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La ricerca find articoli where soggetti phrase all words 'SHORT PERIOD SUPERLATTICES' sort by level,fasc_key/DESCEND, pagina_ini_num/ASCEND ha restituito 159 riferimenti
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    1. Kawanami, H
      Heteroepitaxial technologies of III-V on Si

      SOLAR ENERGY MATERIALS AND SOLAR CELLS
    2. Uchida, K; Miura, N; Issiki, F; Shiraki, Y
      Carrier localization in GaP/AlP type-II heterostructures in high magnetic fields

      PHYSICA B
    3. Krylyuk, S; Litovchenko, VG; Korbutyak, DV; Grahn, HT; Ploog, KH
      Time-resolved spectra and kinetics of the exciton photoluminescence in different types of GaAs/AlAs superlattices

      SUPERLATTICES AND MICROSTRUCTURES
    4. Sheu, JK; Tsai, JM; Shei, SC; Lai, WC; Wen, TC; Kou, CH; Su, YK; Chang, SJ; Chi, GC
      Low-operation voltage of InGaN/GaN light-emitting diodes with Si-doped In0.3Ga0.7N/GaN short-period superlattice tunneling contact layer

      IEEE ELECTRON DEVICE LETTERS
    5. Wohlert, DE; Pickrell, GW; Chang, KL; Hsieh, KC; Cheng, KY
      Self-assembled GaInAs quantum wire heterostructure design for temperature stabilized emission wavelength

      JOURNAL OF CRYSTAL GROWTH
    6. Mori, J; Asahi, H; Noh, JH; Fudeta, M; Watanabe, D; Matsuda, S; Asami, K; Seki, S; Matsui, Y; Tagawa, S; Gonda, S
      Characterization of self-organized GaP/InP quantum dots with scanning tunneling spectroscopy and time-resolved PL spectroscopy

      JOURNAL OF CRYSTAL GROWTH
    7. Lee, SR; Reno, JL; Follstaedt, DM
      Suppression of phase separation in (AlAs)(2 ML)(InAs)(2 ML) superlattices using Al0.48In0.52As monolayer insertions

      APPLIED PHYSICS LETTERS
    8. Ohtani, N; Domoto, C; Egami, N; Mimura, H; Ando, M; Nakayama, M; Hosoda, M
      Electric-field-induced combination of Wannier-Stark localization and type-I-type-II crossover in a marginal type-I GaAs/AlAs superlattice

      PHYSICAL REVIEW B
    9. Olafsen, LJ; Daniels-Race, T; Kendall, RE; Teitsworth, SW
      Photoluminescence of n-i-n GaAs/AlAs single quantum well structures under electric field bias

      SUPERLATTICES AND MICROSTRUCTURES
    10. Scholz, R; Jancu, JM; Beltram, F; Bassani, F
      Calculation of electronic states in semiconductor heterostructures with anempirical spds* tight-binding model

      PHYSICA STATUS SOLIDI B-BASIC RESEARCH
    11. Gonda, S; Asahi, H; Mori, J; Watanabe, D; Matsuda, S; Noh, JH; Fudeta, M; Asami, K; Seki, S; Matsui, Y; Tagawa, S
      Structural and optical characterization of self-formed GaP/InP quantum dots

      JOURNAL OF ELECTRONIC MATERIALS
    12. Mori, J; Asahi, H; Fudeta, M; Noh, JH; Watanabe, D; Matsuda, S; Asami, K; Narukawa, Y; Kawakami, Y; Fujita, S; Kaneko, T; Gonda, S
      Scanning tunneling microscopy and time-resolved photoluminiscence spectroscopy study of self-organized GaP/InP quantum dot structures

      APPLIED SURFACE SCIENCE
    13. Gourdon, C; Martins, D; Lavallard, P; Ivchenko, EL; Zheng, YL; Planel, R
      AlAs-monolayer dependence of the Gamma-X coupling in GaAs-AlAs type-II heterostructures

