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La ricerca find articoli where soggetti phrase all words 'SCATTERING TOMOGRAPHY' sort by level,fasc_key/DESCEND, pagina_ini_num/ASCEND ha restituito 36 riferimenti
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    1. Sakai, K; Ogawa, T
      Determination of tiny scatterer's shape by light scattering tomography

      OPTICAL REVIEW
    2. Neubert, M; Rudolph, P
      Growth of semi-insulating GaAs crystals in low temperature gradients by using the Vapour Pressure Controlled Czochralski Method (VCz)

      PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS
    3. Donecker, J; Naumann, M; Neubert, M
      Quantitative approaches in laser scattering tomography

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    4. Steinegger, T; Naumann, M; Jurisch, M; Donecker, J
      Precipitate engineering in GaAs studied by laser scattering tomography

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    5. Naumann, M; Rudolph, P; Neubert, M; Donecker, J
      Dislocation studies in VCz GaAs by laser scattering tomography

      JOURNAL OF CRYSTAL GROWTH
    6. Wang, SL; Gao, ZS; Fu, YJ; Sun, X; Zhang, JG; Zeng, H; Li, YP
      Scattering centers caused by adding metaphosphate into KDP crystals

      JOURNAL OF CRYSTAL GROWTH
    7. Nakayama, K; Fujimoto, H; Ishikawa, T; Takeno, H
      Silicon molar volume discrepancy: Studies of the NRLM crystal

      IEEE TRANSACTIONS ON INSTRUMENTATION AND MEASUREMENT
    8. Balogun, FA; Brunetti, A; Cesareo, R
      Volume of intersection of two cones

      RADIATION PHYSICS AND CHEMISTRY
    9. Tsuru, T; Ogawa, T
      Defects in flux and Czochralski grown beta-BaB2O4 crystals observed by light scattering tomography

      JOURNAL OF CRYSTAL GROWTH
    10. Lim, HJ; DeMattei, RC; Feigelson, RS; Rochford, K
      Striations in YIG fibers grown by the laser-heated pedestal method

      JOURNAL OF CRYSTAL GROWTH
    11. Kissinger, G; Vanhellemont, J
      Life cycle of grown-in defects in silicon as observed by IR-LST

      JOURNAL OF CRYSTAL GROWTH
    12. Naumann, M; Donecker, J; Neubert, M
      Laser scattering experiments in VCz GaAs

      JOURNAL OF CRYSTAL GROWTH
    13. Tsuru, T; Sakai, K; Ma, MY; Ogawa, T
      Measurement of stress near dislocation walls in a ZnSe signal crystal by Raman scattering tomography

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    14. Yukawa, Y; Sakai, K; Ogawa, T
      Measurement of stress distribution inside crystals by multichannel Raman scattering tomography

      SOLID-STATE ELECTRONICS
    15. Kissinger, G; Grabolla, T; Morgenstern, G; Richter, H; Graf, D; Vanhellemont, J; Lambert, U; von Ammon, W
      Grown-in oxide precipitate nuclei in Czochralski silicon substrates and their role in device processing

      JOURNAL OF THE ELECTROCHEMICAL SOCIETY
    16. Furukawa, J; Kida, M; Shimanuki, Y
      Annealing behavior of light scattering tomography defect in the denuded zone of Si wafers

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    17. VEVEFOSSATI C; MARTINUZZI S
      DETECTION AND CHARACTERIZATION OF STACKING-FAULTS BY LIGHT-BEAM INDUCED CURRENT MAPPING AND SCANNING INFRARED MICROSCOPY IN SILICON

      EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS
    18. WEYHER JL; SCHOBER T; SONNENBERG K; FRANZOSI P
      IDENTIFICATION OF INDIVIDUAL AND ALIGNED MICRODEFECTS IN BULK VERTICAL BRIDGMAN-GROWN AND LIQUID ENCAPSULATED CZOCHRALSKI-GROWN GAAS

      Materials science & engineering. B, Solid-state materials for advanced technology
    19. JURISCH M; FLADE T; HOFFMANN B; KOHLER A; KORB J; KRETZER U; REINHOLD T; WEINERT B
      SEMIINSULATING LEC GAAS SUBSTRATES WITH AN IMPROVED MACROSCOPIC AND MESOSCOPIC HOMOGENEITY

