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La ricerca find articoli where soggetti phrase all words 'SI(100)' sort by level,fasc_key/DESCEND, pagina_ini_num/ASCEND ha restituito 2530 riferimenti
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    1. Wehner, S; Zecho, T; Kuppers, J
      Kinetics of the reaction of adsorbed hexamethyldisilane on C/Pt(111) with D atoms: Si-Si bond breaking

      JOURNAL OF PHYSICAL CHEMISTRY B
    2. Okamoto, Y
      Large enhancement of reactivity of Diels-Alder reactions on a C(001)-(2x1)surface: A hybrid density-functional study

      JOURNAL OF PHYSICAL CHEMISTRY B
    3. Hamaguchi, K; Machida, S; Nagao, M; Yasui, F; Mukai, K; Yamashita, Y; Yoshinobu, J; Kato, HS; Okuyama, H; Kawai, M; Sato, T; Iwatsuki, M
      Bonding and structure of 1,4-cyclohexadiene chemisorbed on Si(100)(2x1)

      JOURNAL OF PHYSICAL CHEMISTRY B
    4. Cao, XP; Coulter, SK; Ellison, MD; Liu, HB; Liu, JM; Hamers, RJ
      Bonding of nitrogen-containing organic molecules to the silicon(001) surface: The role of aromaticity

      JOURNAL OF PHYSICAL CHEMISTRY B
    5. Fink, A; Menzel, D; Widdra, W
      Symmetry and electronic structure of benzene adsorbed on single-domain Ge(100)-(2x1) and Ge/Si(100)-(2 x 1)

      JOURNAL OF PHYSICAL CHEMISTRY B
    6. Zecho, T; Brandner, BD; Biener, J; Kuppers, J
      UHV study of hydrogen atom induced etching of amorphous hydrogenated silicon thin films

      JOURNAL OF PHYSICAL CHEMISTRY B
    7. Buriak, JM
      Diamond surfaces: Just big organic molecules?

      ANGEWANDTE CHEMIE-INTERNATIONAL EDITION
    8. Cooper, GD; Sanabia, JE; Orloff, J; Moore, JH
      Electron-stimulated desorption from the products of chemisorption of trifluorochloroethene on silicon

      INTERNATIONAL JOURNAL OF MASS SPECTROMETRY
    9. Palermo, V; Jones, D
      Morphological changes of the Si [100] surface after treatment with concentrated and diluted HF

      MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
    10. Smith, DJ; Todd, M; McMurran, J; Kouvetakis, J
      Structural properties of heteroepitaxial germanium-carbon alloys grown on Si (100)

      PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS ANDMECHANICAL PROPERTIES
    11. Iizuka, T; Onoda, A; Hoshide, T
      MD simulation of hardness property of A1 thin film sputtered on Si substrate and its related to porosity

      JSME INTERNATIONAL JOURNAL SERIES A-SOLID MECHANICS AND MATERIAL ENGINEERING
    12. Yang, JL; Ono, T; Esashi, M
      Investigating surface stress: Surface loss in ultrathin single-crystal silicon cantilevers

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    13. Khmel, SY; Fedorov, SY; Sharafutdinov, RG
      Condensation of monosilane-argon and monosilane-helium mixtures in free jets

      TECHNICAL PHYSICS
    14. Davydov, SY; Pavlyk, AV
      Calculation of the variation in the work function caused by adsorption of metal atoms on semiconductors

      SEMICONDUCTORS
    15. Yakimov, AI; Dvurechenskii, AV; Stepina, NP; Nikiforov, AI; Nenashev, AV
      Contribution of the electron-electron interaction to the optical properties of dense arrays of Ge/Si quantum dots

      JOURNAL OF EXPERIMENTAL AND THEORETICAL PHYSICS
    16. Lu, X; Lin, MC; Xu, X; Wang, NQ; Zhang, QN
      Diels-Alder addition of some 6-and 5-member ring aromatic compounds on theSi(001)-2x1 surface: dependence of the binding energy on the resonance energy of the aromatic compounds

      SCIENCE IN CHINA SERIES B-CHEMISTRY
    17. Zhang, QZ; Zhang, JG; Wang, SK; Zhang, M; Liu, CP; Gu, YS
      Theoretical investigation on the reactions of H with (CH3)(4-n)SiHn (n = 1-4)

      CHINESE JOURNAL OF CHEMISTRY
    18. Nieminen, M; Sajavaara, T; Rauhala, E; Putkonen, M; Niinisto, L
      Surface-controlled growth of LaAlO3 thin films by atomic layer epitaxy

