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La ricerca find articoli where soggetti phrase all words 'SILICON-GERMANIUM' sort by level,fasc_key/DESCEND, pagina_ini_num/ASCEND ha restituito 264 riferimenti
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    1. Vernon-Parry, KD; Abd-El-Rahman, KF; Brough, I; Evans-Freeman, JH; Zhang, J; Peaker, AR
      The use of electron back-scattered diffraction to study the regrowth of amorphised silicon-based heterostructures

      MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
    2. Akashi, T; Yonenaga, I; Gunjishima, I; Goto, T
      High temperature transport property of B- and P-doped GeSi single crystalsprepared by a Czochralski method

      MATERIALS TRANSACTIONS
    3. Myakov, V; Chudakova, V; Lopatin, M
      Some reactions of phthalocyanines of silicon, germanium and tin under alkaline conditions

      JOURNAL OF PORPHYRINS AND PHTHALOCYANINES
    4. Ponomarev, SV; Zolotareva, AS; Leont'ev, AS; Kuznetsov, YV; Petrosyan, VS
      Silylation and germylation of trialkylsilyl(germyl)ethoxyacetylenes containing bulky substituents at the silicon or germanium atom

      RUSSIAN CHEMICAL BULLETIN
    5. Li, BJ; Chua, SJ
      2 x 2 optical waveguide switch with bow-tie electrode based on carrier-injection total internal reflection in SiGe alloy

      IEEE PHOTONICS TECHNOLOGY LETTERS
    6. Budaguan, BG; Sherchenkov, AA; Gorbulin, GL; Chernomordic, VD
      The properties of a-SiGe : H films fabricated by a novel deposition method

      JOURNAL OF PHYSICS-CONDENSED MATTER
    7. Ichikawa, Y; Yoshida, T; Hama, T; Sakai, H; Harashima, K
      Production technology for amorphous silicon-based flexible solar cells

      SOLAR ENERGY MATERIALS AND SOLAR CELLS
    8. Osten, HJ; Knoll, D; Rucker, H
      Dopant diffusion control by adding carbon into Si and SiGe: principles anddevice application

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    9. Vernon-Parry, KD; Hawkins, ID; Evans-Freeman, JH; Dawson, P; Peaker, AR
      A comparison of the photoluminescence decay of erbium in silicon and silicon-germanium

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    10. Zeitler, U; Schumacher, HW; Haug, RJ; Jansen, AGM
      Transport anisotropies in a Si/SiGe heterostructure induced by an in-planemagnetic field

      PHYSICA B
    11. McAlister, SP; Storey, C; Kovacic, SJ; Lafontaine, H
      Tunneling at the emitter periphery in silicon-germanium HBTs

      IEICE TRANSACTIONS ON ELECTRONICS
    12. Kasahara, T; Kakimoto, Y; Fujita, A; Yamaguchi, T; Kato, H; Matsuno, N
      Self-aligned silicon-germanium base hetero-junction bipolar technology - UHS2

      NEC RESEARCH & DEVELOPMENT
    13. Baltazar-Rodrigues, J; Cusatis, C
      Determination of X-ray photoelectric absorption of Ge and Si avoiding solid-state effects

      NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
    14. Osten, HJ; Rucker, H; Liu, JP; Heinemann, B
      Wider latitude for sophisticated devices by incorporating carbon into crystalline Si or SiGe

      MICROELECTRONIC ENGINEERING
    15. Watanabe, A; Unno, M; Hojo, F; Miwa, T
      Silicon-germanium alloys prepared by the heat treatment of silicon substrate spin-coated with organo-soluble germanium cluster

      MATERIALS LETTERS
    16. Dalpian, GM; Fazzio, A; da Silva, AJR
      Theoretical STM images of Ge monomers and trimers on Si(100)

      SURFACE SCIENCE
    17. Taylor, N; Kim, H; Greene, JE
      Ge surface segregation during Si1-xGex(011) gas-source molecular beam epitaxy from Si2H6 and Ge2H6

