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Self-organization and ordering in nanocrystalline Si/SiO2 superlattices
PHYSICA E
Gate oxide integrity dependence on substrate characteristics and SiO2 thickness
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
Hydrogen release related to hole injection into SiO2 layers on Si
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
Direct compression with silicified and non-silicified microcrystalline cellulose: study of some properties of powders and tablets
STP PHARMA SCIENCES
Characterization and stressing properties of polysilicon TFTs utilizing oxide films deposited using TEOS
JOURNAL DE PHYSIQUE IV
Characterization of high-K dielectric ZrO2 films annealed by rapid thermalprocessing
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
Comparison of the effective oxide thickness determined by ellipsometry with the result by medium energy ion scattering spectroscopy and high-resolution transmission electron microscopy
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
Characterization of iodoheptafluoropropane as a dielectric etchant. I. Process performance evaluation
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
Electric property improvement and boron penetration suppression in metal-oxidase-Si capacitors by amorphous-Si gate electrode and two-step nitridation
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
Electric field affects the charge state in ion-implanted Si-SiO2 structures
TECHNICAL PHYSICS LETTERS
Study of photoluminescence of SiOxNy films implanted with Ge+ ions and annealed under the conditions of hydrostatic pressure
SEMICONDUCTORS
Effects of O-2 plasma treatment on the chemical and electric properties oflow-k SiOF films
JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY
A geometric etch-stop technology for bulk micromachining
JOURNAL OF MICROMECHANICS AND MICROENGINEERING
Spectroscopic characteristics of SiO and SiO2 solid films: Assignment and local field effect influence
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
Impact of disorder on optical phonons confined in CdS nano-crystallites embedded in a SiO2 matrix
JOURNAL OF PHYSICS-CONDENSED MATTER
Investigations on formation and structure of MnOx/SiO2 catalysts
ZEITSCHRIFT FUR PHYSIKALISCHE CHEMIE-INTERNATIONAL JOURNAL OF RESEARCH IN PHYSICAL CHEMISTRY & CHEMICAL PHYSICS
Slurry sampling fluorination assisted electrothermal vaporization-inductively coupled plasma-atomic emission spectrometry for the direct determination of metal impurities in aluminium oxide ceramic powders
FRESENIUS JOURNAL OF ANALYTICAL CHEMISTRY
Enhancement of the intensity of violet and green photoluminescence from Ge+ ion-implanted SiOxNy films caused by hydrostatic pressure during annealing
OPTICAL MATERIALS
Plasma assisted room temperature bonding for MST
SENSORS AND ACTUATORS A-PHYSICAL
Selffocussing phase transmission grating for an integrated optical microspectrometer
SENSORS AND ACTUATORS A-PHYSICAL
Low temperature photochemical vapor deposition of SiO2 using 172 nm Xe-2* excimer lamp radiation with three oxidant chemistries: O-2, H2O/O-2, and H2O2
CHEMISTRY OF MATERIALS
A hydrogen-transport-based interface-trap-generation model for hot-carriesreliability prediction
IEEE ELECTRON DEVICE LETTERS
Time-dependent breakdown of ultra-thin SiO2 gate dielectrics under pulsed biased stress
IEEE ELECTRON DEVICE LETTERS
Spatial distributions of the absolute CF and CF2 radical densities in high-density plasma employing low global warming potential fluorocarbon gases and precursors for film formation
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
Ion bombardment energy and SiO2/Si fluorocarbon plasma etch selectivity
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
Angular dependence of the redeposition rates during SiO2 etching in a CF4 plasma
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
Study of the early stage of SiO2 growth by a TEOS-O-2 plasma mixture usinga three-dimensional Monte Carlo model
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
Investigations of surface reactions during C2F6 plasma etching of SiO2 with equipment and feature scale models
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
Attenuation and escape depths of low-energy electron emission
JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA
Effects of elastic-electron scattering on measurements of silicon dioxide film thicknesses by X-ray photoelectron spectroscopy
JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA
TiN and TaN diffusion barriers in copper interconnect technology: Towards a consistent testing methodology
JOURNAL OF ELECTRONIC MATERIALS
An electret floppy disk for digital information storage
JOURNAL OF ELECTROSTATICS
On the switching behaviour of post-breakdown conduction in ultra-thin SiO2films
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
Electrical properties of O-2/NO-plasma grown oxynitride films on partiallystrain compensated Si/Si1-x-yGexCy/Si heterolayers
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
The magnetization frequency dependence of enhanced inductively coupled plasma
SURFACE & COATINGS TECHNOLOGY
Measurements of negative ion density in O-2/Ar electron cyclotron resonance plasma
SURFACE & COATINGS TECHNOLOGY
Room temperature synthesis of SiO2 thin films by ion beam induced and plasma enhanced CVD
SURFACE & COATINGS TECHNOLOGY
Thermodynamic research on the coating process of silica nano film on titanate particles surface
CHEMICAL JOURNAL OF CHINESE UNIVERSITIES-CHINESE
Luminescence studies in thermal oxide films with Si implantation
MODERN PHYSICS LETTERS B
Effects of Si, Ge and Ar ion-implantation on EL from Au/Si-rich SiO2/p-Si structure
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
Oxidation of Ge implanted into SiO2 layers: Modeling and XPS
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
The influence of phosphorus and hydrogen ion implantation on the photoluminescence of SiO2 with Si nanoinclusions
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
Reliability of ultra-thin silicon dioxide under substrate hot-electron, substrate hot-hole and tunneling stress
MICROELECTRONIC ENGINEERING
A computational model for oxide breakdown: theory and experiments
MICROELECTRONIC ENGINEERING
Extraction of oxide thickness in the nanometer range using C(V) characteristics
MICROELECTRONIC ENGINEERING
Dependence of ultra-thin SiO2 layers formation by ultra-slow single and multicharged ions on process conditions
MICROELECTRONIC ENGINEERING
Defect generation in ultra-thin SiO2 gate layers and SiO2/ZrO2 gate stacksand the dispersive transport model
MICROELECTRONIC ENGINEERING
Simulation of fluorocarbon plasma etching SiO2 structures
MICROELECTRONIC ENGINEERING
Towards a first-principles simulation and current-voltage characteristic of atomistic metal-oxide-semiconductor structures - art. no. 125306
PHYSICAL REVIEW B
Theoretical description of hole localization in a quartz Al center: The importance of exact electron exchange - art. no. 054102
PHYSICAL REVIEW B
Determination of sub-2-nm SiO2 interlayer thickness using secondary ion mass spectrometry
SURFACE AND INTERFACE ANALYSIS
Electron interactions with c-C4F8
JOURNAL OF PHYSICAL AND CHEMICAL REFERENCE DATA
Low temperature synthesis of dense SiO2 thin films by ion beam induced chemical vapor deposition
THIN SOLID FILMS
Densification and aging of ZrO2 films prepared by sol-gel
THIN SOLID FILMS
Thickness dependent electrical resistivity of ultrathin (< 40 nm) Cu films
THIN SOLID FILMS
Plasma oxidation of silicon using an electron cyclotron wave resonance (ECWR) oxygen plasma
THIN SOLID FILMS
Insight into the relationship between hot electron degradation and substrate current in sub-0.1 mu m technologies
SOLID-STATE ELECTRONICS
Ultra-thin SiO2 film studies: index, thickness, roughness and the initial oxidation regime
SOLID-STATE ELECTRONICS
Two-step stress methodology for monitoring the gate oxide degradation in MOS devices
SOLID-STATE ELECTRONICS
Breakdown and anti-breakdown events in high-field stressed ultrathin gate oxides
SOLID-STATE ELECTRONICS
A recombination- and trap-assisted tunneling model for stress-induced leakage current
SOLID-STATE ELECTRONICS
Low voltage and temperature effects on SILC in stressed ultrathin oxide films
SOLID-STATE ELECTRONICS
Photo-induced growth of dielectrics with excimer lamps
SOLID-STATE ELECTRONICS
Characteristic photoluminescence properties of Si nanocrystals in SiO2 fabricated by ion implantation and annealing
SOLID-STATE ELECTRONICS
Interface properties of N2O-annealed SiC metal oxide semiconductor devices
SOLID-STATE ELECTRONICS
