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La ricerca find articoli where soggetti phrase all words 'SPECTROSCOPIC ELLIPSOMETRY' sort by level,fasc_key/DESCEND, pagina_ini_num/ASCEND ha restituito 708 riferimenti
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    1. Logothetidis, S; Gioti, M; Charitidis, C; Patsalas, P
      Development of diamond and diamond-related materials with desired properties

      ADVANCED ENGINEERING MATERIALS
    2. Diebold, AC; Canterbury, J; Chism, W; Richter, C; Nguyen, N; Ehrstein, J; Weintraub, C
      Characterization and production metrology of gate dielectric films

      MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
    3. Keddie, JL
      Structural analysis of organic interfacial layers by ellipsometry

      CURRENT OPINION IN COLLOID & INTERFACE SCIENCE
    4. Cobianu, B; Modreanu, M; Danila, M; Gavrila, R; Bercu, M; Gartner, M
      Structural and morphological changes in low temperature annealed LPCVD Si layers

      JOURNAL DE PHYSIQUE IV
    5. Hu, YZ; Tay, SP
      Characterization of high-K dielectric ZrO2 films annealed by rapid thermalprocessing

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    6. Akazawa, H
      Formation of Si-Si bonds and precipitation of Si nanocrystals in vacuum-ultraviolet-irradiated a-SiO2 films

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    7. Tinani, M; Mueller, A; Gao, Y; Irene, EA; Hu, YZ; Tay, SP
      In situ real-time studies of nickel silicide phase formation

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    8. Rosen, IG; Parent, T; Cooper, C; Chen, P; Madhukar, A
      A neural-network-based approach to determining a robust process recipe forthe plasma-enhanced deposition of silicon nitride thin films

      IEEE TRANSACTIONS ON CONTROL SYSTEMS TECHNOLOGY
    9. Huang, ZM; Zang, ZH; Jiang, CP; Chu, JH
      Refractive index enhancement effect in Hg1-xCdxTe near the fundamental gap

      JOURNAL OF INFRARED AND MILLIMETER WAVES
    10. Bahng, JH; Kim, KJ; Ihm, SH; Kim, JY; Park, HL
      Evolution of optical constants and electronic structure of disordered Si1-xGex alloys

      JOURNAL OF PHYSICS-CONDENSED MATTER
    11. Yamamoto, S; Oda, S
      Atomic layer-by-layer MOCVD of complex metal oxides and in situ process monitoring

      CHEMICAL VAPOR DEPOSITION
    12. Dragan, S; Schwarz, S; Eichhorn, KJ; Lunkwitz, M
      Electrostatic self-assembled nano architectures between polycations of integral type and azo dyes

      COLLOIDS AND SURFACES A-PHYSICOCHEMICAL AND ENGINEERING ASPECTS
    13. Hermann, AM; Gonzalez, C; Ramakrishnan, PA; Balzar, D; Popa, N; Rice, P; Marshall, CH; Hilfiker, JN; Tiwald, T; Sebastian, PJ; Calixto, ME; Bhattacharya, RN
      Fundamental studies on large area Cu(In,Ga)Se-2 films for high efficiency solar cells

      SOLAR ENERGY MATERIALS AND SOLAR CELLS
    14. Hamma, S; Cabarrocas, PRI
      Low-temperature growth of thick intrinsic and ultrathin phosphorous or boron-doped microcrystalline silicon films: Optimum crystalline fractions for solar cell applications

      SOLAR ENERGY MATERIALS AND SOLAR CELLS
    15. Fujiwara, H; Toyoshima, Y; Kondo, M; Matsuda, A
      Application of real-time in situ spectroscopic ellipsometry and infrared spectroscopy for characterizing interface structure of a-Si : H layer

      SOLAR ENERGY MATERIALS AND SOLAR CELLS
    16. Matsuura, D; Kamiya, T; Fortmann, CM; Simizu, I
      Microstructure control of very thin polycrystalline silicon layers on glass substrate by plasma enhanced CVD

