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La ricerca find articoli where soggetti phrase all words 'TISI2' sort by level,fasc_key/DESCEND, pagina_ini_num/ASCEND ha restituito 326 riferimenti
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    1. Chen, LJ; Cheng, SL; Chang, SM; Huang, HY
      Auto-correlation function analysis of amorphous interlayers in Ti/Si systems

      MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
    2. Inui, H; Hashimoto, T; Tanaka, K; Tanaka, I; Mizoguchi, T; Adachi, H; Yamaguchi, M
      Defect and electronic structures in TiSi2 thin films produced by co-sputtering part 1: Defect analysis by transmission electron microscopy

      ACTA MATERIALIA
    3. Kim, SD; Park, HC; Hwang, IS; Rhee, JK; Park, DG
      Effects of titanium sputtering schemes and preamorphization on the junction characteristics of Ti salicide

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    4. Kim, TK; Jang, SA; Yeo, IS; Yang, JM; Park, TS; Park, JW
      Oxidation behavior of a patterned TiSi2/polysilicon stack

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    5. Mollat, M; Demkov, AA; Fejes, P; Werho, D
      Stable titanium silicide formation on field oxide after BF2 ion implantation

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    6. Mitsui, T; Hill, E; Curtis, R; Ganz, E
      Adsorption of TPCl4 and initial stages of Ti growth on Si(001)

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
    7. Yoon, DS; Baik, HK; Lee, SM; Roh, JS
      Amorphous Ta-nanocrystalline RuOx diffusion barrier for lower electrode ofhigh density memory devices

      JOURNAL OF ELECTRONIC MATERIALS
    8. Umapathi, B; Das, S; Lahiri, SK; Kal, S
      Solid phase reaction of Ti with Si-Ge layers prepared by Ge-implantation

      JOURNAL OF ELECTRONIC MATERIALS
    9. Yanagawa, T; Nagai, H; Ishii, K; Matsumoto, S
      Initial growth of titanium germanosilicide on Ge/Si(111)

      APPLIED SURFACE SCIENCE
    10. Miglio, L; Iannuzzi, M; Raiteri, P; Celino, M
      Silicon diffusion in competitive TiSi2 phases by molecular dynamics simulations

      MICROELECTRONIC ENGINEERING
    11. Stark, T; Gutowski, L; Herden, M; Grunleitner, H; Kohler, S; Hundhausen, M; Ley, L
      Ti-silicide formation during isochronal annealing followed by in situ ellipsometry

      MICROELECTRONIC ENGINEERING
    12. Privitera, S; Quilici, S; La Via, F; Spinella, C; Meinardi, F; Rimini, E
      Kinetics of the C49-C54 transformation by micro-Raman imaging

      MICROELECTRONIC ENGINEERING
    13. Chenevier, B; Chaix-Pluchery, O; Matko, I; Madar, R; La Via, F
      Structural investigations of the C49-C54 transformation in TiSi2 thin films

      MICROELECTRONIC ENGINEERING
    14. Liu, B; Liu, CZ; Cheng, DJ; He, R; Yang, SZ
      Pulsed high energy density plasma processing silicon surface

      THIN SOLID FILMS
    15. Benouattas, N; Halimi, R; Bouabellou, A; Mosser, A
      Effect of implanted phosphorus on silicide formation in the Cr/Si(111) system

      THIN SOLID FILMS
    16. Perez, P
      Oxidation behavior of Al-alloyed ZrSi2

      OXIDATION OF METALS
    17. Larciprete, R; Danailov, M; Barinov, A; Gregoratti, L; Kiskinova, M
      Thermal and pulsed laser induced surface reactions in Ti/Si(001) interfaces studied by spectromicroscopy with synchrotron radiation

      JOURNAL OF APPLIED PHYSICS
    18. Chang, SM; Cheng, SL; Chen, LJ; Luo, CH
      Mechanisms for the improved stability of C54-TiSi2 on (001)Si by the addition of N-2 to Ar during Ti sputtering

      JOURNAL OF APPLIED PHYSICS
    19. Hul'ko, OV; Boukherroub, R; Lopinski, GP
      Chemical and thermal stability of titanium disilicide contacts on silicon

      JOURNAL OF APPLIED PHYSICS
    20. d'Heurle, FM; Zhang, SL; Lavoie, C; Gas, P; Cabral, C; Harper, JME
      Formation of C54TiSi(2): Effects of niobium additions on the apparent activation energy

