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La ricerca find articoli where soggetti phrase all words 'SUBSTRATE TEMPERATURES' sort by level,fasc_key/DESCEND, pagina_ini_num/ASCEND ha restituito 44 riferimenti
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    1. Einaga, Y; Kim, GS; Park, SG; Fujishima, A
      A study of the crystalline growth of highly boron-doped CVD diamond: preparation of graded-morphology diamond thin films

      DIAMOND AND RELATED MATERIALS
    2. Liu, ZJ; Zhang, DW; Wang, PF; Ding, SJ; Zhang, JY; Wang, JT; Kohse-Hoinghaus, K
      Projective phase diagrams for CVD diamond growth from C-H and C-H-O systems

      THIN SOLID FILMS
    3. Rack, MJ; Hilt, LL; Vasileska, D; Ferry, DK
      Remote plasma enhanced chemical vapor deposition SiO2 in silicon based nanostructures

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    4. Stiegler, J; Bergmaier, A; Michler, J; Laufer, S; Dollinger, G; Blank, E
      The effect of nitrogen on low temperature growth of diamond films

      THIN SOLID FILMS
    5. STIEGLER J; BERGMAIER A; MICHLER J; VONKAENEL Y; DOLLINGER G; BLANK E
      IMPURITY AND DEFECT INCORPORATION IN DIAMOND FILMS DEPOSITED AT LOW SUBSTRATE TEMPERATURES

      DIAMOND AND RELATED MATERIALS
    6. LOKA HS; BENJAMIN SD; SMITH PWE
      OPTICAL CHARACTERIZATION OF LOW-TEMPERATURE-GROWN GAAS FOR ULTRAFAST ALL-OPTICAL SWITCHING DEVICES

      IEEE journal of quantum electronics
    7. BOAKYE F; ADANU KG; GRASSIE ADC
      THE EFFECT OF SUBSTRATE TEMPERATURES ON THE HALL-COEFFICIENT OF ALPHA-MN THIN-FILMS

      Materials science & engineering. B, Solid-state materials for advanced technology
    8. ABELMANN L; LODDER C
      OBLIQUE EVAPORATION AND SURFACE-DIFFUSION

      Thin solid films
    9. ABE H; NAKASHIMA S; HARIMA H
      NEAR-BAND-EDGE PHOTOLUMINESCENCE OF GAAS EPITAXIAL LAYERS GROWN AT LOW-TEMPERATURE

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    10. HSIEH LZ; HUANG JH; SU ZA; GUO XJ; SHIH HC; WU MCY
      THE MICROSTRUCTURE OF AS PRECIPITATES IN SI DELTA-DOPED GAAS GROWN BYLOW-TEMPERATURE MOLECULAR-BEAM EPITAXY

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    11. MELLOCH MR; NOLTE DD; WOODALL JM; CHANG JCP; JANES DB; HARMON ES
      MOLECULAR-BEAM EPITAXY OF NONSTOICHIOMETRIC SEMICONDUCTORS AND MULTIPHASE MATERIAL SYSTEMS

      Critical reviews in solid state and materials sciences
    12. WANG SG; BAI XD; WANG BC; FAN YD
      PREPARATION OF TIN FILM ON BRASS BY CAPD AS A DECORATION SYSTEM

      Thin solid films
    13. SINHA S; ARORA BM; SUBRAMANIAN S
      PHOTOREFLECTANCE AND PHOTOLUMINESCENCE SPECTROSCOPY OF LOW-TEMPERATURE GAAS GROWN BY MOLECULAR-BEAM EPITAXY

      Journal of applied physics
    14. CHIN A; CHEN WJ; GANIKHANOV F; LIN GR; SHIEH JM; PAN CL; HSIEH KC
      MICROSTRUCTURE AND SUBPICOSECOND PHOTORESPONSE IN GAAS GROWN BY MOLECULAR-BEAM EPITAXY AT VERY-LOW TEMPERATURES

      Applied physics letters
    15. ABE H; HARIMA H; NAKASHIMA SI; TANI M; SAKAI K; TOKUDA Y; KANAMOTO K; ABE Y
      CHARACTERIZATION OF CRYSTALLINITY IN LOW-TEMPERATURE-GROWN GAAS-LAYERS BY RAMAN-SCATTERING AND TIME-RESOLVED PHOTOREFLECTANCE MEASUREMENTS

