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La ricerca find articoli where soggetti phrase all words 'STRANSKI-KRASTANOV GROWTH' sort by level,fasc_key/DESCEND, pagina_ini_num/ASCEND ha restituito 73 riferimenti
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    1. Springholz, G; Pinczolits, M; Holy, V; Zerlauth, S; Vavra, I; Bauer, G
      Vertical and lateral ordering in self-organized quantum dot superlattices

      PHYSICA E
    2. Eberl, K; Lipinski, MO; Manz, YM; Winter, W; Jin-Phillipp, NY; Schmidt, OG
      Self-assembling quantum dots for optoelectronic devices on Si and GaAs

      PHYSICA E
    3. Haftel, MI; Rosen, M
      Surface embedded atom model of the electrolyte-metal interface - art. no. 195405

      PHYSICAL REVIEW B
    4. Mula, G; Adelmann, C; Moehl, S; Oullier, J; Daudin, B
      Surfactant effect of gallium during molecular-beam epitaxy of GaN on AlN (0001) - art. no. 195406

      PHYSICAL REVIEW B
    5. Mae, K
      Molecular dynamics aided kinetic Monte Carlo simulations of thin film growth of Ag on Mo(110) with structural evolution

      SURFACE SCIENCE
    6. Schmidt, OG; Eberl, K
      Self-assembled Ge/Si dots for faster field-effect transistors

      IEEE TRANSACTIONS ON ELECTRON DEVICES
    7. Dashiell, MW; Denker, U; Schmidt, OG
      Photoluminescence investigation of phononless radiative recombination and thermal-stability of germanium hut clusters on silicon(001)

      APPLIED PHYSICS LETTERS
    8. Kolobov, AV; Shklyaev, AA; Oyanagi, H; Fons, P; Yamasaki, S; Ichikawa, M
      Local structure of Ge nanoislands on Si(111) surfaces with a SiO2 coverage

      APPLIED PHYSICS LETTERS
    9. Huang, CJ; Tang, Y; Li, DZ; Cheng, BW; Luo, LP; Yu, JZ; Wang, QM
      Different transfer paths for thermally activated electrons and holes in self-organized Ge/Si(001) islands in a multilayer structure

      APPLIED PHYSICS LETTERS
    10. Brunner, K; Abstreiter, G
      Ordering and electronic properties of self-assembled Si/Ge quantum dots

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    11. Kaizu, T; Yamaguchi, K
      Self size-limiting process of InAs quantum dots grown by molecular beam epitaxy

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    12. Daudin, B; Feuillet, G; Mariette, H; Mula, G; Pelekanos, N; Molva, E; Rouviere, JL; Adelmann, C; Martinez-Guerrero, E; Barjon, J; Chabuel, F; Bataillou, B; Simon, J
      Self-assembled GaN quantum dots grown by plasma-assisted molecular beam epitaxy

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    13. Cho, JH; Kang, MH
      Ge-Si intermixing at the Ge/Si(001) surface

      PHYSICAL REVIEW B
    14. Koch, R; Wassermann, B; Wedler, G
      On the role of interdiffusion during the growth of Ge on Si(001) and Si(111)

      DEFECTS AND DIFFUSION IN SEMICONDUCTORS
    15. Politi, P; Grenet, G; Marty, A; Ponchet, A; Villain, J
      Instabilities in crystal growth by atomic or molecular beams

      PHYSICS REPORTS-REVIEW SECTION OF PHYSICS LETTERS
    16. Chretien, O; Stoica, T; Dentel, D; Mateeva, E; Vescan, L
      Influence of the mesa size on Ge island electroluminescence properties

      SEMICONDUCTOR SCIENCE AND TECHNOLOGY
    17. Shklyaev, AA; Shibata, M; Ichikawa, M
      High-density ultrasmall epitaxial Ge islands on Si(111) surfaces with a SiO2 coverage

      PHYSICAL REVIEW B
    18. Power, JR; Hinrichs, K; Peters, S; Haberland, K; Esser, N; Richter, W
      Sb-mediated Ge growth on singular and vicinal Si(001) surfaces: A surface optical characterization study

      PHYSICAL REVIEW B
    19. Larciprete, R; De Padova, P; Quaresima, C; Ottaviani, C; Perfetti, P; Peloi, M
      Ge/Si(001)c(4X2) interface formation studied by high-resolution Ge 3d and Si 2p core-level spectroscopy