      SURFACE SCIENCE
    18. Malm, BG; Johansson, T; Arnborg, T; Norstrom, H; Grahn, JV; Ostling, M
      Implanted collector profile optimization in a SiGeHBT process

      SOLID-STATE ELECTRONICS
    19. Huda, MQ; Peaker, AR
      Incorporation and optical activation of erbium in strained silicon-germanium structures

      SOLID-STATE ELECTRONICS
    20. Yousif, MYA; Nur, O; Willander, M
      Recent critical issues in Si/Si1-xGex/Si heterostructure FET devices

      SOLID-STATE ELECTRONICS
    21. Teh, LK; Choi, WK; Bera, LK; Chim, WK
      Structural characterisation of polycrystalline SiGe thin film

      SOLID-STATE ELECTRONICS
    22. Xiong, H; Zhang, XJ; Jiang, ZM; Hu, JH; Shi, B; Zhou, XF; Jiang, WR; Hu, DZ; Fan, YL
      Strain relaxation and misfit dislocation in SiGe epilayers grown in micronsize windows by MBE

      JOURNAL OF CRYSTAL GROWTH
    23. Peng, CS; Li, YK; Huang, Q; Zhou, JM
      The formation of dislocations in the interface of GeSi/low-temperature Si buffer grown on Si (001)

      JOURNAL OF CRYSTAL GROWTH
    24. Li, KC; Zhang, J; Liu, DG; Yi, Q; Guo, L; Xu, SL; Ni, WX
      MBE-based SiGe/Si heterojunction multilayer structures

      JOURNAL OF CRYSTAL GROWTH
    25. Re, M; Scalese, S; Mirabella, S; Terrasi, A; Priolo, F; Rimini, E; Berti, M; Coati, A; Drigo, A; Carnera, A; De Salvador, D; Spinella, C; La Mantia, A
      Structural characterisation and stability of Si1-xGex/Si(100) heterostructures grown by molecular beam epitaxy

      JOURNAL OF CRYSTAL GROWTH
    26. Gao, F; Lin, YX; Huang, DD; Li, JP; Sun, DZ; Kong, MY; Zeng, YP; Li, JM; Lin, LY
      Effects of annealing time and Si cap layer thickness on the Si/SiGe/Si heterostructures thermal stability

      JOURNAL OF CRYSTAL GROWTH
    27. Peng, CS; Kawanami, H; Li, YK; Li, GH; Huang, Q; Zhou, JM
      Study of Ge0.96Si0.04 epilayers grown on Si (001) at high temperature

      JOURNAL OF CRYSTAL GROWTH
    28. Irisawa, T; Ueno, T; Miura, H; Shiraki, Y
      Thermal stability of Ge channel modulation doped structures

      JOURNAL OF CRYSTAL GROWTH
    29. Guo, L; Li, KC; Liu, DG; Ou, YH; Zhang, J; Yi, Q; Xu, SL
      Reactive ion etching of Si1-xGex alloy with hydrogen bromide

      JOURNAL OF CRYSTAL GROWTH
    30. Azhdarov, GK; Kucukomeroglu, T; Varilci, A; Altunbas, M; Kobya, A; Azhdarov, PG
      Distribution of components in Ge-Si bulk single crystals grown under the continuous feeding of the melt with the second component (Si)

      JOURNAL OF CRYSTAL GROWTH
    31. Campbell, TA; Schweizer, M; Dold, P; Croll, A; Benz, KW
      Float zone growth and characterization of Ge1-xSix (x <= 10 at%) single crystals

      JOURNAL OF CRYSTAL GROWTH
    32. Segal, AS; Karpov, SY; Sid'ko, AP; Makarov, YN
      Quasi-thermodynamic model of SiGe epitaxial growth

      JOURNAL OF CRYSTAL GROWTH
    33. Azuma, Y; Usami, N; Ujihara, T; Sazaki, G; Murakami, Y; Miyashita, S; Fujiwara, K; Nakajima, K
      Growth of SiGe bulk crystal with uniform composition by directly controlling the growth temperature at the crystal-melt inter-face using in situ monitoring system

