Catalogo Articoli (Spogli Riviste)

HELP
ATTENZIONE: attualmente gli articoli Current Contents (fonte ISI) a partire dall'anno 2002 sono consultabili sulla Risorsa On-Line

Le informazioni sugli articoli di fonte ISI sono coperte da copyright

La ricerca find articoli where soggetti phrase all words 'TRANSISTOR' sort by level,fasc_key/DESCEND, pagina_ini_num/ASCEND ha restituito 2566 riferimenti
Si mostrano 100 riferimenti a partire da 1
Selezionare un intervallo

Per ulteriori informazioni selezionare i riferimenti di interesse.

    1. Samori, C; Zanchi, A; Levantino, S; Lacaita, AL
      A fully-integrated low-power low-noise 2.6-GHz bipolar VCO for wireless applications

      IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS
    2. Remacle, F; Levine, RD
      Quantum dots as chemical building blocks: Elementary theoretical considerations

      CHEMPHYSCHEM
    3. Pepe, GP; Peluso, G; Scaldaferri, R; Parlato, L; Granata, C; Esposito, E; Russo, M
      Whole-wafer fabrication process for three-terminal double stacked tunnel junctions

      EUROPEAN PHYSICAL JOURNAL B
    4. Jiang, JZ; Liu, W; Cheng, KL; Poon, KW; Ng, DKP
      Heteroleptic rare earth double-decker complexes with porphyrinato and 2,3-naphthalocyaninato ligands - Preparation, spectroscopic characterization, and electrochemical studies

      EUROPEAN JOURNAL OF INORGANIC CHEMISTRY
    5. Wurthner, F
      Plastic transistors reach maturity for mass applications in microelectronics

      ANGEWANDTE CHEMIE-INTERNATIONAL EDITION
    6. Weima, JA; Fahrner, WR; Job, R
      Experimental investigation of the parameter dependency of the removal rateof thermochemically polished CVD diamond films

      JOURNAL OF SOLID STATE ELECTROCHEMISTRY
    7. Geyler, VA; Popov, IY
      Quantum interference rectifier

      PHYSICA E
    8. Yacoby, A; Fulton, TA; Hess, HF; Pfeiffer, LN; West, KW
      Compressibility images of the quantum Hall state

      PHYSICA E
    9. Schmid, J; Weis, J; Eberl, K; von Klitzing, K
      Split Kondo resonances in quantum dots at finite magnetic fields

      PHYSICA E
    10. Ferry, DK; Khoury, M; Gerousis, C; Rack, MJ; Gunther, A; Goodnick, SM
      Single-electron charging effects in Si MOS devices

      PHYSICA E
    11. Bauer, GEW; Nazarov, YV; Brataas, A
      Spin-flip transistor

      PHYSICA E
    12. Hasegawa, H; Kasai, S
      Hexagonal binary decision diagram quantum logic circuits using Schottky in-plane and wrap-gate control of GaAs and InGaAs nanowires

      PHYSICA E
    13. Giannazzo, F; Raineri, V; Privitera, V; Priolo, F
      High-resolution scanning capacitance microscopy by angle bevelling

      MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
    14. Takatsuji, H
      Advanced time-of-flight secondary ion mass spectrometry analyses for application to TFT-LCD

      MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
    15. Onuki, J; Chonan, Y; Komiyama, T; Nihei, M; Suwa, M; Kitano, M
      Reliability enhancement of solder joints made by a void free soldering process

      MATERIALS TRANSACTIONS
    16. Chen, LC; Hong, WK; Tarntair, FG; Chen, KJ; Lin, JB; Kichambare, PD; Cheng, HC; Chen, KH
      Field electron emission from C-based emitters and devices

      NEW DIAMOND AND FRONTIER CARBON TECHNOLOGY
    17. Jang, HW; Kim, JK; Jeon, CM; Lee, JL
      Room Temperature Ohmic contact on n-type GaN using plasma treatment

      MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH
    18. Choi, KJ; Lee, JL
      Surface states on n-type Al0.24Ga0.76As characterized by deep-level transient spectroscopy

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    19. Shin, WC; Yang, JH; Choi, KJ; Jeon, YA; Yoon, SG
      Characteristics of Pt/YMnO3/Y2O3/Si structure using a Y2O3 buffer layer grown by pulsed laser deposition

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    20. Lin, R
      A regularly structured parallel multiplier with low-power non-binary-logiccounter circuits