      PHYSICAL REVIEW B
    20. Williams, RS; Medeiros-Ribeiro, G; Kamins, TI; Ohlberg, DAA
      Thermodynamics of the size and shape of nanocrystals: Epitaxial Ge on Si(001)

      ANNUAL REVIEW OF PHYSICAL CHEMISTRY
    21. Le Thanh, V; Yam, V; Zheng, Y; Bouchier, D
      Nucleation and growth of self-assembled Ge/Si (001) quantum dots in singleand stacked layers

      THIN SOLID FILMS
    22. Fissel, A; Akhtariev, R; Richter, W
      Stranski-Krastanov growth of Si on SiC(0001)

      THIN SOLID FILMS
    23. Eberl, K; Schmidt, OG; Kienzle, O; Ernst, F
      Preparation and optical properties of Ge and C-induced Ge quantum dots on Si

      THIN SOLID FILMS
    24. Eberl, K; Schmidt, OG; Duschl, R; Kienzle, O; Ernst, E; Rau, Y
      Self-assembling SiGe and SiGeC nanostructures for light emitters and tunneling diodes

      THIN SOLID FILMS
    25. Markov, VA; Cheng, HH; Chia, CT; Nikiforov, AI; Cherepanov, VA; Pchelyakov, OP; Zhuravlev, KS; Talochkin, AB; McGlynn, E; Henry, MO
      RHEED studies of nucleation of Ge islands on Si(001) and optical properties of ultra-small Ge quantum dots

      THIN SOLID FILMS
    26. Akazawa, H
      Growth mode of thin Si1-xGex films on Si (100) monitored by spectroscopic ellipsometry

      JOURNAL OF CRYSTAL GROWTH
    27. Kingetsu, T; Kamada, Y; Yamamoto, M
      Stranski-Krastanov growth of Al on Ag layers during molecular beam epitaxyof (111) Al/Ag superlattices

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    28. Yamaguchi, K; Yujobo, K; Kaizu, T
      Stranski-Krastanov growth of InAs quantum dots with narrow size distribution

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    29. Ross, FM; Bennett, PA; Tromp, RM; Tersoff, J; Reuter, M
      Growth kinetics of CoSi2 and Ge islands observed with in situ transmissionelectron microscopy

      MICRON
    30. Koch, R
      Intrinsic stress of ultrathin epitaxial films

      APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
    31. Parkinson, PS; Lim, D; Bungener, R; Ekerdt, JG; Downer, MC
      Second-harmonic spectroscopy of Ge/Si(001) and Si1-xGex(001)/Si(001)

      APPLIED PHYSICS B-LASERS AND OPTICS
    32. Medeiros-Ribeiro, G; Kamins, TI; Ohlberg, DAA; Williams, RS
      Equilibrium size distributions of clusters during strained epitaxial growth

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    33. Pashley, DW
      Epitaxy growth mechanisms

      MATERIALS SCIENCE AND TECHNOLOGY
    34. Rosenauer, A; Oberst, W; Gerthsen, D; Forster, A
      Atomic scale analysis of the indium distribution in InGaAs/GaAs(001) heterostructures: segregation, lateral indium redistribution and the effect of growth interruptions

      THIN SOLID FILMS
    35. Shklyaev, AA; Shibata, M; Ichikawa, M
      Instability of 2D Ge layer near the transition to 3D islands on Si(111)

      THIN SOLID FILMS
    36. Suzuki, T; Souda, R
      Structure analysis of CsCl deposited on the MgO(001) surface by coaxial impact collision atom scattering spectroscopy (CAICASS)

      SURFACE SCIENCE
    37. Williams, RS; Medeiros-Ribeiro, G; Kamins, TI; Ohlberg, DAA
      Equilibrium shape diagram for strained Ge nanocrystals on Si(001)

      JOURNAL OF PHYSICAL CHEMISTRY B
    38. ROSS FM; TERSOFF J; TROMP RM
      OSTWALD RIPENING OF SELF-ASSEMBLED GERMANIUM ISLANDS ON SILICON(100)

      MICROSCOPY AND MICROANALYSIS
    39. ROSS FM; TERSOFF J; REUTER M; LEGOUES FK; TROMP RM
      IN-SITU TRANSMISSION ELECTRON-MICROSCOPY OBSERVATIONS OF THE FORMATION OF SELF-ASSEMBLED GE ISLANDS ON SI

