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La ricerca find articoli where soggetti phrase all words 'SEMICONDUCTOR-METAL PHOTODETECTORS' sort by level,fasc_key/DESCEND, pagina_ini_num/ASCEND ha restituito 73 riferimenti
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    1. Shi, JW; Gan, KG; Chiu, YJ; Chen, YH; Sun, CK; Yang, YJ; Bowers, JE
      Metal-semiconductor-metal traveling-wave photodetectors

      IEEE PHOTONICS TECHNOLOGY LETTERS
    2. Tsai, CD; Lee, CT
      Thermal reliability and performances of InGaP Schottky contact with Cu/Au and Au/Cu-MSM photodetectors

      JOURNAL OF ELECTRONIC MATERIALS
    3. Li, B; Lin, L; Tang, SN; Liu, YJ; Chen, RT
      Photonic radio frequency mixer using metal-semiconductor-metal photodetectors

      OPTICAL ENGINEERING
    4. Tsutsui, N; Ryzhii, V; Khmyrova, I; Vaccaro, PO; Taniyama, H; Aida, T
      High-frequency performance of lateral p-n junction photodiodes

      IEEE JOURNAL OF QUANTUM ELECTRONICS
    5. Laval, S
      Optical interconnects: the challenge

      COMPTES RENDUS DE L ACADEMIE DES SCIENCES SERIE IV PHYSIQUE ASTROPHYSIQUE
    6. He, L
      Low temperature deposition for high performance photodetector

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    7. Ozelo, HFB; de Barros, LEM; Nabet, B; Neto, LG; Romero, MA; Ramos, ACS; Swart, JW
      MSM photodetector with an integrated microlens array for improved optical coupling

      MICROWAVE AND OPTICAL TECHNOLOGY LETTERS
    8. Buchal, C; Loken, M; Lipinsky, T; Kappius, L; Mantl, S
      Ultrafast silicon based photodetectors

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
    9. Gvozdic, DM; Nikolic, PL; Radunovic, JB
      Optimization of a resonant cavity enhanced MSM photodetector

      SEMICONDUCTOR SCIENCE AND TECHNOLOGY
    10. Damayanthi, P; Joshi, RP; McAdoo, JA
      Calculations of hole transport characteristics in bulk GaSb with comparisons to GaAs

      JOURNAL OF APPLIED PHYSICS
    11. Holzman, JF; Vermeulen, FE; Elezzabi, AY
      Ultrafast photoconductive self-switching of subpicosecond electrical pulses

      IEEE JOURNAL OF QUANTUM ELECTRONICS
    12. Bond, SW; Vendier, O; Lee, M; Jung, S; Vrazel, M; Lopez-Lagunas, A; Chai, S; Dagnall, G; Brooke, M; Jokerst, NM; Wills, DS; Brown, A
      A three-layer 3-D silicon system using through-Si vertical optical interconnections and SiCMOS hybrid building blocks

      IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
    13. Averin, SV; Lyubchenko, VE; Potapov, VT
      Fiber-optic systems using millimeter-wave signals: A review

      JOURNAL OF COMMUNICATIONS TECHNOLOGY AND ELECTRONICS
    14. Radunovic, D; Radunovic, J
      Two-dimensional non-stationary numerical model for MSM structures

      INTERNATIONAL JOURNAL OF NUMERICAL MODELLING-ELECTRONIC NETWORKS DEVICES AND FIELDS
    15. Tsai, CD; Fu, CH; Lin, YJ; Lee, CT
      Study of InGaP/GaAs/InGaP MSM photodetectors using indium-tin-oxide as transparent and antireflection Schottky electrode

      SOLID-STATE ELECTRONICS
    16. Kato, K
      Ultrawide-band/high-frequency photodetectors

      IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES
    17. AVERIN SV; GULYAEV YV; ILEGEMS M; SACHOT R
      PULSED RESPONSE OF AN MSM PHOTODIODE AT HIGH OPTICAL RADIATION ENERGIES

      Quantum electronics
    18. SPAZIANI SM; VACCARO K; LORENZO JP
      HIGH-PERFORMANCE SUBSTRATE-REMOVED INGAAS SCHOTTKY PHOTODETECTORS

      IEEE photonics technology letters
    19. CHIU YJ; FLEISCHER SB; BOWERS JE
      HIGH-SPEED LOW-TEMPERATURE-GROWN GAAS P-I-N TRAVELING-WAVE PHOTODETECTOR

      IEEE photonics technology letters
    20. HE L; COSTELLO MJ; CHENG KY; WOHLERT DE
      ENHANCED SCHOTTKY-BARRIER ON INGAAS FOR HIGH-PERFORMANCE PHOTODETECTOR APPLICATION

