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La ricerca find articoli where soggetti phrase all words 'WAFERS' sort by level,fasc_key/DESCEND, pagina_ini_num/ASCEND ha restituito 608 riferimenti
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    1. Saito, T; Xia, JX; Kim, R; Aoki, T; Kobayashi, H; Furuta, Y; Kamakura, Y
      Initial anomalous diffusion of boron atoms at low-temperature annealing

      ELECTRONICS AND COMMUNICATIONS IN JAPAN PART II-ELECTRONICS
    2. Greco, V; Marchesini, F; Molesini, G
      Optical contact and van der Waals interactions: the role of the surface topography in determining the bonding strength of thick glass plates

      JOURNAL OF OPTICS A-PURE AND APPLIED OPTICS
    3. Popov, VP; Antonova, IV; Bak-Misiuk, J; Domagala, J
      Defect transformation study in silicon-on-insulator structures by high-resolution X-Ray diffraction

      MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
    4. Gaubas, E; Vaitkus, J; Simoen, E; Claeys, C; Vanhellemont, J
      Excess carrier cross-sectional profiling technique for determination of the surface recombination velocity

      MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
    5. Reif, J; Schneider, T; Wolfframm, D; Schmid, RP
      Femtosecond nonlinear optical characterisation of silicon wafers: the roleof symmetry

      MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
    6. Muhlstein, CL; Brown, SB; Ritchie, RO
      High-cycle fatigue of single-crystal silicon thin films

      JOURNAL OF MICROELECTROMECHANICAL SYSTEMS
    7. Lorenz, M; Hochmuth, H; Natusch, D; Kusunoki, M; Svetchnikov, VL; Riede, V; Stanca, I; Kastner, G; Hesse, D
      High-quality Y-Ba-Cu-O thin films by PLD - Ready for market applications

      IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY
    8. Mandelis, A
      Diffusion-wave laser radiometric diagnostic quality-control technologies for materials NDE/NDT

      NDT & E INTERNATIONAL
    9. Takagi, H; Maeda, R; Suga, T
      Room-temperature wafer bonding of Si to LiNbO3, LiTaO3 and Gd3Ga5O12 by Ar-beam surface activation

      JOURNAL OF MICROMECHANICS AND MICROENGINEERING
    10. Kohler, J; Strandman, C; Vallin, O; Hedlund, C; Backlund, Y
      Silicon fusion bond interfaces resilient to wet anisotropic etchants

      JOURNAL OF MICROMECHANICS AND MICROENGINEERING
    11. Lowney, D; McNally, PJ; O'Hare, M; Herbert, PAF; Tuomi, T; Rantamaki, R; Karilahti, M; Danilewsky, AN
      Examination of the structural and optical failure of ultra-bright LEDs under varying degrees of electrical stress using synchrotron X-ray topography and optical emission spectroscopy

      JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
    12. Schroder, DK
      Surface voltage and surface photovoltage: history, theory and applications

      MEASUREMENT SCIENCE & TECHNOLOGY
    13. Gasparini, FM; Kimball, MO; Mooney, KP
      The superfluid transition of He-4, a test case for finite-size scaling at a second-order phase transition

      JOURNAL OF PHYSICS-CONDENSED MATTER
    14. Mimura, M; Ishikawa, S; Saitoh, T
      Effect of thermal annealing on minority-carrier lifetimes in multicrystalline Si wafers

      SOLAR ENERGY MATERIALS AND SOLAR CELLS
    15. Zhou, XT; Sun, SX; Peng, HY; Wang, N; Lee, CS; Bello, I; Lee, ST
      Epitaxial growth of beta-SiC on Si (100) by low energy ion beam deposition

      DIAMOND AND RELATED MATERIALS
    16. Li, HX; Li, CB; He, YJ; Liu, GR; Chen, YS; Duan, SZ
      Oxygen precipitation in floating-zone silicon grown in hydrogen ambience and its application

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    17. Tanner, BK; Allwood, DA; Mason, NJ
      Kinetics of native oxide film growth on epiready GaAs

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    18. Hidalgo, P; Mendez, B; Piqueras, J; Dutta, PS
      Study of Zn diffusion in n-type GaSb by cathodoluminescence and scanning tunneling spectroscopy

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    19. Li, XB; Zou, HM; Pan, J
      A study of interfacial residual stress field in a K2O center dot 6TiO(2w)/Al composite by LACBED and 3-D finite element method

      MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING
    20. Chung, HY; Kim, YH; Cho, HY; Lee, BY; Yoo, HD; Lee, SH
      Collection efficiency of metallic contaminants on Si wafer by vapor-phase decomposition-droplet collection

      ANALYTICAL SCIENCES
    21. Todorovic, DM; Nikolic, PM; Bojicic, AI; Vasiljevic-Radovic, DG; Radulovic, KT
      Thermoelastic and electronic deformation components of photoacoustic signal in two-layer system

      ANALYTICAL SCIENCES
    22. Pei, ZJ; Strasbaugh, A
      Fine grinding of silicon wafers

      INTERNATIONAL JOURNAL OF MACHINE TOOLS & MANUFACTURE
    23. Juang, A; Scherman, OA; Grubbs, RH; Lewis, NS
      Formation of covalently attached polymer overlayers on Si(111) surfaces using ring-opening metathesis polymerization methods

      LANGMUIR
    24. Ionescu, AM; Munteanu, D
      A novel in-situ SOI characterization technique: The intrinsic point-probe MOSFET

      IEEE ELECTRON DEVICE LETTERS
    25. Boo, JH; Lee, SB; Lee, KW; Yu, KS; Kim, Y; Yeon, SH; Jung, IN
      Epitaxial growth of cubic SiC thin films on silicon using single molecularprecursors by metalorganic chemical vapor deposition

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
    26. Kim, MG; Yun, Z; Lyou, J; Cho, S; Park, YJ; Kim, EK
      Visible photoluminescence from porous poly-Si/Si and amorphous-Si/Si structures

      JOURNAL OF THE KOREAN PHYSICAL SOCIETY
    27. Silfen, R; Amir, A; Hauben, DJ; Calderon, S
      Effect of facial pressure garments for burn injury in adult patients afterorthodontic treatment

      BURNS
    28. Current, MI; Liu, W; Roth, IS; Lamm, AJ; En, WG; Malik, IJ; Feng, L; Bryan, MA; Qin, S; Henley, FJ; Chan, C; Cheung, NW
      A plasma immersion implantation system for materials modification

      SURFACE & COATINGS TECHNOLOGY
    29. Shen, YJ; Zhang, ZM; Tsai, BK; DeWitt, DP
      Bidirectional reflectance distribution function of rough silicon wafers

      INTERNATIONAL JOURNAL OF THERMOPHYSICS
    30. Suzuki, T
      Oxygen partial pressure dependence of suppressing oxidation-induced stacking fault generation in argon ambient annealing including oxygen and HCl

      APPLIED SURFACE SCIENCE
    31. Himcinschi, C; Milekhin, A; Friedrich, M; Hiller, K; Wiemer, M; Gessner, T; Schulze, S; Zahn, DRT
      Silicon oxide in Si-Si bonded wafers

      APPLIED SURFACE SCIENCE
    32. Rodriguez, ME; Mendoza, PJ; Mandelis, A; Nicolaides, L
      Combined photothermal and photoacoustic characterization of silicon-epoxy composites and the existence of a particle thermal percolation threshold

      NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
    33. Hahn, PO
      The 300 mm silicon wafer - a cost and technology challenge

      MICROELECTRONIC ENGINEERING
    34. Segal, AS; Galyukov, AO; Kondratyev, AV; Sid'ko, AP; Karpov, SY; Makarov, YN; Siebert, W; Storck, P
      Comparison of silicon epitaxial growth on the 200-and 300-mm wafers from trichlorosilane in Centura reactors

      MICROELECTRONIC ENGINEERING
    35. Akatsuka, M; Sueoka, K; Adachi, N; Morimoto, N; Katahama, H
      Mechanical properties of 300 mm wafers

      MICROELECTRONIC ENGINEERING
    36. Fischer, A; Richter, H; Shalynin, A; Krottenthaler, P; Obermeier, G; Lambert, U; Wahlich, R
      Upper yield point of large diameter silicon

      MICROELECTRONIC ENGINEERING
    37. Bialas, F; Winkler, R; Dietrich, H
      Intrinsic gettering of 300 mm CZ wafers

      MICROELECTRONIC ENGINEERING
    38. Kersten, H; Deutsch, H; Steffen, H; Kroesen, GMW; Hippler, R
      The energy balance at substrate surfaces during plasma processing

      VACUUM
    39. Ogura, A; Hiroi, M
      Depth profiles of As and B implanted into Si-on-insulator substrates

