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La ricerca find articoli where soggetti phrase all words 'SEMICONDUCTOR JUNCTION LASERS' sort by level,fasc_key/DESCEND, pagina_ini_num/ASCEND ha restituito 296 riferimenti
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    1. Kitatani, T; Nakahara, K; Kondow, M; Uomi, K; Tanaka, T
      A 1.3-mu m GaInNAs/GaAs single-quantum-well laser diode with a high characteristic temperature over 200 K

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    2. Martinez-Reyes, HL; Reynoso-Hernandez, JA; Mendieta, FJ
      DC and RF techniques for computing the series resistance of the equivalentelectrical circuit for semiconductor lasers

      MICROWAVE AND OPTICAL TECHNOLOGY LETTERS
    3. KITATANI T; KONDOW M; NAKAHARA K; LARSON MC; UOMI K
      TEMPERATURE-DEPENDENCE OF THE THRESHOLD CURRENT AND THE LASING WAVELENGTH IN 1.3-MU-M GAINNAS GAAS SINGLE-QUANTUM-WELL LASER-DIODE/

      Optical review
    4. FANG RY; BERTONE D; MELIGA M; MAGNETTI G; MORELLO G; MURGIA S; OLIVETI G; PAOLETTI R; ROSSI G
      1.55-MU-M INGAASP-INP SPOT-SIZE-CONVERTED (SSC) LASER WITH SIMPLE TECHNOLOGICAL PROCESS

      IEEE photonics technology letters
    5. FANG RY; BERTONE D; MELIGA M; MONTROSSET I; OLIVETI G; PAOLETTI R
      LOW-COST 1.55-MU-M INGAASP-INP SPOT SIZE CONVERTED (SSC) LASER WITH CONVENTIONAL ACTIVE LAYERS

      IEEE photonics technology letters
    6. ERBERT G; BEISTER G; BUGGE F; MAEGE J; RESSEL P; SEBASTIAN J; VOGEL K; WENZEL H; WEYERS M
      STABLE OPERATION OF INGAAS INGAP/ALGAAS (LAMBDA=1020 NM) LASER-DIODES/

      Electronics Letters
    7. CHO HS; PARK KH; LEE JK; JANG DH; KIM JS; PARK KS; PARK CS; PYUN KE
      UNBALANCED FACET OUTPUT POWER AND LARGE SPOT SIZE IN 1.3-MU-M TAPEREDACTIVE STRIPE LASERS

      Electronics Letters
    8. LEAR KL; HOU HQ; BANAS JJ; HAMMONS BE; FURIOLI J; OSINSKI M
      VERTICAL-CAVITY LASERS ON P-DOPED SUBSTRATES

      Electronics Letters
    9. LIN CF; KU PC; HSUEH YL; JUANG CS
      OPTICAL SWITCHING IN 2-MODE SEMICONDUCTOR-LASERS VIA GAIN OR LOSS MODULATION

      Electronics Letters
    10. LIN CH; YANG RQ; ZHANG D; MURRY SJ; PEI SS; ALLERMAN AA; KUTZ SR
      TYPE-II INTERBAND QUANTUM CASCADE LASER AT 3.8-MU-M

      Electronics Letters
    11. ZHANG G; OVTCHINNIKOV A; NAPPI J; SMEKALIN K; SAVOLAINEN P; PESSA M; ASONEN H
      FAR-FIELD, EFFICIENCY AND LOSS OF 980NM INGAAS GAINASP/GAINP SCH QUANTUM-WELL LASERS/

      Electronics Letters
    12. WU YA; CHANGHASNAIN CJ
      YIELD THEORY FOR DIODE-LASER FABRICATION

      Electronics Letters
    13. PLYAVENEK AG; LYUBARSKII AV
      MODEL FOR CARRIER CAPTURE AND ESCAPE IN MULTI-QUANTUM-WELL LASERS - DETERMINATION OF EFFECTIVE CAPTURE TIME AND DIFFERENTIAL GAIN

      Electronics Letters
    14. WANG DN; SHU C
      DUAL-WAVELENGTH PICOSECOND PULSE GENERATION USING A SINGLE GRATING AND A MICHELSON INTERFEROMETER IN A SELF-INJECTION SEEDING SCHEME