      Journal of vacuum science & technology. A. Vacuum, surfaces, and films
    21. YOUTZ AE; NABET B
      ROLE OF INTERMEDIATE TEMPERATURE MOLECULAR-BEAM EPITAXY-GROWN GAAS DEFECTS IN TUNNELING AND DIFFUSION

      Journal of applied physics
    22. VACCARO K; SPAZIANI SM; MARTIN EA; LORENZO JP
      GIGAHERTZ INGAAS-BASED VERTICAL SCHOTTKY DIODE OPTICAL-DETECTORS BY SUBSTRATE REMOVAL

      IEEE journal of quantum electronics
    23. YUANG RH; CHYI JI
      GAAS MSM PHOTODETECTORS WITH RECESSED ANODE AND OR CATHODE/

      IEEE journal of quantum electronics
    24. KOLLAKOWSKI S; BOTTCHER EH; STRITTMATTER A; BIMBERG D
      HIGH-SPEED INGAAS INALGAAS/INP WAVE-GUIDE-INTEGRATED MSM PHOTODETECTORS FOR 1.3-1.55-MU-M WAVELENGTH RANGE/

      Electronics Letters
    25. DROGE E; BOTTCHER EH; KOLLAKOWSKI S; STRITTMATTER A; BIMBERG D; REIMANN O; STEINGRUBER R
      78GHZ DISTRIBUTED INGAAS MSM PHOTODETECTOR

      Electronics Letters
    26. CULP J; NABET B; CASTRO F; ANWAR A
      INTERMEDIATE TEMPERATURE GROWN GAAS ALGAAS PHOTODETECTOR WITH LOW DARK CURRENT AND HIGH-SENSITIVITY/

      Applied physics letters
    27. Stuart, HR; Hall, DG
      Island size effects in nanoparticle-enhanced photodetectors

      APPLIED PHYSICS LETTERS
    28. DECORBY RG; MACDONALD RI; SHARMA R; GOUIN F; NOAD J; PUETZ N
      FREQUENCY-DOMAIN DEMONSTRATION OF TRANSIT-TIME-LIMITED, LARGE-AREA INGAP-INP-INGAAS MSM PHOTODETECTORS

      IEEE photonics technology letters
    29. FAY P; WOHLMUTH W; CANEAU C; CHANDRASEKHAR S; ADESIDA I
      HIGH-SPEED DIGITAL AND ANALOG PERFORMANCE OF LOW-NOISE INTEGRATED MSM-HEMT PHOTORECEIVERS

      IEEE photonics technology letters
    30. DAVIDSON AC; WISE FW; COMPTON RC; EMERSON DT; SHEALY JR; CURRIE M; WANG CC
      HIGH-PERFORMANCE MSM PHOTODETECTORS USING CU SCHOTTKY CONTACTS

      IEEE photonics technology letters
    31. YUANG RH; SHIEH JL; CHYI JI; CHEN JS
      OVERALL PERFORMANCE IMPROVEMENT IN GAAS MSM PHOTODETECTORS BY USING RECESSED-CATHODE STRUCTURE

      IEEE photonics technology letters
    32. FERGUSON I; TRAN CA; KARLICEK RF; FENG ZC; STALL R; LIANG S; LU Y; JOSEPH C
      GAN AND ALGAN METAL-SEMICONDUCTOR-METAL PHOTODETECTORS

      Materials science & engineering. B, Solid-state materials for advanced technology
    33. GVOZDIC DM; RADUNOVIC JB
      APPLICATION OF CONFORMAL MAPPING IN MODELING THE RESPONSE OF AN MSM PHOTODETECTOR

      International journal of numerical modelling
    34. FAY P; ARAFA M; WOHLMUTH WA; CANEAU C; CHANDRASEKHAR S; ADESIDA I
      DESIGN, FABRICATION, AND PERFORMANCE OF HIGH-SPEED MONOLITHICALLY INTEGRATED INALAS INGAAS/INP MSM/HEMT PHOTORECEIVERS/

      Journal of lightwave technology
    35. YOUTZ AE; NABET B; CASTRO F
      DEFECT STATE ASSISTED TUNNELING IN INTERMEDIATE TEMPERATURE MOLECULAR-BEAM EPITAXY-GROWN GAAS

      Journal of electronic materials
    36. SMITH AW; PARKS JW; HARALSON JN; BRENNAN KF
      A SMOOTHED BOUNDARY-CONDITION FOR REDUCING NONPHYSICAL FIELD EFFECTS

      IEEE transactions on computer-aided design of integrated circuits and systems
    37. DUNN GM; REES GJ; DAVID JPR
      MONTE-CARLO SIMULATION OF IMPACT IONIZATION IN PHOTODETECTORS

