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- Alferov, ZI

The double heterostructure: The concept and its applications in physics, electronics, and technology (Nobel lecture)*CHEMPHYSCHEM*

- Flatte, ME; Olesberg, JT; Grein, CH

Theoretical comparison of mid-wavelength infrared and long-wavelength infrared lasers*PHILOSOPHICAL TRANSACTIONS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL PHYSICAL AND ENGINEERING SCIENCES*

- Yoon, J; Zory, P; Menna, R; Lee, H; Capewell, D

Pulsed anodization etching for the fabrication of ridge-waveguide structures in mid-infrared InGaAsSb quantum well laser material*ELECTROCHEMICAL AND SOLID STATE LETTERS*

- Eliseev, PG; Li, H; Liu, GT; Stintz, A; Newell, TC; Lester, LF; Malloy, KJ

Ground-state emission and gain in ultralow-threshold InAs-InGaAs quantum-dot lasers*IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS*

- Strassburg, M; Schulz, O; Pohl, UW; Bimberg, D; Itoh, S; Nakano, K; Ishibashi, A; Klude, M; Hommel, D

A novel approach for improved green-emitting II-VI lasers*IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS*

- Asryan, LV; Suris, RA

Carrier photoexcitation from levels in quantum dots to states of the continuum in lasing*SEMICONDUCTORS*

- Chang, CA; Hwang, FC; Wu, ZR; Wang, PY

Oscillatory characteristic temperature of InAs quantum-dot laser*IEEE PHOTONICS TECHNOLOGY LETTERS*

- Linnik, M; Christou, A

Optimization of III-V compound semiconductor heterostructures for distributed Bragg reflector applications in VCSELs*MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY*

- Higashi, T; Yamamoto, T; Ishikawa, T; Fujii, T; Soda, H; Yamada, M

Temperature dependence of gain characteristics in 1.3-mu m AlGaInAs/InP strained multiple-quantum-well semiconductor lasers*IEICE TRANSACTIONS ON ELECTRONICS*

- Higashi, T; Yamamoto, T; Ishikawa, T; Fujii, T; Soda, H; Yamada, M

Temperature dependence of gain characteristics in 1.3-mu m AlGaInAs/InP strained multiple-quantum-well semiconductor lasers*IEICE TRANSACTIONS ON COMMUNICATIONS*

- Burov, LI; Gribkovskii, VP; Grigelevich, PS; Kramar, MI; Ryabtsev, GI; Shore, KA; Voitikov, SV; Kragler, R

Theoretical analysis of the effect of amplified luminescence on the modulation response of laser diodes*INTERNATIONAL JOURNAL OF NUMERICAL MODELLING-ELECTRONIC NETWORKS DEVICES AND FIELDS*

- Bimberg, D; Grundmann, M; Ledentsov, NN; Mao, MH; Ribbat, C; Sellin, R; Ustinov, VM; Zhukov, AE; Alferov, ZI; Lott, JA

Novel infrared quantum dot lasers: Theory and reality*PHYSICA STATUS SOLIDI B-BASIC RESEARCH*

- Groom, KM; Ashmore, AD; Mowbray, DJ; Skolnick, MS; Hopkinson, M; Hill, G; Clark, J; Smowton, PM

Optical spectroscopic study of carrier processes in self-assembled In(Ga)As-Ga(Al)As quantum dot lasers*PHYSICA STATUS SOLIDI B-BASIC RESEARCH*

- Ma, CS; Wang, LJ; Liu, SY

Band structures and characteristics of InGaAs/InGaAsP strain-compensated quantum well lasers*OPTICAL AND QUANTUM ELECTRONICS*

- Sivaramakrishnan, S; Oliver, DL

Distinct K currents result in physiologically distinct cell types in the inferior colliculus of the rat*JOURNAL OF NEUROSCIENCE*

- Schneider, HC; Chow, WW; Koch, SW

Many-body effects in the gain spectra of highly excited quantum-dot lasers- art. no. 115315*PHYSICAL REVIEW B*

