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La ricerca find articoli where soggetti phrase all words 'SI(111)' sort by level,fasc_key/DESCEND, pagina_ini_num/ASCEND ha restituito 3043 riferimenti
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    1. Ohishi, N; Yanagisawa, H; Sasaki, K; Abe, Y
      Initial silicide formation process of Mo/(100) Si system prepared using anultrahigh-vacuum sputtering system

      ELECTRONICS AND COMMUNICATIONS IN JAPAN PART II-ELECTRONICS
    2. Hess, K; Haggag, A; McMahon, W; Cheng, K; Lee, J; Lyding, J
      The physics of determining chip reliability

      IEEE CIRCUITS & DEVICES
    3. Bohm, S; Peter, LM; Schlichthorl, G; Greef, R
      Ellipsometric and microwave reflectivity studies of current oscillations during anodic dissolution of p-Si in fluoride solutions

      JOURNAL OF ELECTROANALYTICAL CHEMISTRY
    4. Hall, MA; Mui, C; Musgrave, CB
      DFT study of the adsorption of chlorosilanes on the Si(100)-2 x 1 surface

      JOURNAL OF PHYSICAL CHEMISTRY B
    5. Kato, T; Kang, SY; Xu, X; Yamabe, T
      Possible dissociative adsorption of CH3OH and CH3NH2 on Si(100)-2 x 1 surface

      JOURNAL OF PHYSICAL CHEMISTRY B
    6. Lu, X; Xu, X; Wang, NQ; Zhang, Q; Lin, MC
      Chemisorption and decomposition of thiophene and furan on the Si(100)-2 x 1 surface: A quantum chemical study

      JOURNAL OF PHYSICAL CHEMISTRY B
    7. Bacalzo-Gladden, F; Lu, X; Lin, MC
      Adsorption, isomerization and decomposition of HCN on Si(100)2 x 1: A computational study with a double-dimer cluster model

      JOURNAL OF PHYSICAL CHEMISTRY B
    8. Al-Maawali, S; Bemis, JE; Akhremitchev, BB; Leecharoen, R; Janesko, BG; Walker, GC
      Study of the polydispersity of grafted poly(dimethylsiloxane) surfaces using single-molecule atomic force microscopy

      JOURNAL OF PHYSICAL CHEMISTRY B
    9. Sasahara, A; Uetsuka, H; Onishi, H
      Single-molecule analysis by noncontact atomic force microscopy

      JOURNAL OF PHYSICAL CHEMISTRY B
    10. Zhou, XW; Ishida, M; Imanishi, A; Nakato, Y
      Roles of charge polarization and steric hindrance in determining the chemical reactivity of surface Si-H and Si-Si bonds at H-terminated Si(100) and -(111)

      JOURNAL OF PHYSICAL CHEMISTRY B
    11. Lu, X; Zhang, Q; Lin, MC
      Adsorption of methanol, formaldehyde and formic acid on the Si(100)-2x1 surface: A computational study

      PHYSICAL CHEMISTRY CHEMICAL PHYSICS
    12. Palermo, V; Jones, D
      Morphological changes of the Si [100] surface after treatment with concentrated and diluted HF

      MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
    13. Schuhmacher, D; Marowsky, G; Fedyanin, AA; Dolgova, TV; Aktsipetrov, OA
      Probe of the vicinal Si (111) surface by second harmonic phase spectroscopy

      MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
    14. Chi, KS; Chen, LJ
      Formation of ytterbium silicide on (111) and (001)Si by solid-state reactions

      MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
    15. Westmacott, KH; Hinderberger, S; Dahmen, U
      Physical vapour deposition growth and transmission electron microscopy characterization of epitaxial thin metal films on single-crystal Si and Ge substrates

      PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS ANDMECHANICAL PROPERTIES
    16. Takeguchi, M; Tanaka, M; Yasuda, H; Furuya, K
      Reflection electron microscopy observation of formation process of palladium silicide islands on silicon (111) surface

