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La ricerca find articoli where soggetti phrase all words 'SILICON DIOXIDE' sort by level,fasc_key/DESCEND, pagina_ini_num/ASCEND ha restituito 1076 riferimenti
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    1. Lockwood, DJ; Grom, GF; Tsybeskov, L; Fauchet, PM; Labbe, HJ; McCaffrey, JP; White, B
      Self-organization and ordering in nanocrystalline Si/SiO2 superlattices

      PHYSICA E
    2. Bonoli, F; Godio, P; Borionetti, G; Falster, R
      Gate oxide integrity dependence on substrate characteristics and SiO2 thickness

      MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
    3. Afanas'ev, VV; Stesmans, A
      Hydrogen release related to hole injection into SiO2 layers on Si

      MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
    4. Lahdenpaa, E; Antikainen, O; Yliruusi, J
      Direct compression with silicified and non-silicified microcrystalline cellulose: study of some properties of powders and tablets

      STP PHARMA SCIENCES
    5. Kouvatsos, DN; Vamvakas, VE; Davazoglou, D
      Characterization and stressing properties of polysilicon TFTs utilizing oxide films deposited using TEOS

      JOURNAL DE PHYSIQUE IV
    6. Hu, YZ; Tay, SP
      Characterization of high-K dielectric ZrO2 films annealed by rapid thermalprocessing

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    7. Cho, HM; Lee, YW; Lee, IW; Moon, DW; Kim, BY; Kim, HJ; Kim, SY; Cho, YJ
      Comparison of the effective oxide thickness determined by ellipsometry with the result by medium energy ion scattering spectroscopy and high-resolution transmission electron microscopy

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    8. Karecki, S; Chatterjee, R; Pruette, L; Reif, R; Vartanian, V; Sparks, T; Beu, L; Novoselov, K
      Characterization of iodoheptafluoropropane as a dielectric etchant. I. Process performance evaluation

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    9. Lee, JH; Feng, WS; Juang, TC; Chang-Liao, KS
      Electric property improvement and boron penetration suppression in metal-oxidase-Si capacitors by amorphous-Si gate electrode and two-step nitridation

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    10. Baraban, AP; Miloglyadova, LV; Ter-Nersesyants, VI
      Electric field affects the charge state in ion-implanted Si-SiO2 structures

      TECHNICAL PHYSICS LETTERS
    11. Tyschenko, IE; Zhuravlev, KS; Vandyshev, EN; Misiuk, A; Yankov, RA; Rebohle, L; Skorupa, W
      Study of photoluminescence of SiOxNy films implanted with Ge+ ions and annealed under the conditions of hydrostatic pressure

      SEMICONDUCTORS
    12. Wang, PF; Ding, SJ; Zhang, W; Wang, JT; Lee, WW
      Effects of O-2 plasma treatment on the chemical and electric properties oflow-k SiOF films

      JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY
    13. Parviz, BA; Najafi, K
      A geometric etch-stop technology for bulk micromachining

      JOURNAL OF MICROMECHANICS AND MICROENGINEERING
    14. Shaganov, II; Perova, TS; Moore, RA; Berwick, K
      Spectroscopic characteristics of SiO and SiO2 solid films: Assignment and local field effect influence

      JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
    15. Vasilevskiy, MI; Rolo, AG; Gomes, MJM; Vikhrova, OV; Ricolleau, C
      Impact of disorder on optical phonons confined in CdS nano-crystallites embedded in a SiO2 matrix

      JOURNAL OF PHYSICS-CONDENSED MATTER
    16. Patcas, F; Buciuman, FC
      Investigations on formation and structure of MnOx/SiO2 catalysts

      ZEITSCHRIFT FUR PHYSIKALISCHE CHEMIE-INTERNATIONAL JOURNAL OF RESEARCH IN PHYSICAL CHEMISTRY & CHEMICAL PHYSICS
    17. Peng, TY; Chang, G; Wang, L; Jiang, ZC; Hu, B
      Slurry sampling fluorination assisted electrothermal vaporization-inductively coupled plasma-atomic emission spectrometry for the direct determination of metal impurities in aluminium oxide ceramic powders