      Electronics Letters
    15. KHRUSHCHEV IY; KITCHER DJ; WILLIAMS KA; WHITE IH; LAUGHTON FR; PENTY RV
      PICOSECOND Q-SWITCHED BOW-TIE LASER-DIODE ARRAY

      Electronics Letters
    16. OBRIEN S; GEELS RS; PIANO WE; LANG RJ
      1.26W CW DIFFRACTION-LIMITED INGAASP FLARED AMPLIFIER AT 780 NM

      Electronics Letters
    17. DELORME F; GROSMAIRE S; GLOUKHIAN A; OUGAZZADEN A
      HIGH-POWER OPERATION OF WIDELY TUNABLE 1.55-MU-M DISTRIBUTED-BRAGG-REFLECTOR LASER

      Electronics Letters
    18. DEPPE DG; HUFFAKER DL
      HIGH SPATIAL COHERENCE VERTICAL-CAVITY SURFACE-EMITTING LASER USING ALONG MONOLITHIC CAVITY

      Electronics Letters
    19. DUTTA NK; HOBSON WS; ZYDZIK GJ; DEJONG JF; PARAYANTHAL P; PASSLACK M; CHAKRABARTI UK
      MIRROR PASSIVATION OF INGAAS LASERS

      Electronics Letters
    20. LACOMB R; WAGNER DK; DIMARCO L; CONNOLLY J
      STABLE OPERATION OF MULTIPLE-LATERAL-MODE RIDGE-WAVE-GUIDE LASERS FORHIGH-SPEED PRINTING

      Electronics Letters
    21. RALSTON JD; LI GP; MATHUR A; ROGERS G; LO T
      HIGH-POWER FIBER-COUPLED 1550 NM DFB LASER MODULES FOR EXTERNALLY-MODULATED FIBEROPTIC TRANSMISSION

      Electronics Letters
    22. AMERFOORT MR; SOOLE JBD; CANEAU C; LEBLANC HP; RAJHEL A; YOUTSEY C; ADESIDA I
      COMPACT ARRAYED-WAVE-GUIDE GRATING MULTIFREQUENCY LASER USING BULK ACTIVE MATERIAL

      Electronics Letters
    23. SEO DS; LIU HF
      WAVELENGTH-TUNABLE NEARLY TRANSFORM-LIMITED PULSE GENERATION BY EXTERNAL INJECTION-SEEDING OF A GAIN-SWITCHED FABRY-PEROT LASER

      Electronics Letters
    24. FUKUDA M; ICHIKAWA F; YAMADA Y; INOUE Y; KATO K; SATO H; SUGIE T; TOBA H; YOSHIDA J
      HIGHLY RELIABLE PLASTIC PACKAGING FOR LASER-DIODE AND PHOTODIODE MODULES USED FOR ACCESS NETWORK

      Electronics Letters
    25. BOTEZ D; MAWST LJ; BHATTACHARYA A; LOPEZ J; LI J; KUECH TF; IAKOVLEV VP; SURUCEANU GI; CALIMAN A; SYRBU AV; MORRIS J
      6W CW FRONT-FACET POWER FROM SHORT-CAVITY (0.5 MM), 100-MU-M STRIPE AL-FREE 0.98-MU-M-EMITTING DIODE-LASERS

      Electronics Letters
    26. HIDAKA T; MATSUURA S; TANI M; SAKAI K
      CW TERAHERTZ WAVE GENERATION BY PHOTOMIXING USING A 2-LONGITUDINAL-MODE LASER-DIODE

      Electronics Letters
    27. TSAI CY; TSAI CY
      EFFECTS OF CARRIER HEATING ON THE FREQUENCY CHIRPING OF SEMICONDUCTOR-LASERS

      Electronics Letters
    28. SALET P; GABORIT F; PAGNODROSSIAUX P; PLAIS A; DEROUIN E; PASQUIER J; JACQUET J
      ROOM-TEMPERATURE PULSED OPERATION OF 1.3 MU-M VERTICAL-CAVITY LASERS INCLUDING BOTTOM INGAASP INP MULTILAYER BRAGG MIRRORS/

      Electronics Letters
    29. MCDOUGALL SD; KOWALSKI OP; BRYCE AC; MARSH JH; IRONSIDE CN
      EXTENDED-CAVITY RIDGE-WAVE-GUIDE LASERS OPERATING AT 1.5-MU-M USING ASIMPLE DAMAGE-INDUCED QUANTUM-WELL INTERMIXING PROCESS