      JOURNAL OF APPLIED PHYSICS
    21. Quintero, A; Libera, M; Cabral, C; Lavoie, C; Harper, JME
      Two-step codeposition process for enhanced C54-TiSi2 formation in the Ti-Si binary system

      JOURNAL OF APPLIED PHYSICS
    22. Kamins, TI; Williams, RS; Basile, DP; Hesjedal, T; Harris, JS
      Ti-catalyzed Si nanowires by chemical vapor deposition: Microscopy and growth mechanisms

      JOURNAL OF APPLIED PHYSICS
    23. Cocchi, R; Giubertoni, D; Ottaviani, G; Marangon, T; Mastracchio, G; Queirolo, G; Sabbadini, A
      Initial reactions in Ti-Si bilayers: New indications from in situ measurements

      JOURNAL OF APPLIED PHYSICS
    24. Litwin, A
      Overlooked interfacial silicide-polysilicon gate resistance in MOS transistors

      IEEE TRANSACTIONS ON ELECTRON DEVICES
    25. Lee, JW; Lin, SX; Lei, TF; Lee, CL
      Improvements in both thermal stability of Ni-silicide and electrical reliability of gate oxides using a stacked polysilicon gate structure

      JOURNAL OF THE ELECTROCHEMICAL SOCIETY
    26. Kim, SD; Hwang, IS; Rhee, JK; Suh, YS; Park, DG
      Effects of the process variable on sputtered TiSix polycide gate electrodes for sub-0.15 mm memory device application

      JOURNAL OF THE ELECTROCHEMICAL SOCIETY
    27. Chen, SY; Shen, ZX; See, AK; Chan, LH
      Enhancement effect of C40TiSi(2) on the C54 phase formation

      JOURNAL OF THE ELECTROCHEMICAL SOCIETY
    28. Li, S; Lee, YK; Zhang, L; Gao, W; Lee, KS
      Effective enhancement of C54TiSi(2) phase formation with multi-thermal-shock processing at 600 degrees C

      APPLIED PHYSICS LETTERS
    29. Chenevier, B; Chaix-Pluchery, O; Matko, I; Senateur, JP; Madar, R; La Via, F
      In situ investigations of the metal/silicon reaction in Ti/Si thin films capped with TiN: Volumetric analysis of the C49-C54 transformation

      APPLIED PHYSICS LETTERS
    30. Verma, G; Talwar, S; Bravman, JC
      Creating process margin in laser thermal processing: Application to formation of titanium silicide

      APPLIED PHYSICS LETTERS
    31. La Via, F; Grimaldi, MG; Migas, DB; Miglio, L
      Defect-induced tetragonalization of the orthorhombic TiSi(2)C49 phase: X-ray diffraction and first principles calculations

      APPLIED PHYSICS LETTERS
    32. Li, K; Chen, SY; Shen, ZX
      Identification of refractory-metal-free C40TiSi(2) for low temperature C54TiSi(2) formation

      APPLIED PHYSICS LETTERS
    33. Bae, JU; Sohn, DK; Park, JS; Han, CH; Park, JW; Kim, YC; Kim, JJ
      A study on thermal stability of CoSi2 employing novel fine-grained polycrystalline silicon/CoSi2/Si (001) system

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    34. Pey, KL; Chua, HN; Siah, SY
      Effect of BF2+ implantation on void formation in Ti-salicided narrow polysilicon lines

      ELECTROCHEMICAL AND SOLID STATE LETTERS
    35. Wang, PL; Yin, JH; Sheng, WB; Zheng, YF; Zhao, LC; Xu, DM
      Effect of deposition and treatment conditions on growth of nanometer PtSi heterostructure

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    36. Palasantzas, G; De Hosson, JTM
      Fractality aspects during agglomeration of solid-phase-epitaxy Co-silicidethin films

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    37. Smith, PM; Bailey, G; Hu, YZ; Tay, SP
      Effect of ramp rate on the C49 to C54 titanium disilicide phase transformation from Ti and Ti(Ta)

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    38. Wiederhold, KP; Yamaguchi, Y; Ayala, A; Matheaus, M; Gutierrez, CJ; Galloway, HC
      Ti/TiN coatings for microfabricated cantilevers used in atomic force microscopy

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    39. Pelleg, J
      Schottky barrier formation at Cu/TiB2/TiSi2/Si interface

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    40. Perez, P; Lopez, MF; Jimenez, JA; Adeva, P
      Oxidation behaviour of Al-alloyed ZrSi2 at 700 degrees C

      INTERMETALLICS
    41. Li, JL; Jiang, DL; Tan, SH
      Microstructure and mechanical properties of in situ produced SiC/TiSi2 nanocomposites