      FRESENIUS JOURNAL OF ANALYTICAL CHEMISTRY
    18. Tyschenko, IE; Zhuravlev, KS; Vandyshev, EN; Misiuk, A; Rebohle, L; Skorupa, W; Yankov, RA; Popov, VP
      Enhancement of the intensity of violet and green photoluminescence from Ge+ ion-implanted SiOxNy films caused by hydrostatic pressure during annealing

      OPTICAL MATERIALS
    19. Weinert, A; Amirfeiz, P; Bengtsson, S
      Plasma assisted room temperature bonding for MST

      SENSORS AND ACTUATORS A-PHYSICAL
    20. Sander, D; Muller, J
      Selffocussing phase transmission grating for an integrated optical microspectrometer

      SENSORS AND ACTUATORS A-PHYSICAL
    21. Roland, RP; Bolle, M; Anderson, RW
      Low temperature photochemical vapor deposition of SiO2 using 172 nm Xe-2* excimer lamp radiation with three oxidant chemistries: O-2, H2O/O-2, and H2O2

      CHEMISTRY OF MATERIALS
    22. Pagey, MP; Schrimpf, RD; Galloway, KF; Nicklaw, CJ; Ikeda, S; Kamohara, S
      A hydrogen-transport-based interface-trap-generation model for hot-carriesreliability prediction

      IEEE ELECTRON DEVICE LETTERS
    23. Wang, B; Suehle, JS; Vogel, EM; Bernstein, JB
      Time-dependent breakdown of ultra-thin SiO2 gate dielectrics under pulsed biased stress

      IEEE ELECTRON DEVICE LETTERS
    24. Nakamura, M; Hori, M; Goto, T; Ito, M; Ishii, N
      Spatial distributions of the absolute CF and CF2 radical densities in high-density plasma employing low global warming potential fluorocarbon gases and precursors for film formation

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
    25. Wang, SB; Wendt, AE
      Ion bombardment energy and SiO2/Si fluorocarbon plasma etch selectivity

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
    26. Cho, BO; Hwang, SW; Lee, GR; Moon, SH
      Angular dependence of the redeposition rates during SiO2 etching in a CF4 plasma

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
    27. Rhallabi, A; Turban, G
      Study of the early stage of SiO2 growth by a TEOS-O-2 plasma mixture usinga three-dimensional Monte Carlo model

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
    28. Zhang, D; Kushner, MJ
      Investigations of surface reactions during C2F6 plasma etching of SiO2 with equipment and feature scale models

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
    29. Fitting, HJ; Schreiber, E; Kuhr; von Czarnowski, A
      Attenuation and escape depths of low-energy electron emission

      JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA
    30. Powell, CJ; Jablonski, A
      Effects of elastic-electron scattering on measurements of silicon dioxide film thicknesses by X-ray photoelectron spectroscopy

      JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA
    31. Kizil, H; Kim, G; Steinbruchel, C; Zhao, B
      TiN and TaN diffusion barriers in copper interconnect technology: Towards a consistent testing methodology

      JOURNAL OF ELECTRONIC MATERIALS
    32. Amjadi, H; Franz, CP
      An electret floppy disk for digital information storage

      JOURNAL OF ELECTROSTATICS
    33. Chen, TP; Tse, MS; Zeng, X; Fung, S
      On the switching behaviour of post-breakdown conduction in ultra-thin SiO2films

      SEMICONDUCTOR SCIENCE AND TECHNOLOGY
    34. Maikap, S; Ray, SK; Banerjee, SK; Maiti, CK
      Electrical properties of O-2/NO-plasma grown oxynitride films on partiallystrain compensated Si/Si1-x-yGexCy/Si heterolayers

