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La ricerca find articoli where soggetti phrase all words 'SILICON THIN-FILMS' sort by level,fasc_key/DESCEND, pagina_ini_num/ASCEND ha restituito 54 riferimenti
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    1. Kocka, J; Fejfar, A; Fojtik, P; Luterova, K; Pelant, I; Rezek, B; Stuchlikova, H; Stuchlik, J; Svrcek, V
      Charge transport in microcrystalline Si - the specific features

      SOLAR ENERGY MATERIALS AND SOLAR CELLS
    2. Shimizu, I
      Formation of stable Si network at low T-s by controlling chemical reactionat growing surface

      SOLAR ENERGY MATERIALS AND SOLAR CELLS
    3. Matsuura, D; Kamiya, T; Fortmann, CM; Simizu, I
      Microstructure control of very thin polycrystalline silicon layers on glass substrate by plasma enhanced CVD

      SOLAR ENERGY MATERIALS AND SOLAR CELLS
    4. Sato, H; Fukutani, K; Futako, W; Kamiya, T; Fortmann, CM; Shimizu, I
      High-quality narrow gap (similar to 1.52 eV) a-Si : H with improved stability fabricated by excited inert gas treatment

      SOLAR ENERGY MATERIALS AND SOLAR CELLS
    5. Xu, K; Shah, SI; Guerin, D
      Low temperature deposition and characterization of polycrystalline Si films on polymer substrates

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
    6. Berlind, T; Hellgren, N; Johansson, MP; Hultman, L
      Microstructure, mechanical properties, and wetting behavior of Si-C-N thinfilms grown by reactive magnetron sputtering

      SURFACE & COATINGS TECHNOLOGY
    7. Park, CJ; Cha, MJ; Lee, DS
      Determination of copper in uniformly-doped silicon thin films by isotope-dilution inductively coupled plasma mass spectrometry

      BULLETIN OF THE KOREAN CHEMICAL SOCIETY
    8. Reiche, R; Oswald, S; Wetzig, K
      XPS and factor analysis for investigation of sputter-cleaned surfaces of metal (Re, Ir, Cr)-silicon thin films

      APPLIED SURFACE SCIENCE
    9. Schropp, REI
      Status of Cat-CVD (Hot-Wire CVD) research in Europe

      THIN SOLID FILMS
    10. Orpella, A; Voz, C; Puigdollers, J; Dosev, D; Fonrodona, M; Soler, D; Bertomeu, J; Asensi, JM; Andreu, J; Alcubilla, R
      Stability of hydrogenated nanocrystalline silicon thin-film transistors

      THIN SOLID FILMS
    11. Irene, EA
      Ultra-thin SiO2 film studies: index, thickness, roughness and the initial oxidation regime

      SOLID-STATE ELECTRONICS
    12. Quintero, A; Libera, M; Cabral, C; Lavoie, C; Harper, JME
      Two-step codeposition process for enhanced C54-TiSi2 formation in the Ti-Si binary system

      JOURNAL OF APPLIED PHYSICS
    13. Koshka, Y; Mazzola, MS
      Effect of hydrogenation on Al-related photoluminescence in 6H-SiC

      APPLIED PHYSICS LETTERS
    14. Horita, S; Nakata, Y; Shimoyama, A
      Alignment of grain boundary in a Si film crystallized by a linearly polarized laser beam on a glass substrate

      APPLIED PHYSICS LETTERS
    15. Nakata, M; Inoue, K; Matsumura, M
      A new nucleation-site-control excimer-laser-crystallization method

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    16. Minagawa, Y; Yazawa, Y; Muramatsu, S
      Fabrication of (111)-oriented Si film with a Ni/Ti layer by metal induced crystallization

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    17. Stoger, M; Nelhiebel, M; Schattschneider, P; Schlosser, V; Breymesser, A; Jouffrey, B
      EELS microanalysis of polycrystalline silicon thin films for solar cells grown at low temperatures

      SOLAR ENERGY MATERIALS AND SOLAR CELLS
    18. Santana, G; Morales-Acevedo, A
      Optimization of PECVD SiN : H films for silicon solar cells

      SOLAR ENERGY MATERIALS AND SOLAR CELLS
    19. Lengsfeld, P; Nickel, NH; Fuhs, W
      Step-by-step excimer laser induced crystallization of a-Si : H