      SCRIPTA MATERIALIA
    17. Yamauchi, T; Takahara, Y; Narita, N
      Local electronic structure of Si semiconductor surface

      MATERIALS TRANSACTIONS
    18. Imanishi, A; Morisawa, K; Nakato, Y
      Formation of nanosized rodlike Ni clusters by electrodeposition on H-terminated Si(III) surfaces

      ELECTROCHEMICAL AND SOLID STATE LETTERS
    19. Han, Y; Aoyama, T; Ichimiya, A; Hisada, Y; Mukainakano, S
      Atomic models of (root 3X root 3)R30 degrees reconstruction on hexagonal 6H-SiC(0001) surface

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    20. Park, JY; Phaneuf, RJ; Williams, ED
      Scanning tunneling spectroscopy of field-induced Au nanodots on ultrathin oxides on Si(100)

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    21. Shklyaev, AA; Shibata, M; Ichikawa, M
      Continuous transfer of Ge by the tip of a scanning tunneling microscope for formation of lines

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    22. Gomoyunova, MV; Pronin, II; Valdaitsev, DA; Faradzhev, NS
      Reactive epitaxy of cobalt disilicide on Si(111)

      PHYSICS OF THE SOLID STATE
    23. Zverev, AV; Neizvestnyi, IG; Shvarts, NL; Yanovitskaya, ZS
      The simulation of epitaxy, sublimation, and annealing processes in a 3D silicon surface layer

      SEMICONDUCTORS
    24. Schroder, H; Obermeier, E; Horn, A; Wachutka, GKM
      Convex corner undercutting of {100} silicon in anisotropic KOH etching: The new step-flow model of 3-D structuring and first simulation results

      JOURNAL OF MICROELECTROMECHANICAL SYSTEMS
    25. Xie, FQ; Molitor, S; Koch, T; von Blanckenhagen, P
      Fourier analysis of temporal and spatial oscillations of tunneling currentin scanning tunneling microscopy

      CHINESE PHYSICS
    26. Lu, X; Lin, MC; Xu, X; Wang, NQ; Zhang, QN
      Diels-Alder addition of some 6-and 5-member ring aromatic compounds on theSi(001)-2x1 surface: dependence of the binding energy on the resonance energy of the aromatic compounds

      SCIENCE IN CHINA SERIES B-CHEMISTRY
    27. Wang, L; Tang, JC; Wang, XS
      Scanning tunneling microscopy study of Si growth on Si3N4/Si surface

      ACTA PHYSICA SINICA
    28. Pan, BC
      Tight-binding potential with correction of bonding environment for silicon-hydrogen

      ACTA PHYSICA SINICA
    29. Yan, L; Zhang, YP; Peng, YP; Pang, SJ; Gao, HJ
      The preferential, adsorption of Ge on Si(111) 7 x 7 surface

      ACTA PHYSICA SINICA
    30. van Veenendaal, E; Cuppen, HM; van Enckevort, WJP; van Suchtelen, J; Nijdam, AJ; Elwenspoek, M; Vlieg, E
      A Monte Carlo study of etching in the presence of a mask junction

      JOURNAL OF MICROMECHANICS AND MICROENGINEERING
    31. Conway, EM; Cunnane, VJ
      Effects of chemical pre-treatments on the etching process of p(100) Si in tetra-methyl ammonium hydroxide solution

      JOURNAL OF MICROMECHANICS AND MICROENGINEERING
    32. Palacios, JJ; Perez-Jimenez, AJ; Louis, E; Verges, JA
      Electronic transport through C-60 molecules

      NANOTECHNOLOGY
    33. Fritsch, J
      Phonons in low-dimensional systems

      JOURNAL OF PHYSICS-CONDENSED MATTER
    34. Safta, N
      Atomic origin of the surface components in the high-resolution Si 2p core level spectrum of Si (110) '8 x 2'

      JOURNAL OF PHYSICS-CONDENSED MATTER
    35. Wang, YL; Lai, MY
      Formation of surface magic clusters: a pathway to monodispersed nanostructures on surfaces