- Ma, CS; Wang, LJ; Liu, SY

Threshold characteristics of 1.55-mu m InGaAs/InGaAsP strain-compensated quantum well lasers with zero net strain*OPTICAL ENGINEERING*

- Alferov, ZI

Nobel Lecture: The double heterostructure concept and its applications in physics, electronics, and technology*REVIEWS OF MODERN PHYSICS*

- Krestnikov, IL; Ledentsov, NN; Hoffmann, A; Bimberg, D

Arrays of two-dimensional islands formed by submonolayer insertions: Growth, properties, devices*PHYSICA STATUS SOLIDI A-APPLIED RESEARCH*

- Kearns, IR; Morton, RA; Bulters, DO; Davies, CH

Opioid receptor regulation of muscarinic acetylcholine receptor-mediated synaptic responses in the hippocampus*NEUROPHARMACOLOGY*

- Czyszanowski, T; Nakwaski, W

How many quantum wells in nitride lasers?*JOURNAL OF PHYSICS D-APPLIED PHYSICS*

- Kiso, T; Nagakura, Y; Toya, T; Matsumoto, N; Tamura, S; Ito, H; Okada, M; Yamaguchi, T

Neurometer measurement of current stimulus threshold in rats*JOURNAL OF PHARMACOLOGY AND EXPERIMENTAL THERAPEUTICS*

- Zhang, YG; Chen, JX; Chen, YQ; Qi, M; Li, AZ; Frojdh, K; Stoltz, B

Characteristics of strain compensated 1.3 mu m InAsP/InGaAsP ridge waveguide laser diodes grown by gas source MBE*JOURNAL OF CRYSTAL GROWTH*

- Lin, C; Li, AZ

Temperature and injection current dependencies of 2 mu m InGaAsSb/AlGaAsSbmultiple quantum-well ridge-waveguide lasers*JOURNAL OF CRYSTAL GROWTH*

- Amanai, H; Nagao, S; Sakaki, H

InAs/GaInP self-assembled quantum dots: molecular beam epitaxial growth and optical properties*JOURNAL OF CRYSTAL GROWTH*

- Asryan, LV; Grundmann, M; Ledentsov, NN; Stier, O; Suris, RA; Bimberg, D

Maximum modal gain of a self-assembled InAs/GaAs quantum-dot laser*JOURNAL OF APPLIED PHYSICS*

- Fleischmann, T; Moran, M; Hopkinson, M; Meidia, H; Rees, GJ; Cullis, AG; Sanchez-Rojas, JL; Izpura, I

Strained layer (111)B GaAs/InGaAs single quantum well lasers and the dependence of their characteristics upon indium composition*JOURNAL OF APPLIED PHYSICS*

- Asryan, LV; Luryi, S

Tunneling-injection quantum-dot laser: Ultrahigh temperature stability*IEEE JOURNAL OF QUANTUM ELECTRONICS*

- Ukita, M; Ishibashi, A

Universal discriminant for continuous-wave operation of laser diodes*IEEE JOURNAL OF QUANTUM ELECTRONICS*

- Zhang, YJ; Chen, WY; Wang, AJ; Jiang, H; Liu, CX; Liu, SY

Design of the active structure of high-performance 1.55-mu m In1-x-yGayAlxAs strained MQW lasers*IEEE JOURNAL OF QUANTUM ELECTRONICS*

- Huang, H; Deppe, DG

Rate equation model for nonequilibrium operating conditions in a self-organized quantum-dot laser*IEEE JOURNAL OF QUANTUM ELECTRONICS*

- Greene, PL; Hall, DG

Effects of radiation on circular-grating DFB lasers - Part I: Coupled-modeequations*IEEE JOURNAL OF QUANTUM ELECTRONICS*

- Greene, PL; Hall, DG

Effects of radiation on circular-grating DFB lasers - Part II: Device and pump-beam parameters*IEEE JOURNAL OF QUANTUM ELECTRONICS*

