Catalogo Articoli (Spogli Riviste)

HELP
ATTENZIONE: attualmente gli articoli Current Contents (fonte ISI) a partire dall'anno 2002 sono consultabili sulla Risorsa On-Line

Le informazioni sugli articoli di fonte ISI sono coperte da copyright

La ricerca find articoli where soggetti phrase all words 'STACKING-FAULTS' sort by level,fasc_key/DESCEND, pagina_ini_num/ASCEND ha restituito 308 riferimenti
Si mostrano 100 riferimenti a partire da 1
Selezionare un intervallo

Per ulteriori informazioni selezionare i riferimenti di interesse.

    1. Lancin, M; Ragaru, C; Godon, C
      Atomic structure and core composition of partial dislocations and dislocation fronts in beta-SiC by high-resolution transmission electron microscopy

      PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICSELECTRONIC OPTICAL AND MAGNETIC PROPERTIES
    2. Joos, B; Zhou, J
      The Peierls-Nabarro model and the mobility of the dislocation

      PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS ANDMECHANICAL PROPERTIES
    3. Karaman, I; Sehitoglu, H; Chumlyakov, YI; Maier, HJ; Kireeva, IV
      Extrinsic stacking faults and twinning in Hadfield manganese steel single crystals

      SCRIPTA MATERIALIA
    4. Pang, L; Kumar, KS
      Complex faults in a B2 iron aluminide alloy

      ACTA MATERIALIA
    5. Kikuchi, A; Iijima, Y; Inoue, K
      Microstructures of rapidly-heated/quenched and transformed Nb3Al multifilamentary superconducting wires

      IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY
    6. Menand, A; Deconihout, B; Cadel, E; Blavette, D
      Atom-probe investigations of fine-scale features in intermetallics

      MICRON
    7. Nespolo, M; Ferraris, G
      Effects of the stacking faults on the calculated electron density of mica polytypes - The Durovic effect

      EUROPEAN JOURNAL OF MINERALOGY
    8. Krinke, J; Kuchler, G; Brendel, R; Artmann, H; Frey, W; Oelting, S; Schulz, M; Strunk, HP
      Microstructure of epitaxial layers deposited on silicon by ion assisted deposition

      SOLAR ENERGY MATERIALS AND SOLAR CELLS
    9. Koutsky, J; Novy, Z
      Simulation of cold deformation influence on the final structure of austenitic steel

      JOURNAL OF MATERIALS PROCESSING TECHNOLOGY
    10. Potin, V; Gil, B; Charar, S; Ruterana, P; Nouet, G
      HREM study of basal stacking faults in GaN layers grown over sapphire substrate

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    11. Ruterana, P; Chen, J; Nouet, G
      The atomic structure and properties of wurtzite GaN epitaxial layers

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    12. Rae, CMF; Matan, N; Reed, RC
      The role of stacking fault shear in the primary creep of [001]-oriented single crystal superalloys at 750 degrees C and 750 MPa

      MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING
    13. Justo, JF; Schmidt, TM; Fazzio, A; Antonelli, A
      Segregation of dopant atoms on extended defects in semiconductors

      PHYSICA B
    14. Goela, JS; Brese, NE; Pickering, MA; Graebner, JE
      Chemical-vapor-deposited materials for high thermal conductivity applications

      MRS BULLETIN
    15. Gosk, JB
      Investigation of one-dimensionally disordered structures of A(II)B(VI) crystals by Monte Carlo technique. II. 2H structure with different kinds of stacking faults

      CRYSTAL RESEARCH AND TECHNOLOGY
    16. Ortiz, AL; Sanchez-Bajo, F; Cumbrera, FL; Guiberteau, F
      X-ray powder diffraction analysis of a silicon carbide-based ceramic

      MATERIALS LETTERS
    17. Falkovsky, LA
      Width of optical phonons: Influence of defects of various geometry - art. no. 024301

      PHYSICAL REVIEW B
    18. Rubini, S; Milocco, E; Sorba, L; Pelucchi, E; Franciosi, A; Garulli, A; Parisini, A; Zhuang, Y; Bauer, G
      Structural and electronic properties of ZnSe/AlAs heterostructures - art. no. 155312

      PHYSICAL REVIEW B
    19. Senoo, K; Endo, K; Tosaka, M; Murakami, S; Kohjiya, S
      Polymorphic behavior of syndiotactic polystyrene-based graft copolymers with polystyrene and polyisoprene side chains