      JOURNAL OF PHYSICS-CONDENSED MATTER
    36. Itoh, N; Stoneham, AM
      Treatment of semiconductor surfaces by laser-induced electronic excitation

      JOURNAL OF PHYSICS-CONDENSED MATTER
    37. Dragnea, B; Boulmer, J; Debarre, D; Bourguignon, B
      Influence of adsorbates on UV-pulsed laser melting of Si in ultra-high vacuum

      APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
    38. Rohlfing, R
      Quasiparticle spectrum and optical excitations of semiconductor surfaces

      APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
    39. Ehmann, T; Fabry, L; Kotz, L; Pahlke, S
      Ultra-trace analytical monitoring of silicon wafer surfaces by capillary electrophoresis

      FRESENIUS JOURNAL OF ANALYTICAL CHEMISTRY
    40. Hooks, DE; Fritz, T; Ward, MD
      Epitaxy and molecular organization on solid substrates

      ADVANCED MATERIALS
    41. Reybier, K; Zairi, S; Jaffrezic-Renault, N; Herlem, G; Trokourey, A; Fahys, B
      Polyethyleneimine as a pH sensitive film for potentiometric transducers

      MATERIALS SCIENCE & ENGINEERING C-BIOMIMETIC AND SUPRAMOLECULAR SYSTEMS
    42. Morgen, P; Jensen, T; Gundlach, C; Taekker, LB; Hoffman, SV; Pedersen, K
      From oxygen adsorption to the growth of thin oxides on silicon surfaces

      COMPUTATIONAL MATERIALS SCIENCE
    43. Favaro, L
      Rotations of silica tetrahedrons in first oxide layer on Si(100): A quantum chemical study

      COMPUTATIONAL MATERIALS SCIENCE
    44. Arnault, JC; Pecoraro, S; Werckmann, J; Le Normand, F; Motta, N; Polini, R
      Early stages of the HFCVD process on multi-vicinal silicon surfaces studied by electron microscopy probes (SEM, TEM)

      DIAMOND AND RELATED MATERIALS
    45. Saada, S; Barrat, S; Bauer-Grosse, E
      Silicon substrate preparation for epitaxial diamond crystals

      DIAMOND AND RELATED MATERIALS
    46. Hochedez, JF; Bergonzo, P; Castex, MC; Dhez, P; Hainaut, O; Sacchi, M; Alvarez, J; Boyer, H; Deneuville, A; Gibart, P; Guizard, B; Kleider, JP; Lemaire, P; Mer, C; Monroy, E; Munoz, E; Muret, P; Omnes, F; Pau, JL; Ralchenko, V; Tromson, D; Verwichte, E; Vial, JC
      Diamond UV detectors for future solar physics missions

      DIAMOND AND RELATED MATERIALS
    47. Quaresima, C; Cricenti, A; Ottaviani, C; Perfetti, P; Le Lay, G
      Unambiguous identification of the Si 2p surface core-level shifts in Sb and Ag terminated silicon surfaces studied with high energy resolution photoemission

      JOURNAL OF ALLOYS AND COMPOUNDS
    48. Sakaino, K; Adachi, S
      Study of Si(100) surfaces etched in TMAH solution

      SENSORS AND ACTUATORS A-PHYSICAL
    49. Hibino, H; Ogino, T
      Growth of Si twinning superlattice

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    50. Vezian, S; Massies, J; Semond, F; Grandjean, N
      Surface morphology of GaN grown by molecular beam epitaxy

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    51. Missaoui, A; Saadoun, M; Boufaden, T; Bessais, B; Rebey, A; Ezzaouia, H; El Jani, B
      Characterization of GaN layers grown on porous silicon

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    52. Neu, G; Teisseire, M; Lemasson, P; Lahreche, H; Grandjean, N; Semond, F; Beaumont, B; Grzegory, I; Porowski, S; Triboulet, R
      Selective photoluminescence spectroscopy of shallow levels in wide band gap semiconductors