      Microscopy research and technique
    40. NAITO M; YAMAMOTO H; SATO H
      REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION AND ATOMIC-FORCE MICROSCOPY STUDIES ON HOMOEPITAXIAL GROWTH OF SRTIO3(001)

      Physica. C, Superconductivity
    41. HEADRICK RL; KYCIA S; WOLL AR; BROCK JD; MURTY MVR
      ION-ASSISTED NUCLEATION AND GROWTH OF GAN ON SAPPHIRE(0001)

      Physical review. B, Condensed matter
    42. SAKAMOTO K; MATSUHATA H; TANNER MO; WANG DW; WANG KL
      ALIGNMENT OF GE 3-DIMENSIONAL ISLANDS ON FACETED SI(001) SURFACES

      Thin solid films
    43. WOHL G; SCHOLLHORN C; SCHMIDT OG; BRUNNER K; EBERL K; KIENZLE O; ERNST F
      CHARACTERIZATION OF SELF-ASSEMBLED GE ISLANDS ON SI(100) BY ATOMIC-FORCE MICROSCOPY AND TRANSMISSION ELECTRON-MICROSCOPY

      Thin solid films
    44. EBERL K; SCHMIDT OG; SCHIEKER S; JINPHILLIPP NY; PHILLIPP F
      FORMATION AND OPTICAL-PROPERTIES OF CARBON-INDUCED GE DOTS

      Solid-state electronics
    45. ROSS FM; TERSOFF J; TROMP RM
      COARSENING OF SELF-ASSEMBLED GE QUANTUM DOTS ON SI(001)

      Physical review letters
    46. JESSON DE; CHEN G; CHEN KM; PENNYCOOK SJ
      SELF-LIMITING GROWTH OF STRAINED FACETED ISLANDS

      Physical review letters
    47. WEDLER G; WALZ J; HESJEDAL T; CHILLA E; KOCH R
      STRESS AND RELIEF OF MISFIT STRAIN OF GE SI(001)/

      Physical review letters
    48. STEIMETZ E; RICHTER W; SCHIENLE F; FISCHER D; KLEIN M; ZETTLER JT
      THE EFFECT OF DIFFERENT GROUP-V PRECURSORS ON THE EVOLUTION OF QUANTUM DOTS MONITORED BY OPTICAL IN-SITU MEASUREMENTS

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    49. THANH VL; BOUCHIER D; DEBARRE D
      FABRICATION OF SIGE QUANTUM DOTS ON A SI(100) SURFACE

      Physical review. B, Condensed matter
    50. GALLAS B; BERBEZIER I; RONDA A; DERRIEN J
      GROWTH MECHANISMS OF SIGE ON (111)SI AND (100)SI SUBSTRATES

      Thin solid films
    51. SCHMIDT OG; LANGE C; EBERL K; KIENZLE O; ERNST F
      FORMATION OF CARBON-INDUCED GERMANIUM DOTS

      Applied physics letters
    52. ARITA M; AVRAMESCU A; UESUGI K; SUEMUNE I; NUMAI T; MACHIDA H; SHIMOYAMA N
      SELF-ORGANIZED CDSE QUANTUM DOTS ON (100)ZNSE GAAS SURFACES GROWN BY METALORGANIC MOLECULAR-BEAM EPITAXY/

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    53. CULLIS AG
      STRAIN-INDUCED MODULATIONS IN THE SURFACE-MORPHOLOGY OF HETEROEPITAXIAL LAYERS

      MRS bulletin
    54. AUBEL D; KUBLER L; BISCHOFF JL; SIMON L; BOLMONT D
      X-RAY PHOTOELECTRON DIFFRACTION INVESTIGATION OF CE SEGREGATION AND FILM MORPHOLOGY DURING FIRST STAGE HETEROEPITAXY OF SI ON GE(001)

      Applied surface science
    55. GUNNELLA R; CASTRUCCI P; PINTO N; DAVOLI I; SEBILLEAU D; DECRESCENZI M
      X-RAY PHOTOELECTRON-DIFFRACTION STUDY OF INTERMIXING AND MORPHOLOGY AT THE GE SI(001) AND GE/SB/SI(001) INTERFACE/