      SEMICONDUCTOR SCIENCE AND TECHNOLOGY
    35. Beom-hoan, O; Kim, CW; Jo, SB; Park, SG
      The magnetization frequency dependence of enhanced inductively coupled plasma

      SURFACE & COATINGS TECHNOLOGY
    36. Shindo, M; Kawai, Y
      Measurements of negative ion density in O-2/Ar electron cyclotron resonance plasma

      SURFACE & COATINGS TECHNOLOGY
    37. Barranco, A; Yubero, F; Espinos, JP; Benitez, J; Gonzalez-Elipe, AR; Cotrino, J; Allain, J; Girardeau, T; Riviere, JP
      Room temperature synthesis of SiO2 thin films by ion beam induced and plasma enhanced CVD

      SURFACE & COATINGS TECHNOLOGY
    38. Cui, AL; Wang, TJ; Jin, Y; Sun, M
      Thermodynamic research on the coating process of silica nano film on titanate particles surface

      CHEMICAL JOURNAL OF CHINESE UNIVERSITIES-CHINESE
    39. Gracia, FF; Carrillo, J; Aceves, M; Calleja, W; Dominguez, C; Falcony, C
      Luminescence studies in thermal oxide films with Si implantation

      MODERN PHYSICS LETTERS B
    40. Chen, Y; Ran, GZ; Sun, YK; Wang, YB; Fu, JS; Chen, WT; Gong, YY; Wu, DX; Ma, ZC; Zong, WH; Qin, GG
      Effects of Si, Ge and Ar ion-implantation on EL from Au/Si-rich SiO2/p-Si structure

      NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
    41. Borodin, VA; Heinig, KH; Schmidt, B; Oswald, S
      Oxidation of Ge implanted into SiO2 layers: Modeling and XPS

      NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
    42. Tetelbaum, DI; Trushin, SA; Burdov, VA; Golovanov, AI; Revin, DG; Gaponova, DM
      The influence of phosphorus and hydrogen ion implantation on the photoluminescence of SiO2 with Si nanoinclusions

      NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
    43. Vogel, EM; Edelstein, MD; Suehle, JS
      Reliability of ultra-thin silicon dioxide under substrate hot-electron, substrate hot-hole and tunneling stress

      MICROELECTRONIC ENGINEERING
    44. Alam, A; Weir, B; Bude, J; Silverman, P; Ghetti, A
      A computational model for oxide breakdown: theory and experiments

      MICROELECTRONIC ENGINEERING
    45. Leroux, C; Ghibaudo, G; Reimbold, G; Clerc, R; Mathieu, S
      Extraction of oxide thickness in the nanometer range using C(V) characteristics

      MICROELECTRONIC ENGINEERING
    46. Borsoni, G; Le Roux, V; Laffitte, R; Kerdiles, S; Bechu, N; Vallier, L; Korwin-Pawlowski, ML; Vannuffel, C; Bertin, F; Vergnaud, C; Chabli, A; Wyon, C
      Dependence of ultra-thin SiO2 layers formation by ultra-slow single and multicharged ions on process conditions

      MICROELECTRONIC ENGINEERING
    47. Houssa, A; Afanas'ev, VV; Stesmans, A; Heyns, MM
      Defect generation in ultra-thin SiO2 gate layers and SiO2/ZrO2 gate stacksand the dispersive transport model

      MICROELECTRONIC ENGINEERING
    48. Kokkoris, G; Gogolides, E; Boudouvis, AG
      Simulation of fluorocarbon plasma etching SiO2 structures

      MICROELECTRONIC ENGINEERING
    49. Demkov, AA; Zhang, XD; Drabold, DA
      Towards a first-principles simulation and current-voltage characteristic of atomistic metal-oxide-semiconductor structures - art. no. 125306

      PHYSICAL REVIEW B
    50. Pacchioni, G; Frigoli, F; Ricci, D; Weil, JA
      Theoretical description of hole localization in a quartz Al center: The importance of exact electron exchange - art. no. 054102

