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La ricerca find articoli where soggetti phrase all words 'SILICON EPITAXY' sort by level,fasc_key/DESCEND, pagina_ini_num/ASCEND ha restituito 79 riferimenti
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    1. Yuh, HK; Park, JW; Lim, SH; Hwang, KH; Yoon, E
      Low-temperature Si epitaxial growth on oxide patterned wafers by ultrahighvacuum electron cyclotron resonance chemical vapor deposition

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    2. Vescan, L
      SiGe nanostructures by selective epitaxy and self-assembling

      MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING
    3. Sasaki, K
      Fundamental properties of ECR plasma CVD and hydrogen-induced low temperature Si epitaxy

      THIN SOLID FILMS
    4. Harame, DL; Meyerson, BS
      The early history of IBM's SiGe mixed signal technology

      IEEE TRANSACTIONS ON ELECTRON DEVICES
    5. Abe, K; Yagi, S; Okabayashi, T; Yamada, A; Konagai, M
      Characterization of tensile strained Si1-yCy alloy grown by photo- and plasma chemical vapor deposition at very low temperature

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    6. Cleavelin, CR; Covington, BC; Larson, LA
      Front end of line considerations far progression beyond the 100 nm node ultrashallow junction requirements

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    7. Luo, GL; Lin, XF; Chen, PY; Tsian, PX
      High quality SiGe layer deposited by a new ultrahigh vacuum chemical vapordeposition system

      JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY
    8. Ritter, G; Harrington, J; Tillack, B; Morgenstern, T; Dietze, GR; Radzimski, ZJ
      Low temperature Si epitaxy in a vertical LPCVD batch reactor

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    9. Gao, JS; Wang, JL; Sakai, N; Iwanaga, K; Muraoka, K; Nakashima, H; Gao, DW; Furukawa, K
      Study of the effects of discharge conditions and substrate temperature on Si epitaxial deposition using sputtering-type electron cyclotron resonance plasma

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
    10. Jeon, B; Lee, C
      Removal of Fe impurities on the Si substrate using remote hydrogen plasma

      MATERIALS CHEMISTRY AND PHYSICS
    11. Oehme, M; Bauer, M; Parry, CP; Eifler, G; Kasper, E
      Carbon segregation in silicon

      THIN SOLID FILMS
    12. Oehme, M; Bauer, M; Grasby, T; Kasper, E
      A novel measurement method of segregating adlayers in MBE

      THIN SOLID FILMS
    13. Li, CP; McCann, PJ; Fang, XM
      Strain relaxation in PbSnSe and PbSe/PbSnSe layers grown by liquid-phase epitaxy on (100)-oriented silicon

      JOURNAL OF CRYSTAL GROWTH
    14. Copel, M
      Medium-energy ion scattering for analysis of microelectronic materials

      IBM JOURNAL OF RESEARCH AND DEVELOPMENT
    15. Gao, JS; Nakashima, H; Wang, J; Iwanaga, K; Nakashima, H; Ikeda, K; Furukawa, K; Muraoka, K
      Optimum discharge condition of DC bias electron cyclotron resonance plasmasputtering for high quality Si epitaxial growth

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    16. Shindo, W; Sakai, S; Tanaka, H; Zhong, CJ; Ohmi, T
      Low-temperature large-grain poly-Si direct deposition by microwave plasma enhanced chemical vapor deposition using SiH4/Xe

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
    17. Kwon, SK; Kim, DH; Baek, JT
      Silicon epitaxial film growth on silicon substrate exposed to UV-excited NF3/H-2 gas for native oxide removal

      JOURNAL OF CRYSTAL GROWTH
    18. King, SW; Nemanich, RJ; Davis, RF
      Dry ex situ cleaning processes for (0001)(Si) 6H-SiC surfaces

      JOURNAL OF THE ELECTROCHEMICAL SOCIETY
    19. Lai, JM; Chieng, WH; Lin, BC; Chin, A; Tsai, C
      The leakage current effect of thin gate oxides (2.4-2.7 nm) with in situ native oxide desorption