Charge trapping characteristics of ultrathin oxynitrides on Si/Si1-x-yGexCy/Si heterolayers
SOLID-STATE ELECTRONICS
Modeling of time dependence of hole current and prediction of Q(BD) and t(BD) for thin gate MOS devices based upon anode hole injection
SOLID-STATE ELECTRONICS
Measurements of the widths of transition regions at Si-SiO2 interfaces in metal-oxide-semiconductor structures from quantum oscillations in Fowler-Nordheim tunneling current
SOLID STATE COMMUNICATIONS
Estimate of the negative-ion density in O-2/Ar ECR plasma utilizing ion acoustic waves
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN
O-2 diffusion in SiO2: Triplet versus singlet - art. no. 155901
PHYSICAL REVIEW LETTERS
Sputter-metallization-induced electronic defects in thermal SiO2
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH
Soft breakdown and hard breakdown in ultra-thin oxides
MICROELECTRONICS RELIABILITY
Time-dependent dielectric breakdown of SiO2 films in a wide electric fieldrange
MICROELECTRONICS RELIABILITY
Time-dependent-dielectric-breakdown of hydrogen implanted polyoxides
MICROELECTRONICS JOURNAL
Mechanism of polishing of SiO2 films by CeO2 particles
JOURNAL OF NON-CRYSTALLINE SOLIDS
Dose, dose rate and irradiation temperature effects in beta-irradiated simplified nuclear waste glasses by EPR spectroscopy
JOURNAL OF NON-CRYSTALLINE SOLIDS
Temperature and field dependence of stress induced leakage currents in very thin (< 5 nm) gate oxides
JOURNAL OF NON-CRYSTALLINE SOLIDS
Electrical stress effects on ultrathin (2.3 nm) oxides
JOURNAL OF NON-CRYSTALLINE SOLIDS
High energy Si ion irradiation effects on 10 nm thick oxide MOS capacitors
JOURNAL OF NON-CRYSTALLINE SOLIDS
Effect of some technological parameters on Fowler-Nordheim injection through tunnel oxides for non-volatile memories
JOURNAL OF NON-CRYSTALLINE SOLIDS
Relationship between the structure/composition of Co-Mo catalysts and their ability to produce single-walled carbon nanotubes by CO disproportionation
JOURNAL OF CATALYSIS
Chemical vapor deposition of Si on chlorosilane-treated SiO2 surfaces. I. Suppression and enhancement of Si nucleation
JOURNAL OF APPLIED PHYSICS
Cathodoluminescence of electron irradiated opal-based nanocomposites
JOURNAL OF APPLIED PHYSICS
Nitrogen incorporation in ultrathin gate dielectrics: A comparison of He/N2O and He/N-2 remote plasma processes
JOURNAL OF APPLIED PHYSICS
Surface morphology and structural changes in insulators induced by high-current 60 keV Cu- implantation
JOURNAL OF APPLIED PHYSICS
Interference induced oscillations in the tunneling current through ultrathin gate insulators
JOURNAL OF APPLIED PHYSICS
Interface state generation after hole injection
JOURNAL OF APPLIED PHYSICS
Charge centers induced in thermal SiO2 films by high electric field stressat 80 K
JOURNAL OF APPLIED PHYSICS
Defect and nanocrystal cathodoluminescence of synthetic opals infilled with Si and Pt
JOURNAL OF APPLIED PHYSICS
Fowler-Nordheim conduction in polysilicon (n(+))-oxide-silicon (p) structures: Limit of the classical treatment in the barrier height determination
JOURNAL OF APPLIED PHYSICS
High-kappa gate dielectrics: Current status and materials properties considerations
JOURNAL OF APPLIED PHYSICS
Anomalous low-voltage tunneling current characteristics of ultrathin gate oxide (similar to 2 nm) after high-field stress
JOURNAL OF APPLIED PHYSICS
Tunneling through ultrathin SiO2 gate oxides from microscopic models
JOURNAL OF APPLIED PHYSICS
Evaluation of electron beam broadening due to the specimen in analytical electron microscopy
JOURNAL OF THE JAPAN INSTITUTE OF METALS
Thin oxide degradation after high-energy ion irradiation
IEEE TRANSACTIONS ON NUCLEAR SCIENCE
Temperature dependence of surface recombination current in MOS transistors
IEEE TRANSACTIONS ON ELECTRON DEVICES
Excess currents induced by hot hole injection and FN electron injection inthin SiO2 films
IEEE TRANSACTIONS ON ELECTRON DEVICES
Photo-carrier generation as the origin of Fowler-Nordheim-induced substrate hole current in thin oxides
IEEE TRANSACTIONS ON ELECTRON DEVICES
Numerical confirmation of inelastic trap-assisted tunneling (ITAT) as SILCmechanism
IEEE TRANSACTIONS ON ELECTRON DEVICES
Nonuniform distribution of trapped charges in electron injection stressed SiO2 films
JOURNAL OF THE ELECTROCHEMICAL SOCIETY