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La ricerca find articoli where soggetti phrase all words 'breakdown voltage' sort by level,fasc_key/DESCEND, pagina_ini_num/ASCEND ha restituito 176 riferimenti
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    1. Okuwada, K; Saito, M
      Ferroelectric SBT capacitor for 1-V operation

      ELECTRONICS AND COMMUNICATIONS IN JAPAN PART II-ELECTRONICS
    2. Shimizu, Y; Nakashima, N; Hyodo, T; Egashira, M
      NOx sensing properties of varistor-type gas sensors consisting of micro p-n junctions

      JOURNAL OF ELECTROCERAMICS
    3. Lorenz, A; Ott, J; Harrer, M; Preissner, EA; Whitehead, AH; Schreiber, M
      Modified citrate gel techniques to produce ZnO-based varistors (Part II - Electrical characterisation)

      JOURNAL OF ELECTROCERAMICS
    4. Hara, N; Nakasha, Y; Kikkawa, T; Joshin, K; Watanabe, Y; Tanaka, H; Takikawa, M
      InGaP-channel field transistors with high breakdown voltage

      IEICE TRANSACTIONS ON ELECTRONICS
    5. Karmalkar, S; Deng, JY; Shur, MS; Gaska, R
      RESURF AlGaN/GaN HEMT for high voltage power switching

      IEEE ELECTRON DEVICE LETTERS
    6. Ranjan, K; Bhardwaj, A; Namrata; Chatterji, S; Srivastava, AK; Shivpuri, RK
      Analysis and optimal design of Si microstrip detector with overhanging metal electrode

      SEMICONDUCTOR SCIENCE AND TECHNOLOGY
    7. Bhardwaj, A; Ranjan, K; Namrata; Chatterji, S; Srivastava, AK; Shivpuri, RK
      A new approach to the optimal design of multiple field-limiting ring structures

      SEMICONDUCTOR SCIENCE AND TECHNOLOGY
    8. Huang, BR; Ke, WC; Hsu, JF; Chen, WK
      Successive current-voltage measurements of a thick isolated diamond film

      MATERIALS CHEMISTRY AND PHYSICS
    9. Ravi, V; Date, SK
      Non-linear I-V characteristics of doped Sn1-xTixO2 (0(.)0 < x < 0(.)25) system

      BULLETIN OF MATERIALS SCIENCE
    10. Robinson, JA; Bergougnou, MA; Castle, GSP; Inculet, II
      The electric field at a water surface stressed by an AC voltage

      IEEE TRANSACTIONS ON INDUSTRY APPLICATIONS
    11. Johnson, JW; LaRoch, JR; Ren, F; Gila, BP; Overberg, ME; Abernathy, CR; Chyi, JI; Chou, CC; Nee, TE; Lee, CM; Lee, KP; Park, SS; Park, YJ; Pearton, SJ
      Schottky rectifiers fabricated on free-standing GaN substrates

      SOLID-STATE ELECTRONICS
    12. He, J; Zhang, X; Huang, R; Wang, YY
      Comments on "A closed form expression for punch-through limited breakdown voltage of parallel-plane junction"

      SOLID-STATE ELECTRONICS
    13. He, J; Zhang, X; Huang, R; Wang, YY
      Theoretical analysis of distributions of the peak field and breakdown voltage along the metallurgical junction edge based on an elliptic cylindrical solution

      SOLID-STATE ELECTRONICS
    14. Lin, KW; Yu, KH; Chang, WL; Cheng, CC; Lin, KP; Yen, CH; Lour, WS; Liu, WC
      Characteristics and comparison of In0.49Ga0.51P/InGaAs single and double delta-doped pseudomorphic

      SOLID-STATE ELECTRONICS
    15. He, J; Huang, R; Zhang, X; Wang, YY; Chen, XB
      Analytical model of three-dimensional effect on voltage and edge peak field distributions and optimal space for planar junction with a single field limiting ring

      SOLID-STATE ELECTRONICS
    16. He, J; Zhang, X
      A semi-theoretical relationship between the breakdown voltage of field plate edge and field plate design in planar P-N junction terminated with finite field plate

