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    1. Siebentritt, S; Kampschulte, T; Bauknecht, A; Blieske, U; Harneit, W; Fiedeler, U; Lux-Steiner, M
      Cd-free buffer layers for CIGS solar cells prepared by a dry process

      SOLAR ENERGY MATERIALS AND SOLAR CELLS
    2. Chaussende, D; Ferro, G; Monteil, Y
      Vapour-liquid-solid mechanism for the growth of SiC homoepitaxial layers by VPE

      JOURNAL OF CRYSTAL GROWTH
    3. Ahn, SH; Lee, SH; Nahm, KS; Suh, EK; Hong, MH
      Catalytic growth of high quality GaN micro-crystals

      JOURNAL OF CRYSTAL GROWTH
    4. Yuan, HR; Lu, DC; Liu, XL; Chen, Z; Han, P; Wang, XH; Wang, D
      Statistical investigation on morphology development of gallium nitride in initial growth stage

      JOURNAL OF CRYSTAL GROWTH
    5. Johansson, J; Seifert, W
      Kinetics of self-assembled island formation: Part I - Island density

      JOURNAL OF CRYSTAL GROWTH
    6. Johansson, J; Seifert, W
      Kinetics of self-assembled island formation: Part II - Island size

      JOURNAL OF CRYSTAL GROWTH
    7. Lu, DC; Duan, SK
      Quasi-thermo dynamic analysis of MOVPE growth of GaxAlyIn1-x-yN

      JOURNAL OF CRYSTAL GROWTH
    8. Koide, T; Isogai, Y; Fujiwara, Y; Takeda, Y
      OMVPE growth and properties of Dy-doped III-V semiconductors

      PHYSICA E
    9. Mohammad, SN
      Trap-assisted recombination in semiconductors: application to group III gallium nitride material and junctions

      PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICSELECTRONIC OPTICAL AND MAGNETIC PROPERTIES
    10. Pawlowski, RP; Salinger, AG; Romero, LA; Shadid, JN
      Computational design and analysis of MOVPE reactors

      JOURNAL DE PHYSIQUE IV
    11. Davis, RF; Gehrke, T; Linthicum, KJ; Rajagopal, P; Roskowski, AM; Zheleva, T; Preble, EA; Zorman, CA; Mehregany, M; Schwarz, U; Schuck, J; Grober, R
      Review of pendeo-epitaxial growth and characterization of thin films of GaN and AlGaN alloys on 6H-SiC(0001) and Si(111) substrates

      MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH
    12. Visconti, P; Reshchikov, MA; Jones, KM; Wang, DF; Cingolani, R; Morkoc, H; Molnar, RJ; Smith, DJ
      Highly selective photoelectrochemical etching of nitride materials for defect investigation and device fabrication

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    13. Poole, PJ; McCaffrey, J; Williams, RL; Lefebvre, J; Chithrani, D
      Chemical beam epitaxy growth of self-assembled InAs/InP quantum dots

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    14. Ratnikov, VV; Mamutin, VV; Vekshin, VA; Ivanov, SV
      X-ray diffractometric study of the influence of a buffer layer on the microstructure of molecular-beam epitaxial InN layers of different thicknesses

      PHYSICS OF THE SOLID STATE
    15. Zhang, W; Li, C; Du, Z
      A thermodynamic database of the Al-Ga-In-P-As-Sb-C-H system and its application in the design of an epitaxy process for III-V semiconductors

      JOURNAL OF PHASE EQUILIBRIA
    16. Kudo, K; Yashiki, K; Morimoto, T; Hisanaga, Y; Sudo, S; Muroya, Y; Tamanuki, T; Hatakeyama, H; Mori, K; Sasaki, T
      Multirange wavelength-selectable microarray light sources simultaneously fabricated on a wafer covering the entire C-band

      IEEE PHOTONICS TECHNOLOGY LETTERS
    17. Morkoc, H
      III-Nitride semiconductor growth by MBE: Recent issues

      JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
    18. As, DJ; Kohler, U
      Carbon - an alternative acceptor for cubic GaN

