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La ricerca find articoli where soggetti phrase all words 'SURFACE RECOMBINATION' sort by level,fasc_key/DESCEND, pagina_ini_num/ASCEND ha restituito 280 riferimenti
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    1. Lewis, NS
      Frontiers of research in photoelectrochemical solar energy conversion

      JOURNAL OF ELECTROANALYTICAL CHEMISTRY
    2. Gaubas, E; Vaitkus, J; Simoen, E; Claeys, C; Vanhellemont, J
      Excess carrier cross-sectional profiling technique for determination of the surface recombination velocity

      MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
    3. Krier, A
      Physics and technology of mid-infrared light emitting diodes

      PHILOSOPHICAL TRANSACTIONS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL PHYSICAL AND ENGINEERING SCIENCES
    4. Markovic, VL; Gocic, SR; Stamenkovic, SN; Petrovic, ZL; Radmilovic, M
      Determination of effective electron yield from swarm and time delay measurements

      EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS
    5. Vaitkus, J; Gaubas, E; Kazlauskiene, V; Mazeikis, A; Miskinis, J; Sinius, J
      Self-organized nanoclusters of semiconductor compounds on vicinal Si surfaces and its influence on carrier recombination in Si

      MATERIALS SCIENCE & ENGINEERING C-BIOMIMETIC AND SUPRAMOLECULAR SYSTEMS
    6. von Aichberger, S; Schieck, R; Kunst, M
      Study and characterization of semiconductor junctions for photovoltaic applications by contactless methods

      SOLAR ENERGY MATERIALS AND SOLAR CELLS
    7. Lenkeit, B; Steckemetz, S; Artuso, F; Hezel, R
      Excellent thermal stability of remote plasma-enhanced chemical vapour deposited silicon nitride films for the rear of screen-printed bifacial siliconsolar cells

      SOLAR ENERGY MATERIALS AND SOLAR CELLS
    8. David, M; Matsunami, H; Fuyuki, T
      Statistical analysis of local shunts and their relationship with minority-carrier lifetime in multi-crystalline silicon solar cells

      SOLAR ENERGY MATERIALS AND SOLAR CELLS
    9. Sakamoto, K; Asada, K; Sameshima, T; Saitoh, T
      High-pressure H2O vapor heating used for passivation of SiO2/Si interfaces

      SOLAR ENERGY MATERIALS AND SOLAR CELLS
    10. Muramatsu, S; Uematsu, T; Ohtsuka, H; Yazawa, Y; Warabisako, T; Nagayoshi, H; Kamisako, K
      Effect of hydrogen radical annealing on SiN passivated solar cells

      SOLAR ENERGY MATERIALS AND SOLAR CELLS
    11. Langer, JM; Sokolov, NS
      Nonradiative processes involving rare-earth impurities in nanostructures

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    12. Lee, JM; Lee, TW; Park, SH; Min, BG; Park, MP; Lee, KH; Choi, IH
      The base contact recombination current and its effect on the current gain of surface-passivated InGaP/GaAs HBTs

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    13. Pan, N; Welser, RE; Stevens, KS; Lutz, CR
      Reliability of InGaP and AlGaAsHBT

      IEICE TRANSACTIONS ON ELECTRONICS
    14. Song, CK; Lee, SH; Kim, KD; Park, JH; Koo, BW; Kim, DH; Hong, CH; Kim, YK; Hwang, SB
      Optical characteristics of InGaP/GaAs HPTs

      IEEE ELECTRON DEVICE LETTERS
    15. Redfern, DA; Thomas, JA; Musca, CA; Dell, JM; Faraone, L
      Diffusion length measurements in p-HgCdTe using laser beam induced current

      JOURNAL OF ELECTRONIC MATERIALS
    16. Cui, Y; Wright, GW; Ma, X; Chattopadhyay, K; James, RB; Burger, A
      DC photoconductivity study of semi-insulating Cd1-xZnxTe crystals

      JOURNAL OF ELECTRONIC MATERIALS
    17. Dittrich, T; Bitzer, T; Rada, T; Richardson, NV; Timoshenko, VY; Rappich, J; Koch, F
      Defect transformation under growth of submonolayer oxides on silicon surfaces at low temperatures

      MICROELECTRONIC ENGINEERING
    18. Miczek, M; Adamowicz, B; Szuber, J; Hasegawa, H
      Computer analysis of photoluminescence efficiency at InP surface with U-shaped surface state continuum

