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    1. Miura-Mattausch, M; Mattausch, J; Arora, N; Yang, C
      Mosfet modeling gets physical - Toward sub-100-nm MOSFET models for circuit simulation that accurately represent new physical phenomena

      IEEE CIRCUITS & DEVICES
    2. Beljonne, D; Cornil, J; Sirringhaus, H; Brown, PJ; Shkunov, M; Friend, RH; Bredas, JL
      Optical signature of delocalized polarons in conjugated polymers

      ADVANCED FUNCTIONAL MATERIALS
    3. Lapkowski, M; Gullierez, S; Bidan, G; Chauvet, O
      Electrochemical and spectroelectrochemical behavior of 3,4 ',4 '',4 '''-tetraoctyl-5 '''-chloro-2,2 ': 5 ',2 '': 5 '',2 '''-quaterthiophene - a shortchain model compound for regioregular poly(3-alkylthiophene)

      JOURNAL OF ELECTROANALYTICAL CHEMISTRY
    4. Yang, MC; Rockey, TJ; Pursell, D; Dai, HL
      Layer-by-layer structure in ultrathin aniline and pyridine films on Ag(111)

      JOURNAL OF PHYSICAL CHEMISTRY B
    5. Kelley, TW; Frisbie, CD
      Gate voltage dependent resistance of a single organic semiconductor grain boundary

      JOURNAL OF PHYSICAL CHEMISTRY B
    6. Kharitonov, AB; Wasserman, J; Katz, E; Willner, I
      The use of impedance spectroscopy for the characterization of protein-modified ISFET devices: Application of the method for the analysis of biorecognition processes

      JOURNAL OF PHYSICAL CHEMISTRY B
    7. Hutchison, GR; Ratner, MA; Marks, TJ; Naaman, R
      Adsorption of polar molecules on a molecular surface

      JOURNAL OF PHYSICAL CHEMISTRY B
    8. Ji, HF; Dabestani, R; Brown, GM; Hettich, RL
      Synthesis and sensing behavior of cyanoanthracene modified 1,3-alternate calix[4]benzocrown-6: a new class of Cs+ selective optical sensors

      JOURNAL OF THE CHEMICAL SOCIETY-PERKIN TRANSACTIONS 2
    9. Mitschke, U; Bauerle, P
      Synthesis, characterization, and electrogenerated chemiluminescence of phenyl-substituted, phenyl-annulated, and spirofluorenyl-bridged oligothiophenes

      JOURNAL OF THE CHEMICAL SOCIETY-PERKIN TRANSACTIONS 1
    10. Kroemer, H
      Quasi-electric fields and band offsets: Teaching electrons new tricks (Nobel lecture)

      CHEMPHYSCHEM
    11. Katz, HE; Siegrist, T; Schon, JH; Kloc, C; Batlogg, B; Lovinger, AJ; Johnson, J
      Solid-state structural and electrical characterization of N-benzyl and N-alkyl naphthalene 1,4,5,8-tetracarboxylic diimides

      CHEMPHYSCHEM
    12. Brataas, A; Nazarov, YV; Bauer, GEW
      Spin-transport in multi-terminal normal metal-ferromagnet systems with non-collinear magnetizations

      EUROPEAN PHYSICAL JOURNAL B
    13. Wurthner, F
      Plastic transistors reach maturity for mass applications in microelectronics

      ANGEWANDTE CHEMIE-INTERNATIONAL EDITION
    14. Beer, PD; Gale, PA
      Anion recognition and sensing: The state of the art and future perspectives

      ANGEWANDTE CHEMIE-INTERNATIONAL EDITION
    15. El-Ghayoury, A; Schenning, APHJ; van Hal, PA; van Duren, JKJ; Janssen, RAJ; Meijer, EW
      Supramolecular hydrogen-bonded oligo(p-phenylene vinylene) polymers

      ANGEWANDTE CHEMIE-INTERNATIONAL EDITION
    16. Lavigne, JJ; Anslyn, EV
      Sensing a paradigm shift in the field of molecular recognition: From selective to differential receptors

      ANGEWANDTE CHEMIE-INTERNATIONAL EDITION
    17. Ferry, DK; Khoury, M; Gerousis, C; Rack, MJ; Gunther, A; Goodnick, SM
      Single-electron charging effects in Si MOS devices

      PHYSICA E
    18. Brandt, MS; Goennenwein, STB; Stutzmann, M
      Spin-dependent electronic noise

      PHYSICA E
    19. Ryzhii, V; Ryzhii, M
      Periodic electric-field and charge domains in multiple quantum well infrared photodetectors