      Electronics Letters
    30. SHIMIZU T; OGURA I; YOKOYAMA H
      860 GHZ RATE ASYMMETRIC COLLIDING PULSE MODELOCKED DIODE-LASERS

      Electronics Letters
    31. OBRIEN S; ZHAO H; SCHOENFELDER A; LANG RJ
      9.3W CW (IN)ALGAAS 100-MU-M WIDE LASERS AT 970NM

      Electronics Letters
    32. ASRYAN LV; SURIS RA
      CHARACTERISTIC TEMPERATURE OF QUANTUM-DOT LASER

      Electronics Letters
    33. TESHIMA M; SATO K; KOGA M
      INJECTION LOCKING A WEAKLY OSCILLATING TOOTH OF ACTIVE MODELOCKED LASER-DIODE

      Electronics Letters
    34. SHEN A; BOUCHOULE S; CROZAT P; MATHOORASING D; LOURTIOZ JM; KAZMIERSKI C
      LOW TIMING JITTER OF GAIN-SWITCHED AND Q-SWITCHED LASER-DIODES FOR HIGH BIT-RATE OTDM APPLICATIONS

      Electronics Letters
    35. TAYAHI MB; DUTTA NK; HOBSON WS; VAKHSHOORI D; LOPATA J; WYNN J
      HIGH-POWER INGAAS GAASP/INGAP SURFACE-EMITTING LASER/

      Electronics Letters
    36. OTSUBO K; SHOJI H; KUSUNOKI T; SUZUKI T; UCHIDA T; NISHIJIMA Y; NAKAJIMA K; ISHIKAWA H
      HIGH T-0 (140K) AND LOW-THRESHOLD LONG-WAVELENGTH STRAINED-QUANTUM-WELL LASERS ON INGAAS TERNARY SUBSTRATES

      Electronics Letters
    37. KUHN J; GENG C; SCHOLZ F; SCHWEIZER H
      LOW-THRESHOLD GAINP ALGAINP RIDGE-WAVE-GUIDE LASERS/

      Electronics Letters
    38. YANG H; MAWST LJ; NESNIDAL M; LOPEZ J; BHATTACHARYA A; BOTEZ D
      10W NEAR-DIFFRACTION-LIMITED PEAK PULSED-POWER FROM AL-FREE, 0.98-MU-M-EMITTING PHASE-LOCKED ANTIGUIDED ARRAYS

      Electronics Letters
    39. CHIA KB; HALDAR MK; GARG HK; MENDIS FVC
      INFLUENCE OF LASER PARAMETERS ON STATICALLY CALCULATED CLIPPING DISTORTION IN SUBCARRIER MULTIPLEXED SYSTEMS

      Electronics Letters
    40. LEBERRE D; PERENNEC A; LEROY M; TOUTAIN S
      TIME-ANALYSIS METHOD FOR THE DESIGN OF LASER COMMAND CIRCUIT

      Electronics Letters
    41. LU B; OSINSKI JS; LANG RJ
      400MW CONTINUOUS-WAVE DIFFRACTION-LIMITED FLARED UNSTABLE RESONATOR LASER-DIODE AT 635NM

      Electronics Letters
    42. GARBUZOV DZ; MENNA RJ; MARTINELLI RU; ABELES JH; CONNOLLY JC
      HIGH-POWER CONTINUOUS AND QUASI-CONTINUOUS WAVE INGAASP INP BROAD-WAVE-GUIDE SEPARATE CONFINEMENT-HETEROSTRUCTURE MULTIQUANTUM-WELL DIODE-LASERS/

      Electronics Letters
    43. OHYA M; DOI K; FUJII H; ENDO K; OKUDA J; ANJIKI K
      HIGHLY RELIABLE OPERATION AT 80-DEGREES-C FOR 650NM 5MW ALGAINP LDS

      Electronics Letters
    44. KITAOKA Y; YOKOYAMA T; MIZUUCHI K; YAMAMOTO K; KATO M
      MODULATED BLUE 2ND-HARMONIC GENERATION USING DIRECT MODULATION OF DISTRIBUTED-BRAGG-REFLECTOR LASER-DIODE

