Catalogo Articoli (Spogli Riviste)

HELP
ATTENZIONE: attualmente gli articoli Current Contents (fonte ISI) a partire dall'anno 2002 sono consultabili sulla Risorsa On-Line

Le informazioni sugli articoli di fonte ISI sono coperte da copyright

La ricerca find articoli where soggetti phrase all words 'beta-SiC' sort by level,fasc_key/DESCEND, pagina_ini_num/ASCEND ha restituito 118 riferimenti
Si mostrano 100 riferimenti a partire da 1
Selezionare un intervallo

Per ulteriori informazioni selezionare i riferimenti di interesse.

    1. Zhang, LD; Meng, GW; Phillipp, F
      Preparation of nanowires and microarrays

      CHINESE PHYSICS
    2. Zhou, XT; Sun, SX; Peng, HY; Wang, N; Lee, CS; Bello, I; Lee, ST
      Epitaxial growth of beta-SiC on Si (100) by low energy ion beam deposition

      DIAMOND AND RELATED MATERIALS
    3. Catellani, A; Galli, G
      Defects at the carbon terminated SiC(001) surface

      DIAMOND AND RELATED MATERIALS
    4. Amroune, A; Fantozzi, G
      Synthesis of Al2O3-SiC from kyanite precursor

      JOURNAL OF MATERIALS RESEARCH
    5. Pizzagalli, L; Catellani, A
      Ab initio calculations of the H-induced surface restructuring on beta-SiC(001)-(3 x 2)

      SURFACE SCIENCE
    6. Benesch, C; Merz, H; Zacharias, H
      Angle-resolved inverse photoemission of the (2 x 1)-reconstructed 3C-SiC(001) surface

      SURFACE SCIENCE
    7. Widstrand, SM; Johansson, LSO; Magnusson, KO; Larsson, MI; Yeom, HW; Hara, S; Yoshida, S
      Angle-resolved photoemission study of the hydrogenated 3C-SiC(001)-2 x 1-Hsurface

      SURFACE SCIENCE
    8. Na, HJ; Jeong, JK; Um, MY; Kim, BS; Hwang, CS; Kim, HJ
      Effect of annealing on electrical properties of Pt/beta-SiC contact

      SOLID-STATE ELECTRONICS
    9. Watanabe, H; Hisada, Y; Mukainakano, S; Tanaka, N
      In situ observation of the initial growth process of carbon nanotubes by time-resolved high resolution transmission electron microscopy

      JOURNAL OF MICROSCOPY-OXFORD
    10. Dragnea, B; Boulmer, J; Debarre, D; Bourguignon, B
      Growth of a SiC layer on Si(100) from adsorbed propene by laser melting

      JOURNAL OF APPLIED PHYSICS
    11. Nahm, KS; Kim, KC; Lim, KY
      Growth and characterization of SiC/SiNx/Si structures

      JOURNAL OF THE ELECTROCHEMICAL SOCIETY
    12. Basavalingu, B; Moreno, JMC; Byrappa, K; Gogotsi, YG; Yoshimura, M
      Decomposition of silicon carbide in the presence of organic compounds under hydrothermal conditions

      CARBON
    13. Amy, F; Enriquez, H; Soukiassian, P; Brylinski, C; Mayne, A; Dujardin, G
      Si/6H-SiC(0001): An unexpected cubic 4x3 Si phase overlayer

      APPLIED PHYSICS LETTERS
    14. Shirahata, N; Kijima, K; Ma, XL; Ikuhara, Y
      Thermal change of unstable stacking faults in beta-SiC

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    15. Shirahata, N; Kijima, K; Ma, XL; Ikuhara, Y
      A new type of stacking fault in beta-SiC

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    16. Soukiassian, P
      Nanostructures on silicon carbide surfaces

      VIDE-SCIENCE TECHNIQUE ET APPLICATIONS
    17. Lu, WC; Kruger, P; Pollmann, J
      Ab initio studies on the beta-SiC(001)-(5x2) surface

      PHYSICAL REVIEW B
    18. Yeom, HW; Matsuda, I; Chao, YC; Hara, S; Yoshida, S; Uhrberg, RIG
      Hydrogen-induced 3 x 1 phase of the Si-rich 3C-SiC(001) surface