      PHYSICAL REVIEW B
    51. Jones, CM; Zhao, J
      Determination of sub-2-nm SiO2 interlayer thickness using secondary ion mass spectrometry

      SURFACE AND INTERFACE ANALYSIS
    52. Christophorou, LG; Olthoff, JK
      Electron interactions with c-C4F8

      JOURNAL OF PHYSICAL AND CHEMICAL REFERENCE DATA
    53. Barranco, A; Yubero, F; Cotrino, J; Espinos, JP; Benitez, J; Rojas, TC; Allain, J; Girardeau, T; Reviere, JP; Gonzalez-Elipe, AR
      Low temperature synthesis of dense SiO2 thin films by ion beam induced chemical vapor deposition

      THIN SOLID FILMS
    54. Brenier, R; Gagnaire, A
      Densification and aging of ZrO2 films prepared by sol-gel

      THIN SOLID FILMS
    55. Liu, HD; Zhao, YP; Ramanath, G; Murarka, SP; Wang, GC
      Thickness dependent electrical resistivity of ultrathin (< 40 nm) Cu films

      THIN SOLID FILMS
    56. Lai, DF; Robertson, J; Milne, WI
      Plasma oxidation of silicon using an electron cyclotron wave resonance (ECWR) oxygen plasma

      THIN SOLID FILMS
    57. Ghetti, A; Bude, J; Liu, CT
      Insight into the relationship between hot electron degradation and substrate current in sub-0.1 mu m technologies

      SOLID-STATE ELECTRONICS
    58. Irene, EA
      Ultra-thin SiO2 film studies: index, thickness, roughness and the initial oxidation regime

      SOLID-STATE ELECTRONICS
    59. Rodriguez, R; Miranda, E; Nafria, M; Sune, J; Aymerich, X
      Two-step stress methodology for monitoring the gate oxide degradation in MOS devices

      SOLID-STATE ELECTRONICS
    60. Miranda, E; Sune, J; Rodriguez, R; Nafria, M; Aymerich, X
      Breakdown and anti-breakdown events in high-field stressed ultrathin gate oxides

      SOLID-STATE ELECTRONICS
    61. Ielmini, D; Spinelli, AS; Lacaita, AL; Martinelli, A; Ghidini, G
      A recombination- and trap-assisted tunneling model for stress-induced leakage current

      SOLID-STATE ELECTRONICS
    62. Meinertzhagen, A; Zander, D; Petit, C; Jourdain, M; Gogenheim, D
      Low voltage and temperature effects on SILC in stressed ultrathin oxide films

      SOLID-STATE ELECTRONICS
    63. Boyd, IW; Zhang, JY
      Photo-induced growth of dielectrics with excimer lamps

      SOLID-STATE ELECTRONICS
    64. Shimizu-Iwayama, T; Hama, T; Hole, DE; Boyd, IW
      Characteristic photoluminescence properties of Si nanocrystals in SiO2 fabricated by ion implantation and annealing

      SOLID-STATE ELECTRONICS
    65. Chakraborty, S; Lai, PT; Xu, JP; Chan, CL; Cheng, YC
      Interface properties of N2O-annealed SiC metal oxide semiconductor devices

      SOLID-STATE ELECTRONICS
    66. Ray, SK; Maikap, S; Samanta, SK; Banerjee, SK; Maiti, CK
      Charge trapping characteristics of ultrathin oxynitrides on Si/Si1-x-yGexCy/Si heterolayers

      SOLID-STATE ELECTRONICS
    67. Quddus, MT; DeMassa, TA; Schroder, DK; Sanchez, JJ
      Modeling of time dependence of hole current and prediction of Q(BD) and t(BD) for thin gate MOS devices based upon anode hole injection

