Catalogo Articoli (Spogli Riviste)

HELP
ATTENZIONE: attualmente gli articoli Current Contents (fonte ISI) a partire dall'anno 2002 sono consultabili sulla Risorsa On-Line

Le informazioni sugli articoli di fonte ISI sono coperte da copyright

La ricerca find articoli where soggetti phrase all words 'SI(001)' sort by level,fasc_key/DESCEND, pagina_ini_num/ASCEND ha restituito 1798 riferimenti
Si mostrano 100 riferimenti a partire da 1
Selezionare un intervallo

Per ulteriori informazioni selezionare i riferimenti di interesse.

    1. Kato, T; Kang, SY; Xu, X; Yamabe, T
      Possible dissociative adsorption of CH3OH and CH3NH2 on Si(100)-2 x 1 surface

      JOURNAL OF PHYSICAL CHEMISTRY B
    2. Hamaguchi, K; Machida, S; Nagao, M; Yasui, F; Mukai, K; Yamashita, Y; Yoshinobu, J; Kato, HS; Okuyama, H; Kawai, M; Sato, T; Iwatsuki, M
      Bonding and structure of 1,4-cyclohexadiene chemisorbed on Si(100)(2x1)

      JOURNAL OF PHYSICAL CHEMISTRY B
    3. Cao, XP; Coulter, SK; Ellison, MD; Liu, HB; Liu, JM; Hamers, RJ
      Bonding of nitrogen-containing organic molecules to the silicon(001) surface: The role of aromaticity

      JOURNAL OF PHYSICAL CHEMISTRY B
    4. Fink, A; Menzel, D; Widdra, W
      Symmetry and electronic structure of benzene adsorbed on single-domain Ge(100)-(2x1) and Ge/Si(100)-(2 x 1)

      JOURNAL OF PHYSICAL CHEMISTRY B
    5. Jung, YS; Choi, CH; Gordon, MS
      Adsorption of water on the Si(100) surface: An ab initio and QM/MM clusterstudy

      JOURNAL OF PHYSICAL CHEMISTRY B
    6. Lu, X; Zhang, Q; Lin, MC
      Adsorption of methanol, formaldehyde and formic acid on the Si(100)-2x1 surface: A computational study

      PHYSICAL CHEMISTRY CHEMICAL PHYSICS
    7. Smith, DJ; Todd, M; McMurran, J; Kouvetakis, J
      Structural properties of heteroepitaxial germanium-carbon alloys grown on Si (100)

      PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS ANDMECHANICAL PROPERTIES
    8. Yu, BD; Miyamoto, Y; Sugino, O; Sakai, A; Sasaki, T; Ohno, T
      Structural and electronic properties of metal-silicide/silicon interfaces:A first-principles study

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    9. LaBella, VP; Ding, Z; Bullock, DW; Emery, C; Thibado, PM
      Microscopic structure of spontaneously formed islands on the GaAs(001)-(2X4) reconstructed surface

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    10. Bashir, R; Chao, KJ; Kabir, AE
      Atomic force microscopy studies of self-assembled Si1-xGex islands produced by controlled relaxation of strained films

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    11. Park, JY; Phaneuf, RJ; Williams, ED
      Scanning tunneling spectroscopy of field-induced Au nanodots on ultrathin oxides on Si(100)

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    12. Nikiforov, AI; Cherepanov, VA; Pchelyakov, OP
      Investigation of Ge film growth on the Si(100) surface by recording diffractometry

      SEMICONDUCTORS
    13. Davydov, SY; Pavlyk, AV
      Calculation of the variation in the work function caused by adsorption of metal atoms on semiconductors

      SEMICONDUCTORS
    14. Vengrenovich, RD; Gudyma, YV; Yarema, SV
      Ostwald ripening of quantum-dot nanostructures

      SEMICONDUCTORS
    15. Masuda-Jindo, K; Kikuchi, R; Nishitani, SR
      Application of tight-binding and path probability methods to the junction relaxation of semiconductor heterostructures

      JOURNAL OF PHASE EQUILIBRIA
    16. Dollfus, P; Galdin, S; Hesto, P; Osten, HJ
      Band offsets and electron transport calculation for strained Si1-x-yGexCy/Si heterostructures

      JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
    17. Appelbaum, I; Wang, TR; Fan, SH; Joannopoulos, JD; Narayanamurti, V
      Can silicon dimers form logic gates?

