Catalogo Articoli (Spogli Riviste)

HELP
ATTENZIONE: attualmente gli articoli Current Contents (fonte ISI) a partire dall'anno 2002 sono consultabili sulla Risorsa On-Line

Le informazioni sugli articoli di fonte ISI sono coperte da copyright

La ricerca find articoli where soggetti phrase all words 'THRESHOLD CURRENT' sort by level,fasc_key/DESCEND, pagina_ini_num/ASCEND ha restituito 431 riferimenti
Si mostrano 100 riferimenti a partire da 1
Selezionare un intervallo

Per ulteriori informazioni selezionare i riferimenti di interesse.

    1. Alferov, ZI
      The double heterostructure: The concept and its applications in physics, electronics, and technology (Nobel lecture)

      CHEMPHYSCHEM
    2. Flatte, ME; Olesberg, JT; Grein, CH
      Theoretical comparison of mid-wavelength infrared and long-wavelength infrared lasers

      PHILOSOPHICAL TRANSACTIONS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL PHYSICAL AND ENGINEERING SCIENCES
    3. Yoon, J; Zory, P; Menna, R; Lee, H; Capewell, D
      Pulsed anodization etching for the fabrication of ridge-waveguide structures in mid-infrared InGaAsSb quantum well laser material

      ELECTROCHEMICAL AND SOLID STATE LETTERS
    4. Eliseev, PG; Li, H; Liu, GT; Stintz, A; Newell, TC; Lester, LF; Malloy, KJ
      Ground-state emission and gain in ultralow-threshold InAs-InGaAs quantum-dot lasers

      IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
    5. Strassburg, M; Schulz, O; Pohl, UW; Bimberg, D; Itoh, S; Nakano, K; Ishibashi, A; Klude, M; Hommel, D
      A novel approach for improved green-emitting II-VI lasers

      IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
    6. Asryan, LV; Suris, RA
      Carrier photoexcitation from levels in quantum dots to states of the continuum in lasing

      SEMICONDUCTORS
    7. Chang, CA; Hwang, FC; Wu, ZR; Wang, PY
      Oscillatory characteristic temperature of InAs quantum-dot laser

      IEEE PHOTONICS TECHNOLOGY LETTERS
    8. Linnik, M; Christou, A
      Optimization of III-V compound semiconductor heterostructures for distributed Bragg reflector applications in VCSELs

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    9. Higashi, T; Yamamoto, T; Ishikawa, T; Fujii, T; Soda, H; Yamada, M
      Temperature dependence of gain characteristics in 1.3-mu m AlGaInAs/InP strained multiple-quantum-well semiconductor lasers

      IEICE TRANSACTIONS ON ELECTRONICS
    10. Higashi, T; Yamamoto, T; Ishikawa, T; Fujii, T; Soda, H; Yamada, M
      Temperature dependence of gain characteristics in 1.3-mu m AlGaInAs/InP strained multiple-quantum-well semiconductor lasers

      IEICE TRANSACTIONS ON COMMUNICATIONS
    11. Burov, LI; Gribkovskii, VP; Grigelevich, PS; Kramar, MI; Ryabtsev, GI; Shore, KA; Voitikov, SV; Kragler, R
      Theoretical analysis of the effect of amplified luminescence on the modulation response of laser diodes

      INTERNATIONAL JOURNAL OF NUMERICAL MODELLING-ELECTRONIC NETWORKS DEVICES AND FIELDS
    12. Bimberg, D; Grundmann, M; Ledentsov, NN; Mao, MH; Ribbat, C; Sellin, R; Ustinov, VM; Zhukov, AE; Alferov, ZI; Lott, JA
      Novel infrared quantum dot lasers: Theory and reality

      PHYSICA STATUS SOLIDI B-BASIC RESEARCH
    13. Groom, KM; Ashmore, AD; Mowbray, DJ; Skolnick, MS; Hopkinson, M; Hill, G; Clark, J; Smowton, PM
      Optical spectroscopic study of carrier processes in self-assembled In(Ga)As-Ga(Al)As quantum dot lasers

      PHYSICA STATUS SOLIDI B-BASIC RESEARCH
    14. Ma, CS; Wang, LJ; Liu, SY
      Band structures and characteristics of InGaAs/InGaAsP strain-compensated quantum well lasers