      VACUUM
    19. Ryjkov, SV; Nagao, T; Lifshits, VG; Hasegawa, S
      Surface roughness and electrical resistance on Si(100)2 x 3-Na surface

      SURFACE SCIENCE
    20. Shiraki, I; Tanabe, F; Hobara, R; Nagao, T; Hasegawa, S
      Independently driven four-tip probes for conductivity measurements in ultrahigh vacuum

      SURFACE SCIENCE
    21. Hu, XF; Hirschmugl, CJ
      Dynamics of atomic adsorbates: S on Cu(100)

      SURFACE SCIENCE
    22. Daineka, DV; Tereshchenko, OE; Paget, D
      Modulated photovoltage changes at the nonmetal-metal transition of the Na/GaAs(001) and K/GaAs(001) interfaces

      SURFACE SCIENCE
    23. Werner, WSM; Smekal, W; Tomastik, C; Stori, H
      Surface excitation probability of medium energy electrons in metals and semiconductors

      SURFACE SCIENCE
    24. Yoo, K; Weitering, HH
      Surface conductance of Si(100)2 x 1 and Si(111)7 x 7

      SURFACE SCIENCE
    25. Caceres, JO; Lopez, JT; Urena, AG
      Experimental evidence of vibrational selectivity in surface charge-transfer reactions

      SURFACE SCIENCE
    26. Bergmaier, A; Dollinger, G; Aleksov, A; Gluche, P; Kohn, E
      Deuterium depth profiles at CVD diamond surfaces

      SURFACE SCIENCE
    27. Zylka, G; Otto, A
      Search for dynamical charge transfer excitations of CO and pyridine on copper by EELS

      SURFACE SCIENCE
    28. Mah, MY; Mohammad, SN; Carter, RL
      Surface recombination in ion-implanted MOSFETs

      SOLID-STATE ELECTRONICS
    29. Bose, S; Gupta, M; Gupta, RS
      I-d-V-d characteristics of optically biased short channel GaAs MESFET

      MICROELECTRONICS JOURNAL
    30. Polignano, ML; Alessandri, M; Crivelli, B; Zonca, R; Caricato, AP; Bersani, M; Sbetti, M; Vanzetti, L
      The impact of the nitridation process on the properties of the Si-SiO2 interface

      JOURNAL OF NON-CRYSTALLINE SOLIDS
    31. Wright, S; Hasselbrink, E
      Photodesorption of disilane physisorbed on hydrogen terminated Si(100) andthe dramatic consequences of weak molecular chemisorption

      JOURNAL OF CHEMICAL PHYSICS
    32. Rohner, M; Schnyder, I; Huber, D; Jackel, H; Bergamaschi, C
      Gain limitations of scaled InP/InGaAs heterojunction bipolar transistors

      JOURNAL OF APPLIED PHYSICS
    33. Wang, Y; Neugroschel, A; Sah, CT
      Temperature dependence of surface recombination current in MOS transistors

      IEEE TRANSACTIONS ON ELECTRON DEVICES
    34. Chernyak, L; Osinsky, A; Fuflyigin, VN; Graff, JW; Schubert, EF
      Minority electron transport anisotropy in p-type AlxGa1-xN/GaN superlattices

      IEEE TRANSACTIONS ON ELECTRON DEVICES
    35. Ong, VKS; Wu, D
      Determination of diffusion length from within a confined region with the use of EBIC

      IEEE TRANSACTIONS ON ELECTRON DEVICES
    36. Lago-Aurrekoetxea, R; Tobias, I; del Canizo, C; Luque, A
      Lifetime measurements by photoconductance techniques in wafers immersed ina passivating liquid

      JOURNAL OF THE ELECTROCHEMICAL SOCIETY
    37. Tada, A; Hirano, M; Ichimura, M; Arai, E; Takamatsu, H; Sumie, S
      Characterization of Si wafer surfaces after wet chemical treatment by the microwave reflectance photconductivity decay method with surface electric field

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    38. Takato, H; Sakata, I; Shimokawa, R
      Surface passivation effect of silicon substrates due to quinhydrone/ethanol treatment

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    39. Hens, Z; Gomes, WP
      Photoanodic dissolution of n-InP: An electrochemical impedance study

