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La ricerca find articoli where soggetti phrase all words 'SILICIDE' sort by level,fasc_key/DESCEND, pagina_ini_num/ASCEND ha restituito 870 riferimenti
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    1. Ohishi, N; Yanagisawa, H; Sasaki, K; Abe, Y
      Initial silicide formation process of Mo/(100) Si system prepared using anultrahigh-vacuum sputtering system

      ELECTRONICS AND COMMUNICATIONS IN JAPAN PART II-ELECTRONICS
    2. Liang, HH; Luo, JS; Lin, WT
      Room temperature oxidation of Cu3Ge and Cu-3(Si1-xGex) on Si1-xGex

      MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
    3. Chi, KS; Chen, LJ
      Formation of ytterbium silicide on (111) and (001)Si by solid-state reactions

      MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
    4. Wu, SK; Chen, JZ; Wu, YJ; Wang, JY; Yu, MN; Chen, FR; Kai, JJ
      Interfacial microstructures of rf-sputtered TiNi shape memory alloy thin films on (100) silicon

      PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS ANDMECHANICAL PROPERTIES
    5. Takeguchi, M; Tanaka, M; Yasuda, H; Furuya, K
      Reflection electron microscopy observation of formation process of palladium silicide islands on silicon (111) surface

      SCRIPTA MATERIALIA
    6. Shimozaki, T; Hirai, A; Okino, T; Lee, CG
      Reactive diffusion between ultra high purity iron and silicon wafer

      MATERIALS TRANSACTIONS
    7. Kaneno, Y; Wada, M; Inoue, H; Takasugi, T
      Effects of grain size and temperature on environmental embrittlement of Ni-3(Si, Ti) alloy

      MATERIALS TRANSACTIONS
    8. Han, BW; Rhee, HS; Ahn, BT
      Growth of in situ CoSi2 layer by metalorganic chemical vapor deposition onSi tips and its field-emission properties

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    9. Maeda, K
      Mechanism of nonideality in nearly ideal Si Schottky barriers

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    10. Gomoyunova, MV; Pronin, II; Valdaitsev, DA; Faradzhev, NS
      Reactive epitaxy of cobalt disilicide on Si(111)

      PHYSICS OF THE SOLID STATE
    11. Inui, H; Yamaguchi, M
      Deformation mechanisms of transition-metal disilicides with the hexagonal C40 structure

      INTERMETALLICS
    12. Dumont, AL; Bonnet, JP; Chartier, T; Ferreira, JMF
      MoSi2/Al2O3 FGM: elaboration by tape casting and SHS

      JOURNAL OF THE EUROPEAN CERAMIC SOCIETY
    13. Tung, RT
      Recent advances in Schottky barrier concepts

      MATERIALS SCIENCE & ENGINEERING R-REPORTS
    14. Shon, IJ; Rho, DH; Kim, HC; Munir, ZA
      Synthesis of WSi2-ZrO2 and WSi2-Nb composites by field-activated combustion

      JOURNAL OF ALLOYS AND COMPOUNDS
    15. Tursina, AI; Gribanov, AV; Seropegin, YD; Bodak, OI
      Crystal structure of the new compound Ce4Pd29Si14

      JOURNAL OF ALLOYS AND COMPOUNDS
    16. Gribanov, AV; Seropegin, YD; Kubarev, OL; Akselrud, LG; Bodak, OI
      New ternary silicide of cerium and palladium Ce3Pd5Si

      JOURNAL OF ALLOYS AND COMPOUNDS
    17. Inui, H; Ito, K; Nakamoto, T; Ishikawa, K; Yamaguchi, M
      Stacking faults on (001) and their influence on the deformation and fracture behavior of single crystals of MoSi2-WSi2 solid-solutions with the C11(b) structure

      MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING
    18. Senkov, ON; Cavusoglu, M; Froes, FH
      Synthesis and characterization of a TiAl/Ti5Si3 composite with a submicrocrystalline structure

      MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING
    19. Soucy, G; Rahmane, M; Fan, XB; Ishigaki, T
      Heat and mass transfer during in-flight nitridation of molybdenum disilicide powder in an induction plasma reactor

      MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING
    20. Beckman, S; Cook, BA; Akinc, M
      An analysis of electrical resistivity of compositions within the Mo-Si-B ternary system part II: Multi-phase composites

      MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING
    21. Platow, W; Wood, DE; Burnette, JE; Nemanich, RJ; Sayers, DE
      XAFS studies of the formation of cobalt silicide on (root 3 x root 3) SiC(0001)

