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73. Keller, N; Pham-Huu, C; Ledoux, MJ
    Continuous process for selective oxidation of H2S over SiC-supported iron catalysts into elemental sulfur above its dewpoint
    APPLIED CATALYSIS A-GENERAL
    
    N. Keller et al., "Continuous process for selective oxidation of H2S over SiC-supported iron catalysts into elemental sulfur above its dewpoint", APP CATAL A, 217(1-2), 2001, pp. 205-217
74. Zhou, XT; Sun, SX; Peng, HY; Wang, N; Lee, CS; Bello, I; Lee, ST
    Epitaxial growth of beta-SiC on Si (100) by low energy ion beam deposition
    DIAMOND AND RELATED MATERIALS
    
    X.T. Zhou et al., "Epitaxial growth of beta-SiC on Si (100) by low energy ion beam deposition", DIAM RELAT, 10(9-10), 2001, pp. 1927-1931
75. Bruzzi, M; Nava, F; Russo, S; Sciortino, S; Vanni, P
    Characterisation of silicon carbide detectors response to electron and photon irradiation
    DIAMOND AND RELATED MATERIALS
    
    M. Bruzzi et al., "Characterisation of silicon carbide detectors response to electron and photon irradiation", DIAM RELAT, 10(3-7), 2001, pp. 657-661
76. Yakimova, R; Syvajarvi, M; Kakanakova-Georgieva, A; Janzen, E
    Stress related morphological defects in SiC epitaxial layers
    DIAMOND AND RELATED MATERIALS
    
    R. Yakimova et al., "Stress related morphological defects in SiC epitaxial layers", DIAM RELAT, 10(3-7), 2001, pp. 1246-1250
77. Catellani, A; Galli, G
    Defects at the carbon terminated SiC(001) surface
    DIAMOND AND RELATED MATERIALS
    
    A. Catellani e G. Galli, "Defects at the carbon terminated SiC(001) surface", DIAM RELAT, 10(3-7), 2001, pp. 1259-1263
78. Wang, YH; Lin, J; Huan, CHA; Feng, ZC; Chua, SJ
    Post-growth rapid thermal annealing effect on hydrogenated amorphous silicon carbide thin film
    DIAMOND AND RELATED MATERIALS
    
    Y.H. Wang et al., "Post-growth rapid thermal annealing effect on hydrogenated amorphous silicon carbide thin film", DIAM RELAT, 10(3-7), 2001, pp. 1268-1272
79. Reshanov, SA; Parfenova, II; Rastegaev, VP
    Group III-V impurities in beta-SiC: lattice distortions and solubility
    DIAMOND AND RELATED MATERIALS
    
    S.A. Reshanov et al., "Group III-V impurities in beta-SiC: lattice distortions and solubility", DIAM RELAT, 10(3-7), 2001, pp. 1278-1282
80. Ehara, T; Notake, K; Handa, K
    Paramagnetic defects in silicon carbide grains embedded in SiO2 matrix
    DIAMOND AND RELATED MATERIALS
    
    T. Ehara et al., "Paramagnetic defects in silicon carbide grains embedded in SiO2 matrix", DIAM RELAT, 10(3-7), 2001, pp. 1287-1290
81. Das, D; Farjas, J; Roura, P; Viera, G; Bertran, E
    Thermal oxidation of polymer-like amorphous SixCyHwOz nanoparticles
    DIAMOND AND RELATED MATERIALS
    
    D. Das et al., "Thermal oxidation of polymer-like amorphous SixCyHwOz nanoparticles", DIAM RELAT, 10(3-7), 2001, pp. 1295-1299
82. Reshanov, SA; Rastegaev, VP
    Photoconductivity of semi-insulating SiC : < V,Al >
    DIAMOND AND RELATED MATERIALS
    
    S.A. Reshanov e V.P. Rastegaev, "Photoconductivity of semi-insulating SiC : < V,Al >", DIAM RELAT, 10(11), 2001, pp. 2035-2038
83. Lee, WH; Lin, JC; Lee, C; Cheng, HC; Yew, TR
    A comparative study of Ar and H-2 as carrier gases for the growth of SiC films on Si(100) by electron cyclotron resonance chemical vapor deposition at low temperature
    DIAMOND AND RELATED MATERIALS
    
    W.H. Lee et al., "A comparative study of Ar and H-2 as carrier gases for the growth of SiC films on Si(100) by electron cyclotron resonance chemical vapor deposition at low temperature", DIAM RELAT, 10(11), 2001, pp. 2075-2083
84. Svenningstorp, H; Widen, B; Salomonsson, P; Ekedahl, LG; Lundstrom, I; Tobias, P; Spetz, AL
    Detection of HC in exhaust gases by an array of MISiC sensors
    SENSORS AND ACTUATORS B-CHEMICAL
    
    H. Svenningstorp et al., "Detection of HC in exhaust gases by an array of MISiC sensors", SENS ACTU-B, 77(1-2), 2001, pp. 177-185
85. Cros, B; Ferrandis, JY; Despaux, G
    Characterization of the chemical bond in novel materials by the study of the acoustic signature
    SENSORS AND ACTUATORS B-CHEMICAL
    
    B. Cros et al., "Characterization of the chemical bond in novel materials by the study of the acoustic signature", SENS ACTU-B, 76(1-3), 2001, pp. 108-114
86. Schmid, U; Eickhoff, M; Richter, C; Krotz, G; Schmitt-Landsiedel, D
    Etching characteristics and mechanical properties of a-SiC : H thin films
    SENSORS AND ACTUATORS A-PHYSICAL
    