      NANOTECHNOLOGY
    18. Brenig, W; Hilf, MF
      Reaction dynamics of H-2 and D-2 on Si(100) and Si(111)

      JOURNAL OF PHYSICS-CONDENSED MATTER
    19. Kamins, TI; Nauka, K; Williams, RS
      Effect of self-assembled Ge nanostructures on Si surface electronic properties

      APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
    20. Tung, RT
      Recent advances in Schottky barrier concepts

      MATERIALS SCIENCE & ENGINEERING R-REPORTS
    21. Mazzone, AM
      Boron segregation on a vicinal Si(100) surface

      COMPUTATIONAL MATERIALS SCIENCE
    22. Dalpian, GM; Fazzio, A; da Silva, AJR
      Influence of surface degrees of freedom on the adsorption of Ge ad-atoms on Si(100)

      COMPUTATIONAL MATERIALS SCIENCE
    23. Chen, Y; Ohlberg, DAA; Williams, RS
      Epitaxial growth of erbium silicide nanowires on silicon(001)

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    24. Vescan, L
      SiGe nanostructures by selective epitaxy and self-assembling

      MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING
    25. Kondo, D; Sakamoto, K; Takeda, H; Matsui, F; Ohta, T; Amemiya, K; Uchida, W; Kasuya, A
      Thermal effect in unoccupied molecular orbitals of C-60 molecules adsorbedon a Si(001)-(2 x 1) surface studied by NEXAFS

      JOURNAL OF SYNCHROTRON RADIATION
    26. Markworth, PR; Liu, X; Dai, JY; Fan, W; Marks, TJ; Chang, RPH
      Coherent island formation of Cu2O films grown by chemical vapor depositionon MgO(110)

      JOURNAL OF MATERIALS RESEARCH
    27. Ross, FM
      Dynamic studies of semiconductor growth processes using in situ electron microscopy

      MRS BULLETIN
    28. Greene, JE
      Atomic-level control during film growth under highly kinetically constrained conditions: H mediation and ultrahigh doping during Si1-xGex gas-source epitaxy

      MRS BULLETIN
    29. Zhang, Y; Tan, KL; Liaw, BY; Liaw, DJ; Kang, ET; Neoh, KG
      Thermal imidization of fluorinated poly(amic acid)s on Si(100) surfaces modified by plasma polymerization and deposition of glycidyl methacrylate

      LANGMUIR
    30. Laursen, T; Chandrasekhar, D; Hervig, RL; Mayer, JW; Smith, DJ; Jasper, C
      Fabrication and characterization of C implantation standards for Si1-x-yGexCy alloys

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
    31. Jernigan, GG; Thompson, PE
      Temperature dependence of atomic scale morphology in Si homoepitaxy between 350 and 800 degrees C on Si (100) by molecular beam epitaxy

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
    32. Hannon, JB; Tromp, RM
      Phase boundary fluctuations on Si(l11)

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
    33. Kim, KC; Park, CI; Roh, JI; Nahm, KS; Seo, YH
      Formation mechanism of interfacial voids in the growth of Sic films on Si substrates

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
    34. Zoethout, E; Zandvliet, HJW; Poelsema, B
      Adatom assisted stabilization of ad dimers on Ge(001)

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
    35. Tsubouchi, N; Chayahara, A; Mokuno, Y; Kinomura, A; Horino, Y
      Reflection high-energy electron diffraction study of ion-beam induced carbonization for 3C-SiC heteroepitaxial growth on Si (100)

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
    36. Ekiz, C; Keskin, M; Yalcin, O
      Metastable and unstable states of the Blume-Capel model obtained by the cluster variation method and the path probability method

      PHYSICA A
    37. Kahng, B; Jeong, H; Barabasi, AL
      Nanoscale structure formation on sputter eroded surface

      JOURNAL OF THE KOREAN PHYSICAL SOCIETY
    38. Yeom, HW
      Self-organized quantum wires on semiconductor surfaces: the new frontier provided by reduced dimensionality

      JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA
    39. Giovanelli, L; Papageorgiou, N; Terzian, G; Layet, JM; Mossoyan, JC; Mossoyan-Deneux, M; Gothelid, M; Le Lay, G
      Electronic structure of self-assembled organic/inorganic semiconductor interfaces: lead phthalocyanine on InSb and InAs(100)-4X2/c(8 X2)

      JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA
    40. Oh, JH; Nakamura, K; Ono, K; Oshima, M; Hirashita, N; Niwa, M; Toriumi, A; Kakizaki, A
      Initial oxidation features of Si(100) studied by Si2p core-level photoemission spectroscopy

      JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA
    41. Takakuwa, Y; Ishida, F
      Real-time monitoring of the growth and decomposition of SiO2 layers on Si(001) by a combined method of RHEED and AES

      JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA
    42. Dhanak, VR; Santoni, A; Grill, L; Petaccia, L
      A high temperature X-ray absorption and valence band spectroscopy study ofthe Si(100) surface

      JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA
    43. Bolhovityanov, YB; Pchelyakov, OP; Sokolov, LV; Nikiforov, AI; Voigtlander, B
      Self-organizing and self-assembling of GexSi1-x quantum dots - mechanisms of formation by MBE

      IZVESTIYA AKADEMII NAUK SERIYA FIZICHESKAYA
    44. Zhu, XY; Lee, SM; Kim, JY; Lee, YH; Chung, DC; Frauenheim, T
      Structural and vibrational properties of carbon impurities in crystalline silicon

      SEMICONDUCTOR SCIENCE AND TECHNOLOGY
    45. Rao, BV; Gruznev, D; Tambo, T; Tatsuyama, C
      Heteroepitaxial growth of high quality InSb films on Si(111) substrates using a two-step growth method

      SEMICONDUCTOR SCIENCE AND TECHNOLOGY
    46. Biswas, A; Basu, PK
      Estimated effect of germanium and carbon on the Early voltage of a Si1-x-yGexCy heterojunction bipolar transistor

      SEMICONDUCTOR SCIENCE AND TECHNOLOGY
    47. Huang, JY; Ye, ZZ; Qi, ZL; Que, D
      The growth of Si1-x-yGexCy alloys with high carbon content by ultra-high vacuum chemical vapor deposition

      JOURNAL OF MATERIALS SCIENCE LETTERS
    48. Xie, XP; Liang, MH; Choo, ZM; Li, S
      A comparative simulation study of silicon (001) surface reconstruction using different interatomic potentials

      SURFACE REVIEW AND LETTERS
    49. Katircioglu, S; Salman, SA; Erkoc, S
      Adsorption of water on single and double layer stepped Si(100) surfaces

      SURFACE REVIEW AND LETTERS
    50. Zaibi, MA; Sebenne, CA; Lacharme, JP
      Temperature-activated reactions of H2O and NH3 with H-passivated Si(111) surfaces

      SURFACE REVIEW AND LETTERS
    51. Salman, SA; Katircioglu, S; Erkoc, S
      Electronic band structure of stepped Si(100) surfaces

      SURFACE REVIEW AND LETTERS
    52. Salman, SA; Katircioglu, S; Erkoc, S
      Adsorption of hydrogen and oxygen on single and double layer stepped Si(100) surfaces

      INTERNATIONAL JOURNAL OF MODERN PHYSICS B
    53. Brunev, DV; Neizvestny, IG; Shwartz, NL; Yanovitskaya, ZS
      Influence of Schwoebel barriers and surface diffusion anisotropy on surface relief evolution during epitaxial growth: Simulation

      PHYSICS OF LOW-DIMENSIONAL STRUCTURES
    54. Vostokov, NV; Gusev, SA; Drozdov, YN; Krasilnik, ZF; Lobanov, DN; Mesters, N; Miura, M; Moldavskaya, LD; Novikov, AV; Pascual, J; Postnikov, VV; Shiraki, Y; Uakhimchuk, VA; Usami, N; Valakh, MY
      The relation between composition and sizes of GeSi/Si(001) islands grown at different temperatures

      PHYSICS OF LOW-DIMENSIONAL STRUCTURES
    55. Nikitina, EA; Sheka, EF; Aono, M
      Comparative study of the Si(100) surface reconstruction under successive dehydrogenation. I. Si(100)(1x1)-H surface

      PHYSICS OF LOW-DIMENSIONAL STRUCTURES
    56. Rosei, F; Fontana, S
      Comment on "Surface morphology and electronic structure of Ge/Si(111) 7 x 7 system" [A. Lobo et al., Appl. Surf. Sci. 173 (2001) 270]

      APPLIED SURFACE SCIENCE
    57. Kahng, SJ; Choi, BY; Kuk, Y
      Sputter-erosion dynamics of Ni(110) surface

      APPLIED SURFACE SCIENCE
    58. Berrie, CL; Liu, B; Leone, SR
      Defect controlled diffusion in the epitaxial growth of germanium on Si(100)

      APPLIED SURFACE SCIENCE
    59. Sokolov, NS; Suturin, SM
      MBE growth of calcium and cadmium fluoride nanostructures on silicon