      PHYSICAL REVIEW B
    14. Jiang, JC; Schaper, AK; Spika, Z; Stolz, V
      Strain-induced modulation versus superlattice ordering in epitaxial (GaIn)P layers

      PHYSICAL REVIEW B
    15. Magri, R; Zunger, A
      Anticrossing and coupling of light-hole and heavy-hole states in (001) GaAs/AlxGa1-xAs heterostructures

      PHYSICAL REVIEW B
    16. Shilkrot, LE; Srolovitz, DJ; Tersoff, J
      Morphology evolution during the growth of strained-layer superlattices

      PHYSICAL REVIEW B
    17. Aristone, F; Goutiers, B; Gauffier, JL; Dmowski, L
      Effect of DX centers in the vertical transport properties of semiconductorsuperlattices

      BRAZILIAN JOURNAL OF PHYSICS
    18. Martins, D; Gourdon, C; Lavallard, P; Planel, R
      AlAs monolayer dependence of the radiative recombination rate in a type IIGaAs-AlAs double quantum well

      SOLID STATE COMMUNICATIONS
    19. Chang, CP
      Magneto-exciton in the thin AlAs/GaAs quantum well in an in-plane magneticfield

      SOLID STATE COMMUNICATIONS
    20. Nakayama, M
      Excitonic processes in GaAs/AlAs type-II superlattices

      JOURNAL OF LUMINESCENCE
    21. Wu, J; Zeng, YP; Sun, ZZ; Lin, F; Xu, B; Wang, ZG
      Self-assembled InAs quantum wires on InP(001)

      JOURNAL OF CRYSTAL GROWTH
    22. Gerthsen, D; Walter, T; Fischer, F; Gerhard, T; Waag, A; Landwehr, G
      Structural properties and relaxation behavior of short-period BeTe/ZnSe superlattices

      JOURNAL OF CRYSTAL GROWTH
    23. Jiang, JC; Schaper, AK; Spika, Z; Stolz, W
      Morphological aspects of continuous and modulated epitaxial growth of (GaIn)P

      JOURNAL OF APPLIED PHYSICS
    24. Follstaedt, DM; Reno, JL; Jones, ED; Lee, SR; Norman, AG; Moutinho, HR; Mascarenhas, A; Twesten, RD
      Effect of surface steps on the microstructure of lateral composition modulation

      APPLIED PHYSICS LETTERS
    25. Reusch, TCG; Wenderoth, M; Heinrich, AJ; Engel, KJ; Quaas, N; Sauthoff, K; Ulbrich, RG; Weber, ER; Uchida, K; Wegscheider, W
      Influence of short-range ordering on roughness of (AlGa)As interfaces studied with cross-sectional scanning tunneling microscopy

      APPLIED PHYSICS LETTERS
    26. Spencer, BJ; Voorhees, PW; Tersoff, J
      Stabilization of strained alloy film growth by a difference in atomic mobilities

      APPLIED PHYSICS LETTERS
    27. Wohlert, DE; Cheng, KY
      Temperature dependent polarization switching and band-gap anomalies in strained GaxIn1-xAs quantum wire heterostructures

      APPLIED PHYSICS LETTERS
    28. Tit, N
      Ordering of conduction band states in thin-layer (AlAs)(m)(GaAs)(n)(001) superlattices

      JOURNAL OF PHYSICS-CONDENSED MATTER
    29. Otsuka, N; Nishizawa, J; Kikuchi, H; Oyama, Y
      Self-limiting growth conditions on (001) InP by alternate triethylindium and tertiarybutylphosphine supply in ultrahigh vacuum

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
    30. Kim, TJ; Ko, YD; Kim, YD; Kwon, N
      Study on the splitting of E-2-peak in Si-Ge superlattice by spectroscopic ellipsometry

      JOURNAL OF THE KOREAN PHYSICAL SOCIETY
    31. Ito, H; Takano, T; Minami, F; Nagao, S; Gotoh, H
      Type-II photoluminescence from GaP/AlP/GaP quantum wells under hydrostaticpressure