      APPLIED PHYSICS LETTERS
    20. Ostapenko, S
      Defect passivation using ultrasound treatment: fundamentals and application

      APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
    21. Miura, H; Ikeda, S
      Mechanical stress simulation for highly reliable deep-submicron devices

      IEICE TRANSACTIONS ON ELECTRONICS
    22. Mebarki, B; Sumiya, S; Yoshida, R; Ito, M; Hori, M; Goto, T; Samukawa, S; Tsukada, T
      Polycrystalline silicon film formation at low temperature using ultra-high-frequency plasma enhanced chemical vapor deposition

      MATERIALS LETTERS
    23. Aichmayr, G; Toet, D; Mulato, M; Santos, PV; Spangenberg, A; Christiansen, S; Albrecht, M; Strunk, HP
      Dynamics of lateral grain growth during the laser interference crystallization of a-Si

      JOURNAL OF APPLIED PHYSICS
    24. Kamiya, T; Nakahata, K; Ro, K; Fortmann, CM; Shimizu, I
      Comparison of microstructure and crystal structure of polycrystalline silicon exhibiting varied textures fabricated by microwave and very high frequency plasma enhanced chemical vapor deposition and their transport properties

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    25. Kamiya, T; Ro, K; Fortmann, CM; Shimizu, I
      Role of seed crystal layer in two-step-growth procedure for low temperature growth of polycrystalline silicon thin film from SiF4 by a remote-type microwave plasma enhanced chemical vapor deposition

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    26. Jana, M; Das, D; Kshirsagar, ST; Barua, AK
      Control of crystallization at low thickness in mu c-Si : H films using layer-by-layer growth scheme

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    27. RAJAN N; ZORMAN CA; MEHREGANY M; DEANNA R; HARVEY R
      PERFORMANCE OF 3C-SIC THIN-FILMS AS PROTECTIVE COATINGS FOR SILICON-MICROMACHINED ATOMIZERS

      Thin solid films
    28. AICHMAYR G; TOET D; MULATO M; SANTOS PV; SPANGENBERG A; CHRISTIANSEN S; ALBRECHT M; STRUNK HP
      LATERAL GRAIN-GROWTH DURING THE LASER INTERFERENCE CRYSTALLIZATION OFA-SI

      Physica status solidi. a, Applied research
    29. CHOI DJ; KIM YH; HAN DW; BAIK HK; KIM SI
      FORMATION OF POLYCRYSTALLINE SILICON FILMS ON GLASS SUBSTRATES AT LOW-TEMPERATURES BY A DIRECT NEGATIVE SI ION-BEAM DEPOSITION SYSTEM

      Journal of crystal growth
    30. ZHAO YW; LI ZM; HE SQ; LIAO XB; SHENG SR; DENG LS; MA ZX
      POLYCRYSTALLINE SILICON THIN-FILMS AND SOLAR-CELLS PREPARED BY RAPID THERMAL CVD

      Solar energy materials and solar cells
    31. CARRILLOLOPEZ J; MORALESACEVEDO A
      CHARACTERIZATION OF THE OXIDATION RATE OF DENSIFIED SIN THIN-FILMS BYAUGER AND INFRARED-ABSORPTION SPECTROSCOPIES

      Thin solid films
    32. WANG JH; KIM DH
      NUMERICAL-ANALYSIS OF MELT SOLID INTERFACE SHAPE IN ZONE-MELTING RECRYSTALLIZATION PROCESS/

      Journal of crystal growth
    33. PINNADUWAGE LA; DATSKOS PG
      ELECTRON-ATTACHMENT TO EXCITED-STATES OF SILANE - IMPLICATIONS FOR PLASMA PROCESSING DISCHARGES

      Journal of applied physics
    34. KAWASE M; NAKAI T; YAMAGUCHI A; HAKOZAKI T; HASHIMOTO K
      NUMERICAL-SIMULATION OF PLASMA CHEMICAL-VAPOR-DEPOSITION FROM SILANE - EFFECTS OF THE PLASMA-SUBSTRATE DISTANCE AND HYDROGEN DILUTION

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    35. PARTHA C; KUMAR DU
      ARGON ASSISTED PLASMA CHEMICAL-VAPOR-DEPOSITION OF AMORPHOUS-SILICON CARBIDE FILMS

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    36. DHEURLE FM
      INTERFACES IN SILICIDES