      Electronics Letters
    45. MAO EH; HEINRICHSDORFF F; KROST A; BIMBERG D
      STUDY OF HIGH-FREQUENCY RESPONSE OF SELF-ORGANIZED STACKED QUANTUM-DOT LASERS AT ROOM-TEMPERATURE

      Electronics Letters
    46. KO J; HEGBLOM ER; AKULOVA Y; MARGALIT NM; COLDREN LA
      ALINGAAS ALGAAS STRAINED-LAYER 850 NM VERTICAL-CAVITY LASERS WITH VERY-LOW THRESHOLDS/

      Electronics Letters
    47. BULMAN GE; DOVERSPIKE K; SHEPPARD ST; WEEKS TW; KONG HS; DIERINGER HM; EDMOND JA; BROWN JD; SWINDELL JT; SCHETZINA JF
      PULSED OPERATION LASING IN A CLEAVED-FACET INGAN GAN MQW SCH LASER GROWN ON 6H-SIC/

      Electronics Letters
    48. GARBUZOV DZ; GOKHALE MR; DRIES JC; STUDENKOV P; MARTINELLI RU; CONNOLLY JC; FORREST SR
      13.3W QUASI-CONTINUOUS OPERATION OF 0.99-MU-M WAVELENGTH SCH-QW IN GAAS GAAS/INGAP BROADENED WAVE-GUIDE LASERS/

      Electronics Letters
    49. GAUGGEL HP; WINTERHOFF R; KUHN J; SCHOLZ F; SCHWEIZER H
      ROOM-TEMPERATURE OPERATION OF SINGLEMODE DBR LASERS AT 635NM

      Electronics Letters
    50. SUGIHWO F; LARSON MC; HARRIS JS
      WHISPERING-GALLERY MODE-OPERATION IN AIRGAP VERTICAL-CAVITY LASER STRUCTURE

      Electronics Letters
    51. ZELLMER H; BUTEAU S; TUNNERMANN A; WELLING H
      ALL-FIBER LASER SYSTEM WITH 0.1W OUTPUT POWER IN BLUE SPECTRAL RANGE

      Electronics Letters
    52. GAUGGEL HP; KUHN J; JERICHOW C; GENG C; SCHOLZ F; SCHWEIZER H
      LOW-THRESHOLD CW OPERATION OF GAINP ALGAINP DFB LASERS AT 680NM/

      Electronics Letters
    53. SATO S; OSAWA Y; SAITOH T; FUJIMURA I
      ROOM-TEMPERATURE PULSED OPERATION OF 1.3-MU-M GAINNAS GAAS LASER-DIODE/

      Electronics Letters
    54. HEIM PJS; FAN ZF; CHO SH; NAM K; DAGENAIS M; JOHNSON FG; LEAVITT R
      SINGLE-ANGLED-FACET LASER-DIODE FOR WIDELY TUNABLE EXTERNAL-CAVITY SEMICONDUCTOR-LASERS WITH HIGH SPECTRAL PURITY

      Electronics Letters
    55. SCHMIDT B; HAKIMI R; ILLEK S; AMANN MC
      TUNABLE TWIN-GUIDE (DFB) LASER WITH BURIED FACETS FOR REDUCED SPECTRAL LINEWIDTH BROADENING

      Electronics Letters
    56. HE X; MITCHELL C; SRINIVASAN S; PATEL R
      RELIABLE HIGH-POWER INGAAS ALGAAS (915NM) LASER-DIODES/

      Electronics Letters
    57. PEZESHKI B; OSINSKI JS; ZELINSKI M; OBRIEN S; MATHUR A
      660NM 250MW GAINP ALINP MONOLITHICALLY INTEGRATED MASTER OSCILLATOR POWER-AMPLIFIER/

      Electronics Letters
    58. HE X; UNG M; SRINIVASAN S; PATEL R
      155W-CW OPTICAL POWER FROM 1-CM MONOLITHIC ALGAAS INGAAS LASER-DIODE ARRAY/

      Electronics Letters
    59. VASSILIEV V; VELICHANSKY V; KERSTEN P; RIEHIE F
      INJECTION LOCKING OF A RED EXTENDED-CAVITY DIODE-LASER