      JOURNAL OF THE EUROPEAN CERAMIC SOCIETY
    42. Pey, KL; Sundaresan, R; Wong, H; Siah, SY; Tung, CH
      Void formation in titanium desilicide/p(+) silicon interface: impact on junction leakage and silicide sheet resistance

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    43. Verma, G; Talwar, S; Bravman, JC
      Differential thermal budget in laser processing: Application to formation of titanium silicide

      IEEE ELECTRON DEVICE LETTERS
    44. Pelleg, J; Rubinovich, L
      A conductance model (approach) for kinetic studies: The Ti-Ta-Si system

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
    45. Cheng, LW; Cheng, SL; Chen, LJ; Chien, HC; Lee, HL; Pan, FM
      Formation of Ni silicides on (001)Si with a thin interposing Pt layer

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
    46. Huang, JC; Luo, JS; Lin, WT; Chang, CY; Shih, PS
      Effects of an interposed Mo layer on the interfacial reactions of Ti/Si0.76Ge0.24 by rapid thermal annealing and pulsed laser annealing

      SEMICONDUCTOR SCIENCE AND TECHNOLOGY
    47. Veprek, S; Niederhofer, A; Moto, K; Bolom, T; Mannling, HD; Nesladek, P; Dollinger, G; Bergmaier, A
      Composition, nanostructure and origin of the ultrahardness in nc-TiN/a-Si3N4/a- and nc-TiSi2 nanocomposites with H-v=80 to <= 105 GPa

      SURFACE & COATINGS TECHNOLOGY
    48. Kittl, JA; Shiau, WT; Hong, QZ; Miles, D
      Salicides: materials, scaling and manufacturability issues for future integrated circuits - (invited)

      MICROELECTRONIC ENGINEERING
    49. Lauwers, A; Besser, P; Gutt, T; Satta, A; de Potter, M; Lindsay, R; Roelandts, N; Loosen, F; Jin, S; Bender, H; Stucchi, M; Vrancken, C; Deweerdt, B; Maex, K
      Comparative study of Ni-silicide and Co-silicide for sub 0.25-mu m technologies

      MICROELECTRONIC ENGINEERING
    50. Gerritsen, E; Basso, MT; Baylac, B
      Pre-alloying implants with indium as an enabling technology to extend titanium salicide towards 0.1-mu m linewidths

      MICROELECTRONIC ENGINEERING
    51. La Via, F; Privitera, S; Grimaldi, MG; Rimini, E; Quilici, S; Meinardi, F
      Determination of C54 nucleation site density in narrow stripes by sheet resistance measurements and mu-Raman spectroscopy

      MICROELECTRONIC ENGINEERING
    52. Ottaviani, G; Tonini, R; Giubertoni, D; Sabbadini, A; Marangon, T; Queirolo, G; La Via, F
      Investigation of C49-C54TiSi(2) transformation kinetics

      MICROELECTRONIC ENGINEERING
    53. Iannuzzi, R; Celino, M; Miglio, L
      Molecular dynamics characterization of crystalline and amorphous TiSi2 phases

      MICROELECTRONIC ENGINEERING
    54. Beddies, G; Hortenbach, H; Falke, M; Brauer, J; Sarkar, DK; Teichert, S; Hinneberg, HJ
      Plasma etching of ternary silicide top layers

      MICROELECTRONIC ENGINEERING
    55. Iannuzzi, M; Miglio, L; Celino, M
      Structural and thermoelastic properties of crystalline and amorphous TiSi2phases by tight-binding molecular dynamics

      PHYSICAL REVIEW B
    56. Harper, JME; Cabral, C; Lavoie, C
      Mechanisms for enhanced formation of the C54 phase of titanium silicide ultra-large-scale integration contacts

      ANNUAL REVIEW OF MATERIALS SCIENCE
    57. Ezoe, K; Yamamoto, T; Ishii, K; Matsumoto, S
      The effect of elevated silicon substrate temperature on TiSi2 formatio from a Ti film

      THIN SOLID FILMS
    58. Pons, M; Bernard, C; Branquet, E; Madar, R
      Combined thermodynamic and mass transport modeling for material processingfrom the vapor phase

      THIN SOLID FILMS
    59. Tsai, CJ; Chung, PL; Yu, KH
      Stress evolution of Ni/Pd/Si reaction system under isochronal annealing

      THIN SOLID FILMS
    60. Briggs, GAD; Basile, DP; Medeiros-Ribeiro, G; Kamins, TI; Ohlberg, DAA; Williams, RS
      The incommensurate nature of epitaxial titanium disilicide islands on Si(001)