      PHYSICA STATUS SOLIDI B-BASIC RESEARCH
    32. Kozyrev, SP; Vodopyanov, LK
      Vibrational infrared spectroscopy of HgTe-CdTe superlattices

      SEMICONDUCTOR SCIENCE AND TECHNOLOGY
    33. Gougam, AB; Gandit, P; Sicart, J; Robert, JL
      Negative magnetoresistance and electron localization in GaAs-AlAs superlattices

      SEMICONDUCTOR SCIENCE AND TECHNOLOGY
    34. Ghosh, S; Arora, BM; Kim, SJ; Noh, JH; Asahi, H
      Spectroscopic study of Ga-In-P based self-organized lateral superlattices

      SEMICONDUCTOR SCIENCE AND TECHNOLOGY
    35. Mohaidat, JM
      Dynamics of Gamma-X charge transfer in a double-barrier structure in the presence of pressure-induced Gamma-X mixing

      SEMICONDUCTOR SCIENCE AND TECHNOLOGY
    36. Hirose, S; Yamaura, H; Munekata, H
      Atomic layer epitaxy of AlP and (AlP)(n)(GaP)(n) superlattice using ethyldimethylamine alane as a new aluminum source

      APPLIED SURFACE SCIENCE
    37. Usami, N; Sugita, T; Ohta, T; Issiki, F; Shiraki, Y; Uchida, K; Miura, N
      Magnetophotoluminescence spectroscopy of AlGaP-based neighboring confinement structures

      PHYSICAL REVIEW B-CONDENSED MATTER
    38. Mattila, T; Wang, LW; Zunger, A
      Electronic consequences of lateral composition modulation in semiconductoralloys

      PHYSICAL REVIEW B-CONDENSED MATTER
    39. Capinski, WS; Maris, HJ; Ruf, T; Cardona, M; Ploog, K; Katzer, DS
      Thermal-conductivity measurements of GaAs/AlAs superlattices using a picosecond optical pump-and-probe technique

      PHYSICAL REVIEW B-CONDENSED MATTER
    40. Otsuka, N; Nishizawa, J; Kikuchi, H; Oyama, Y
      Self-limiting growth of InP by alternate trimethylindium and tertiarybutylphosphine supply in ultrahigh vacuum

      JOURNAL OF CRYSTAL GROWTH
    41. Ghosh, S; Arora, BM; Kim, SJ; Noh, JH; Asahi, H
      Spectroscopic study of self-organized quantum dot like structures in Ga-In-P superlattices on (311) GaAs

      JOURNAL OF APPLIED PHYSICS
    42. Jourba, S; Gendry, M; Marty, O; Pitaval, M; Hollinger, G
      High-quality highly strained InGaAs quantum wells grown on InP using (InAs)(n)(GaAs)(0.25) fractional monolayer superlattices

      APPLIED PHYSICS LETTERS
    43. Cheng, YC; Tai, KC; Chou, ST; Huang, KF; Lin, WJ; Lin, ACH
      Reduction of spontaneous surface segregation in (InP)(2)/(GaP)(2) quantum wells grown on tilted substrates

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    44. Fujimoto, Y; Yonezu, H; Irino, S; Samonji, K; Momose, K; Ohshima, N
      High-quality GaAsxP1-x/In0.13Ga0.87P quantum well structure grown on Si substrate with a very few threading dislocations

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    45. Otsuka, N; Nishizawa, J; Kikuchi, H; Oyama, Y
      Self-limiting growth of specular InP layer by alternate injection of triethylindium and tertiarybutylphosphine in ultrahigh vacuum

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    46. WOHLERT DE; MOY AM; CHOU LJ; CHENG KY; HSIEH KC
      TEMPERATURE STABILIZED 1.55 MU-M PHOTOLUMINESCENCE IN STRAINED GAXIN1-XAS QUANTUM-WIRE HETEROSTRUCTURES

      Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena
    47. Lemos, V; Sergio, CS; Lima, AP; Quivy, AA; Enderlein, R; Leite, JR; Carvalho, W
      Optical characterization of GaAs/AlAs multiple quantum wells interfaces