      JOURNAL OF CRYSTAL GROWTH
    34. Vogg, G; Miesner, C; Brandt, MS; Stutzmann, M; Abstreiter, G
      Epitaxial alloy films of zintl-phase Ca(Si1-xGex)(2)

      JOURNAL OF CRYSTAL GROWTH
    35. Roh, OH; Yun, WJ; Lee, JK
      Variation of spin densities and the solid-phase crystallization of amorphous Si1-xGex : H films

      JOURNAL OF APPLIED PHYSICS
    36. Anteney, IM; Parker, GJ; Ashburn, P; Kemhadjian, HA
      The role of carbon on the electrical properties of polycrystalline Si1-yCyand Si0.82-yGe0.18Cy films

      JOURNAL OF APPLIED PHYSICS
    37. Toshikiyo, K; Tokunaga, M; Takeoka, S; Fujii, M; Hayashi, S
      Electron spin resonance study of defects in Si1-xGex alloy nanocrystals embedded in SiO2 matrices: Mechanism of luminescence quenching

      JOURNAL OF APPLIED PHYSICS
    38. Dvurechenskii, AV; Zinov'ev, VA; Smagina, ZV
      Self-organization of an ensemble of Ge nanoclusters upon pulsed irradiation with low-energy ions during heteroepitaxy on Si

      JETP LETTERS
    39. Rajendran, K; Schoenmaker, W; Decoutere, S; Loo, R; Caymax, M; Vandervorst, W
      Measurement and simulation of boron diffusion in strained Si1-xGex epitaxial layers

      IEEE TRANSACTIONS ON ELECTRON DEVICES
    40. Huang, XJ; Lee, WC; Kuo, C; Hisamoto, D; Chang, LL; Kedzierski, J; Anderson, E; Takeuchi, H; Choi, YK; Asano, K; Subramanian, V; King, TJ; Bokor, J; Hu, CM
      Sub-50 nm p-channel FinFET

      IEEE TRANSACTIONS ON ELECTRON DEVICES
    41. Sedky, S; Witvrouw, A; Bender, H; Baert, K
      Experimental determination of the maximum post-process annealing temperature for standard CMOS wafers

      IEEE TRANSACTIONS ON ELECTRON DEVICES
    42. Harame, DL; Meyerson, BS
      The early history of IBM's SiGe mixed signal technology

      IEEE TRANSACTIONS ON ELECTRON DEVICES
    43. Ahn, TH; Yee, IS; Kim, TK; Joo, MS; Kim, HS; Kim, JJ; Joung, JH; Park, JW
      Effects of Ge content on the oxidation behavior of poly-Si1-xGex layers for gate electrode application

      JOURNAL OF THE ELECTROCHEMICAL SOCIETY
    44. Olivares, J; Sangrador, J; Rodriguez, A; Rodriguez, T
      Effect of deposition parameters on the characteristics of low-pressure chemical vapor deposited SiGe films grown from Si2H6 and GeH4

      JOURNAL OF THE ELECTROCHEMICAL SOCIETY
    45. Lim, YS; Jeong, JS; Lee, JY; Kim, HS; Shon, HK; Kim, HK; Moon, DW
      Dry thermal oxidation of a graded SiGe layer

      APPLIED PHYSICS LETTERS
    46. Delage, SL
      Heterojunction bipolar transistors for millimeter waves applications: Trends and achievements

      ANNALES DES TELECOMMUNICATIONS-ANNALS OF TELECOMMUNICATIONS
    47. Tezuka, T; Sugiyama, N; Mizuno, T; Suzuki, M; Takagi, S
      A novel fabrication technique of ultrathin and relaxed SiGe buffer layers with high Ge fraction for sub-100 run strained silicon-on-insulator MOSFETs

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    48. Huang, SY; Chen, KJ; Shi, JJ; Huang, XF; Xu, J; Ganguly, G; Matsuda, A
      Very high hydrogen dilution induced novel phenomena of electronic transport properties in hydrogenated microcrystalline silicon-germanium thin films prepared by plasma enhanced chemical vapor deposition method

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    49. Kanzawa, Y; Nozawa, K; Saitoh, T; Kubo, M
      Infrared absorption spectra of C local mode in Si1-x-yGexCy crystals

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    50. Fahy, S; Greer, JC
      Alloy corrections to the virtual crystal approximation and explicit band structure calculations for silicon-germanium

      MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
    51. Skotnicki, T
      Analysis of the silicon technology roadmap - How far can CMOS go?