      JOURNAL OF THE ELECTROCHEMICAL SOCIETY
    20. King, SW; Nemanich, RJ; Davis, RF
      Wet chemical processing of (0001)(Si) 6H-SiC hydrophobic and hydrophilic surfaces

      JOURNAL OF THE ELECTROCHEMICAL SOCIETY
    21. Celik, SM; Ozturk, MC
      Low thermal budget surface preparation for selective epitaxy a study on process robustness

      JOURNAL OF THE ELECTROCHEMICAL SOCIETY
    22. Yasuda, T; Hwang, DS; Park, JW; Ikuta, K; Yamasaki, S; Tanaka, K
      Selective-area formation of Si microstructures using ultrathin SiO2 mask layers

      APPLIED PHYSICS LETTERS
    23. Abe, K; Watahiki, T; Yamada, A; Konagai, M
      Growth mechanism during silicon epitaxy by photochemical vapor deposition at low temperatures

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    24. Gao, JS; Nakashima, H; Sakai, N; Gao, DW; Wang, JL; Furukawa, K; Muraoka, K
      Growth of epitaxial silicon film at low temperature by using sputtering-type electron cyclotron resonance plasma

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    25. CHIN A; LIN BC; CHEN WJ; LIN YB; THAI C
      THE EFFECT OF NATIVE-OXIDE ON THIN GATE OXIDE INTEGRITY

      IEEE electron device letters
    26. CERS VA; BALLIK EA
      APPLICATION OF SELECTIVE EPITAXIAL-GROWTH IN MBE FOR SHORT-DURATION GATING SYSTEMS

      Thin solid films
    27. ABE K; WATAHIKI T; YAMADA A; KONAGAI M
      CHARACTERIZATION OF HYDROGEN IN EPITAXIAL SILICON FILMS GROWN AT VERY-LOW TEMPERATURES

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    28. USHIO J; NAKAGAWA K; MIYAO M; MARUIZUMI T
      SURFACE SEGREGATION BEHAVIORS OF B, GA, AND SB DURING SI MOLECULAR-BEAM EPITAXY - CALCULATION USING A FIRST-PRINCIPLES METHOD

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    29. BRAINARD RJ; PAULSON CA; SAULYS D; GAINES DF; KUECH TF; ELLIS AB
      MODULATION OF CADMIUM SELENIDE PHOTOLUMINESCENCE INTENSITY BY ADSORPTION OF SILAPENTANES AND CHLORINATED SILANES

      JOURNAL OF PHYSICAL CHEMISTRY B
    30. LEE IM; JANSONS A; TAKOUDIS CG
      EFFECTS OF WATER-VAPOR AND CHLORINE ON THE EPITAXIAL-GROWTH OF SI1-XGEX FILMS BY CHEMICAL-VAPOR-DEPOSITION - THERMODYNAMIC ANALYSIS

      Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena
    31. FEHRENBACHER M; RAUSCHER H; BEHM RJ
      DISSOCIATIVE ADSORPTION OF SIH2CL2 ON SI(111)7X7

      Zeitschrift für physikalische Chemie
    32. CAMPBELL SA
      CRITICAL-REVIEW OF THE EPITAXIAL-GROWTH OF SEMICONDUCTORS BY RAPID THERMAL CHEMICAL-VAPOR-DEPOSITION

      Materials science & engineering. R, Reports
    33. BANERJEE S
      LASER-ENHANCED EPITAXY OF SI AND SI-GE

      Materials science & engineering. B, Solid-state materials for advanced technology
    34. INO K; SHINOHARA T; USHIKI T; OHMI T
      ION ENERGY, ION FLUX, AND ION SPECIES EFFECTS ON CRYSTALLOGRAPHIC ANDELECTRICAL-PROPERTIES OF SPUTTER-DEPOSITED TA THIN-FILMS

      Journal of vacuum science & technology. A. Vacuum, surfaces, and films
    35. AHN TH; JEON HT; PARK M; LEE CM
      THE EFFECTS OF THE REMOTE H-PLASMA TREATMENTS ON THE TRANSITION METALLIC IMPURITIES CONTAMINATED ON THE SI SUBSTRATE