      SOLID-STATE ELECTRONICS
    68. Mao, LF; Tan, CH; Xu, MZ
      Measurements of the widths of transition regions at Si-SiO2 interfaces in metal-oxide-semiconductor structures from quantum oscillations in Fowler-Nordheim tunneling current

      SOLID STATE COMMUNICATIONS
    69. Shindo, M; Kawai, Y
      Estimate of the negative-ion density in O-2/Ar ECR plasma utilizing ion acoustic waves

      JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN
    70. Orellana, W; da Silva, AJR; Fazzio, A
      O-2 diffusion in SiO2: Triplet versus singlet - art. no. 155901

      PHYSICAL REVIEW LETTERS
    71. Alexandrova, S; Szekeres, A
      Sputter-metallization-induced electronic defects in thermal SiO2

      PHYSICA STATUS SOLIDI A-APPLIED RESEARCH
    72. Pompl, T; Engel, C; Wurzer, H; Kerber, M
      Soft breakdown and hard breakdown in ultra-thin oxides

      MICROELECTRONICS RELIABILITY
    73. Teramoto, A; Umeda, H; Azamawari, K; Kobayashi, K; Shiga, K; Komori, J; Ohno, Y; Shigetomi, A
      Time-dependent dielectric breakdown of SiO2 films in a wide electric fieldrange

      MICROELECTRONICS RELIABILITY
    74. Gueorguiev, VK; Ivanov, TE; Dimitriadis, CA; Andreev, SK; Popova, LI
      Time-dependent-dielectric-breakdown of hydrogen implanted polyoxides

      MICROELECTRONICS JOURNAL
    75. Hoshino, T; Kurata, Y; Terasaki, Y; Susa, K
      Mechanism of polishing of SiO2 films by CeO2 particles

      JOURNAL OF NON-CRYSTALLINE SOLIDS
    76. Boizot, B; Petite, G; Ghaleb, D; Calas, G
      Dose, dose rate and irradiation temperature effects in beta-irradiated simplified nuclear waste glasses by EPR spectroscopy

      JOURNAL OF NON-CRYSTALLINE SOLIDS
    77. Goguenheim, D; Bravaix, A; Ananou, B; Trapes, C; Mondon, F; Reimbold, G
      Temperature and field dependence of stress induced leakage currents in very thin (< 5 nm) gate oxides

      JOURNAL OF NON-CRYSTALLINE SOLIDS
    78. Zander, D; Saigne, F; Petit, C; Meinertzhagen, A
      Electrical stress effects on ultrathin (2.3 nm) oxides

      JOURNAL OF NON-CRYSTALLINE SOLIDS
    79. Candelori, A; Paccagnella, A; Raggi, G; Wyss, J; Bisello, D; Ghidini, G
      High energy Si ion irradiation effects on 10 nm thick oxide MOS capacitors

      JOURNAL OF NON-CRYSTALLINE SOLIDS
    80. Croci, S; Plossu, C; Balland, B; Raynaud, C; Boivin, P
      Effect of some technological parameters on Fowler-Nordheim injection through tunnel oxides for non-volatile memories

      JOURNAL OF NON-CRYSTALLINE SOLIDS
    81. Herrera, JE; Balzano, L; Borgna, A; Alvarez, WE; Resasco, DE
      Relationship between the structure/composition of Co-Mo catalysts and their ability to produce single-walled carbon nanotubes by CO disproportionation

      JOURNAL OF CATALYSIS
    82. Yasuda, T; Nishizawa, M; Yamasaki, S
      Chemical vapor deposition of Si on chlorosilane-treated SiO2 surfaces. I. Suppression and enhancement of Si nucleation

      JOURNAL OF APPLIED PHYSICS
    83. Diaz-Guerra, C; Piqueras, J; Golubev, VG; Kurdyukov, DA; Pevtsov, AB
      Cathodoluminescence of electron irradiated opal-based nanocomposites