      Journal de physique. IV
    37. MONNA R; SLAOUI A; LACHIQ A; MULLER JC
      SILICON THIN-FILMS OBTAINED BY RAPID THERMAL ATMOSPHERIC-PRESSURE CHEMICAL-VAPOR-DEPOSITION

      Materials science & engineering. B, Solid-state materials for advanced technology
    38. CHVOJ Z; CHAB V; BORUSIK O
      THEORETICAL-MODELS OF FAST CRYSTALLIZATION OF A-SI THIN-FILMS

      Thermochimica acta
    39. ZHAO XW; NOMURA S; AOYAGI Y; SUGANO T
      FORMATION AND ELECTRONIC STATES OF SI NANOCRYSTALLITES IN AMORPHOUS SI

      Journal of non-crystalline solids
    40. LOUCHEV OA; OTANI S; ISHIZAWA Y
      THE INCORPORATION OF CONVECTION IN 1D MODELS OF FLOAT-ZONE AND TRAVELING SOLVENT TECHNIQUES

      Journal of crystal growth
    41. LOUCHEV OA; OTANI S; ISHIZAWA Y
      THERMAL-ANALYSIS OF FLOAT-ZONE TRAVELING SOLVENT CRYSTAL-GROWTH OF LAB6

      Journal of applied physics
    42. IWATA S; YAMAMOTO N; YANO F
      DETECTION OF ELECTRON-TRAP AND HOLE-TRAP IN SIO2 SI BY ESCA/

      Nippon Kinzoku Gakkaishi
    43. TAKAGI K; OHNISHI T; YOSHIKAWA K
      EFFECTS OF SI CONTENT ON RESISTIVITY IN S PUTTERED AL-TA-SI ALLOY THIN-FILMS

      Nippon Kinzoku Gakkaishi
    44. VANVLIET CM
      RESPONSIVITY AND NOISE IN ILLUSTRATIVE SOLID-STATE CHEMICAL SENSORS

      Sensors and actuators. B, Chemical
    45. MA Z; ALLEN LH; ALLMAN DDJ
      MICROSTRUCTURAL ASPECTS AND MECHANISM OF THE C49-TO-C54 POLYMORPHIC TRANSFORMATION IN TITANIUM DISILICIDE

      Journal of applied physics
    46. SHEN J; MANDELIS A; OTHONOS A; VANNIASINKAM J
      HIGH-RESOLUTION QUADRATURE PHOTOPYROELECTRIC SPECTROSCOPY OF A-SI-H THIN-FILMS DEPOSITED ON SILICON-WAFERS

      Applied spectroscopy
    47. AYRES JR; BROTHERTON SD; CLARENCE IR; DOBSON PJ
      PHOTOCURRENTS IN POLY-SI TFTS

      IEE proceedings. Part G. Circuits, devices and systems
    48. ROSS FM
      MATERIALS SCIENCE IN THE ELECTRON-MICROSCOPE

      MRS bulletin
    49. ZHANG YF; SONG ZZ; ZHANG FQ; CHEN GH
      THE PROPERTIES OF P-DOPED A-SIH FILMS UNDER HIGH-TEMPERATURE ANNEALING

      Physica status solidi. a, Applied research
    50. DAS D
      WIDE-BAND GAP SIH AT LOW H-CONTENT PREPARED BY INTERRUPTED GROWN AND H-PLASMA TREATMENT

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    51. DHEURLE FM; COTTE J; GAS P; GOLTZ G; STANIS C; THOMAS O
      DIFFUSION OF ELEMENTS IMPLANTED IN AMORPHOUS TITANIUM DISILICIDE

      Applied surface science
    52. SIMON J; FEURER R; REYNES A; MORANCHO R
      A MASS-SPECTROMETRY STUDY OF THE GAS PYROLYSIS OF PH3 AND A PH3 SI2H6MIXTURE/

      Journal of analytical and applied pyrolysis
    53. MERTENS PW; MAES HE
      STRESS IN THIN MICRO-ZONE-MOLTEN CRYSTALLINE SILICON FILMS ON SOLID SUBSTRATES

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    54. SHIN H; HASHIMOTO M; OKAMOTO K; MIYAZAKI S; HIROSE M
      HIGH-FLUIDITY DEPOSITION OF SILICON BY PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION USING SI2H6 OR SIH4

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS


ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 07/08/20 alle ore 05:51:35