      VLSI DESIGN
    21. Cho, GR; Chen, T
      On mixed PTL/static logic for low-power and high-speed circuits

      VLSI DESIGN
    22. Cheng, EYC; Sahni, S
      A fast algorithm for transistor folding

      VLSI DESIGN
    23. Stoica, A; Zebulum, R; Keymeulen, D; Tawel, R; Daud, T; Thakoor, A
      Reconfigurable VLSI architectures for evolvable hardware: From experimental field programmable transistor arrays to evolution-oriented chips

      IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS
    24. Geiler, VA; Popov, IY
      A quantum loop in magnetic field and a quantum interference rectifier

      TECHNICAL PHYSICS LETTERS
    25. Abramov, II; Korolev, AV
      Device structures based on resonant tunneling diodes: A theoretical consideration

      TECHNICAL PHYSICS
    26. Berman, LS
      Simulation of hysteresis in a metal-ferroelectric-semiconductor structure

      SEMICONDUCTORS
    27. Sobolev, MM; Kochnev, IV; Lantratov, VM; Ledentsov, NN
      Study of electron capture by quantum dots using deep-level transient spectroscopy

      SEMICONDUCTORS
    28. Hyldgaard, P
      Low-temperature control of nanoscale molecular dynamics

      LOW TEMPERATURE PHYSICS
    29. MacLeod, TC; Ho, FD
      I-V characteristics of a ferroelectric field effect transistor

      INTEGRATED FERROELECTRICS
    30. Haneder, TP; Honlein, W; Bachhofer, H; Von Philipsborn, H; Waser, R
      Optimization of Pt/SBT/CeO2/Si(100) gate stacks for low voltage ferroelectric field effect devices

      INTEGRATED FERROELECTRICS
    31. Choi, KJ; Shin, WC; Yoon, SG
      Characteristics of ferroelectric YMnO3 thin films for MFISFET by MOCVD

      INTEGRATED FERROELECTRICS
    32. Liu, XH; Yin, J; Liu, ZG; Wang, L; Li, J; Zhu, XH; Chen, KJ
      Properties of PbZr(x)(T)i(1-x)O(3)/CeO2/SiO2/Si structure

      INTEGRATED FERROELECTRICS
    33. Jun, S; Lee, J
      Strain induced (Ba,Sr)TiO3 thin films for metal-ferroelectric-insulator-semiconductor memory devices

      INTEGRATED FERROELECTRICS
    34. Ullmann, M; Goebel, H; Hoenigschmid, H; Haneder, T
      Disturb free programming scheme for single transistor ferroelectric memoryarrays

      INTEGRATED FERROELECTRICS
    35. You, IK; Lee, WJ; Yang, IS; Yu, BG; Cho, KI; Kim, SH
      Effect of NO(Si3N4/SiO2) layers on the electrical properties of MFISFET using SBT(SrBi2Ta2O9) materials

      INTEGRATED FERROELECTRICS
    36. Gotz, A; Gracia, I; Cane, C; Morrissey, A; Alderman, J
      Manufacturing and packaging of sensors for their integration in a verticalMCM microsystem for biomedical applications

      JOURNAL OF MICROELECTROMECHANICAL SYSTEMS
    37. Leyn, F; Sansen, W; Gielen, GGE
      Analog small-signal modeling - Part II: Elementary transistor stages analyzed with behavioral signal path modeling

      IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-ANALOG AND DIGITAL SIGNAL PROCESSING
    38. Zanchi, A; Samori, C; Lacaita, AL; Levantino, S
      Impact of AAC design on phase noise performance of VCOs

      IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-ANALOG AND DIGITAL SIGNAL PROCESSING
    39. Ogrenci, AS; Dundar, G; Balkir, S
      Fault-tolerant training of neural networks in the presence of MOS transistor mismatches

      IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-ANALOG AND DIGITAL SIGNAL PROCESSING
    40. Rodriguez-Villegas, E; Huertas, G; Avedillo, MJ; Quintana, JM; Rueda, A
      A practical floating-gate Muller-C element using vMOS threshold gates

      IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-ANALOG AND DIGITAL SIGNAL PROCESSING
    41. Alioto, M; Palumbo, G
      Oscillation frequency in CML and ESCL ring oscillators

      IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-FUNDAMENTAL THEORY AND APPLICATIONS
    42. Goldgeisser, LB; Green, MM
      On the topology and number of operating points of MOSFET circuits

      IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-FUNDAMENTAL THEORY AND APPLICATIONS
    43. Ono, N; Okumura, H; Murashima, T
      Synthesis of oligo(thienylenevinylenes) substituted with alkoxy groups

