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Atomic structure and core composition of partial dislocations and dislocation fronts in beta-SiC by high-resolution transmission electron microscopy
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICSELECTRONIC OPTICAL AND MAGNETIC PROPERTIES
The Peierls-Nabarro model and the mobility of the dislocation
PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS ANDMECHANICAL PROPERTIES
Extrinsic stacking faults and twinning in Hadfield manganese steel single crystals
SCRIPTA MATERIALIA
Complex faults in a B2 iron aluminide alloy
ACTA MATERIALIA
Microstructures of rapidly-heated/quenched and transformed Nb3Al multifilamentary superconducting wires
IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY
Atom-probe investigations of fine-scale features in intermetallics
MICRON
Effects of the stacking faults on the calculated electron density of mica polytypes - The Durovic effect
EUROPEAN JOURNAL OF MINERALOGY
Microstructure of epitaxial layers deposited on silicon by ion assisted deposition
SOLAR ENERGY MATERIALS AND SOLAR CELLS
Simulation of cold deformation influence on the final structure of austenitic steel
JOURNAL OF MATERIALS PROCESSING TECHNOLOGY
HREM study of basal stacking faults in GaN layers grown over sapphire substrate
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
The atomic structure and properties of wurtzite GaN epitaxial layers
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
The role of stacking fault shear in the primary creep of [001]-oriented single crystal superalloys at 750 degrees C and 750 MPa
MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING
Segregation of dopant atoms on extended defects in semiconductors
PHYSICA B
Chemical-vapor-deposited materials for high thermal conductivity applications
MRS BULLETIN
Investigation of one-dimensionally disordered structures of A(II)B(VI) crystals by Monte Carlo technique. II. 2H structure with different kinds of stacking faults
CRYSTAL RESEARCH AND TECHNOLOGY
X-ray powder diffraction analysis of a silicon carbide-based ceramic
MATERIALS LETTERS
Width of optical phonons: Influence of defects of various geometry - art. no. 024301
PHYSICAL REVIEW B
Structural and electronic properties of ZnSe/AlAs heterostructures - art. no. 155312
PHYSICAL REVIEW B
Polymorphic behavior of syndiotactic polystyrene-based graft copolymers with polystyrene and polyisoprene side chains
MACROMOLECULES
Molecular mechanism of solvent-induced crystallization of syndiotactic polystyrene glass. 1. Time-resolved measurements of infrared/Raman spectra andX-ray diffraction
MACROMOLECULES
Isothermal crystallization-induced phase transition of syndiotactic polystyrene polymorphism
MACROMOLECULES
Dislocation mobility and electronic effects in semiconductor compounds
JOURNAL OF MICROSCOPY-OXFORD
Energetics and effects of planar defects in CdTe
JOURNAL OF APPLIED PHYSICS
Photoluminescence and structural studies on extended defect evolution during high-temperature processing of ion-implanted epitaxial silicon
JOURNAL OF APPLIED PHYSICS
Simulation of wet oxidation of silicon based on the interfacial silicon emission model and comparison with dry oxidation
JOURNAL OF APPLIED PHYSICS
Photoluminescence spectroscopy on annealed molecular beam epitaxy grown GaN
JOURNAL OF APPLIED PHYSICS
Planar faults in layered Bi-containing perovskites studied by X-ray diffraction line profile analysis
JOURNAL OF APPLIED CRYSTALLOGRAPHY
Stacking faults and their effect on magnetocrystalline anisotropy in Co and Co-alloy thin films
IEEE TRANSACTIONS ON MAGNETICS
Thermal activation effects in CoCrPtTa media due to stacking faults
IEEE TRANSACTIONS ON MAGNETICS
Three-dimensional crystal structures of illite-smectite minerals in paleozoic K-bentonites from the Appalachian Basin
CLAYS AND CLAY MINERALS
A mechanism for the multiple atomic configurations of inversion domain boundaries in GaN layers grown on Si(111)
APPLIED PHYSICS LETTERS
Microstructural evolution in liquid-phase-sintered SiC: Part II, effects of planar defects and seeds in the starting powder
JOURNAL OF THE AMERICAN CERAMIC SOCIETY
Behavior of thermally induced defects in heavily boron-doped silicon crystals
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
Simulation of X-ray powder diffraction patterns for low-ordered materials
JOURNAL OF MOLECULAR CATALYSIS A-CHEMICAL
Growth of high quality of ZnSe epilayers on (001) vicinally oriented GaAs substrate by molecular beam epitaxy
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
Damage evolution in dynamic deformation of silicon carbide
ACTA MATERIALIA
Defects in semiconductors and their effects on devices
ACTA MATERIALIA
ZnSe-based heterostructures for blue-green lasers
COMPTES RENDUS DE L ACADEMIE DES SCIENCES SERIE IV PHYSIQUE ASTROPHYSIQUE
Electrical measurements in GaN: Point defects and dislocations
MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH
A study of annealed GaN grown by molecular beam epitaxy using photoluminescence spectroscopy.
MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH
ZnO/GaN heterointerfaces and ZnO films grown by plasma-assisted molecular beam epitaxy on (0001) GaN/Al2O3
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
Transmission electron microscopy study of crystal defects in ZnSe/GaAs(001) epilayers
JOURNAL OF PHYSICS-CONDENSED MATTER
Investigation of boron-enriched Cottrell atmospheres in FeAl on an atomic scale by three-dimensional atom-probe field-ion microscopy
PHILOSOPHICAL MAGAZINE LETTERS
Silicon carbide coating by reactive pack cementation - Part II: Silicon monoxide/carbon reaction
CHEMICAL VAPOR DEPOSITION
Defect engineering of Czochralski single-crystal silicon
MATERIALS SCIENCE & ENGINEERING R-REPORTS
Structural and thermopower studies of CeNiAl4- and CeNiIn4-related compounds
JOURNAL OF ALLOYS AND COMPOUNDS
Formation and annealing of defects during high-temperature processing of ion-implanted epitaxial silicon: the role of dopant implants
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
Effect of primary and secondary precipitates on creep strength of Ni-base superalloy single crystals
MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING
Research development and prospects of superconducting materials in China
PHYSICA C
Silicon-29 solid state MAS NMR investigation of silicon carbide powders prepared with a precursor method
JOURNAL OF THE CERAMIC SOCIETY OF JAPAN
Imaging and analysis of crystal defects using transmission channeling
MRS BULLETIN
Quantitative analysis of small amounts of cubic GaN phase in GaN films grown on sapphire
JOURNAL OF ELECTRONIC MATERIALS
Stacking faults in silicon carbide whiskers
CERAMICS INTERNATIONAL
Investigation of one-dimensionally disordered structures of A(II)B(VI) crystals by Monte Carlo technique. I. The 3C disordered structure and the 3C structure with different kinds of stacking faults.
CRYSTAL RESEARCH AND TECHNOLOGY
Theoretical studies of the initial stages of Zn adsorption on GaAs(001)-(2X4)
PHYSICAL REVIEW B
Robust electrical spin injection into a semiconductor heterostructure
PHYSICAL REVIEW B
Structural and electronic characterization of a dissociated 60 degrees dislocation in GeSi
PHYSICAL REVIEW B
Influence of the solute nature on the tensile behaviour land on the microstructure of gamma-phases of nickel based superalloys
Revue de métallurgie
Influence of segregation annealing time on the gettering process
REVISTA MEXICANA DE FISICA
Pore formation on n-InP
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH
Metastability studies of syndiotactic polystyrene polymorphism
MACROMOLECULES
Defect chemistry and transport characteristics of beta-AgI
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS
The microstructural analysis of SiC nanorods by high-resolution electron microscopy
JOURNAL OF ELECTRON MICROSCOPY
Deformation and twin faults in large argon clusters
JOURNAL OF CRYSTAL GROWTH
Optical manifestation of stacking faults in CdS1-xSex crystals
JOURNAL OF CRYSTAL GROWTH
Stacking-fault-induced pairs of localizing centers in ZnSe quantum wells
JOURNAL OF CRYSTAL GROWTH
Current status and future prospects of ZnSe-based light-emitting devices
JOURNAL OF CRYSTAL GROWTH
Anomalous oxygen precipitation near the vacancy and interstitial boundary in CZ-Si wafers
JOURNAL OF CRYSTAL GROWTH
Simulation of point defect distributions in silicon crystals during melt-growth
JOURNAL OF CRYSTAL GROWTH
Defects and interfaces in an epitaxial ZnO/LiTaO3 heterostructure
JOURNAL OF APPLIED PHYSICS