      Semiconductor science and technology
    38. GVOZDIC DM; RADUNOVIC JB
      TRANSIT-TIME OF ELECTRONS AND HOLES IN MICRON AND SUBMICRON MSM PHOTODETECTORS

      Semiconductor science and technology
    39. TEICHERT J; BISCHOFF L; HAUSMANN S
      FABRICATION OF MSM DETECTOR STRUCTURES ON SILICON BY FOCUSED ION-BEAMIMPLANTATION

      Microelectronic engineering
    40. RUDERS F; KIM J; HACKE M; MESTERS S; BUCHAL C; MANTL S
      VERTICAL MSM PHOTODIODES IN SILICON-BASED ON EPITAXIAL SI COSI2/SI/

      Thin solid films
    41. GAO W; BERGER PR; ZYDZIK GJ; OBRYAN HM; SIVCO DL; CHO AY
      IN0.53CA0.47AS MSM PHOTODIODES WITH TRANSPARENT CTO SCHOTTKY CONTACTSAND DIGITAL SUPERLATTICE GRADING

      I.E.E.E. transactions on electron devices
    42. YONEYAMA M; SHIBATA T; KAWAMURA Y; TAKAHASHI R; ENOKI T; NAGATSUMA T; YAITA M
      A DIFFERENTIAL PHOTOCONDUCTIVE AND GATE WITH BE-DOPED LOW-TEMPERATURE-GROWN INGAAS-INALAS MQW MSM-PDS

      IEEE journal of quantum electronics
    43. JI LH; HEURING VP
      IMPACT OF GATE FAN-IN AND FAN-OUT LIMITS ON OPTOELECTRONIC DIGITAL CIRCUITS

      Applied optics
    44. CHYI JI; CHIEN YJ; YUANG RH; SHIEH JL; PAN JW; CHEN JS
      REDUCTION OF HOLE TRANSIT-TIME IN GAAS MSM PHOTODETECTORS BY P-TYPE DELTA-DOPING

      IEEE photonics technology letters
    45. BURM J; EASTMAN LF
      LOW-FREQUENCY GAIN IN MSM PHOTODIODES DUE TO CHARGE ACCUMULATION AND IMAGE FORCE LOWERING

      IEEE photonics technology letters
    46. XIANG A; WOHLMUTH W; FAY P; KANG SM; ADESIDA I
      MODELING OF INGAAS MSM PHOTODETECTOR FOR CIRCUIT-LEVEL SIMULATION

      Journal of lightwave technology
    47. DYKAAR DR; KEIL UD
      ULTRAFAST ELECTRICAL SIGNAL GENERATION, PROPAGATION AND DETECTION

      Optical and quantum electronics
    48. GVOZDIC DM; RADUNOVIC JB
      THE INFLUENCE OF ELECTRON INTERVALLEY TRANSFER ON RESPONSE PULSE-WIDTH OF THE MSM PHOTODETECTOR

      International journal of infrared and millimeter waves
    49. MAILE BE; HACKBARTH T; WAAS T
      IMPACT OF PROXIMITY CORRECTION ON DEVICE YIELD IN ELECTRON-BEAM DEFINITION OF MSM-DETECTORS

      Microelectronic engineering
    50. SONG KC; MATIN MA; ROBINSON B; SIMMONS JG; THOMPSON DA; MASCHER P
      HIGH-PERFORMANCE INP INGAAS-BASED MSM PHOTODETECTOR OPERATING AT 1.3-1.5-MU-M/

      Solid-state electronics
    51. HURD CM; MCKINNON WR
      BIAS VOLTAGE PROPAGATION IN A SEMI-INSULATOR - EFFECT ON THE IMPULSE-RESPONSE OF AN INGAAS-FE PLANAR PHOTODETECTOR

      Journal of applied physics
    52. BURM J; LITVIN KI; MARTIN GH; SCHAFF WJ; EASTMAN LF
      MONOLITHIC MILLIMETER-WAVE OPTICAL RECEIVERS

      IEEE transactions on microwave theory and techniques
    53. WEHMANN HH; TANG GP; KLOCKENBRINK R
      DARK-CURRENT ANALYSIS OF INGAAS-MSM-PHOTODETECTORS ON SILICON SUBSTRATES

      I.E.E.E. transactions on electron devices
    54. GVOZDIC DM; RADUNOVIC JB
      NONSTATIONARY RESPONSE OF MSM PHOTODETECTORS

      I.E.E.E. transactions on electron devices
    55. CHEN JW; KIM DK; DAS MB
      TRANSIT-TIME LIMITED HIGH-FREQUENCY RESPONSE CHARACTERISTICS OF MSM PHOTODETECTORS

      I.E.E.E. transactions on electron devices
    56. YUANG RH; CHYI JI
      EFFECTS OF FINGER WIDTH ON LARGE-AREA INGAAS MSM PHOTODETECTORS