      PHYSICAL REVIEW B
    19. Duda, L; Johansson, LSO; Reihl, B; Yeom, HW; Hara, S; Yoshida, S
      Surface states of the 3C-SiC(001)-c(4 x 2) surface studied using angle-resolved photoemission

      PHYSICAL REVIEW B
    20. Pan, ZW; Lai, HL; Au, FCK; Duan, XF; Zhou, WY; Shi, WS; Wang, N; Lee, CS; Wong, NB; Lee, ST; Xie, SS
      Oriented silicon carbide nanowires: Synthesis and field emission properties

      ADVANCED MATERIALS
    21. Lin, T; Loh, KP; Wee, ATS; Shen, ZX; Lin, J; Lai, CH; Gao, QJ; Zhang, TJ
      High resolution transmission electron microscopy study of the initial growth of diamond on silicon

      DIAMOND AND RELATED MATERIALS
    22. Yun, JH; Dandy, DS
      Model of morphology evolution in the growth of polycrystalline beta-SiC films

      DIAMOND AND RELATED MATERIALS
    23. Chaudhuri, J; Ignatiev, K; Edgar, JH; Xie, ZY; Gao, Y; Rek, Z
      Low temperature chemical vapor deposition of 3C-SiC on 6H-SiC - high resolution X-ray diffractometry and synchrotron X-ray topography study

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    24. Amroune, A; Fantozzi, G; Dubois, J; Deloume, JP; Durand, B; Halimi, R
      Formation of Al2O3-SiC powder from andalusite and carbon

      MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING
    25. Peng, HY; Zhou, XT; Lai, HL; Wang, N; Lee, ST
      Microstructure observations of silicon carbide nanorods

      JOURNAL OF MATERIALS RESEARCH
    26. Douillard, L; Fauchoux, O; Aristov, V; Soukiassian, P
      Scanning tunneling microscopy evidence of background contamination-induced2 X 1 ordering of the beta-SiC(100) c(4 X 2) surface

      APPLIED SURFACE SCIENCE
    27. Galli, G; Pizzagalli, L; Catellani, A; Gygi, F; Baratoff, A
      Physical properties of cubic SiC(001) surfaces from first-principles simulations

      APPLIED SURFACE SCIENCE
    28. Shevlin, SA; Fisher, AJ
      Modeling of the beta-SiC(001)(3x2) surface reconstruction

      APPLIED SURFACE SCIENCE
    29. Derycke, V; Pham, NP; Fonteneau, P; Soukiassian, P; Aboulet-Nze, P; Monteil, Y; Mayne, AJ; Dujardin, G; Gautier, J
      Self-organized 1D nanostructures on the beta-SiC(100) surface: silicon atomic lines and dimer vacancy chains

      APPLIED SURFACE SCIENCE
    30. Enriquez, H; Derycke, V; Aristov, VY; Soukiassian, P; Le Lay, G; di Cioccio, L; Cricenti, A; Croti, C; Ferrari, L; Perfetti, P
      1D electronic properties in temperature-induced c(4x2) to 2x1 transition on the beta-SiC(100) surface

      APPLIED SURFACE SCIENCE
    31. Catellani, A; Galli, G; Rigolli, PL
      Carbon lines on the cubic SiC(001) surface

      PHYSICAL REVIEW B
    32. Shevlin, SA; Fisher, AJ
      Modeling the c(4X2) reconstruction of beta-SiC(001)

      PHYSICAL REVIEW B
    33. Yan, H; Wang, B; Song, XM; Chen, GH; Wong, SP; Kwok, RWM
      Structure characteristic of buried SiC layers

      THIN SOLID FILMS
    34. Lu, WC; Schmidt, WG; Briggs, EL; Bernhole, J
      Optical anisotropy of the SiC(001)-(3 x 2) surface: Evidence for the two-adlayer asymmetric-dimer model

      PHYSICAL REVIEW LETTERS
    35. Koitzsch, C; Conrad, D; Scheerschmidt, K; Gosele, U
      Empirical molecular dynamic study of SiC(0001) surface reconstructions andbonded interfaces

      JOURNAL OF APPLIED PHYSICS
    36. Nienhaus, H; van Elsbergen, V; Monch, W
      Vibrations at 3C-SiC(001)-(3 x 2) surfaces

