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La ricerca find articoli where soggetti phrase all words 'SIH2CL2' sort by level,fasc_key/DESCEND, pagina_ini_num/ASCEND ha restituito 30 riferimenti
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    1. Moon, BY; Youn, JH; Won, SH; Jang, J
      Polycrystalline silicon film deposited by ICP-CVD

      SOLAR ENERGY MATERIALS AND SOLAR CELLS
    2. Ohkawa, K; Shimizu, S; Sato, H; Komaru, T; Futako, W; Kamiya, T; Fortmann, CM; Shimizu, I
      Stability of a-Si : H solar cells deposited by Ar-treatment or by ECR techniques

      SOLAR ENERGY MATERIALS AND SOLAR CELLS
    3. Nishizawa, M; Yasuda, T; Yamasaki, S; Shinohara, M; Kamakura, N; Kimura, Y; Niwano, M
      Chlorosilane adsorption on clean Si surfaces: Scanning tunneling microscopy and Fourier-transform infrared absorption spectroscopy studies

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
    4. Dairiki, K; Yamada, A; Konagai, M
      Numerical analysis to improve the stabilized-efficiency of amorphous silicon solar cells with new device structure

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    5. Liu, HP; Jung, SG; Fujimura, Y; Fukai, C; Shirai, H; Toyoshima, Y
      Low-temperature plasma-enahanced chemical vapor deposition of crystal silicon film from dichlorosilane

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    6. Liu, HP; Jung, SH; Fujimura, Y; Toyoshima, Y; Shirai, H
      Growth of crystal silicon films from chlorinated silanes by RF plasma-enhanced chemical vapor deposition

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    7. Bagatur'yants, AA; Novoselov, KP; Safonov, AA; Savchenko, LL; Cole, JV; Korkin, AA
      Atomistic modeling of chemical vapor deposition: silicon nitride CVD from dichlorosilane and ammonia

      MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
    8. Wang, CF; Tsai, DS
      Low pressure chemical vapor deposition of silicon carbide from dichlorosilane and acetylene

      MATERIALS CHEMISTRY AND PHYSICS
    9. Kamiya, T; Maeda, Y; Nakahata, K; Komaru, T; Fortmann, CM; Shimizu, I
      Effect of halogen on the structure of tow temperature polycrystalline silicon thin films fabricated on glass substrates

      JOURNAL OF THE CERAMIC SOCIETY OF JAPAN
    10. Shirai, H; Sakuma, Y; Ueyama, H
      The high-density microwave plasma for high rate deposition of microcrystalline silicon

      THIN SOLID FILMS
    11. Hori, T; Sakamoto, H; Takakuwa, Y; Enta, Y; Kato, H; Miyamoto, N
      In situ observation of a high-temperature Si(001) surface during SiH2Cl2 exposure by photoelectron spectroscopy

      THIN SOLID FILMS
    12. Shirai, H; Sakuma, Y; Ueyama, H
      The control of the high-density microwave plasma for large-area electronics

      THIN SOLID FILMS
    13. Dairiki, K; Yamada, A; Konagai, M
      Improvement of stabilized efficiency of amorphous silicon solar cell by SiH2Cl2 addition

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    14. Fukai, C; Moriya, Y; Nakamura, T; Shirai, H
      Enhanced crystallinity at initial growth stage of microcrystalline siliconon Corning #7059 glass using SiH2Cl2

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    15. SHIRAI H; ARAI T; UEYAMA H
      THE GENERATION OF HIGH-DENSITY MICROWAVE PLASMA AND ITS APPLICATION TO LARGE-AREA MICROCRYSTALLINE SILICON THIN-FILM FORMATION

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    16. TEWS R; SUCHANECK G; KOTTWITZ A
      A MODEL FOR HIGH-RATE FILM DEPOSITION FROM DUSTY RF DISCHARGES