      OPTICAL AND QUANTUM ELECTRONICS
    15. Sivaramakrishnan, S; Oliver, DL
      Distinct K currents result in physiologically distinct cell types in the inferior colliculus of the rat

      JOURNAL OF NEUROSCIENCE
    16. Schneider, HC; Chow, WW; Koch, SW
      Many-body effects in the gain spectra of highly excited quantum-dot lasers- art. no. 115315

      PHYSICAL REVIEW B
    17. Ma, CS; Wang, LJ; Liu, SY
      Threshold characteristics of 1.55-mu m InGaAs/InGaAsP strain-compensated quantum well lasers with zero net strain

      OPTICAL ENGINEERING
    18. Alferov, ZI
      Nobel Lecture: The double heterostructure concept and its applications in physics, electronics, and technology

      REVIEWS OF MODERN PHYSICS
    19. Krestnikov, IL; Ledentsov, NN; Hoffmann, A; Bimberg, D
      Arrays of two-dimensional islands formed by submonolayer insertions: Growth, properties, devices

      PHYSICA STATUS SOLIDI A-APPLIED RESEARCH
    20. Kearns, IR; Morton, RA; Bulters, DO; Davies, CH
      Opioid receptor regulation of muscarinic acetylcholine receptor-mediated synaptic responses in the hippocampus

      NEUROPHARMACOLOGY
    21. Czyszanowski, T; Nakwaski, W
      How many quantum wells in nitride lasers?

      JOURNAL OF PHYSICS D-APPLIED PHYSICS
    22. Kiso, T; Nagakura, Y; Toya, T; Matsumoto, N; Tamura, S; Ito, H; Okada, M; Yamaguchi, T
      Neurometer measurement of current stimulus threshold in rats

      JOURNAL OF PHARMACOLOGY AND EXPERIMENTAL THERAPEUTICS
    23. Zhang, YG; Chen, JX; Chen, YQ; Qi, M; Li, AZ; Frojdh, K; Stoltz, B
      Characteristics of strain compensated 1.3 mu m InAsP/InGaAsP ridge waveguide laser diodes grown by gas source MBE

      JOURNAL OF CRYSTAL GROWTH
    24. Lin, C; Li, AZ
      Temperature and injection current dependencies of 2 mu m InGaAsSb/AlGaAsSbmultiple quantum-well ridge-waveguide lasers

      JOURNAL OF CRYSTAL GROWTH
    25. Amanai, H; Nagao, S; Sakaki, H
      InAs/GaInP self-assembled quantum dots: molecular beam epitaxial growth and optical properties

      JOURNAL OF CRYSTAL GROWTH
    26. Asryan, LV; Grundmann, M; Ledentsov, NN; Stier, O; Suris, RA; Bimberg, D
      Maximum modal gain of a self-assembled InAs/GaAs quantum-dot laser

      JOURNAL OF APPLIED PHYSICS
    27. Fleischmann, T; Moran, M; Hopkinson, M; Meidia, H; Rees, GJ; Cullis, AG; Sanchez-Rojas, JL; Izpura, I
      Strained layer (111)B GaAs/InGaAs single quantum well lasers and the dependence of their characteristics upon indium composition

      JOURNAL OF APPLIED PHYSICS
    28. Asryan, LV; Luryi, S
      Tunneling-injection quantum-dot laser: Ultrahigh temperature stability

      IEEE JOURNAL OF QUANTUM ELECTRONICS
    29. Ukita, M; Ishibashi, A
      Universal discriminant for continuous-wave operation of laser diodes

      IEEE JOURNAL OF QUANTUM ELECTRONICS
    30. Zhang, YJ; Chen, WY; Wang, AJ; Jiang, H; Liu, CX; Liu, SY
      Design of the active structure of high-performance 1.55-mu m In1-x-yGayAlxAs strained MQW lasers

      IEEE JOURNAL OF QUANTUM ELECTRONICS
    31. Huang, H; Deppe, DG
      Rate equation model for nonequilibrium operating conditions in a self-organized quantum-dot laser