      MICROELECTRONICS JOURNAL
    17. He, J; Zhang, X
      Quasi-2-D analytical model for the surface field distribution and optimization of RESURF LDMOS transistor

      MICROELECTRONICS JOURNAL
    18. Strollo, AGM; Napoli, E
      Power superjunction devices: an analytic model for breakdown voltage

      MICROELECTRONICS JOURNAL
    19. Morancho, F; Cezac, N; Galadia, A; Zitouni, M; Rossel, P; Peyre-Lavigne, A
      A new generation of power lateral and vertical floating islands MOS structures

      MICROELECTRONICS JOURNAL
    20. Yin, H; He, W; Cross, AW; Phelps, ADR; Ronald, K
      Single-gap pseudospark discharge experiments

      JOURNAL OF APPLIED PHYSICS
    21. He, J; Zhang, X; Wang, YY
      A concise analytical approach for predicting the voltage and edge peak field profiles of the planar junction with a single floating field limiting ring

      INTERNATIONAL JOURNAL OF ELECTRONICS
    22. Strollo, AGM; Napoli, E
      Optimal ON-resistance versus breakdown voltage tradeoff in superjunction power devices: A novel analytical model

      IEEE TRANSACTIONS ON ELECTRON DEVICES
    23. Karmalkar, S; Mishra, UK
      Enhancement of breakdown voltage in AlGaN/GaN high electron mobility transistors using a field plate

      IEEE TRANSACTIONS ON ELECTRON DEVICES
    24. Liu, WC; Chang, WL; Lour, WS; Yu, KH; Lin, KW; Cheng, CC; Cheng, SY
      Temperature-dependence investigation of a high-performance inverted delta-doped V-shaped GaInP/InxGa1-xAs/GaAs pseudomorphic high electron mobility transistor

      IEEE TRANSACTIONS ON ELECTRON DEVICES
    25. Boudrissa, M; Delos, E; Gaquiere, C; Rousseau, M; Cordier, Y; Theron, D; De Jaeger, JC
      Enhancement-mode Al0.66In0.34As/Ga0.67In0.33As metamorphic HEMT: Modeling and measurements

      IEEE TRANSACTIONS ON ELECTRON DEVICES
    26. Rickelt, M; Rein, HM; Rose, E
      Influence of impact-ionization-induced instabilities on the maximum usableoutput voltage of Si-bipolar transistors

      IEEE TRANSACTIONS ON ELECTRON DEVICES
    27. Nguyen, C; Micovic, M
      The state-of-the-art of GaAs and InP power devices and amplifiers

      IEEE TRANSACTIONS ON ELECTRON DEVICES
    28. Ng, BK; David, JPR; Plimmer, SA; Rees, GJ; Tozer, RC; Hopkinson, M; Hill, G
      Avalanche multiplication characteristics of Al0.8Ga0.2As diodes

      IEEE TRANSACTIONS ON ELECTRON DEVICES
    29. Baliga, BJ
      The future of power semiconductor device technology

      PROCEEDINGS OF THE IEEE
    30. Zhang, AP; Johnson, JW; Luo, B; Ren, F; Pearton, SJ; Park, SS; Park, YJ; Chyi, JI
      Vertical and lateral GaN rectifiers on free-standing GaN substrates

      APPLIED PHYSICS LETTERS
    31. Huang, BR; Ke, WC; Chen, WK
      Electrical properties of the free-standing diamond film at high voltages

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    32. Uhm, HS; Choi, EH; Cho, GS
      Properties of the electrical-discharge plasma-density in a high pressure gas mixture

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    33. Luo, CM; Zhao, HL; Xie, ZF
      Experimental study of the pseudospark switches

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    34. Uhm, HS; Choi, EH; Cho, GS; Whang, KW
      Electrical breakdown voltage in a mixed gas

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    35. Kuroda, M
      Reliability improvement of Al-gate power GaAs-MESFET

      ELECTRONICS AND COMMUNICATIONS IN JAPAN PART II-ELECTRONICS
    36. Hyodo, T; Kanazawa, E; Takao, Y; Shimizu, Y; Egashira, M
      H-2 sensing properties and mechanism of Nb2O5-Bi2O3 varistor-type gas sensors