      Electronics Letters
    60. IMAFUJI O; YURI M; HASHIMOTO T; ISHIDA M; MANNOH M; KAWATA T; OGAWA H; YOSHIKAWA A; ITOH K
      LOW OPERATING CURRENT AND HIGH-TEMPERATURE OPERATION OF 650NM ALGAINPVISIBLE LASER-DIODES WITH REAL REFRACTIVE-INDEX GUIDED SELF-ALIGNED STRUCTURE

      Electronics Letters
    61. SUHARA T; UEMUKAI M; YOSHIMOTO A; MATSUMOTO N; NISHIHARA H; IIO S; SUEHIRO M; WADA M
      MONOLITHIC INTEGRATION OF QW-DFB LASER MASTER OSCILLATOR POWER-AMPLIFIER AND GRATING OUTCOUPLER

      Electronics Letters
    62. UENOHARA H; GOKHALE MR; DRIES JC; FORREST SR
      LOW-THRESHOLD, COMPRESSIVELY-STRAINED INASP INGAASP AND STRAIN-COMPENSATED INASP/INGAP 1.3-MU-M LASERS GROWN BY GAS-SOURCE MOLECULAR-BEAM-EPITAXY/

      Electronics Letters
    63. FRANCIS DA; KIANG MH; SOLGAARD O; LAU KY; MULLER RS; CHANGHASNAIN CJ
      COMPACT 2D LASER-BEAM SCANNER WITH FAN LASER ARRAY AND SI MICROMACHINED MICROSCANNER

      Electronics Letters
    64. ANAN T; YAMADA M; TOKUTOME K; SUGOU S
      1.3-MU-M INASP INALGAAS MQW LASERS FOR HIGH-TEMPERATURE OPERATION/

      Electronics Letters
    65. QIAN Y; ZHU ZH; LO YH; HUFFAKER DL; DEPPE DG; HOU HQ; HAMMONS BE; LIN W; TU YK
      SUBMILLIAMP 1.3-MU-M VERTICAL-CAVITY SURFACE-EMITTING LASERS WITH THRESHOLD CURRENT-DENSITY OF LESS-THAN-500A CM(2)/

      Electronics Letters
    66. EMERY JY; DUCELLIER T; BACHMANN M; DOUSSIERE P; POMMEREAU F; NGO R; GABORIT F; GOLDSTEIN L; LAUBE G; BARRAU J
      HIGH-PERFORMANCE 1.55-MU-M POLARIZATION-INSENSITIVE SEMICONDUCTOR OPTICAL AMPLIFIER BASED ON LOW-TENSILE-STRAINED BULK GAINASP

      Electronics Letters
    67. HIROYAMA R; UETANI T; BESSHO Y; SHONO M; SAWADA M; IBARAKI A
      HIGH-POWER 630 NM BAND LASER-DIODES WITH STRAIN-COMPENSATED SINGLE-QUANTUM-WELL ACTIVE LAYER

      Electronics Letters
    68. DONG J; UBUKATA A; MATSUMOTO K
      LOW-THRESHOLD COMPRESSIVELY STRAINED INGAAS INGAASP QUANTUM-WELL DISTRIBUTED-FEEDBACK LASER AT 1.95-MU-M/

      Electronics Letters
    69. FAN JC; CHEN KY; LIN G; LEE CP
      STRIPE-GEOMETRY GAAS-INGAAS LASER-DIODE WITH BACK-SIDE CONTACT ON SILICON BY EPITAXIAL LIFT-OFF

      Electronics Letters
    70. HATORI N; MIZUTANI A; NISHIYAMA N; KOYAMA F; IGA K
      THRESHOLD REDUCTION OF P-TYPE DELTA-DOPED INGAAS GAAS QUANTUM-WELL LASERS BY USING AUTO-DOPING OF CARBON/

      Electronics Letters
    71. KHOO EA; PABLA AS; WOODHEAD J; DAVID JPR; GREY R; REES GJ
      LOW-THRESHOLD INGAAS ALGAAS LASERS GROWN ON (111)B GAAS SUBSTRATE/

      Electronics Letters
    72. LARSON MC; KONDOW M; KITATANI T; YAZAWA Y; OKAI M
      ROOM-TEMPERATURE CONTINUOUS-WAVE PHOTOPUMPED OPERATION OF 1.22-MU-M GAINNAS GAAS SINGLE-QUANTUM-WELL VERTICAL-CAVITY SURFACE-EMITTING LASER/