      EUROPEAN PHYSICAL JOURNAL B
    37. Pampuch, R
      Advanced HT ceramic materials via solid combustion

      JOURNAL OF THE EUROPEAN CERAMIC SOCIETY
    38. Lubbe, M; Lindner, K; Rossow, U; Zahn, DRT
      3C SiC(001) surface structure studied by angular resolved photoelectron spectroscopy and reflectance anisotropy spectroscopy

      DIAMOND AND RELATED MATERIALS
    39. Serre, C; Romano-Rodriguez, A; Perez-Rodriguez, A; Morante, JR; Fonseca, L; Acero, MC; Kogler, R; Skorupa, W
      beta-SiC on SiO2 formed by ion implantation and bonding for micromechanicsapplications

      SENSORS AND ACTUATORS A-PHYSICAL
    40. Soukiassian, P
      Atomic control of Si-terminated cubic silicon carbide (100) surfaces: morphology and self-organized atomic lines

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    41. Zekentes, K; Tsagaraki, K
      Surfactant-mediated MBE growth of beta-SiC on Si substrates

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    42. Ziermann, R; von Berg, J; Obermeier, E; Wischmeyer, F; Niemann, E; Moller, H; Eickhoff, M; Krotz, G
      High temperature piezoresistive beta-SiC-on-SOI pressure sensor with on chip SiC thermistor

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    43. Ferro, G; Planes, N; Papaioannou, V; Chaussende, D; Monteil, Y; Stoemenos, Y; Camassel, J
      Role of SIMOX defects on the structural properties of beta-SiC/SIMOX

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    44. Amy, F; Douillard, L; Aristov, VY; Soukiassian, P
      Oxynitridation of cubic silicon carbide (100) surfaces

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
    45. Pizzagalli, L; Catellani, A; Galli, G; Gygi, F; Baratoff, A
      Theoretical study of Si and N adsorption on the Si-terminated SiC(001) surface

      SURFACE REVIEW AND LETTERS
    46. Duda, L; Johansson, LSO; Reihl, B; Yeom, HW; Hara, S; Yoshida, S
      Angle-resolved photoemission studies of the 3C-SiC(001)(2 x 1) surface

      SURFACE REVIEW AND LETTERS
    47. Lu, WC; Kruger, P; Pollmann, J
      Atomic and electronic structure of beta-SiC(001)-(3 x 2)

      PHYSICAL REVIEW B-CONDENSED MATTER
    48. Gutierrez, R; Haugk, M; Elsner, J; Jungnickel, G; Elstner, M; Sieck, A; Frauenheim, T; Porezag, D
      Reconstructions of the Si-terminated (100) surface in beta-SiC: A theoretical study

      PHYSICAL REVIEW B-CONDENSED MATTER
    49. Luo, X; Qian, GF; Wang, EG; Chen, CF
      Molecular-dynamics simulation of Al/SiC interface structures

      PHYSICAL REVIEW B-CONDENSED MATTER
    50. Kim, HS; Park, YJ; Choi, IH; Baik, YJ
      beta-SiC thin film growth using microwave plasma activated CH4-SiH4 sources

      THIN SOLID FILMS
    51. Duda, L; Johansson, LSO; Reihl, B; Yeom, HW; Hara, S; Yoshida, S
      Electronic structure of the 3C-SiC(001)2 x 1 surface studied with angle-resolved photoelectron spectroscopy

      SURFACE SCIENCE
    52. Shimomura, M; Yeom, HW; Mun, BS; Fadley, CS; Hara, S; Yoshida, S; Kono, S
      Surface core-level shift photoelectron diffraction study of beta-SiC(001)-c(2 x 2) surface

      SURFACE SCIENCE
    53. Yeom, HW; Chao, YC; Terada, S; Hara, S; Yoshida, S; Uhrberg, RIG
      Surface reconstructions of 3C-SiC(001) studied by high-resolution core-level photoemission

      SURFACE SCIENCE
    54. Kitamura, J; Hara, S; Okushi, H; Yoshida, S; Misawa, S; Kajimura, K
      Si-adsorption induced phase transition on the 3C-SiC(001) surface