      JOURNAL OF PHYSICAL CHEMISTRY B
    40. Lubberhuizen, WH; Vanmaekelbergh, D; Van Faassen, E
      Recombination of photogenerated charge carriers in nanoporous gallium phosphide

      JOURNAL OF POROUS MATERIALS
    41. Shikler, R; Fried, N; Meoded, T; Rosenwaks, Y
      Measuring minority-carrier diffusion length using a Kelvin probe force microscope

      PHYSICAL REVIEW B
    42. Cuevas, A; Russell, DA
      Co-optimisation of the emitter region and the metal grid of silicon solar cells

      PROGRESS IN PHOTOVOLTAICS
    43. Zhou, YD; Zhao, J; Gong, HM; Li, YJ; Fang, JX
      Surface recombination velocity of the HgCdTe surface passivated with sputtering CdTe film

      JOURNAL OF INFRARED AND MILLIMETER WAVES
    44. Zhang, JB; Lin, Y; Yin, F; Xiao, XR
      Studies on the interfacial charge transfer processes of nanocrystalline CdSe thin film electrodes by intensity modulated photocurrent spectroscopy

      SCIENCE IN CHINA SERIES B-CHEMISTRY
    45. Istratov, AA; Hieslmair, H; Weber, ER
      Iron contamination in silicon technology

      APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
    46. Azar, B; de la Bardonnie, M; Farah, J; Khoury, A; Pelanchon, F; Mialhe, P
      Determination of the interfacial dynamic velocity in silicon solar cells

      SOLAR ENERGY MATERIALS AND SOLAR CELLS
    47. Ichimura, M; Hirano, M; Tada, A; Arai, E; Takamatsu, H; Sumie, S
      Characterization of Si wafers by mu-PCD with surface electric field

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    48. Acciarri, M; Pizzini, S; Simone, G; Jones, D; Palermo, V
      Advances in silicon surface characterisation using light beam injection techniques

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    49. Porrini, M; Tessariol, P
      Minority carrier lifetime of p-type silicon containing oxygen precipitates: influence of injection level and precipitate size/density

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    50. Madheswaran, M; Rajamani, V; Chakrabarti, P
      Quasi-two-dimensional simulation of an ion-implanted GaAs MESFET photodetector

      MICROWAVE AND OPTICAL TECHNOLOGY LETTERS
    51. Yu, JC; Lai, BC; Lee, JY
      Fabrication and characterization of metal-oxide-semiconductor field-effecttransistors and gated diodes using Ta2O5 gate oxide

      IEEE ELECTRON DEVICE LETTERS
    52. Martinez, GL; Curiel, MR; Skromme, BJ; Molnar, RJ
      Surface recombination and sulfide passivation of GaN

      JOURNAL OF ELECTRONIC MATERIALS
    53. Toth, M; Phillips, MR
      The effects of space charge on contrast in images obtained using the environmental scanning electron microscope

      SCANNING
    54. Adamowicz, B; Hasegawa, H
      Analysis of photoluminescence efficiency and surface recombination velocity of MBE-grown AlGaAs layers

      THIN SOLID FILMS
    55. Hein, M; Dumas, P; Otto, A; Williams, GP
      CO interaction with co-adsorbed C2H4 on Cu(111) as revealed by friction with the conduction electrons

      SURFACE SCIENCE
    56. Gungor, MR; Maroudas, D
      Current-induced non-linear dynamics of voids in metallic thin films: morphological transition and surface wave propagation

      SURFACE SCIENCE
    57. Guan, DR; Yi, XZ; Zheng, YJ; Ding, SL; Sun, JZ; Olson, JA
      The effects of the motion of the surface atom on resonant charge transfer in atom-surface scattering

      SURFACE SCIENCE
    58. Aktsipetrov, OA; Blinov, LM; Fridkin, VM; Misuryaev, TV; Murzina, TV; Palto, SP; Yudin, SG
      Two-dimensional ferroelectricity and second harmonic generation in PVDF Langmuir-Blodgett films

      SURFACE SCIENCE
    59. Camillone, N; Khan, KA; Osgood, RM
      The thermal chemistry of model organosulfur compounds on gallium arsenide (110)

      SURFACE SCIENCE
    60. Tong, X; Jiang, CS; Horikoshi, K; Hasegawa, S
      Surface-stale electrical conduction on the Si(111)-root 3 x root 3-Ag surface with noble-metal adatoms