      JOURNAL OF MATERIALS CHEMISTRY
    19. Bannerjee, R; Purandare, SC; Palkar, VR; Pinto, R
      Microstructural studies of aqueous sol derived ferroelectric PbTiO3 thin films

      JOURNAL OF PHYSICS-CONDENSED MATTER
    20. Stesmans, A; Afanas'ev, VV
      Electron spin resonance observation of Si dangling-bond-type defects at the interface of (100) Si with ultrathin layers of SiOx, Al2O3 and ZrO2

      JOURNAL OF PHYSICS-CONDENSED MATTER
    21. Itoh, N; Stoneham, AM
      Treatment of semiconductor surfaces by laser-induced electronic excitation

      JOURNAL OF PHYSICS-CONDENSED MATTER
    22. Dragnea, B; Boulmer, J; Debarre, D; Bourguignon, B
      Influence of adsorbates on UV-pulsed laser melting of Si in ultra-high vacuum

      APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
    23. Kamins, TI; Nauka, K; Williams, RS
      Effect of self-assembled Ge nanostructures on Si surface electronic properties

      APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
    24. Arnault, JC; Pecoraro, S; Werckmann, J; Le Normand, F; Motta, N; Polini, R
      Early stages of the HFCVD process on multi-vicinal silicon surfaces studied by electron microscopy probes (SEM, TEM)

      DIAMOND AND RELATED MATERIALS
    25. Wang, BB; Wang, WL; Liao, KJ
      Theoretical analysis of ion bombardment roles in the bias-enhanced nucleation process of CVD diamond

      DIAMOND AND RELATED MATERIALS
    26. Shimokawa, S; Namiki, A; Gamo, MN; Ando, T
      Atomic hydrogen-induced abstraction of adsorbed deuterium atoms on the covalent solid surfaces

      DIAMOND AND RELATED MATERIALS
    27. Wang, YH; Lin, J; Huan, CHA; Feng, ZC; Chua, SJ
      Post-growth rapid thermal annealing effect on hydrogenated amorphous silicon carbide thin film

      DIAMOND AND RELATED MATERIALS
    28. Zubel, I
      The influence of atomic configuration of (h k l) planes on adsorption processes associated with anisotropic etching of silicon

      SENSORS AND ACTUATORS A-PHYSICAL
    29. Ragan, R; Min, KS; Atwater, HA
      Direct energy gap group IV semiconductor alloys and quantum dot arrays in SnxGe1-x/Ge and SnxSi1-x/Si alloy systems

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    30. Greve, DW
      Si-Ge-C growth and devices

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    31. Droopad, R; Yu, Z; Ramdani, J; Hilt, L; Curless, J; Overgaard, C; Edwards, JL; Finder, J; Eisenbeiser, K; Ooms, W
      Development of high dielectric constant epitaxial oxides on silicon by molecular beam epitaxy

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    32. Osten, HJ; Liu, JP; Bugiel, E; Mussig, HJ; Zaumseil, P
      Epitaxial growth of praseodymium oxide on silicon

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    33. Herbots, N; Shaw, JM; Hurst, QB; Grams, MP; Culbertson, RJ; Smith, DJ; Atluri, V; Zimmerman, P
      The formation of ordered, ultrathin SiO2/Si(100) interfaces grown on (1 x 1) Si(100)

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    34. Sano, K; Ohara, R; Kawakubo, T
      Growth of epitaxial SrTiO3 on epitaxial (Ti,Al)N/Si(100) substrate using Ti-buffer layer

      IEICE TRANSACTIONS ON ELECTRONICS
    35. Ishigaki, H; Yamada, T; Wakiya, N; Shinozaki, K; Mizutani, N
      Effect of the thickness of SiO2 under layer on the initial stage of epitaxial growth process of yttria-stabilized zirconia (YSZ) thin film deposited on Si(001) substrate

      JOURNAL OF THE CERAMIC SOCIETY OF JAPAN
    36. Ikeda, S
      Synthesis of highly oriented diamond film by microwave plasma enhanced CVDtechnique

      JOURNAL OF THE CERAMIC SOCIETY OF JAPAN
    37. Yoshida, T; Hara, T; Ii, T; Yoshida, H; Tanabe, T
      XANES analyses of silicon crystalline irradiated by nitrogen/oxygen ions

      JOURNAL OF SYNCHROTRON RADIATION
    38. Markworth, PR; Liu, X; Dai, JY; Fan, W; Marks, TJ; Chang, RPH
      Coherent island formation of Cu2O films grown by chemical vapor depositionon MgO(110)