      INFRARED PHYSICS & TECHNOLOGY
    20. Hosomi, T; Tsuji, K; Maki, T; Kobayashi, T
      Surface conduction of diamond films induced by high-temperature CaF2 deposition

      NEW DIAMOND AND FRONTIER CARBON TECHNOLOGY
    21. Villard, B; Calmon, F; Gontrand, C
      Design and characterization of high voltage devices integrated in a standard CMOS technology

      EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS
    22. Bourguiga, R; Garnier, F; Horowitz, G; Hajlaoui, R; Delannoy, P; Hajlaoui, M; Bouchriha, H
      Simulation of I-V characteristics of organic thin film transistor: Application to the dihexylquaterthiophene

      EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS
    23. Deneuville, A; Gheeraert, E
      Quality, doping, electronic and electrochemical applications of diamond

      VIDE-SCIENCE TECHNIQUE ET APPLICATIONS
    24. Zambov, L; Caussat, B; Boubeker, R; Couderc, JP
      Kinetics of the initial stages of film formation during low pressure chemical vapour deposition of polysilicon by pyrolysis of silane

      JOURNAL DE PHYSIQUE IV
    25. Kouvatsos, DN; Vamvakas, VE; Davazoglou, D
      Characterization and stressing properties of polysilicon TFTs utilizing oxide films deposited using TEOS

      JOURNAL DE PHYSIQUE IV
    26. Oda, S; Nishiguchi, K
      Nanocrystalline silicon quantum dots prepared by VHF plasma enhanced chemical vapor deposition

      JOURNAL DE PHYSIQUE IV
    27. Kim, CC; Kim, JK; Lee, JL; Je, JH; Yi, MS; Noh, DY; Hwu, Y; Ruterana, P
      High-temperature structural behavior of Ni/Au contact on GaN (0001)

      MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH
    28. Straub, B; Meyer, E; Fromherz, P
      Recombinant maxi-K channels on transistor, a prototype of iono-electronic interfacing

      NATURE BIOTECHNOLOGY
    29. Yoon, SF; Ng, TK; Zheng, HQ
      Low damage and low surface roughness GaInP etching in Cl-2/Ar electron cyclotron resonance process

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    30. Cheng, KG; Lee, JJ; Chen, Z; Shah, SA; Hess, K; Leburton, JP; Lyding, JW
      Fundamental connection between hydrogen/deuterium desorption at silicon surfaces in ultrahigh vacuum and at oxide/silicon interfaces in metal-oxide-semiconductor devices

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    31. Hashizume, T; Ootomo, S; Oyama, S; Konishi, M; Hasegawa, H
      Chemistry and electrical properties of surfaces of GaN and GaN/AlGaN heterostructures

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    32. Makela, T; Haatainen, T; Ahopeito, J; Isotalo, H
      Imprinted electrically conductive patterns from a polyaniline blend

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    33. Ion, AC; Ion, I; Antonisse, MMG; Snelink-Ruel, BHM; Reinhoudt, DN
      Characteristics of fluoride-selective electrode with uranyl salophen receptors in aqueous solutions

      RUSSIAN JOURNAL OF GENERAL CHEMISTRY
    34. Jiang, XH; Horiguchi, S
      Statistical skew modeling for general clock distribution networks in presence of process variations

      IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS
    35. Grinyaev, SN; Razzhuvalov, AN
      Resonant electron tunneling in GaN/Ga1-xAlxN(0001) strained structures with spontaneous polarization and piezoeffect

      PHYSICS OF THE SOLID STATE
    36. Hsieh, BR; Melnyk, AR
      Organic pigment nanoparticle thin film devices via Lewis acid pigment solubilization and in situ pigment dispersions

      JOURNAL OF IMAGING SCIENCE AND TECHNOLOGY
    37. Shimada, Y; Arita, K; Kato, Y; Uchiyama, K; Joshi, V; Lim, M
      A read-disturb-free ferroelectric gate FET memory

      INTEGRATED FERROELECTRICS
    38. Barthelemy, H; Koudobine, I; Van Landeghem, D
      Bipolar low-power operational transresistance amplifier based on first generation current conveyor

      IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-ANALOG AND DIGITAL SIGNAL PROCESSING
    39. Tian, H; El Gamal, A
      Analysis of 1/f noise in switched MOSFET circuits

      IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-ANALOG AND DIGITAL SIGNAL PROCESSING
    40. Ramirez-Angulo, J; Lopez, AJ
      MITE circuits: The continuous-time counterpart to switched-capacitor circuits

      IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-ANALOG AND DIGITAL SIGNAL PROCESSING
    41. Jackson, SA; Killens, JC; Blalock, BJ
      A programmable current mirror for analog trimming using single-poly floating-gate devices in standard CMOS technology

      IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-ANALOG AND DIGITAL SIGNAL PROCESSING
    42. Tadeusiewicz, M
      Global and local stability of circuits containing MOS transistors

      IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-FUNDAMENTAL THEORY AND APPLICATIONS
    43. Seguin, F; Fabre, A
      New second generation current conveyor with reduced parasitic resistance and bandpass filter application

      IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-FUNDAMENTAL THEORY AND APPLICATIONS
    44. Born, D; Wagner, T; Krech, W; Hubner, U; Fritzsch, L
      Fabrication of ultrasmall tunnel junctions by electron beam direct-writing

      IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY
    45. Lanzani, G; Cerullo, G; Stagira, S; De Silvestri, S
      Excited state dynamics of oligothiophenes studied by transient pump-probe spectroscopy

      JOURNAL OF PHOTOCHEMISTRY AND PHOTOBIOLOGY A-CHEMISTRY
    46. Gao, HJ; Shi, DX; Zhang, HX; Lin, X
      Ultrahigh data density storage with scanning tunneling microscopy

      CHINESE PHYSICS
    47. Zhang, XY; Li, ZR; Yan, WS; Wang, XG; Wei, SQ; Lu, KQ
      XAFS studies on local structures of nanocrystalline and crystalline GaN

      JOURNAL OF INFRARED AND MILLIMETER WAVES
    48. Zhou, YG; Shen, B; Liu, J; Zhou, HM; Yu, HQ; Zhang, R; Shi, Y; Zheng, YD
      Extraction of polarization-induced charge density in modulation-doped AlxGa1-xN/GaN heterostructure through the simulation of the Schottky capacitance-voltage characteristics

      ACTA PHYSICA SINICA
    49. Osterod, F; Peters, L; Kraft, A; Sano, T; Morrison, JJ; Feeder, N; Holmes, AB
      Luminescent supramolecular assemblies based on hydrogen-bonded complexes of stilbenecarboxylic acids and dithieno[3,2-b : 2 ',3 '-d]thiophene-2-carboxylic acids with a tris(imidazoline) base

      JOURNAL OF MATERIALS CHEMISTRY
    50. Park, YB; Rhee, SW
      Bulk and interface properties of low-temperature silicon nitride films deposited by remote plasma enhanced chemical vapor deposition

      JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
    51. Cavaco, A; Sobolev, NA; Carmo, MC; Presting, H; Konig, U
      Evaluation of the infrared absorption in nm-thick heavily boron-doped Si1-xGex layers on silicon

      JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
    52. Morkoc, H
      III-Nitride semiconductor growth by MBE: Recent issues

      JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
    53. Bakueva, L; Sargent, EH; Resendes, R; Bartole, A; Manners, I
      Electronic properties of semiconducting poly(ferrocenylsilane) thin films with vapor-phase iodine diffusion doping

      JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
    54. Ingebrandt, S; Yeung, CK; Krause, M; Offenhausser, A
      Cardiomyocyte-transistor-hybrids for sensor application

      BIOSENSORS & BIOELECTRONICS
    55. Xing, H; Keller, S; Wu, YF; McCarthy, L; Smorchkova, IP; Buttari, D; Coffie, R; Green, DS; Parish, G; Heikman, S; Shen, L; Zhang, N; Xu, JJ; Keller, BP; DenBaars, SP; Mishra, UK
      Gallium nitride based transistors

      JOURNAL OF PHYSICS-CONDENSED MATTER
    56. Kamiya, T; Suemasu, A; Watanabe, T; Sameshima, T; Shimizu, I
      Improvement of transport properties for polycrystalline silicon prepared by plasma-enhanced chemical vapor deposition

      APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
    57. Fichou, D; Charra, F; Gusev, AO
      Nanoscale STM detection of photocurrents in organic semiconductors

      ADVANCED MATERIALS
    58. Hooks, DE; Fritz, T; Ward, MD
      Epitaxy and molecular organization on solid substrates

      ADVANCED MATERIALS
    59. Winter, JO; Liu, TY; Korgel, BA; Schmidt, CE
      Recognition molecule directed interfacing between semiconductor quantum dots and nerve cells

      ADVANCED MATERIALS
    60. Kawase, T; Sirringhaus, H; Friend, RH; Shimoda, T
      Inkjet printed via-hole interconnections and resistors for all-polymer transistor circuits