      PHYSICA B
    53. Korytar, D; Hrdy, J; Artemiev, N; Ferrari, C; Freund, A
      Sagittal X-ray beam deviation at asymmetric inclined diffractors

      JOURNAL OF SYNCHROTRON RADIATION
    54. Naftel, SJ; Sham, TK; Yiu, YM; Yates, BW
      Calcium L-edge XANES study of some calcium compounds

      JOURNAL OF SYNCHROTRON RADIATION
    55. Kondo, D; Sakamoto, K; Takeda, H; Matsui, F; Ohta, T; Amemiya, K; Uchida, W; Kasuya, A
      Thermal effect in unoccupied molecular orbitals of C-60 molecules adsorbedon a Si(001)-(2 x 1) surface studied by NEXAFS

      JOURNAL OF SYNCHROTRON RADIATION
    56. Boukherroub, R; Morin, S; Wayner, DDM; Bensebaa, F; Sproule, GI; Baribeau, JM; Lockwood, DJ
      Ideal passivation of luminescent porous silicon by thermal, noncatalytic reaction with alkenes and aldehydes

      CHEMISTRY OF MATERIALS
    57. Ross, FM
      Dynamic studies of semiconductor growth processes using in situ electron microscopy

      MRS BULLETIN
    58. Grisaru, H; Cohen, Y; Aurbach, D; Sukenik, CN
      Highly doped silicon electrodes for the electrochemical modification of self-assembled siloxane-anchored monolayers: A feasibility study

      LANGMUIR
    59. Sieval, AB; Linke, R; Heij, G; Meijer, G; Zuilhof, H; Sudholter, EJR
      Amino-terminated organic monolayers on hydrogen-terminated silicon surfaces

      LANGMUIR
    60. Niederhauser, TL; Jiang, GL; Lua, YY; Dorff, MJ; Woolley, AT; Asplund, MC; Berges, DA; Linford, MR
      A new method of preparing monolayers on silicon and patterning silicon surfaces by scribing in the presence of reactive species

      LANGMUIR
    61. Barrelet, CJ; Robinson, DB; Cheng, J; Hunt, TP; Quate, CF; Chidsey, CED
      Surface characterization and electrochemical properties of alkyl, fluorinated alkyl, and alkoxy monolayers on silicon

      LANGMUIR
    62. Alchalabi, K; Zimin, D; Zogg, H; Buttler, W
      Monolithic heteroepitaxial PbTe-on-Si infrared focal plane array with 96 x128 pixels

      IEEE ELECTRON DEVICE LETTERS
    63. Hannon, JB; Tromp, RM
      Phase boundary fluctuations on Si(l11)

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
    64. Boo, JH; Lee, SB; Lee, KW; Yu, KS; Kim, Y; Yeon, SH; Jung, IN
      Epitaxial growth of cubic SiC thin films on silicon using single molecularprecursors by metalorganic chemical vapor deposition

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
    65. Nishizawa, M; Yasuda, T; Yamasaki, S; Shinohara, M; Kamakura, N; Kimura, Y; Niwano, M
      Chlorosilane adsorption on clean Si surfaces: Scanning tunneling microscopy and Fourier-transform infrared absorption spectroscopy studies

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
    66. Miyake, K; Okawa, S; Takeuchi, O; Futaba, DN; Hata, K; Morita, R; Yamashita, M; Shigekawa, H
      Characteristic structures of the Si(111)-7x7 surface step studied by scanning tunneling microscopy

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
    67. Inoue, T; Yamamoto, Y; Satoh, M
      Electron-beam-assisted evaporation of epitaxial CeO2 thin films on Si substrates

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
    68. Hansen, L; Ankudinov, A; Bensing, F; Wagner, J; Ade, G; Hinze, P; Wagner, V; Geurts, J; Waag, A
      Growth and characterization of InAs quantum dots on silicon