- Kurozawa, Y; Nasu, Y

Current perception thresholds in vibration-induced neuropathy*ARCHIVES OF ENVIRONMENTAL HEALTH*

- Ghosh, S; Bhattacharya, P; Stoner, E; Singh, J; Jiang, H; Nuttinck, S; Laskar, J

Temperature-dependent measurement of Auger recombination in self-organizedIn0.4Ga0.6As/GaAs quantum dots*APPLIED PHYSICS LETTERS*

- Zhang, L; Boggess, TF; Gundogdu, K; Flatte, ME; Deppe, DG; Cao, C; Shchekin, OB

Excited-state dynamics and carrier capture in InGaAs/GaAs quantum dots*APPLIED PHYSICS LETTERS*

- Jeong, WG; Dapkus, PD; Lee, UH; Yim, JS; Lee, D; Lee, BT

Epitaxial growth and optical characterization of InAs/InGaAsP/InP self-assembled quantum dots*APPLIED PHYSICS LETTERS*

- Yang, X; Heroux, JB; Mei, LF; Wang, WI

InGaAsNSb/GaAs quantum wells for 1.55 mu m lasers grown by molecular-beam epitaxy*APPLIED PHYSICS LETTERS*

- Tatebayashi, J; Nishioka, M; Arakawa, Y

Over 1.5 mu m light emission from InAs quantum dots embedded in InGaAs strain-reducing layer grown by metalorganic chemical vapor deposition*APPLIED PHYSICS LETTERS*

- Huang, XD; Stintz, A; Li, H; Lester, LF; Cheng, J; Malloy, KJ

Passive mode-locking in 1.3 mu m two-section InAs quantum dot lasers*APPLIED PHYSICS LETTERS*

- Seko, Y; Sakamoto, A

Valence subband structures and optical properties of strain-compensated quantum wells*JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS*

- Makino, S; Miyamoto, T; Kageyama, T; Ikenaga, Y; Arai, M; Koyama, F; Iga, K

Composition dependence of thermal annealing effect on 1.3 mu m GaInNAs/GaAs quantum well lasers grown by chemical beam epitaxy*JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS*

- Avanzini, G; Panzica, F; de Curtis, M

The role of the thalamus in vigilance and epileptogenic mechanisms*CLINICAL NEUROPHYSIOLOGY*

- Kudoh, A; Ishihara, H; Matsuki, A

Current perception thresholds and postoperative pain in schizophrenic patients*REGIONAL ANESTHESIA AND PAIN MEDICINE*

- Martinet, E; Dupertuis, MA; Reinhardt, F; Biasiol, G; Kapon, E; Stier, O; Grundmann, M; Bimberg, D

Separation of strain and quantum-confinement effects in the optical spectra of quantum wires*PHYSICAL REVIEW B*

- Sugawara, M; Mukai, K; Nakata, Y; Ishikawa, H; Sakamoto, A

Effect of homogeneous broadening of optical gain on lasing spectra in self-assembled InxGa1-xAs/GaAs quantum dot lasers*PHYSICAL REVIEW B*

- Alferov, Z

Double heterostructure lasers: Early days and future perspectives*IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS*

- Coleman, JJ

Strained-layer InGaAs quantum-well heterostructure lasers*IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS*

- Harris, JS

Tunable long-wavelength vertical-cavity lasers: The engine of next generation optical networks?*IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS*

- Iga, K

Surface-emitting laser - Its birth and generation of new optoelectronics field*IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS*

- Suematsu, Y; Arai, S

Single-mode semiconductor lasers for long-wavelength optical fiber communications and dynamics of semiconductor lasers*IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS*

- Ledentsov, NN; Grundmann, M; Heinrichsdorff, F; Bimberg, D; Ustinov, VM; Zhukov, AE; Maximov, MV; Alferov, ZI; Lott, JA

Quantum-dot heterostructure lasers*IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS*

- Sugawara, M; Mukai, K; Nakata, Y; Otsubo, K; Ishikawa, H

Performance and physics of quantum-dot lasers with self-assembled columnar-shaped and 1.3-mu m emitting InGaAs quantum dots*IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS*