      Journal of the Korean Physical Society
    36. CHOE TH; KIM SJ; CHOI W; KIM HJ
      SOLID-PHASE EPITAXY OF AMORPHOUS SI FILMS BY SUPPRESSION OF SURFACE SIO2 LAYER FORMATION USING HEATING-UP UNDER SI2H6 GAS ENVIRONMENT

      Journal of the Korean Physical Society
    37. CHIN A; CHEN WJ; LIN BC; KAO JH; TSAI C; HUANG JCM
      ULTRATHIN N2O-OXIDE WITH ATOMICALLY FLAT INTERFACES

      Journal of the Electrochemical Society
    38. AHN T; PARK M; LEE C; PARK JW; JEON H
      THE REMOVAL OF INTENTIONALLY CONTAMINATED CU IMPURITIES ON SI SUBSTRATE USING REMOTE H-PLASMA TREATMENTS

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    39. FEHRENBACHER M; SPITZMULLER J; PITTER M; RAUSCHER H; BEHM RJ
      STRUCTURES ON SI(100)2X1 AT THE INITIAL-STAGES OF HOMOEPITAXY BY SIH4DECOMPOSITION

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    40. OSHIMA T; YAMADA A; KONAGAI M
      ANALYSIS OF H-2-DILUTION EFFECTS ON PHOTOCHEMICAL VAPOR-DEPOSITION OFSI THIN-FILMS

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    41. LAFONTAINE H; HOUGHTON DC; ELLIOT D; ROWELL NL; BARIBEAU JM; LAFRAMBOISE S; SPROULE GI; ROLFE SJ
      CHARACTERIZATION OF SI1-XGEX EPILAYERS GROWN USING A COMMERCIALLY AVAILABLE ULTRAHIGH-VACUUM CHEMICAL-VAPOR-DEPOSITION REACTOR

      Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena
    42. UTSUMI Y
      SYNCHROTRON RADIATION-EXCITED SI PHOTOEPITAXY USING GAS-SOURCE MBE

      Optoelectronics
    43. JEON H; CHOI H; AHN T
      THE REMOVAL OF METALLIC IMPURITIES WITH USING UV O-3 AND A HF CHEMICAL SOLUTION/

      Journal of the Korean Physical Society
    44. REGOLINI JL; MARGAIL J; BODNAR S; MAURY D; MORIN C
      SELECTIVE EPITAXIAL SI BASED LAYERS AND TISI2 DEPOSITION BY INTEGRATED CHEMICAL-VAPOR-DEPOSITION

      Applied surface science
    45. HAN JH; RHEE SW; MOON SH
      PYROLYSIS MECHANISM OF SILANES, DIFLUOROSILANE, AND THEIR MIXTURES

      Journal of the Electrochemical Society
    46. AHLGREN DC; GILBERT M; JENG SJ; MALINOWSKI J; NGUYENNGOC D; SCHONENBERG K; STEIN K; SUNDERLAND D; SOYUER M; MEYERSON B; HARAME D
      SI-GE HETEROJUNCTION BIPOLAR TECHNOLOGY FOR HIGH-SPEED INTEGRATED-CIRCUITS

      Canadian journal of physics
    47. CHIN A; LIN BC; CHEN WJ
      HIGH-QUALITY EPITAXIAL SI GROWN BY A SIMPLE LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITION AT 550-DEGREES-C

      Applied physics letters
    48. KIKUCHI J; NAGASAKA M; FUJIMURA S; YANO H; HORIIKE Y
      CLEANING OF SILICON SURFACES BY NF3-ADDED HYDROGEN AND WATER-VAPOR PLASMA DOWNSTREAM TREATMENT

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    49. DESPONT M; BELJAKOVIC G; STEBLER C; STAUFER U; VETTIGER P; DEROOIJ NF
      FABRICATION OF AN INTEGRATED SILICON-BASED LENS FOR LOW-ENERGY MINIATURIZED ELECTRON COLUMNS