      RADIATION EFFECTS AND DEFECTS IN SOLIDS
    48. GHOSH S; ARORA BM; KIM SJ; ASAHI H
      POLARIZATION ANISOTROPY IN ROOM-TEMPERATURE CONTACTLESS ELECTROREFLECTANCE SPECTRUM OF SELF-ORGANIZED LATERAL COMPOSITIONAL SUPERLATTICES

      Superlattices and microstructures
    49. HOSODA M; OHTANI N; MIMURA H; TOMINAGA K; WATANABE T; INOMATA H; FUJIWARA K
      CARRIER TRANSPORT AFFECTED BY GAMMA-X TRANSFER IN TYPE-I GAAS ALAS SUPERLATTICES/

      Physical review. B, Condensed matter
    50. NAKAYAMA M; ANDO M; KUMAMOTO Y; NISHIMURA H; OHTANI N; EGAMI N; FUJIWARA K; HOSODA M
      PHOTOLUMINESCENCE DETECTION OF THE X-ELECTRON RESONANCE IN A GAAS ALAS TYPE-II SUPERLATTICE/

      Physical review. B, Condensed matter
    51. GOURDON C; MASHKOV IV; LAVALLARD P; PLANEL R
      SPECTROSCOPIC EVIDENCE OF THE DISSYMMETRY OF DIRECT AND INVERTED INTERFACES IN GAAS ALAS TYPE-II SUPERLATTICES/

      Physical review. B, Condensed matter
    52. SMITH JM; KLIPSTEIN PC; GREY R; HILL G
      RESONANT-TUNNELING BETWEEN TRANSVERSE-X STATES IN GAAS ALAS DOUBLE-BARRIER STRUCTURES UNDER ELEVATED HYDROSTATIC-PRESSURE/

      Physical review. B, Condensed matter
    53. IPATOVA IP; MALYSHKIN VG; MARADUDIN AA; SHCHUKIN VA; WALLIS RF
      KINETIC INSTABILITY OF SEMICONDUCTOR ALLOY GROWTH

      Physical review. B, Condensed matter
    54. ZHANG Y; MASCARENHAS A
      ELECTRONIC AND OPTICAL-PROPERTIES OF LATERALLY COMPOSITION-MODULATED ALXIN1-XAS, GAXIN1-XP, AND GAXIN1-XAS ALLOYS

      Physical review. B, Condensed matter
    55. Goni, AR; Syassen, K
      Optical properties of semiconductors under pressure

      HIGH PRESSURE IN SEMICONDUCTOR PHYSICS I
    56. Klipstein, PC
      Tunneling under pressure: High-pressure studies of vertical transport in semiconductor heterostructures

      HIGH PRESSURE IN SEMICONDUCTOR PHYSICS II
    57. CHANG CP; CHEN RB; LU YT
      MAGNETOEXCITON IN THE THIN ALAS GAAS QUANTUM-WELL/

      Solid state communications
    58. TAKAGI Y; YONEZU H; SAMONJI K; TSUJI T; OHSHIMA N
      GENERATION AND SUPPRESSION PROCESS OF CRYSTALLINE DEFECTS IN GAP LAYERS GROWN ON MISORIENTED SI(100) SUBSTRATES

      Journal of crystal growth
    59. TAKANO Y; HISAKA M; FUJII N; SUZUKI K; KUWAHARA K; FUKE S
      REDUCTION OF THREADING DISLOCATIONS BY INGAAS INTERLAYER IN GAAS-LAYERS GROWN ON SI SUBSTRATES

      Applied physics letters
    60. MATTILA T; BELLAICHE L; WANG LW; ZUNGER A
      ELECTRONIC-STRUCTURE INDUCED BY LATERAL COMPOSITION MODULATION IN GAINAS ALLOYS