      SURFACE SCIENCE
    61. Ong, VKS; Wu, D
      Extracting diffusion length using the single contact electron beam inducedcurrent technique

      SOLID-STATE ELECTRONICS
    62. Pla, JC; Tamasi, MJL; Bolzi, CG; Venier, GL; Duran, JC
      Short circuit current vs cell thickness in solar cells under rear illumination: a direct evaluation of the diffusion length

      SOLID-STATE ELECTRONICS
    63. Pejovic, MM; Ristic, GS
      Nitrogen-filled tube as a sensor of ionizing radiation

      REVIEW OF SCIENTIFIC INSTRUMENTS
    64. Schulenburg, H; Tributsch, H
      Electropassivation of silicon and bulk lifetime determination with dry polymer contact

      JOURNAL OF PHYSICS D-APPLIED PHYSICS
    65. Kim, KH; Oh, KN; An, SM; Shin, DY; Hong, JK; Kim, YH; Kim, SU; Park, MJ
      Reduction of surface recombination in n-type HgZnTe (x=0.16) crystal

      JOURNAL OF CRYSTAL GROWTH
    66. Lefevre, L; Belmonte, T; Michel, H
      Modeling of nitrogen atom recombination on Pyrex: Influence of the vibrationally excited N-2 molecules on the loss probability of N

      JOURNAL OF APPLIED PHYSICS
    67. Sarkar, A; Subramanian, S; Goodnick, SM
      Electron irradiation effects in AlGaAs/GaAs single heterojunction bipolar transistors

      IEEE TRANSACTIONS ON ELECTRON DEVICES
    68. Ogata, YH; Ikeda, T; Sakka, T; Kobayashi, T
      Influence of dissolved oxygen on intensity modulated photocurrent spectroscopy (IMPS) at a silicon-hydrofluoric acid interface

      ELECTROCHIMICA ACTA
    69. Rodriguez, ME; Mandelis, A; Pan, G; Nicolaides, L; Garcia, JA; Riopel, Y
      Computational aspects of laser radiometric multiparameter fit for carrier transport property measurements in Si wafers

      JOURNAL OF THE ELECTROCHEMICAL SOCIETY
    70. Shen, Q; Toyoda, T
      Photoacoustic characterization of thermal and electronic transport properties of CdInGaS4 in a transmission detection configuration

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    71. Sakamoto, K; Sameshima, T
      Passivation of SiO2/Si interfaces using high-pressure-H2O-vapor heating

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    72. Shen, Q; Toyoda, T
      Dependence of the photoacoustic signal intensity on modulation frequency for CdInGaS4 crystals under a transmission detection configuration

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    73. Choi, JH; Lee, HC
      Characterization of the surface recombination velocity of HgCdTe using a gate-controlled diode

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    74. Fermin, DJ; Ponomarev, EA; Peter, LM
      A kinetic study of CdS photocorrosion by intensity modulated photocurrent and photoelectrochemical impedance spectroscopy

      JOURNAL OF ELECTROANALYTICAL CHEMISTRY
    75. Abshere, TA; Richmond, GL
      Picosecond photoluminescence study of the n-GaAs(100)/methanol interface in a photoelectrochemical cell

      JOURNAL OF PHYSICAL CHEMISTRY B
    76. Erne, BH; Ozanam, F; Chazalviel, JN
      The mechanism of hydrogen gas evolution on GaAs cathodes elucidated by in situ infrared spectroscopy

      JOURNAL OF PHYSICAL CHEMISTRY B
    77. Markovic, VL; Gocic, SR; Radovic, MK
      Breakdown probability and influence on breakdown delay

      EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS
    78. Holloway, PH; Trottier, TA; Abrams, B; Kondoleon, C; Jones, SL; Sebastian, JS; Thomas, WJ; Swart, H
      Advances in field emission displays phosphors

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    79. Grivickas, V; Linnros, J; Grivickas, P; Galeckas, A
      Band edge absorption, carrier recombination and transport measurements in 4H-SiC epilayers

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    80. Galeckas, A; Linnros, J; Frischholz, M; Rottner, K; Nordell, N; Karlsson, S; Grivickas, V
      Investigation of surface recombination and carrier lifetime in 4H/6H-SiC

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    81. Kimoto, T; Miyamoto, N; Matsunami, H
      Effects of surface defects on the performance of 4H-and 6H-SiC pn junctiondiodes

