami, O
      High-quality a-axis oriented EuBa2Cu3O7-delta films on sapphire substrates

      PHYSICA C
    48. Chiba, K; Makino, S; Mukaida, M; Kusunoki, M; Ohshima, S
      Critical thickness of BaSnO3 buffer layer for YBa2Cu3O7-delta thin films on MgO substrates

      PHYSICA C
    49. Mizutani, T; Yamamoto, M; Kishimoto, S; Maezawa, K
      Low-frequency noise characteristics of AlGaAs/InGaAs pseudomorphic HEMTs

      IEICE TRANSACTIONS ON ELECTRONICS
    50. Noguchi, Y; Satoh, R; Miyayama, M; Kudo, T
      New intergrowth Bi2WO6-Bi3TaTiO9 ferroelectrics

      JOURNAL OF THE CERAMIC SOCIETY OF JAPAN
    51. Kang, HC; Seo, SH; Noh, DY
      X-ray scattering study on the structural evolution of AlN/sapphire(0001) films during radiofrequency sputter growth

      JOURNAL OF MATERIALS RESEARCH
    52. Zukauskas, A; Shur, MS; Gaska, R
      Light-emitting diodes: Progress in solid-state lighting

      MRS BULLETIN
    53. Cho, HK; Lee, JY; Kim, KS; Yang, GM
      Growth of a GaN overlayer with low threading dislocation density using stacking faults

      JOURNAL OF THE KOREAN PHYSICAL SOCIETY
    54. Kim, TS; Youn, CJ; Jeong, TS
      Splitting of the valence band for polycrystalline ZnO

      JOURNAL OF THE KOREAN PHYSICAL SOCIETY
    55. Yuan, HR; Lu, DC; Liu, XL; Chen, Z; Wang, XH; Wang, D; Han, PD
      Indium doping effect on GaN in the initial growth stage

      JOURNAL OF ELECTRONIC MATERIALS
    56. Ogata, K; Maejima, K; Fujita, S; Fujita, S
      ZnO growth toward optical devices by MOVPE using N2O

      JOURNAL OF ELECTRONIC MATERIALS
    57. Sanchez, AM; Pacheco, FJ; Molina, SI; Stemmer, J; Aderhold, J; Graul, J
      Critical thickness of high-temperature AlN interlayers in GaN on sapphire (0001)

      JOURNAL OF ELECTRONIC MATERIALS
    58. Luo, C; Clarke, DR; Dryden, JR
      The temperature dependence of the thermal conductivity of single crystal GaN films

      JOURNAL OF ELECTRONIC MATERIALS
    59. Shim, IB; Kim, CS; Park, KT; Oh, YJ
      Role of intermediate layer for La2/3Sr1/3MnO3/SiO2/Si(100) granular thin films

      JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS
    60. Li, T; Shen, HL; Shen, QW; Zou, SC; Tsukamoto, K; Okutomi, M
      Effects of Ni buffer layer on giant magnetoresistance in Co/Cu/Co sandwich

      JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS
    61. Sugii, N; Yamaguchi, S; Nakagawa, K
      Elimination of parasitic channels in strained-Si p-channel metal-oxide-semiconductor field-effect transistors

      SEMICONDUCTOR SCIENCE AND TECHNOLOGY
    62. Liu, CH; Chen, YL; Lin, BX; Zhu, JJ; Fu, ZX; Peng, C; Yang, Z
      Electrical properties of the ZnO/Si heterostructure

      CHINESE PHYSICS LETTERS
    63. Pan, CY; Tsai, DS; Hong, LS
      Abnormal growth of lead titanate thin film in chemical vapor deposition ofPb(C2H5)(4)/Ti(OPri)(4)/O-2

      MATERIALS CHEMISTRY AND PHYSICS
    64. Seong, S; Hwang, JS
      Molecular orbital calculations for the formation of GaN layers on ultra-thin AlN/6H-SiC surface using alternating pulsative supply of gaseous trimethyl gallium (TMG) and NH3

      BULLETIN OF THE KOREAN CHEMICAL SOCIETY
    65. Yu, Y; Wang, XP; Cao, YZ; Hu, XF
      Study on the structure and properties of ZrO2 buffer layers on stainless steel by XRD, IR and AES

      APPLIED SURFACE SCIENCE
    66. Hollander, B; Lenk, S; Mantl, S; Trinkaus, H; Kirch, D; Luysberg, M; Hackbarth, T; Herzog, HJ; Fichtner, PFP
      Strain relaxation of pseudomorphic Si1-xGex/Si(100) heterostructures afterhydrogen or helium ion implantation for virtual substrate fabrication

      NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
    67. Cheung, SH; Zheng, LX; Xie, MH; Tong, SY; Ohtani, N
      Initial stage of GaN growth and its implication to defect formation in films - art. no. 033304

      PHYSICAL REVIEW B
    68. Yamaguchi, S; Kariya, M; Kashima, T; Nitta, S; Kosaki, M; Yukawa, Y; Amano, H; Akasaki, I
      Control of strain in GaN using an In doping-induced hardening effect - art. no. 035318

      PHYSICAL REVIEW B
    69. Lei, SB; Wang, C; Yin, SX; Xu, QM; Bai, CL
      Two-dimensional crystallization of nitrobenzene on a monolayer of stearic acid characterized by scanning tunnelling microscopy

      SURFACE AND INTERFACE ANALYSIS
    70. Xiong, GC; Sun, Y; Guo, JD; Lian, GJ; Xu, XL
      Growth of HgBa(2)CaCu(2)Ox thin films using seed-buffer layers of YBa2Cu3Oy

      THIN SOLID FILMS
    71. Choi, HS; Kim, EH; Choi, IH; Kim, YT; Choi, JH; Lee, JY
      The effect of ZrO2 buffer layer on electrical properties in Pt/SrBi2Ta2O9/ZrO2/Si ferroelectric gate oxide structure

      THIN SOLID FILMS
    72. Horita, S; Horii, S; Nakajima, H; Umemoto, S
      Crystalline and ferroelectrical properties of heteroepitaxial (100) and (111) Pb(ZrxTi1-x)O-3 films on Ir/(100)(ZrO2)(1-x)(Y2O3)(x)/(100)Si structures

      THIN SOLID FILMS
    73. Yousfi, EB; Weinberger, B; Donsanti, F; Cowache, P; Lincot, D
      Atomic layer deposition of zinc oxide and indium sulfide layers for Cu(In,Ga)Se-2 thin-film solar cells

      THIN SOLID FILMS
    74. Hariskos, D; Powalla, M; Chevaldonnet, N; Lincot, D; Schindler, A; Dimmler, B
      Chemical bath deposition of CdS buffer layer: prospects of increasing materials yield and reducing waste

      THIN SOLID FILMS
    75. Moon, BK; Ishiwara, H; Tokumitsu, E; Yoshimoto, M
      Characteristics of ferroelectric Pb(Zr,Ti)O-3 films epitaxially grown on CeO2(111)/Si(111) substrates

      THIN SOLID FILMS
    76. Liaw, HM; Venugopal, R; Wan, J; Melloch, MR
      Epitaxial GaN films grown on Si(111) with varied buffer layers

      SOLID-STATE ELECTRONICS
    77. Yu, J; Wang, H; Dong, XM; Zhou, WL; Wang, YB; Zheng, YK; Zhao, JH
      Fabrication and characteristics of Au/PZT/BIT/p-Si ferroelectric memory diode

      SOLID-STATE ELECTRONICS
    78. Khanna, VK; Kumar, A; Sood, SC; Gupta, RP; Jasuja, KL; Maj, B; Kostka, A
      Investigation of degeneracy of current-voltage characteristics of asymmetrical IGBT with n-buffer layer concentration

      SOLID-STATE ELECTRONICS
    79. Paskova, T; Paskov, PP; Darakchieva, V; Tungasmita, S; Birch, J; Monemar, B
      Defect reduction in HVPE growth of GaN and related optical spectra

      PHYSICA STATUS SOLIDI A-APPLIED RESEARCH
    80. Heinke, H; Kirchner, V; Selke, H; Chierchia, R; Ebel, R; Einfeldt, S; Hommel, D
      X-ray scattering from GaN epitaxial layers - an example of highly anisotropic coherence

      JOURNAL OF PHYSICS D-APPLIED PHYSICS
    81. Saunderson, JD; Witcomb, MJ; Swanepoel, R
      Microstructure and morphology of alpha-Si : H solar cells grown on metallized flexible substrates

      JOURNAL OF MATERIALS SCIENCE
    82. Gu, SL; Zhang, R; Shi, Y; Zheng, YD; Zhang, L; Dwikusuma, F; Kuech, TF
      The impact of initial growth and substrate nitridation on thick GaN growthon sapphire by hydride vapor phase epitaxy