      JOURNAL OF PHYSICS-CONDENSED MATTER
    19. Cadoret, R; Trassoudaine, A
      Growth of gallium nitride by HVPE

      JOURNAL OF PHYSICS-CONDENSED MATTER
    20. Amano, H; Akasaki, I
      Novel aspects of the growth of nitrides by MOVPE

      JOURNAL OF PHYSICS-CONDENSED MATTER
    21. Hiramatsu, K
      Epitaxial lateral overgrowth techniques used in group III nitride epitaxy

      JOURNAL OF PHYSICS-CONDENSED MATTER
    22. Zheng, MJ; Zhang, LD; Zhang, JG
      Size dependence of non-linear optical properties Of SiO2 thin films containing InP nanocrystals

      APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
    23. Morkoc, H
      Comprehensive characterization of hydride VPE grown GaN layers and templates

      MATERIALS SCIENCE & ENGINEERING R-REPORTS
    24. Akahori, K; Wang, G; Okumura, K; Soga, T; Jimbo, T; Umeno, M
      Improvement of the MOCVD-grown InGaP-on-Si towards high-efficiency solar cell application

      SOLAR ENERGY MATERIALS AND SOLAR CELLS
    25. Zhang, ZC; Huang, BB; Cui, DL
      Growth of AlxGa1-xP on GaAs substrate by metalorganic vapor phase epitaxy

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    26. Dumont, H; Auvray, L; Monteil, Y; Bouix, J
      Analysis of nitrogen incorporation mechanisms in GaAs1-xNx/GaAs epilayers grown by MOVPE

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    27. Hiramatsu, K; Haino, M; Yamaguchi, M; Miyake, H; Motogaito, A; Sawaki, N; Iyechika, Y; Maeda, T
      GaN layer structures with buried tungsten nitrides (WNx) using epitaxial lateral overgrowth via MOVPE

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    28. Witte, H; Krtschil, A; Lisker, M; Krost, A; Christen, J; Kuhn, B; Scholz, F
      Detailed deep trap analysis in Mg-doped p-type GaN layers grown by MOVPE

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    29. Muret, P; Philippe, A; Monroy, E; Munoz, E; Beaumont, B; Omnes, F; Gibart, P
      Deep levels in MOCVD n-type hexagonal gallium nitride studied by high resolution deep level transient spectroscopy

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    30. Kim, HM; Oh, JE; Kang, TW
      Nonuniformities in free-standing GaN substrates

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    31. Walukiewicz, W
      Intrinsic limitations to the doping of wide-gap semiconductors

      PHYSICA B
    32. Yoshino, K; Mitani, N; Sugiyama, M; Chichibu, SF; Komaki, H; Ikari, T
      Optical and electrical properties of AgIn(SSe)(2) crystals

      PHYSICA B
    33. Albe, V; Lewis, LJ
      Optical properties of InAs/InP ultrathin quantum wells

      PHYSICA B
    34. Okamoto, K; Kawakami, Y; Fujita, S; Terazima, M
      Photothermal processes of wide-bandgap semiconductors probed by the transient grating method

      ANALYTICAL SCIENCES
    35. Guan, ZP; Cai, AL; Porter, H; Cabalu, J; Chen, J; Huang, S; Giedd, RE
      GaN grown on two-step cleaned C-terminated 6H-SiC by molecular-beam epitaxy

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
    36. Yu, PY; Martinez, G; Zeman, J; Uchida, K
      Spectroscopic study of partially ordered semiconductor heterojunction under high pressure and high magnetic field

      JOURNAL OF RAMAN SPECTROSCOPY
    37. Song, YH; Kim, JH; Jang, HJ; Joon, SR; Yang, JW; Lim, KY; Yang, GM
      Effect of growth conditions on GaN grown by lateral epitaxial overgrowth

      JOURNAL OF THE KOREAN PHYSICAL SOCIETY
    38. Yamaguchi, T; Saito, Y; Kano, K; Araki, T; Teraguchi, N; Suzuki, A; Nanishi, Y
      Study of epitaxial relationship in InN growth on sapphire (0001) by RF-MBE