      SURFACE SCIENCE
    61. Gan, CL; Pey, KL; Chim, WK; Siah, SY
      Effects of high current conduction in sub-micron Ti-silicided films

      SOLID-STATE ELECTRONICS
    62. Privitera, S; La Via, F; Spinella, C; Quilici, S; Borghesi, A; Meinardi, F; Grimaldi, MG; Rimini, E
      Nucleation and growth of C54 grains into C49TiSi(2) thin films monitored by micro-Raman imaging

      JOURNAL OF APPLIED PHYSICS
    63. Park, JS; Sohn, DK; Bae, JU; Han, CH; Park, JW
      The effect of Co incorporation on electrical characteristics of n(+)/p shallow junction formed by dopant implantation into CoSi2 and anneal

      IEEE TRANSACTIONS ON ELECTRON DEVICES
    64. DiGregorio, JE; Wall, RN
      Small area versus narrow line width effects on the C49 to C54 transformation of TiSi2

      IEEE TRANSACTIONS ON ELECTRON DEVICES
    65. Bae, JU; Sohn, DK; Park, JS; Han, CH; Park, JW
      Formation of CoSi2 on various polycrystalline silicon structures and its effects on thermal stability

      JOURNAL OF THE ELECTROCHEMICAL SOCIETY
    66. Sohn, DK; Park, JS; Park, JW
      Effects of Ti-capping on formation and stability of Co silicide I. Solid phase reaction of Ti to Co/Si system

      JOURNAL OF THE ELECTROCHEMICAL SOCIETY
    67. Chen, SY; Shen, ZX; Li, K; See, AK; Chan, LH
      Synthesis and characterization of pure C40TiSi(2)

      APPLIED PHYSICS LETTERS
    68. Suh, D; Kim, HS; Kang, JY
      Effect of interfacial silicon on the structural stability of C54-TiSi2 on SiO2

      APPLIED PHYSICS LETTERS
    69. Zhang, SL; d'Heurle, FM
      Influence of molybdenum on the formation of C54TiSi(2): Template phenomenon versus grain-size effect

      APPLIED PHYSICS LETTERS
    70. Kim, HS; Jang, SA; Kim, TK; Yeo, IS; Lee, SK
      Silicidation on chemical mechanical polished electrode process for metal-silicide/polysilicon gate application

      ELECTROCHEMICAL AND SOLID STATE LETTERS
    71. Meijer, PM; Roelofs, MEF; Manders, BS
      Selective plasma etching for contact holes using a fluorine-based chemistry with addition of N-2

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    72. Maa, JS; Howard, DJ; He, SS; Tweet, DJ; Stecker, L; Stecker, G; Hsu, ST
      Selectivity to silicon nitride in chemical vapor deposition of titanium silicide

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    73. Umapathi, B; Lahiri, SK; Kal, S
      Characterization of titanium polycide films by atomic force microscope

      JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
    74. Kwon, Y; Lee, C
      Silicidation behaviors of Co/Ti and Co/Hf bilayers on doped polycrystalline Si substrate

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    75. Cheng, SL; Jou, JJ; Chen, LJ; Tsui, BY
      Formation of C54-TiS2 in titanium on nitrogen-ion-implanted (001)Si with athin interposing Mo layer

      JOURNAL OF MATERIALS RESEARCH
    76. Quintero, A; Libera, M; Cabral, C; Lavoie, C; Harper, JME
      Mechanisms for enhanced C54-TiSi2 formation in Ti-Ta alloy films on single-crystal Si

      JOURNAL OF MATERIALS RESEARCH
    77. Cha, TH; Yoon, SH; Lee, DK; Ryu, H; Lee, HJ; Kim, CS; Jeon, HT
      Study on the transition temperature and phase formation sequence in TiZr silicides on Si(100)

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
    78. Jung, B; Kim, YD; Jeon, H; Yang, W; Nemanich, RJ
      Reduction of the transition temperature of C54TiSi(2) through a Ta interlayer

      JOURNAL OF THE KOREAN PHYSICAL SOCIETY
    79. Park, SG; Jeon, H
      The formation of CoSi2 thin layer on crystalline and amorphous Si substrates using CoZr alloy layer

      JOURNAL OF THE KOREAN PHYSICAL SOCIETY
    80. Ohmi, S; Tung, RT
      Silicide formation in co-deposited TiSix layers: The effect of deposition temperature and Mo