      HETEROATOM CHEMISTRY
    44. Yap, D; Elliott, KR; Brown, YK; Kost, AR; Ponti, ES
      High-speed integrated optoelectronic modulation circuit

      IEEE PHOTONICS TECHNOLOGY LETTERS
    45. Feast, WJ; Goldoni, F; Kilbinger, AFM; Meijer, EW; Petty, MC; Schenning, APHJ
      Synthesis and properties of self organising semiconducting and luminescentpolymers and model compounds

      MACROMOLECULAR SYMPOSIA
    46. Chernyak, L; Cahen, D
      Controlled ion migration tuning of semiconductor electrical properties

      SOFT CHEMISTRY LEADING TO NOVEL MATERIALS
    47. Hou, SM; Tao, CG; Liu, HW; Zhao, XY; Liu, WM; Xue, ZQ
      Study on gold nanoclusters and cold nanowires on the surface of highly oriented pyrolytic graphite

      ACTA PHYSICA SINICA
    48. Gaggero-Sager, LM
      Exchange and correlation via functional of Thomas-Fermi in delta-doped quantum wells

      MODELLING AND SIMULATION IN MATERIALS SCIENCE AND ENGINEERING
    49. Macucci, M; Iannaccone, G; Greer, J; Martorell, J; Sprung, DWL; Schenk, A; Yakimenko, II; Berggren, KF; Stokbro, K; Gippius, N
      Status and perspectives of nanoscale device modelling

      NANOTECHNOLOGY
    50. Parker, AJ; Childs, PA; Palmer, RE; Brust, M
      Interaction of passivated clusters in solution with micro-patterned surfaces: guided flow versus defect pinning

      NANOTECHNOLOGY
    51. Martinoia, S; Rosso, N; Grattarola, M; Lorenzelli, L; Margesin, B; Zen, M
      Development of ISFET array-based microsystems for bioelectrochemical measurements of cell populations

      BIOSENSORS & BIOELECTRONICS
    52. Ingebrandt, S; Yeung, CK; Krause, M; Offenhausser, A
      Cardiomyocyte-transistor-hybrids for sensor application

      BIOSENSORS & BIOELECTRONICS
    53. Bing, D; Lei, XL
      Kondo-type transport through a quantum dot: a new finite-U slave-boson mean-field approach

      JOURNAL OF PHYSICS-CONDENSED MATTER
    54. Xing, H; Keller, S; Wu, YF; McCarthy, L; Smorchkova, IP; Buttari, D; Coffie, R; Green, DS; Parish, G; Heikman, S; Shen, L; Zhang, N; Xu, JJ; Keller, BP; DenBaars, SP; Mishra, UK
      Gallium nitride based transistors

      JOURNAL OF PHYSICS-CONDENSED MATTER
    55. Ozturk, E; Ergun, Y; Sari, H; Sokmen, I
      The self-consistent calculation of Si delta-doped GaAs structures

      APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
    56. Hillebrandt, H; Abdelghani, A; Abdelghani-Jacquin, C; Aepfelbacher, M; Sackmann, E
      Electrical and optical characterization of thrombin-induced permeability of cultured endothelial cell monolayers on semiconductor electrode arrays

      APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
    57. Jiang, JZ; Bian, YZ; Furuya, F; Liu, W; Choi, MTM; Kobayashi, N; Li, HW; Yang, QC; Mak, TCW; Ng, DKP
      Synthesis, structure, spectroscopic properties, and electrochemistry of rare earth sandwich compounds with mixed 2,3-naphthalocyaninato and octaethylporphyrinato ligands

      CHEMISTRY-A EUROPEAN JOURNAL
    58. Lahav, M; Kharitonov, AB; Willner, I
      Imprinting of chiral molecular recognition sites in thin TiO2 films associated with field-effect transistors: Novel functionalized devices for chiroselective and chirospecific analyses

      CHEMISTRY-A EUROPEAN JOURNAL
    59. Ulbrich, M; Fromherz, P
      Neuron-silicon self-excitation: A prototype of iono-electronics

      ADVANCED MATERIALS
    60. Berven, CA; Clarke, L; Mooster, JL; Wybourne, MN; Hutchison, JE
      Defect-tolerant single-electron charging at room temperature in metal nanoparticle decorated biopolymers