      PHYSICA STATUS SOLIDI B-BASIC RESEARCH
    39. Hong, YK; Kim, CS; Jung, HS; Hong, CH; Kim, MH; Leem, SJ; Cho, HK; Lee, JY
      Structural properties of GaN grown by pendeo-epitaxy with in-doping

      PHYSICA STATUS SOLIDI B-BASIC RESEARCH
    40. Yamamoto, A; Tanikawa, T; Ikuta, K; Adachi, M; Hashimoto, A; Ito, Y
      Non-monotonous behavior of in-doped GaN grown by MOVPE with nitrogen carrier gas

      PHYSICA STATUS SOLIDI B-BASIC RESEARCH
    41. Beaumont, B; Vennegues, P; Gibart, P
      Epitaxial lateral overgrowth of GaN

      PHYSICA STATUS SOLIDI B-BASIC RESEARCH
    42. Neugebauer, J
      Ab initio analysis of surface structure and adatom kinetics of group-III nitrides

      PHYSICA STATUS SOLIDI B-BASIC RESEARCH
    43. Browning, ND; Arslan, I; Moeck, P; Topuria, T
      Atomic resolution scanning transmission electron microscopy

      PHYSICA STATUS SOLIDI B-BASIC RESEARCH
    44. Kret, S; Ruterana, P; Rosenauer, A; Gerthsen, D
      Extracting quantitative information from high resolution electron microscopy

      PHYSICA STATUS SOLIDI B-BASIC RESEARCH
    45. Wang, B; Chua, SJ
      Optical properties of InAs quantum dots grown on InP (001) substrate by MOCVD

      PHYSICA STATUS SOLIDI B-BASIC RESEARCH
    46. Kobayashi, T; Inoue, K; Prins, AD; Uchida, K; Nakahara, J
      High pressure photoluminescence study of the GaAs/partially ordered GaInP interface

      PHYSICA STATUS SOLIDI B-BASIC RESEARCH
    47. Ronning, C; Carlson, EP; Davis, RF
      Ion implantation into gallium nitride

      PHYSICS REPORTS-REVIEW SECTION OF PHYSICS LETTERS
    48. Yuan, HR; Lu, DC; Liu, XL; Chen, Z; Wang, XH; Wang, D; Han, PD
      Indium doping effect on GaN in the initial growth stage

      JOURNAL OF ELECTRONIC MATERIALS
    49. Barrios, CA; Messmer, ER; Holmgren, M; Risberg, A; Halonen, J; Lourdudoss, S
      Epitaxially regrown GaAs/AlGaAs laser mesas with semi-insulating GaInP : Fe and GaAs : Fe

      JOURNAL OF ELECTRONIC MATERIALS
    50. Zubia, D; Zhang, S; Bommena, R; Sun, X; Brueck, SRJ; Hersee, SD
      Initial nanoheteroepitaxial growth of GaAs on Si(100) by OMVPE

      JOURNAL OF ELECTRONIC MATERIALS
    51. Bostrup, G; Hess, KL; Ellsworth, J; Cooper, D; Haines, R
      LPE HgCdTe on sapphire status and advancements

      JOURNAL OF ELECTRONIC MATERIALS
    52. Zhang, XG; Rodriguez, A; Li, P; Jain, FC; Ayers, JE
      A novel approach for the complete removal of threading dislocations from ZnSe on GaAs (001)

      JOURNAL OF ELECTRONIC MATERIALS
    53. Mitra, P; Case, FC; Glass, HL; Speziale, VM; Flint, JP; Tobin, SP; Norton, PW
      HgCdTe growth on (552) oriented CdZnTe by metalorganic vapor phase epitaxy

      JOURNAL OF ELECTRONIC MATERIALS
    54. Hsu, JWP; Manfra, MJ; Lang, DV; Baldwin, KW; Pfeiffer, LN; Molnar, RJ
      Surface morphology and electronic properties of dislocations in AlGaN/GaN heterostructures