      Applied physics letters
    61. NOH JH; ASAHI H; KIM SJ; GONDA S
      SCANNING-TUNNELING-MICROSCOPY STUDY ON SELF-FORMATION PROCESS OF QUANTUM-DOT STRUCTURES BY THE GROWTH OF GAP INP SHORT-PERIOD SUPERLATTICESON GAAS(311)A SUBSTRATE/

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    62. KITAEV YE; PANFILOV AG; TRONC P; EVARESTOV RA
      ELECTRON STATE SYMMETRIES AND OPTICAL-TRANSITIONS IN SEMICONDUCTOR SUPERLATTICES .1. (GAAS)(M)(ALAS)(N) GROWN ALONG THE [001] DIRECTION

      Journal of physics. Condensed matter
    63. GILLILAND GD
      PHOTOLUMINESCENCE SPECTROSCOPY OF CRYSTALLINE SEMICONDUCTORS

      Materials science & engineering. R, Reports
    64. AHN JY; JEONG SY; MOH HJ; SHIM K
      ELECTRONIC-STRUCTURE OF (GAP)(N) (ALP)(N) SUPERLATTICES/

      Journal of the Korean Physical Society
    65. OHTA T; USAMI N; ISSIKI F; SHIRAKI Y
      EFFECTS OF TENSILE STRAIN ON THE OPTICAL-PROPERTIES OF AN ALGAP-BASEDNEIGHBORING CONFINEMENT STRUCTURE

      Semiconductor science and technology
    66. IPATOVA IP; MALYSHKIN VG; SHCHUKIN VA; MARADUDIN AA; WALLIS RF
      KINETIC INSTABILITY IN THE EPITAXIAL-GROWTH OF SEMICONDUCTOR SOLID-SOLUTIONS

      PHYSICS OF LOW-DIMENSIONAL STRUCTURES
    67. YI H; RAZEGHI M
      GENERALIZED K-CENTER-DOT-P PERTURBATION-THEORY FOR ATOMIC-SCALE SUPERLATTICES

      Physical review. B, Condensed matter
    68. HOSODA M; OHTANI N; TOMINAGA K; MIMURA H; WATANABE T
      ANOMALOUSLY LARGE NEGATIVE DIFFERENTIAL RESISTANCE DUE TO GAMMA-CHI RESONANCES IN TYPE-I GAAS ALAS SUPERLATTICES/

      Physical review. B, Condensed matter
    69. STADELE M; MAJEWSKI JA; VOGL P
      STABILITY AND BAND OFFSETS OF POLAR GAN SIC(001) AND ALN/SIC(001) INTERFACES/

      Physical review. B, Condensed matter
    70. FORNARI M; CHEN HH; FU L; GRAFT RD; LOHRMANN DJ; MORONI S; PARRAVICINI GP
      ELECTRONIC-STRUCTURE AND WAVE-FUNCTIONS OF INTERFACE STATES IN HGTE-CDTE QUANTUM-WELLS AND SUPERLATTICES

      Physical review. B, Condensed matter
    71. GLUTSCH S; LEFEBVRE P; CHEMLA DS
      OPTICAL-ABSORPTION OF TYPE-II SUPERLATTICES

      Physical review. B, Condensed matter
    72. HOSODA M; MIMURA H; OHTANI N; TOMINAGA K; FUJITA K; WATANABE T; INOMATA H; NAKAYAMA M
      OBSERVATION OF GAMMA-X RESONANCES IN TYPE-I GAAS ALAS SEMICONDUCTOR SUPERLATTICES - ANOMALY IN PHOTOLUMINESCENCE/

      Physical review. B, Condensed matter
    73. LIMA ICD; WEBER G; REINECKE TL
      GAMMA-X HYBRIDIZATION EFFECTS ON THE CARRIER SUBBAND TRANSITION TIMESIN TYPE-I GAAS-ALAS QUANTUM-WELLS

      Solid state communications
    74. NAGAO S; FUJII K; FUJIMORI T; GOTOH H; ITO H; MINAMI F
      RADIATIVE DECAY IN TYPE-II GAP ALP/GAP QUANTUM-WELLS/