      Electronics Letters
    73. ZHANG T; MOTOKI Y
      SELF-PUMPED PHASE-CONJUGATION IN A CE-BATIO3 CRYSTAL PUMPED WITH A LASER-DIODE

      Electronics Letters
    74. CHEN TR; CHEN PC; UNGAR J; PASLASKI J; OH S; LUONG H; BARCHAIM N
      WIDE TEMPERATURE-RANGE LINEAR DFB LASERS WITH VERY-LOW THRESHOLD CURRENT

      Electronics Letters
    75. KAWANISHI S; OKAMOTO K; ISHII M; KAMATANI O; TAKARA H; UCHIYAMA K
      ALL-OPTICAL TIME-DIVISION-MULTIPLEXING OF 100-GBIT S SIGNAL BASED ON 4-WAVE-MIXING IN A TRAVELING-WAVE SEMICONDUCTOR-LASER AMPLIFIER/

      Electronics Letters
    76. OHKI A; OHNO T; MATSUOKA T; ICHIMURA Y
      CONTINUOUS-WAVE OPERATION OF ZNSE-BASED LASER-DIODES HOMOEPITAXIALLY GROWN ON SEMIINSULATING ZNSE SUBSTRATES

      Electronics Letters
    77. OSTER A; ERBERT G; WENZEL H
      GAIN SPECTRA MEASUREMENTS BY A VARIABLE STRIPE LENGTH METHOD WITH CURRENT INJECTION

      Electronics Letters
    78. SYRBU AV; FERNANDEZ J; BEHREND J; BERSETH CA; CARLIN JF; RUDRA A; KAPON E
      INGAAS INGAASP/INP EDGE EMITTING LASER-DIODES ON P-GAAS SUBSTRATES OBTAINED BY LOCALIZED WAFER FUSION/

      Electronics Letters
    79. DEBRAY JP; BOUCHE N; LEROUX G; RAJ R; QUILLEE M
      MONOLITHIC VERTICAL-CAVITY DEVICE LASING AT 1.55-MU-M IN INGAALAS SYSTEM

      Electronics Letters
    80. HEGBLOM ER; THIBEAULT BJ; NAONE RL; COLDREN LA
      VERTICAL-CAVITY LASERS WITH TAPERED OXIDE APERTURES FOR LOW SCATTERING LOSS

      Electronics Letters
    81. ISHIKAWA T; KOBAYASHI H; TAKEUCHI T; WATANABE T; YAMAMOTO T; FUJII T; OGITA S; KOBAYASHI M
      ZERO-BIAS MODULATION OF TAPERED-THICKNESS WAVE-GUIDE LASERS WITH SEMIINSULATING BLOCKING LAYER

      Electronics Letters
    82. VAINSHTEIN SN; KOSTAMOVAARA JT; KILPELA AJ; MAATTA KEA
      HIGH-SPEED, HIGH-CURRENT DRIVER FOR OPERATION WITH LOW OHMIC LOAD

      Electronics Letters
    83. SHORE KA; KANE DM
      CAVITY DECOUPLING IN EXTERNAL-CAVITY FM DIODE-LASERS

      Electronics Letters
    84. YAMAMOTO T; KOBAYASHI H; ISHIKAWA T; TAKEUCHI T; WATANABE T; FUJII T; OGITA S; KOBAYASHI M
      LOW-THRESHOLD CURRENT OPERATION OF 1.3-MU-M NARROW BEAM DIVERGENCE TAPERED-THICKNESS WAVE-GUIDE LASERS

      Electronics Letters
    85. GULGAZOV VN; ZHAO H; NAM D; MAJOR JS; KOCH TL
      TUNABLE HIGH-POWER ALGAAS DISTRIBUTED-BRAGG-REFLECTOR LASER-DIODES

      Electronics Letters
    86. OKAI M; LEALMAN IF; RIVERS LJ; DIX C; ARMES D; PERRIN SD; MARSHALL P; ROBERTSON MJ
      WAVELENGTH TUNABLE IN-LINE FABRY-PEROT LASER WITH LATERAL-GRATING ASSISTED VERTICAL CODIRECTIONAL COUPLED FILTER