      MACROMOLECULES
    20. Tashiro, K; Ueno, Y; Yoshioka, A; Kobayashi, M
      Molecular mechanism of solvent-induced crystallization of syndiotactic polystyrene glass. 1. Time-resolved measurements of infrared/Raman spectra andX-ray diffraction

      MACROMOLECULES
    21. Ho, RM; Lin, CP; Hseih, PY; Chung, TM; Tsai, HY
      Isothermal crystallization-induced phase transition of syndiotactic polystyrene polymorphism

      MACROMOLECULES
    22. Vanderschaeve, G; Levade, C; Caillard, D
      Dislocation mobility and electronic effects in semiconductor compounds

      JOURNAL OF MICROSCOPY-OXFORD
    23. Yan, YF; Al-Jassim, MM; Demuth, T
      Energetics and effects of planar defects in CdTe

      JOURNAL OF APPLIED PHYSICS
    24. Giri, PK; Coffa, S; Raineri, V; Privitera, V; Galvagno, G; La Ferla, A; Rimini, E
      Photoluminescence and structural studies on extended defect evolution during high-temperature processing of ion-implanted epitaxial silicon

      JOURNAL OF APPLIED PHYSICS
    25. Uematsu, M; Kageshima, H; Shiraishi, K
      Simulation of wet oxidation of silicon based on the interfacial silicon emission model and comparison with dry oxidation

      JOURNAL OF APPLIED PHYSICS
    26. Bell, A; Harrison, I; Korakakis, D; Larkins, EC; Hayes, JM; Kuball, M; Grandjean, N; Massies, J
      Photoluminescence spectroscopy on annealed molecular beam epitaxy grown GaN

      JOURNAL OF APPLIED PHYSICS
    27. Boulle, A; Legrand, C; Guinebretiere, R; Mercurio, JP; Dauger, A
      Planar faults in layered Bi-containing perovskites studied by X-ray diffraction line profile analysis

      JOURNAL OF APPLIED CRYSTALLOGRAPHY
    28. Bian, B; Yang, W; Laughlin, DE; Lambeth, DN
      Stacking faults and their effect on magnetocrystalline anisotropy in Co and Co-alloy thin films

      IEEE TRANSACTIONS ON MAGNETICS
    29. Holloway, L; Laidler, H
      Thermal activation effects in CoCrPtTa media due to stacking faults

      IEEE TRANSACTIONS ON MAGNETICS
    30. McCarty, DK; Reynolds, RC
      Three-dimensional crystal structures of illite-smectite minerals in paleozoic K-bentonites from the Appalachian Basin

      CLAYS AND CLAY MINERALS
    31. Sanchez, AM; Nouet, G; Ruterana, P; Pacheco, FJ; Molina, SI; Garcia, R
      A mechanism for the multiple atomic configurations of inversion domain boundaries in GaN layers grown on Si(111)

      APPLIED PHYSICS LETTERS
    32. Deshpande, SA; Bhatia, T; Xu, HW; Padture, NP; Ortiz, AL; Cumbrera, FL
      Microstructural evolution in liquid-phase-sintered SiC: Part II, effects of planar defects and seeds in the starting powder

      JOURNAL OF THE AMERICAN CERAMIC SOCIETY
    33. Kim, JM; Choi, JY; Cho, HJ; Lee, HW; Yoo, HD
      Behavior of thermally induced defects in heavily boron-doped silicon crystals

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    34. Cherepanova, SV; Tsybulya, SV
      Simulation of X-ray powder diffraction patterns for low-ordered materials

      JOURNAL OF MOLECULAR CATALYSIS A-CHEMICAL
    35. Kim, JS; Song, JH; Suh, SH
      Growth of high quality of ZnSe epilayers on (001) vicinally oriented GaAs substrate by molecular beam epitaxy

      MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
    36. Shih, CJ; Meyers, MA; Nesterenko, VF; Chen, SJ
      Damage evolution in dynamic deformation of silicon carbide

      ACTA MATERIALIA
    37. Mahajan, S
      Defects in semiconductors and their effects on devices

      ACTA MATERIALIA
    38. Faurie, JP; Tournie, E
      ZnSe-based heterostructures for blue-green lasers

      COMPTES RENDUS DE L ACADEMIE DES SCIENCES SERIE IV PHYSIQUE ASTROPHYSIQUE
    39. Look, DC; Fang, ZQ; Polenta, L
      Electrical measurements in GaN: Point defects and dislocations

      MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH
    40. Bell, A; Harrison, I; Korakakis, D; Larkins, EC; Hayes, JM; Kuball, M
      A study of annealed GaN grown by molecular beam epitaxy using photoluminescence spectroscopy.

      MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH
    41. Hong, SK; Ko, HJ; Chen, Y; Hanada, T; Yao, T
      ZnO/GaN heterointerfaces and ZnO films grown by plasma-assisted molecular beam epitaxy on (0001) GaN/Al2O3

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    42. Lavagne, S; Levade, C; Vanderschaeve, G; Crestou, J; Tournie, E; Faurie, JP
      Transmission electron microscopy study of crystal defects in ZnSe/GaAs(001) epilayers

      JOURNAL OF PHYSICS-CONDENSED MATTER
    43. Cadel, E; Launois, S; Fraczkiewicz, A; Blavette, D
      Investigation of boron-enriched Cottrell atmospheres in FeAl on an atomic scale by three-dimensional atom-probe field-ion microscopy

      PHILOSOPHICAL MAGAZINE LETTERS
    44. Paccaud, O; Derre, A
      Silicon carbide coating by reactive pack cementation - Part II: Silicon monoxide/carbon reaction

      CHEMICAL VAPOR DEPOSITION
    45. Sinno, T; Dornberger, E; von Ammon, W; Brown, RA; Dupret, F
      Defect engineering of Czochralski single-crystal silicon

      MATERIALS SCIENCE & ENGINEERING R-REPORTS
    46. Poduska, KM; DiSalvo, FJ; Petricek, V
      Structural and thermopower studies of CeNiAl4- and CeNiIn4-related compounds

      JOURNAL OF ALLOYS AND COMPOUNDS
    47. Giri, PK; Galvagno, G; La Ferla, A; Rimini, E; Coffa, S; Raineri, V
      Formation and annealing of defects during high-temperature processing of ion-implanted epitaxial silicon: the role of dopant implants

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    48. Kakehi, K
      Effect of primary and secondary precipitates on creep strength of Ni-base superalloy single crystals

      MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING
    49. Zhou, L
      Research development and prospects of superconducting materials in China

      PHYSICA C
    50. Narisawa, M; Okabe, Y; Okamura, K; Taki, T; Kamiyama, T
      Silicon-29 solid state MAS NMR investigation of silicon carbide powders prepared with a precursor method

      JOURNAL OF THE CERAMIC SOCIETY OF JAPAN
    51. King, P
      Imaging and analysis of crystal defects using transmission channeling

      MRS BULLETIN
    52. Zhi, D; Tisch, U; Zamir, SH; Wei, M; Zolotoyabko, E; Salzman, J
      Quantitative analysis of small amounts of cubic GaN phase in GaN films grown on sapphire

      JOURNAL OF ELECTRONIC MATERIALS
    53. Choi, HJ; Lee, JG
      Stacking faults in silicon carbide whiskers

      CERAMICS INTERNATIONAL
    54. Gosk, JB
      Investigation of one-dimensionally disordered structures of A(II)B(VI) crystals by Monte Carlo technique. I. The 3C disordered structure and the 3C structure with different kinds of stacking faults.

      CRYSTAL RESEARCH AND TECHNOLOGY
    55. Miotto, R; Srivastava, GP; Ferraz, AC
      Theoretical studies of the initial stages of Zn adsorption on GaAs(001)-(2X4)

      PHYSICAL REVIEW B
    56. Jonker, BT; Park, YD; Bennett, BR; Cheong, HD; Kioseoglou, G; Petrou, A
      Robust electrical spin injection into a semiconductor heterostructure

      PHYSICAL REVIEW B
    57. Batson, PE
      Structural and electronic characterization of a dissociated 60 degrees dislocation in GeSi

      PHYSICAL REVIEW B
    58. Pettinari, F; Jouiad, M; Caron, P; Calderon, H; Coujou, A; Clement, N
      Influence of the solute nature on the tensile behaviour land on the microstructure of gamma-phases of nickel based superalloys

      Revue de métallurgie
    59. Peykov, P; Aceves, M; Diaz, T
      Influence of segregation annealing time on the gettering process