      SURFACE SCIENCE
    55. Polyakov, VM; Balster, T; Sloboshanin, S; Tautz, FS; Ibach, H; Schaefer, JA
      Surface state-derived electronic transitions of SiC(001)

      SURFACE SCIENCE
    56. Yeom, HW; Shimomura, M; Kitamura, J; Hara, S; Tono, K; Matsuda, I; Mun, BS; Huff, WAR; Kono, S; Ohta, T; Yoshida, S; Okushi, H; Kajimura, K; Fadley, CS
      Atomic and electronic-band structures of anomalous carbon dimers on 3C-SiC(001)-c(2 x 2)

      PHYSICAL REVIEW LETTERS
    57. Soukiassian, P; Aristov, V; Douillard, L; Semond, F; Mayne, A; Dujardin, G; Pizzagalli, L; Joachim, C; Delley, B; Wimmer, E
      Comment on "Missing-row asymmetric-dimer reconstruction of SiC(100)-c(4x2)"

      PHYSICAL REVIEW LETTERS
    58. Lu, WC; Kruger, P; Pollmann, J
      Comment on "Missing-row asymmetric-dimer reconstruction of SiC(100)-c(4x2)" - Reply

      PHYSICAL REVIEW LETTERS
    59. Kim, KC; Nahm, KS; Suh, EK; Hwang, YG
      The surface modification of Si(111) substrates with SiNx for the growth ofhigh quality beta-SiC epilayers

      JOURNAL OF CRYSTAL GROWTH
    60. Ishida, Y; Takahashi, T; Okumura, H; Sekigawa, T; Yoshida, S
      Elongated shaped Si island formation on 3C-SiC by chemical vapor deposition and its application to antiphase domain observation

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    61. ZHANG Z
      HIGH-RESOLUTION TRANSMISSION ELECTRON-MICROSCOPIC STUDY OF SOME LOW-DIMENSIONAL NANOSTRUCTURES

      Microscopy research and technique
    62. WU KH; FANG YK; HO JJ; HSIEH WT; CHUANG WH; HWANG JD
      A HIGH OPTICAL-GAIN BETA-SIC BULK-BARRIER PHOTOTRANSISTOR FOR HIGH-TEMPERATURE APPLICATIONS

      IEEE photonics technology letters
    63. Suzuki, K; Kamiyama, T
      Nanostructure analysis of pyrolyzing conversion from organic polymer precursors to Si-C-(Ti)-O inorganic fibers

      SUPRAMOLECULAR SCIENCE
    64. SHIRAHATA N; KIJIMA K; NAKAHIRA A; TANAKA K
      THERMAL-STABILITY OF STACKING-FAULTS IN B ETA-SIC SPECIMENS

      Nippon Seramikkusu Kyokai gakujutsu ronbunshi
    65. LUBBE M; LINDNER K; SLOBOSHANIN S; TAUTZ S; SCHAFER J; ZAHN DRT
      ANGULAR-RESOLVED VALENCE-BAND SPECTROSCOPY OF DIFFERENT RECONSTRUCTED3C-SIC(001) SURFACES

      Journal of vacuum science & technology. A. Vacuum, surfaces, and films
    66. CAI WW; MA MS; WU JX; ZHU JS; LIU XM; JI MR
      THERMAL EFFECT ON K-PROMOTED OXIDATION OF BETA-SIC

      Applied surface science
    67. TAUTZ FS; SLOBOSHANIN S; HOHENECKER S; ZAHN DRT; SCHAEFER JA
      PHOTOELECTRON-SPECTROSCOPY AT CLEAN AND HYDROGENATED C(2X2)-SIC(100) SURFACES

      Applied surface science
    68. VANELSBERGEN V; NIENHAUS H; MONCH W
      DYNAMICAL PROPERTIES OF 3C-SIC, 4H-SIC, AND 6H-SIC SURFACES

      Applied surface science
    69. YEOM HW; CHAO YC; MATSUDA I; HARA S; YOSHIDA S; UHRBERG RIG
      ELECTRONIC-STRUCTURE OF THE SI-RICH 3C-SIC(001)3X2 SURFACE

      Physical review. B, Condensed matter
    70. LUO X; QIAN GF; FEI WD; WANG EG; CHEN CF
      SYSTEMATIC STUDY OF BETA-SIC SURFACE-STRUCTURES BY MOLECULAR-DYNAMICSSIMULATIONS