      JOURNAL OF SYNCHROTRON RADIATION
    22. Sun, LY; Gong, KC
      Silicon-based materials from rice husks and their applications

      INDUSTRIAL & ENGINEERING CHEMISTRY RESEARCH
    23. Lee, JD; Jin, SH; Shim, BC; Park, BG
      A formation of cobalt silicide on silicon field emitter arrays by electrical stress

      IEEE ELECTRON DEVICE LETTERS
    24. Tsui, BY; Wu, MD; Gan, TC
      Impact of silicide formation on the resistance of common source/drain region

      IEEE ELECTRON DEVICE LETTERS
    25. Jang, YC; Shin, DO; Kim, KS; Shim, KH; Lee, NE; Youn, SP; Roh, KJ; Roh, YH
      Structural and electrical characteristics of chemical vapor deposited W/n-Si0.83Ge0.17/Si(001) and chemical vapor deposited WSix/n-Si0.83Ge0.17/Si(001)

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
    26. Pereslavtseva, NS; Kurganskii, SI
      Theoretical photoemission and X-ray emission spectra of nickel and cobalt disilicide films

      JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA
    27. Lee, WH; Ko, YK; Jang, JH; Kim, CS; Reucroft, PJ; Lee, JG
      Microstructure control of copper films by the addition of molybdenum in anadvanced metallization process

      JOURNAL OF ELECTRONIC MATERIALS
    28. Umapathi, B; Das, S; Lahiri, SK; Kal, S
      Solid phase reaction of Ti with Si-Ge layers prepared by Ge-implantation

      JOURNAL OF ELECTRONIC MATERIALS
    29. Berling, D; Bertoncini, P; Mehdaoui, A; Wetzel, P; Gewinner, G; Loegel, B
      Magnetization reversal mechanisms in epitaxial Fe/Si(001) layers with twofold and fourfold magnetic anisotropies

      JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS
    30. Bertoncini, P; Wetzel, P; Berling, D; Mehdaoui, A; Loegel, B; Gewinner, G; Poinsot, R; Pierron-Bohnes, V
      Magnetic anisotropy of epitaxial Fe layers grown on Si(001)

      JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS
    31. Gurrappa, I; Gogia, AK
      Development of oxidation resistant coatings for titanium alloys

      MATERIALS SCIENCE AND TECHNOLOGY
    32. Liang, JH; Chao, DS
      Formation of tungsten silicide films by ion beam synthesis

      SURFACE & COATINGS TECHNOLOGY
    33. Chen, KM; Huang, HJ; Chang, CY; Huang, TY; Huang, GW; Chen, LP
      The reaction of Co and Si1-xGex for MOSFET with poly-Si1-xGex gate

      MATERIALS CHEMISTRY AND PHYSICS
    34. Watanabe, T; Zhang, GJ; Yue, XM; Zeng, YP; Shobu, K; Bahlawane, N
      Multilayer composites in Al2O3/MoSi2 system

      MATERIALS CHEMISTRY AND PHYSICS
    35. Tantri, PS; Bhattacharya, AK; Ramasesha, SK
      Synthesis and properties of MoSi2 based engineering ceramics

      PROCEEDINGS OF THE INDIAN ACADEMY OF SCIENCES-CHEMICAL SCIENCES
    36. Krachino, TV; Kuz'min, MV; Loginov, MV; Mittsev, MA
      Adsorption stage of the Eu-Si(111) interface formation

      APPLIED SURFACE SCIENCE
    37. Bennett, PA; Smith, DJ; Robinson, IK
      Strain in coherent cobalt silicide islands formed by reactive epitaxy

      APPLIED SURFACE SCIENCE
    38. Galkin, NG; Konchenko, AV; Vavanova, SV; Maslov, AM; Talanov, AO
      Transport, optical and thermoelectrical properties of Cr and Fe disilicides and their alloys on Si(111)

      APPLIED SURFACE SCIENCE
    39. Gregoratti, L; Barinov, A; Casalis, L; Kiskinova, M
      Spectromicroscopy of interfacial interactions between thin Ni films and a Au-Si surface

      APPLIED SURFACE SCIENCE
    40. Higai, S; Ohno, T; Sasaki, T
      A first-principles study on initial processes of a Ni adatom on the H-terminated Si(001)-(2 x 1) surface

      APPLIED SURFACE SCIENCE
    41. Bailey, P; Noakes, TCQ; Baddeley, CJ; Tear, SP; Woodruff, DP
      Monolayer resolution in medium energy ion scattering

      NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
    42. Rout, B; Ghose, SK; Mahapatra, DP; Dev, BN; Bakhru, H; Haberl, AW
      Status of ion microbeam facility at the Institute of Physics, Bhubaneswar,India

      NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
    43. Rout, B; Kamila, J; Ghose, SK; Mahapatra, DP; Dev, BN
      Characterization of microstructures formed on MeV ion-irradiated silver films on Si(111) surfaces

      NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
    44. Seng, HL; Osipowicz, T; Lee, PS; Mangelinck, D; Sum, TC; Watt, F
      Micro-RBS study of nickel silicide formation

      NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
    45. Milosavljevic, M; Dhar, S; Schaaf, P; Bibic, N; Lieb, KP
      Synthesizing single-phase beta-FeSi2 via ion beam irradiations of Fe/Si bilayers

      NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
    46. Ramos, AR; Paszti, F; Kotai, E; Vazsonyi, E; Conde, O; da Silva, MR; da Silva, MF; Soares, JC
      Synthesis of cobalt silicide on porous silicon by high dose ion implantation

      NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
    47. Vantomme, A; Hogg, SM; Wu, MF; Pipeleers, B; Swart, M; Goodman, S; Auret, D; Iakoubovskii, K; Adriaenssens, GJ; Jacobs, K; Moerman, I
      Suppression of rare-earth implantation-induced damage in GaN

      NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
    48. Hogg, SM; Vantomme, A; Wu, MF; Pipeleers, B; Swart, M
      Temperature and angular effects on the channelled implantation of Er into Si < 111 >

      NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
    49. Zhang, YW; Zhang, TH; Xiao, ZS; Whitlow, HJ
      Sputtering transients for some transition elements during high-fluence MEVVA implantation of Si

      NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
    50. Cazzaniga, F; Pavia, G; Sabbadini, A; Spiga, S; Queirolo, G
      AFM measurement of the grain size in polycrystalline titanium silicides

      MICROELECTRONIC ENGINEERING
    51. Stark, T; Gutowski, L; Herden, M; Grunleitner, H; Kohler, S; Hundhausen, M; Ley, L
      Ti-silicide formation during isochronal annealing followed by in situ ellipsometry

      MICROELECTRONIC ENGINEERING
    52. Alberti, A; Kappius, L; Mantl, S
      The effect of the reaction temperature on the thermal stability of polycrystalline CoSi2 layers on Si(001)

      MICROELECTRONIC ENGINEERING
    53. Lindsay, R; Lauwers, A; de Potter, M; Roelandts, N; Vrancken, C; Maex, K
      Optimized thermal processing for Ti-capped CoSi2 for 0.13 mu m technology

      MICROELECTRONIC ENGINEERING
    54. Alberti, A; La Via, F; Spinella, C; Rimini, E
      Structural relationship of polycrystalline cobalt silicide lines to (001) silicon substrate and their thermal stability

      MICROELECTRONIC ENGINEERING
    55. Kluth, P; Zhao, QT; Detavernier, C; Xu, J; Kappius, L; Bay, H; Lenk, S; Mantl, S
      Nanometer patterning of thin CoSi2-films by application of local stress

      MICROELECTRONIC ENGINEERING
    56. Sell, B; Willer, J; Pomplun, K; Sanger, A; Schumann, D; Krautschneider, W
      Interface characteristics between tungsten silicide electrodes and thin dielectrics

      MICROELECTRONIC ENGINEERING
    57. Schuller, B; Carius, R; Mantl, S
      Modification of beta-FeSi2 precipitate layers in silicon by hydrogen implantation

      MICROELECTRONIC ENGINEERING
    58. Fanciulli, M; Zenkevich, A; Weyer, G; Vanzini, C; Tresso, E; Baricco, M
      Structural and optical properties of Fe1-xMxSi2 thin films (M = Co, Mn; 0 <= x <= 0.20)

      MICROELECTRONIC ENGINEERING
    59. Sun, L; Pan, JS
      TiC whisker-reinforced MoSi2 matrix composites

      MATERIALS LETTERS
    60. Acker, J; Rover, I; Otto, R; Roewer, G; Bohmhammel, K
      Formation of transition metal silicides by solid-gas reactions: thermodynamic and kinetic considerations

      SOLID STATE IONICS
    61. Horsfield, AP; Fujitani, H
      Density functional study of the initial stage of the anneal of a thin Co film on Si - art. no. 235303

      PHYSICAL REVIEW B
    62. Reuter, K; de Andres, PL; Garcia-Vidal, FJ; Flores, F; Heinz, K
      Surface and bulk band-structure effects on CoSi2/Si(111) ballistic-electron emission experiments - art. no. 205325