      REVISTA MEXICANA DE FISICA
    60. Schmuki, P; Santinacci, L; Djenizian, T; Lockwood, DJ
      Pore formation on n-InP

      PHYSICA STATUS SOLIDI A-APPLIED RESEARCH
    61. Ho, RM; Lin, CP; Tsai, HY; Woo, EM
      Metastability studies of syndiotactic polystyrene polymorphism

      MACROMOLECULES
    62. Lee, JS; Adams, S; Maier, J
      Defect chemistry and transport characteristics of beta-AgI

      JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS
    63. Gao, YH; Bando, Y; Kurashima, K; Sato, T
      The microstructural analysis of SiC nanorods by high-resolution electron microscopy

      JOURNAL OF ELECTRON MICROSCOPY
    64. de Feraudy, MF; Torchet, G
      Deformation and twin faults in large argon clusters

      JOURNAL OF CRYSTAL GROWTH
    65. Grigorieva, NR; Grigoriev, RV; Denisov, EP; Fedorov, DL; Kazennov, BA; Novikov, BV
      Optical manifestation of stacking faults in CdS1-xSex crystals

      JOURNAL OF CRYSTAL GROWTH
    66. Luerssen, D; Bleher, R; Kalt, H; Richter, H; Schimmel, T; Rosenauer, A; Litvinov, D; Kamilli, A; Gerthsen, D; Jobst, B; Ohkawa, K; Hommel, D
      Stacking-fault-induced pairs of localizing centers in ZnSe quantum wells

      JOURNAL OF CRYSTAL GROWTH
    67. Itoh, S; Nakano, K; Ishibashi, A
      Current status and future prospects of ZnSe-based light-emitting devices

      JOURNAL OF CRYSTAL GROWTH
    68. Hwang, DH; Lee, BY; Yoo, HD; Kwon, OJ
      Anomalous oxygen precipitation near the vacancy and interstitial boundary in CZ-Si wafers

      JOURNAL OF CRYSTAL GROWTH
    69. Nakamura, K; Saishoji, T; Tomioka, J
      Simulation of point defect distributions in silicon crystals during melt-growth

      JOURNAL OF CRYSTAL GROWTH
    70. Lim, SH; Shindo, D
      Defects and interfaces in an epitaxial ZnO/LiTaO3 heterostructure

      JOURNAL OF APPLIED PHYSICS
    71. Myers, SM; Seibt, M; Schroter, W
      Mechanisms of transition-metal gettering in silicon

      JOURNAL OF APPLIED PHYSICS
    72. La Ferla, A; Galvagno, G; Giri, PK; Franzo, G; Rimini, E; Raineri, V; Gasparotto, A; Cali, D
      Oxidation induced precipitation in Al implanted epitaxial silicon

      JOURNAL OF APPLIED PHYSICS
    73. Martinez-Criado, G; Cros, A; Cantarero, A; Dimitrov, R; Ambacher, O; Stutzmann, M
      Optical characterization of Mg-doped GaN films grown by metalorganic chemical vapor phase deposition

      JOURNAL OF APPLIED PHYSICS
    74. Voronkov, VV; Falster, R
      Dopant effect on point defect incorporation into growing silicon crystal

      JOURNAL OF APPLIED PHYSICS
    75. Hierro, A; Kwon, D; Ringel, SA; Rubini, S; Pelucchi, E; Franciosi, A
      Photocapacitance study of bulk deep levels in ZnSe grown by molecular-beamepitaxy

      JOURNAL OF APPLIED PHYSICS
    76. Wong, BY; Ying, JF; Johnson, K
      Modeling of misfit induced defects in Co/Cr recording media

      IEEE TRANSACTIONS ON MAGNETICS
    77. Laughlin, DE; Lu, B; Hsu, YN; Zou, J; Lambeth, DN
      Microstructural and crystallographic aspects of thin film recording media

      IEEE TRANSACTIONS ON MAGNETICS
    78. Muller, F; Drits, V; Plancon, A; Robert, JL
      Structural transformation of 2 : 1 dioctahedral layer silicates during dehydroxylation-rehydroxylation reactions

      CLAYS AND CLAY MINERALS
    79. Muller, F; Drits, VA; Plancon, A; Besson, G
      Dehydroxylation of Fe3+, Mg-rich dioctahedral micas: (I) structural transformation