      IEEE JOURNAL OF QUANTUM ELECTRONICS
    32. Greene, PL; Hall, DG
      Effects of radiation on circular-grating DFB lasers - Part I: Coupled-modeequations

      IEEE JOURNAL OF QUANTUM ELECTRONICS
    33. Greene, PL; Hall, DG
      Effects of radiation on circular-grating DFB lasers - Part II: Device and pump-beam parameters

      IEEE JOURNAL OF QUANTUM ELECTRONICS
    34. Kurozawa, Y; Nasu, Y
      Current perception thresholds in vibration-induced neuropathy

      ARCHIVES OF ENVIRONMENTAL HEALTH
    35. Ghosh, S; Bhattacharya, P; Stoner, E; Singh, J; Jiang, H; Nuttinck, S; Laskar, J
      Temperature-dependent measurement of Auger recombination in self-organizedIn0.4Ga0.6As/GaAs quantum dots

      APPLIED PHYSICS LETTERS
    36. Zhang, L; Boggess, TF; Gundogdu, K; Flatte, ME; Deppe, DG; Cao, C; Shchekin, OB
      Excited-state dynamics and carrier capture in InGaAs/GaAs quantum dots

      APPLIED PHYSICS LETTERS
    37. Jeong, WG; Dapkus, PD; Lee, UH; Yim, JS; Lee, D; Lee, BT
      Epitaxial growth and optical characterization of InAs/InGaAsP/InP self-assembled quantum dots

      APPLIED PHYSICS LETTERS
    38. Yang, X; Heroux, JB; Mei, LF; Wang, WI
      InGaAsNSb/GaAs quantum wells for 1.55 mu m lasers grown by molecular-beam epitaxy

      APPLIED PHYSICS LETTERS
    39. Tatebayashi, J; Nishioka, M; Arakawa, Y
      Over 1.5 mu m light emission from InAs quantum dots embedded in InGaAs strain-reducing layer grown by metalorganic chemical vapor deposition

      APPLIED PHYSICS LETTERS
    40. Huang, XD; Stintz, A; Li, H; Lester, LF; Cheng, J; Malloy, KJ
      Passive mode-locking in 1.3 mu m two-section InAs quantum dot lasers

      APPLIED PHYSICS LETTERS
    41. Seko, Y; Sakamoto, A
      Valence subband structures and optical properties of strain-compensated quantum wells

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    42. Makino, S; Miyamoto, T; Kageyama, T; Ikenaga, Y; Arai, M; Koyama, F; Iga, K
      Composition dependence of thermal annealing effect on 1.3 mu m GaInNAs/GaAs quantum well lasers grown by chemical beam epitaxy

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    43. Avanzini, G; Panzica, F; de Curtis, M
      The role of the thalamus in vigilance and epileptogenic mechanisms

      CLINICAL NEUROPHYSIOLOGY
    44. Kudoh, A; Ishihara, H; Matsuki, A
      Current perception thresholds and postoperative pain in schizophrenic patients

      REGIONAL ANESTHESIA AND PAIN MEDICINE
    45. Martinet, E; Dupertuis, MA; Reinhardt, F; Biasiol, G; Kapon, E; Stier, O; Grundmann, M; Bimberg, D
      Separation of strain and quantum-confinement effects in the optical spectra of quantum wires

      PHYSICAL REVIEW B
    46. Sugawara, M; Mukai, K; Nakata, Y; Ishikawa, H; Sakamoto, A
      Effect of homogeneous broadening of optical gain on lasing spectra in self-assembled InxGa1-xAs/GaAs quantum dot lasers

      PHYSICAL REVIEW B
    47. Alferov, Z
      Double heterostructure lasers: Early days and future perspectives

      IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
    48. Coleman, JJ
      Strained-layer InGaAs quantum-well heterostructure lasers

      IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
    49. Harris, JS
      Tunable long-wavelength vertical-cavity lasers: The engine of next generation optical networks?

      IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
    50. Iga, K
      Surface-emitting laser - Its birth and generation of new optoelectronics field

      IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
    51. Suematsu, Y; Arai, S
      Single-mode semiconductor lasers for long-wavelength optical fiber communications and dynamics of semiconductor lasers

      IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
    52. Ledentsov, NN; Grundmann, M; Heinrichsdorff, F; Bimberg, D; Ustinov, VM; Zhukov, AE; Maximov, MV; Alferov, ZI; Lott, JA
      Quantum-dot heterostructure lasers

      IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
    53. Sugawara, M; Mukai, K; Nakata, Y; Otsubo, K; Ishikawa, H
      Performance and physics of quantum-dot lasers with self-assembled columnar-shaped and 1.3-mu m emitting InGaAs quantum dots

      IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
    54. Porsche, J; Ost, M; Scholz, F; Fantini, A; Phillipp, F; Riedl, T; Hangleiter, A
      Growth of self-assembled InP quantum islands for red-light-emitting injection lasers

      IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
    55. Piester, D; Bonsch, P; Schrimpf, T; Wehmann, HH; Schlachetzki, A
      Laser-action in V-groove-shaped InGaAs-InP single quantum wires

      IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
    56. Borri, P; Langbein, W; Hvam, JM; Heinrichsdorff, F; Mao, MH; Bimberg, D
      Spectral hole-burning and carrier-heating dynamics in InGaAs quantum-dot amplifiers

      IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
    57. Stintz, A; Liu, GT; Gray, AL; Spillers, R; Delgado, SM; Malloy, KJ
      Characterization of InAs quantum dots in strained InxGa1-xAs quantum wells

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    58. Kim, HS; Kho, HS; Kim, YK; Lee, SW; Chung, SC
      Reliability and characteristics of current perception thresholds in the territory of the infraorbital and inferior alveolar nerves

      JOURNAL OF OROFACIAL PAIN
    59. Eliseev, PG; Li, H; Liu, GT; Stintz, A; Newell, TC; Lester, LE; Malloy, KJ
      Optical gain in InAs/InGaAs quantum-dot structures: Experiments and theoretical model

      QUANTUM ELECTRONICS
    60. Kudoh, A; Matsuki, A
      Current perception thresholds of epileptic patients treated with valproate

      SEIZURE-EUROPEAN JOURNAL OF EPILEPSY
    61. Stintz, A; Liu, GT; Li, H; Lester, LF; Malloy, KJ
      Low-threshold current density 1.3-mu m InAs quantum-dot lasers with the dots-in-a-well (DWELL) structure

      IEEE PHOTONICS TECHNOLOGY LETTERS
    62. Fiore, A; Oesterle, U; Stanley, RP; Ilegems, M
      High-efficiency light-emitting diodes at approximate to 1.3 mu m using InAs-InGaAs quantum dots

      IEEE PHOTONICS TECHNOLOGY LETTERS
    63. Liu, GT; Stintz, A; Pease, EA; Newell, TC; Malloy, KJ; Lester, LF
      1.58-mu m lattice-matched and strained digital alloy AlGaInAs-InP multiple-quantum-well lasers

      IEEE PHOTONICS TECHNOLOGY LETTERS
    64. Zhukov, AE; Kovsh, AR; Ustinov, VM; Livshits, DA; Kop'ev, PS; Alferov, ZI; Ledentsov, NN; Bimberg, D
      3.5 W continuous wave operation from quantum dot laser

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    65. Porsche, J; Ost, M; Riedl, T; Hangleiter, A; Scholz, F
      Lasing from excited states in self-assembled InP/GaInP quantum islands

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    66. Sweeney, SJ; Higashi, T; Adams, AR; Uchida, T; Fujii, T
      A comparison of AlGaInAs and InGaAsP-based 1.3 mu m semiconductor lasers using high pressure

      HIGH PRESSURE RESEARCH
    67. Maximov, MV; Ledentsov, NN; Ustinov, VM; Alferov, ZI; Bimberg, D
      GaAs-based 1.3 mu m InGaAs quantum dot lasers: A status report

      JOURNAL OF ELECTRONIC MATERIALS
    68. Maksimenko, SA; Slepyan, GY; Kalosha, VP; Maly, SV; Ledentsov, NN; Herrmann, J; Hoffmann, A; Bimberg, D; Alferov, ZI
      Electromagnetic response of 3D arrays of quantum dots