      APPLIED SURFACE SCIENCE
    60. Hingerl, K; Balderas-Navarro, RE; Bonanni, A; Tichopadek, P; Schmidt, WG
      On the origin of resonance features in reflectance difference data of silicon

      APPLIED SURFACE SCIENCE
    61. Lobo, A; Gokhale, S; Kulkarni, SK
      Surface morphology and electronic structure of Ge/Si(111) 7 x 7 system

      APPLIED SURFACE SCIENCE
    62. Tagami, K; Sasaki, N; Tsukada, M
      Simulated nc-AFM images of Si(001) surface with nanotube tip

      APPLIED SURFACE SCIENCE
    63. Guo, HS; Souda, R
      Vacancies and adatoms complexes on silicon surface

      APPLIED SURFACE SCIENCE
    64. Zhang, QM; Tang, SP; Wallace, RM
      Proton trapping and diffusion in SiO2 thin films: a first-principles study

      APPLIED SURFACE SCIENCE
    65. Higai, S; Ohno, T; Sasaki, T
      A first-principles study on initial processes of a Ni adatom on the H-terminated Si(001)-(2 x 1) surface

      APPLIED SURFACE SCIENCE
    66. Urano, T; Watanabe, K; Hongo, S
      Metal induced step arrangement on Si(111) surface observed by LEED

      APPLIED SURFACE SCIENCE
    67. Kubo, O; Ryu, JT; Tani, H; Harada, T; Kobayashi, T; Katayama, M; Oura, K
      STM study of structural changes on Si(100)2 x 1-Sb surface induced by atomic hydrogen

      APPLIED SURFACE SCIENCE
    68. Yoshikawa, J; Kurokawa, S; Sakai, A
      Barrier-height imaging of Cs-adsorbed Si(111)

      APPLIED SURFACE SCIENCE
    69. Sakamoto, K; Wu, NJ; Natori, A; Yasunaga, H
      Surface electromigration of In on vicinal Si(001)

      APPLIED SURFACE SCIENCE
    70. Jiang, XX; Jiang, Z; Jiang, W; Jia, Q; Zheng, W; Xian, D; Wang, X
      Study of strain and composition of the self-organized GE dots by grazing incident X-ray diffraction

      NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT
    71. Mazzone, AM
      Ar and B low-energy implants into a vicinal silicon surface: A molecular dynamics study

      NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
    72. Koster, M; Urbassek, HM
      Modification of a-Si under 100 eV Si atom bombardment

      NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
    73. Osten, HJ; Rucker, H; Liu, JP; Heinemann, B
      Wider latitude for sophisticated devices by incorporating carbon into crystalline Si or SiGe

      MICROELECTRONIC ENGINEERING
    74. Voigtlander, B
      Fundamental processes in Si/Si and Ge/Si epitaxy studied by scanning tunneling microscopy during growth

      SURFACE SCIENCE REPORTS
    75. Yagi, K; Minoda, H; Degawa, M
      Step bunching, step wandering and faceting: self-organization at Si surfaces

      SURFACE SCIENCE REPORTS
    76. Rauscher, H
      The interaction of silanes with silicon single crystal surfaces: microscopic processes and structures

      SURFACE SCIENCE REPORTS
    77. Hwang, CC; Kang, TH; Kim, KJ; Kim, B; Chung, Y; Park, CY
      Temperature-induced metallization of the Si(100) surface - art. no. 201304

      PHYSICAL REVIEW B
    78. Zielasek, V; Liu, F; Zhao, YG; Maxson, JB; Lagally, MG
      Surface stress-induced island shape transition in Si(001) homoepitaxy - art. no. 201320

      PHYSICAL REVIEW B
    79. Mula, G; Adelmann, C; Moehl, S; Oullier, J; Daudin, B
      Surfactant effect of gallium during molecular-beam epitaxy of GaN on AlN (0001) - art. no. 195406

      PHYSICAL REVIEW B
    80. Hameed, S; Talagala, P; Naik, R; Wenger, LE; Naik, VM; Proksch, R
      Analysis of disordered stripe magnetic domains in strained epitaxial Ni(001) films - art. no. 184406

      PHYSICAL REVIEW B
    81. O'Brien, JL; Schofield, SR; Simmons, MY; Clark, RG; Dzurak, AS; Curson, NJ; Kane, BE; McAlpine, NS; Hawley, ME; Brown, GW
      Towards the fabrication of phosphorus qubits for a silicon quantum computer - art. no. 161401