- Porsche, J; Ost, M; Scholz, F; Fantini, A; Phillipp, F; Riedl, T; Hangleiter, A

Growth of self-assembled InP quantum islands for red-light-emitting injection lasers*IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS*

- Piester, D; Bonsch, P; Schrimpf, T; Wehmann, HH; Schlachetzki, A

Laser-action in V-groove-shaped InGaAs-InP single quantum wires*IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS*

- Borri, P; Langbein, W; Hvam, JM; Heinrichsdorff, F; Mao, MH; Bimberg, D

Spectral hole-burning and carrier-heating dynamics in InGaAs quantum-dot amplifiers*IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS*

- Stintz, A; Liu, GT; Gray, AL; Spillers, R; Delgado, SM; Malloy, KJ

Characterization of InAs quantum dots in strained InxGa1-xAs quantum wells*JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B*

- Kim, HS; Kho, HS; Kim, YK; Lee, SW; Chung, SC

Reliability and characteristics of current perception thresholds in the territory of the infraorbital and inferior alveolar nerves*JOURNAL OF OROFACIAL PAIN*

- Eliseev, PG; Li, H; Liu, GT; Stintz, A; Newell, TC; Lester, LE; Malloy, KJ

Optical gain in InAs/InGaAs quantum-dot structures: Experiments and theoretical model*QUANTUM ELECTRONICS*

- Kudoh, A; Matsuki, A

Current perception thresholds of epileptic patients treated with valproate*SEIZURE-EUROPEAN JOURNAL OF EPILEPSY*

- Stintz, A; Liu, GT; Li, H; Lester, LF; Malloy, KJ

Low-threshold current density 1.3-mu m InAs quantum-dot lasers with the dots-in-a-well (DWELL) structure*IEEE PHOTONICS TECHNOLOGY LETTERS*

- Fiore, A; Oesterle, U; Stanley, RP; Ilegems, M

High-efficiency light-emitting diodes at approximate to 1.3 mu m using InAs-InGaAs quantum dots*IEEE PHOTONICS TECHNOLOGY LETTERS*

- Liu, GT; Stintz, A; Pease, EA; Newell, TC; Malloy, KJ; Lester, LF

1.58-mu m lattice-matched and strained digital alloy AlGaInAs-InP multiple-quantum-well lasers*IEEE PHOTONICS TECHNOLOGY LETTERS*

- Zhukov, AE; Kovsh, AR; Ustinov, VM; Livshits, DA; Kop'ev, PS; Alferov, ZI; Ledentsov, NN; Bimberg, D

3.5 W continuous wave operation from quantum dot laser*MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY*

- Porsche, J; Ost, M; Riedl, T; Hangleiter, A; Scholz, F

Lasing from excited states in self-assembled InP/GaInP quantum islands*MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY*

- Sweeney, SJ; Higashi, T; Adams, AR; Uchida, T; Fujii, T

A comparison of AlGaInAs and InGaAsP-based 1.3 mu m semiconductor lasers using high pressure*HIGH PRESSURE RESEARCH*

- Maximov, MV; Ledentsov, NN; Ustinov, VM; Alferov, ZI; Bimberg, D

GaAs-based 1.3 mu m InGaAs quantum dot lasers: A status report*JOURNAL OF ELECTRONIC MATERIALS*

- Maksimenko, SA; Slepyan, GY; Kalosha, VP; Maly, SV; Ledentsov, NN; Herrmann, J; Hoffmann, A; Bimberg, D; Alferov, ZI

Electromagnetic response of 3D arrays of quantum dots*JOURNAL OF ELECTRONIC MATERIALS*

- Emri, Z; Antal, K; Toth, TI; Cope, DW; Crunelli, V

Backpropagation of the delta oscillation and the retinal excitatory postsynaptic potential in a multi-compartment model of thalamocortical neurons*NEUROSCIENCE*