      PHYSICAL REVIEW B
    63. Zhu, YF; Wang, L; Yao, WQ; Cao, LL
      Interface diffusion and reaction between Ti layer and Si3N4/Si substrate

      SURFACE AND INTERFACE ANALYSIS
    64. Zheng, C; Oeckler, O; Mattausch, H; Simon, A
      La(3)X(3)Z-compounds with condensed La(6)Z octahedra helically connected in three dimensions

      ZEITSCHRIFT FUR ANORGANISCHE UND ALLGEMEINE CHEMIE
    65. Travlos, A; Salamouras, N; Boukos, N
      Epitaxial dysprosium silicide films on silicon: growth, structure and electrical properties

      THIN SOLID FILMS
    66. Liu, B; Liu, CZ; Cheng, DJ; He, R; Yang, SZ
      Pulsed high energy density plasma processing silicon surface

      THIN SOLID FILMS
    67. Detavernier, C; Van Meirhaeghe, RL; Cardon, F; Maex, K
      CoSi2 formation through SiO2

      THIN SOLID FILMS
    68. Guliants, EA; Anderson, WA; Guo, LP; Guliants, VV
      Transmission electron microscopy study of Ni silicides formed during metal-induced silicon growth

      THIN SOLID FILMS
    69. Detavernier, C; Van Meirhaeghe, TRL; Cardon, F; Maex, K
      CoSi2 nucleation in the presence of Ge

      THIN SOLID FILMS
    70. Yoon, SY; Park, SJ; Kim, KH; Jang, J
      Metal-induced crystallization of amorphous silicon

      THIN SOLID FILMS
    71. Bouabellou, A; Halimi, R; Mirouh, K; Labbani, R; Djebien, R; Mosser, A
      Silicidation in chromium-amorphous silicon multilayer films

      THIN SOLID FILMS
    72. Maeda, Y; Umezawa, K; Hayashi, Y; Miyake, K
      Raman spectroscopic study of ion-beam synthesized polycrystalline beta-FeSi2 on Si(100)

      THIN SOLID FILMS
    73. Yoshitake, T; Nagamoto, T; Nagayama, K
      Microstructure of beta-FeSi2 thin films prepared by pulsed laser deposition

      THIN SOLID FILMS
    74. Katsumata, H; Makita, Y; Takada, T; Tanoue, H; Kobayashi, N; Hasegawa, M; Kakemoto, H; Tsukamoto, T; Uekusa, S
      Fabrication of heterostructure p-beta-Fe0.95Mn0.05Si2/n-Si diodes by Fe+ and Mn+ co-implantation in Si(100) substrates

      THIN SOLID FILMS
    75. Liu, ZX; Watanabe, M; Hanabusa, M
      Electrical and photovoltaic properties of iron-silicide/silicon heterostructures formed by pulsed laser deposition

      THIN SOLID FILMS
    76. Park, KH; Ha, JS; Yun, WS
      Initial stages of Fe growth on clean and Sb-terminated Si(100) surfaces

      SURFACE SCIENCE
    77. Ojima, K; Yoshimura, M; Ueda, K
      STM observation of the 2 x 3 and c(2 x 6) structures on Ba/Si(100)

      SURFACE SCIENCE
    78. Polop, C; Rogero, C; Sacedon, JL; Martin-Gago, JA
      Surface morphology of yttrium silicides epitaxially grown on Si(111) by STM

      SURFACE SCIENCE
    79. Kitayama, H; Tear, SP; Spence, DJ; Urano, T
      Structure analysis of two-dimensional Holmium silicide by low energy electron diffraction

      SURFACE SCIENCE
    80. Iannuzzi, M; Miglio, L
      Surface energies and surface relaxation at TiSi2 competing phases

      SURFACE SCIENCE
    81. Gamble, HS; Armstrong, BM; Baine, P; Bain, M; McNeill, DW
      Silicon-on-insulator substrates with buried tungsten silicide layer

      SOLID-STATE ELECTRONICS
    82. Vogg, G; Brandt, MS; Stutzmann, M
      Elastic properties of the layered zintl-phase CaSi2

      PHYSICA STATUS SOLIDI A-APPLIED RESEARCH
    83. Carter, P; Gleeson, B; Young, DJ
      Rapid growth of SiO2 nanofibers on silicon-bearing alloys

      OXIDATION OF METALS
    84. Gurrappa, I
      Effect of aluminizing on the oxidation behavior of the titranium alloy, IMI 834