      JOURNAL OF MATERIALS RESEARCH
    39. Goldfarb, I; Briggs, GAD
      Surface studies of phase formation in Co-Ge system: Reactive deposition epitaxy versus solid-phase epitaxy

      JOURNAL OF MATERIALS RESEARCH
    40. Zemva, P; Lesar, A; Kobal, I; Senegacnik, M
      Thermal decomposition of N2O over ZnO: Kinetic isotope effects study

      LANGMUIR
    41. Major, RC; Zhu, XY
      Two-step approach to the formation of organic monolayers on the silicon oxide surface

      LANGMUIR
    42. Kirsch, PD; Ekerdt, JG
      Interfacial chemistry of the Sr/SiOxNy/Si(100) nanostructure

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
    43. Ohta, H; Hamaguchi, S
      Molecular dynamics simulation of silicon and silicon dioxide etching by energetic halogen beams

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
    44. Kiyota, Y; Inada, T
      Sticking coefficient of boron and phosphorus on silicon during vapor-phasedoping

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
    45. Nam, SW; Yoo, JH; Kim, HY; Kang, SK; Ko, DH; Yang, CW; Lee, HJ; Cho, MH; Ku, JH
      Study of ZrO2 thin films for gate oxide applications

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
    46. Zoethout, E; Zandvliet, HJW; Poelsema, B
      Adatom assisted stabilization of ad dimers on Ge(001)

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
    47. Nishizawa, M; Yasuda, T; Yamasaki, S; Shinohara, M; Kamakura, N; Kimura, Y; Niwano, M
      Chlorosilane adsorption on clean Si surfaces: Scanning tunneling microscopy and Fourier-transform infrared absorption spectroscopy studies

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
    48. Mitsui, T; Hill, E; Curtis, R; Ganz, E
      Adsorption of TPCl4 and initial stages of Ti growth on Si(001)

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
    49. Barranco, A; Mejias, JA; Espinos, JP; Caballero, A; Gonzalez-Elipe, AR; Yubero, F
      Chemical stability of Sin+ species in SiOx (x < 2) thin films

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
    50. Cho, MH; Ko, DH; Choi, YK; Lyo, IW; Jeong, K; Whang, CN; Kim, HJ; Noh, DY
      Thickness dependence of Y2O3 films grown on an oxidized Si surface

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
    51. Kirsch, PD; Ekerdt, JG
      Interfacial chemistry of the Ba/SiOxNy/Si(100) nanostructure

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
    52. Halicioglu, T
      Calculated energetics for adsorption and desorption steps during etching of Si(110) surface by Cl

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
    53. Chen, YJ; Kang, ET; Neoh, KG
      Functionalization of PTFE and Si(100) surfaces by consecutive graft polymerization of glycidyl and aniline monomers

      SYNTHETIC METALS
    54. Dunbar, A; Halsall, M; Dawson, P; Bangert, U; Shiraki, Y; Miura, M
      Strain seeding of Ge quantum dots grown on Si (001)

      PHYSICA STATUS SOLIDI B-BASIC RESEARCH
    55. Narayanamurti, V; Kozhevnikov, M
      Beem imaging and spectroscopy of buried structures in semiconductors

      PHYSICS REPORTS-REVIEW SECTION OF PHYSICS LETTERS
    56. Yeom, HW
      Self-organized quantum wires on semiconductor surfaces: the new frontier provided by reduced dimensionality

      JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA
    57. Yoshinobu, J; Yamashita, Y; Yasui, F; Mukai, K; Akagi, K; Tsuneyuki, S; Hamaguchi, K; Machida, S; Nagao, M; Sato, T; Iwatsuki, M
      Reaction mechanism and adsorbed states of cyclohexene on Si(100)(2x1)

      JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA
    58. Takakuwa, Y; Ishida, F
      Real-time monitoring of the growth and decomposition of SiO2 layers on Si(001) by a combined method of RHEED and AES

      JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA
    59. Hul'ko, O; McCaffrey, JP; Zinke-Allmang, M
      Role of ripening and defects in the formation of mesotaxial cobalt-disilicide layers

      ULTRAMICROSCOPY
    60. Russell, JN; Butler, JE; Wang, GT; Bent, SF; Hovis, JS; Hamers, RJ; D'Evelyn, MP
      pi bond versus radical character of the diamond (100)-2 x 1 surface

      MATERIALS CHEMISTRY AND PHYSICS
    61. Ree, JB; Chang, KS; Moon, KH; Kim, YH
      Reaction of gas-phase bromine atom with chemisorbed hydrogen atoms on a silicon(100)-(2x1) surface