- Shirokawa, T; Ishida, Y; Isobe, K

Changes in electrophysiological properties of axon terminals of locus coeruleus neurons with age in F344 rat*NEUROSCIENCE LETTERS*

- Ustinov, VM; Zhukov, AE

GaAs-based long-wavelength lasers*SEMICONDUCTOR SCIENCE AND TECHNOLOGY*

- Maksimenko, SA; Slepyan, GY; Ledentsov, NN; Kalosha, VP; Hoffmann, A; Bimberg, D

Light confinement in a quantum dot*SEMICONDUCTOR SCIENCE AND TECHNOLOGY*

- Ledentsov, NN; Maximov, MV; Bimberg, D; Maka, T; Torres, CMS; Kochnev, IV; Krestnikov, IL; Lantratov, VM; Cherkashin, NA; Musikhin, YM; Alferov, ZI

1.3 mu m luminescence and gain from defect-free InGaAs-GaAs quantum dots grown by metal-organic chemical vapour deposition*SEMICONDUCTOR SCIENCE AND TECHNOLOGY*

- Asai, K; Feng, JM; Vaccaro, PO; Fujita, K; Ohachi, T

Possibility of a quasi-liquid layer of As on GaAs substrate grown by MBE as observed by enhancement of Ga desorption at high As pressure*APPLIED SURFACE SCIENCE*

- Maximov, MV; Tsatsul'nikov, AF; Volovik, BV; Sizov, DS; Shernyakov, YM; Kaiander, IN; Zhukov, AE; Kovsh, AR; Mikhrin, SS; Ustinov, VM; Alferov, ZI; Heitz, R; Shchukin, VA; Ledentsov, NN; Bimberg, D; Musikhin, YG; Neumann, W

Tuning quantum dot properties by activated phase separation of an InGa(Al)As alloy grown on InAs stressors*PHYSICAL REVIEW B*

- Arzberger, M; Amann, MC

Homogeneous line broadening in individual semiconductor quantum dots by temperature fluctuations*PHYSICAL REVIEW B*

- Oswald, J; Hulicius, E; Pangrac, J; Melichar, K; Simecek, T; Petricek, O; Vancura, M; Hradil, J

InAs/GaAs lasers with very thin active layer*THIN SOLID FILMS*

- Sorba, L; Schedelbeck, G; Wegscheider, W; Bichler, M; Abstreiter, G

Optical properties of T-shaped quantum wire lasers*PHYSICA STATUS SOLIDI A-APPLIED RESEARCH*

- Grundmann, M; Stier, O; Bognar, S; Ribbat, C; Heinrichsdorff, F; Bimberg, D

Optical properties of self-organized quantum dots: Modeling and experiments*PHYSICA STATUS SOLIDI A-APPLIED RESEARCH*

- Todorovic, SM; Perez-Reyes, E; Lingle, CJ

Anticonvulsants but not general anesthetics have differential blocking effects on different T-type current variants*MOLECULAR PHARMACOLOGY*

- Samoriski, GM; Gross, RA

Functional compartmentalization of opioid desensitization in primary sensory neurons*JOURNAL OF PHARMACOLOGY AND EXPERIMENTAL THERAPEUTICS*

- Weisbuch, C; Benisty, H; Houdre, R

Overview of fundamentals and applications of electrons, excitons and photons in confined structures*JOURNAL OF LUMINESCENCE*

- Makino, S; Miyamoto, T; Kageyama, T; Nishiyama, N; Koyama, F; Iga, K

GaInNAs/GaAs quantum dots grown by chemical beam epitaxy*JOURNAL OF CRYSTAL GROWTH*

- Butendeich, R; Graef, D; Schwarz, J; Ballmann, T; Schweizer, H; Scholz, F

Low threshold current densities in red VCSELs*JOURNAL OF CRYSTAL GROWTH*

- Nakata, Y; Mukai, K; Sugawara, M; Ohtsubo, K; Ishikawa, H; Yokoyama, N

Molecular beam epitaxial growth of InAs self-assembled quantum dots with light-emission at 1.3 mu m*JOURNAL OF CRYSTAL GROWTH*