      PHYSICA STATUS SOLIDI B-BASIC RESEARCH
    69. Narayanamurti, V; Kozhevnikov, M
      Beem imaging and spectroscopy of buried structures in semiconductors

      PHYSICS REPORTS-REVIEW SECTION OF PHYSICS LETTERS
    70. Nonogaki, Y; Gao, Y; Mekaru, H; Miyamae, T; Urisu, T
      Nanostructure formation on Si (111) surface assisted by synchrotron radiation illumination - Characterization by scanning tunneling microscopy

      JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA
    71. Giovanelli, L; Papageorgiou, N; Terzian, G; Layet, JM; Mossoyan, JC; Mossoyan-Deneux, M; Gothelid, M; Le Lay, G
      Electronic structure of self-assembled organic/inorganic semiconductor interfaces: lead phthalocyanine on InSb and InAs(100)-4X2/c(8 X2)

      JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA
    72. Westphal, C; Schurmann, M; Dreiner, S; Zacharias, H
      Investigation of the (root 3X root 3)R30 degrees Sb/Si(111) structure by means of X-ray photoelectron diffraction

      JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA
    73. Dhanak, VR; Santoni, A; Grill, L; Petaccia, L
      A high temperature X-ray absorption and valence band spectroscopy study ofthe Si(100) surface

      JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA
    74. Sakamoto, K; Hirano, M; Takeda, H; Jemander, ST; Matsuda, I; Amemiya, K; Ohta, T; Uchida, W; Hansson, GV; Uhrberg, RIG
      Interaction of metastable molecular oxygen with the dangling bonds of a Si(111)-(7X7) surface

      JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA
    75. Savenko, VN; Nasimov, DA; Latyshev, AV; Aseev, AL
      The odering of gold nanoclusters on the silicon surface

      IZVESTIYA AKADEMII NAUK SERIYA FIZICHESKAYA
    76. Jothilingam, R; Koch, MW; Posthill, JB; Wicks, GW
      A study of cracking in GaN grown on silicon by molecular beam epitaxy

      JOURNAL OF ELECTRONIC MATERIALS
    77. Kipshidze, G; Nikishin, S; Kuryatkov, V; Choi, K; Gherasoiu, I; Prokofyeva, T; Holtz, M; Temkin, H; Hobart, KD; Kub, FJ; Fatemi, M
      High quality AlN and GaN grown on compliant Si/SiC substrates by gas source molecular beam epitaxy

      JOURNAL OF ELECTRONIC MATERIALS
    78. Berling, D; Bertoncini, P; Mehdaoui, A; Wetzel, P; Gewinner, G; Loegel, B
      Magnetization reversal mechanisms in epitaxial Fe/Si(001) layers with twofold and fourfold magnetic anisotropies

      JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS
    79. Bertoncini, P; Wetzel, P; Berling, D; Mehdaoui, A; Loegel, B; Gewinner, G; Poinsot, R; Pierron-Bohnes, V
      Magnetic anisotropy of epitaxial Fe layers grown on Si(001)

      JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS
    80. Mosca, DH; Mattoso, N; Schreiner, WH; de Oliveira, AJA; Ortiz, WA; Flores, WH; Teixeira, SR
      Evidence of antiferromagnetic phases in discontinuous Fe/CaF2 multilayers

      JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS
    81. Pakhomov, AB; Denardin, JC; de Lima, OF; Knobel, M; Missell, FP
      Transport and magnetotransport properties of Co thin films on Si

      JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS
    82. Yoon, M; Mai, H; Willis, RF
      Large modulation-amplitude, local barrier-height, scanning tunneling microscopy

      EUROPHYSICS LETTERS
    83. Nogales, E; Mendez, B; Piqueras, J; Plugaru, R
      Scanning tunnelling microscopy and spectroscopy of nanocrystalline siliconfilms

      SEMICONDUCTOR SCIENCE AND TECHNOLOGY
    84. Urbieta, A; Fernandez, P; Piqueras, J; Sekiguchi, T
      Scanning tunnelling spectroscopy characterization of ZnO single crystals