      JOURNAL OF ELECTRONIC MATERIALS
    55. Polyakov, AY; Smirnov, NB; Govorkov, AV; Zhang, AP; Ren, F; Pearton, SJ; Chyi, JI; Nee, TE; Chou, CC; Lee, CM
      Electrical properties and spectra of deep centers in GaN p-i-n rectifier structures

      JOURNAL OF ELECTRONIC MATERIALS
    56. Lee, CD; Ramachandran, V; Sagar, A; Feenstra, RM; Greve, DW; Sarney, WL; Salamanca-Riba, L; Look, DC; Bai, S; Choyke, WJ; Devaty, RP
      Properties of GaN epitaxial layers grown on 6H-SiC(0001) by plasma-assisted molecular beam epitaxy

      JOURNAL OF ELECTRONIC MATERIALS
    57. Hardtdegen, H; Schmidt, R; Wirtz, K; Mueck, A; Guadagnuolo, S; Vergani, G
      On the suitability of getter-purified hydrogen for the LP-MOVPE of (AlGa)As: A comparison to Pd-diffused hydrogen

      JOURNAL OF ELECTRONIC MATERIALS
    58. Blattner, AJ; Lensch, J; Wessels, BW
      Growth and characterization of OMVPE grown (In,Mn)As diluted magnetic semiconductor

      JOURNAL OF ELECTRONIC MATERIALS
    59. Bourret-Courchesne, ED; Yu, KM; Benamara, M; Liliental-Weber, Z; Washburn, J
      Mechanisms of dislocation reduction in GaN using an intermediate temperature interlayer

      JOURNAL OF ELECTRONIC MATERIALS
    60. Knauer, A; Wenzel, H; Erbert, G; Sumpf, B; Weyers, M
      Influence of oxygen in AlGaAs-based laser structures with Al-free active region on device properties

      JOURNAL OF ELECTRONIC MATERIALS
    61. Hannappel, T; Toben, L; Moller, K; Willig, F
      In-situ monitoring of InP(100) and GaP(100) interfaces and characterization with RDS at 20 K

      JOURNAL OF ELECTRONIC MATERIALS
    62. Wiersma, R; Stotz, JAH; Pitts, OJ; Wang, CX; Thewalt, MLW; Watkins, SP
      P-type carbon doping of GaSb

      JOURNAL OF ELECTRONIC MATERIALS
    63. Kosikova, J; Leitner, J; Pangrac, J; Melichar, K; Jurek, K; Drbohlav, I; Stejskal, J
      Ga1-xInxSb-MOVPE growth and thermodynamic model

      SEMICONDUCTOR SCIENCE AND TECHNOLOGY
    64. Hwang, JS; Lee, CH; Yang, FH; Chen, KH; Hwa, LG; Yang, YJ; Chen, LC
      Resistive heated MOCVD deposition of InN films

      MATERIALS CHEMISTRY AND PHYSICS
    65. Sciana, B; Radziewicz, D; Paszkiewicz, B; Tlaczala, M; Utko, M; Sitarek, P; Misiewcz, J; Kinder, R; Kovac, J
      Epitaxial growth and characterisation of silicon delta-doped GaAs, AlAs and AlxGa1-xAs

      CRYSTAL RESEARCH AND TECHNOLOGY
    66. Oszwaldowski, M; Berus, T; Szade, J; Jozwiak, K; Olejniczak, I; Konarski, P
      Structural properties of InSbBi and InSbAsBi thin films prepared by the flash-evaporation method

      CRYSTAL RESEARCH AND TECHNOLOGY
    67. Pimpinelli, A; Videcoq, A; Vladimirova, M
      Kinetic surface patterning in two-particle models of epitaxial growth

      APPLIED SURFACE SCIENCE
    68. Nishio, M; Hayashida, K; Guo, QX; Ogawa, H
      Growth rate characteristics and photoluminescence properties of ZnTe in MOVPE system