      THIN SOLID FILMS
    40. Zhu, HN; Liu, BX
      Pattern evolution during the growth of CrSi2 layers on Si (111) upon high current pulsed Cr ion implantation

      THIN SOLID FILMS
    41. Furuya, H; Harada, K; Park, JG
      Defect reduction and improved gettering in CZ single-crystal silicon

      SOLID STATE TECHNOLOGY
    42. Kaczmarek, SM
      Influence of gamma and proton radiations on the absorption, photoluminescence and birefringence of lithium niobate single crystals doped with Cu, Fe and Cr ions

      NUKLEONIKA
    43. Naumann, M; Rudolph, P; Neubert, M; Donecker, J
      Dislocation studies in VCz GaAs by laser scattering tomography

      JOURNAL OF CRYSTAL GROWTH
    44. Xie, ZY; Edgar, JH; Burkland, BK; George, JT; Chaudhuri, J
      DPBs-free and polytype controlled growth of SiC via surface etching on on-axis 6H-SiC(0001)

      JOURNAL OF CRYSTAL GROWTH
    45. Mock, P
      Slip in GaAs substrates during molecular beam epitaxial growth: an X-ray topographic survey

      JOURNAL OF CRYSTAL GROWTH
    46. Jurkschat, K; Senkader, S; Wilshaw, PR; Gambaro, D; Falster, RJ
      Onset of slip in silicon containing oxide precipitates

      JOURNAL OF APPLIED PHYSICS
    47. Kalinina, E; Kholujanov, G; Zubrilov, A; Solov'ev, V; Davydov, D; Tregubova, A; Sheglov, M; Kovarskii, A; Yagovkina, M; Violina, G; Pensl, G; Hallen, A; Konstantinov, A; Karlsson, S; Rendakova, S; Dmitriev, V
      Structural, electrical, and optical properties of low-doped 4H-SiC chemical vapor deposited epitaxial layers

      JOURNAL OF APPLIED PHYSICS
    48. Macdonald, D; Sinton, RA; Cuevas, A
      On the use of a bias-light correction for trapping effects in photoconductance-based lifetime measurements of silicon

      JOURNAL OF APPLIED PHYSICS
    49. Takahashi, J; Kawakami, K; Nakai, K
      Effect of void shape in Czochralski-Si wafers on the intensity of laser-scattering

      JOURNAL OF APPLIED PHYSICS
    50. Kimoto, T; Yamamoto, T; Chen, ZY; Yano, H; Matsunami, H
      Chemical vapor deposition and deep level analyses of 4H-SiC(11(2)over-bar0)

      JOURNAL OF APPLIED PHYSICS
    51. Possart, W; Valeske, B
      Annealing of a cyanurate prepolymer adhesive on aluminium and gold substrates

      JOURNAL OF ADHESION
    52. Kawamura, K; Deai, H; Sakamoto, H; Yano, T; Hamaguchi, I; Takayama, S; Nagatake, Y; Tachimori, M; Matsumura, A
      Gate oxide integrity on ITOX-SIMOX substrates and influence of test devicegeometry on characterization

      IEEE TRANSACTIONS ON ELECTRON DEVICES
    53. Wu, CT; Ridley, R; Roman, P; Dolny, G; Grebs, T; Hao, J; Ruzyllo, J
      The effect of surface treatments and growth conditions on electrical characteristics of thick (> 50 nm) gate oxides

      JOURNAL OF THE ELECTROCHEMICAL SOCIETY
    54. Sama, S; Porrini, M; Fogale, F; Servidori, M
      Investigation of Czochralski silicon grown with different interstitial oxygen concentrations and point defect populations

      JOURNAL OF THE ELECTROCHEMICAL SOCIETY
    55. Johnson, B; Tan, Y; Anderson, P; Seraphin, S; Anc, MJ
      The effects of surface capping during annealing on the microstructure of ultrathin SIMOX materials

      JOURNAL OF THE ELECTROCHEMICAL SOCIETY
    56. Yi, C; Kim, HU; Rhee, SW
      Characterization of deposition process, microstructure and interfacial states of silicon dioxide film using tetraethylorthosilicate/O-2 with various dilution gases

      JOURNAL OF THE ELECTROCHEMICAL SOCIETY
    57. Habuka, H; Maruyama, K; Suzuki, T
      Design of a rapid thermal processing system using a reflection-resolved ray tracing method

      JOURNAL OF THE ELECTROCHEMICAL SOCIETY
    58. Roy, S; Gupte, Y; Green, TA
      Flow cell design for metal deposition at recessed circular electrodes and wafers