      ADVANCED MATERIALS
    61. Pardo-Yissar, V; Gabai, R; Shipway, AN; Bourenko, T; Willner, I
      Gold nanoparticle/hydrogel composites with solvent-switchable electronic properties

      ADVANCED MATERIALS
    62. Luscher, S; Held, R; Fuhrer, A; Heinzel, T; Ensslin, K; Bichler, M; Wegscheider, W
      Electronic properties of AFM-defined semiconductor nanostructures

      MATERIALS SCIENCE & ENGINEERING C-BIOMIMETIC AND SUPRAMOLECULAR SYSTEMS
    63. Seelmann-Eggebert, M; Meisen, P; Schaudel, F; Koidl, P; Vescan, A; Leier, H
      Heat-spreading diamond films for GaN-based high-power transistor devices

      DIAMOND AND RELATED MATERIALS
    64. Liu, YQ; Hu, WP; Qiu, WF; Xu, Y; Zhou, SQ; Zhu, DB
      Organic field-effect transistors based on Langmuir-Blodgett films of substituted phthalocyanines

      SENSORS AND ACTUATORS B-CHEMICAL
    65. Filippini, D; Weiss, T; Aragon, R; Weimar, U
      New NO2 sensor based on Au gate field effect devices

      SENSORS AND ACTUATORS B-CHEMICAL
    66. Temple-Boyer, P; Launay, J; Hajji, B; Sarrabayrouse, G; Martinez, A
      Study of capacitive structures for amplifying the sensitivity of FET-basedchemical sensors

      SENSORS AND ACTUATORS B-CHEMICAL
    67. Yin, LT; Chou, JC; Chung, WY; Sun, TP; Hsiung, KP; Hsiung, SK
      Glucose ENFET doped with MnO2 powder

      SENSORS AND ACTUATORS B-CHEMICAL
    68. Kharitonov, AB; Zayats, M; Alfonta, L; Katz, E; Willner, I
      A novel ISFET-based NAD(+)-dependent enzyme sensor for lactate

      SENSORS AND ACTUATORS B-CHEMICAL
    69. Chin, YL; Chou, JC; Sun, TP; Chung, WY; Hsiung, SK
      A novel pH sensitive ISFET with on chip temperature sensing using CMOS standard process

      SENSORS AND ACTUATORS B-CHEMICAL
    70. Chin, YL; Chou, JC; Sun, TP; Liao, HK; Chung, WY; Hsiung, SK
      A novel SnO2/Al discrete gate ISFET pH sensor with CMOS standard process

      SENSORS AND ACTUATORS B-CHEMICAL
    71. Bouvet, M; Guillaud, G; Leroy, A; Maillard, A; Spirkovitch, S; Tournilhac, FG
      Phthalocyanine-based field-effect transistor as ozone sensor

      SENSORS AND ACTUATORS B-CHEMICAL
    72. Puig-Lleixa, C; Jimenez, C; Bartroli, J
      Acrylated polyurethane - photopolymeric membrane for amperometric glucose biosensor construction

      SENSORS AND ACTUATORS B-CHEMICAL
    73. Ni, WX; Du, CX; Duteil, F; Elfving, A; Hansson, GV
      1.54 mu m Light emitting devices based on Er/O-doped Si layered structuresgrown by molecular beam epitaxy

      OPTICAL MATERIALS
    74. Bouzaiene, L; Sfaxi, L; Sghaeir, H; Maaref, H; Cavanna, A; Jouault, B; Contreras, S; Konczewicz, L
      A novel selectively delta-doped AlGaAs/(In,Ga,As)/GaAs pseudomorphic heterostructure

      OPTICAL MATERIALS
    75. Osa, JI; Carlosena, A
      Limitations of the MOS resistive circuit in MOSFET-C implementation: Bandwidth, noise, offset and non-linearity

      ANALOG INTEGRATED CIRCUITS AND SIGNAL PROCESSING
    76. Fruett, F; Meijer, GCM
      A new sensor structure using the piezojunction effect in PNP lateral transistors

      SENSORS AND ACTUATORS A-PHYSICAL
    77. Kim, SD; van't Erve, OMJ; Jansen, R; Kumar, PSA; Vlutters, R; Lodder, JC
      Fabrication technology for miniaturization of the spin-valve transistor

      SENSORS AND ACTUATORS A-PHYSICAL
    78. van't Erve, OMJ; Kumar, PSA; Jansen, R; Kim, SD; Vlutters, R; Lodder, JC; Smits, AA; de Jonge, WJM
      Noise properties of the spin-valve transistor