      SOLAR ENERGY MATERIALS AND SOLAR CELLS
    17. Canillas, A; Polo, MC; Andujar, JL; Sancho, J; Bosch, S; Robertson, J; Milne, WI
      Spectroscopic ellipsometric study of tetrahedral amorphous carbon films: optical properties and modelling

      DIAMOND AND RELATED MATERIALS
    18. Zapien, JA; Messier, R; Collins, RW
      Multichannel ellipsometry from 1.5 to 6.5 eV for real time characterization of wide band gap materials: phase identification in boron nitride thin films

      DIAMOND AND RELATED MATERIALS
    19. Logothetidis, S; Gioti, M; Patsalas, P
      Real-time monitoring, growth kinetics and properties of carbon based materials deposited by sputtering

      DIAMOND AND RELATED MATERIALS
    20. Duteil, F; Du, CX; Jarrendahl, K; Ni, WX; Hansson, GV
      Er/O doped Si1-xGex alloy layers grown by MBE

      OPTICAL MATERIALS
    21. Arwin, H
      Is ellipsometry suitable for sensor applications?

      SENSORS AND ACTUATORS A-PHYSICAL
    22. Sakaino, K; Adachi, S
      Study of Si(100) surfaces etched in TMAH solution

      SENSORS AND ACTUATORS A-PHYSICAL
    23. Richter, P; Kress, M; Mohler, E; Roskos, HG; Jakob, G; Adrian, H
      Optical determination of the oxygen content of YBa2Cu3O6+x thin films by IR reflectance and transmittance measurements

      PHYSICA C
    24. Steen, ML; Flory, WC; Capps, NE; Fisher, ER
      Plasma modification of porous structures for formation of composite materials

      CHEMISTRY OF MATERIALS
    25. Yan, L; Gao, X; Bungay, C; Woollam, JA
      Study of surface chemical changes and erosion rates for CV-1144-0 siliconeunder electron cyclotron resonance oxygen plasma exposure

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
    26. Varela, H; Malta, M; Torresi, RM
      Microgravimetric study of the influence of the solvent on the redox properties of polypyrrol modified electrodes

      JOURNAL OF POWER SOURCES
    27. Bang, CY; Lee, MS; Kim, TJ; Kim, YD; Aspnes, DE; Yu, YM; O, BS; Choi, YD
      Above bandgap optical properties of ZnS and ZnS1-xTex alloys grown by using hot-wall epitaxy

      JOURNAL OF THE KOREAN PHYSICAL SOCIETY
    28. Daraselia, M; Garland, JW; Johs, B; Nathan, V; Sivananthan, S
      Improvement of the accuracy of the in-situ ellipsometric measurements of temperature and alloy composition for MBE grown HgCdTe LWIR/MWIR structures

      JOURNAL OF ELECTRONIC MATERIALS
    29. Edwall, D; Phillips, J; Lee, D; Arias, J
      Composition control of long wavelength MBE HgCdTe using in-situ spectroscopic ellipsometry

      JOURNAL OF ELECTRONIC MATERIALS
    30. Cui, R; Bhat, I; O'Quinn, B; Venkatasubramanian, R
      In-situ monitoring of the growth of Bi2Te3 and Sb2Te3 films and Bi2Te3-Sb2Te3 superlattice using spectroscopic ellipsometry

      JOURNAL OF ELECTRONIC MATERIALS
    31. Taniyasu, Y; Yoshikawa, A
      In-situ monitoring of surface stoichiometry and growth kinetics study of GaN (0001) in MOVPE by spectroscopic ellipsometry

      JOURNAL OF ELECTRONIC MATERIALS
    32. Manova, D; Huber, P; Mandl, S; Rauschenbach, B
      Filtered arc deposition and implantation of aluminium nitride

      SURFACE & COATINGS TECHNOLOGY
    33. Huber, P; Manova, D; Mandl, S; Rauschenbach, B
      Optical characterization of TiN produced by metal-plasma immersion ion implantation