      CHEMICAL ENGINEERING SCIENCE
    59. Niemczyk, TM; Zhang, SB; Haaland, DM
      Monitoring dielectric thin-film production on product wafers using infrared emission spectroscopy

      APPLIED SPECTROSCOPY
    60. Lenahan, PM; Mishima, TD; Fogarty, TN; Wilkins, R
      Atomic-scale processes involved in long-term changes in the density of states distribution at the Si/SiO2 interface

      APPLIED PHYSICS LETTERS
    61. Zhang, WD; Zhang, JF; Uren, MJ; Groeseneken, G; Degraeve, R; Lalor, M; Burton, D
      On the interface states generated under different stress conditions

      APPLIED PHYSICS LETTERS
    62. Langhanki, B; Greulich-Weber, S; Spaeth, JM; Michel, J
      Detection of two dangling bond centers with trigonal symmetry at and belowa (100) Si/SiO2 interface

      APPLIED PHYSICS LETTERS
    63. Stesmans, A; Afanas'ev, VV
      Comment on "Do Pb1 centers have levels in the Si band gap? Spin-dependentrecombination study of the Pb1 'hyperfine spectrum'"

      APPLIED PHYSICS LETTERS
    64. Takahashi, M; Nakashima, S; Kodate, J; Ohno, T
      Characterization of the interface between the top Si and buried oxide in separation by implanted oxygen wafers

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    65. Kawahara, T; Okamoto, M; Kimura, A; Morimoto, J; Tahira, K; Miyakawa, T; Yoshino, K; Ikari, T
      Photoacoustic spectra for porous silicon using piezoelectric transducer and microphone

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    66. Itoga, T; Hozawa, K; Takeda, K; Isomae, S; Ohkura, M
      New technique to determine gettering efficiency of heavy metals and its application to carbon-ion-implanted Si epitaxial wafers

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    67. Park, JG; Lee, SH; Kim, SY
      Particle removal and its mechanism on hydrophobic silicon wafer in highly diluted NH4OH solutions with an added surfactant

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    68. Lee, WP; Seow, WS; Yow, HK; Tou, TY
      Analysis of atomic force microscopy images of crystal originated "particles" on silicon wafers treated with NH4OH : H2O2 : H2O solution

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    69. Ogura, A
      Formation of buried oxide layer in Si substrates by oxygen precipitation at implantation damage of light ions

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    70. Koker, L; Kolasinski, KW
      Photoelectrochemical etching of Si and porous Si in aqueous HF

      PCCP PHYSICAL CHEMISTRY CHEMICAL PHYSICS
    71. Stesmans, A
      Dissociation kinetics of hydrogen-passivated P-b defects at the (111)Si/SiO2 interface

      PHYSICAL REVIEW B
    72. Oosterbroek, RE; Berenschot, JW; Jansen, HV; Nijdam, AJ; Pandraud, G; van den Berg, A; Elwenspoek, MC
      Etching methodologies in < 111 >-oriented silicon wafers

      JOURNAL OF MICROELECTROMECHANICAL SYSTEMS
    73. Cheng, YT; Lin, LW; Najafi, K
      Localized silicon fusion and eutectic bonding for MEMS fabrication and packaging

      JOURNAL OF MICROELECTROMECHANICAL SYSTEMS
    74. Liu, J; Chen, YS
      Simulation of rapid thermal processing in a distributed computing environment

      NUMERICAL HEAT TRANSFER PART A-APPLICATIONS
    75. Fu, XN; Li, XJ; Jai, Y; Yao, QK; Zeng, FG; Chen, QW; Zhang, YH
      Size-separation effect of blue-emitting porous silicon in RTO process

      ACTA PHYSICA SINICA
    76. Kim, HU; Rhee, SW
      Electrical properties of bulk silicon dioxide and SiO2/Si interface formedby tetraethylorthosilicate (TEOS)-oxygen plasma enhanced chemical vapor deposition

      JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
    77. Wereszczak, AA; Barnes, AS; Breder, K; Binapal, S
      Probabilistic strength of {111} n-type silicon

      JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
    78. Riviere-Jerome, A; Levada, C; Vanderschaeve, G; Percheron-Garcon, I; Forgerit, B
      A TEM study of slip lines in power MOS devices

      JOURNAL OF PHYSICS-CONDENSED MATTER
    79. Iavarone, M; Andreone, A; Orgiani, P; Pica, G; Salluzzo, M; Vaglio, R; Kulyk, II; Palmieri, V
      A simple and reliable system for in situ deposition of large-area double-sided, superconducting films