      APPLIED SURFACE SCIENCE
    69. Lovergine, N; Cola, A; Prete, P; Tapfer, L; Bayhan, M; Mancini, AM
      On hydrogen transport VPE-grown CdTe epilayers for fabrication of 1-100 keV X-ray detectors

      NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT
    70. Kawahara, T; Ohbuchi, Y; Morimoto, J; Goto, H; Ido, T
      Photoacoustic spectra of Sb-doped ZnSe

      MATERIALS LETTERS
    71. Kim, HM; Oh, JE; Kang, TW
      Preparation of large area free-standing GaN substrates by HVPE using mechanical polishing liftoff method

      MATERIALS LETTERS
    72. Janson, MS; Hallen, A; Linnarsson, MK; Svensson, BG
      Hydrogen diffusion, complex formation, and dissociation in acceptor-doped silicon carbide - art. no. 195202

      PHYSICAL REVIEW B
    73. Hofmann, T; Leibiger, G; Gottschalch, V; Pietzonka, I; Schubert, M
      Infrared dielectric function and phonon modes of highly disordered (AlxGa1-x)(0.52)In0.48P - art. no. 155206

      PHYSICAL REVIEW B
    74. Paskov, PP; Paskova, T; Holtz, PO; Monemar, B
      Spin-exchange splitting of excitons in GaN - art. no. 115201

      PHYSICAL REVIEW B
    75. Rodina, AV; Dietrich, M; Goldner, A; Eckey, L; Hoffmann, A; Efros, AL; Rosen, M; Meyer, BK
      Free excitons in wurtzite GaN - art. no. 115204

      PHYSICAL REVIEW B
    76. Arnaudov, B; Paskova, T; Goldys, EM; Evtimova, S; Monemar, B
      Modeling of the free-electron recombination band in emission spectra of highly conducting n-GaN - art. no. 045213

      PHYSICAL REVIEW B
    77. Yamaguchi, S; Kariya, M; Kashima, T; Nitta, S; Kosaki, M; Yukawa, Y; Amano, H; Akasaki, I
      Control of strain in GaN using an In doping-induced hardening effect - art. no. 035318

      PHYSICAL REVIEW B
    78. Bourret, A; Adelmann, C; Daudin, B; Rouviere, JL; Feuillet, G; Mula, G
      Strain relaxation in (0001) AlN/GaN heterostructures - art. no. 245307

      PHYSICAL REVIEW B
    79. Seong, MJ; Mascarenhas, A; Olson, JM; Cheong, HM
      Anisotropy of phonon modes in spontaneously ordered GaInP2 - art. no. 235205

      PHYSICAL REVIEW B
    80. Shilo, D; Lakin, E; Zolotoyabko, E
      Comprehensive strain analysis in thin films based on high-resolution x-raydiffraction: Application to implanted LiNbO3 - art. no. 205420

      PHYSICAL REVIEW B
    81. Davis, RF; Gehrke, T; Linthicum, KJ; Zheleva, TS; Rajagopal, P; Zorman, CA; Mehregany, M
      Pendeo-epitaxial growth and characterization of thin films of gallium nitride and related materials on SiC(0001) and si(111) substrates

      ZEITSCHRIFT FUR METALLKUNDE
    82. Gerhardt, M; Kirpal, G; Schwabe, R; Benndorf, G; Gottschalch, V
      The influence of alternative group-V sources on heterointerface quality inthe system GaInAs(P) on InP

      THIN SOLID FILMS
    83. Yuan, K; Radhakrishnan, K; Zheng, HQ; Zhuang, QD; Ing, GI
      Characterization of linearly graded metamorphic InGaP buffer layers on GaAs using high-resolution X-ray diffraction

      THIN SOLID FILMS
    84. Sochinskii, NV; Reig, C; Mora-Sero, I; Peraza, J; Munoz, V
      Vapor growth of Hg1-xCdxI2 on glass using CdTe buffer

      THIN SOLID FILMS
    85. Toben, L; Hannappel, T; Moller, K; Crawack, HJ; Pettenkofer, C; Willig, F
      RDS, LEED and STM of the P-rich and Ga-rich surfaces of GaP(100)