      Surface & coatings technology
    17. TAKAKUWA Y; MAZUMDER MK; MIYAMOTO N
      SURFACE ADSORBATE RELATED NUCLEATION OF CRYSTALLOGRAPHIC DEFECT IN CHEMICAL-VAPOR-DEPOSITION OF SILICON WITH DICHLOROSILANE

      Applied surface science
    18. SUGAHARA S; MATSUMURA M
      MODELING OF GERMANIUM ATOMIC-LAYER-EPITAXY

      Applied surface science
    19. YAGI K; NAGASAWA H
      3C-SIC GROWTH BY ALTERNATE SUPPLY OF SIH2CL2 AND C2H2

      Journal of crystal growth
    20. JIN XJ; LIANG JW
      KINETICS AND TRANSPORT MODEL FOR THE CHEMICAL-VAPOR EPITAXY OF GEXSI1-X

      Journal of crystal growth
    21. SWIHART MT; CARR RW
      THERMAL-DECOMPOSITION OF DICHLOROSILANE INVESTIGATED BY PULSED-LASER POWERED HOMOGENEOUS PYROLYSIS

      Journal of the Electrochemical Society
    22. ARAI T; NAKAMURA T; SHIRAI H
      FAST DEPOSITION OF AMORPHOUS AND MICROCRYSTALLINE SILICON FILMS FROM SIH2CL2-SIH4-H-2 BY PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    23. KUSAKABE Y; HANAOKA K; KOMORI H; OHNISHI H; YAMANISHI K
      INVESTIGATION OF PRECURSORS FORMED BY MIXING SIH2CL2 WITH NH3 FOR CHEMICAL-VAPOR-DEPOSITION OF SILICON-NITRIDE FILMS

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    24. ITO S; NAKAMURA T; NISHIKAWA S
      KINETICS OF EPITAXIAL SI1-XGEX GROWTH USING SIH2CL2-GEH4-H-2 MIXTURE IN REDUCED-PRESSURE CHEMICAL-VAPOR-DEPOSITION

      Applied physics letters
    25. KOBAYASHI Y; CHINZEI Y; ASANOME H; KUROSAKI R; KIKUCHI J; SHINGUBARA S; HORIIKE Y
      HIGH-RATE BIAS SPUTTERING FILLING OF SIO2 FILM EMPLOYING BOTH CONTINUOUS-WAVE AND TIME-MODULATED INDUCTIVELY-COUPLED PLASMAS

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    26. LANGLAIS F; LOUMAGNE F; LESPIAUX D; SCHAMM S; NASLAIN R
      KINETIC PROCESSES IN THE CVD OF SIC FROM CH3SICL3-H-2 IN A VERTICAL HOT-WALL REACTOR

      Journal de physique. IV
    27. LANGLAIS F; LOUMAGNE F; LESPIAUX D; SCHAMM S; NASLAIN R
      KINETIC PROCESSES IN THE CVD OF SIC FROM CH3SICL3-H-2 IN A VERTICAL HOT-WALL REACTOR

      Journal de physique. IV
    28. DURBIN TD; LAPIANOSMITH DA; MCFEELY FR; HIMPSEL FJ; YARMOFF JA
      THE CHEMISORPTION AND REACTION OF DICHLOROSILANE ON GE(100) AND GE(111) SURFACES

      Surface science
    29. ITO S; NAKAMURA T; NISHIKAWA S
      PATTERN DEPENDENCE IN SELECTIVE EPITAXIAL SI1-XGEX GROWTH USING REDUCED-PRESSURE CHEMICAL-VAPOR-DEPOSITION

      Journal of applied physics
    30. OSHIMA T; ALONSO JC; YAMADA A; KONAGAI M; TAKAHASHI K
      LOW-TEMPERATURE SI EPITAXY BY PHOTOCHEMICAL VAPOR-DEPOSITION WITH SIH2CL2

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS


ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 25/10/20 alle ore 19:01:44