      PHYSICAL REVIEW B
    82. Kubo, O; Kobayashi, T; Yamaoka, N; Saranin, AA; Zotov, AV; Ohnishi, H; Katayama, M; Oura, K
      Formation of a Si(100)c(8X2) surface phase using H-induced self-organization and H extraction - art. no. 153406

      PHYSICAL REVIEW B
    83. Nicholson, KT; Holl, MMB
      Infrared and density-functional-theory study of spherosiloxane-based modelsilicon/silicon oxide interfaces - art. no. 155317

      PHYSICAL REVIEW B
    84. Bulbul, MM; Cakmak, M; Srivastava, GP; Colakoglu, K
      Effect of hydrogenation on the adsorption of Ge on Si(001) - art. no. 155318

      PHYSICAL REVIEW B
    85. Boukari, S; Beaurepaire, E; Bulou, H; Carriere, B; Deville, JP; Scheurer, F; De Santis, M; Baudoing-Savois, R
      Influence of strain on the magnetocrystalline anisotropy in epitaxial Cr/Co/Pd(111) films - art. no. 144431

      PHYSICAL REVIEW B
    86. Reese, PJE; Miller, T; Chiang, TC
      Photoelectron holographic studies of As/Si(100) with sub-angstrom resolution - art. no. 113409

      PHYSICAL REVIEW B
    87. Steimer, C; Giesen, M; Verheij, L; Ibach, H
      Experimental determination of step energies from island shape fluctuations: A comparison to the equilibrium shape method for Cu(100), Cul(111), and Ag(111) - art. no. 085416

      PHYSICAL REVIEW B
    88. Qin, L; Teo, KL; Shen, ZX; Peng, CS; Zhou, JM
      Raman scattering of Ge/Si dot superlattices under hydrostatic pressure - art. no. 075312

      PHYSICAL REVIEW B
    89. Floreano, L; Cvetko, D; Bavdek, G; Benes, M; Morgante, A
      Order-disorder transition of the (3X3) Sn/Ge(111) phase - art. no. 075405

      PHYSICAL REVIEW B
    90. Itoh, M
      Kinetic Monte Carlo study of step asymmetry and stable step orientations on GaAs(001) - art. no. 045301

      PHYSICAL REVIEW B
    91. Fink, A; Widdra, W; Wurth, W; Keller, C; Stichler, M; Achleitner, A; Comelli, G; Lizzit, S; Baraldi, A; Menzel, D
      Core-level spectroscopy of hydrocarbons adsorbed on Si(100)-(2X1): A systematic comparison - art. no. 045308

      PHYSICAL REVIEW B
    92. Falkenberg, G; Johnson, RL; Takeuchi, N
      Scanning tunneling microscopy and ab initio calculations: c(4X8) reconstructions of Pb on Si and Ge(001) - art. no. 035304

      PHYSICAL REVIEW B
    93. Kerdiles, S; Hairie, A; Rizk, R; Guedj, C
      Vibrational-mode frequencies of substitutional carbon in Si1-xCx alloys - art. no. 205206

      PHYSICAL REVIEW B
    94. Dalpian, GM; Fazzio, A; da Silva, AJR
      Adsorption of monomers on semiconductors and the importance of surface degrees of freedom - art. no. 205303

      PHYSICAL REVIEW B
    95. Holy, V; Roch, T; Stangl, J; Daniel, A; Bauer, G; Metzger, TH; Zhu, YH; Brunner, K; Abstreiter, G
      Grazing incidence small-angle x-ray scattering study of self-organized SiGe wires - art. no. 205318

      PHYSICAL REVIEW B
    96. Mendoza, BS; Palummo, M; Onida, G; Del Sole, R
      Ab initio calculation of second-harmonic-generation at the Si(100) surface- art. no. 205406

      PHYSICAL REVIEW B
    97. Chan, LH; Altman, EI
      Effect of surface intermixing on the morphology of Sb-terminated Ge(100) surfaces - art. no. 195309

      PHYSICAL REVIEW B
    98. Pinzon, R; Urbassek, HM
      Implantation and damage under oblique low-energy Si self-bombardment - art. no. 195319

      PHYSICAL REVIEW B
    99. Gavrilenko, VI; Wu, RQ; Downer, MC; Ekerdt, JG; Lim, D; Parkinson, P
      Optical second-harmonic spectra of Si(001) with H and Ge adatoms: First-principles theory and experiment - art. no. 165325

      PHYSICAL REVIEW B
    100. Facsko, S; Kurz, H; Dekorsy, T
      Energy dependence of quantum dot formation by ion sputtering - art. no. 165329

      PHYSICAL REVIEW B


ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 26/10/20 alle ore 06:14:44