      Journal of crystal growth
    75. NAKATA Y; UEDA O; NISHIKAWA Y; MUTO S; YOKOYAMA N
      INAS GAAS INPLANE STRAINED SUPERLATTICES GROWN ON SLIGHTLY MISORIENTED (110)INP SUBSTRATES BY MOLECULAR-BEAM EPITAXY/

      Journal of crystal growth
    76. YOKOZEKI M; YONEZU H; TSUJI T; OHSHIMA N
      PASSIVATION OF MISFIT DISLOCATIONS BY ATOMIC-HYDROGEN IRRADIATION IN LATTICE-MISMATCHED HETEROEPITAXY

      Journal of crystal growth
    77. LIN HT; RICH DH; KONKAR A; CHEN P; MADHUKAR A
      CARRIER RELAXATION AND RECOMBINATION IN GAAS ALGAAS QUANTUM HETEROSTRUCTURES AND NANOSTRUCTURES PROBED WITH TIME-RESOLVED CATHODOLUMINESCENCE/

      Journal of applied physics
    78. RICH DH; TANG Y; LIN HT
      LINEARLY POLARIZED AND TIME-RESOLVED CATHODOLUMINESCENCE STUDY OF STRAIN-INDUCED LATERALLY ORDERED (INP)(2) (GAP)(2) QUANTUM WIRES/

      Journal of applied physics
    79. YU ET
      CROSS-SECTIONAL SCANNING-TUNNELING-MICROSCOPY

      Chemical reviews
    80. CASTRILLO P; ARMELLES G; SILVEIRA JP; BRIONES F; BARBOLLA J
      OPTICAL PHONONS OF STRAINED GAAS GAP QUANTUM-WELLS STUDIED BY RAMAN-SPECTROSCOPY/

      Applied physics letters
    81. ODONNELL KP; WOGGON U
      GROUND-STATE EXCITON LASING IN CDSE SUBMONOLAYERS INSERTED IN A ZNSE MATRIX - COMMENT

      Applied physics letters
    82. VOISIN P
      WANNIER-STARK EFFECTS IN SEMICONDUCTOR SUPERLATTICES

      Annales de physique
    83. TSUJI T; YONEZU H; YOKOZEKI M; TAKAGI Y; FUJIMOTO Y; OHSHIMA N
      DEFECT-CONTROLLED SELECTIVE EPITAXIAL-GROWTH OF GAP ON SI BY MIGRATION-ENHANCED EPITAXY UNDER ATOMIC-HYDROGEN IRRADIATION

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    84. NOH JH; ASAHI H; KIM SJ; GONDA S
      SCANNING TUNNELING MICROSCOPY SPECTROSCOPY STUDY OF SELF-ORGANIZED QUANTUM-DOT STRUCTURES FORMED IN GAP/INP SHORT-PERIOD SUPERLATTICES/

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    85. OHTANI N; HOSODA M; MIMURA H; TOMINAGA K; WATANABE T
      STARK LADDER PHOTOLUMINESCENCE OF X-STATES IN GAAS ALAS TYPE-I SUPERLATTICES/

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    86. DYNNA M; MARTY A; GILLES B; PATRAT G
      ORDERING AND THE RELAXATION OF ELASTIC STRAIN IN THIN AU-NI FILMS GROWN ON AU(001)

      Acta materialia
    87. YAMANAKA K; MOMOSE H; MORI N; HAMAGUCHI C; ARIMOTO H; IMANAKA Y; SHIMAMOTO Y; MIURA N
      ANGULAR DEPENDENT CYCLOTRON-RESONANCE IN SHORT-PERIOD (GAAS)(N) (ALAS)(N) SUPERLATTICES/

      Physica. B, Condensed matter
    88. OH DK; SUH KS; CHOO H; KIM HM; PYUN KE; PARK HM; NAHM S
      LP-MOCVD GROWN (INAS)(M)(GAAS)(M) SHORT-PERIOD SUPERLATTICES ON INP