      SURFACE SCIENCE
    86. Chernyak, L; Osinsky, A; Schulte, A
      Minority carrier transport in GaN and related materials

      SOLID-STATE ELECTRONICS
    87. Aggarwal, RL; Melngailis, I; Verghese, S; Molnar, RJ; Geis, MW; Mahoney, LJ
      Temperature dependence of the breakdown voltage for reverse-biased GaN p-n-n(+) diodes

      SOLID STATE COMMUNICATIONS
    88. Sugisaki, M; Ren, HW; Nishi, K; Masumoto, Y
      Photoluminescence and micro-imaging study of optically anisotropic InP self-assembled quantum dots

      SOLID STATE COMMUNICATIONS
    89. McNally, PJ; Tuomi, T; Lowney, D; Jacobs, K; Danilewsky, AN; Rantamaki, R; O'Hare, M; Considine, L
      Epitaxial lateral overgrowth of GaN on sapphire - An examination of epitaxy quality using synchrotron X-ray topography

      PHYSICA STATUS SOLIDI A-APPLIED RESEARCH
    90. Paskova, T; Paskov, PP; Darakchieva, V; Tungasmita, S; Birch, J; Monemar, B
      Defect reduction in HVPE growth of GaN and related optical spectra

      PHYSICA STATUS SOLIDI A-APPLIED RESEARCH
    91. Matoussi, A; Boufaden, T; Missaoui, A; Guermazi, S; Bessais, B; Mlik, Y; El Jani, B
      Porous silicon as an intermediate buffer layer for GaN growth on (100) Si

      MICROELECTRONICS JOURNAL
    92. Lederer, MJ; Kolev, V; Luther-Davies, B; Tan, HH; Jagadish, C
      Ion-implanted InGaAs single quantum well semiconductor saturable absorber mirrors for passive mode-locking

      JOURNAL OF PHYSICS D-APPLIED PHYSICS
    93. Czyszanowski, T; Nakwaski, W
      How many quantum wells in nitride lasers?

      JOURNAL OF PHYSICS D-APPLIED PHYSICS
    94. Ratnikov, VV; Kyutt, RN; Shubina, TV; Paskova, T; Monemar, B
      Determination of microdistortion components and their application to structural characterization of HVBE GaN epitaxial layers

      JOURNAL OF PHYSICS D-APPLIED PHYSICS
    95. Feichtinger, P; Poust, B; Goorsky, MS; Oster, D; Chambers, J; Moreland, J
      Misfit dislocation interactions in low mismatch p/p(+) Si

      JOURNAL OF PHYSICS D-APPLIED PHYSICS
    96. Kim, TW; Lee, DU; Choo, DC; Lee, JH; Jung, M; Cho, J; Seo, KY; Yoon, YS
      Microstructural and optical properties of ZnO thin films grown on InSb (111) substrates

      JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS
    97. Kim, HS; Oh, DK; Park, MH; Hwang, N; Choi, IH
      Selective area MOVPE growth for 1.55 mu m laser diodes with vertically tapered thickness waveguide

      JOURNAL OF MATERIALS SCIENCE
    98. Browning, ND; Arslan, I; Ito, Y; James, EM; Klie, RF; Moeck, P; Topuria, T; Xin, Y
      Application of atomic scale STEM techniques to the study of interfaces anddefects in materials

      JOURNAL OF ELECTRON MICROSCOPY
    99. Szyszko, T; Kamler, G; Strojek, B; Weisbrod, G; Podsiadlo, S; Adamowicz, L; Gebicki, W; Szczytko, J; Twardowski, A; Sikorski, K
      Growth of bulk Ga1-xMnxN single crystals

      JOURNAL OF CRYSTAL GROWTH
    100. Lee, HS; Lee, JY; Kim, TW; Park, HL
      Long-range order in CdxZn1-xTe epilayers grown on GaAs substrates

      JOURNAL OF CRYSTAL GROWTH


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Documento generato il 04/06/20 alle ore 21:44:07