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    82. Pan, NR; Welser, RE; Lutz, CR; Elliott, J; Rodrigues, JP
      Reliability of AlGaAs and InGaP heterojunction bipolar transistors

      IEICE TRANSACTIONS ON ELECTRONICS
    83. Driad, R; McKinnon, WR; Laframboise, S; McAlister, SP
      Improved InGaAs/InP double-heterojunction bipolar transistors using a thin-emitter structure design

      MICROWAVE AND OPTICAL TECHNOLOGY LETTERS
    84. Baba, T; Inoshita, K; Tanaka, H; Yonekura, J; Ariga, M; Matsutani, A; Miyamoto, T; Koyama, F; Iga, K
      Strong enhancement of light extraction efficiency in GaInAsP 2-D-arranged microcolumns

      JOURNAL OF LIGHTWAVE TECHNOLOGY
    85. Shin, H; Leier, H; Kwon, YS
      Emitter size effects on DC current gain and RF performance in InP/InGaAs HBT's

      JOURNAL OF THE KOREAN PHYSICAL SOCIETY
    86. Koshevaya, SV; Tecpoyotl, R; Gutierrez, EA; Hayakawa, M; Grimalsky, VV
      A silicon plasma-based wideband modulator

      INTERNATIONAL JOURNAL OF INFRARED AND MILLIMETER WAVES
    87. Adamowicz, B; Miczek, M; Ikeya, K; Mutoh, M; Saitoh, T; Fujikura, H; Hasegawa, H
      Electronic properties of AlxGa1-xAs surface passivated by ultrathin silicon interface control layer

      APPLIED SURFACE SCIENCE
    88. Burger, A; Chen, H; Chattopadhyay, K; Shi, D; Morgan, SH; Collins, WE; James, RB
      Characterization of metal contacts on and surfaces of cadmium zinc telluride

      NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT
    89. Lee, KK; Jamieson, DN
      Analysis of solar cells using the IBPC technique

      NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
    90. Hao, YZ; Yang, MZ; Yu, C; Cai, SM; Zhou, GD
      The effects of chloride ions and benzotriazole on photoresponses of copperelectrodes

      THIN SOLID FILMS
    91. Bengtsson, L; Hedenas, C; Dawson, D; Zirath, H
      Large signal modelling of GaAs/AlGaAs HBT's with separation of the surfacerecombination current

      SOLID-STATE ELECTRONICS
    92. Irace, A; Sirleto, L; Vitale, GF; Cutolo, A; Zeni, L; Horzel, J; Szlufcik, J
      Transverse probe optical lifetime measurement as a tool for in-line characterization of the fabrication process of a silicon solar cell

      SOLID-STATE ELECTRONICS
    93. Liu, A; Rosenwaks, Y
      Excess carriers lifetime in InP single crystals: Radiative versus nonradiative recombination

      JOURNAL OF APPLIED PHYSICS
    94. Lee, WP; Khong, YL; Seow, WS
      Modelling the ultraviolet irradiation effect on the effective minority carrier recombination lifetime of silicon wafers

      JOURNAL OF APPLIED PHYSICS
    95. Hahneiser, O; Kunst, M
      Theoretical and experimental study of charge carrier kinetics in crystalline silicon

      JOURNAL OF APPLIED PHYSICS
    96. Kimoto, T; Miyamoto, N; Matsunami, H
      Performance limiting surface defects in SiC epitaxial p-n junction diodes

      IEEE TRANSACTIONS ON ELECTRON DEVICES
    97. Honsberg, CB; Cotter, JE; McIntosh, KR; Pritchard, SC; Richards, BS; Wenham, SR
      Design strategies for commercial solar cells using the buried contact technology

      IEEE TRANSACTIONS ON ELECTRON DEVICES
    98. Kelly, JJ; Kooij, ES; Meulenkamp, EA
      Luminescence studies of semiconductor electrodes

      ELECTROCHIMICA ACTA
    99. Sutter, EMM; Gerard, I; Etcheberry, A
      Photoluminescence as an in situ probe for copper electrodeposition on p-GaAs

      JOURNAL OF THE ELECTROCHEMICAL SOCIETY
    100. Meoded, T; Shikler, R; Fried, N; Rosenwaks, Y
      Direct measurement of minority carriers diffusion length using Kelvin probe force microscopy

      APPLIED PHYSICS LETTERS


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Documento generato il 20/10/20 alle ore 13:48:58