    U. Schmid et al., "Etching characteristics and mechanical properties of a-SiC : H thin films", SENS ACTU-A, 94(1-2), 2001, pp. 87-94
87. Laugere, F; Lubking, GW; Berthold, A; Bastemeijer, J; Vellekoop, MJ
    Downscaling aspects of a conductivity detector for application in on-chip capillary electrophoresis
    SENSORS AND ACTUATORS A-PHYSICAL
    
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88. Davies, IJ; Hamada, H
    Flexural properties of a hybrid polymer matrix composite containing carbonand silicon carbide fibres
    ADVANCED COMPOSITE MATERIALS
    
    I.J. Davies e H. Hamada, "Flexural properties of a hybrid polymer matrix composite containing carbonand silicon carbide fibres", ADV COM MAT, 10(1), 2001, pp. 77-96
89. Shi, ZL; Lee, J; Zhang, D; Lee, H; Gu, MY; Wu, RJ
    The passive-oxidized behavior of SiC particles and their jointing characteristics
    JOURNAL OF MATERIALS PROCESSING TECHNOLOGY
    
    Z.L. Shi et al., "The passive-oxidized behavior of SiC particles and their jointing characteristics", J MATER PR, 110(2), 2001, pp. 127-131
90. Huang, QW; Jin, ZH
    The high temperature oxidation behavior of reaction-bonded silicon carbide
    JOURNAL OF MATERIALS PROCESSING TECHNOLOGY
    
    Q.W. Huang e Z.H. Jin, "The high temperature oxidation behavior of reaction-bonded silicon carbide", J MATER PR, 110(2), 2001, pp. 142-145
91. Vetter, WM; Dudley, M
    Partial dislocations in the X-ray topography of as-grown hexagonal siliconcarbide crystals
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    
    W.M. Vetter e M. Dudley, "Partial dislocations in the X-ray topography of as-grown hexagonal siliconcarbide crystals", MAT SCI E B, 87(2), 2001, pp. 173-177
92. Lau, SP; Xu, XL; Shi, JR; Ding, XZ; Sun, Z; Tay, BK
    Dependences of amorphous structure on bias voltage and annealing in silicon-carbon alloys
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    
    S.P. Lau et al., "Dependences of amorphous structure on bias voltage and annealing in silicon-carbon alloys", MAT SCI E B, 85(1), 2001, pp. 20-24
93. Wang, SZ; He, JB
    Defects analysis in single crystalline 6H-SiC at different PVT growth stages
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    
    S.Z. Wang e J.B. He, "Defects analysis in single crystalline 6H-SiC at different PVT growth stages", MAT SCI E B, 83(1-3), 2001, pp. 8-12
94. Masri, P; Laridjani, MR; Breton, O; Averous, M
    Evaluation of SiC as a substrate material for nitride materials heteroepitaxy
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    
    P. Masri et al., "Evaluation of SiC as a substrate material for nitride materials heteroepitaxy", MAT SCI E B, 82(1-3), 2001, pp. 53-55
95. Muller, SG; Glass, RC; Hobgood, HM; Tsvetkov, VF; Brady, M; Henshall, D; Malta, D; Singh, R; Palmour, J; Carter, CH
    Progress in the industrial production of SiC substrates for semiconductor devices
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    
    S.G. Muller et al., "Progress in the industrial production of SiC substrates for semiconductor devices", MAT SCI E B, 80(1-3), 2001, pp. 327-331
96. Kalinina, E; Kossov, V; Shchukarev, A; Bratus, V; Pensl, G; Rendakova, S; Dmitriev, V; Hallen, A
    Material quality improvements for high voltage 4H-SiC diodes
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    
    E. Kalinina et al., "Material quality improvements for high voltage 4H-SiC diodes", MAT SCI E B, 80(1-3), 2001, pp. 337-341
97. Kuznetsov, N; Tsagaraki, K; Bauman, D; Morozov, A; Nikitina, I; Ivantsov, V; Zekentes, K
    Surface roughness studies on 4H-SiC layers grown by liquid phase epitaxy
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    
    N. Kuznetsov et al., "Surface roughness studies on 4H-SiC layers grown by liquid phase epitaxy", MAT SCI E B, 80(1-3), 2001, pp. 345-347
98. Wellmann, PJ; Bushevoy, S; Weingartner, R
    Evaluation of n-type doping of 4H-SiC and n-/p-type doping of 6H-SiC usingabsorption measurements
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    
    P.J. Wellmann et al., "Evaluation of n-type doping of 4H-SiC and n-/p-type doping of 6H-SiC usingabsorption measurements", MAT SCI E B, 80(1-3), 2001, pp. 352-356
99. Weingartner, R; Bickermann, M; Bushevoy, S; Hofmann, D; Rasp, M; Straubinger, TL; Wellmann, PJ; Winnacker, A
    Absorption mapping of doping level distribution in n-type and p-type 4H-SiC and 6H-SiC
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    
    R. Weingartner et al., "Absorption mapping of doping level distribution in n-type and p-type 4H-SiC and 6H-SiC", MAT SCI E B, 80(1-3), 2001, pp. 357-361
100. Vassilevski, K; Zekentes, K; Tsagaraki, K; Constantinidis, G; Nikitina, I
     Phase formation at rapid thermal annealing of Al/Ti/Ni ohmic contacts on 4H-SiC
     MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
     
     K. Vassilevski et al., "Phase formation at rapid thermal annealing of Al/Ti/Ni ohmic contacts on 4H-SiC", MAT SCI E B, 80(1-3), 2001, pp. 370-373