      SURFACE & COATINGS TECHNOLOGY
    34. Sahre, K; Eichhorn, KJ; Simon, F; Pleul, D; Janke, A; Gerlach, G
      Characterization of ion-beam modified polyimide layers

      SURFACE & COATINGS TECHNOLOGY
    35. Liu, XJ; Cai, X; Mao, JF; Jin, CY
      ZnS/Ag/ZnS nano-multilayer films for transparent electrodes in flat display application

      APPLIED SURFACE SCIENCE
    36. Bartella, J; Schroeder, J; Witting, K
      Characterization of ITO- and TiOxNy films by spectroscopic ellipsometry, spectraphotometry and XPS

      APPLIED SURFACE SCIENCE
    37. Postava, K; Aoyama, M; Yamaguchi, T
      Optical characterization of TiN/SiO2(1000 nm)/Si system by spectroscopic ellipsometry and reflectometry

      APPLIED SURFACE SCIENCE
    38. Postava, K; Aoyama, M; Yamaguchi, T; Oda, H
      Spectroellipsometric characterization of materials for multilayer coatings

      APPLIED SURFACE SCIENCE
    39. Postava, K; Sueki, H; Aoyama, M; Yamaguchi, T; Murakami, K; Igasaki, Y
      Doping effects on optical properties of epitaxial ZnO layers determined byspectroscopic ellipsometry

      APPLIED SURFACE SCIENCE
    40. Wongmanerod, C; Zangooie, S; Arwin, H
      Determination of pore size distribution and surface area of thin porous silicon layers by spectroscopic ellipsometry

      APPLIED SURFACE SCIENCE
    41. Kuwahara, M; Nakano, T; Mihalcea, C; Shima, T; Kim, JH; Tominaga, J; Atoda, N
      Less than 0.1 mu m linewidth fabrication by visible light using super-resolution near-field structure

      MICROELECTRONIC ENGINEERING
    42. Cobet, C; Esser, N; Zetter, JT; Richter, W; Waltereit, P; Brandt, O; Ploog, KH; Peters, S; Edwards, NV; Lindquist, OPA; Cardona, M
      Optical properties of wurtzite AlxGa1-xN (x < 0.1) parallel and perpendicular to the c axis - art. no. 165203

      PHYSICAL REVIEW B
    43. Perkins, JD; Mascarenhas, A; Geisz, JF; Friedman, DJ
      Conduction-band-resonant nitrogen-induced levels in GaAs1-xNx with x < 0.03 - art. no. 121301

      PHYSICAL REVIEW B
    44. Franta, D; Ohlidal, I; Klapetek, P; Pokorny, P; Ohlidal, M
      Analysis of inhomogeneous thin films of ZrO2 by the combined optical method and atomic force microscopy

      SURFACE AND INTERFACE ANALYSIS
    45. Pickering, C
      Optical characterization techniques for process monitoring

      SURFACE AND INTERFACE ANALYSIS
    46. Wronkowska, AA; Wronkowski, A; Arwin, H; Firszt, F; Legowski, S; Meczynska, H; Szatkowski, J
      Characterisation of Cd1-xMgxSe solid solutions by spectroscopic ellipsometry

      VACUUM
    47. Szekeres, A; Paneva, A; Alexandrova, S
      Study of thin SiO2 and its interface formed by thermal oxidation of rf hydrogen plasma-cleaned silicon

      VACUUM
    48. Franta, D; Zajickova, L; Ohlidal, I; Janca, J
      Optical characterization of diamond-like carbon films

      VACUUM
    49. Tonova, DA; Konova, AA
      Characterization of inhomogeneous dielectric coatings with arbitrary refractive index profiles by multiple angle of incidence ellipsometry

      THIN SOLID FILMS
    50. Vergohl, M; Malkomes, N; Matthee, T; Brauer, G; Richter, U; Nickol, FW; Bruch, J
      In situ monitoring of optical coatings on architectural glass and comparison of the accuracy of the layer thickness attainable with ellipsometry and photometry