      JOURNAL OF ELECTRONIC MATERIALS
    69. Emri, Z; Antal, K; Toth, TI; Cope, DW; Crunelli, V
      Backpropagation of the delta oscillation and the retinal excitatory postsynaptic potential in a multi-compartment model of thalamocortical neurons

      NEUROSCIENCE
    70. Shirokawa, T; Ishida, Y; Isobe, K
      Changes in electrophysiological properties of axon terminals of locus coeruleus neurons with age in F344 rat

      NEUROSCIENCE LETTERS
    71. Ustinov, VM; Zhukov, AE
      GaAs-based long-wavelength lasers

      SEMICONDUCTOR SCIENCE AND TECHNOLOGY
    72. Maksimenko, SA; Slepyan, GY; Ledentsov, NN; Kalosha, VP; Hoffmann, A; Bimberg, D
      Light confinement in a quantum dot

      SEMICONDUCTOR SCIENCE AND TECHNOLOGY
    73. Ledentsov, NN; Maximov, MV; Bimberg, D; Maka, T; Torres, CMS; Kochnev, IV; Krestnikov, IL; Lantratov, VM; Cherkashin, NA; Musikhin, YM; Alferov, ZI
      1.3 mu m luminescence and gain from defect-free InGaAs-GaAs quantum dots grown by metal-organic chemical vapour deposition

      SEMICONDUCTOR SCIENCE AND TECHNOLOGY
    74. Asai, K; Feng, JM; Vaccaro, PO; Fujita, K; Ohachi, T
      Possibility of a quasi-liquid layer of As on GaAs substrate grown by MBE as observed by enhancement of Ga desorption at high As pressure

      APPLIED SURFACE SCIENCE
    75. Maximov, MV; Tsatsul'nikov, AF; Volovik, BV; Sizov, DS; Shernyakov, YM; Kaiander, IN; Zhukov, AE; Kovsh, AR; Mikhrin, SS; Ustinov, VM; Alferov, ZI; Heitz, R; Shchukin, VA; Ledentsov, NN; Bimberg, D; Musikhin, YG; Neumann, W
      Tuning quantum dot properties by activated phase separation of an InGa(Al)As alloy grown on InAs stressors

      PHYSICAL REVIEW B
    76. Arzberger, M; Amann, MC
      Homogeneous line broadening in individual semiconductor quantum dots by temperature fluctuations

      PHYSICAL REVIEW B
    77. Oswald, J; Hulicius, E; Pangrac, J; Melichar, K; Simecek, T; Petricek, O; Vancura, M; Hradil, J
      InAs/GaAs lasers with very thin active layer

      THIN SOLID FILMS
    78. Sorba, L; Schedelbeck, G; Wegscheider, W; Bichler, M; Abstreiter, G
      Optical properties of T-shaped quantum wire lasers

      PHYSICA STATUS SOLIDI A-APPLIED RESEARCH
    79. Grundmann, M; Stier, O; Bognar, S; Ribbat, C; Heinrichsdorff, F; Bimberg, D
      Optical properties of self-organized quantum dots: Modeling and experiments

      PHYSICA STATUS SOLIDI A-APPLIED RESEARCH
    80. Todorovic, SM; Perez-Reyes, E; Lingle, CJ
      Anticonvulsants but not general anesthetics have differential blocking effects on different T-type current variants

      MOLECULAR PHARMACOLOGY
    81. Samoriski, GM; Gross, RA
      Functional compartmentalization of opioid desensitization in primary sensory neurons

      JOURNAL OF PHARMACOLOGY AND EXPERIMENTAL THERAPEUTICS
    82. Weisbuch, C; Benisty, H; Houdre, R
      Overview of fundamentals and applications of electrons, excitons and photons in confined structures

      JOURNAL OF LUMINESCENCE
    83. Makino, S; Miyamoto, T; Kageyama, T; Nishiyama, N; Koyama, F; Iga, K
      GaInNAs/GaAs quantum dots grown by chemical beam epitaxy

      JOURNAL OF CRYSTAL GROWTH
    84. Butendeich, R; Graef, D; Schwarz, J; Ballmann, T; Schweizer, H; Scholz, F
      Low threshold current densities in red VCSELs

