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Journal of the Electrochemical Society
SI-GE HETEROJUNCTION BIPOLAR TECHNOLOGY FOR HIGH-SPEED INTEGRATED-CIRCUITS
Canadian journal of physics
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Applied physics letters
CLEANING OF SILICON SURFACES BY NF3-ADDED HYDROGEN AND WATER-VAPOR PLASMA DOWNSTREAM TREATMENT
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Journal of electronic materials
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Journal of applied physics
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I.E.E.E. transactions on electron devices
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Journal of the Electrochemical Society
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LOW-TEMPERATURE ATMOSPHERIC-PRESSURE CHEMICAL-VAPOR-DEPOSITION FOR EPITAXIAL-GROWTH OF SIGE BIPOLAR-TRANSISTORS
Journal of the Electrochemical Society
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Solid state technology
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Solid-state electronics
H-COVERAGE DEPENDENCE OF SI(001) HOMOEPITAXY
Physical review letters
SI(001)2X1 GAS-SOURCE MOLECULAR-BEAM EPITAXY FROM SI2H6 - GROWTH-KINETICS AND BORON DOPING
Journal of applied physics
SI DEPOSITION FROM CHLOROSILANES .1. DEPOSITION MODELING
Journal of the Electrochemical Society
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Journal of the Electrochemical Society
RELAXATION AND H-COVERAGE OF AMMONIUM FLUORIDE TREATED SI(111)
Applied physics letters
INTERFACIAL DEFECTS RELATED TO THE SUBSTRATE TREATMENT IN MOLECULAR-BEAM EPITAXIAL SILICON
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PREDICTING INTRAWAFER FILM THICKNESS UNIFORMITY IN AN ULTRALOW PRESSURE CHEMICAL-VAPOR-DEPOSITION REACTOR
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THE EFFECT OF GERMANIUM ON THE DESORPTION OF HYDROGEN FROM SI(100)
Surface science
CHARACTERISTICS OF B-DOPED SI1-XGEX GROWTH-RATES BY CHEMICAL-VAPOR-DEPOSITION USING SI2H6, GEH4, AND B2H6 GASES
Journal of the Electrochemical Society
EFFECTS OF TRACE SURFACE OXIDATION IN LOW-TEMPERATURE EPITAXY-GROWN FROM DICHLOROSILANE
Journal of the Electrochemical Society
EFFECTS OF MIXING GERMANE IN SILANE GAS-SOURCE MOLECULAR-BEAM EPITAXY
Applied physics letters
STUDY OF X-RAY REFLECTIVITY FROM SI FILM INTERFACE LAYER SI SUBSTRATEAND APPLICATION TO LOW-TEMPERATURE EPITAXIALLY GROWN SI SI SUBSTRATE/
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SPECTROSCOPIC ELLIPSOMETRY STUDY OF SI SURFACES MODIFIED BY LOW-ENERGY AR-ION IRRADIATION()
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