      BULLETIN OF THE KOREAN CHEMICAL SOCIETY
    62. Wang, SJ; Ong, CK; Xu, SY; Chen, P; Chai, JW; Tjiu, WC; Pan, JS; Huan, ACH; Feng, W; Lim, JS; Yoo, WJ; Choi, WK
      RHEED and XPS studies of the decomposition of silicon dioxide by the bombardment of metal ions

      SURFACE REVIEW AND LETTERS
    63. Chambers, JJ; Busch, BW; Schulte, WH; Gustafsson, T; Garfunkel, E; Wang, S; Maher, DM; Klein, TM; Parsons, GN
      Effects of surface pretreatments on interface structure during formation of ultra-thin yttrium silicate dielectric films on silicon

      APPLIED SURFACE SCIENCE
    64. Xie, F; von Blanckenhagen, P; Wu, J; Liu, JW; Zhang, QZ; Chen, YC; Wang, EG
      Contamination of Si surfaces in ultrahigh vacuum and formation of SiC islands

      APPLIED SURFACE SCIENCE
    65. Le Normand, F; Arnault, JC; Pecoraro, S; Werckmann, J
      Formation of beta-SiC nanocrystals on Si(111) monocrystal during the HFCVDof diamond

      APPLIED SURFACE SCIENCE
    66. Fu, CC; Weissmann, M; Saul, A
      Finite temperature simulation of ad-dimer diffusion between dimer row and trough on Si(001)

      APPLIED SURFACE SCIENCE
    67. Shinohara, M; Kimura, Y; Shoji, D; Niwano, M
      Infrared study of carbon incorporation during chemical vapor deposition ofSiC using methylsilanes

      APPLIED SURFACE SCIENCE
    68. Hingerl, K; Balderas-Navarro, RE; Bonanni, A; Tichopadek, P; Schmidt, WG
      On the origin of resonance features in reflectance difference data of silicon

      APPLIED SURFACE SCIENCE
    69. He, ZH; Leung, KT
      Surface processes on Si(111)7x7 and SiO2 mediated by low-energy ion irradiation in CF4

      APPLIED SURFACE SCIENCE
    70. Roche, J; Ryan, P; Hughes, GJ
      Core level photoemission studies of the sulphur terminated Ge(100) surface

      APPLIED SURFACE SCIENCE
    71. Wu, JX; Ma, MS; Zhu, JS; Ji, MR
      The interaction of cesium-oxide overlayers with Ge (111) as a function of annealing temperature

      APPLIED SURFACE SCIENCE
    72. Siew, HL; Qiao, MH; Chew, CH; Mok, KF; Chan, L; Xu, GQ
      Adsorption and reaction of NH3 on Ti/Si(100)

      APPLIED SURFACE SCIENCE
    73. Guo, HS; Souda, R
      Vacancies and adatoms complexes on silicon surface

      APPLIED SURFACE SCIENCE
    74. Sanders, M; Craig, JH
      HREELS study of electron irradiation effects on ammonia adsorbed on the Ge(100) surface

      APPLIED SURFACE SCIENCE
    75. Kubo, O; Ryu, JT; Tani, H; Harada, T; Kobayashi, T; Katayama, M; Oura, K
      STM study of structural changes on Si(100)2 x 1-Sb surface induced by atomic hydrogen

      APPLIED SURFACE SCIENCE
    76. Kojima, D; Makihara, K; Shi, J; Hashimoto, M
      Structure and electrical property of platinum film biased dc-sputter-deposited on silicon

      APPLIED SURFACE SCIENCE
    77. Teraoka, Y; Yoshigoe, A
      Commissioning of surface chemistry end-station in BL23SU of SPring-8

      APPLIED SURFACE SCIENCE
    78. Jiang, XX; Jiang, Z; Jiang, W; Jia, Q; Zheng, W; Xian, D; Wang, X
      Study of strain and composition of the self-organized GE dots by grazing incident X-ray diffraction

      NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT
    79. Gustafsson, T; Lu, HC; Busch, BW; Schulte, WH; Garfunkel, E
      High-resolution depth profiling of ultrathin gate oxides using medium-energy ion scattering

      NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
    80. Quinteros, CL; Tzvetkov, T; Qin, X; Jacobs, DC
      Reactive scattering of O+ on oxidized Si(001)

      NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
    81. Rout, B; Kamila, J; Ghose, SK; Mahapatra, DP; Dev, BN
      Characterization of microstructures formed on MeV ion-irradiated silver films on Si(111) surfaces

      NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
    82. Aoki, T; Matsuo, J; Yamada, I
      Cluster size effect on reactive sputtering by fluorine cluster impact using molecular dynamics simulation

      NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
    83. Azevedo, GD; Dias, JF; Behar, M; Grande, PL; dos Santos, JHR
      Angular dependence for the energy loss of channeled He ions near the Si < 110 > and < 111 > directions

      NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
    84. Zielasek, V; Liu, F; Zhao, YG; Maxson, JB; Lagally, MG
      Surface stress-induced island shape transition in Si(001) homoepitaxy - art. no. 201320

      PHYSICAL REVIEW B
    85. Sen, P; Ciraci, S; Batra, IP; Grein, CH
      Te covered Si(001): A variable surface reconstruction - art. no. 193310

      PHYSICAL REVIEW B
    86. Kim, W; Kim, H; Lee, G; Hong, YK; Lee, K; Hwang, C; Kim, DH; Koo, JY
      Initial adsorption configurations of acetylene molecules on the Si(001) surface - art. no. 193313

      PHYSICAL REVIEW B
    87. O'Brien, JL; Schofield, SR; Simmons, MY; Clark, RG; Dzurak, AS; Curson, NJ; Kane, BE; McAlpine, NS; Hawley, ME; Brown, GW
      Towards the fabrication of phosphorus qubits for a silicon quantum computer - art. no. 161401

      PHYSICAL REVIEW B
    88. Boucaud, P; Sauvage, S; Elkurdi, M; Mercier, E; Brunhes, T; Le Thanh, V; Bouchier, D; Kermarrec, O; Campidelli, Y; Bensahel, D
      Optical recombination from excited states in Ge/Si self-assembled quantum dots - art. no. 155310

      PHYSICAL REVIEW B
    89. Bulbul, MM; Cakmak, M; Srivastava, GP; Colakoglu, K
      Effect of hydrogenation on the adsorption of Ge on Si(001) - art. no. 155318

      PHYSICAL REVIEW B
    90. Demkov, AA; Zhang, XD; Drabold, DA
      Towards a first-principles simulation and current-voltage characteristic of atomistic metal-oxide-semiconductor structures - art. no. 125306

      PHYSICAL REVIEW B
    91. Hoshino, T; Nishioka, Y
      Mechanism of inward oxygen diffusion on H-, OH-, and nonterminated siliconsurfaces - art. no. 125322

      PHYSICAL REVIEW B
    92. Romero, MT; Rodriguez, JA; Takeuchi, N
      First-principles calculations of the adsorption of S on the Si(001)c(4X2) surface - art. no. 075317

      PHYSICAL REVIEW B
    93. de Wijs, GA; Selloni, A
      Patterning of Si(001) with halogens: Surface structure as a function of the halogen chemical potential - art. no. 041402

      PHYSICAL REVIEW B
    94. Fink, A; Widdra, W; Wurth, W; Keller, C; Stichler, M; Achleitner, A; Comelli, G; Lizzit, S; Baraldi, A; Menzel, D
      Core-level spectroscopy of hydrocarbons adsorbed on Si(100)-(2X1): A systematic comparison - art. no. 045308

      PHYSICAL REVIEW B
    95. Falkenberg, G; Johnson, RL; Takeuchi, N
      Scanning tunneling microscopy and ab initio calculations: c(4X8) reconstructions of Pb on Si and Ge(001) - art. no. 035304

      PHYSICAL REVIEW B
    96. Simon, L; Stoffel, M; Sonnet, P; Kubler, L; Stauffer, L; Selloni, A; De Vita, A; Car, R; Pirri, C; Garreau, G; Aubel, D; Bischoff, JL
      Atomic structure of carbon-induced Si(001)c(4X4) reconstruction as a Si-Sihomodimer and C-Si heterodimer network - art. no. 035306

      PHYSICAL REVIEW B
    97. Cai, J; Wang, JS
      Reconstruction of Si(001) and adsorption of Si adatoms and ad-dimers on the surface: Many-body potential calculations - art. no. 035402

      PHYSICAL REVIEW B
    98. Mao, MY; Miranda, PB; Kim, DS; Shen, YR
      Kinetics of molecular hydrogen dissociative adsorption on Si(111) studied by sum-frequency vibrational spectroscopy and second harmonic generation - art. no. 035415

      PHYSICAL REVIEW B
    99. Takeuchi, N
      First-principles calculations of the atomic structure of the In-induced Si(001)-(4X3) reconstruction - art. no. 245325

      PHYSICAL REVIEW B
    100. Horsfield, AP; Fujitani, H
      Density functional study of the initial stage of the anneal of a thin Co film on Si - art. no. 235303

      PHYSICAL REVIEW B


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Documento generato il 27/10/20 alle ore 16:02:09