      CLAY MINERALS
    80. Liang, CH; Meng, GW; Zhang, LD; Wu, YC; Cui, Z
      Large-scale synthesis of beta-SiC nanowires by using mesoporous silica embedded with Fe nanoparticles

      CHEMICAL PHYSICS LETTERS
    81. McHugo, SA; Flink, C
      Thermal stability of copper precipitates in silicon

      APPLIED PHYSICS LETTERS
    82. von Freymann, G; Luerssen, D; Rabenstein, C; Mikolaiczyk, M; Richter, H; Kalt, H; Schimmel, T; Wegener, M; Okhawa, K; Hommel, D
      Near-field photoluminescence imaging of single defects in a ZnSe quantum-well structure at low temperatures

      APPLIED PHYSICS LETTERS
    83. Manceau, A; Lanson, B; Drits, VA; Chateigner, D; Gates, WP; Wu, J; Huo, D; Stucki, JW
      Oxidation-reduction mechanism of iron in dioctahedral smectites: I. Crystal chemistry of oxidized reference nontronites

      AMERICAN MINERALOGIST
    84. Uematsu, M; Kageshima, H; Shiraishi, K
      Oxidation simulation of (111) and (100) silicon substrates based on the interfacial silicon emission model

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    85. Kakehi, K
      Tension/compression asymmetry in creep behavior of a Ni-based superalloy

      SCRIPTA MATERIALIA
    86. Cadel, E; Lemarchand, D; Gay, AS; Fraczkiewicz, A; Blavette, D
      Atomic scale investigation of boron nanosegregation in FeAl intermetallics

      SCRIPTA MATERIALIA
    87. Guk, EG; Kamanin, AV; Shmidt, NM; Shuman, VB; Yurre, TA
      Dopant impurity diffusion from polymer diffusants and its applications in semiconductor device technology. A review

      SEMICONDUCTORS
    88. Tashiro, K; Ueno, Y; Yoshioka, A; Kaneko, F; Kobayashi, M
      Structural changes in solvent-induced crystallization of syndiotactic polystyrene viewed from the time-resolved measurements of infrared/Raman spectra and X-ray diffraction

      MACROMOLECULAR SYMPOSIA
    89. Gualtieri, AF
      Modelling the nature of disorder in talc by simulation of X-ray powder patterns

      EUROPEAN JOURNAL OF MINERALOGY
    90. Herres, N; Obloh, H; Bachem, KH; Helming, K
      X-ray analysis of the texture of heteroepitaxial gallium nitride films

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    91. Gauzzi, F; Montanari, R
      Martensite reversion in an Fe-21%Mn-0.1%C alloy

      MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING
    92. Jourdan, C; Gastaldi, J; Baronnet, A; Belkahla, S; Guenin, G
      In situ study by synchrotron X-ray diffraction of the motion of basal stacking faults during the reverse-phase transformation of a Cu-Zn-Al single crystal

      MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING
    93. Khalid, FA; Hussain, N; Shahid, KA
      Microstructure and morphology of high temperature oxidation in superalloys

      MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING
    94. Schwer, H; Molinski, R; Kopnin, EM; Angst, M; Karpinski, J
      Single crystal of the 1223/1234 intergrowth phase Hg1.44Re0.5Ba4Ca5Cu7O20:structure and properties

      PHYSICA C
    95. Northrup, JE
      Structure of the {11(2)under-bar-0} inversion domain boundary in GaN

      PHYSICA B
    96. Justo, JF; Antonelli, A; Schmidt, TM; Fazzio, A
      Effects of extended defects on the properties of intrinsic and extrinsic point defects in silicon

      PHYSICA B
    97. Okino, T; Shimozaki, T
      Thermal equilibrium concentrations and diffusivities of intrinsic point defects in silicon

      PHYSICA B
    98. Okino, T; Shimozaki, T
      Analysis of dopant diffusion in Si with stacking faults

      MATERIALS TRANSACTIONS JIM
    99. Narisawa, M; Yamane, K; Okabe, Y; Okamura, K; Kurachi, Y
      Carbon-silica alloy material as silicon carbide precursor prepared from phenol resin and ethyl silicate

      JOURNAL OF MATERIALS RESEARCH
    100. Giles, LF; Kunii, Y
      Crystallographic defects in thermally oxidized wafer bonded silicon on insulator (SOI) substrates

      JOURNAL OF ELECTRONIC MATERIALS


ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 15/01/21 alle ore 19:47:36