      THIN SOLID FILMS
    51. Vazsonyi, E; Szilagyi, E; Petrik, P; Horvath, ZE; Lohner, T; Fried, M; Jalsovszky, G
      Porous silicon formation by stain etching

      THIN SOLID FILMS
    52. Hermann, AM; Gonzalez, C; Ramakrishnan, PA; Balzar, D; Marshall, CH; Hilfiker, JN; Tiwald, T
      Growth and characterization of large area Cu(In,Ga)Se-2 films

      THIN SOLID FILMS
    53. Moritani, A; Kitahara, K; Kitamura, T; Katayama, H; Kanayama, N; Suzuki, M
      In situ spectroscopic ellipsometry of carbon nucleation and growth on Si in a deposition process by DC glow discharge of methane

      THIN SOLID FILMS
    54. Xu, W; Wood, LT; Golding, TD
      An ellipsometric method for the determination of the dielectric tensor of an optically uniaxial material suited for in-situ measurements

      THIN SOLID FILMS
    55. Franquet, A; De Laet, J; Schram, T; Terryn, H; Subramanian, V; van Ooij, WJ; Vereecken, J
      Determination of the thickness of thin silane films on aluminium surfaces by means of spectroscopic ellipsometry

      THIN SOLID FILMS
    56. Losurdo, M; Barreca, D; Bruno, G; Tondello, E
      Spectroscopic ellipsometry investigation of V2O5 nanocrystalline thin films

      THIN SOLID FILMS
    57. Petrik, P; Lehnert, W; Schneider, C; Lohner, T; Fried, M; Gyulai, J; Ryssel, H
      In situ measurement of the crystallization of amorphous silicon in a vertical furnace using spectroscopic ellipsometry

      THIN SOLID FILMS
    58. Modreanu, M; Tomozeiu, N; Gartner, M; Cosmin, P
      Microstructural and optical properties of as-deposited LPCVD silicon films

      THIN SOLID FILMS
    59. Flueraru, C; Gartner, M; Buiu, O; Radoi, R; Cernica, I; Imperia, P; Schrader, S
      Spectroellipsometric investigation of optical properties of SiO2 grown by wet thermal oxidation

      SURFACE SCIENCE
    60. Bosch, S; Ferre-Borrull, J; Sancho-Parramon, J
      A general-purpose software for optical characterization of thin films: specific features for microelectronic applications

      SOLID-STATE ELECTRONICS
    61. Bahng, JH; Jang, MS; Lee, M; Choi, JC; Park, HL; Kim, KJ; Lee, C
      Strain dependence and deformation potential of the E-1 and E-1+Delta(1) transitions of ZnTe grown on a GaAs (001) substrate

      SOLID STATE COMMUNICATIONS
    62. Djurisic, AB; Li, EH
      The optical dielectric function: Excitonic effects at E-0 critical point

      JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN
    63. Djurisic, AB; Li, EH
      Modeling the optical constants of ternary alloys using modified oscillatormodel: Application to AlxGa1-xN

      PHYSICA STATUS SOLIDI A-APPLIED RESEARCH
    64. Djurisic, AB; Guo, WL; Li, EH; Lam, LSM; Chan, WK; Adachi, S; Liu, ZT; Kwok, HS
      Optical properties of doped polycarbonate layers

      OPTICS COMMUNICATIONS
    65. Khasanov, T; Mardezhov, AS; Yanovskaya, SG; Kachurin, GA; Kaitasov, O
      Ellipsometric studies of annealing of SiO2 layers during the formation of light-emitting Si nanocrystals in them

      OPTICS AND SPECTROSCOPY
    66. Ayupov, BM; Prokhorova, SA
      Optical anisotropy of phthalocyanine films

      OPTICS AND SPECTROSCOPY
    67. Jansson, R; Zangooie, S; Kugler, T; Arwin, H
      Optical and microstructural characterization of thin films of photochromicfulgides

      JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS
    68. Balmer, RS; Pickering, C; Kier, AM; Birbeck, JCH; Saker, M; Martin, T
      In situ optical monitoring of AlGaN thickness and composition during MOVPEgrowth of AlGaN/GaN microwave HFETs

      JOURNAL OF CRYSTAL GROWTH
    69. Patsalas, P; Logothetidis, S
      Optical, electronic, and transport properties of nanocrystalline titanium nitride thin films

      JOURNAL OF APPLIED PHYSICS
    70. Paillard, V; Puech, P; Sirvin, R; Hamma, S; Cabarrocas, PRI
      Measurement of the in-depth stress profile in hydrogenated microcrystalline silicon thin films using Raman spectrometry

      JOURNAL OF APPLIED PHYSICS
    71. Yu, J; Sun, JL; Meng, XJ; Huang, ZM; Chu, JH; Tang, DY; Jin, CY; Li, G; Li, WY; Liang, Q
      Ultraviolet-infrared optical properties of highly (100)-oriented LaNiO3 thin films on Pt-Ti-SiO2-Si wafer

      JOURNAL OF APPLIED PHYSICS
    72. Lee, H; Kim, SM; Park, YJ; Kim, EK
      Ellipsometric study of InAs wetting layer in InAs/GaAs quantum dots at thethreshold of quantum dot formation

      JOURNAL OF APPLIED PHYSICS
    73. Petrovsky, V; Gorman, BP; Anderson, HU; Petrovsky, T
      Optical properties of CeO2 films prepared from colloidal suspension

      JOURNAL OF APPLIED PHYSICS
    74. Zollner, S
      Optical constants and critical-point parameters of GaAs from 0.73 to 6.60 eV

      JOURNAL OF APPLIED PHYSICS
    75. Leibiger, G; Gottschalch, V; Rheinlander, B; Sik, J; Schubert, M
      Model dielectric function spectra of GaAsN for far-infrared and near-infrared to ultraviolet wavelengths

      JOURNAL OF APPLIED PHYSICS
    76. Tisch, U; Meyler, B; Katz, O; Finkman, E; Salzman, J
      Dependence of the refractive index of AlxGa1-xN on temperature and composition at elevated temperatures

      JOURNAL OF APPLIED PHYSICS
    77. Wagner, J; Obloh, H; Kunzer, M; Maier, M; Kohler, K; Johs, B
      Dielectric function spectra of GaN, AlGaN, and GaN/AlGaN heterostructures

      JOURNAL OF APPLIED PHYSICS
    78. Gerbi, JE; Abelson, JR
      Deposition of microcrystalline silicon: Direct evidence for hydrogen-induced surface mobility of Si adspecies

      JOURNAL OF APPLIED PHYSICS
    79. Miyazaki, T; Fujimaki, T; Adachi, S; Ohtsuka, K
      Properties of GaN films deposited on Si(111) by radio-frequency-magnetron sputtering

      JOURNAL OF APPLIED PHYSICS
    80. Kamiya, T; Nakahata, K; Tan, YT; Durrani, ZAK; Shimizu, I
      Growth, structure, and transport properties of thin (> 10 nm) n-type microcrystalline silicon prepared on silicon oxide and its application to single-electron transistor

      JOURNAL OF APPLIED PHYSICS
    81. Djurisic, AB; Li, EH
      Dielectric function models for describing the optical properties of hexagonal GaN

      JOURNAL OF APPLIED PHYSICS
    82. Ivanova, T; Szekeres, A; Gartner, M; Gogova, D; Gesheva, KA
      Spectroscopic characterization of CVD-molybdenum oxide films

      ELECTROCHIMICA ACTA
    83. Hu, YZ; Sharangpani, R; Tay, SP
      In situ rapid thermal oxidation and reduction of copper thin films and their applications in ultralarge scale integration

      JOURNAL OF THE ELECTROCHEMICAL SOCIETY
    84. Otero, L; Vettorazzi, N; Sereno, L
      Loss and recovery of faradaic response on glassy carbon electrodes - Effect of electrochemical pretreatments on oxide layer properties