Mechanisms of transition-metal gettering in silicon
JOURNAL OF APPLIED PHYSICS
Oxidation induced precipitation in Al implanted epitaxial silicon
JOURNAL OF APPLIED PHYSICS
Optical characterization of Mg-doped GaN films grown by metalorganic chemical vapor phase deposition
JOURNAL OF APPLIED PHYSICS
Dopant effect on point defect incorporation into growing silicon crystal
JOURNAL OF APPLIED PHYSICS
Photocapacitance study of bulk deep levels in ZnSe grown by molecular-beamepitaxy
JOURNAL OF APPLIED PHYSICS
Modeling of misfit induced defects in Co/Cr recording media
IEEE TRANSACTIONS ON MAGNETICS
Microstructural and crystallographic aspects of thin film recording media
IEEE TRANSACTIONS ON MAGNETICS
Structural transformation of 2 : 1 dioctahedral layer silicates during dehydroxylation-rehydroxylation reactions
CLAYS AND CLAY MINERALS
Dehydroxylation of Fe3+, Mg-rich dioctahedral micas: (I) structural transformation
CLAY MINERALS
Large-scale synthesis of beta-SiC nanowires by using mesoporous silica embedded with Fe nanoparticles
CHEMICAL PHYSICS LETTERS
Thermal stability of copper precipitates in silicon
APPLIED PHYSICS LETTERS
Near-field photoluminescence imaging of single defects in a ZnSe quantum-well structure at low temperatures
APPLIED PHYSICS LETTERS
Oxidation-reduction mechanism of iron in dioctahedral smectites: I. Crystal chemistry of oxidized reference nontronites
AMERICAN MINERALOGIST
Oxidation simulation of (111) and (100) silicon substrates based on the interfacial silicon emission model
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
Tension/compression asymmetry in creep behavior of a Ni-based superalloy
SCRIPTA MATERIALIA
Atomic scale investigation of boron nanosegregation in FeAl intermetallics
SCRIPTA MATERIALIA
Dopant impurity diffusion from polymer diffusants and its applications in semiconductor device technology. A review
SEMICONDUCTORS
Structural changes in solvent-induced crystallization of syndiotactic polystyrene viewed from the time-resolved measurements of infrared/Raman spectra and X-ray diffraction
MACROMOLECULAR SYMPOSIA
Modelling the nature of disorder in talc by simulation of X-ray powder patterns
EUROPEAN JOURNAL OF MINERALOGY
X-ray analysis of the texture of heteroepitaxial gallium nitride films
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
Martensite reversion in an Fe-21%Mn-0.1%C alloy
MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING
In situ study by synchrotron X-ray diffraction of the motion of basal stacking faults during the reverse-phase transformation of a Cu-Zn-Al single crystal
MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING
Microstructure and morphology of high temperature oxidation in superalloys
MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING
Single crystal of the 1223/1234 intergrowth phase Hg1.44Re0.5Ba4Ca5Cu7O20:structure and properties
PHYSICA C
Structure of the {11(2)under-bar-0} inversion domain boundary in GaN
PHYSICA B
Effects of extended defects on the properties of intrinsic and extrinsic point defects in silicon
PHYSICA B
Thermal equilibrium concentrations and diffusivities of intrinsic point defects in silicon
PHYSICA B
Analysis of dopant diffusion in Si with stacking faults
MATERIALS TRANSACTIONS JIM
Carbon-silica alloy material as silicon carbide precursor prepared from phenol resin and ethyl silicate
JOURNAL OF MATERIALS RESEARCH
Crystallographic defects in thermally oxidized wafer bonded silicon on insulator (SOI) substrates
JOURNAL OF ELECTRONIC MATERIALS