      SEMICONDUCTOR SCIENCE AND TECHNOLOGY
    85. Liu, JF; Feng, JY; Li, WZ
      Effect of pre-Co-deposition C+ implantation on the stress level of CoSi2 films formed on Si(100) substrates

      SEMICONDUCTOR SCIENCE AND TECHNOLOGY
    86. Li, B; Zeng, CG; Wang, HQ; Wang, B; Hou, JG
      Scanning tunnelling microscope tip-induced reconstruction on Si(111) root 3 x root 30 degrees-Ag surface

      CHINESE PHYSICS LETTERS
    87. Han, SJ; Lee, CW; Hwang, CH; Lee, KH; Yang, MC; Kang, H
      Spectrometer for the study of angle- and energy-resolved reactive ion scattering at surfaces

      BULLETIN OF THE KOREAN CHEMICAL SOCIETY
    88. Kamaratos, M; Papageorgopoulos, CA
      Sodium and chlorine coadsorption on Si(100)

      SURFACE REVIEW AND LETTERS
    89. Salman, SA; Katircioglu, S; Erkoc, S
      Adsorption of hydrogen and oxygen on single and double layer stepped Si(100) surfaces

      INTERNATIONAL JOURNAL OF MODERN PHYSICS B
    90. Rosei, F; Fontana, S
      Comment on "Surface morphology and electronic structure of Ge/Si(111) 7 x 7 system" [A. Lobo et al., Appl. Surf. Sci. 173 (2001) 270]

      APPLIED SURFACE SCIENCE
    91. Krachino, TV; Kuz'min, MV; Loginov, MV; Mittsev, MA
      Adsorption stage of the Eu-Si(111) interface formation

      APPLIED SURFACE SCIENCE
    92. Xie, F; von Blanckenhagen, P; Wu, J; Liu, JW; Zhang, QZ; Chen, YC; Wang, EG
      Contamination of Si surfaces in ultrahigh vacuum and formation of SiC islands

      APPLIED SURFACE SCIENCE
    93. Zerrouki, M; Lacharme, JP; Ghamnia, M; Sebenne, CA; Abidri, B
      Thermal stability of a partly Fe-intercalated GaSe film

      APPLIED SURFACE SCIENCE
    94. Bennett, PA; Smith, DJ; Robinson, IK
      Strain in coherent cobalt silicide islands formed by reactive epitaxy

      APPLIED SURFACE SCIENCE
    95. Bohne, W; Rohrich, J; Schmidt, M; Schopke, A; Selle, B; Wurz, R
      Composition and morphology studies of ultrathin CaF2 epitaxial films on silicon

      APPLIED SURFACE SCIENCE
    96. Kraus, A; Hanbucken, M; Koshikawa, T; Neddermeyer, H
      Strain relief of Si(111)7 x 7 by hydrogen adsorption

      APPLIED SURFACE SCIENCE
    97. Le Normand, F; Arnault, JC; Pecoraro, S; Werckmann, J
      Formation of beta-SiC nanocrystals on Si(111) monocrystal during the HFCVDof diamond

      APPLIED SURFACE SCIENCE
    98. Taekker, LB; Jensen, T; Morgen, P; Hoffman, SV; Li, ZS
      Systematic oscillation of peak positions in photoemission spectra during alternating caesium and oxygen exposures of silicon surfaces

      APPLIED SURFACE SCIENCE
    99. Pronin, II; Valdaitsev, DA; Faradzhev, NS; Gomoyunova, MV; Luches, P; Valeri, S
      Imaging of the structure of ultra-thin cobalt silicide films by inelastically backscattered electrons

      APPLIED SURFACE SCIENCE
    100. Yanagawa, T; Nagai, H; Ishii, K; Matsumoto, S
      Initial growth of titanium germanosilicide on Ge/Si(111)

      APPLIED SURFACE SCIENCE


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Documento generato il 21/10/20 alle ore 18:59:16