      JOURNAL OF APPLIED PHYSICS
    84. Khandelwal, A; Smith, BC; Lamb, HH
      Nitrogen incorporation in ultrathin gate dielectrics: A comparison of He/N2O and He/N-2 remote plasma processes

      JOURNAL OF APPLIED PHYSICS
    85. Lee, CG; Takeda, Y; Kishimoto, N; Umeda, N
      Surface morphology and structural changes in insulators induced by high-current 60 keV Cu- implantation

      JOURNAL OF APPLIED PHYSICS
    86. Mohaidat, JM
      Interference induced oscillations in the tunneling current through ultrathin gate insulators

      JOURNAL OF APPLIED PHYSICS
    87. Zhao, CZ; Zhang, JF; Groeseneken, G; Degraeve, R; Ellis, JN; Beech, CD
      Interface state generation after hole injection

      JOURNAL OF APPLIED PHYSICS
    88. Fujieda, S
      Charge centers induced in thermal SiO2 films by high electric field stressat 80 K

      JOURNAL OF APPLIED PHYSICS
    89. Diaz-Guerra, C; Kurdyukov, DA; Piqueras, J; Sokolov, VI; Zamoryanskaya, MV
      Defect and nanocrystal cathodoluminescence of synthetic opals infilled with Si and Pt

      JOURNAL OF APPLIED PHYSICS
    90. Hadjadj, A; Salace, G; Petit, C
      Fowler-Nordheim conduction in polysilicon (n(+))-oxide-silicon (p) structures: Limit of the classical treatment in the barrier height determination

      JOURNAL OF APPLIED PHYSICS
    91. Wilk, GD; Wallace, RM; Anthony, JM
      High-kappa gate dielectrics: Current status and materials properties considerations

      JOURNAL OF APPLIED PHYSICS
    92. Huang, CH; Hwu, JG
      Anomalous low-voltage tunneling current characteristics of ultrathin gate oxide (similar to 2 nm) after high-field stress

      JOURNAL OF APPLIED PHYSICS
    93. Stadele, M; Tuttle, BR; Hess, K
      Tunneling through ultrathin SiO2 gate oxides from microscopic models

      JOURNAL OF APPLIED PHYSICS
    94. Oikawa, T; Lee, CW; Kondo, Y; Shindo, D; Konno, K
      Evaluation of electron beam broadening due to the specimen in analytical electron microscopy

      JOURNAL OF THE JAPAN INSTITUTE OF METALS
    95. Candelori, A; Ceschia, M; Paccagnella, A; Wyss, J; Bisello, D; Ghidini, G
      Thin oxide degradation after high-energy ion irradiation

      IEEE TRANSACTIONS ON NUCLEAR SCIENCE
    96. Wang, Y; Neugroschel, A; Sah, CT
      Temperature dependence of surface recombination current in MOS transistors

      IEEE TRANSACTIONS ON ELECTRON DEVICES
    97. Teramoto, A; Kobayashi, K; Ohno, Y; Shigetomi, A
      Excess currents induced by hot hole injection and FN electron injection inthin SiO2 films

      IEEE TRANSACTIONS ON ELECTRON DEVICES
    98. Rasras, M; De Wolf, I; Groeseneken, G; Kaczer, B; Degraeve, R; Maes, HE
      Photo-carrier generation as the origin of Fowler-Nordheim-induced substrate hole current in thin oxides

      IEEE TRANSACTIONS ON ELECTRON DEVICES
    99. Kang, TK; Chen, MJ; Liu, CH; Chang, YJ; Fan, SK
      Numerical confirmation of inelastic trap-assisted tunneling (ITAT) as SILCmechanism

      IEEE TRANSACTIONS ON ELECTRON DEVICES
    100. Yamabe, K; Liao, K; Minemura, H; Murata, M
      Nonuniform distribution of trapped charges in electron injection stressed SiO2 films

      JOURNAL OF THE ELECTROCHEMICAL SOCIETY


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Documento generato il 22/01/21 alle ore 05:59:42