      Physical review. B, Condensed matter
    56. KAXIRAS E
      ATOMISTIC ASPECTS OF DIFFUSION AND GROWTH ON THE SI AND GE (111) SURFACES

      Thin solid films
    57. HAMMAR M; LEGOUES FK; TERSOFF J; REUTER MC; TROMP RM
      IN-SITU ULTRAHIGH-VACUUM TRANSMISSION ELECTRON-MICROSCOPY STUDIES OF HETEROEPITAXIAL GROWTH .1. SI(001) GE/

      Surface science
    58. BOISHIN G; SURNEV L
      ADSORPTION OF HYDROGEN ON A GE COVERED SI(100) SURFACE

      Surface science
    59. LIU F; LAGALLY MG
      INTERPLAY OF STRESS, STRUCTURE, AND STOICHIOMETRY IN GE-COVERED SI(001)

      Physical review letters
    60. EAGLESHAM DJ; HULL R
      ISLAND FORMATION IN GE SI EPITAXY

      Materials science & engineering. B, Solid-state materials for advanced technology
    61. REAVES CM; BRESSLERHILL V; WEINBERG WH; DENBAARS SP
      EFFECTS OF DEPOSITION RATE ON THE SIZE OF SELF-ASSEMBLED INP ISLANDS FORMED ON GAINP GAAS(100) SURFACES/

      Journal of electronic materials
    62. LIN XW; LILIENTALWEBER Z; WASHBURN J; WEBER ER; SASAKI A; WAKAHARA A; HASEGAWA T
      SN SUBMONOLAYER-MEDIATED GE HETEROEPITAXY ON SI(001)

      Physical review. B, Condensed matter
    63. YU BD; OSHIYAMA A
      STRUCTURES AND REACTIONS OF MISSING DIMERS IN EPITAXIAL-GROWTH OF GE ON SI(100)

      Physical review. B, Condensed matter
    64. WU F; LAGALLY MG
      GE-INDUCED REVERSAL OF SURFACE STRESS ANISOTROPY ON SI(001)

      Physical review letters
    65. PATTHEY L; BULLOCK EL; ABUKAWA T; KONO S; JOHANSSON LSO
      MIXED GE-SI DIMER GROWTH AT THE GE SI(001)-(2X1) SURFACE/

      Physical review letters
    66. LEGOUES FK; TERSOFF J; REUTER MC; HAMMAR M; TROMP R
      RELAXATION MECHANISM OF GE ISLANDS SI(001) AT LOW-TEMPERATURE

      Applied physics letters
    67. TANAKA Y; KAMEI M; GOTOH Y
      2-DIMENSIONAL STRUCTURE AND GROWTH MODE OF ULTRATHIN CE FILM ON MO(110) SURFACE

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    68. PERSAUD R; NORO H; AZIM M; MILNE RH; VENABLES JA
      RECENT SURFACE STUDIES USING BIASSED SECONDARY-ELECTRON IMAGING

      Scanning microscopy
    69. ALBRECHT M; HANSSON PO; CHRISTIANSEN S; DORSCH W; STRUNK HP; BAUSER E
      BALANCING SURFACE-ENERGY TERMS FOR STABLE GROWTH OF PLANAR SURFACES

      Scanning microscopy
    70. CHO JH; JEONG SM; KANG MH
      FINAL-STATE PSEUDOPOTENTIAL THEORY FOR THE GE 3D CORE-LEVEL SHIFTS ONTHE GE S(100)-(2X1) SURFACE/

      Physical review. B, Condensed matter
    71. CHO JH; KANG MH
      ATOMIC-STRUCTURE OF THE GE SI(100)-(2X1) SURFACE/

      Physical review. B, Condensed matter
    72. XIE YH; GILMER GH; ROLAND C; SILVERMAN PJ; BURATTO SK; CHENG JY; FITZGERALD EA; KORTAN AR; SCHUPPLER S; MARCUS MA; CITRIN PH
      SEMICONDUCTOR SURFACE-ROUGHNESS - DEPENDENCE ON SIGN AND MAGNITUDE OFBULK STRAIN

      Physical review letters
    73. TERSOFF J; LEGOUES FK
      COMPETING RELAXATION MECHANISMS IN STRAINED LAYERS

      Physical review letters


ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 22/10/20 alle ore 09:05:29