      ELECTROCHEMISTRY
    37. Kyuregyan, AS
      Fringing field of high-voltage planar p-i-n diodes with a nonuniformly doped guard ring

      SEMICONDUCTORS
    38. Pearton, SJ; Ren, F
      GaN electronics

      ADVANCED MATERIALS
    39. Hyodo, T; Baba, Y; Wada, K; Shimizu, Y; Egashira, M
      Hydrogen sensing properties of SnO2 varistors loaded with SiO2 by surface chemical modification with diethoxydimethylsilane

      SENSORS AND ACTUATORS B-CHEMICAL
    40. Yoon, SF; Gay, BP; Zheng, HQ; Kam, AHT
      Molecular beam epitaxial growth of high performance In0.48Ga0.52P/In0.20Ga0.80As/GaAs p-HEMTs using a valved phosphorus cracker cell

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    41. Yamaguchi, H; Akita, S; Himi, H; Kawamoto, K
      200 V rating CMOS transistor structure with intrinsic SOI substrate

      IEICE TRANSACTIONS ON ELECTRONICS
    42. Boudrissa, M; Delos, E; Cordier, Y; Theron, D; De Jaeger, JC
      Enhancement mode metamorphic Al0.67In0.33As/Ga0.66In0.34As HEMT on GaAs substrate with high breakdown voltage

      IEEE ELECTRON DEVICE LETTERS
    43. Liu, WC; Pan, HJ; Wang, WC; Thei, KB; Lin, KW; Yu, KH; Cheng, CC
      Temperature-dependent study of a lattice-matched InP/InGaAlAs heterojunction bipolar transistor

      IEEE ELECTRON DEVICE LETTERS
    44. Lin, KP; Yen, CH; Chang, WL; Yu, KH; Lin, KW; Liu, WC
      Study of a high-barrier-gate pseudomorphic transistor with a step-compositioned channel and bottomside delta-doped sheet structure

      SEMICONDUCTOR SCIENCE AND TECHNOLOGY
    45. Joo, MH; Park, KM; Choi, WY; Song, JH; Im, S
      Enhancing the breakdown voltages of Au/n-Si Schottky diodes by boron ion beam-induced edge termination

      NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
    46. Robinson, JA; Bergougnou, MA; Cairns, WL; Castle, GSP; Inculet, II
      Breakdown of air over a water surface stressed by a perpendicular alternating electric field, in the presence of a dielectric barrier

      IEEE TRANSACTIONS ON INDUSTRY APPLICATIONS
    47. De Souza, MM; Bose, JVSC; Narayanan, EMS; Pease, TJ; Ensell, G; Humphreys, J
      A novel area efficient floating field limiting ring edge termination technique

      SOLID-STATE ELECTRONICS
    48. Bae, DG; Chung, SK
      An analytical model for punch-through limited breakdown voltage of planar junction with multiple floating field limiting rings

      SOLID-STATE ELECTRONICS
    49. Cao, GJ; De Souza, MM; Narayanan, EMS
      Trade-off between the Kirk effect and the breakdown performance in resurfed lateral bipolar transistors for high voltage, high frequency applications

      SOLID-STATE ELECTRONICS
    50. Han, SY; Kim, HW; Chung, SK
      Surface field distribution and breakdown voltage of RESURF LDMOSFETs

      MICROELECTRONICS JOURNAL
    51. Hori, Y; Kuzuhara, M; Ando, Y; Mizuta, M
      Analysis of electric field distribution in GaAs metal-semiconductor field effect transistor with a field-modulating plate

      JOURNAL OF APPLIED PHYSICS
    52. Yoon, SF; Gay, BP; Zheng, HQ
      In0.48Ga0.52P/In0.20Ga0.80As/GaAs pseudomorphic high electron mobility transistors grown by solid-source molecular-beam epitaxy using a valved phosphorus cracker cell