      OXIDATION OF METALS
    85. Rogl, P; Le Bihan, T; Noel, H
      Phase equilibria and magnetism in the Mo-Si-U system

      JOURNAL OF NUCLEAR MATERIALS
    86. Kato, N; Maruyama, H; Saka, H
      Preparation of TEM plane view sections on semiconductor device using the tripod-polisher and chemical etching

      JOURNAL OF ELECTRON MICROSCOPY
    87. Yang, JL; Chen, NF; Liu, ZK; Yang, SY; Chai, CL; Liao, MY; He, HJ
      MnSi similar to 1.73 grown on silicon with mass-analyzed low energy dual ion beam epitaxy technique

      JOURNAL OF CRYSTAL GROWTH
    88. Shi, J; Ishii, D; Hashimoto, M; Barna, A; Barna, PB; Haga, Y; Nittono, O
      Growth behavior and microstructure of Co-Ge films prepared on GaAs substrate by high-temperature sequential deposition

      JOURNAL OF CRYSTAL GROWTH
    89. Larciprete, R; Danailov, M; Barinov, A; Gregoratti, L; Kiskinova, M
      Thermal and pulsed laser induced surface reactions in Ti/Si(001) interfaces studied by spectromicroscopy with synchrotron radiation

      JOURNAL OF APPLIED PHYSICS
    90. Kudryavtsev, YV; Nemoshkalenko, VV; Lee, YP; Kim, KW; Rhee, JY; Dubowik, J
      Interfaces of Fe/Si multilayered films with a strong antiferromagnetic coupling analyzed by optical and magneto-optical spectroscopies

      JOURNAL OF APPLIED PHYSICS
    91. Liu, JF; Feng, JY; Zhu, J
      Comparison of the thermal stability of NiSi films in Ni/Pt/(111)Si and Ni/Pt/(100)Si systems

      JOURNAL OF APPLIED PHYSICS
    92. d'Heurle, FM; Zhang, SL; Lavoie, C; Gas, P; Cabral, C; Harper, JME
      Formation of C54TiSi(2): Effects of niobium additions on the apparent activation energy

      JOURNAL OF APPLIED PHYSICS
    93. Qu, XP; Ru, GP; Han, YZ; Xu, BL; Li, BZ; Wang, N; Chu, PK
      Epitaxial growth of CoSi2 film by Co/a-Si/Ti/Si(100) multilayer solid state reaction

      JOURNAL OF APPLIED PHYSICS
    94. Detavernier, C; Van Meirhaeghe, RL; Cardon, F; Maex, K; Bender, H; Brijs, B; Vandervorst, W
      Formation of epitaxial CoSi2 by a Cr or Mo interlayer: Comparison with a Ti interlayer

      JOURNAL OF APPLIED PHYSICS
    95. Kamins, TI; Williams, RS; Basile, DP; Hesjedal, T; Harris, JS
      Ti-catalyzed Si nanowires by chemical vapor deposition: Microscopy and growth mechanisms

      JOURNAL OF APPLIED PHYSICS
    96. Sarkar, DK; Falke, M; Giesler, H; Teichert, S; Beddies, G; Hinneberg, HJ
      Role of a buried ultrathin amorphous interlayer on the growth of Co films on different metal substrates

      JOURNAL OF APPLIED PHYSICS
    97. Niinomi, M; Fukunaga, K; Tono, G; Koike, J; Eylon, D; Fujishiro, S
      Effect of microstructure on fracture characteristics of Ti-6Al-2Sn-2Mo-2Zr-2Cr-Si alloy

      TETSU TO HAGANE-JOURNAL OF THE IRON AND STEEL INSTITUTE OF JAPAN
    98. Kondo, M; Shimamoto, H; Washio, K
      Variation in emitter diffusion depth by TiSi2 formation on polysilicon emitters of Si bipolar transistors

      IEEE TRANSACTIONS ON ELECTRON DEVICES
    99. Thei, KB; Liu, WC; Chuang, HM; Lin, KW; Cheng, CC; Ho, CH; Su, CW; Wuu, SG; Wang, CS
      A novel double ion-implant (DII) Ti-salicide technology for high-performance sub-0.25-mu m CMOS devices applications

      IEEE TRANSACTIONS ON ELECTRON DEVICES
    100. Stewart, M; Howell, RS; Pires, L; Hatalis, MK
      Polysilicon TFT technology for active matrix OLED displays

      IEEE TRANSACTIONS ON ELECTRON DEVICES


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Documento generato il 20/01/21 alle ore 12:33:51