      COMPTES RENDUS DE L ACADEMIE DES SCIENCES SERIE IV PHYSIQUE ASTROPHYSIQUE
    52. Paatsila, P; Stadius, K; Ryynanen, J; Halonen, K
      SiGe LNAs for UMTS system

      ANALOG INTEGRATED CIRCUITS AND SIGNAL PROCESSING
    53. Choi, WK; Bera, LK; Chen, JH; Feng, W; Pey, KL; Yoong, H; Mi, J; Zhang, F; Yang, CY
      Structural characterization of rapid thermally oxidized silicon-germanium-carbon alloy films

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    54. Berbezier, I; Abdallah, M; Ronda, A; Bremond, G
      Fabrication of self-organised Ge dots using self-patterned SiGe template layer

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    55. Jungemann, C; Keith, S; Meinerzhagen, B
      Full-band Monte Carlo device simulation of a Si/SiGe-HBT with a realistic Ge profile

      IEICE TRANSACTIONS ON ELECTRONICS
    56. Lee, CJ; Min, BD; Kim, SJ
      Effect of heavy in-situ phosphorus doping on Si1-xGex epitaxial growth by low-pressure chemical-vapor deposition

      JOURNAL OF THE KOREAN PHYSICAL SOCIETY
    57. Hartmann, JM; Gallas, B; Ferguson, R; Fernandez, J; Zhang, J; Harris, JJ
      Gas-source molecular beam epitaxy of SiGe virtual substrates: I. Growth kinetics and doping

      SEMICONDUCTOR SCIENCE AND TECHNOLOGY
    58. Ronda, A; Abdallah, M; Gay, JM; Stettner, J; Berbezier, I
      Kinetic evolution of self-organised SiGe nanostructures

      APPLIED SURFACE SCIENCE
    59. Simon, A; Csik, A; Paszti, F; Kiss, AZ; Beke, DL; Daroczi, L; Erdelyi, Z; Langer, GA
      Study of interdiffusion in amorphous Si/Ge multilayers by Rutherford backscattering spectrometry

      NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
    60. Dunford, RB; Paul, DJ; Pepper, M; Coonan, B; Griffin, N; Redmond, G; Crean, GM; Hollander, B; Mantl, S
      Si/Si1-xGex heterostructure field effect transistors fabricated using a low thermal budget CMOS process

      MICROELECTRONIC ENGINEERING
    61. Presting, H; Konle, J; Hepp, M; Kibbel, H; Thonke, K; Sauer, R; Corbin, E; Jaros, M
      Novel mid-infrared silicon/germanium detector concepts

      OPTICAL ENGINEERING
    62. Thompson, PE; Hobart, KD; Twigg, ME; Rommel, SL; Jin, N; Berger, PR; Lake, R; Seabaugh, AC; Chi, P
      Epitaxial Si-based tunnel diodes

      THIN SOLID FILMS
    63. Yamaguchi, S; Park, S; Sugii, N; Nakagawa, K; Miyao, M
      Ge-induced enhancement of solid-phase crystallization of Si on SiO2

      THIN SOLID FILMS
    64. Whall, TE; Parker, EHC
      Si/SiGe/Si pMOS performance - alloy scattering and other considerations

      THIN SOLID FILMS
    65. Dunford, RB; Griffin, N; Paul, DJ; Pepper, M; Robbins, DJ; Churchill, AC; Leong, WY
      Schottky gating high mobility Si/Si1-xGex 2D electron systems

      THIN SOLID FILMS
    66. Ahmed, A; Dunford, RB; Paul, DJ; Pepper, M; Churchill, AC; Robbins, DJ; Pidduck, AJ
      Si/SiGe n-type inverted modulation doping using ion implantation