      INTERNATIONAL JOURNAL OF ELECTRONICS
    53. Krupenin, S; Blanchard, RR; Somerville, MH; del Alamo, JA; Duh, KG; Chao, PC
      Physical mechanisms limiting the manufacturing uniformity of millimeter-wave power InPHEMT's

      IEEE TRANSACTIONS ON ELECTRON DEVICES
    54. Cao, XA; Pearton, SJ; Dang, GT; Zhang, AP; Ren, F; Van Hove, JM
      GaNN- and P-type Schottky diodes: Effect of dry etch damage

      IEEE TRANSACTIONS ON ELECTRON DEVICES
    55. Chen, XB; Wang, X; Sin, JKO
      A novel high-voltage sustaining structure with buried oppositely doped regions

      IEEE TRANSACTIONS ON ELECTRON DEVICES
    56. Chung, SK
      An analytical model for breakdown voltage of surface implanted SOI RESURF LDMOS

      IEEE TRANSACTIONS ON ELECTRON DEVICES
    57. Meneghesso, G; Grave, T; Manfredi, M; Pavesi, M; Canali, C; Zanoni, E
      Analysis of hot carrier transport in AlGaAs/InGaAs pseudomorphic HEMT's bymeans of electroluminescence

      IEEE TRANSACTIONS ON ELECTRON DEVICES
    58. Janas, T; Walinska, K; Chojnacki, T; Swiezewska, E; Janas, T
      Modulation of properties of phospholipid membranes by the long-chain polyprenol (C-160)

      CHEMISTRY AND PHYSICS OF LIPIDS
    59. Janas, T; Janas, T; Walinska, K
      The effect of hexadecaprenyl diphosphate on phospholipid membranes

      BIOCHIMICA ET BIOPHYSICA ACTA-BIOMEMBRANES
    60. Lebedev, AA
      Deep level centers in silicon carbide: A review

      SEMICONDUCTORS
    61. Lin, YH; Zhang, ZT; Tang, ZL; Yuan, FL; Li, JL
      Characterisation of ZnO-based varistors prepared from nanometre precursor powders

      ADVANCED MATERIALS FOR OPTICS AND ELECTRONICS
    62. Balev, OG; Vasilopoulos, P; Studart, N
      Edge helicons and repulsion of fundamental edge magnetoplasmons in the quantum Hall regime

      JOURNAL OF PHYSICS-CONDENSED MATTER
    63. Badila, M; Tudor, B; Brezeanu, G; Locatelli, ML; Chante, JP; Millan, J; Godignon, P; Lebedev, A; Banu, V
      Current-voltage characteristics of large area 6H-SiC pin diodes

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    64. Godey, S; Ntsoenzok, E; Schmidt, DC; Barbot, JF
      Effect of shallow donors induced by hydrogen on P+N junctions

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    65. Sakamoto, R; Nakata, K; Nakajima, S
      High-field electron transport in GaInP

      PHYSICA B
    66. Liu, WC; Chang, WL; Lour, WS; Cheng, SY; Shie, YH; Chen, JY; Wang, WC; Pan, SJ
      Temperature-dependent investigation of a high-breakdown voltage and low-leakage current Ga0.51In0.49/In0.15Ga0.85As pseudomorphic HEMT

      IEEE ELECTRON DEVICE LETTERS
    67. Liu, WC; Chang, WL; Lour, WS; Pan, HJ; Wang, WC; Chen, JY; Yu, KH; Feng, SC
      High-performance InGaP/InxGa1-xAs HEMT with an inverted delta-doped V-shaped channel structure

      IEEE ELECTRON DEVICE LETTERS
    68. Shie, YH; Chang, WL; Pan, HJ; Chen, SY; Lour, WS; Liu, WC
      On the low-medium-high step-modulation-doped-channel (LMH-SMDC) heterostructure field-effect transistor

      MATERIALS CHEMISTRY AND PHYSICS
    69. Rezvykh, KA; Romanov, VA
      Gases breakdown voltage calculation for the case of accelerator nonuniformfields by the method of base

      NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT
    70. Chilukuri, RK; Shenoy, PM; Baliga, BJ
      High-temperature operation of SiC planar ACCUFET