      JOURNAL OF THE ELECTROCHEMICAL SOCIETY
    85. Snow, ES; Campbell, PM; Twigg, M; Perkins, FK
      Ultrathin PtSi layers patterned by scanned probe lithography

      APPLIED PHYSICS LETTERS
    86. Wang, ZC; Kugler, V; Helmersson, U; Konofaos, N; Evangelou, EK; Nakao, S; Jin, P
      Electrical properties of SrTiO3 thin films on Si deposited by magnetron sputtering at low temperature

      APPLIED PHYSICS LETTERS
    87. Kreuter, A; Wagner, G; Otte, K; Lippold, G; Schindler, A; Schubert, M
      Anisotropic dielectric function spectra from single-crystal CuInSe2 with orientation domains

      APPLIED PHYSICS LETTERS
    88. Lindquist, OPA; Jarrendahl, K; Peters, S; Zettler, JT; Cobet, C; Esser, N; Aspnes, DE; Henry, A; Edwards, NV
      Ordinary and extraordinary dielectric functions of 4H-and 6H-SiC from 3.5 to 9.0 eV

      APPLIED PHYSICS LETTERS
    89. Zangooie, S; Schubert, M; Trimble, C; Thompson, DW; Woollam, JA
      Infrared ellipsometry characterization of porous silicon Bragg reflectors

      APPLIED OPTICS
    90. Hwang, Y; Kim, H; Chung, M; Um, Y; Park, H; Yoo, P
      Spectroscopic ellipsometry studies of Cd1-xMnxTe films grown on GaAs

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    91. Kim, SY; Kim, SJ; Lim, H; Lah, SM; Park, YD; Jeong, TH; Seo, H
      Spectro-ellipsometry investigation of cascaded crystallization behavior ofphase-change Ge-Sb-Te alloy

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    92. Jeong, TH; Seo, H; Lee, KL; Choi, SM; Kim, SJ; Kim, SY
      Study of oxygen-doped GeSbTe film and its effect as an interface layer on the recording properties in the blue wavelength

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    93. Katsuragawa, T
      Enhancement of the Faraday rotation

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    94. Djurisic, AB; Fritz, T; Leo, K
      Modelling the optical constants of organic thin films: impact of the choice of objective function

      JOURNAL OF OPTICS A-PURE AND APPLIED OPTICS
    95. Summonte, C; Rizzoli, R; Desalvo, A; Zignani, F; Centurioni, E; Pinghini, R; Bruno, G; Losurdo, M; Capezzuto, P; Gemmi, M
      Plasma-enhanced chemical vapour deposition of microcrystalline silicon: onthe dynamics of the amorphous-microcrystalline interface by optical methods

      PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICSELECTRONIC OPTICAL AND MAGNETIC PROPERTIES
    96. Fujiwara, H; Koh, J; Rovira, PI; Collins, RW
      Assessment of effective-medium theories in the analysis of nucleation and microscopic surface roughness evolution for semiconductor thin films

      PHYSICAL REVIEW B
    97. Lee, SJ; Hong, SY; Fisher, IR; Canfield, PC; Harmon, BN; Lynch, DW
      Optical properties and electronic structure of single crystals of EuAl2 and YbAl2

      PHYSICAL REVIEW B
    98. Lee, SJ; Lange, RJ; Canfield, PC; Harmon, BN; Lynch, DW
      Optical and magneto-optical properties of RFe2 (R=Gd,Tb,Ho,Lu) and GdCo2

      PHYSICAL REVIEW B
    99. Schubert, M; Tiwald, TE; Herzinger, CM
      Infrared dielectric anisotropy and phonon modes of sapphire

      PHYSICAL REVIEW B
    100. Cormier, G; Boudreau, R
      Genetic algorithm for ellipsometric data inversion of absorbing layers

      JOURNAL OF THE OPTICAL SOCIETY OF AMERICA A-OPTICS IMAGE SCIENCE AND VISION


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Documento generato il 29/10/20 alle ore 15:45:49