      ADVANCED MATERIALS
    61. Lee, YH; Jang, YT; Choi, CH; Kim, DH; Lee, CW; Lee, JE; Han, YS; Yoon, SS; Shin, JK; Kim, ST; Kim, EK; Ju, BK
      Direct nanowiring of carbon nanotubes for highly integrated electronic andspintronic devices

      ADVANCED MATERIALS
    62. Schon, JH; Kloc, C; Wildeman, J; Hadziioannou, G
      Gate-induced superconductivity in oligophenylenevinylene single crystals

      ADVANCED MATERIALS
    63. Cornil, J; Beljonne, D; Calbert, JP; Bredas, JL
      Interchain interactions in organic pi-conjugated materials: Impact on electronic structure, optical response, and charge transport

      ADVANCED MATERIALS
    64. Unlu, H
      Modeling of heterojunction bipolar transistors at any temperature, pressure, strain and alloy composition

      COMPUTATIONAL MATERIALS SCIENCE
    65. Boreland, M; Illy, E
      "Through-the-glass'', double-sided laser crystallisation using copper vapour lasers for the production of thin film silicon material

      SOLAR ENERGY MATERIALS AND SOLAR CELLS
    66. Umezawa, H; Taniuchi, H; Arima, T; Tachiki, M; Kawarada, H
      Potential applications of surface channel diamond field-effect transistors

      DIAMOND AND RELATED MATERIALS
    67. Williams, OA; Whitfield, MD; Jackman, RB; Foord, JS; Butler, JE; Nebel, CE
      Carrier generation within the surface region of hydrogenated thin film polycrystalline diamond

      DIAMOND AND RELATED MATERIALS
    68. Mantel, BF; Stammler, M; Ristein, J; Ley, L
      The correlation between surface conductivity and adsorbate coverage on diamond as studied by infrared spectroscopy

      DIAMOND AND RELATED MATERIALS
    69. Bertilsson, K; Dubaric, E; Nilsson, HE; Hjelm, M; Petersson, CS
      Monte Carlo simulation of vertical MESFETs in 2H, 4H and 6H-SiC

      DIAMOND AND RELATED MATERIALS
    70. Schroth, P; Schoning, MJ; Luth, H; Weissbecker, B; Hummel, HE; Schutz, S
      Extending the capabilities of an antenna/chip biosensor by employing various insect species

      SENSORS AND ACTUATORS B-CHEMICAL
    71. Wroblewski, W; Wojciechowski, K; Dybko, A; Brzozka, Z; Egberink, RJM; Snellink-Ruel, BHM; Reinhoudt, DN
      Durability of phosphate-selective CHEMFETs

      SENSORS AND ACTUATORS B-CHEMICAL
    72. Chudy, M; Wroblewski, W; Dybko, A; Brzozka, Z
      Multi-ion analysis based on versatile sensor head

      SENSORS AND ACTUATORS B-CHEMICAL
    73. Torsi, L; Dodabalapur, A; Cioffi, N; Sabbatini, L; Zambonin, PG
      NTCDA organic thin-film-transistor as humidity sensor: weaknesses and strengths

      SENSORS AND ACTUATORS B-CHEMICAL
    74. Kharitonov, AB; Zayats, M; Alfonta, L; Katz, E; Willner, I
      A novel ISFET-based NAD(+)-dependent enzyme sensor for lactate

      SENSORS AND ACTUATORS B-CHEMICAL
    75. Ritter, C; Heike, F; Herbert, K; Josef, KF; Susanne, L; Christian, N; Helmut, O; Gabriele, P; Bernhard, S; Marieluise, S; Wolfgang, S; Gregor, S
      Multiparameter miniaturised sensor arrays for multiple use

      SENSORS AND ACTUATORS B-CHEMICAL
    76. Kunsagi-Mate, S; Nagy, G; Kollar, L
      Investigation of the interaction of calixarene (host) and neutral benzotrifluoride (guest) - Comparison of luminescence characteristics of calixarenes with results of model calculations relating to complex formation

      SENSORS AND ACTUATORS B-CHEMICAL
    77. Bouvet, M; Guillaud, G; Leroy, A; Maillard, A; Spirkovitch, S; Tournilhac, FG
      Phthalocyanine-based field-effect transistor as ozone sensor

      SENSORS AND ACTUATORS B-CHEMICAL
    78. Grunebaum, U; Oehm, J; Schumacher, K
      Mismatch modeling and simulation - A comprehensive approach

      ANALOG INTEGRATED CIRCUITS AND SIGNAL PROCESSING
    79. van den Bosch, A; Steyaert, M; Sansen, W
      An accurate statistical yield model for CMOS current-steering D/A converters