      IEEE TRANSACTIONS ON INDUSTRY APPLICATIONS
    71. Frank, K; Dewald, E; Bickes, C; Ernst, U; Iberler, M; Meier, J; Prucker, U; Rainer, A; Schlaug, M; Schwab, J; Urban, J; Weisser, W; Hoffmann, DHH
      Scientific and technological progress of pseudospark devices

      IEEE TRANSACTIONS ON PLASMA SCIENCE
    72. Pacheco-Sotelo, J; Pena-Eguiluz, R; Eguiluz, LP; de los Rios, AS; Sanchez, GC
      Plasma torch ignition by a half bridge resonant converter

      IEEE TRANSACTIONS ON PLASMA SCIENCE
    73. Kuhlmann, U; Sittig, R
      Minimum lateral extension of planar junction terminations

      SOLID-STATE ELECTRONICS
    74. Lee, DH; Kim, HJ; Cho, JS
      Effect of photon density with varying transverse electro-magnetic modes inlaser-guided discharges

      OPTICS AND LASER TECHNOLOGY
    75. Zitouni, M; Morancho, F; Tranduc, H; Rossel, P; Buxo, J; Pages, I; Merchant, S
      A new lateral power MOSFET for smart power ICs: the "LUDMOS concept"

      MICROELECTRONICS JOURNAL
    76. Yoon, SF; Gay, BP; Zheng, HQ; Ang, KS; Wang, H; Ng, GI
      Fabrication and characteristics of In0.48Ga0.52P/In0.20Ga0.80As/GaAs pseudomorphic high electron mobility transistor grown by solid-source molecular beam epitaxy

      MICROELECTRONICS JOURNAL
    77. Lin, YS; Lu, SS; Chang, PZ
      Ga0.51In0.49P/InxGa1-xAs/GaAs lattice-matched and strained doped-channel field-effect transistors grown by gas source molecular beam epitaxy

      JOURNAL OF APPLIED PHYSICS
    78. Chung, SK; Shin, DK
      An analytical model for interaction of SIPOS layer with underlying siliconof SOI RESURF devices

      IEEE TRANSACTIONS ON ELECTRON DEVICES
    79. Lu, SS; Meng, CC; Lin, YS; Lan, H
      The effect of gate recess profile on device performance of Ga0.51In0.49P/In0.2Ga(0.8)As doped-channel FET's

      IEEE TRANSACTIONS ON ELECTRON DEVICES
    80. del Alamo, JA; Somerville, MH
      Breakdown in millimeter-wave power InPHEMT's: A comparison with GaAsPHEMT's

      IEEE JOURNAL OF SOLID-STATE CIRCUITS
    81. ALLEN NL; GOURGOULIS DE; MIKROPOULOS PN; STASSINOPOULOS CA; YAKINTHOS CG
      EFFECTS OF NEGATIVE DIRECT VOLTAGE PRE-STRESSING ON THE BREAKDOWN OF CONDUCTOR-ROD GAPS UNDER POSITIVE IMPULSE VOLTAGES

      IEE proceedings. Science, measurement and technology
    82. COHEN GM; ZISMAN P; BAHIR G; RITTER D
      GROWTH OF STRAINED GAINP ON INP BY METALORGANIC MOLECULAR-BEAM EPITAXY FOR HETEROSTRUCTURE FIELD-EFFECT TRANSISTOR APPLICATION

      Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena
    83. TOU TY; THAM KK; SIEW WO; YEE KC
      CIRCUIT MODELING OF A 2-STAGE BLUMLEIN-DRIVEN TEA-N-2 LASER

      Measurement science & technology
    84. KOJIMA T; YOSHIDA K; FUKUYAMA M; KUDOH Y
      A HIGH-RATED-VOLTAGE ALUMINUM SOLID ELECTROLYTIC CAPACITOR WITH AN ELECTROCONDUCTING-POLYMER ELECTROLYTE

      Denki Kagaku Oyobi Kogyo Butsuri Kagaku
    85. MAIDA O; YAMAMOTO H; OKADA N; KANASHIMA T; OKUYAMA M
      ELECTRONIC CHARACTERIZATION OF SI SIO2 STRUCTURE USING PHOTO-CVD SIO2THIN-FILM ON ATOMICALLY FLAT SI SUBSTRATE/