      Materials science & engineering. B, Solid-state materials for advanced technology
    20. KISSINGER G; GRAF D; LAMBERT U; RICHTER H
      METHOD FOR STUDYING THE GROWN-IN DEFECT DENSITY SPECTRA IN CZOCHRALSKI SILICON-WAFERS

      Journal of the Electrochemical Society
    21. KANG JY; OGAWA T
      MISFIT DISLOCATIONS AND STRESSES IN GAN EPILAYERS

      Applied physics letters
    22. HARADA K; FURUYA H; KIDA M
      EFFECTS OF THERMAL HISTORY ON THE FORMATION OF OXIDATION-INDUCED STACKING-FAULT NUCLEI IN CZOCHRALSKI SILICON DURING CRYSTAL-GROWTH

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    23. MA MY; OGAWA T
      OBSERVATION OF THE MORPHOLOGY AND DISPLACEMENT OF DISLOCATIONS IN VAPOR-PHASE GROWN ZNSE CRYSTALS

      Philosophical magazine. A. Physics of condensed matter. Structure, defects and mechanical properties
    24. KISSINGER G; VANHELLEMONT J; SIMOEN E; CLAEYS C; RICHTER H
      INVESTIGATION OF OXYGEN PRECIPITATION RELATED CRYSTAL DEFECTS IN PROCESSED SILICON-WAFERS BY INFRARED LIGHT-SCATTERING TOMOGRAPHY

      Materials science & engineering. B, Solid-state materials for advanced technology
    25. KOHIRO K; HIRANO R; ODA O
      STUDY ON MICROSCOPIC DEFECTS IN FE-DOPED INP SINGLE-CRYSTALS

      Journal of electronic materials
    26. CLAEYS C; SIMOEN E; VANHELLEMONT J
      PROCESS-INDUCED AND IRRADIATION-INDUCED DEFECTS IN SILICON DEVICES

      Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment
    27. BORGHESI A; PIVAC B; SASSELLA A; STELLA A
      OXYGEN PRECIPITATION IN SILICON

      Journal of applied physics
    28. MARSDEN K; SADAMITSU S; YAMAMOTO T; SHIGEMATSU T
      GENERATION OF OXIDATION-INDUCED STACKING-FAULTS IN CZOCHRALSKI-GROWN SILICON-CRYSTALS EXHIBITING A RING-LIKE DISTRIBUTED STACKING-FAULT REGION

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    29. FURUKAWA J; FURUYA H
      ANNEALING BEHAVIOR OF A LIGHT-SCATTERING TOMOGRAPHY DETECTING DEFECT NEAR-THE-SURFACE OF SI WAFERS

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    30. TREADO PJ; MORRIS MD
      INFRARED AND RAMAN-SPECTROSCOPIC IMAGING

      Applied spectroscopy reviews
    31. TAN QG; MAO HW; LIN SJ; CHEN H; LU SF; TANG DY; OGAWA T
      DEFECTS IN BETA-BAB2O4 (BBO) CRYSTALS OBSERVED BY LASER-SCANNING TOMOGRAPHY

      Journal of crystal growth
    32. KIMURA S
      OBSERVATION OF OXYGEN PRECIPITATES IN CZ-GROWN SI WAFERS WITH A PHASEDIFFERENTIAL SCANNING OPTICAL MICROSCOPE

      Journal of the Electrochemical Society
    33. OGAWA T; LU TJ; TOYODA K; NANGO N; ABE T; KUSAMA T
      OPTICAL CHARACTERIZATION OF SI WAFERS FOR ULTRALARGE-SCALE INTEGRATION

      Materials science & engineering. B, Solid-state materials for advanced technology
    34. SADAMITSU S; UMENO S; KOIKE Y; HOURAI M; SUMITA S; SHIGEMATSU T
      DEPENDENCE OF THE GROWN-IN DEFECT DISTRIBUTION ON GROWTH-RATES IN CZOCHRALSKI SILICON

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    35. FURUKAWA J; FURUYA H; SHINGYOUJI T
      DETECTION OF BULK MICRODEFECTS UNDERNEATH THE SURFACE OF SI WAFER USING INFRARED LIGHT-SCATTERING TOMOGRAPHY

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    36. UMENO S; SADAMITSU S; MURAKAMI H; HOURAI M; SUMITA S; SHIGEMATSU T
      AXIAL MICROSCOPIC DISTRIBUTION OF GROWN-IN DEFECTS IN CZOCHRALSKI-GROWN SILICON-CRYSTALS

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS


ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 11/08/20 alle ore 06:16:58