      Journal of electronic materials
    89. MIMURA H; HOSODA M; OHTANI N; TOMINAGA K; FUJITA K; WATANABE T; GRAHN HT; FUJIWARA K
      ELECTRIC-FIELD DOMAIN FORMATION IN TYPE-II SUPERLATTICES

      Physical review. B, Condensed matter
    90. KIM DS; KO HS; KIM YM; RHEE SJ; HOHNG SC; YEE YH; KIM WS; WOO JC; CHOI HJ; IHM J; WOO DH; KANG KN
      PERCOLATION OF CARRIERS THROUGH LOW POTENTIAL CHANNELS IN THICK ALXGA1-XAS (X-LESS-THAN-0.35) BARRIERS

      Physical review. B, Condensed matter
    91. LANGBEIN W; KALT H; HVAM JM
      LUMINESCENCE DYNAMICS IN TYPE-II GAAS ALAS SUPERLATTICES NEAR THE TYPE-I TO TYPE-II CROSSOVER/

      Physical review. B, Condensed matter
    92. YU PY; SU ZP; KIM DS; KHIM JS; LIM YS; YEE YH; CHO YH; LEE JS; LEE JH; CHANG JS; CHOE BD; WOO DH; SHIN EJ; KIM D; ARYA K; SONG JJ
      PROBING OPTICAL-PHONON PROPAGATION IN GAAS ALXGA1-XAS QUANTUM-WELL SAMPLES VIA THEIR NONEQUILIBRIUM POPULATION/

      Physical review. B, Condensed matter
    93. TRIBE WR; KLIPSTEIN PC; SMITH GW; GREY R
      UNIAXIAL-STRESS INVESTIGATION OF THE PHONON-ASSISTED RECOMBINATION MECHANISMS ASSOCIATED WITH THE X-STATES IN TYPE-II GAAS ALAS SUPERLATTICES/

      Physical review. B, Condensed matter
    94. TANG Y; LIN HT; RICH DH; COLTER P; VERNON SM
      NONLINEAR-OPTICAL EFFECTS IN STRAIN-INDUCED LATERALLY ORDERED (INP)(2) (GAP)(2) QUANTUM WIRES/

      Physical review. B, Condensed matter
    95. ISSIKI F; FUKATSU S; OHTA T; SHIRAKI Y
      EFFICIENT GREEN LUMINESCENCE FROM A TYPE-II NEIGHBORING CONFINEMENT STRUCTURE REALIZED IN AN ALP GAP SYSTEM/

      Solid-state electronics
    96. OHTANI N; MIMURA H; TOMINAGA K; HOSODA M; WATANABE T; TANAKA G; FUJIWARA K
      ANOMALOUSLY DELAYED CARRIER TRANSPORT IN GAAS ALAS THIN-BARRIER SUPERLATTICES/

      Solid-state electronics
    97. KOBAYASHI Y; NAKAYAMA T; KAMIMURA H
      MULTI-QUANTUM-WELL EFFECTS ON ELECTRONIC-STRUCTURES AND OPTICAL-PROPERTIES OF GAP ALP SUPERLATTICE/

      Journal of the Physical Society of Japan
    98. HERMAN MA; SITTER H
      MBE GROWTH PHYSICS - APPLICATION TO DEVICE TECHNOLOGY

      Microelectronics
    99. MOY AM; CHEN AC; CHENG KY; CHOU LJ; HSIEH KC; TU CW
      VISIBLE WAVELENGTH (6470-ANGSTROM) GAXIN1-XP GAAS0.66P0.34 QUANTUM-WIRE HETEROSTRUCTURES/

      Journal of applied physics
    100. SMITH AR; CHAO KJ; SHIH CK; ANSELM KA; SRINIVASAN A; STREETMAN BG
      IDENTIFICATION OF FIRST AND 2ND LAYER ALUMINUM ATOMS IN DILUTE ALGAASUSING CROSS-SECTIONAL SCANNING-TUNNELING-MICROSCOPY

      Applied physics letters


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Documento generato il 28/10/20 alle ore 01:21:44