      Applied surface science
    86. Saxena, V; Steckl, AJ
      Building blocks for SiC devices: Ohmic contacts, Schottky contacts, and p-n junctions

      SIC MATERIALS AND DEVICES
    87. BAE DG; CHUNG SK
      AN ANALYTIC MODEL OF PLANAR JUNCTIONS WITH MULTIPLE FLOATING FIELD LIMITING RINGS

      Solid-state electronics
    88. LEE JL; MUN JK; KIM H
      A NEW SELF-ALIGNED AND T-SHAPED GATE TECHNOLOGY FOR GAAS POWER MESFETS

      Solid-state electronics
    89. WU ZL; GAO YM; LIANG SJ; LUO JS
      ANALYSIS OF THE FP-JTE PLANAR JUNCTION TERMINATION

      Solid-state electronics
    90. Stefanov, E; Charitat, G; Bailon, L
      Design methodology and simulation tool for floating ring termination technique

      SOLID-STATE ELECTRONICS
    91. CHEN XB; MAWBY PA; BOARD K; SALAMA CAT
      THEORY OF A NOVEL VOLTAGE-SUSTAINING LAYER FOR POWER DEVICES

      Microelectronics
    92. BOOS JB; KRUPPA W; BENNETT BR; PARK D; KIRCHOEFER SW; BASS R; DIETRICH HB
      ALSB INAS HEMTS FOR LOW-VOLTAGE, HIGH-SPEED APPLICATIONS/

      I.E.E.E. transactions on electron devices
    93. SOMERVILLE MH; DELALAMO JA; SAUNIER P
      OFF-STATE BREAKDOWN IN POWER PHEMTS - THE IMPACT OF THE SOURCE

      I.E.E.E. transactions on electron devices
    94. HORIUCHI M; TAMURA M
      BESS - A SOURCE STRUCTURE THAT FULLY SUPPRESSES THE FLOATING BODY EFFECTS IN SOI CMOSFETS

      I.E.E.E. transactions on electron devices
    95. IOANNOU DE; DUAN FL; SINHA SP; ZALESKI A
      OPPOSITE-CHANNEL-BASED INJECTION OF HOT-CARRIERS IN SOI MOSFETS - PHYSICS AND APPLICATIONS

      I.E.E.E. transactions on electron devices
    96. REED RP; WALSH RP; SCHUTZ JB
      LARGE-SCALE TESTS OF INSULATED CONDUIT FOR THE ITER CS COIL

      Cryogenics
    97. AHN KH; JEON YJ; JEONG YH; YUN CE; PYO HM
      ENHANCED CURRENT-VOLTAGE CHARACTERISTICS OF AL0.25GA0.75AS IN(0.25)GA(0.75)AS/GAAS P-HEMT USING AN INVERTED DOUBLE-CHANNEL STRUCTURE/

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    98. TAGUCHI H; SATO T; ITAGAKI M; WATANABE M; MORIKAWA Y; ABE Y; SHIMADA T
      EFFECTS OF ELECTRODE GEOMETRY ON BREAKDOWN VOLTAGE OF A SINGLE-GAP PSEUDOSPARK DISCHARGE

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    99. SHIH JR; LEE JH; LIEW BK; HWANG HL
      A NOVEL THIN GATE-OXIDE-THICKNESS MEASUREMENT METHOD BY LDD (LIGHTLY-DOPED-DRAIN)-NMOS (N-CHANNEL METAL-OXIDE-SEMICONDUCTOR) TRANSISTORS

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    100. GOURGOULIS DE; MIKROPOULOS PN; STASSINOPOULOS CA; YAKINTHOS CG
      BEHAVIOR OF POSITIVE CONDUCTOR-ROD GAPS STRESSED BY IMPULSE VOLTAGES IN ATMOSPHERIC AIR

      IEE proceedings. Science, measurement and technology


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Documento generato il 29/10/20 alle ore 13:00:47