      JOURNAL OF ELECTRONIC MATERIALS
    81. Kal, S; Umapathi, B
      Characterization of thin titanium silicide films prepared by PASET and a conventional process

      SEMICONDUCTOR SCIENCE AND TECHNOLOGY
    82. Pierson, JF; Belmonte, T; Michel, H
      Low temperature growth mechanism of zirconium diboride films synthesised in flowing microwave Ar-BCl3 post-discharges

      SURFACE & COATINGS TECHNOLOGY
    83. Chen, LJ; Cheng, SL; Chang, SM
      Enhanced formation of low-resistivity TiSi2 contacts for deep submicron devices

      BULLETIN OF MATERIALS SCIENCE
    84. Peng, YC; Chen, LJ; Hsieh, WY; Yang, YR; Hsieh, YF
      Enhancement of C-49 to C-54 TiSi2 phase transformation on (001)Si with an ultrathin TiN seed layer

      APPLIED SURFACE SCIENCE
    85. Beddies, G; Falke, M; Teichert, S; Gebhardt, B; Hinneberg, HJ
      Reactive ion etching of CoSi2 in a CF4/Ar plasma

      APPLIED SURFACE SCIENCE
    86. Lindner, JKN; Baba, K; Hatada, R; Stritzker, B
      Phase formation in silicon carbide, silicon, and glassy carbon after high-dose titanium implantation using a MEVVA ion source

      NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
    87. Mouroux, A; Epicier, T; Zhang, SL; Pinard, P
      Microscopic evidence of C40 and C54 in (Ti,Ta)Si-2: Template mechanism

      PHYSICAL REVIEW B-CONDENSED MATTER
    88. Chen, SY; Shen, ZX; Chen, ZD; See, AK; Chan, LH; Zhang, TJ; Tee, KC
      Laser-induced formation of titanium silicides

      SURFACE AND INTERFACE ANALYSIS
    89. Cheng, LW; Cheng, SL; Chen, JY; Chen, LJ; Tsui, BY
      Effects of nitrogen ion implantation on the formation of nickel silicide contacts on shallow junctions

      THIN SOLID FILMS
    90. Tsai, CJ; Yu, KH
      Stress evolution during isochronal annealing of Ni/Si system

      THIN SOLID FILMS
    91. Kim, D; Jeon, H
      The growth of CoSi2 using a Co Zr bilayer on different Si substrates

      THIN SOLID FILMS
    92. Medeiros-Ribeiro, G; Ohlberg, DAA; Bowler, DR; Tanner, RE; Briggs, GAD; Williams, RS
      Titanium disilicide nanostructures: two phases and their surfaces

      SURFACE SCIENCE
    93. Kittl, JA; Shiau, WT; Miles, D; Violette, KE; Hu, JC; Hong, QZ
      Salicides and alternative technologies for future ICs: Part 2

      SOLID STATE TECHNOLOGY
    94. Kittl, JA; Shiau, WT; Miles, D; Violette, KE; Hu, JC; Hong, QZ
      Salicides and alternative technologies for future ICs: Part 1

      SOLID STATE TECHNOLOGY
    95. Alberti, A; La Via, F; Grimaldi, M; Ravesi, S
      Cobalt silicide thermal stability: from blanket thin film to submicrometerlines

      SOLID-STATE ELECTRONICS
    96. Mangelinck, D; Cardenas, J; d'Heurle, FM; Svensson, BG; Gas, P
      Solid solubility of As in CoSi2 and redistribution at the CoSi2/Si interface

      JOURNAL OF APPLIED PHYSICS
    97. Santucci, S; Phani, AR; De Biase, M; Alfonsetti, R; Moccia, G; Terracciano, A; Missori, M
      Thickness dependence of C-54TiSi(2) phase formation in TiN/Ti/Si(100) thinfilm structures annealed in nitrogen ambient

      JOURNAL OF APPLIED PHYSICS
    98. Ohmi, S; Tung, RT
      Effect of ultrathin Mo and MoSix layer on Ti silicide reaction

      JOURNAL OF APPLIED PHYSICS
    99. Alberti, A; La Via, F; Raineri, V; Rimini, E
      Thermal stability of cobalt silicide stripes on Si (001)

      JOURNAL OF APPLIED PHYSICS
    100. Gribelyuk, MA; Kittl, JA; Samavedam, SB
      Effect of Mo doping on accelerated growth of C-54TiSi(2): Evidence for template mechanism

      JOURNAL OF APPLIED PHYSICS


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Documento generato il 11/08/20 alle ore 17:24:07