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    50. NISHIMORI T; SAKAMOTO H; TAKAKUWA Y; KONO S
      METHANE ADSORPTION AND HYDROGEN ISOTHERMAL DESORPTION-KINETICS ON A C(001)-(1X1) SURFACE

      Journal of vacuum science & technology. A. Vacuum, surfaces, and films
    51. YAMADA A; OSHIMA T; KONAGAI M; TAKAHASHI K
      SELECTIVE SILICON EPITAXY BY PHOTOCHEMICAL VAPOR-DEPOSITION AT A VERY-LOW TEMPERATURE OF 160-DEGREES-C

      Journal of electronic materials
    52. BONAR JM; PARKER GJ
      SELECTIVE LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITION EPITAXY USING SILANEONLY FOR ADVANCED DEVICE APPLICATIONS

      Materials science and technology
    53. STRICKLAND B; ROLAND C
      LOW-TEMPERATURE GROWTH AND ION-ASSISTED DEPOSITION

      Physical review. B, Condensed matter
    54. CHOLLET F; ANDRE E; VANDERVORST W; CAYMAX M
      SI(100) EPITAXY BY LOW-TEMPERATURE UHV-CVD - AFM STUDY OF THE INITIAL-STAGES OF GROWTH

      Journal of crystal growth
    55. AKAZAWA H; UTSUMI Y
      REACTION-KINETICS IN SYNCHROTRON-RADIATION-EXCITED SI EPITAXY WITH DISILANE .2. PHOTOCHEMICAL-VAPOR DEPOSITION

      Journal of applied physics
    56. HARAME DL; COMFORT JH; CRESSLER JD; CRABBE EF; SUN JYC; MEYERSON BS; TICE T
      SI SIGE EPITAXIAL-BASE TRANSISTORS .1. MATERIALS, PHYSICS, AND CIRCUITS/

      I.E.E.E. transactions on electron devices
    57. CHUNG CH; RHEE SW; MOON SH
      EFFECT OF OXYGEN CONTAMINATION ON THE DEPOSITION AND ETCHING PROPERTIES OF SI-H-CL-O AND SI-H-F-O SYSTEMS

      Journal of the Electrochemical Society
    58. KING CA; JOHNSON RW; CHIU TY; SUNG JM; MORRIS MD
      SUPPRESSION OF ARSENIC AUTODOPING WITH RAPID THERMAL EPITAXY FOR LOW-POWER BIPOLAR COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR

      Journal of the Electrochemical Society
    59. SEDGWICK TO; GRUTZMACHER DA
      LOW-TEMPERATURE ATMOSPHERIC-PRESSURE CHEMICAL-VAPOR-DEPOSITION FOR EPITAXIAL-GROWTH OF SIGE BIPOLAR-TRANSISTORS

      Journal of the Electrochemical Society
    60. VESCAN L
      SELECTIVE EPITAXIAL-GROWTH OF SIGE ALLOYS - INFLUENCE OF GROWTH-PARAMETERS ON FILM PROPERTIES

      Materials science & engineering. B, Solid-state materials for advanced technology
    61. RUBLOFF GW; OFFENBERG M; LIEHR M
      INTEGRATED PROCESSING OF MOS GATE DIELECTRIC STRUCTURES

      IEEE transactions on semiconductor manufacturing
    62. PUNKKINEN R; IHANTOLA H; JOKINEN K; KUUSELA T; ARVELA H; HEDMAN HP; SAIKKU V
      MULTICHAMBER PROCESSOR FOR SMALL SEMICONDUCTOR LABORATORIES - THE FIRST RESULTS

      Physica scripta. T
    63. MEYERSOIN BS; SMAIL KE; HARAME DL; LEGOUES FK; STORK JMC
      UHVCVD GROWTH OF SI SIGE HETEROSTRUCTURES AND THEIR APPLICATIONS/

      Semiconductor science and technology
    64. MEYERSON BS
      ULTRAHIGH-VACUUM CVD PROCESS MAKES SIGE DEVICES