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    16. ALONSO JC; RAMIREZ SJ; GARCIA M; ORTIZ A
      HIGH-RATE LOW-TEMPERATURE DEPOSITION OF SILICON DIOXIDE FILMS BY REMOTE PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION USING SILICON TETRACHLORIDE

      Journal of vacuum science & technology. A. Vacuum, surfaces, and films
    17. ALONSO JC; ORTIZ A; FALCONY C; GARCIA M
      EFFECT OF THE PREDECOMPOSITION OF SIF4 ON THE PROPERTIES OF SILICON DIOXIDE DEPOSITED AT LOW-TEMPERATURES USING SIF4 SIH4/N2O IN A DOUBLE-PLASMA PROCESS/

      Journal of vacuum science & technology. A. Vacuum, surfaces, and films
    18. SCHULTE D; SUBRAMANIAN S; UNGIER L; BHATTACHARYYA K; ARTHUR JR
      MOBILITY OF MODULATION-DOPED ALGAAS LOW-TEMPERATURE MBE-GROWN GAAS HETEROSTRUCTURES/

      Journal of electronic materials
    19. TADAYON B; TWIGG ME; FATEMI M; FRANKEL MY; GIORDANA A; KATZER DS
      CHARACTERIZATION OF LOW RANGE GAAS

      Journal of electronic materials
    20. MELLOCH MR; WOODALL JM; HARMON ES; OTSUKA N; POLLAK FH; NOLTE DD; FEENSTRA RM; LUTZ MA
      LOW-TEMPERATURE-GROWN III-V MATERIALS

      Annual review of materials science
    21. CHENG TM; CHANG CY; HSU TM; LEE WC; HUANG JH
      PHOTOREFLECTANCE STUDY OF SI DELTA-DOPED LOW-TEMPERATURE GAAS GROWN BY MOLECULAR-BEAM EPITAXY

      Journal of applied physics
    22. ATIQUE N; HARMON ES; CHANG JCP; WOODALL JM; MELLOCH MR; OTSUKA N
      ELECTRICAL AND STRUCTURAL-PROPERTIES OF BE-DOPED AND SI-DOPED LOW-TEMPERATURE-GROWN GAAS

      Journal of applied physics
    23. MARSHALL PW; DALE CJ; WEATHERFORD T; CARTS M; MCMORROW D; PECZALSKI A; BAIER S; NOHAVA J; SKOGEN J
      HEAVY-ION SEU IMMUNITY OF A GAAS COMPLEMENTARY HIGFET CIRCUIT FABRICATED ON A LOW-TEMPERATURE-GROWN BUFFER LAYER

      IEEE transactions on nuclear science
    24. BOUTROS KS; ROBERTS JC; BEDAIR SM; CARRUTHERS TF; FRANKEL MY
      HIGH-SPEED METAL-SEMICONDUCTOR-METAL PHOTODETECTOR MANUFACTURED ON GAAS BY LOW-TEMPERATURE PHOTOASSISTED METALORGANIC CHEMICAL-VAPOR-DEPOSITION

      Applied physics letters
    25. CHENG TM; CHANG CY; HUANG JH
      LUMINESCENCE OF LOW-TEMPERATURE GAAS IN A GAAS IN0.2GA0.8AS MULTIPLE-QUANTUM-WELL STRUCTURE/

      Applied physics letters
    26. VANKRANENBURG H; LODDER C
      TAILORING GROWTH AND LOCAL COMPOSITION BY OBLIQUE-INCIDENCE DEPOSITION - A REVIEW AND NEW EXPERIMENTAL-DATA

      Materials science & engineering. R, Reports
    27. HOZHABRI N; SHARMA SC; PATHAK RN; ALAVI K
      DEFECTS IN MOLECULAR-BEAM EPITAXIAL GAAS GROWN AT LOW-TEMPERATURES

      Journal of electronic materials
    28. KROTKUS A; MARCINKEVICIUS S; PASISKEVICIUS V; OLIN U
      ULTRAFAST PHOTOLUMINESCENCE DECAY IN LOW-TEMPERATURE MOCVD-GROWN INXGA1-XAS

      Semiconductor science and technology
    29. CHENG TM; CHANG CY; CHANG TC; HUANG JH; HUANG MF
      HIGH-RESOLUTION X-RAY CHARACTERIZATION OF LOW-TEMPERATURE GAAS AS SUPERLATTICE GROWN BY MOLECULAR-BEAM EPITAXY/