      Electronics Letters
    87. KOZLOWSKI DA; YOUNG JS; ENGLAND JMC; PLUMB RGS
      LONGITUDINAL MODE CONTROL IN 1.3-MU-M FABRY-PEROT LASERS BY MODE SUPPRESSION

      IEE proceedings. Optoelectronics
    88. ESPANABOQUERA MC; PUERTANOTARIO A
      NOISE EFFECTS IN INJECTION-LOCKED LASER SIMULATION - PHASE JUMPS AND ASSOCIATED SPECTRAL COMPONENTS

      Electronics Letters
    89. FUKANO H; YOKOYAMA K; KADOTA Y; KONDO Y; UEKI M; YOSHIDA J
      UNIFORMLY BEAM EXPANDED 1.3-MU-M LASER-DIODES WITH THIN SEPARATE-CONFINEMENT HETEROSTRUCTURE LAYERS FOR HIGH COUPLING EFFICIENCY AND GOOD TEMPERATURE CHARACTERISTIC

      Electronics Letters
    90. PATACA DM; ROCHA ML; DAVEY RP; SMITH K; WYATT R; GUNNING P
      TRANSMISSION OF 5PS SOLITONS AT 1.32 MU-M OVER 50 KM OF STANDARD FIBER USING PRASEODYMIUM DOPED FLUORIDE FIBER AMPLIFIERS

      Electronics Letters
    91. SUZUKI K; KOYAMA F; MATSUTANI A; KATO J; MUKAIHARA T; IGA K
      MINIATURE SEMICONDUCTOR OPTICAL POWER SPLITTERS WITH SUBMICROMETER WIDE-APERTURE

      Electronics Letters
    92. BHATTACHARYA A; MAWST LJ; NESNIDAL MP; LOPEZ J; BOTEZ D
      0.4W CW DIFFRACTION-LIMITED BEAM AL FREE 0.98-MU-M WAVELENGTH 3 CORE ARROW-TYPE DIODE-LASERS

      Electronics Letters
    93. HALDAR MK; CHIA KB; MENDIS FVC
      DYNAMIC CONSIDERATIONS IN OVERMODULATION OF SEMICONDUCTOR-LASER DIODES

      Electronics Letters
    94. SWAMINATHAN V; REYNOLDS CL; GEVA M
      EFFECT OF ZN ON THE ELECTROOPTICAL CHARACTERISTICS OF METALORGANIC CHEMICAL-VAPOR-DEPOSITION GROWN 1.3-MU-M INGAASP INP LASERS/

      Electronics Letters
    95. THEDREZ B; LOURTIOZ JM; BOUCHOULE S; KAZMIERSKI C
      EXTENDED TUNABILITY OF A SELF-SEEDED GAIN-SWITCHED INGAASP LASER USING AN INTRACAVITY ABSORBER

      Electronics Letters
    96. NARUI H; IMANISHI D
      LOW-THRESHOLD CURRENT 780NM ALGAAS BURIED HETEROSTRUCTURE LASERS ON RIDGED GAAS SUBSTRATE ALIGNED TO [01(1)OVER-BAR], FABRICATED USING SINGLE-STEP MOCVD

      Electronics Letters
    97. BESSHO Y; UETANI T; HIROYAMA R; KOMEDA K; SHONO M; IBARAKI A; YODOSHI K; NIINA T
      SELF-PULSATING 630NM BAND STRAIN-COMPENSATED MQW ALGAINP LASER-DIODES

      Electronics Letters
    98. TANIGUCHI S; HINO T; ITOH S; NAKANO K; NAKAYAMA N; ISHIBASHI A; IKEDA M
      100 H II-VI BLUE-GREEN LASER-DIODE

      Electronics Letters
    99. ACHTENHAGEN M; MILES RO; BORCHERT B; REINHART FK
      EXPERIMENTAL-OBSERVATION OF SELF-PULSATIONS IN COMPLEX-COUPLED DFB LASER-DIODES

      Electronics Letters
    100. FAIST J; CAPASSO F; SIRTORI C; SIVCO DL; HUTCHINSON AL; CHO AY
      ROOM-TEMPERATURE MIDINFRARED QUANTUM CASCADE LASERS

      Electronics Letters


ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 07/08/20 alle ore 03:59:44