      ANALOG INTEGRATED CIRCUITS AND SIGNAL PROCESSING
    80. Conti, M; Crippa, P; Orcioni, S; Turchetti, C
      Parametric yield optimization of MOS IC's affected by device mismatch

      ANALOG INTEGRATED CIRCUITS AND SIGNAL PROCESSING
    81. Lopez-Ahumada, R; Rodriguez-Macias, R
      FASTEST: A tool for a complete and efficient statistical evaluation of analog circuits. DC analysis

      ANALOG INTEGRATED CIRCUITS AND SIGNAL PROCESSING
    82. Oehm, J; Grunebaum, U
      Statistical analysis and optimization of a bandgap reference for VLSI applications

      ANALOG INTEGRATED CIRCUITS AND SIGNAL PROCESSING
    83. Van den Bosch, A; Steyaert, M; Sansen, W
      The impact of statistical design on the area of high performance CMOS current-steering D/A converters

      ANALOG INTEGRATED CIRCUITS AND SIGNAL PROCESSING
    84. Lan, MF; Tammineedi, A; Geiger, R
      Current mirror layout strategies for enhancing matching performance

      ANALOG INTEGRATED CIRCUITS AND SIGNAL PROCESSING
    85. Le Bihan, F; Carvou, E; Fortin, B; Rogel, R; Salaun, AC; Bonnaud, O
      Realization of polycrystalline silicon magnetic sensors

      SENSORS AND ACTUATORS A-PHYSICAL
    86. Osten, HJ; Knoll, D; Rucker, H
      Dopant diffusion control by adding carbon into Si and SiGe: principles anddevice application

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    87. Saravanan, S; Soga, T; Jimbo, T; Umeno, M
      Deep levels reduction in (NH4)(2)S treated and annealed GaAs epilayer on Si substrate

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    88. Borghs, G; DeBoeck, J
      Material aspects of spin injection in semiconductors

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    89. Ootuka, Y; Ono, K; Shimada, H; Matsuda, R; Kanda, A
      Electron transport in ferromagnetic small tunnel junctions

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    90. Pearton, SJ; Ren, F; Zhang, AP; Dang, G; Cao, XA; Lee, KP; Cho, H; Gila, BP; Johnson, JW; Monier, C; Abernathy, CR; Han, J; Baca, AG; Chyi, JI; Lee, CM; Nee, TE; Chuo, CC; Chu, SNG
      GaN electronics for high power, high temperature applications

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    91. Maeda, N; Saitoh, T; Tsubaki, K; Nishida, T; Kobayashi, N
      Two-dimensional electron gas transport properties in AlGaN/GaN single- anddouble-heterostructure field effect transistors

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    92. Breitschadel, O; Kley, L; Grabeldinger, H; Hsieh, JT; Kuhn, B; Scholz, F; Schweizer, H
      Short-channel effects in AlGAN/GaN HEMTs

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    93. Pollak, FH
      Contactless electromodulation and surface photovoltage spectroscopy for the nondestructive, room temperature characterization of wafer-seals III-V semiconductor device structures

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    94. Rezazadeh, AA; Khalid, AH; Sotoodeh, M
      Reliability investigation of implanted microwave InGaP/GaAs HBTs

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    95. Cassette, S; Delage, SL; Chartier, E; Floriot, D; Poisson, MA; Garcia, JC; Grattepain, C; Arroyo, JM; Plana, R; Bland, SW
      Hydrogen-related effects in GaInP/GaAs HBTs: incorporation, removal and influence on device reliability

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    96. Lee, JM; Lee, TW; Park, SH; Min, BG; Park, MP; Lee, KH; Choi, IH
      The base contact recombination current and its effect on the current gain of surface-passivated InGaP/GaAs HBTs

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    97. Acosta, M; Ares, O; Sosa, V
      Josephson modulations of critical current above 77 K in YBa2Cu3O7-Au thin film composites grown on LaAlO3

      PHYSICA C
    98. Christou, A
      Charge transport in low-dimensional nitride semiconductor heterostructures

      PHYSICA B
    99. Kawaura, H; Sakamoto, T
      Electrical transport in nano-scale silicon devices

      IEICE TRANSACTIONS ON ELECTRONICS
    100. Takagi, S; Mizuno, T; Sugiyama, N; Tezuka, T; Kurobe, A
      Strained-Si-on-insulator (strained-SOI) MOSFETs - Concept, structures and device characteristics

      IEICE TRANSACTIONS ON ELECTRONICS


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Documento generato il 03/08/20 alle ore 19:20:49