      SUPERCONDUCTOR SCIENCE & TECHNOLOGY
    80. Ghannam, MY; Abouelsaood, AA; Nijs, JF
      A semiquantitative model of a porous silicon layer used as a light diffuser in a thin film solar cell

      SOLAR ENERGY MATERIALS AND SOLAR CELLS
    81. Bochobza-Degani, O; Seter, DJ; Socher, E; Nemirovsky, Y
      Design and noise consideration of an accelerometer employing modulated integrative differential optical sensing

      SENSORS AND ACTUATORS A-PHYSICAL
    82. Pasquariello, D; Lindeberg, M; Hedlund, C; Hjort, K
      Surface energy as a function of self-bias voltage in oxygen plasma wafer bonding

      SENSORS AND ACTUATORS A-PHYSICAL
    83. Kissinger, G; Vanhellemont, J; Obermeier, G; Esfandyari, J
      Denuded zone formation by conventional and rapid thermal anneals

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    84. Nolan, M; Perova, T; Moore, RA; Moore, CJ; Berwick, K; Gamble, HS
      Micro-Raman study of stress distribution generated in silicon during proximity rapid thermal diffusion

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    85. Poyai, A; Simoen, E; Claeys, C; Czerwinski, A
      Silicon substrate effects on the current-voltage characteristics of advanced p-n junction diodes

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    86. Ritter, G; Harrington, J; Tillack, B; Morgenstern, T; Dietze, GR; Radzimski, ZJ
      Low temperature Si epitaxy in a vertical LPCVD batch reactor

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    87. Sassella, A; Borghesi, A; Borionetti, G; Geranzani, P
      Optical absorption of precipitated oxygen in silicon at liquid helium temperature

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    88. Sumino, K
      Defect reaction and its application to silicon materials technology

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    89. Bullis, WM
      Current trends in silicon defect technology

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    90. Benson, TM; Arrand, HF; Sewell, P; Niemeyer, D; Loni, A; Bozeat, RJ; Kruger, M; Arens-Fischer, R; Thonissen, M; Luth, H
      Progress towards achieving integrated circuit functionality using porous silicon optoelectronic components

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    91. Kimball, MO; Gasparini, FM
      Specific heat of He-4 confined to 9869 angstrom planar geometry

      PHYSICA B
    92. Buttard, D; Eymery, J; Rieutord, F; Fournel, F; Lubbert, D; Baumbach, T; Moriceau, H
      Grazing incidence X-ray studies of twist-bonded Si/Si and Si/SiO2 interfaces

      PHYSICA B
    93. Lee, S; Kuga, Y; Mullen, RA
      Optically tunable millimeter-wave attenuator based on layered structures

      MICROWAVE AND OPTICAL TECHNOLOGY LETTERS
    94. Kim, MJ; Carpenter, RW; Cox, MJ; Xu, J
      Controlled planar interface synthesis by ultrahigh vacuum diffusion bonding/deposition

      JOURNAL OF MATERIALS RESEARCH
    95. Bergholz, W; Gilles, D
      Impact of research on defects in silicon on the microelectronic industry

      PHYSICA STATUS SOLIDI B-BASIC RESEARCH
    96. Ha, S; Nuhfer, NT; Rohrer, GS; De Graef, M; Skowronski, M
      Identification of prismatic slip bands in 4H SiC boules grown by physical vapor transport

      JOURNAL OF ELECTRONIC MATERIALS
    97. Bertagna, V; Rouelle, F; Erre, R; Chemla, M
      Electrochemical test for silicon surface contamination by copper traces inHF, HF plus HCl and HF+NH4F dilute solutions

      SEMICONDUCTOR SCIENCE AND TECHNOLOGY
    98. Coue, E; Chausse, JP
      A microwave method for electrical measurements of semiconductors: theory and measurements

      SEMICONDUCTOR SCIENCE AND TECHNOLOGY
    99. Huang, I; Liu, HH; Yu, CC
      Design for control: Temperature uniformity in rapid thermal processor

      KOREAN JOURNAL OF CHEMICAL ENGINEERING
    100. Lue, HT; Huang, BY; Lue, JT
      Photoluminescence and electron paramagnetic resonance studies of defect centers in porous silicon

      MATERIALS CHEMISTRY AND PHYSICS


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Documento generato il 11/08/20 alle ore 23:21:41