      Electronics Letters
    57. ZHOU X
      ON THE PHYSICS OF FEMTOSECOND ELECTRICAL PULSE GENERATION IN TRANSMISSION-LINE GAPS

      IEE proceedings. Optoelectronics
    58. FRESSER HS; PRINS FE; KERN DP
      LOW-ENERGY-ELECTRON DETECTION IN MICROCOLUMNS

      Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena
    59. YUANG RH; SHIEH HC; CHIEN YJ; CHAN YJ; CHYI JI; LIN W; TU YK
      HIGH-PERFORMANCE LARGE-AREA INGAAS MSM PHOTODETECTORS WITH A PSEUDOMORPHIC INGAP CAP LAYER

      IEEE photonics technology letters
    60. AVERIN SV; KAMINSKII ESF; ROSKOS KG; GELEN KI; KERSTING R; PLETTNER I; LEO K; KOL A; SPANGENBERG B; KURTS K; HOLLRICHER O
      SUPERFAST MECHANISM OF VERTICAL DRIFT OF CURRENT CARRIERS IN MSM HETEROBARRIER STRUCTURES

      Zurnal tehniceskoj fiziki
    61. HURD CM; MCKINNON WR
      2-DIMENSIONAL NUMERICAL-SIMULATION OF THE PULSE RESPONSE OF A SEMIINSULATING INGAAS-FE PHOTODETECTOR

      Journal of applied physics
    62. FRANKEL MY; CARRUTHERS TF; KYONO CS
      ANALYSIS OF ULTRAFAST PHOTOCARRIER TRANSPORT IN ALINAS-GAINAS HETEROJUNCTION BIPOLAR-TRANSISTORS

      IEEE journal of quantum electronics
    63. KOLLAKOWSKI S; SCHADE U; BOTTCHER EH; BIMBERG D
      FULLY PASSIVATED AR COATED INP INGAAS MSM PHOTODETECTORS/

      IEEE photonics technology letters
    64. AVERIN SV; VONKAMIENSKI ES; ROSKOS HG; KERSTING R; PLETTNER J; GEELEN HJ; KOHL A; SPAGENBERG B; LEO K; KURZ H; HOLLRICHER O
      HETEROBARRIER PHOTODIODE MSM STRUCTURES W ITH SUBPICOSECOND TEMPORAL RESOLUTION

      Kvantovaa elektronika
    65. MOGLESTUE C; BUOT F; ANDERSON WT
      THERMALLY-INDUCED FAILURE IN GAAS TRANSISTORS EXPOSED TO ALPHA-PARTICLE IRRADIATION

      Compel
    66. DUNN GM; WALKER AB; JEFFERSON JH; HERBERT DC
      MONTE-CARLO SIMULATION OF GAAS OPTICALLY ACTIVATED SWITCHES

      Semiconductor science and technology
    67. HURD CM; MCKINNON WR
      MODELING THE BEHAVIOR OF PHOTOGENERATED CHARGE IN SEMIINSULATING GAAS

      Journal of applied physics
    68. GVOZDIC DM; RADUNOVIC JB; ELAZAR JM
      AN ANALYTICAL EXPRESSION FOR THE ELECTRIC-FIELD IN MSM STRUCTURES

      International journal of infrared and millimeter waves
    69. AVERIN SV; KOHL A; MULLER R; KUSTERS AM; WISSER J; HEIME K
      N-GA0,47IN0,53AS LOW DARK CURRENT HIGH-SP EED MSM PHOTODETECTORS

      RADIOTEHNIKA I ELEKTRONIKA
    70. SAFRANKOVA J; PORGES M; LALINSKY T; MOZOLOVA Z; HUDEK P; KOSTIC I; KRAUS J; VONWENDORFF W; TEGUDE FJ; JAGER D
      PHOTOELECTRICAL PROPERTIES OF GAAS MSM PHOTODETECTOR COMPATIBLE WITH PSEUDOMORPHIC HETEROSTRUCTURE MESFET

      Physica status solidi. a, Applied research
    71. LIU MY; CHOU SY; ALEXANDROU S; WANG CC; HSIANG TY
      110 GHZ SI MSM PHOTODETECTORS

      I.E.E.E. transactions on electron devices
    72. BOTTCHER EH; HIERONYMI F; KUHL D; DROGE E; BIMBERG D
      TRANSIENT-RESPONSE OF LATERAL PHOTODETECTORS

      Applied physics letters
    73. OHSAWA J; HASHIMOTO N; MIGITAKA M
      CARRIER-LIFETIME-LIMITED FAST PHOTOCONDUCTIVE PHOTODETECTORS ON IRON-DIFFUSED GAAS

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS


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Documento generato il 12/08/20 alle ore 00:51:47