      JOURNAL OF CRYSTAL GROWTH
    85. Nakata, Y; Mukai, K; Sugawara, M; Ohtsubo, K; Ishikawa, H; Yokoyama, N
      Molecular beam epitaxial growth of InAs self-assembled quantum dots with light-emission at 1.3 mu m

      JOURNAL OF CRYSTAL GROWTH
    86. Guenaud, C; Deleporte, E; Filoramo, A; Lelong, P; Delalande, C; Morhain, C; Tournie, E; Faurie, JP
      Study of the band alignment in (Zn, Cd)Se/ZnSe quantum wells by means of photoluminescence excitation spectroscopy

      JOURNAL OF APPLIED PHYSICS
    87. Hinzer, K; Lapointe, J; Feng, Y; Delage, A; Fafard, S; SpringThorpe, AJ; Griswold, EM
      Short-wavelength laser diodes based on AlInAs/AlGaAs self-assembled quantum dots

      JOURNAL OF APPLIED PHYSICS
    88. Tolstikhin, VI
      Carrier charge imbalance and optical properties of separate confinement heterostructure quantum well lasers

      JOURNAL OF APPLIED PHYSICS
    89. Huang, W; Jain, F
      Enhanced optical gain in InGaN-AlGaN quantum wire and quantum dot lasers due to excitonic transitions

      JOURNAL OF APPLIED PHYSICS
    90. Percival, C; Houston, PA; Woodhead, J; Al-Khafaji, M; Hill, G; Roberts, JS; Knights, AP
      GaAs quantum wire lasers grown on v-grooved substrates isolated by self-aligned ion implantation

      IEEE TRANSACTIONS ON ELECTRON DEVICES
    91. Park, G; Shchekin, OB; Deppe, DG
      Temperature dependence of gain saturation in multilevel quantum dot lasers

      IEEE JOURNAL OF QUANTUM ELECTRONICS
    92. Shimizu, H; Kumada, K; Yamanaka, N; Iwai, N; Mukaihara, T; Kasukawa, A
      1.3-mu m InAsP modulation-doped MQW lasers

      IEEE JOURNAL OF QUANTUM ELECTRONICS
    93. Lin, CC; Wu, MC; Liao, HH; Wang, WH
      Highly uniform operation of high-performance 1.3-mu m AlGaInAs-InP monolithic laser arrays

      IEEE JOURNAL OF QUANTUM ELECTRONICS
    94. Piprek, J; Abraham, P; Bowers, JE
      Self-consistent analysis of high-temperature effects on strained-layer multiquantum-well InGaAsP-InP lasers

      IEEE JOURNAL OF QUANTUM ELECTRONICS
    95. Liu, GT; Stintz, A; Li, H; Newell, TC; Gray, AL; Varangis, PM; Malloy, KJ; Lester, LF
      The influence of quantum-well composition on the performance of quantum dot lasers using InAs/InGaAs dots-in-a-well (DWELL) structures

      IEEE JOURNAL OF QUANTUM ELECTRONICS
    96. Asryan, LV; Suris, RA
      Longitudinal spatial hole burning in a quantum-dot laser

      IEEE JOURNAL OF QUANTUM ELECTRONICS
    97. Hatori, N; Sugawara, M; Mukai, K; Nakata, Y; Ishikawa, H
      Room-temperature gain and differential gain characteristics of self-assembled InGaAs/GaAs quantum dots for 1.1-1.3 mu m semiconductor lasers

      APPLIED PHYSICS LETTERS
    98. Klopf, F; Reithmaier, JP; Forchel, A
      Highly efficient GaInAs/(Al)GaAs quantum-dot lasers based on a single active layer versus 980 nm high-power quantum-well lasers

      APPLIED PHYSICS LETTERS
    99. Mukai, K; Nakata, Y; Otsubo, K; Sugawara, M; Yokoyama, N; Ishikawa, H
      High characteristic temperature of near-1.3-mu m InGaAs/GaAs quantum-dot lasers at room temperature

      APPLIED PHYSICS LETTERS
    100. Nunoya, N; Nakamura, M; Yasumoto, H; Tamura, S; Arai, S
      GdInAsP/InP multiple-layered quantum-wire lasers fabricated by CH4/H-2 reactive-ion etching

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS


ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 31/10/20 alle ore 15:12:02