      Physical review. B, Condensed matter
    71. PIZZAGALLI L; JOACHIM C; MAYNE A; DUJARDIN G; SEMOND F; DOUILLARD L; SOUKIASSIAN P
      RECONSTRUCTION OF THE SI-TERMINATED BETA-SIC(100) SURFACE

      Thin solid films
    72. BALSTER T; POLYAKOV VM; IBACH H; SCHAEFER JA
      A STUDY OF SURFACE BAND BENDINGS AND CHARGE-DENSITIES OF SIC(001) 2X1AND C(2X2) BY HIGH-RESOLUTION ELECTRON-ENERGY-LOSS SPECTROSCOPY

      Surface science
    73. DYSON AJ; SMITH PV
      EMPIRICAL POTENTIAL STUDY OF THE CHEMISORPTION OF C2H2 AND CH3 ON THEBETA-SIC(001) SURFACE

      Surface science
    74. Kerdiles, S; Rizk, R; Perez-Rodriguez, A; Garrido, B; Gonzalez-Varon, O; Calvo-Barrio, L; Morante, JR
      Magnetron sputtering synthesis of silicon-carbon films: Structural and optical characterization

      SOLID-STATE ELECTRONICS
    75. LU WC; KRUGER P; POLLMANN J
      MISSING-ROW ASYMMETRIC-DIMER RECONSTRUCTION OF SIC(001)-C(4X2)

      Physical review letters
    76. KERN RS; TANAKA S; ROWLAND LB; DAVIS RF
      REACTION-KINETICS OF SILICON-CARBIDE DEPOSITION BY GAS-SOURCE MOLECULAR-BEAM EPITAXY

      Journal of crystal growth
    77. SOUKIASSIAN P; SEMOND F
      ADVANCES IN CUBIC SILICON-CARBIDE SURFACES AND SELF-ORGANIZED ONE-DIMENSIONAL SUB-NANOSCALE OBJECTS

      Journal de physique. IV
    78. GOGOTSI YG; JEON ID; MCNALLAN MJ
      CARBON COATINGS ON SILICON-CARBIDE BY REACTION WITH CHLORINE-CONTAINING GASES

      Journal of materials chemistry
    79. CONTRERAS S; DEZAUZIER C; THOMAS P; ROBERT JL
      ANALYSIS OF TRANSPORT-PROPERTIES OF BETA-SIC FILMS - DETERMINATION OFDONOR DENSITY AND COMPENSATION RATIO

      DIAMOND AND RELATED MATERIALS
    80. PAPAIOANNOU V; KOMNINOU P; DIMITRAKOPULOS GP; ZEKENTES K; PECZ B; KARAKOSTAS T; STOEMENOS J
      TOPOLOGY OF TWIN JUNCTIONS IN EPITAXIAL BETA-SIC

      DIAMOND AND RELATED MATERIALS
    81. REICHERT W; LOSSY R; SIRGO MG; OBERMEIER E; SKORUPA W
      INVESTIGATION OF THE EFFECTS OF HIGH-TEMPERATURE IMPLANTATION AND POST IMPLANTATION ANNEALING ON THE ELECTRICAL BEHAVIOR OF NITROGEN-IMPLANTED BETA-SIC FILMS

      DIAMOND AND RELATED MATERIALS
    82. REICHERT W; OBERMEIER E; STOEMENOS J
      BETA-SIC FILMS ON SOI SUBSTRATES FOR HIGH-TEMPERATURE APPLICATIONS

      DIAMOND AND RELATED MATERIALS
    83. PEHRSSON PE; THOMS BD
      SURFACE OXIDATION CHEMISTRY OF BETA-SIC

      Journal of vacuum science & technology. A. Vacuum, surfaces, and films
    84. KERN RS; JARRENDAHL K; TANAKA S; DAVIS RF
      HOMOEPITAXIAL SIC GROWTH BY MOLECULAR-BEAM EPITAXY

      Physica status solidi. b, Basic research
    85. POLLMANN J; KRUGER P; SABISCH M
      ATOMIC AND ELECTRONIC-STRUCTURE OF SIC SURFACES FROM AB-INITIO CALCULATIONS