      SENSORS AND ACTUATORS A-PHYSICAL
    79. Weinert, A; Andersson, GI
      High resolution resonant double gate transistor for oscillating structures

      SENSORS AND ACTUATORS A-PHYSICAL
    80. Osten, HJ; Knoll, D; Rucker, H
      Dopant diffusion control by adding carbon into Si and SiGe: principles anddevice application

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    81. Lahbabi, M; Jorio, M; Ahaitouf, A; Fliyou, M; Abarkan, E
      Temperature effect on electroluminescence spectra of silicon p-n junctionsunder avalanche breakdown condition

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    82. Goldhaber-Gordon, D; Gores, J; Shtrikman, H; Mahalu, D; Meirav, U; Kastner, MA
      The Kondo effect in a single-electron transistor

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    83. Wingreen, NS
      The Kondo effect in novel systems

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    84. Ootuka, Y; Ono, K; Shimada, H; Matsuda, R; Kanda, A
      Electron transport in ferromagnetic small tunnel junctions

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    85. Mitani, S; Takanashi, K; Yakushiji, K; Chiba, J; Fujimori, H
      Study on spin dependent tunneling and Coulomb blockade in granular systemswith restricted tunneling paths

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    86. Du, CX; Duteil, F; Hansson, GV; Ni, WX
      Efficient 1.54 mu m light emission from Si/SiGe/Si : Er : O transistors prepared by differential MBE

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    87. Mosca, R; Franchi, S; Frigeri, P; Gombia, E; Carnera, A; Peroni, M
      Influence of the As/Ga flux ratio on diffusion of Be in MBE GaAs layers

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    88. Pollak, FH
      Contactless electromodulation and surface photovoltage spectroscopy for the nondestructive, room temperature characterization of wafer-seals III-V semiconductor device structures

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    89. Melkadze, R; Khuchua, N; Tchakhnakia, Z; Makalatia, T; Didebashvili, GD; Peradze, G; Khelashvili, T; Ksaverieva, M
      Investigation of MBE grows GaAs/AlGaAs/InGaAs heterostructures

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    90. Moriarty, GR; Murtagh, M; Cherkaoui, K; Gouez, G; Kelly, PV; Crean, GM; Bland, SW
      Annealing study of InGaP/GaAs heterojunction bipolar transistor and carbon-doped p(+)GaAs base layers

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    91. Kim, SJ; Latyshev, YI; Yamashita, T; Kishida, S
      New approach for fabricating submicron scale intrinsic Josephson, junctions using high-T-c superconducting materials

      PHYSICA C
    92. Kutchinsky, J; Taboryski, R; Sorensen, CB; Hansen, JB; Lindelof, PE
      Experimental investigation of supercurrent enhancement in S-N-S junctions by non-equilibrium injection into supercurrent-carrying bound Andreev states

      PHYSICA C
    93. Starmark, B; Hurfeld, E; Henning, T; Delsing, P; Korotkov, AN; Shaikhaidarov, RS; Akazaki, T; Toyoda, E; Takayanagi, H
      Noise in the single electron transistor and controlled Josephson current in ballistic three terminal devices

      PHYSICA C
    94. Schon, G; Makhlin, Y; Shnirman, A
      Reading-out the state of a qubit: an analysis of the quantum measurement process

      PHYSICA C
    95. Makhlin, Y; Schon, G; Shnirman, A
      Nanoscale superconducting quantum bits

      PHYSICA C
    96. Hamilton, AR; Simmons, MY; Pepper, M; Linfield, EH; Ritchie, DA
      Localisation and the metal-insulator transition in two dimensions

      PHYSICA B
    97. Ono, Y; Yamazaki, K; Takahashi, Y
      Si single-electron transistors with high voltage gain

      IEICE TRANSACTIONS ON ELECTRONICS
    98. Saitoh, M; Hiramoto, T
      Effects of discrete quantum levels on electron transport in silicon single-electron transistors with an ultra-small quantum dot

      IEICE TRANSACTIONS ON ELECTRONICS
    99. Alsunaidi, MA; Kuwayama, T; Kawasaki, S
      Numerical characterization of optically controlled MESFETs using an energy-dependent physical simulation model

      IEICE TRANSACTIONS ON ELECTRONICS
    100. Kamigaki, Y; Minami, S
      MNOS nonvolatile semiconductor memory technology: Present and future

      IEICE TRANSACTIONS ON ELECTRONICS


ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 26/05/20 alle ore 23:48:01