- Guenaud, C; Deleporte, E; Filoramo, A; Lelong, P; Delalande, C; Morhain, C; Tournie, E; Faurie, JP

Study of the band alignment in (Zn, Cd)Se/ZnSe quantum wells by means of photoluminescence excitation spectroscopy*JOURNAL OF APPLIED PHYSICS*

- Hinzer, K; Lapointe, J; Feng, Y; Delage, A; Fafard, S; SpringThorpe, AJ; Griswold, EM

Short-wavelength laser diodes based on AlInAs/AlGaAs self-assembled quantum dots*JOURNAL OF APPLIED PHYSICS*

- Tolstikhin, VI

Carrier charge imbalance and optical properties of separate confinement heterostructure quantum well lasers*JOURNAL OF APPLIED PHYSICS*

- Huang, W; Jain, F

Enhanced optical gain in InGaN-AlGaN quantum wire and quantum dot lasers due to excitonic transitions*JOURNAL OF APPLIED PHYSICS*

- Percival, C; Houston, PA; Woodhead, J; Al-Khafaji, M; Hill, G; Roberts, JS; Knights, AP

GaAs quantum wire lasers grown on v-grooved substrates isolated by self-aligned ion implantation*IEEE TRANSACTIONS ON ELECTRON DEVICES*

- Park, G; Shchekin, OB; Deppe, DG

Temperature dependence of gain saturation in multilevel quantum dot lasers*IEEE JOURNAL OF QUANTUM ELECTRONICS*

- Shimizu, H; Kumada, K; Yamanaka, N; Iwai, N; Mukaihara, T; Kasukawa, A

1.3-mu m InAsP modulation-doped MQW lasers*IEEE JOURNAL OF QUANTUM ELECTRONICS*

- Lin, CC; Wu, MC; Liao, HH; Wang, WH

Highly uniform operation of high-performance 1.3-mu m AlGaInAs-InP monolithic laser arrays*IEEE JOURNAL OF QUANTUM ELECTRONICS*

- Piprek, J; Abraham, P; Bowers, JE

Self-consistent analysis of high-temperature effects on strained-layer multiquantum-well InGaAsP-InP lasers*IEEE JOURNAL OF QUANTUM ELECTRONICS*

- Liu, GT; Stintz, A; Li, H; Newell, TC; Gray, AL; Varangis, PM; Malloy, KJ; Lester, LF

The influence of quantum-well composition on the performance of quantum dot lasers using InAs/InGaAs dots-in-a-well (DWELL) structures*IEEE JOURNAL OF QUANTUM ELECTRONICS*

- Asryan, LV; Suris, RA

Longitudinal spatial hole burning in a quantum-dot laser*IEEE JOURNAL OF QUANTUM ELECTRONICS*

- Hatori, N; Sugawara, M; Mukai, K; Nakata, Y; Ishikawa, H

Room-temperature gain and differential gain characteristics of self-assembled InGaAs/GaAs quantum dots for 1.1-1.3 mu m semiconductor lasers*APPLIED PHYSICS LETTERS*

- Klopf, F; Reithmaier, JP; Forchel, A

Highly efficient GaInAs/(Al)GaAs quantum-dot lasers based on a single active layer versus 980 nm high-power quantum-well lasers*APPLIED PHYSICS LETTERS*

- Mukai, K; Nakata, Y; Otsubo, K; Sugawara, M; Yokoyama, N; Ishikawa, H

High characteristic temperature of near-1.3-mu m InGaAs/GaAs quantum-dot lasers at room temperature*APPLIED PHYSICS LETTERS*

- Nunoya, N; Nakamura, M; Yasumoto, H; Tamura, S; Arai, S

GdInAsP/InP multiple-layered quantum-wire lasers fabricated by CH4/H-2 reactive-ion etching*JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS*

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Documento generato il 31/10/20 alle ore 15:12:02