      Physica status solidi. b, Basic research
    86. BERMUDEZ VM
      STRUCTURE AND PROPERTIES OF CUBIC SILICON-CARBIDE-(100) SURFACES - A REVIEW

      Physica status solidi. b, Basic research
    87. CHA YHC; KIM PG; DOERR HJ; BUNSHAH RF
      SUBSTRATE BIAS EFFECT OF THE ACTIVATED REACTIVE EVAPORATION PROCESSEDBETA-SIC THIN-FILMS

      Surface & coatings technology
    88. YAMAMOTO T; MAKI T; KOBAYASHI T
      SURFACE OBSERVATION OF BETA-SIC SUBSTRATE AFTER NEGATIVE BIAS TREATMENT IN DIAMOND DEPOSITION

      Applied surface science
    89. KACKELL P; BECHSTEDT F; HUSKEN H; SCHROTER B; RICHTER W
      ANOMALOUS WEAK BONDING OF SI DIMERS ON THE SIC(001) SURFACE

      Surface science
    90. BJORKETUN LO; HULTMAN L; IVANOV IP; WAHAB Q; SUNDGREN JE
      INTERFACIAL VOID FORMATION DURING VAPOR-PHASE GROWTH OF 3C-SIC ON SI(001) AND SI(111) SUBSTRATES - CHARACTERIZATION BY TRANSMISSION ELECTRON-MICROSCOPY

      Journal of crystal growth
    91. WU KH; FANG YK; ZHOU JH; HO JJ
      BETA-SIC PHOTODIODES PREPARED ON SILICON SUBSTRATES BY RAPID THERMAL CHEMICAL-VAPOR-DEPOSITION

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    92. ROY R; RAVICHANDRAN D; BADZIAN A; BREVAL E
      ATTEMPTED HYDROTHERMAL SYNTHESIS OF DIAMOND BY HYDROLYSIS OF BETA-SICPOWDER

      DIAMOND AND RELATED MATERIALS
    93. KISHI K; UMEBAYASHI S
      ROOM-TEMPERATURE STRENGTH AND FRACTURE-TO UGHNESS OF BETA-SIALON(Z=1)-SIC COMPOSITE FABRICATED FROM ALUMINUM-ISO-PROPOXIDE, ALPHA-SI3N4 ANDBETA-SIC

      Nippon Seramikkusu Kyokai gakujutsu ronbunshi
    94. SHIMADA S; AKAZAWA N; KUDO K
      SYNTHESIS OF BETA-SIC WHISKERS FROM SILIC A BLACK ORE

      Nippon Seramikkusu Kyokai gakujutsu ronbunshi
    95. WAHAB Q; KARLSTEEN M; NUR O; HULTMAN L; WILLANDER M; SUNDGREN JE
      HETEROJUNCTION DIODES IN 3C-SIC SI SYSTEM GROWN BY REACTIVE MAGNETRONSPUTTERING - EFFECTS OF GROWTH TEMPERATURE ON DIODE RECTIFICATION ANDBREAKDOWN/

      Journal of electronic materials
    96. JORGENSON LV; VANVEEN A; SCHUT H
      POSITRON REEMISSION FROM EPITAXIALLY GROWN BETA-SIC

      Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms
    97. KACKELL P; FURTHMULLER J; BECHSTEDT F; KRESSE G; HAFNER J
      CHARACTERIZATION OF CARBON-CARBON BONDS ON THE SIC(001)C(2X2) SURFACE

      Physical review. B, Condensed matter
    98. BAHNG W; KIM HJ
      EPITAXIAL-GROWTH OF BETA-SIC THIN-FILMS USING BIS-TRIMETHYLSILYLMETHANE ON SI(100) WITH A POLYCRYSTALLINE BUFFER LAYER

      Thin solid films
    99. HALICIOGLU T
      MULTILAYER RELAXATION FEATURES ON (100) AND (111) SURFACE OF BETA-SIC

      Thin solid films
    100. CATELLANI A; GALLI G; GYGI F
      RECONSTRUCTION AND THERMAL-STABILITY OF THE CUBIC SIC(001) SURFACES

      Physical review letters


ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 07/06/20 alle ore 09:43:33