      THIN SOLID FILMS
    67. Leong, WY; Churchill, AC; Robbins, DJ; Glasper, JL; Williams, GM
      A self-aligned epitaxially grown channel MOSFET device architecture for strained Si/SiGe systems

      THIN SOLID FILMS
    68. Li, BJ; Wan, JJ; Li, GZ; Jiang, ZM; Liu, EK; Wang, X
      Y-branch 1.3/1.55 mu m wavelength demultiplexer based on the plasma dispersion effect

      THIN SOLID FILMS
    69. Jelenkovic, EV; Tong, KY; Cheung, WY; Wilson, IH; Wong, SP; Poon, MC
      Low temperature doping of poly-SiGe films with boron by co-sputtering

      THIN SOLID FILMS
    70. Bonan, J; Meyer, F; Finkman, E; Warren, P; Boher, P
      Carbon dependence of the dielectric response function in epitaxial SiGeC layers grown on Si

      THIN SOLID FILMS
    71. Muller, P; Thomas, O
      Asymptotic behaviour of stress establishment in thin films

      SURFACE SCIENCE
    72. Goldfarb, I; Briggs, GAD
      Self-assembled metal-semiconductor compound nanocrystals on Group IV semiconductor surfaces

      SURFACE SCIENCE
    73. Bera, LK; Senapati, B; Maikap, S; Maiti, CK
      Effects of O-2/N2O-plasma treatment on nitride films on strained Si

      SOLID-STATE ELECTRONICS
    74. Rucker, H; Heinemann, B
      Tailoring dopant diffusion for advanced SiGe : C heterojunction bipolar transistors

      SOLID-STATE ELECTRONICS
    75. Malm, BG; Grahn, JV; Ostling, M
      Influence of transient enhanced diffusion of the intrinsic base dopant profile on SiGeHBT DC and HF characteristics

      SOLID-STATE ELECTRONICS
    76. Armigliato, A; Balboni, R; Frabboni, S; Rosa, R
      A novel Monte-Carlo based method for quantitative thin film X-ray microanalysis

      MIKROCHIMICA ACTA
    77. Berner, AI; Beregovsky, MY; Eizenberg, MM
      Quantitative analysis of Ti-Si-Ge/Si-Ge/Si structures by EDS and AES

      MIKROCHIMICA ACTA
    78. Lee, SH; So, MG
      Effects of deposition temperature and pressure of the surface roughness and the grain size of polycrystalline Si1-xGex films

      JOURNAL OF MATERIALS SCIENCE
    79. Suh, KY; Lee, HH
      Ge composition in Si1-xGex films grown from SiH2Cl2/GeH4 precursors

      JOURNAL OF APPLIED PHYSICS
    80. Lu, W; Kuliev, A; Koester, SJ; Wang, XW; Chu, JO; Ma, TP; Adesida, I
      High performance 0.1 mu m gate-length p-type SiGe MODFET's and MOS-MODFET's

      IEEE TRANSACTIONS ON ELECTRON DEVICES
    81. Soman, R; Reisman, A; Temple, D; Alberti, R
      Selective area chemical vapor deposition of Si1-xGex thin film alloys by the alternating cyclic method: Experimental data I. Deposition parameters

      JOURNAL OF THE ELECTROCHEMICAL SOCIETY
    82. Anteney, IM; Parker, GJ; Ashburn, P; Kemhadjian, HA
      Electrical properties of in situ phosphorus- and boron-doped polycrystalline SiGeC films

      APPLIED PHYSICS LETTERS
    83. Tacke, R; Heinrich, T; Kornek, T; Merget, M; Wagner, SA; Gross, J; Keim, C; Lambrecht, G; Mutschler, E; Beckers, T; Bernd, M; Reissmann, T
      Bioorganogermanium chemistry: Studies on C/Si/Ge bioisosterism