      Solid state technology
    65. MOHAJERZADEH S; SELVAKUMAR CR; BRODIE DE
      A LOW-TEMPERATURE ION-BEAM-ASSISTED DEPOSITION METHOD FOR REALIZING SIGE SI HETEROSTRUCTURES

      Solid-state electronics
    66. COPEL M; TROMP RM
      H-COVERAGE DEPENDENCE OF SI(001) HOMOEPITAXY

      Physical review letters
    67. BRAMBLETT TR; LU Q; HASAN MA; JO SK; GREENE JE
      SI(001)2X1 GAS-SOURCE MOLECULAR-BEAM EPITAXY FROM SI2H6 - GROWTH-KINETICS AND BORON DOPING

      Journal of applied physics
    68. NARUSAWA U
      SI DEPOSITION FROM CHLOROSILANES .1. DEPOSITION MODELING

      Journal of the Electrochemical Society
    69. URISU T; TAKAHASHI J; UTSUMI Y; AKUTSU T; KUCHITSU K
      SYNCHROTRON RADIATION-ASSISTED SI EPITAXIAL-GROWTH USING SI2H6 AND SIH2CL2 GASES - PROPERTIES IN THE LOW-TEMPERATURE REGION

      Journal of the Electrochemical Society
    70. COPEL M; CULBERTSON RJ; TROMP RM
      RELAXATION AND H-COVERAGE OF AMMONIUM FLUORIDE TREATED SI(111)

      Applied physics letters
    71. SHENG C; GONG D; WEI X; LU F; WANG QH; SUN HH; WANG X
      INTERFACIAL DEFECTS RELATED TO THE SUBSTRATE TREATMENT IN MOLECULAR-BEAM EPITAXIAL SILICON

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    72. LIAN S; FOWLER B; KRISHNAN S; JUNG L; LI C; MANNA I; SAMARA D; BANERJEE S
      PHOTO-ENHANCED CHEMICAL-VAPOR-DEPOSITION - SYSTEM-DESIGN CONSIDERATIONS

      Journal of vacuum science & technology. A. Vacuum, surfaces, and films
    73. RAUPP GB; LEVEDAKIS DA; CALE TS
      PREDICTING INTRAWAFER FILM THICKNESS UNIFORMITY IN AN ULTRALOW PRESSURE CHEMICAL-VAPOR-DEPOSITION REACTOR

      Journal of vacuum science & technology. A. Vacuum, surfaces, and films
    74. NING BMH; CROWELL JE
      THE EFFECT OF GERMANIUM ON THE DESORPTION OF HYDROGEN FROM SI(100)

      Surface science
    75. FUJINAGA K; KARASAWA T
      CHARACTERISTICS OF B-DOPED SI1-XGEX GROWTH-RATES BY CHEMICAL-VAPOR-DEPOSITION USING SI2H6, GEH4, AND B2H6 GASES

      Journal of the Electrochemical Society
    76. SEDGWICK TO; AGNELLO PD; GRUTZMACHER DA
      EFFECTS OF TRACE SURFACE OXIDATION IN LOW-TEMPERATURE EPITAXY-GROWN FROM DICHLOROSILANE

      Journal of the Electrochemical Society
    77. KIM KJ; SUEMITSU M; YAMANAKA M; MIYAMOTO N
      EFFECTS OF MIXING GERMANE IN SILANE GAS-SOURCE MOLECULAR-BEAM EPITAXY

      Applied physics letters
    78. USAMI K; KOBAYASHI N; MIYAUCHI A
      STUDY OF X-RAY REFLECTIVITY FROM SI FILM INTERFACE LAYER SI SUBSTRATEAND APPLICATION TO LOW-TEMPERATURE EPITAXIALLY GROWN SI SI SUBSTRATE/

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    79. MIYAZAKI T; ADACHI S
      SPECTROSCOPIC ELLIPSOMETRY STUDY OF SI SURFACES MODIFIED BY LOW-ENERGY AR-ION IRRADIATION()

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS


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Documento generato il 25/01/21 alle ore 13:17:03