      Applied physics letters
    30. TANI M; SAKAI K; ABE H; NAKASHIMA S; HARIMA H; HANGYO M; TOKUDA Y; KANAMOTO K; ABE YJ; TSUKADA N
      SPECTROSCOPIC CHARACTERIZATION OF LOW-TEMPERATURE-GROWN GAAS EPITAXIAL-FILMS

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    31. WICKS GW
      MOLECULAR-BEAM EPITAXY OF III-V SEMICONDUCTORS

      Critical reviews in solid state and materials sciences
    32. WITT GL
      LTMBE GAAS - PRESENT STATUS AND PERSPECTIVES

      Materials science & engineering. B, Solid-state materials for advanced technology
    33. MELLOCH MR; WOODALL JM; OTSUKA N; MAHALINGAM K; CHANG CL; NOLTE DD
      GAAS, ALGAAS, AND INGAAS EPILAYERS CONTAINING AS CLUSTERS - SEMIMETALSEMICONDUCTOR COMPOSITES/

      Materials science & engineering. B, Solid-state materials for advanced technology
    34. FALCONY C; ALONSO JC; ORTIZ A; GARCIA M; ZIRONI EP; RICKARDS J
      HIGH-QUALITY, HIGH DEPOSITION RATE SIO2-FILMS AT LOW-TEMPERATURES USING SILICON FLUORIDES AND PLASMA-ASSISTED DEPOSITION TECHNIQUES

      Journal of vacuum science & technology. A. Vacuum, surfaces, and films
    35. BERT NA; VEINGER AI; VILISOVA MD; GOLOSHCHAPOV SI; IVONIN IV; KOZYREV SV; KUNITSYN AE; LAVRENTYEVA LG; LUBYSHEV DI; PREOBRAZHENSKII VV; SEMYAGIN BR; TRETYAKOV VV; CHALDYSHEV VV; YAKUBENYA MP
      LOW-TEMPERATURE, MBE-GROWN GALLIUM-ARSENI DE - CRYSTALLINE-STRUCTURE,PROPERTIES, SUPERCONDUCTIVITY

      Fizika tverdogo tela
    36. MARACAS GN; SHIRALAGI K; RAMAMURTI R; CARPENTER RW
      A COMPARISON OF AS AND P-BASED SEMICONDUCTORS GROWN AT LOW-TEMPERATURES BY MBE AND GSMBE

      Journal of electronic materials
    37. MELLOCH MR; MAHALINGAM K; OTSUKA N; WOODALL JM; WARREN AC
      ARSENIC PRECIPITATE COARSENING IN GAAS EPILAYERS - COMMENT

      Philosophical magazine. A. Physics of condensed matter. Defects and mechanical properties
    38. LOOK DC
      MOLECULAR-BEAM EPITAXIAL GAAS GROWN AT LOW-TEMPERATURES

      Thin solid films
    39. MELLOCH MR
      MOLECULAR-BEAM EPITAXY FOR HIGH-ELECTRON-MOBILITY MODULATION-DOPED 2-DIMENSIONAL ELECTRON GASES

      Thin solid films
    40. CALAMIOTOU M; RAPTIS YS; ANASTASSAKIS E; LAGADAS M; HATZOPOULOS Z
      XRD AND RAMAN STUDIES OF LOW-TEMPERATURE-GROWN GAAS EPILAYERS

      Solid state communications
    41. LAGADAS M; TSAGARAKI K; HATZOPOULOS Z; CHRISTOU A
      INVESTIGATION OF LOW-TEMPERATURE (LT) LAYERS OF GAAS GROWN BY MBE - COMPARISON OF MESFET AND HEMT PERFORMANCE

      Journal of crystal growth
    42. HARMON ES; MELLOCH MR; WOODALL JM; NOLTE DD; OTSUKA N; CHANG CL
      CARRIER LIFETIME VERSUS ANNEAL IN LOW-TEMPERATURE GROWTH GAAS

      Applied physics letters
    43. MELLOCH MR; OTSUKA N; HARMON ES; NOLTE DD; WOODALL JM; MCINTURFF DT
      PHYSICS AND APPLICATIONS OF METALLIC ARSENIC CLUSTERS IN GAAS BASED LAYER STRUCTURES

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    44. SASAOKA C; KATO Y; USUI A
      TEMPERATURE PROGRAMMED DESORPTION STUDY OF GAAS(100)-C(4X4) AND AS4 EXPOSED (2X4) SURFACES

      Surface science


ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 12/08/20 alle ore 23:37:50