      PHOSPHORUS SULFUR AND SILICON AND THE RELATED ELEMENTS
    84. Li, BJ; Li, GZ; Liu, EK; Jiang, ZM; Qin, J; Wang, X
      Low-loss 1x2 multimode interference wavelength demultiplexer in silicon-germanium alloy

      IEEE PHOTONICS TECHNOLOGY LETTERS
    85. Harringa, JL; Cook, BA
      Application of hot isostatic pressing for consolidation of n-type silicon-germanium alloys prepared by mechanical alloying

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    86. Schumacher, H; Erben, U; Durr, W; Schad, KB
      Low-noise, low-power wireless frontend MMICs using SiGeHBTs

      IEICE TRANSACTIONS ON ELECTRONICS
    87. Boyanov, BI; Goeller, PT; Sayers, DE; Nemanich, RJ
      The effect of germanium on the Co-SiGe thin-film reaction

      JOURNAL OF SYNCHROTRON RADIATION
    88. Craciun, V; Boyd, IW; Perriere, J; Hutton, B; Nicholls, EJ
      Characteristics of dielectric layers formed by low-temperature vacuum ultraviolet-assisted oxidation of SiGe layers

      JOURNAL OF MATERIALS RESEARCH
    89. Lukevics, E; Pudova, O
      Molecular structure of organosilicon compounds with Si-M (M=Ge, Sn, Pb, Ti, Zr, Hf) bonds

      MAIN GROUP METAL CHEMISTRY
    90. Mathew, SJ; Niu, GF; Dubbelday, WB; Cressler, JD; Ott, JA; Chu, JO; Mooney, PM; Kavanagh, KL; Meyerson, BS; Lagnado, I
      Hole confinement and low-frequency noise in SiGe pFET's on silicon-on-sapphire

      IEEE ELECTRON DEVICE LETTERS
    91. Fujiwara, K; Toumori, Y; Mitsumata, H; Inada, M; Nakahara, T
      Determination of ultra-trace germanium on a silicon wafer by hydrofluoric acid vapor-decomposition microconcentric nebulizer-ICP-MS

      BUNSEKI KAGAKU
    92. Bera, LK; Ray, SK; Nayak, DK; Usami, N; Shiraki, Y; Maiti, CK
      Gas source molecular beam epitaxy grown strained-Si films on step-graded relaxed Si1-xGex for MOS applications

      JOURNAL OF ELECTRONIC MATERIALS
    93. Sharma, S; Caballero, N; Li, H; Pannell, KH
      The Si-Ge bond: Rearrangements, migrations, and cleavages

      ORGANOMETALLICS
    94. Tzoumanekas, C; Kelires, PC
      Effects of topological disorder on phase separation and local order in a-Si1-xGex alloys

      PHYSICAL REVIEW B-CONDENSED MATTER
    95. Aubry, JC; Tyliszczak, T; Hitchcock, AP; Baribeau, JM; Jackman, TE
      First-shell bond lengths in SixGe1-x crystalline alloys

      PHYSICAL REVIEW B-CONDENSED MATTER
    96. Bean, JC
      Growth techniques and procedures

      GERMANIUM SILICON: PHYSICS AND MATERIALS
    97. Kim, HS; Lee, JY
      Effect of substrate temperature on the texture and structure of polycrystalline Si0.7Ge0.3 films deposited on SiO2 by molecular beam deposition

      THIN SOLID FILMS
    98. Moriya, A; Sakuraba, M; Matsuura, T; Murota, J
      Doping and electrical characteristics of in situ heavily B-doped Si1-xGex films epitaxially grown using ultraclean LPCVD

      THIN SOLID FILMS
    99. Edelman, F; Raz, T; Komem, Y; Stolzer, M; Werner, P; Zaumseil, P; Osten, HJ; Griesche, J; Capitan, M
      Stability and transport properties of microcrystalline Si1-xGex films

      THIN SOLID FILMS
    100. Prabhakaran, K; Sumitomo, K; Ogino, T
      Oxidation of cobalt pre-reacted SiGe epilayer grown on Si(100)

      SURFACE SCIENCE


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Documento generato il 21/10/20 alle ore 23:35:55