      JOURNAL OF CRYSTAL GROWTH
    83. Moustakas, TD; Iliopoulos, E; Sampath, AV; Ng, HM; Doppalapudi, D; Misra, M; Korakakis, D; Singh, R
      Growth and device applications of III-nitrides by MBE

      JOURNAL OF CRYSTAL GROWTH
    84. Juang, FS; Chu, TK
      Effect of diluted ammonia flow rate on undoped GaN epitaxial films grown by MOCVD

      JOURNAL OF CRYSTAL GROWTH
    85. Kamiyama, S; Iwaya, M; Hayashi, N; Takeuchi, T; Amano, H; Akasaki, I; Watanabe, S; Kaneko, Y; Yamada, N
      Low-temperature-deposited AlGaN interlayer for improvement of AlGaN/GaN heterostructure

      JOURNAL OF CRYSTAL GROWTH
    86. Cho, HK; Lee, JY; Choi, SC; Yang, GM
      Study on the growth of crack-free AlxGa1-xN (0.133 >= x > 0.1)/GaN heterostructure with low dislocation density

      JOURNAL OF CRYSTAL GROWTH
    87. Xu, HZ; Takahashi, K; Wang, CX; Wang, ZG; Okada, Y; Kawabe, M; Harrison, I; Foxon, CT
      Effect of in situ thermal treatment during growth on crystal quality of GaN epilayer grown on sapphire substrate by MOVPE

      JOURNAL OF CRYSTAL GROWTH
    88. Minemoto, T; Hashimoto, Y; Satoh, T; Negami, T; Takakura, H; Hamakawa, Y
      Cu(In,Ga)Se-2 solar cells with controlled conduction band offset of window/Cu(In,Ga)Se-2 layers

      JOURNAL OF APPLIED PHYSICS
    89. Yoon, SM; Ishiwara, H
      Memory operations of 1T2C-type ferroelectric memory cell with excellent data retention characteristics

      IEEE TRANSACTIONS ON ELECTRON DEVICES
    90. Qiu, CF; Chen, HY; Wong, M; Kwok, HS
      Dependence of the current and power efficiencies of organic light-emittingdiode on the thickness of the constituent organic layers

      IEEE TRANSACTIONS ON ELECTRON DEVICES
    91. Leung, BH; Fong, WK; Zhu, CF; Surya, C
      Study of low-frequency excess noise in GaN thin films deposited by RF-MBE on intermediate-temperature buffer layers

      IEEE TRANSACTIONS ON ELECTRON DEVICES
    92. Akasaka, T; Ando, S; Nishida, T; Saito, H; Kobayashi, N
      Selective area metalorganic vapor phase epitaxy of thick crack-free GaN films on trenched SiC substrates

      APPLIED PHYSICS LETTERS
    93. Han, PD; Wang, ZG; Duan, XF; Zhang, Z
      Polarity dependence of hexagonal GaN films on two opposite c faces of Al2O3 substrate

      APPLIED PHYSICS LETTERS
    94. Yi, MS; Noh, DY
      Strain relaxation of GaN nucleation layers during rapid thermal annealing

      APPLIED PHYSICS LETTERS
    95. Pecz, B; Makkai, Z; di Forte-Poisson, MA; Huet, F; Dunin-Borkowski, RE
      V-shaped defects connected to inversion domains in AlGaN layers

      APPLIED PHYSICS LETTERS
    96. Fujisawa, H; Kita, K; Shimizu, M; Niu, H
      Low-temperature fabrication of Ir/Pb(ZrTi)O-3/Ir capacitors solely by metalorganic chemical vapor deposition

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    97. Sakamaki, K; Migita, S; Xiong, SB; Ota, H; Sakai, S; Tarui, Y
      Fabrication and electrical characteristics of a trench-type metal-ferroelectric-metal-insulator-semiconductor field effect transistor

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    98. Manabe, T; Yamaguchi, I; Tsuchiya, T; Kondo, W; Mizuta, S; Kumagai, T
      Preparation of epitaxial YBa2Cu3O7-y/CeO2 multilayer films on yttria-stabilized zirconia (100) by all-coating-pyrolysis process

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    99. Zhang, Q; Ren, TL; Zhang, LT; Zhu, J; Li, ZJ
      Interface and surface characterization of lead zirconate titanate thin films grown by sol-gel method

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    100. Lei, SB; Xu, B; Wang, C; Xu, QM; Wan, LJ; Bai, CL
      Scanning tunneling microscopy characterization of aromatic molecules stabilized by a buffer layer of alkane derivatives

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS


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Documento generato il 10/08/20 alle ore 14:02:53